MX25L51245G
MX25L51245G
3V, 512M-BIT [x 1/x 2/x 4]
CMOS MXSMIO® (SERIAL MULTI I/O)
FLASH MEMORY
P/N: PM2006
MX25L51245G
Contents
1. FEATURES............................................................................................................................................................... 5
2. GENERAL DESCRIPTION...................................................................................................................................... 6
Table 1. Read performance Comparison.....................................................................................................6
3. PIN CONFIGURATIONS .......................................................................................................................................... 7
4. PIN DESCRIPTION................................................................................................................................................... 7
5. BLOCK DIAGRAM.................................................................................................................................................... 8
6. DATA PROTECTION................................................................................................................................................. 9
Table 2. Protected Area Sizes....................................................................................................................10
Table 3. 4K-bit Secured OTP Definition..................................................................................................... 11
7. Memory Organization............................................................................................................................................ 12
Table 4. Memory Organization...................................................................................................................12
8. DEVICE OPERATION............................................................................................................................................. 13
8-1. 256Mb Address Protocol........................................................................................................................... 15
8-2. Quad Peripheral Interface (QPI) Read Mode........................................................................................... 18
9. COMMAND DESCRIPTION.................................................................................................................................... 19
9-1.
9-2.
9-3.
9-4.
9-5.
9-6.
9-7.
9-8.
9-9.
9-10.
9-11.
9-12.
9-13.
9-14.
9-15.
9-16.
9-17.
9-18.
9-19.
9-20.
9-21.
9-22.
P/N: PM2006
Table 5. Command Set...............................................................................................................................19
Write Enable (WREN)............................................................................................................................... 24
Write Disable (WRDI)................................................................................................................................ 25
Factory Mode Enable (FMEN).................................................................................................................. 26
Read Identification (RDID)........................................................................................................................ 27
Release from Deep Power-down (RDP), Read Electronic Signature (RES)............................................ 28
Read Electronic Manufacturer ID & Device ID (REMS)............................................................................ 30
QPI ID Read (QPIID)................................................................................................................................ 31
Table 6. ID Definitions ...............................................................................................................................31
Read Status Register (RDSR).................................................................................................................. 32
Read Configuration Register (RDCR)....................................................................................................... 33
Write Status Register (WRSR).................................................................................................................. 39
Table 7. Protection Modes..........................................................................................................................40
Enter 4-byte mode (EN4B)....................................................................................................................... 43
Exit 4-byte mode (EX4B).......................................................................................................................... 43
Read Data Bytes (READ)......................................................................................................................... 44
Read Data Bytes at Higher Speed (FAST_READ)................................................................................... 45
Dual Output Read Mode (DREAD)........................................................................................................... 46
2 x I/O Read Mode (2READ).................................................................................................................... 47
Quad Read Mode (QREAD)..................................................................................................................... 48
4 x I/O Read Mode (4READ).................................................................................................................... 49
Fast Double Transfer Rate Read (FASTDTRD)........................................................................................ 51
2 x I/O Double Transfer Rate Read Mode (2DTRD)................................................................................. 52
4 x I/O Double Transfer Rate Read Mode (4DTRD)................................................................................. 53
Preamble Bit ............................................................................................................................................ 55
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Rev. 1.6, July 27, 2017
MX25L51245G
9-23.
9-24.
9-25.
9-26.
9-27.
9-28.
9-29.
9-30.
9-31.
9-32.
9-33.
9-34.
9-35.
9-36.
9-37.
4 Byte Address Command Set.................................................................................................................. 60
Performance Enhance Mode.................................................................................................................... 66
Burst Read................................................................................................................................................ 71
Fast Boot.................................................................................................................................................. 72
Sector Erase (SE)..................................................................................................................................... 75
Block Erase (BE32K)................................................................................................................................ 76
Block Erase (BE)...................................................................................................................................... 77
Chip Erase (CE)........................................................................................................................................ 78
Page Program (PP).................................................................................................................................. 79
4 x I/O Page Program (4PP)..................................................................................................................... 81
Deep Power-down (DP)............................................................................................................................ 82
Enter Secured OTP (ENSO)..................................................................................................................... 83
Exit Secured OTP (EXSO)........................................................................................................................ 83
Read Security Register (RDSCUR).......................................................................................................... 83
Write Security Register (WRSCUR).......................................................................................................... 83
Table 8. Security Register Definition..........................................................................................................84
9-38. Write Protection Selection (WPSEL)......................................................................................................... 85
9-39. Advanced Sector Protection..................................................................................................................... 87
9-40. Program/Erase Suspend/Resume............................................................................................................ 96
9-41. Erase Suspend......................................................................................................................................... 96
9-42. Program Suspend..................................................................................................................................... 96
9-43. Write-Resume........................................................................................................................................... 98
9-44. No Operation (NOP)................................................................................................................................. 98
9-45. Software Reset (Reset-Enable (RSTEN) and Reset (RST)).................................................................... 98
9-46. Read SFDP Mode (RDSFDP)................................................................................................................. 100
Table 9. Signature and Parameter Identification Data Values .................................................................101
Table 10. Parameter Table (0): JEDEC Flash Parameter Tables.............................................................103
Table 11. Parameter Table (1): 4-Byte Instruction Tables......................................................................... 110
Table 12. Parameter Table (2): Macronix Flash Parameter Tables.......................................................... 112
10. RESET................................................................................................................................................................ 114
Table 13. Reset Timing-(Power On)......................................................................................................... 114
Table 14. Reset Timing-(Other Operation)............................................................................................... 114
11. POWER-ON STATE............................................................................................................................................ 115
12. ELECTRICAL SPECIFICATIONS....................................................................................................................... 116
Table 15. ABSOLUTE MAXIMUM RATINGS........................................................................................... 116
Table 16. CAPACITANCE TA = 25°C, f = 1.0 MHz................................................................................... 116
Table 17. DC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 2.7V-3.6V) ......................... 118
Table 18. AC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 2.7V-3.6V) ........................ 119
13. OPERATING CONDITIONS................................................................................................................................ 121
Table 19. Power-Up/Down Voltage and Timing .......................................................................................123
13-1. INITIAL DELIVERY STATE..................................................................................................................... 123
P/N: PM2006
3
Rev. 1.6, July 27, 2017
MX25L51245G
14. ERASE AND PROGRAMMING PERFORMANCE............................................................................................. 124
15. ERASE AND PROGRAMMING PERFORMANCE (Factory Mode).................................................................. 124
16. DATA RETENTION............................................................................................................................................. 125
17. LATCH-UP CHARACTERISTICS....................................................................................................................... 125
18. ORDERING INFORMATION............................................................................................................................... 126
19. PART NAME DESCRIPTION.............................................................................................................................. 127
20. PACKAGE INFORMATION................................................................................................................................. 128
20-1. 16-pin SOP (300mil)............................................................................................................................... 128
20-2. 8-land WSON (8x6mm).......................................................................................................................... 129
20-3. 24-Ball BGA (5x5 ball array)................................................................................................................... 130
21. REVISION HISTORY .......................................................................................................................................... 131
P/N: PM2006
4
Rev. 1.6, July 27, 2017
MX25L51245G
3V 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O)
FLASH MEMORY
1. FEATURES
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Advanced Security Features
- Block lock protection
The BP0-BP3 and T/B status bits define the size
of the area to be protected against program and
erase instructions
- Advanced sector protection function (Solid and
Password Protect)
• Additional 4K bit security OTP
- Features unique identifier
- Factory locked identifiable, and customer lockable
• Command Reset
• Program/Erase Suspend and Resume operation
• Electronic Identification
- JEDEC 1-byte manufacturer ID and 2-byte device ID
- RES command for 1-byte Device ID
- REMS command for 1-byte manufacturer ID and
1-byte device ID
• Support Serial Flash Discoverable Parameters
(SFDP) mode
GENERAL
• Supports Serial Peripheral Interface -- Mode 0 and
Mode 3
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• 512Mb: 536,870,912 x 1 bit structure or
268,435,456 x 2 bits (two I/O mode) structure or
134,217,728 x 4 bits (four I/O mode) structure
• Protocol Support
- Single I/O, Dual I/O and Quad I/O
• Latch-up protected to 100mA from -1V to Vcc +1V
• Fast read for SPI mode
- Support clock frequency up to 166MHz for all
protocols
- Support Fast Read, 2READ, DREAD, 4READ,
QREAD instructions
- Support DTR (Double Transfer Rate) Mode
- Configurable dummy cycle number for fast read
operation
• Quad Peripheral Interface (QPI) available
• Equal Sectors with 4K byte each, or Equal Blocks
with 32K byte each or Equal Blocks with 64K byte
each
- Any Block can be erased individually
• Programming :
- 256byte page buffer
- Quad Input/Output page program(4PP) to enhance
program performance
• Typical 100,000 erase/program cycles
• 20 years data retention
P/N: PM2006
HARDWARE FEATURES
• SCLK Input
- Serial clock input
• SI/SIO0
- Serial Data Input or Serial Data Input/Output for
2 x I/O read mode and 4 x I/O read mode
• SO/SIO1
- Serial Data Output or Serial Data Input/Output
for 2 x I/O read mode and 4 x I/O read mode
• WP#/SIO2
- Hardware write protection or serial data Input/
Output for 4 x I/O read mode
• RESET#/SIO3
- Hardware Reset pin or Serial input & Output for
4 x I/O read mode
• PACKAGE
- 16-pin SOP (300mil)
- 8-land WSON (8x6mm)
- 24-Ball BGA (5x5 ball array)
- All devices are RoHS Compliant and Halogen-free
5
Rev. 1.6, July 27, 2017
MX25L51245G
2. GENERAL DESCRIPTION
MX25L51245G is 512Mb bits serial Flash memory, which is configured as 67,108,864 x 8 internally. When it is in
two or four I/O mode, the structure becomes 268,435,456 bits x 2 or 134,217,728 bits x 4. MX25L51245G feature
a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus while it is in single I/O
mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial
access to the device is enabled by CS# input.
