UF1D

MCC Features
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# UF1A THRU UF1K 1 Amp Surface Mount Super Fast Rectifier 50 to 800 Volts DO-214AA (SMBJ) (LEAD FRAME) H • • • • • For surface mounted applications Glass passivated junction Easy pick and place High Temp Soldering: 260 °C for 10 Seconds At Terminals Superfast Recovery Times For High Efficiency Operating Temperature: -50 °C to +150°C Storage Temperature: -50°C to +150°C Maximum Thermal Resistance; 30°C/W Junction To Lead MCC Device Maximum Maximum Maximum Catalog Marking Reccurrent RMS DC Number Peak Reverse Voltage Blocking Voltage Voltage UF1A UF1A 50V 35V 50V UF1B UF1B 100V 70V 100V UF1D UF1D 200V 140V 200V UF1G UF1G 400V 280V 400V UF1J UF1J 600V 420V 600V UF1K UF1K 800V 560V 800V Maximum Ratings • • • J A C E F G D B Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage DIMENSIONS INCHES MIN .083 .075 .002 ----.030 .065 .200 .160 .130 MM MIN 2.11 1.91 .05 ----.76 1.65 5.08 4.06 3.30 IF(AV) IFSM 1.0A 30A TL = 100°C 8.3ms, half sine UF1A-D UF1G UF1J-K Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time UF1A-G UF1J-K Typical Junction Capacitance VF 1.0V 1.4V 1.7V 10µA 100µA DIM A B C D E F G H J MAX .096 .083 .008 .02 .050 .091 .220 .185 .155 MAX 2.44 2.11 .20 .51 1.27 2.32 5.59 4.70 3.94 NOTE IFM = 1.0A; TJ = 25°C* TA = 25°C TA = 125°C SUGGESTED SOLDER PAD LAYOUT 0.085" IR 0.095” Trr CJ 50ns 100ns 17pF IF=0.5A, IR=1.0A, Irr=0.25A Measured at 1.0MHz, VR=4.0V 0.075” *Pulse test: Pulse width 200 µsec, Duty cycle 2% www.mccsemi.com UF1A thru UF1K t rr +0.5A 0 -0.25 MCC NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. Source Impedance = 50 Ohms -1.0 SET TIME BASE FOR 50 ns/cm 1cm Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 10 TYPICAL TJ = 25 ¢J PEAK FORWARD SURGE CURRENT, AMPERES 100 TJ = 25 ¢J f = 1.0MHz Vsig = 50m Vp-p UF1A IFM, Apk 1.0 UF1G 10 0.1 UF1K 1 0. 1 1 10 100 .01 0 .2 .4 .6 .8 1.0 1.2 1. 4 REVERSE VOLTAGE, VOLTS Fig. 2-FORWARD CHARACTERISTICS PEAK FORWARD SURGE CURRENT, AMPERES Fig. 3- TYPICAL JUNCTION CAPACITANCE 30 25 20 15 10 5 8.3ms SINGLE HALF SINE WAVE JEDEC METHOD 2.0 AVERAGE FORWARD CURRENT AMPERES SINGLE PHASE HALF W AVE RESISTIVE OR INDUCTIVE P.C.B MOUNTED ON 0.315×0.315"(8.0×8.0mm) PAD AREAS 1.0 25 50 75 100 125 150 175 1 2 5 10 20 50 100 LEAD TEMPERATURE, ¢J NUMBER OF CYCLES AT 60Hz Fig. 4- FORWARD CURRENT DERATING CURVE Fig. 5-PEAK FORWARD SURGE CURRENT www.mccsemi.com