SI2333-TP

SI2333 Features • • • • • • TrenchFET Power Mosfet Excellent RDS(ON) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) P-Channel MOSFET Maximum Ratings • Operating Junction Temperature Range : -55oC to +150oC • Storage Temperature Range: -55oC to +150oC o • Thermal Resistance: 113 C/W Junction to Ambient • Thermal Resistance: 357oC/W Junction to Ambient(Note 2) Parameter SOT-23 (Note 1) A D Symbol Rating Unit Drain -source Voltage VDS -12 V Gate -Source Voltage VGS ±8 V Drain Current-Continuous(Note 1) ID -6.0 A Drain Current-Pulse IDM -20 A Total Power Dissipation PD 0.35(Note 2) 1.10(Note 1) D 1. *$7E 2. 6285&( 3. '5$,1 S C 1 F 2 E H G W B J L K DIMENSIONS INCHES MM DIM MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 0.034 0.041 0.85 1.05 D E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 G 0.0004 0.006 0.01 0.15 H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.007 0.020 0.20 0.50 Internal Structure G 3 Marking:S33 NOTE Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 2.000 inches mm 0.037 0.950 0.037 0.950 Rev.3-1-01012019 1/4 MCCSEMI.COM SI2333 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=-250µA -12 Gate-Threshold Voltage(Note 3) VGS(th) VDS=VGS, ID=-250µA -0.40 Gate-Body Leakage Current IGSS Zero Gate Voltage Drain Current IDSS Drain-Source Breakdown Voltage Drain-Source On-Resistance(Note 3) Forward Tranconductance(Note 3) RDS(on) gFS V -1.0 V VGS = ± 8V, VDS =0V ±0.1 µA VDS =-12V, VGS =0V -1 µA VGS=-4.5V, ID=-5.0A 28 VGS=-3.7V, ID=-4.6A 32 VGS=-2.5V, ID=-4.3A 40 VGS=-1.8V, ID=-1.0A 63 VGS=-1.5V, ID=-0.5A 150 VDS=-5V, ID=-5.0A mΩ S 18 Dynamic Characteristics(Note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge Qg Gate-Source Chage Qgs Gage-Drain Charge Qgd 3.6 Turn-On Delay Time td(on)   VDD=-6V,VGEN=-4.5V,ID=-4A   RL=6Ω,RGEN=1Ω   2  Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time tr td(off) 1275 VDS=-6V,VGS=0V, f=1MHz pF 255 236 = f 1MHz 19 1.9 14 VDS=-6V,VGS=-4.5V,ID=-5A tf Ω 21 2.3 QF ns Source-Drain Diode Characteristics Diode Forward Current IS Diode Pulsed Forward Current ISM Diode Forward Voltage(Note 3) VSD Diode 5HYHUVH5HFRYHU\7LPH(Note ) WUU Diode 5HYHUVH5HFRYHU\&KDUJH(Note ) 4UU TC=25℃ VGS=0V, IS=-4A ,)=$,G,GW $ȝV -1.4 A -20 A -1.2 V   QV   QF Note: 1. Device Mounted On FR-4 Substrated Board, With Minimum Recommended Pad Layout, Single Side. 2. Device Mounted on No Heat Sink. 3. Pulse Test: Pulse Width≤ 300μs,Duty Cycle≤2%. 4. Guaranteed by Design, Not Subject to Production Testing. Rev.3-1-01012019 2/4 MCCSEMI.COM SI2333 Curve Characteristics Fig. 2 - Transfer Characteristics Fig. 1 - Output Characteristics -20 -20 VDS= -3V Pulesd TA=25°C Pulsed -16 VGS=-5V,-4V,3V,2.5V,2V -12 Drain Current (A) Drain Current (A) -16 VGS=-1.5V -8 TA=25°C -8 -4 -4 -0 TA=100°C -12 -0 -1 -2 -3 -4 -0 -0.0 -5 -0.5 Drain To Source Voltage (V) Drain-Source On-Resistance (mΩ) Drain-Source On-Resistance (mΩ) -2.5 -3.0 Pulsed VGS=-1.5V 40 VGS=-1.8V VGS=-2.5V 30 20 VGS=-3.7V,-4.5V 80 60 -3 -4 -5 -6 -7 -8 ID=-5A 40 TA=100°C 20 0 -2 -1 -2.0 100 TA=25°C Pulsed 50 10 -1.5 Fig. 4 - RDS(ON)—VGS Fig. 3 - RDS(ON)—ID 70 60 -1.0 Gate To Source Voltage (V) TA=25°C -0 -1 -2 -3 -4 -5 -6 Gate To Source Voltage (V) Drain Current (A) Fig. 5 - IS—VSD Fig. 6 - Threshold Voltage -10 -1.0 Threshold Voltage (V) Source Current (A) -0.8 -1 -0.1 TA=100°C TA=25°C -0.6 ID= -250μA -0.4 -0.2 -0.01 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 50 75 100 125 Junction Temperature (°C) Source To Drain Voltage (V) Rev.3-1-01012019 -0.0 25 3/4 MCCSEMI.COM SI2333 Ordering Information Device Packing Part Number-TP Tape&Reel:3Kpcs/Reel Note : Adding "-HF" Suffix For Halogen Free, eg. Part Number-TP-HF ***IMPORTANT NOTICE*** Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages. ***LIFE SUPPORT*** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Micro Commercial Components Corporation. ***CUSTOMER AWARENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev.3-1-01012019 4/4 MCCSEMI.COM