When it is in two I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits
input and data output. When it is in four I/O read mode, the SI pin, SO pin, WP# and RESET# pin become SIO0
pin, SIO1 pin, SIO2 pin and SIO3 pin for address/dummy bits input and data output.
The MX25L51245G MXSMIO (Serial Multi I/O) provides sequential read operation on whole chip.
After program/erase command is issued, auto program/erase algorithms which program/erase and verify the
specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256
bytes) basis, or word basis for erase command is executed on sector (4K-byte), block (32K-byte), or block (64K-byte),
or whole chip basis.
To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read
command can be issued to detect completion status of a program or erase operation via WIP bit.
Advanced security features enhance the protection and security functions, please see security features section for
more details.
When the device is not in operation and CS# is high, it is put in standby mode.
The MX25L51245G utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after
100,000 program and erase cycles.
Table 1. Read performance Comparison
Numbers of
Dummy Cycles
Fast Read
(MHz)
Dual Output
Fast Read
(MHz)
Quad Output
Fast Read
(MHz)
Dual IO
Fast Read
(MHz)
Quad IO
Fast Read
(MHz)
4
-
-
-
84*
70
6
133
133
104
104
84*
8
133*
133*
133*
133
104
10
166
166
166
166
133
Numbers of
Dummy Cycles
Fast DTR Read
Dual I/O DT Read
Quad I/O DT Read
4
-
52*
42
6
66
66
52*
8
66*
66
66
10
83
83
100
(MHz)
(MHz)
(MHz)
Note: * mean default status
P/N: PM2006
6
Rev. 1.6, July 27, 2017
MX25L51245G
4. PIN DESCRIPTION
3. PIN CONFIGURATIONS
16-PIN SOP (300mil)
NC/SIO3
VCC
RESET#
NC
DNU
DNU
CS#
SO/SIO1
SYMBOL
CS#
1
2
3
4
5
6
7
8
SCLK
SI/SIO0
NC
NC
DNU
DNU
GND
WP#/SIO2
16
15
14
13
12
11
10
9
SI/SIO0
SO/SIO1
SCLK
WP#/SIO2
8-WSON (8x6mm)
CS#
SO/SIO1
WP#/SIO2
GND
1
2
3
4
8
7
6
5
NC/SIO3
VCC
RESET#/SIO3
SCLK
SI/SIO0
RESET#
VCC
GND
NC
DNU
Note: The pin of RESET# or WP#/SIO2 will remain
internal pull up function while this pin is not
physically connected in system configuration.
However, the internal pull up function will be
disabled if the system has physical connection
to RESET# or WP#/SIO2 pin.
24-Ball BGA (5x5 ball array)
5
NC
NC
NC
NC
RESET#
VCC
NC
GND
NC
SI/SIO0
NC
NC
SCLK
CS#
SO/SIO1
NC
NC
NC
B
C
DESCRIPTION
Chip Select
Serial Data Input (for 1 x I/O)/ Serial
Data Input & Output (for 2xI/O or 4xI/
O read mode)
Serial Data Output (for 1 x I/O)/ Serial
Data Input & Output (for 2xI/O or 4xI/
O read mode)
Clock Input
Write protection Active low or Serial
Data Input & Output (for 4xI/O read
mode)
No Connection or Serial Data Input &
Output (for 4xI/O read mode)
Hardware Reset Pin Active low
+ 3V Power Supply
Ground
No Connection
Do Not Use (It may connect to internal
signal inside)
NC
4
WP#/SIO2 NC/SIO3
NC
3
2
1
A
P/N: PM2006
NC
D
NC
E
7
Rev. 1.6, July 27, 2017
MX25L51245G
5. BLOCK DIAGRAM
X-Decoder
Address
Generator
SI/SIO0
SO/SIO1
SIO2 *
SIO3 *
WP# *
HOLD# *
Y-Decoder
Data
Register
SCLK
Sense
Amplifier
SRAM
Buffer
RESET# *
CS#
Memory Array
Mode
Logic
State
Machine
HV
Generator
Clock Generator
Output
Buffer
* Depends on part number options.
P/N: PM2006
8
Rev. 1.6, July 27, 2017
MX25L51245G
6. DATA PROTECTION
During power transition, there may be some false system level signals which result in inadvertent erasure or
programming. The device is designed to protect itself from these accidental write cycles.
The state machine will be reset as standby mode automatically during power up. In addition, the control register
architecture of the device constrains that the memory contents can only be changed after specific command
sequences have completed successfully.
In the following, there are several features to protect the system from the accidental write cycles during VCC powerup and power-down or from system noise.
• Valid command length checking: The command length will be checked whether it is at byte base and completed
on byte boundary.
• Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before
other command to change data.
• Deep Power Down Mode: By entering deep power down mode, the flash device also is under protected from
writing all commands except Release from deep power down mode command (RDP) and Read Electronic
Signature command (RES), Erase/Program suspend command, Erase/Program resume command and softreset
command.
• Advanced Security Features: there are some protection and security features which protect content from
inadvertent write and hostile access.
P/N: PM2006
9
Rev. 1.6, July 27, 2017
MX25L51245G
I. Block lock protection
- The Software Protected Mode (SPM) use (BP3, BP2, BP1, BP0 and T/B) bits to allow part of memory to be
protected as read only. The protected area definition is shown as Table 2 Protected Area Sizes, the protected
areas are more flexible which may protect various area by setting value of BP0-BP3 bits.
- The Hardware Protected Mode (HPM) use WP#/SIO2 to protect the (BP3, BP2, BP1, BP0) bits and Status
Register Write Protect bit.
- In four I/O and QPI mode, the feature of HPM will be disabled.
