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TSMBJ0505C-072
Transient Voltage
Protection Device
65 Volts
'2$$
60%
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Symbol
Value
Unit
,33
$
XV
,760
$
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723
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Symbol
Value
Unit
R
RqJ/
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R
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68**(67('62/'(5
3$'/$ ( V L/ R L) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state.
The surge recovery time. It does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal , VR=2Vdc bias.
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Micro Commercial Components
Fig.1 - Off-State Current v.s Junction Temperature
Fig.2 - Relative Variation of
Breakdown Voltage v.s Junction Temperature
100
VBR(TJ)
NORMALISED BREAKDOWN VOLTAGE
I(DRM) , OFF-STATE CURRENT(uA)
1.2
10
1
VDRM = 50V
0.1
0.01
1.15
VBR(TJ=25к)
1.1
1.05
1
0.95
0.001
0.9
-25
0
25
50
75
100
125
150
-50
Tj , JUNCTION TEMPERATURE (к)
-25
0
25
50
75
100
125
150
175
Tj ; JUNCTION TEMPERATURE (к)
Fig.3 - Relative Variation of
Breakover Voltage v.s Junction Temperature
Fig.4 - On-State Current v.s On-State Voltage
100
I(T) ; ON-STATE CURRENT (A)
NORMALISED BREAKOVER VOLTAGE
1.1
VBO(TJ)
VBO(TJ=25к)
1.05
1
0.95
10
TJ = 25к
1
-50
-25
0
25
50
75
100
125
150
175
1
10
Tj ; JUNCTION TEMPERATURE (к)
V(T) ; ON-STATE VOLTAGE
Fig.5 - Relative Variation of
Holding Current v.s Junction Temperature
Fig.6 - Relative Variation of
Junction Capacitance v.s Reverse Voltage Bias
1
1.4
NORMALISED CAPACITANCE
NORMALISED HOLDING CURRENT
1.6
1.2
1
0.8
IH(TJ)
0.6
IH(TJ=25к)
CO(VR)
CO(VR = 1V)
Tj =25к
f=1MHz
VRMS = 1V
0.4
0.2
0.1
-50
-25
0
25
50
75
Tj ; JUNCTION TEMPERATURE (к)
100
125
1
10
100
VR ; REVERSE VOLTAGE (V)
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T60%-005&
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Micro Commercial Components
TYPICAL APPLICATION CIRCUITS
FUSE
RING
TELECOM
EQUIPMENT
TVPD 1
E.G. MODEM
TIP
RING
PTC
TVPD 1
TELECOM
EQUIPMENT
E.G. ISDN
TVPD 2
TIP
RING
PTC
PTC
TVPD 2
TVPD 1
TVPD 3
TIP
TELECOM
EQUIPMENT
E.G. LINE CARD
PTC
The PTC (Positive Temperature Coefficient) is an overcurrent protection device.
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