SICW080N120Y4-BP

SICW080N120Y4 Features • • • • • • SiC MOSFET technology High blocking voltage with low on-resistance High-speed switching with low capacitances Halogen Free. “Green” Device (Note 1) Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +175°C • Storage Temperature Range: -55°C to +175°C • Thermal Resistance: 0.67°C/W Junction to Case TO-247-4 Applications • Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC Converters • Battery Chargers • Motor Drives Parameter Symbol Rating Unit Drain-Source Voltage VDS 1200 V Gate-Source Voltage VGSmax -8/+22 V Gate-Source Voltage VGSop -4/+18 V ID 39 A IDM 80 A DIM Total Power Dissipation,Tc=25oC PD 223 W Total Power Dissipation,Tc=110oC PD 97 W A A1 A2 b b1 b2 c D D1 E E1 E2 e L L1 P Q S Continuous Drain Current Pulsed Drain Current (1) Note: 1. Pulse Test: Pulse Width≤10µs,Duty Cycle ≤1%. Internal Structure Drain (Pin 1) MCC SICW 080N120Y4 YYWW Gate (Pin 4) Driver Source (Pin 3) 1 2 3 4 DIMENSIONS INCHES MM NOTE MIN MAX MIN MAX 0.190 0.205 4.80 5.20 0.090 0.100 2.29 2.50 0.075 0.08 1.88 2.08 0.042 0.052 1.10 1.30 0.09 0.1 2.35 2.75 0.094 0.112 2.39 2.84 0.022 0.027 0.55 0.68 0.917 0.929 23.30 23.60 0.640 0.6 16.25 1 0.620 0.63 15.75 16. 0.5 0.55 13.0 14. 0.1 0.201  5.10 0.100 2.54 0.68 0. 17.3 17. 0.15 0.1  4.3 0.138 0.144 3.51 3.65 Φ 0.2 0.236 5. 6.00 0.238 0.248 6.04 6.30 Power Source (Pin 2) 1 Rev.3-1-10092022 2 4 3 1/7 MCCSEMI.COM SICW080N120Y4 Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=100uA Gate-Source Leakage Current IGSS VDS=0V, VGS =18V Zero Gate Voltage Drain Current IDSS VDS=1200V, VGS=0V Drain-Source Breakdown Voltage Gate-Threshold Voltage VGS(th) Drain-Source On-Resistance RDS(on) Internal Gate Resistance Rg Transconductance gFS VDS=VGS, ID=5mA 1200 2.3 V 100 nA 1 10 µA 2.9 3.6 V VDS=VGS, ID=5mA, Tj =175oC 2.2 VGS=18V, ID=20A 77 V 85 mΩ VGS=18V, ID=20A,Tj =175oC 122 mΩ f=1MHz 3.1 Ω VDS=16V, ID=20A 10 VGS=16V, ID=20A,Tj =175oC 9.2 S Diode Characteristics Continuous Body Diode Current IS Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm 39 A VGS=-4V, IS=10A 3.9 V VDS=0V, ISD=10A, Tj =175oC 3.2 V 28.24 ns 190 nC 30.08 A VGS=-4V, ISD=20A, dIF/dt=2095A/μs Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Coss Stored Energy Eoss 890 VDS=1000V,VGS=0V,f=1MHz 58 4 34 Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 11 Turn-On Delay Time td(on) 21 Turn-On Rise Time tr 17 Turn-Off Delay Time td(off) Turn-Off Fall Time tf VDS=800V,VGS=-4/+18V ID=20A VDS=800V, VGS=-4/+15V, RG=0Ω, IDS=20A 12 14 nC ns 8 Eon 377 Turn-Off switching energy Eoff 14 2/7 uJ 41 Turn-On switching energy Rev.3-1-10092022 pF uJ MCCSEMI.COM