Table 2. Protected Area Sizes
Protected Area Sizes (T/B bit = 0)
Status bit
BP3
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
BP2
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
BP1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
BP0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Protect Level
512Mb
0 (none)
1 (1 block, protected block 1023rd)
2 (2 blocks, protected block 1022nd-1023rd)
3 (4 blocks, protected block 1020th-1023rd)
4 (8 blocks, protected block 1016th-1023rd)
5 (16 blocks, protected block 1008th-1023rd)
6 (32 blocks, protected block 992nd-1023rd)
7 (64 blocks, protected block 960th-1023rd)
8 (128 blocks, protected block 896th-1023rd)
9 (256 blocks, protected block 768th-1023rd)
10 (512 blocks, protected block 512th-1023rd)
11 (1024 blocks, protected all)
12 (1024 blocks, protected all)
13 (1024 blocks, protected all)
14 (1024 blocks, protected all)
15 (1024 blocks, protected all)
Protected Area Sizes (T/B bit = 1)
Status bit
BP3
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
P/N: PM2006
BP2
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
BP1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
Protect Level
BP0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
512Mb
0 (none)
1 (1 block, protected block 0th)
2 (2 blocks, protected block 0th-1st)
3 (4 blocks, protected block 0th-3rd)
4 (8 blocks, protected block 0th-7th)
5 (16 blocks, protected block 0th-15th)
6 (32 blocks, protected block 0th-31st)
7 (64 blocks, protected block 0th-63rd)
8 (128 blocks, protected block 0th-127th)
9 (256 blocks, protected block 0th-255th)
10 (512 blocks, protected block 0th-511th)
11 (1024 blocks, protected all)
12 (1024 blocks, protected all)
13 (1024 blocks, protected all)
14 (1024 blocks, protected all)
15 (1024 blocks, protected all)
10
Rev. 1.6, July 27, 2017
MX25L51245G
II. Additional 4K-bit secured OTP for unique identifier: to provide 4K-bit one-time program area for setting
device unique serial number - Which may be set by factory or system customer.
- Security register bit 0 indicates whether the chip is locked by factory or not.
- To program the 4K-bit secured OTP by entering 4K-bit secured OTP mode (with Enter Security OTP command),
and going through normal program procedure, and then exiting 4K-bit secured OTP mode by writing Exit Security
OTP command.
- Customer may lock-down the customer lockable secured OTP by writing WRSCUR(write security register)
command to set customer lock-down bit1 as "1". Please refer to "Table 8. Security Register Definition" for
security register bit definition and "Table 3. 4K-bit Secured OTP Definition" for address range definition.
- Note: Once lock-down whatever by factory or customer, it cannot be changed any more. While in 4K-bit secured
OTP mode, array access is not allowed.
Table 3. 4K-bit Secured OTP Definition
Address range
Size
Standard Factory Lock
xxx000~xxx00F
128-bit
ESN (electrical serial number)
xxx010~xxx1FF
3968-bit
N/A
P/N: PM2006
11
Customer Lock
Determined by customer
Rev. 1.6, July 27, 2017
MX25L51245G
7. Memory Organization
Table 4. Memory Organization
2042
…
3FEFFFFh
…
3FF0FFFh
3FEF000h
…
individual 16 sectors
lock/unlock unit:4K-byte
…
…
…
3FF0000h
16367
3FE8000h
3FE8FFFh
16359
3FE7000h
3FE7FFFh
…
16360
16352
3FE0000h
3FE0FFFh
16351
3FDF000h
3FDFFFFh
…
1021
16368
16344
3FD8000h
3FD8FFFh
16343
3FD7000h
3FD7FFFh
…
2043
3FF7FFFh
…
2044
individual block
lock/unlock unit:64K-byte
3FF8FFFh
3FF7000h
…
1022
3FF8000h
16375
…
2045
16376
…
2046
3FFFFFFh
…
1023
Address Range
3FFF000h
…
2047
…
16383
…
Sector
…
Block(64K-byte) Block(32K-byte)
16336
3FD0000h
3FD0FFFh
47
002F000h
002FFFFh
0
0
P/N: PM2006
…
…
…
…
…
0020FFFh
001F000h
001FFFFh
…
0020000h
31
…
32
0018000h
0018FFFh
23
0017000h
0017FFFh
…
24
0010000h
0010FFFh
15
000F000h
000FFFFh
…
16
8
0008000h
0008FFFh
7
0007000h
0007FFFh
…
1
0027FFFh
…
2
027000h
…
1
39
…
3
0028FFFh
…
individual block
lock/unlock unit:64K-byte
0028000h
…
4
40
…
2
…
5
…
individual block
lock/unlock unit:64K-byte
0
0000000h
0000FFFh
12
individual 16 sectors
lock/unlock unit:4K-byte
Rev. 1.6, July 27, 2017
MX25L51245G
8. DEVICE OPERATION
1. Before a command is issued, status register should be checked to ensure device is ready for the intended
operation.
2. When incorrect command is inputted to this device, this device becomes standby mode and keeps the standby
mode until next CS# falling edge. In standby mode, SO pin of this device should be High-Z.
3. When correct command is inputted to this device, this device becomes active mode and keeps the active mode
until next CS# rising edge.
4. Input data is latched on the rising edge of Serial Clock (SCLK) and data shifts out on the falling edge of SCLK.
The difference of Serial mode 0 and mode 3 is shown as "Serial Modes Supported".
5. For the following instructions: RDID, RDSR, RDSCUR, READ/READ4B, FAST_READ/FAST_READ4B,
2READ/2READ4B, DREAD/DREAD4B, 4READ/4READ4B, QREAD/QREAD4B, RDSFDP, RES, REMS, QPIID,
RDDPB, RDSPB, RDPASS, RDLR, RDEAR, RDFBR, RDSPBLK, RDCR, the shifted-in instruction sequence is
followed by a data-out sequence. After any bit of data being shifted out, the CS# can be high. For the following
instructions: WREN, WRDI, WRSR, SE/SE4B, BE32K/BE32K4B, BE/BE4B, CE, PP/PP4B, 4PP/4PP4B, DP,
ENSO, EXSO, WRSCUR, EN4B, EX4B, WPSEL, GBLK, GBULK, SPBLK, SUSPEND, RESUME, NOP, RSTEN,
RST, EQIO, RSTQIO the CS# must go high exactly at the byte boundary; otherwise, the instruction will be
rejected and not executed.
6. During the progress of Write Status Register, Program, Erase operation, to access the memory array is
neglected and not affect the current operation of Write Status Register, Program, Erase.
Figure 1. Serial Modes Supported
CPOL
CPHA
shift in
(Serial mode 0)
0
0
SCLK
(Serial mode 3)
1
1
SCLK
SI
shift out
MSB
SO
MSB
Note:
CPOL indicates clock polarity of Serial master, CPOL=1 for SCLK high while idle, CPOL=0 for SCLK low while not
transmitting. CPHA indicates clock phase. The combination of CPOL bit and CPHA bit decides which Serial mode is
supported.
P/N: PM2006
13
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 2. Serial Input Timing
tSHSL
CS#
tCHSL
tSLCH
tCHSH
tSHCH
SCLK
tDVCH
tCHCL
tCHDX
tCLCH
LSB
MSB
SI
High-Z
SO
Figure 3. Output Timing (STR mode)
CS#
tCH
SCLK
tCLQV
tCL
tCLQV
tCLQX
tSHQZ
tCLQX
LSB
SO
SI
ADDR.LSB IN
Figure 4. Output Timing (DTR mode)
CS#
tCH
SCLK
tCLQV
tCLQX
tCL
tCLQV
tCLQX
LSB
SO
SI
tSHQZ
ADDR.LSB IN
P/N: PM2006
14
Rev. 1.6, July 27, 2017
MX25L51245G
8-1. 256Mb Address Protocol
The original 24 bit address protocol of serial Flash can only access density size below 128Mb. For the memory
device of 256Mb and above, the 32bit address is requested for access higher memory size. The MX25L51245G
provides three different methods to access the whole density:
(1) Command entry 4-byte address mode:
Issue Enter 4-Byte mode command to set up the 4BYTE bit in Configuration Register bit. After 4BYTE bit has
been set, the number of address cycle become 32-bit.
