TSMBJ0316C

MCC TM Micro Commercial Components
  RPSRQHQWV 20736 Marilla Street Chatsworth    !"# $ %    !"# )HDWXUHV • • • • • Oxide-Glass passivated Junction Bi-Directional protection in a single device Surge capabilities up to 50A@10/1000us or 150A@8/20us High Off-State impedance and Low On-State voltage Plastic material has UL flammability classification 94V -0 TSMBJ0306C THRU TSMBJ0324C Transient Voltage Protection Device 75 to 320 Volts '2$$ 60% 0HFKDQLFDO'DWD • • • Case : Molded plastic Polarity : None cathode band denotes Approx Weight : 0.093grams + - 0D[LPXP5DWLQJ Characteristic Non-repetitive peak impulse current Non-repetitive peak On-state current Operating temperature range Junction and storage temperature range Symbol Value Unit IPP 50A 10/1000us ITSM 20A 8.3ms, one-half cycle TOP -40~125oC $ ' % ) * ',0(16,216 TJ, TSTG o -55~150 C 7KHUPDO5HVLVWDQFH Characteristic Thermal Resistance junction to lead Thermal Resistance junction to ambient Typical positive temperature coefficient for breakdown voltage ( & Symbol Value Unit o RqJL 30 C/W RqJA o 120 C/W ϦVBR/ϦTJ 0.1%/oC ,1&+(6 ',0 0,1 0$; $   %   &  '   (   )   *   +     00 0,1          0$;          127( 68**(67('62/'(5 3$'/$ ( V L/ R L) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time. It does not exceed 30ms. 2. Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal , VR=2Vdc bias. www.mccsemi.com 5HYLVLRQ   MCC TSMBJ0306C thru TSMBJ0324C Fig.1 - Off-State Current v.s Junction Temperature TM Micro Commercial Components Fig.2 - Relative Variation of Breakdown Voltage v.s Junction Temperature 100 VBR(TJ) NORMALISED BREAKDOWN VOLTAGE I(DRM) , OFF-STATE CURRENT(uA) 1.2 10 1 VDRM = 50V 0.1 0.01 1.15 VBR(TJ=25к) 1.1 1.05 1 0.95 0.001 0.9 -25 0 25 50 75 100 125 150 -50 -25 Tj , JUNCTION TEMPERATURE (к) 0 25 50 75 100 125 150 175 Tj ; JUNCTION TEMPERATURE (к) Fig.3 - Relative Variation of Breakover Voltage v.s Junction Temperature Fig.4 - On-State Current v.s On-State Voltage 100 I(T) ; ON-STATE CURRENT (A) NORMALISED BREAKOVER VOLTAGE 1.1 VBO(TJ) VBO(TJ=25к) 1.05 1 0.95 10 TJ = 25к 1 -50 -25 0 25 50 75 100 125 150 175 1 Tj ; JUNCTION TEMPERATURE (к) 3 4 5 6 7 8 9 V(T) ; ON-STATE VOLTAGE Fig.5 - Relative Variation of Holding Current v.s Junction Temperature Fig.6 - Relative Variation of Junction Capacitance v.s Reverse Voltage Bias 2 1 NORMALISED CAPACITANCE NORMALISED HOLDING CURRENT 2 1.5 1 IH(TJ) 0.5 IH(TJ =25к) 0 CO(VR) Tj =25к f=1MHz VRMS = 1V CO(VR = 1V) 0.1 -50 -25 0 25 50 75 Tj ; JUNCTION TEMPERATURE (к) 100 125 1 10 100 VR ; REVERSE VOLTAGE (V) www.mccsemi.com 5HYLVLRQ   MCC TSMBJ0306C thru TSMBJ0324C TM Micro Commercial Components TYPICAL APPLICATION CIRCUITS FUSE RING TELECOM EQUIPMENT TVPD 1 E.G. MODEM TIP RING PTC TVPD 1 TELECOM EQUIPMENT E.G. ISDN TVPD 2 TIP RING PTC PTC TVPD 2 TVPD 1 TVPD 3 TIP TELECOM EQUIPMENT E.G. LINE CARD PTC The PTC (Positive Temperature Coefficient) is an overcurrent protection device. www.mccsemi.com 5HYLVLRQ   MCC TM Micro Commercial Components 0$5.,1*&2'( MCC 03XXC www.mccsemi .com