TIP122L-BP

TIP122L Features • Medium Power Complementary Silicon Transistors • Halogen Free Available Upon Request By Adding Suffix "-HF" • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25°C Unless Otherwise Specified • Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 1.92℃/W Junction to Case • Thermal Resistance: 62.5℃/W Junction to Ambient Parameter Collector-Base Voltage NPN Plastic-Encapsulate Transistors TO-220 Symbol Rating Unit VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 5 A Power Dissipation @ TC=25°C PD 65 W Power Dissipation @ TA=25°C PD 2 B S Q A T U 1 2 3 H W Note: 1.High Temperature Solder Exemption Applied, see EU Directive Annex 7. C F K D G N J R V L 1.BASE 2.COLLECTOR 3.EMITTER DIM A B C D F G H J K L N Q R S T U V Rev.3-2-12012020 1/4 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.560 0.625 14.22 15.88 0.380 0.420 9.65 10.67 0.140 0.190 3.56 4.82 0.020 0.045 0.51 1.14 0.139 0.161 3.53 4.09 0.090 0.110 2.29 2.79 ----- 0.250 ----- 6.35 0.012 0.025 0.30 0.64 0.500 0.580 12.70 14.73 0.045 0.060 1.14 1.52 0.190 0.210 4.83 5.33 0.100 0.135 2.54 3.43 0.080 0.115 2.04 2.92 0.045 0.055 1.14 1.39 0.230 0.270 5.84 6.86 ----- 0.050 ----- 1.27 0.045 ----- 1.15 ----- NOTE Φ MCCSEMI.COM TIP122L Electrical Characteristics @ TA=25°C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V(BR)CBO 100 V IC=1mA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 100 V IC=30mA, IB=0 Collector Cutoff Current ICBO 0.2 mA VCB=100V, IE=0 Collector Cutoff Current ICEO 0.5 mA VCE=50V, IB=0 Emitter Cutoff Current IEBO 2.0 mA VEB=5V, IC=0 DC Current Gain Collector-Emitter Saturation Voltage hFE(1) 1000 VCE=3V, IC=0.5A hFE(2) 1000 VCE=3V, IC=3A VCE(sat) 2.0 V IC=3A, IB=12mA 4.0 V IC=5A, IB=20mA Base-Emitter On Voltage VBE 2.5 V VCE=3V, IC=3A Collector Output Capacitance Cob 200 pF VCB=-10V, IE=0,f=1MHz Rev.3-2-12012020 2/4 MCCSEMI.COM TIP122L Curve Characteristics Fig. 1 - Static Characteristics 6 Common Emitter TA=25°C 5 Fig. 2 - DC Current Gain Characteristics 100000 1.0mA 0.9mA 0.8mA Common Emitter VCE= 3V 0.7mA 0.6mA 10000 TA=100°C 4 DC Current Gain Collector Current (A) 0.5mA 0.4mA 3 0.3mA 2 10 1 0 1 2 3 4 TA=25°C 100 IB=0.2mA 1 0 1000 5 6 1 10 8000 4000 Collector-Emitter Saturation Voltage (mV) Base-Emitter Saturation Voltage (mV) 1000 Fig. 4 - Collector-Emitter Saturation Voltage Characteristics Fig. 3 - Base-Emitter Saturation Voltage Characteristics 2000 1600 TA=25°C 1200 TA=100°C 800 400 0 50 β=250 100 1000 TA=25°C 1000 TA=100°C 100 10 50 5000 β=250 100 Collector Current (mA) 1000 5000 Collector Current (mA) Fig. 6 - Collector Power Derating Curve Fig. 5 - Base-Emitter Voltage Characteristics 2.5 5000 Collector Power Dissipation (W) 1000 Collcetor Current (mA) 100 Collector Current (mA) Collector-Emitter Voltage (V) TA=100°C 100 TA=25°C 10 1 2.0 1.5 1.0 0.5 Common Emitter VCE=3V 0.1 0 400 800 1200 1600 2000 Base-Emitter Voltage (mV) Rev.3-2-12012020 0.0 0 25 50 75 100 125 150 Ambient Temperature (°C) 3/4 MCCSEMI.COM TIP122L Ordering Information Device Packing Part Number-BP Bulk:50pcs/Tube,1Kpcs/Box,5Kpcs/Carton Note : Adding "-HF" Suffix For Halogen Free, eg. 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