(2) Extended Address Register (EAR):
configure the memory device into four 128Mb segments to select which one is active through the EAR.
(3) 4-byte Address Command Set:
When issuing 4-byte address command set, 4-byte address (A31-A0) is requested after the instruction code.
Please note that it is not necessary to issue EN4B command before issuing any of 4-byte command set.
Enter 4-Byte Address Mode
In 4-byte Address mode, all instructions are 32-bits address clock cycles. By using EN4B and EX4B to enable and
disable the 4-byte address mode.
When 4-byte address mode is enabled, the EAR becomes "don't care" for all instructions requiring 4-byte
address. The EAR function will be disabled when 4-byte mode is enabled.
Extended Address Register
The device provides an 8-bit volatile register for extended Address Register: it identifies the extended address (A31~A24)
above 128Mb density by using original 3-byte address.
Extended Address Register (EAR)
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
A31
A30
A29
A28
A27
A26
A25
A24
For the MX25L51245G the A31 to A26 are Don't Care. During EAR, reading these bits will read as 0. The bit 0 is
default as "0".
P/N: PM2006
15
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 7. EAR Operation Segments
03FFFFFFh
EAR= 11
03000000h
02FFFFFFh
EAR= 10
02000000h
01FFFFFFh
EAR= 01
01000000h
00FFFFFFh
EAR= 00
00000000h
When under EAR mode, Read, Program, Erase operates in the selected segment by using 3-byte address mode.
For the read operation, the whole array data can be continually read out with one command. Data output starts from
the selected top or bottom 128Mb, but it can cross the boundary. When the last byte of the segment is reached,
the next byte (in a continuous reading) is the first byte of the next segment. However, the EAR (Extended Address
Register) value does not change. The random access reading can only be operated in the selected segment.
The Chip erase command will erase the whole chip and is not limited by EAR selected segment. However, the
sector erase, block erase, program operation are limited in selected segment and will not cross the boundary.
Figure 5. Write EAR Register (WREAR) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
command
SI
EAR In
C5h
7
4
5
3
2
1
0
MSB
High-Z
SO
6
Figure 6. Write EAR Register (WREAR) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
Mode 3
SCLK
Mode 0
Mode 0
Command EAR in
SIO[3:0]
P/N: PM2006
C5h
16
H0
L0
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 8. Read EAR (RDEAR) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
command
C8h
SI
SO
EAR Out
High-Z
7
6
5
4
3
EAR Out
2
1
0
7
6
5
4
3
2
1
0
7
MSB
MSB
Figure 9. Read EAR (RDEAR) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
N
SCLK
Mode 0
SIO[3:0]
C8h
H0 L0 H0 L0 H0 L0
H0 L0
MSB LSB
EAR Out
P/N: PM2006
EAR Out
17
EAR Out
EAR Out
Rev. 1.6, July 27, 2017
MX25L51245G
8-2. Quad Peripheral Interface (QPI) Read Mode
QPI protocol enables user to take full advantage of Quad I/O Serial NOR Flash by providing the Quad I/O interface
in command cycles, address cycles and as well as data output cycles.
Enable QPI mode
By issuing EQIO command (35h), the QPI mode is enabled.
Figure 10. Enable QPI Sequence
CS#
MODE 3
SCLK
0
1
2
3
4
5
6
7
MODE 0
SIO0
35h
SIO[3:1]
Reset QPI (RSTQIO)
To reset the QPI mode, the RSTQIO (F5h) command is required. After the RSTQIO command is issued, the device
returns from QPI mode (4 I/O interface in command cycles) to SPI mode (1 I/O interface in command cycles).
Note:
For EQIO and RSTQIO commands, CS# high width has to follow "write spec" tSHSL (as defined in "Table 18. AC
CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 2.7V-3.6V)") for next instruction.
Figure 11. Reset QPI Mode
CS#
SCLK
SIO[3:0]
P/N: PM2006
F5h
18
Rev. 1.6, July 27, 2017
MX25L51245G
9. COMMAND DESCRIPTION
Table 5. Command Set
Read/Write Array Commands
FAST READ
2READ
(2 x I/O read
(fast read
command)
data)
4READ
READ
(normal read)
Mode
1st byte
SPI
3/4
03 (hex)
SPI
3/4
0B (hex)
SPI
3/4
BB (hex)
SPI
3/4
3B (hex)
SPI/QPI
3/4
EB (hex)
SPI
3/4
6B (hex)
SPI
3/4
0D (hex)
SPI
3/4
BD (hex)
2nd byte
ADD1
ADD1
ADD1
ADD1
ADD1
ADD1
ADD1
ADD1
3rd byte
ADD2
ADD2
ADD2
ADD2
ADD2
ADD2
ADD2
ADD2
4th byte
ADD3
Address Bytes
5th byte
DREAD
(1I 2O read)
QREAD
(4 I/O read
start from
(1I 4O read)
bottom 128Mb)
FASTDTRD
2DTRD
(fast DT
(Dual I/O DT
read)
Read)
Command
(byte)
ADD3
ADD3
ADD3
ADD3
ADD3
ADD3
ADD3
Dummy*
Dummy*
Dummy*
Dummy*
Dummy*
Dummy*
Dummy*
Data Cycles
n bytes read n bytes read
Quad I/
n bytes read n bytes read n bytes read n bytes read
out until CS# out until CS# out by 2 x I/ out by Dual O read for out by Quad out (Double
output until
Transfer
bottom
goes high
goes high O until CS# output until
Rate) until
goes high
CS# goes 128Mb with CS# goes
6 dummy
high
CS# goes
high
high
cycles
Action
Mode
4DTRD
(Quad I/O DT
Read)
SPI/QPI
PP
(page
program)
SPI/QPI
4PP
(quad page
program)
SPI
SE
(sector
erase)
SPI/QPI
Address Bytes
3/4
3/4
3/4
3/4
3/4
3/4
1st byte
ED (hex)
02 (hex)
38 (hex)
20 (hex)
52 (hex)
D8 (hex)
2nd byte
ADD1
ADD1
ADD1
ADD1
ADD1
3rd byte
ADD2
ADD2
ADD2
ADD2
ADD2
4th byte
ADD3
ADD3
ADD3
ADD3
ADD3
5th byte
Dummy*
Command
(byte)
Data Cycles
Action
n bytes read
out (Double
Transfer
Rate) by 2xI/
O until CS#
goes high
BE 32K
BE
CE
(block erase (block erase
(chip erase)
32KB)
64KB)
SPI/QPI
SPI/QPI
SPI/QPI
1-256
1-256
n bytes read to program
quad input to erase the to erase the to erase the
out (Double the selected to program
selected
selected 32K
selected
the selected
sector
block
block
Transfer
page
Rate) by 4xI/
page
O until CS#
goes high
0
60 or C7
(hex)
to erase
whole chip
* Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in configuration register.
Note:
P/N: PM2006
Please note the address cycles above are based on 3-byte address mode. After enter 4-byte address
mode by EN4B command, the address cycles will be increased to 4byte.
