MCC
Features
omponents 21201 Itasca Street Chatsworth !"# $
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S1Q THRU S1ZZ
1 Amp Silicon Rectifier 1200 to 2000 Volts
DO-214AA (SMBJ) (Round Lead)
H Cathode Band
• • • • • • • • •
For Surface Mount Applications Extremely Low Thermal Resistance High Temp Soldering: 250°C for 10 Seconds At Terminals Easy Pick And Place Gull Wing Lead Bend To Prevent Arcing Perfect For Ballast, Television And Monitor Applications
Maximum Ratings
MCC Part Number S1Q S1V S1Y S1Z S1ZZ
Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C Maximum Thermal Resistance; 15°C/W Junction To Lead Device Marking S1Q S1V S1Y S1Z S1ZZ Maximum Recurrent Peak Reverse Voltage 1200V 1400V 1600V 1800V 2000V IF(AV) IFSM 1.0A 30A Maximum RMS Voltage 840V 980V 1120V 1260V 1400V Maximum DC Blocking Voltage 1200V 1400V 1600V 1800V 2000V
J
A
C
E F G
D
lectrical Characteristics @ 25° C Unless Otherwise Specified
Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage TJ = 75°C 8.3ms, half sine
DIM A B C D E F G H J
B
DIMENSIONS INCHES MIN .078 .075 .002 ----.035 .065 .205 .160 .130 MM MIN 1.98 1.90 .05 ----.90 1.65 5.21 4.06 3.30
VF Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time
1.10V 10.0µA 30µA
IFM = 1.0A; TJ = 25°C* TJ = 25°C TJ = 125°C
MAX .116 .089 .008 .02 .055 .091 .224 .180 .155
MAX 2.95 2.25 .20 .51 1.40 2.32 5.69 4.57 3.94
NOTE
IR
SUGGESTED SOLDER PAD LAYOUT
0.090"
IF=0.5A, IR=1.0A, Irr=0.25A Typical Junction CJ 15pF Measured at Capacitance 1.0MHz, VR=4.0V *Pulse test: Pulse width 300 µsec, Duty cycle 2% Trr 1.8u s
0.085”
0.070”
www.mccsemi.com
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