MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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SI2301
Features
• • • • • • •
-20V,-2.8A, RDS(ON)=120mΩ@VGS=-4.5V RDS(ON)=150mΩ@VGS=-2.5V High dense cell design for extremely low RDS(ON) Rugged and reliable High Speed Switching SOT-23 Package Marking Code: S1 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance Junction to Ambientb Operating Junction Temperature Storage Temperature Rating -20 -2.8 -10 ±8 1.25 100 -55 to +150 -55 to +150 Unit V A A V W ℃/W ℃ ℃
P-Channel Enhancement Mode Field Effect Transistor
SOT-23
A D
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol VDS ID IDM VGS PD RθJA TJ TSTG
3
1.GATE
C B
2. SOURCE 3. DRAIN
1
F E
2
G K
H
J
DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37
Internal Block Diagram
D
DIM A B C D E F G H J K
MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020
MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51
NOTE
G
Suggested Solder Pad Layout
.031 .800 .035 .900 .079 2.000 inches mm
S
.037 .950 .037 .950
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MCC
TM
Micro Commercial Components
SI2301
TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -0.75A VDS = -6V, ID = -2.8A, VGS = -4.5V VDD = -6V, ID = -1A, VGS = -4.5V, RGEN = 6Ω Test Condition VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VGS = 8V, VDS = 0V VGS = -8V, VDS = 0V VGS = VDS, ID = -250µA VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A VDS = -5V, ID = -2.8A -0.45 80 110 8 880 270 175 11 5 32 23 11 1.5 2.1 -0.75 -1.2 20 10 65 45 14.5 120 150 Min -20 -1 100 -100 Typ Max Units V
µA
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c
d
nA nA V mΩ mΩ S pF pF pF ns ns ns ns nC nC nC A V
VDS = -6V, VGS = 0V, f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
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MCC
TM
Micro Commercial Components
SI2301
10 25 C
10 -VGS=4.5,4,3,V
-ID, Drain Current (A)
8 -VGS=2.5V 6
-ID, Drain Current (A)
8
6
4
-VGS=2.0V
4
2 0 0 1 2 3
-VGS=1.5V
2 TJ=125 C 0 -55 C 1.5 2.0 2.5 3.0
4
5
0.0
0.5
1.0
-VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
1200 1000 800 600 400 200 0 0 2 4 6 8 10 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
-VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
C, Capacitance (pF)
Ciss
Coss Crss
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=-2.8A VGS=-4.5V
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A)
VGS=0V
1
VTH, Normalized Gate-Source Threshold Voltage
VDS=VGS ID=-250µA
10
10
0
10 -25 0 25 50 75 100 125 150
-1
0.2
0.4
0.6
0.8
1.0
1.2
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
-VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
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MCC
TM
Micro Commercial Components
SI2301
10
2
-VGS, Gate to Source Voltage (V)
5 V =-6V DS ID=-2.8A 4
-ID, Drain Current (A)
10
1
RDS(ON)Limit 1ms 10ms 100ms 1s DC
3
10
0
2
10
-1
1
0 0 3 6 9 12
10
-2
TA=25 C TJ=150 C Single Pulse
-1
10
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
-VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective Transient Thermal Impedance
D=0.5 0.2
10
-1
0.1 0.05 0.02 0.01 PDM t1 t2 1. R JA (t)=r (t) * R JA 2. R JA=See Datasheet 3. TJM-TA = P* R JA (t) 4. Duty Cycle, D=t1/t2
10
-2
Single Pulse
-3
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
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Micro Commercial Components
TM
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