SICW080N120Y4 Curve Characteristics Fig. 1 - Typical Output Characteristics 80 Fig. 2 - Typical Output Characteristics 60 Tj = 25oC ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) Tj= -40oC VGS = 18V 60 VGS = 15V VGS = 13V 40 VGS = 11V 20 VGS = 9V 0 2 4 6 8 VGS = 15V 30 VGS = 11V 20 VGS = 9V 10 VGS = 7V 0 10 0 ID, Drain Source Current (A) ID, Drain-to-Source Current (A) VGS = 11V VGS = 13V VGS = 15V VGS = 9V VGS = 18V 20 VGS = 7V 10 0 4 2 6 8 40 30 20 10 0 10 Tj = -40 ℃ Tj = 25 ℃ Tj = 175 ℃ 0 2 4 6 8 12 10 14 VGS, Gate-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 600 10 Fig. 4 - Transfer Characteristics for various junction temperature 50 0 8 50 Tj = 175oC 30 6 VDS, Drain-to-Source Voltage (V) Fig. 3 - Typical Output Characteristics 40 4 2 VDS, Drain-to-Source Voltage (V) 60 VGS = 13V 40 VGS = 7V 0 VGS = 18V 50 Fig. 5 - On-resistance vs.temperature for various gate voltage Fig. 6 - Normalized on-resistance vs.temperature 2.0 1.8 RDS ON, On Resistance (P.U.) RDS ON, On Resistance (mΩ) 500 400 VGS=11V 300 200 VGS=13V 100 VGS=18V 0 -50 -25 25 50 75 100 125 150 1.2 1.0 0.8 0.6 0.4 0.0 -50 175 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature (℃) Tj, Junction temperature (℃) Rev.3-1-10092022 1.4 0.2 VGS=15V 0 1.6 3/7 MCCSEMI.COM SICW080N120Y4 Curve Characteristics Fig. 7 - On-resistance vs. drain current 180 o VGS=18V IDS, Source Drain Current (A) RDS ON, On Resistance (mΩ) Tj=175 ℃ 140 120 100 Tj=25 ℃ 80 40 Tj=-40 ℃ 0 30 40 50 -40 -50 -60 -9 -8 Tj = -40℃ Tj = 25℃ Tj = 175℃ -50 -60 -70 -4 -3 -2 -1 0 -20 -30 VGS=0V -40 VGS=5V -50 VGS=15V VGS=10V VGS=18V -60 -70 -9 -8 -7 -6 -5 -4 -3 -2 -1 -80 -10 0 -9 -8 VDS, Drain Source Voltage (V) -7 -6 -5 -4 -3 -2 -1 0 35 40 45 VDS, Drain to Source Voltage (V) Fig. 11 - Threshold voltage vs.temperature 4.0 Fig. 12 - Gate charge characteristic 18 VGS=VDS ID =5mA VDS=800V ID =20A 16 VGS, Gate to Source Voltage (V) 3.5 VGS(th), Threshold Voltage(V) -5 -10 -40 3.0 2.5 2.0 1.5 14 12 10 8 6 4 2 0 -25 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 Qg, Gate charge (nC) Tj, Junction Temperature(℃) Rev.3-1-10092022 -6 0 VGS=0V -30 1.0 -50 -7 Fig. 10 - 3rd quadrant characteristic at Tj=25oC Fig. 9 - Body diode characteristic IDS, Drain to Source Current (A) IDS, Drain Source Current (A) VGS=0V -30 VDS, Source Drain Voltage (V) -20 -80 -10 VGS=-2V -20 -80 -10 60 IDS, Drain to source Current (A) -10 VGS=-4V -70 20 10 0 Tj=25 C -10 160 60 Fig. 8 - Body diode characteristic 0 4/7 MCCSEMI.COM SICW080N120Y4 Curve Characteristics Fig. 1 - &DSDFLWDQFHVYVGUDLQVRXUFHYROWDJH9  10000 Fig. 1 - &DSDFLWDQFHVYVGUDLQVRXUFHYROWDJH9  10000 o o Tj=25 C, f=1MHz