19
Rev. 1.6, July 27, 2017
MX25L51245G
Read/Write Array Commands (4 Byte Address Command Set)
Command
(byte)
Mode
READ4B
FAST READ4B
2READ4B
DREAD4B
4READ4B
QREAD4B
Address Bytes
SPI
4
SPI
4
SPI
4
SPI
4
SPI/QPI
4
SPI
4
FRDTRD4B
(fast DT read)
SPI
4
1st byte
13 (hex)
0C (hex)
BC (hex)
3C (hex)
EC (hex)
6C (hex)
0E (hex)
2nd byte
ADD1
ADD1
ADD1
ADD1
ADD1
ADD1
ADD1
3rd byte
ADD2
ADD2
ADD2
ADD2
ADD2
ADD2
ADD2
4th byte
ADD3
ADD3
ADD3
ADD3
ADD3
ADD3
ADD3
5th byte
ADD4
6th byte
ADD4
ADD4
ADD4
ADD4
ADD4
ADD4
Dummy*
Dummy*
Dummy*
Dummy*
Dummy*
Dummy*
Data Cycles
Action
Read data
n bytes read
read data byte read data byte read data byte Read data byte read data byte
out (Double
by
by 2 x I/O with by Dual Output by 4 x I/O with byte by Quad
by
with 4 byte
4 byte address Output with 4 Transfer Rate)
4 byte address 4 byte address 4 byte address
byte address until CS# goes
address
high
4DTRD4B
(Quad I/O DT
Read)
SPI/QPI
4
PP4B
4PP4B
Address Bytes
2DTRD4B
(Dual I/O DT
Read)
SPI
4
SPI/QPI
4
Command
(byte)
Mode
SPI
4
BE4B
(block erase
64KB)
SPI/QPI
4
BE32K4B
(block erase
32KB)
SPI/QPI
4
SE4B
(Sector erase
4KB)
SPI/QPI
4
1st byte
BE (hex)
EE (hex)
12 (hex)
3E (hex)
DC (hex)
5C (hex)
21 (hex)
2nd byte
ADD1
ADD1
ADD1
ADD1
ADD1
ADD1
ADD1
3rd byte
ADD2
ADD2
ADD2
ADD2
ADD2
ADD2
ADD2
4th byte
ADD3
ADD3
ADD3
ADD3
ADD3
ADD3
ADD3
ADD4
ADD4
ADD4
ADD4
ADD4
5th byte
ADD4
ADD4
6th byte
Dummy*
Dummy*
Data Cycles
Action
P/N: PM2006
1-256
1-256
to erase the
to erase the
to erase the
n bytes read to program the Quad input to
n bytes read
out (Double
out (Double selected page program the selected (64KB) selected (32KB) selected (4KB)
selected page
block with
block with
sector with
Transfer Rate) Transfer Rate)
with 4byte
by 2xI/O until by 4xI/O until
address
with 4byte
4byte address 4byte address 4byte address
address
CS# goes high CS# goes high
20
Rev. 1.6, July 27, 2017
MX25L51245G
Register/Setting Commands
Mode
SPI/QPI
SPI/QPI
SPI/QPI
SPI/QPI
RDCR
(read
configuration
register)
SPI/QPI
1st byte
06 (hex)
04 (hex)
41 (hex)
05 (hex)
15 (hex)
Command
(byte)
FMEN
WREN
WRDI
(factory mode
(write enable) (write disable)
enable)
RDSR
(read status
register)
WRSR
RDEAR
(write status/ (read extended
configuration
address
register)
register)
SPI/QPI
SPI/QPI
01 (hex)
2nd byte
Values
3rd byte
Values
C8 (hex)
4th byte
5th byte
Data Cycles
Action
Command
(byte)
Mode
1st byte
sets the (WEL)
resets the
enable factory to read out the to read out the
write enable
(WEL) write
mode
values of the values of the
latch bit
enable latch bit
status register configuration
register
WREAR
WPSEL
(write extended
(Write Protect
address
Selection)
register)
SPI/QPI
C5 (hex)
SPI/QPI
68 (hex)
EQIO
(Enable QPI)
RSTQIO
(Reset QPI)
EN4B
(enter 4-byte
mode)
SPI
35 (hex)
QPI
F5 (hex)
SPI/QPI
B7 (hex)
1-2
to write new
values of the
status/
configuration
register
EX4B
(exit 4-byte
mode)
SPI/QPI
E9 (hex)
read extended
address
register
PGM/ERS
Suspend
(Suspends
Program/
Erase)
SPI/QPI
B0 (hex)
2nd byte
3rd byte
4th byte
5th byte
Data Cycles
Action
Command
(byte)
Mode
1st byte
1
write extended to enter and
address
enable individal
register
block protect
mode
PGM/ERS
Resume
(Resumes
Program/
Erase)
SPI/QPI
30 (hex)
Entering the
QPI mode
Exiting the QPI to enter 4-byte to exit 4-byte
mode
mode and set mode and clear
4BYTE bit as 4BYTE bit to
"1"
be "0"
DP (Deep
power down)
RDP (Release
from deep
power down)
SBL
(Set Burst
Length)
SPI/QPI
B9 (hex)
SPI/QPI
AB (hex)
SPI/QPI
C0 (hex)
enters deep
power down
mode
release from
deep power
down mode
to set Burst
length
RDFBR
WRFBR
ESFBR
(read fast boot (write fast boot (erase fast
register)
register)
boot register)
SPI
16(hex)
SPI
17(hex)
1-4
4
SPI
18(hex)
2nd byte
3rd byte
4th byte
5th byte
Data Cycles
Action
P/N: PM2006
21
Rev. 1.6, July 27, 2017
MX25L51245G
ID/Security Commands
Command
(byte)
Mode
Address Bytes
1st byte
REMS
RDID
RES
(read electronic
QPIID
(read identific- (read electronic
manufacturer & (QPI ID Read)
ation)
ID)
device ID)
SPI
SPI/QPI
SPI
QPI
0
0
0
0
9F (hex)
AB (hex)
90 (hex)
AF (hex)
2nd byte
x
3rd byte
x
4th byte
Address Bytes
SPI/QPI
0
1st byte
2B (hex)
2F (hex)
Mode
RDSCUR
(read security
register)
EXSO
(exit secured
OTP)
SPI/QPI
3
5A (hex)
SPI/QPI
0
B1 (hex)
SPI/QPI
0
C1 (hex)
ADD1
x
ADD2
ADD1(Note 2)
ADD3
outputs JEDEC to read out
output the
ID: 1-byte
1-byte Device Manufacturer
Manufacturer
ID
ID & Device ID
ID & 2-byte
Device ID
WRSCUR
(write
security
register)
SPI/QPI
0
Command
(byte)
ENSO
(enter secured
OTP)
x
5th byte
Action
RDSFDP
ID in QPI
interface
Dummy(8)(Note 4)
Read SFDP
to enter the
to exit the
mode
4K-bit secured 4K-bit secured
OTP mode
OTP mode
SPI
0
WRPASS
(write
password
register)
SPI
0
RDPASS
(read
password
register)
SPI
0
2C (hex)
2D (hex)
28 (hex)
27 (hex)
2
2
1-8
1-8
GBLK
(gang block
lock)
GBULK
(gang block
unlock)
WRLR
(write Lock
register)
RDLR
(read Lock
register)
SPI/QPI
0
SPI/QPI
0
SPI
0
7E (hex)
98 (hex)
2nd byte
3rd byte
4th byte
5th byte
Data Cycles
Action
whole chip
to read value to set the
of security lock-down bit write protect
register
as "1" (once
lock-down,
cannot be
updated)
whole chip
unprotect
Address Bytes
PASSULK
(password
unlock)
SPI
0
WRSPB
(SPB bit
program)
SPI
4
ESSPB
(all SPB bit
erase)
SPI
0
RDSPB
(read SPB
status)
SPI
4
SPBLK
(SPB lock
set)
SPI
0
1st byte
29 (hex)
E3 (hex)
E4 (hex)
E2 (hex)
A6 (hex)
Command
(byte)
Mode
RDSPBLK
WRDPB
(SPB lock
(write DPB
register read) register)
SPI
SPI
0
4
A7 (hex)
RDDPB
(read DPB
register)
SPI
4
E1 (hex)
E0 (hex)
2nd byte
ADD1
ADD1
ADD1
ADD1
3rd byte
ADD2
ADD2
ADD2
ADD2
4th byte
ADD3
ADD3
ADD3
ADD3
5th byte
ADD4
ADD4
ADD4
ADD4
1
1
Data Cycles
8
1
2
Action
P/N: PM2006
22
Rev. 1.6, July 27, 2017
MX25L51245G
Reset Commands
Mode
SPI/QPI
SPI/QPI
RST
(Reset
Memory)
SPI/QPI
1st byte
00 (hex)
66 (hex)
99 (hex)
Command
(byte)
NOP
RSTEN
(No Operation) (Reset Enable)
2nd byte
3rd byte
4th byte
5th byte
Action
(Note 3)
Note 1: It is not recommended to adopt any other code not in the command definition table, which will potentially enter the hidden mode.
