SIC20120PTA-BP

SIC20120PTA Features • Zero Reverse Recovery Current • Positive Temperature Coefficient • High-Speed Switching • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Halogen Free Available Upon Request By Adding Suffix "-HF" • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Benefits • Temperature-Independent Performance • Essentially No Switching Loss • Higher Efficiency • Reduced EMI • Reduction of Heat Sink Requirements 20 Amp Silicon Carbide Schottky Barrier Rectifier 1200 Volts TO-247 Applications • Switching Power Supply • Power Factor Correction • Solar Inverter A Maximum Ratings • • • PIN Operating Junction Temperature Range: -55°C to +175°C Storage Temperature Range: -55°C to +175°C Thermal Resistance: 1.65°C/W Junction to Case MCC Part Number Device Marking SIC20120PTA SIC20120PTA 2 1 3 Q P F K V J D Peak Repetitive Reverse Voltage VRRM 1200V Surge Peak Reverse Voltage VRSM 1200V DC Reverse Voltage VDC 1200V Average Forward Current C E B IF G DIM 10A* / 20A** TJ=155°C Peak Forward Surge Current IFSM 90A* / 180A** TC=25°C, tp=10ms, Half Sine Pulse Repetitive Peak Forward Current IFRM 35A* / 70A** TC=25°C, tp=10ms, Half Sine Pulse Power Dissipation PD 120W* / 240W** TC=25°C Note :1. High Temperature Solder Exemption Applied, see EU Directive Annex 7a. A B C D E F J K P Q V G DIMENSIONS INCHES MM MIN MAX MIN MAX 0.787 0.866 20.00 22.00 0.598 0.638 15.20 16.20 0.185 0.208 4.70 5.30 0.035 0.059 0.90 1.50 0.059 0.094 1.50 2.40 0.067 0.091 1.70 2.30 0.019 0.031 0.48 0.80 0.748 0.833 19.00 21.15 0.122 0.189 3.10 4.80 0.118 0.150 3.00 3.80 0.106 0.134 2.70 3.40 0.197 0.224 5.00 5.70 NOTE Φ 2.*Per leg, ** Per Device Internal Structure PIN 1 PIN 3 Rev.3-2-12012020 PIN 2 CASE 1/4 MCCSEMI.COM SIC20120PTA Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Forward Voltage VF Reverse Leakage Current IR Total Capacitive Charge QC Conditions Typ. Max. Units IF=10A, Tj=25°C 1.5 1.8 V IF=10A, Tj=175°C 2.2 3.0 V VR=1200V, Tj=25°C 2 80 μA VR=1200V, Tj=175°C 35 μA VR=800V, Tj=25°C =2 60 nC 750 pF VR=400V, Tj=25°C , f=1MHz 55 pF VR=800V, Tj=25°C , f=1MHz 45 pF VR=800V 16 μJ VR=0V, Tj=25°C , f=1MHz Total capacitance C EC Capacitance Stored Energy Curve Characteristics(Per leg) Fig. 1 - Typical Instantaneous Forward Characteristics Fig. 2 - Typical Reverse Leakage Characteristics 20 1000 18 Tj=25°C Tj=75°C Tj=125°C Tj=175°C 16 14 100 10 IR(μA) IF (A) 12 10 Tj=25°C Tj=75°C Tj=125°C Tj=175°C 1 8 0.1 6 4 0.01 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF (V) Rev.3-2-12012020 1E-3 200 400 600 800 1000 1200 VR (V) 2/4 MCCSEMI.COM SIC20120PTA Curve Characteristics Fig. 3 - Capacitance vs Reverse Voltage Fig. 4 - Capacitive Charge vs Reverse Voltage 800 70 700 60 600 50 QC (nC) C (pF) 500 400 40 30 300 20 200 10 100 0 0.1 1 10 100 0 1000 0 100 200 300 400 500 600 700 800 900 1000 VR (V) VR (V) Fig. 6 - Power Derating Fig. 5 - Capacitance Stored Energy 160 25 140 120 100 15 PD (W) EC (μJ) 20 10 80 60 40 5 20 0 0 200 400 600 800 0 25 1000 50 75 100 125 150 175 0.1 1 TC (°C) VR (V) Fig. 7 - Current Derating Fig. 8 - Transient Thermal Impedance 120 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC IF(peak) (A) 80 1 0.5 Thermal Resistance (C/°W) 100 60 40 0.3 0.1 0.1 0.05 0.02 0.01 0.01 20 0 25 Single Pluse 50 75 100 125 150 175 TC (°C) Rev.3-2-12012020 1E-3 1E-6 1E-5 1E-4 1E-3 ) 0.01 T(sec) 3/4 MCCSEMI.COM SIC20120PTA Ordering Information Device Packing Part Number-BP Tube:30pcs/Tube, 360pcs/Box,1.8K/Ctn; Note : Adding "-HF" Suffix For Halogen Free, eg. 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