Tj=25 C, f=1MHz Ciss 100 Coss 10 Crss 1 0 200 400 Coss 100 Crss 10 600 800 1 1000 VDS, Drain-to-source Voltage (V) 0 50 100 150 200 VDS, Drain-to-source Voltage (V)  Fig. 1 - 2XWSXWFDSDFLWRUVWRUHGHQHUJ\ 40 Ciss 1000 C, capacitance (pF) C, capacitance (pF) 1000 Fig. 1 - 5HYHUVHFKDUDFWHULVWLFVYV7M  50 40 25 20 15 10 30  IDSS, Reverse Current(uA) 30  EOSS, Stored Energy (uJ) 35 20 Tj = -55 ℃ Tj = 25 ℃ Tj = 75 ℃ 10 Tj = 125 ℃ 5 0 Tj = 175 ℃ 0 200 400 600 800 0 1000 0 200 400 VDS, Drain to Source Voltage (V) Fig. 1 - Maximum power dissipation derating vs. temperature 50 Rev.3-1-10092022 150 100 50 -25 0 25 50 75 100 TC, Case temperature (℃) 125 800 1000 1200 1400 1600 1800 150 40 30 20 10 0 175 Fig. 1 - Coutinuous drain current derating vs.  temperature  ID, Drain Continuous Current (A) 200  PToT, Powder dissipation (W) 250 0 -50 600 VDS, Drain to Source Voltage(V)      TC, Case temperature (℃) 5/7 MCCSEMI.COM SICW080N120Y4 Curve Characteristics    0.01 0.6 Etotal  Switching Loss (mJ)   0.1 o Tj=25 C VDD=600V VGS=-4/15V ID=20A 0.8  0.4 Eon 0.2 6LQJOHSXOVH 1E-6 1E-5 1E-4 1E-3 0.01 Time, tp (S) 0.1 0.0 1 Fig. 21 - Clamped inductive  switching energy vs. Rg 0.8 10 20 25 30 35 o Tj=25 C VDD=800V VGS=-4/15V ID=20A Tj=25 C VDD=800V VGS=-4/15V ID=20A 35 Etotal 0.5 Eon  0.4 0.3 0.2 30 td(on) 25  0.6 15 Fig. 22 - Switching times vs. Rg 40 o 0.7 tr 20 td(off) 15 tf 10 0.1 0.0 Eoff 5 ID, Drain to Source Current (A) Switching time (ns) Thermal Resistance (℃/W) 1.0  Switching Loss (mJ) Fig. 20 - Clamped Inductive switching energy vs. drain current Fig. 19 - Transient thermal impedance 1 Eoff 0 4 2 6 8 5 10 Rg, Gate Resistance (ohm) 0 2 4 6 8 10 Rg, Gate Resistance (ohm) Fig. 23 - Drain to Source Voltage (V)  100 10 Limit by RDSON 100us  ID, Drain Current (A) 10us 1 PV o TC=25 C D=0 Parameter: tp 0.1 1 PV DC 10 100 1000 10000 VDS, Drain to Source Voltage (V) Rev.3-1-10092022 6/7 MCCSEMI.COM SICW080N120Y4 Ordering Information Device Packing SICW080N120Y4-BP Tube:30pcs/Tube, 360pcs/Box,1.8K/Ctn; ***IMPORTANT NOTICE*** Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages. 0LFUR&RPPHUFLDO&RPSRQHQWV&RUS. products are sold subject to the general terms and conditions of commercial sale, as published at KWWSVZZZPFFVHPLFRP+RPH7HUPV$QG&RQGLWLRQV ***LIFE SUPPORT*** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Micro Commercial Components Corporation. ***CUSTOMER AWARENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. 0&& ZLOO QRW SURYLGH DQ\ ZDUUDQW\ FRYHUDJH RU RWKHU DVVLVWDQFH IRU SDUWV ERXJKW IURP 8QDXWKRUL]HG 6RXUFHV. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev.3-1-10092022 7/7 MCCSEMI.COM