Note 2: ADD=00H will output the manufacturer ID first and ADD=01H will output device ID first.
Note 3: The RSTEN command must be executed before executing the RST command. If any other command is issued
in-between RSTEN and RST, the RST command will be ignored.
Note 4: The number in parentheses after "ADD" or "Data" stands for how many clock cycles it has. For example, "Data(8)"
represents there are 8 clock cycles for the data in. Please note the number after "ADD" are based on 3-byte address
mode, for 4-byte address mode, which will be increased.
P/N: PM2006
23
Rev. 1.6, July 27, 2017
MX25L51245G
9-1. Write Enable (WREN)
The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP/
PP4B, 4PP/4PP4B, SE/SE4B, BE32K/BE32K4B, BE/BE4B, CE, and WRSR, which are intended to change the
device content WEL bit should be set every time after the WREN instruction setting the WEL bit.
The sequence of issuing WREN instruction is: CS# goes low→sending WREN instruction code→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in
SPI mode.
Figure 12. Write Enable (WREN) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
06h
High-Z
SO
Figure 13. Write Enable (WREN) Sequence (QPI Mode)
CS#
0
Mode 3
1
SCLK
Mode 0
Command
06h
SIO[3:0]
P/N: PM2006
24
Rev. 1.6, July 27, 2017
MX25L51245G
9-2. Write Disable (WRDI)
The Write Disable (WRDI) instruction is to reset Write Enable Latch (WEL) bit.
The sequence of issuing WRDI instruction is: CS# goes low→sending WRDI instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in
SPI mode.
The WEL bit is reset by following situations:
- Power-up
- Reset# pin driven low
- WRDI command completion
- WRSR command completion
- PP/PP4B command completion
- 4PP/4PP4B command completion
- SE/SE4B command completion
- BE32K/BE32K4B command completion
- BE/BE4B command completion
- CE command completion
- PGM/ERS Suspend command completion
- Softreset command completion
- WRSCUR command completion
- WPSEL command completion
- GBLK command completion
- GBULK command completion
- WREAR command completion
- WRLR command completion
- WRPASS command completion
- PASSULK command completion
- SPBLK command completion
- WRSPB command completion
- ESSPB command completion
- WRDPB command completion
- WRFBR command completion
- ESFBR command completion
Figure 14. Write Disable (WRDI) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
SI
SO
P/N: PM2006
Command
04h
High-Z
25
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 15. Write Disable (WRDI) Sequence (QPI Mode)
CS#
0
Mode 3
1
SCLK
Mode 0
Command
04h
SIO[3:0]
9-3. Factory Mode Enable (FMEN)
The Factory Mode Enable (FMEN) instruction is for enhance Program and Erase performance for increase factory
production throughput. The FMEN instruction need to combine with the instructions which are intended to change
the device content, like PP/PP4B, 4PP/4PP4B, SE/SE4B, BE32K/BE32K4B, BE/BE4B, and CE.
The sequence of issuing FMEN instruction is: CS# goes low→sending FMEN instruction code→ CS# goes high. A
valid factory mode operation need to included three sequences: WREN instruction → FMEN instruction→ Program
or Erase instruction.
Suspend command is not acceptable under factory mode.
The FMEN is reset by following situations
- Power-up
- Reset# pin driven low
- PP/PP4B command completion
- 4PP/4PP4B command completion
- SE/SE4B command completion
- BE32K/BE32K4B command completion
- BE/BE4B command completion
- CE command completion
- Softreset command completion
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in
SPI mode.
Figure 16. Factory Mode Enable (FMEN) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
SO
P/N: PM2006
41h
High-Z
26
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 17. Factory Mode Enable (FMEN) Sequence (QPI Mode)
CS#
0
Mode 3
1
SCLK
Mode 0
Command
41h
SIO[3:0]
9-4. Read Identification (RDID)
The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The Macronix
Manufacturer ID and Device ID are listed as Table 6 ID Definitions.
The sequence of issuing RDID instruction is: CS# goes low→ sending RDID instruction code→24-bits ID data out
on SO→ to end RDID operation can drive CS# to high at any time during data out.
While Program/Erase operation is in progress, it will not decode the RDID instruction, therefore there's no effect on
the cycle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby
stage.
Figure 18. Read Identification (RDID) Sequence (SPI mode only)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
13 14 15 16 17 18
28 29 30 31
SCLK
Mode 0
Command
SI
9Fh
Manufacturer Identification
SO
High-Z
7
6
5
2
MSB
P/N: PM2006
1
Device Identification
0 15 14 13
3
2
1
0
MSB
27
Rev. 1.6, July 27, 2017
MX25L51245G
9-5. Release from Deep Power-down (RDP), Read Electronic Signature (RES)
The Release from Deep Power-down (RDP) instruction is completed by driving Chip Select (CS#) High. When Chip
Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was not previously in the
Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously in
the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES2, and Chip
Select (CS#) must remain High for at least tRES2(max), as specified in Table 18 AC Characteristics. Once in the
Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. The
RDP instruction is only for releasing from Deep Power Down Mode. Reset# pin goes low will release the Flash from
deep power down mode.
RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as Table 6 ID
Definitions. This is not the same as RDID instruction. It is not recommended to use for new design. For new design,
please use RDID instruction.
Even in Deep power-down mode, the RDP and RES are also allowed to be executed, only except the device is in
progress of program/erase/write cycle; there's no effect on the current program/erase/write cycle in progress.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs repeatedly
if continuously send the additional clock cycles on SCLK while CS# is at low. If the device was not previously in
Deep Power-down mode, the device transition to standby mode is immediate. If the device was previously in Deep
Power-down mode, there's a delay of tRES2 to transit to standby mode, and CS# must remain to high at least
tRES2(max). Once in the standby mode, the device waits to be selected, so it can be receive, decode, and execute
instruction.
Figure 19. Read Electronic Signature (RES) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38
SCLK
Mode 0
Command
SI
ABh
tRES2
3 Dummy Bytes
23 22 21
3
2
1
0
MSB
SO
Electronic Signature Out
High-Z
7
6
5
4
3
2
1
0
MSB
Deep Power-down Mode
P/N: PM2006
28
Stand-by Mode
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 20. Read Electronic Signature (RES) Sequence (QPI Mode)
CS#
MODE 3
0
1
2
3
4
5
6
7
SCLK
MODE 0
3 Dummy Bytes
Command
SIO[3:0]
X
ABh
X
X
X
X
X
H0
L0
MSB LSB
Data In
Data Out
Stand-by Mode
Deep Power-down Mode
Figure 21. Release from Deep Power-down (RDP) Sequence (SPI Mode)
CS#
0
Mode 3
1
2
3
4
5
6
tRES1
7
SCLK
Mode 0
Command
SI
ABh
High-Z
SO
Deep Power-down Mode
Stand-by Mode
Figure 22. Release from Deep Power-down (RDP) Sequence (QPI Mode)
CS#
Mode 3
tRES1
0
1
SCLK
Mode 0
Command
SIO[3:0]
ABh
Deep Power-down Mode
P/N: PM2006
29
Stand-by Mode
Rev. 1.6, July 27, 2017
MX25L51245G
9-6. Read Electronic Manufacturer ID & Device ID (REMS)
The REMS instruction returns both the JEDEC assigned manufacturer ID and the device ID. The Device ID values
are listed in "Table 6. ID Definitions".
