TIP32C-BP

TIP32,TIP32A,TIP32B,TIP32C Features • The Complementary NPN Types are the TIP31 Respectively • Halogen Free Available Upon Request By Adding Suffix "-HF" • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix Designates RoHS Compliant. See Ordering Information) PNP Silicon Power Transistors Maximum Ratings @ 25°C Unless Otherwise Specified • Operating Junction Temperature Range: -65℃ to +150℃ • Storage Temperature Range: -65℃ to +150℃ • Thermal Resistance: 3.125℃/W Junction to Case • Thermal Resistance: 62.5℃/W Junction to Ambient Parameter Symbol Collector-Emitter Voltage TIP32A TIP32B Rating VCBO TIP31 -40 VCEO TIP31C Emitter-Base Voltage S T V A U 1 2 3 H -60 V -80 K -100 VEBO D -5 V Continuous Collector Current IC -3 A Peak Collector Current ICM -5 A Base Current IB -1 A Power Dissipation @TC=25°C PD 40 W Power Dissipation @TA=25°C PD 2 W Note: 1.High Temperature Solder Exemption Applied, see EU Directive Annex 7. G 1/4 N J R V L 1.BASE 2.COLLECTOR 3.EMITTER DIM A B C D F G H J K L N Q R S T U V Rev.3-2-12012020 C F Q -80 -100 TIP31B B -60 TIP32C TIP31A Unit -40 TIP32 Collector-Base Voltage TO-220 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.560 0.625 14.22 15.88 0.380 0.420 9.65 10.67 0.140 0.190 3.56 4.82 0.020 0.045 0.51 1.14 0.139 0.161 3.53 4.09 0.090 0.110 2.29 2.79 ----- 0.250 ----- 6.35 0.012 0.025 0.30 0.64 0.500 0.580 12.70 14.73 0.045 0.060 1.14 1.52 0.190 0.210 4.83 5.33 0.100 0.135 2.54 3.43 0.080 0.115 2.04 2.92 0.045 0.055 1.14 1.39 0.230 0.270 5.84 6.86 ----- 0.050 ----- 1.27 0.045 ----- 1.15 ----- NOTE Φ MCCSEMI.COM TIP32,TIP32A,TIP32B,TIP32C Electrical Characteristics @ TA=25°C Unless Otherwise Specified Parameter Symbol TIP32 Collector-Emitter Breakdown Voltage TIP32A Min Typ Conditions -60 V IC=-30mA, IB=0 -200 µA VCE=-40V, VEB=0 -200 µA VCE=-60V, VEB=0 -200 µA VCE=-80V, VEB=0 TIP32C -200 µA VCE=-100V, VEB=0 TIP32 -300 µA VCE=-30V, IB=0 -300 µA VCE=-30V, IB=0 -300 µA VCE=-60V, IB=0 -300 µA VCE=-60V, IB=0 -1 mA VEB=-5V, IC=0 TIP32B V(BR)CEO -80 -100 TIP32 Collector Cutoff Current Units -40 TIP32C Collector Cutoff Current Max TIP32A TIP32B TIP32A TIP32B ICES ICEO TIP32C Emitter Cutoff Current DC Current Gain IEBO hFE(1) 25 hFE(2) 10 VCE=-4V, IC=-1A VCE=-4V, IC=-3A 50 VCE(sat) -1.2 V IC=-3A, IB=-0.375A Base-Emitter Voltage VBE -1.8 V VCE=-4V, IC=-3A Transition Frequency fT Collector-Emitter Saturation Voltage Rev.3-2-12012020 MHz 3 2/4 VCE=-10V, IC=-500mA MCCSEMI.COM TIP32,TIP32A,TIP32B,TIP32C Curve Characteristics Fig. 1 - Static Characteristics Fig. 2 - DC Current Gain Characteristics -4 75 Common Emitter TA=25°C -100mA -90mA -80mA -3 60 -70mA DC Current Gain Collector Current (A) Common Emitter VCE= - 4V -60mA -50mA -2 -40mA -30mA -1 TA=100°C 45 TA=25°C 30 -20mA 15 IB=-10mA -0 -0 -2 -4 -6 0 -8 -1 -10 -1000 Base-Emitter Saturation Voltage (V) -1.2 -0.1 TA=100°C TA=25°C -1.0 TA=25°C -0.8 -0.6 TA=100°C -0.4 -0.2 β=8 -0.01 -1 -10 -100 -1000 -0.0 -3000 β=8 -1 -10 -100 -1000 -3000 Collector Current (mA) Collector Current (mA) Fig. 6 - Collector Power Derating Curve Fig. 5 - Base-Emitter Voltage Characteristics 2.5 -3000 Collector Power Dissipation (W) -1000 Collcetor Current (mA) -3000 Fig. 4 - Base-Emitter Saturation Voltage Characteristics Fig. 3 - Collector-Emitter Saturation Voltage Characteristics -0.5 Collector-Emitter Saturation Voltage (V) -100 Collector Current (mA) Collector-Emitter Voltage (V) TA=100°C -100 TA=25°C -10 2.0 1.5 1.0 0.5 Common Emitter VCE= - 4V -1 -0.2 0.0 -0.4 -0.6 -0.8 -1.0 -1.2 25 50 75 100 125 150 Ambient Temperature (°C) Base-Emitter Voltage (V) Rev.3-2-12012020 0 3/4 MCCSEMI.COM TIP32,TIP32A,TIP32B,TIP32C Ordering Information Device Packing Part Number-BP Bulk:50pcs/Tube,1Kpcs/Box,5Kpcs/Carton Note : Adding "-HF" Suffix For Halogen Free, eg. 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