SIC10120PTA-BP

SIC10120PTA Features • Zero Reverse Recovery Current • Positive Temperature Coefficient • High-Speed Switching • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Halogen Free Available Upon Request By Adding Suffix "-HF" • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) 10 Amp Silicon Carbide Schottky Barrier Rectifier 1200 Volts Benefits • Temperature-Independent Performance • Essentially No Switching Loss • Higher Efficiency • Reduced EMI • Reduction of Heat Sink Requirements TO-247AD Applications • Switching Power Supply • Power Factor Correction • Solar Inverter SIC10120PTA SIC10120PTA Peak Repetitive Reverse Voltage VRRM 1200V Surge Peak Reverse Voltage VRSM 1200V DC Reverse Voltage VDC 1200V IF 10A TJ=155°C Average Forward Current S R P G I J F Device Marking H Q 1 DIM Peak Forward Surge Current IFSM 105A TC=25°C, tp=10ms, Half Sine Pulse Repetitive Peak Forward Current IFRM 35A TC=25°C, tp=10ms, Half Sine Pulse Power Dissipation PD 140W TC=25°C Note :1. High Temperature Solder Exemption Applied, see EU Directive Annex 7a. Internal Structure Rev.3-2-12012020 T B MCC Part Number PIN 2 U O D Operating Junction Temperature Range: -55°C to +175°C Storage Temperature Range: -55°C to +175°C Thermal Resistance: 1.65°C/W Junction to Case PIN 1 E C Maximum Ratings • • • K A A B C D E F G H I J K O P Q R S T U 2 INCHES MIN MAX 0.602 0.642 0.799 0.839 0.189 0.205 0.242 0.091 0.106 0.772 0.796 ----- 0.169 0.428 0.075 0.087 0.044 0.054 0.189 0.205 0.073 0.085 0.087 0.103 0.020 0.030 0.512 0.535 0.640 0.663 0.134 0.150 ----- 0.287 MM MIN MAX 15.30 16.30 20.30 21.30 4.80 5.20 6.15 2.30 2.70 19.62 20.22 ----- 4.30 10.88 1.91 2.21 1.11 1.36 4.80 5.20 1.85 2.15 2.21 2.61 0.51 0.75 13.00 13.60 16.25 16.85 3.40 3.80 ----- 7.30 NOTE TYP. TYP. Φ Φ CASE 1/4 MCCSEMI.COM SIC10120PTA Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Forward Voltage VF Reverse Leakage Current IR Total Capacitive Charge QC Conditions Typ. Max. Units IF=10A, Tj=25°C 1.5 1.8 V IF=10A, Tj=175°C 2.2 3.0 V VR=1200V, Tj=25°C 2 80 μA VR=1200V, Tj=175°C 35 μA VR=800V, Tj=25°C =2 60 nC 750 pF VR=400V, Tj=25°C , f=1MHz 55 pF VR=800V, Tj=25°C , f=1MHz 45 pF VR=800V 16 μJ VR=0V, Tj=25°C , f=1MHz Total capacitance C EC Capacitance Stored Energy Curve Characteristics(Per leg) Fig. 1 - Typical Instantaneous Forward Characteristics Fig. 2 - Typical Reverse Leakage Characteristics 20 1000 18 Tj=25°C Tj=75°C Tj=125°C Tj=175°C 16 14 100 10 IR(μA) IF (A) 12 10 Tj=25°C Tj=75°C Tj=125°C Tj=175°C 1 8 0.1 6 4 0.01 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF (V) Rev.3-2-12012020 1E-3 200 400 600 800 1000 1200 VR (V) 2/4 MCCSEMI.COM SIC10120PTA Curve Characteristics Fig. 3 - Capacitance vs Reverse Voltage Fig. 4 - Capacitive Charge vs Reverse Voltage 800 70 700 60 600 50 QC (nC) C (pF) 500 400 40 30 300 20 200 10 100 0 0.1 1 10 100 0 1000 0 100 200 300 400 500 600 700 800 900 1000 VR (V) VR (V) Fig. 6 - Power Derating Fig. 5 - Capacitance Stored Energy 160 25 140 120 100 15 PD (W) EC (μJ) 20 10 80 60 40 5 20 0 0 200 400 600 800 0 25 1000 50 75 100 125 150 175 0.1 1 TC (°C) VR (V) Fig. 7 - Current Derating Fig. 8 - Transient Thermal Impedance 120 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC IF(peak) (A) 80 1 0.5 Thermal Resistance (C/°W) 100 60 40 0.3 0.1 0.1 0.05 0.02 0.01 0.01 20 0 25 Single Pluse 50 75 100 125 150 175 TC (°C) Rev.3-2-12012020 1E-3 1E-6 1E-5 1E-4 1E-3 ) 0.01 T(sec) 3/4 MCCSEMI.COM SIC10120PTA Ordering Information Device Packing Part Number-BP Tube:30pcs/Tube, 360pcs/Box,1.8K/Ctn; Note : Adding "-HF" Suffix For Halogen Free, eg. 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