The REMS instruction is initiated by driving the CS# pin low and sending the instruction code "90h" followed by two
dummy bytes and one address byte (A7~A0). After which the manufacturer ID for Macronix (C2h) and the device
ID are shifted out on the falling edge of SCLK with the most significant bit (MSB) first. If the address byte is 00h,
the manufacturer ID will be output first, followed by the device ID. If the address byte is 01h, then the device ID will
be output first, followed by the manufacturer ID. While CS# is low, the manufacturer and device IDs can be read
continuously, alternating from one to the other. The instruction is completed by driving CS# high.
Figure 23. Read Electronic Manufacturer & Device ID (REMS) Sequence (SPI Mode only)
CS#
SCLK
Mode 3
0
1
2
Mode 0
3
4
5
6
7
8
Command
SI
9 10
2 Dummy Bytes
15 14 13
90h
3
2
1
0
High-Z
SO
CS#
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
ADD (1)
SI
7
6
5
4
3
2
1
0
Manufacturer ID
SO
7
6
5
4
3
2
1
Device ID
0
7
6
5
4
3
2
MSB
MSB
1
0
7
MSB
Notes:
(1) ADD=00H will output the manufacturer's ID first and ADD=01H will output device ID first.
P/N: PM2006
30
Rev. 1.6, July 27, 2017
MX25L51245G
9-7. QPI ID Read (QPIID)
User can execute this QPIID Read instruction to identify the Device ID and Manufacturer ID. The sequence of issue
QPIID instruction is CS# goes low→sending QPI ID instruction→Data out on SO→CS# goes high. Most significant
bit (MSB) first.
After the command cycle, the device will immediately output data on the falling edge of SCLK. The manufacturer ID,
memory type, and device ID data byte will be output continuously, until the CS# goes high.
Table 6. ID Definitions
Command Type
RDID
9Fh
RES
ABh
REMS
90h
QPIID
AFh
P/N: PM2006
MX25L51245G
Manufacturer ID
C2
Manufacturer ID
C2
Manufacturer ID
C2
Memory type
20
Electronic ID
19
Device ID
19
Memory type
20
31
Memory density
1A
Memory density
1A
Rev. 1.6, July 27, 2017
MX25L51245G
9-8. Read Status Register (RDSR)
The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even
in program/erase/write status register condition). It is recommended to check the Write in Progress (WIP) bit before
sending a new instruction when a program, erase, or write status register operation is in progress.
The sequence of issuing RDSR instruction is: CS# goes low→ sending RDSR instruction code→ Status Register data
out on SO.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Figure 24. Read Status Register (RDSR) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
command
05h
SI
SO
Status Register Out
High-Z
7
6
5
4
3
2
1
Status Register Out
0
7
6
5
4
3
2
1
0
7
MSB
MSB
Figure 25. Read Status Register (RDSR) Sequence (QPI Mode)
CS#
Mode 3 0
1
2
3
4
5
6
7
N
SCLK
Mode 0
SIO[3:0]
05h H0 L0 H0 L0 H0 L0
H0 L0
MSB LSB
Status Byte Status Byte Status Byte
P/N: PM2006
32
Status Byte
Rev. 1.6, July 27, 2017
MX25L51245G
9-9. Read Configuration Register (RDCR)
The RDCR instruction is for reading Configuration Register Bits. The Read Configuration Register can be read at
any time (even in program/erase/write configuration register condition). It is recommended to check the Write in
Progress (WIP) bit before sending a new instruction when a program, erase, or write configuration register operation
is in progress.
The sequence of issuing RDCR instruction is: CS# goes low→ sending RDCR instruction code→ Configuration
Register data out on SO.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Figure 26. Read Configuration Register (RDCR) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
command
15h
SI
SO
Configuration register Out
High-Z
7
6
5
4
3
2
1
0
Configuration register Out
7
6
5
4
3
2
1
0
7
MSB
MSB
Figure 27. Read Configuration Register (RDCR) Sequence (QPI Mode)
CS#
Mode 3 0
1
2
3
4
5
6
7
N
SCLK
Mode 0
SIO[3:0]
15h H0 L0 H0 L0 H0 L0
H0 L0
MSB LSB
Config. Byte Config. Byte Config. Byte
P/N: PM2006
33
Config. Byte
Rev. 1.6, July 27, 2017
MX25L51245G
For user to check if Program/Erase operation is finished or not, RDSR instruction flow are shown as follows:
Figure 28. Program/Erase flow with read array data
start
WREN command
RDSR command*
WEL=1?
No
Yes
Program/erase command
Write program data/address
(Write erase address)
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
Read array data
(same address of PGM/ERS)
No
Verify OK?
Yes
Program/erase successfully
Program/erase
another block?
No
Program/erase fail
Yes
* Issue RDSR to check BP[3:0].
* If WPSEL = 1, issue RDSPB and RDDPB to check the block status.
Program/erase completed
P/N: PM2006
34
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 29. Program/Erase flow without read array data (read P_FAIL/E_FAIL flag)
start
WREN command
RDSR command*
WEL=1?
No
Yes
Program/erase command
Write program data/address
(Write erase address)
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
RDSCUR command
Yes
P_FAIL/E_FAIL =1 ?
No
Program/erase fail
Program/erase successfully
Program/erase
another block?
No
Yes
* Issue RDSR to check BP[3:0].
* If WPSEL = 1, issue RDSPB and RDDPB to check the block status.
Program/erase completed
P/N: PM2006
35
Rev. 1.6, July 27, 2017
MX25L51245G
Status Register
The definition of the status register bits is as below:
WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write
status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status
register progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/write status
register cycle.
WEL bit. The Write Enable Latch (WEL) bit, a volatile bit, indicates whether the device is set to internal write enable
latch. When WEL bit sets to 1, which means the internal write enable latch is set, the device can accept program/
erase/write status register instruction. When WEL bit sets to 0, which means no internal write enable latch; the
device will not accept program/erase/write status register instruction. The program/erase command will be ignored
if it is applied to a protected memory area. To ensure both WIP bit & WEL bit are both set to 0 and available for next
program/erase/operations, WIP bit needs to be confirm to be 0 before polling WEL bit. After WIP bit confirmed, WEL
bit needs to be confirm to be 0.
BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits, non-volatile bits, indicate the protected area
(as defined in Table 2) of the device to against the program/erase instruction without hardware protection mode being
set. To write the Block Protect (BP3, BP2, BP1, BP0) bits requires the Write Status Register (WRSR) instruction to
be executed. Those bits define the protected area of the memory to against Page Program (PP), Sector Erase (SE),
Block Erase 32KB (BE32K), Block Erase (BE) and Chip Erase (CE) instructions (only if Block Protect bits (BP3:BP0)
set to 0, the CE instruction can be executed). The BP3, BP2, BP1, BP0 bits are "0" as default. Which is un-protected.
QE bit. The Quad Enable (QE) bit, non-volatile bit, while it is "0" (factory default), it performs non-Quad and WP#,
RESET# are enabled. While QE is "1", it performs Quad I/O mode and WP#, RESET# (of the RESET#/SIO3 of
8-pin package) are disabled. In the other word, if the system goes into four I/O mode (QE=1), the feature of HPM
and RESET (in the 8-pin package of RESET#/SIO3) will be disabled.
SRWD bit. The Status Register Write Disable (SRWD) bit, non-volatile bit, is operated together with Write Protection
(WP#/SIO2) pin for providing hardware protection mode. The hardware protection mode requires SRWD sets to 1 and
WP#/SIO2 pin signal is low stage. In the hardware protection mode, the Write Status Register (WRSR) instruction is
no longer accepted for execution and the SRWD bit and Block Protect bits (BP3, BP2, BP1, BP0) are read only. The
SRWD bit defaults to be "0".
