SI2302

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2302 Features • • • • • • • 20V,3.0A, RDS(ON)=55m¡@VGS=4.5V RDS(ON)=82m¡@VGS=2.5V High dense cell design for extremely low RDS(ON) Rugged and reliable Lead free product is acquired SOT-23 Package Marking Code: S2 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance Junction to Ambientb Operating Junction Temperature Storage Temperature Rating 20 3 10 f8 1.25 100 -55 to +150 -55 to +150 Unit V A A V W /W N-Channel Enhancement Mode Field Effect Transistor SOT-23 A D Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS PD R©JA TJ TSTG 3 1.GATE C B 2. SOURCE 3. DRAIN 1 F E 2 G K H J DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 Internal Block Diagram D DIM A B C D E F G H J K MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout G .035 .900 .031 .800 S .079 2.000 inches mm .037 .950 .037 .950 www.mccsemi.com Revision: 1 1 of 5 2008/01/01 MCC TM Micro Commercial Components SI2302 TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 0.94A VDS = 10V, ID = 3.6A, VGS = 4.5V VDD = 10V, ID = 3.6A, VGS = 4.5V, RGEN = 6Ω Test Condition VGS = 0V, ID = 10µA VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VGS = -8V, VDS = 0V VGS = VDS, ID = 50µA VGS = 4.5V, ID = 3.6A VGS = 2.5V, ID = 3.1A VDS = 5V, ID = 3.6A 0.65 55 82 8.5 237 120 45 23 11 34 36 6 1.4 1.8 0.94 1.2 45 30 70 70 10 Min 20 1 100 -100 1.2 72 110 Typ Max Units V µA Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Static Drain-Source On-Resistance Forwand Transconductance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c c nA nA V mΩ mΩ S pF pF pF ns ns ns ns nC nC nC A V Gate Threshold Voltage VDS = 10V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. www.mccsemi.com Revision: 1 2 of 5 2008/01/01 MCC TM Micro Commercial Components SI2302 10 25 C 10 VGS=4.5,3.5,2.5V ID, Drain Current (A) 6 ID, Drain Current (A) 8 8 6 VGS=2.0V 4 4 2 0 0 1 2 3 VGS=1.5V 2 TJ=125 C 0 -55 C 2 3 4 5 0 1 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 600 500 400 300 Ciss 200 Coss 100 0 0 5 10 15 20 25 Crss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=3.6A VGS=4.5V C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 1 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=250µA IS, Source-drain current (A) 25 50 75 100 125 150 10 10 0 10 -25 0 -1 0.2 0.4 0.6 0.8 1.0 1.2 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current www.mccsemi.com Revision: 1 3 of 5 2008/01/01 MCC TM Micro Commercial Components SI2302 ID, Drain Current (A) 10 1 VGS, Gate to Source Voltage (V) 5 V =10V DS ID=3.6A 4 RDS(ON)Limit 1ms 10ms 100ms 1s DC 3 10 0 2 10 -1 1 0 0 2 4 6 10 -2 TA=25 C TJ=150 C Single Pulse 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 Single Pulse -4 PDM t1 t2 1. R JA (t)=r (t) * R JA 2. R JA=See Datasheet 3. TJM-TA = P* R JA (t) 4. Duty Cycle, D=t1/t2 10 -2 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve www.mccsemi.com Revision: 1 4 of 5 2008/01/01 MCC Micro Commercial Components TM Ordering Information Device (Part Number)-TP Packing Tape&Reel;3Kpcs/Reel ***IMPORTANT NOTICE*** Micro Commercial Components Corp . reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages. ***APPLICATIONS DISCLAIMER*** Products offer by Micro Commercial Components Corp . are not intended for use in Medical, Aerospace or Military Applications. www.mccsemi.com Revision: 1 5 of 5 2008/01/01