Status Register
bit7
SRWD (status
register write
protect)
bit6
QE
(Quad
Enable)
1=status
register write
1=Quad
disabled
Enable
0=status
0=not Quad
Enable
register write
enabled
Non-volatile
bit
Non-volatile
bit
bit5
BP3
(level of
protected
block)
bit4
BP2
(level of
protected
block)
bit3
BP1
(level of
protected
block)
bit2
BP0
(level of
protected
block)
(note 1)
(note 1)
(note 1)
(note 1)
Non-volatile
bit
Non-volatile
bit
Non-volatile
bit
Non-volatile
bit
bit1
bit0
WEL
WIP
(write enable
(write in
latch)
progress bit)
1=write
1=write
enable
operation
0=not write 0=not in write
enable
operation
volatile bit
volatile bit
Note 1: Please refer to the Table 2 "Protected Area Size".
P/N: PM2006
36
Rev. 1.6, July 27, 2017
MX25L51245G
Configuration Register
The Configuration Register is able to change the default status of Flash memory. Flash memory will be configured
after the CR bit is set.
ODS bit
The output driver strength (ODS2, ODS1, ODS0) bits are volatile bits, which indicate the output driver level (as
defined in Output Driver Strength Table) of the device. The Output Driver Strength is defaulted as 30 Ohms when
delivered from factory. To write the ODS bits requires the Write Status Register (WRSR) instruction to be executed.
TB bit
The Top/Bottom (TB) bit is a non-volatile OTP bit. The Top/Bottom (TB) bit is used to configure the Block Protect
area by BP bit (BP3, BP2, BP1, BP0), starting from TOP or Bottom of the memory array. The TB bit is defaulted as
“0”, which means Top area protect. When it is set as “1”, the protect area will change to Bottom area of the memory
device. To write the TB bits requires the Write Status Register (WRSR) instruction to be executed.
PBE bit
The Preamble Bit Enable (PBE) bit is a volatile bit. It is used to enable or disable the preamble bit data pattern
output on dummy cycles. The PBE bit is defaulted as “0”, which means preamble bit is disabled. When it is set as “1”,
the preamble bit will be enabled, and inputted into dummy cycles. To write the PBE bits requires the Write Status
Register (WRSR) instruction to be executed.
4BYTE Indicator bit
By writing EN4B instruction, the 4BYTE bit may be set as "1" to access the address length of 32-bit for memory area
of higher density (large than 128Mb). The default state is "0" as the 24-bit address mode. The 4BYTE bit may be
cleared by power-off or writing EX4B instruction to reset the state to be "0".
Configuration Register
bit7
DC1
(Dummy
cycle 1)
bit6
DC0
(Dummy
cycle 0)
(note 2)
(note 2)
volatile bit
volatile bit
bit5
4 BYTE
0=3-byte
address
mode
1=4-byte
address
mode
(Default=0)
volatile bit
bit4
bit3
bit2
bit1
bit0
PBE
TB
ODS 2
ODS 1
ODS 0
(Preamble bit (top/bottom (output driver (output driver (output driver
Enable)
selected)
strength)
strength)
strength)
0=Disable
1=Enable
0=Top area
protect
1=Bottom
area protect
(Default=0)
(note 1)
(note 1)
(note 1)
OTP
volatile bit
volatile bit
volatile bit
volatile bit
Note 1: see "Output Driver Strength Table"
Note 2: see "Dummy Cycle and Frequency Table (MHz)"
P/N: PM2006
37
Rev. 1.6, July 27, 2017
MX25L51245G
Output Driver Strength Table
ODS2
0
0
0
0
1
1
1
1
ODS1
0
0
1
1
0
0
1
1
ODS0
0
1
0
1
0
1
0
1
Description
Reserved
90 Ohms
60 Ohms
45 Ohms
Reserved
20 Ohms
15 Ohms
30 Ohms (Default)
Note
Impedance at VCC/2
Dummy Cycle and Frequency Table (MHz)
DC[1:0]
00 (default)
01
10
11
DC[1:0]
00 (default)
01
10
11
DC[1:0]
00 (default)
01
10
11
P/N: PM2006
Numbers of
Dummy clock
cycles
8
6
8
10
Numbers of
Dummy clock
cycles
4
6
8
10
Numbers of
Dummy clock
cycles
6
4
8
10
Fast Read
Dual Output Fast
Read
Quad Output
Fast Read
Fast DTR
Read
133
133
133
166
133
133
133
166
133
104
133
166
66
66
66
83
Dual IO Fast
Read
Dual I/O DTR
84
104
133
166
52
66
66
83
Quad IO Fast
Read
Quad I/O DTR
Read
84
70
104
133
52
42
66
100
Read
38
Rev. 1.6, July 27, 2017
MX25L51245G
9-10. Write Status Register (WRSR)
The WRSR instruction is for changing the values of Status Register Bits and Configuration Register Bits. Before
sending WRSR instruction, the Write Enable (WREN) instruction must be decoded and executed to set the Write
Enable Latch (WEL) bit in advance. The WRSR instruction can change the value of Block Protect (BP3, BP2, BP1,
BP0) bits to define the protected area of memory (as shown in Table 2). The WRSR also can set or reset the Quad
enable (QE) bit and set or reset the Status Register Write Disable (SRWD) bit in accordance with Write Protection (WP#/
SIO2) pin signal, but has no effect on bit1(WEL) and bit0 (WIP) of the status register. The WRSR instruction cannot
be executed once the Hardware Protected Mode (HPM) is entered.
The sequence of issuing WRSR instruction is: CS# goes low→ sending WRSR instruction code→ Status Register
data on SI→CS# goes high.
The CS# must go high exactly at the 8 bits or 16 bits data boundary; otherwise, the instruction will be rejected and
not executed. The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes
high. The Write in Progress (WIP) bit still can be check out during the Write Status Register cycle is in progress.
The WIP sets 1 during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the Write
Enable Latch (WEL) bit is reset.
Figure 30. Write Status Register (WRSR) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCLK
Mode 0
SI
SO
command
01h
Status
Register In
7
6
4
5
Configuration
Register In
2
3
0 15 14 13 12 11 10 9
1
8
MSB
High-Z
Note : The CS# must go high exactly at 8 bits or 16 bits data boundary to completed the write register command.
Figure 31. Write Status Register (WRSR) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
Mode 3
SCLK
Mode 0
Mode 0
SR in
Command
SIO[3:0]
P/N: PM2006
01h
H0
39
L0
CR in
H1
L1
Rev. 1.6, July 27, 2017
MX25L51245G
Software Protected Mode (SPM):
- When SRWD bit=0, no matter WP#/SIO2 is low or high, the WREN instruction may set the WEL bit and can
change the values of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1,
BP0 and T/B bit, is at software protected mode (SPM).
- When SRWD bit=1 and WP#/SIO2 is high, the WREN instruction may set the WEL bit can change the values
of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1, BP0 and T/B bit, is at
software protected mode (SPM)
Note:
If SRWD bit=1 but WP#/SIO2 is low, it is impossible to write the Status Register even if the WEL bit has previously
been set. It is rejected to write the Status Register and not be executed.
Hardware Protected Mode (HPM):
- When SRWD bit=1, and then WP#/SIO2 is low (or WP#/SIO2 is low before SRWD bit=1), it enters the hardware
protected mode (HPM). The data of the protected area is protected by software protected mode by BP3, BP2,
BP1, BP0 and T/B bit and hardware protected mode by the WP#/SIO2 to against data modification.
Note:
To exit the hardware protected mode requires WP#/SIO2 driving high once the hardware protected mode is entered.
If the WP#/SIO2 pin is permanently connected to high, the hardware protected mode can never be entered; only
can use software protected mode via BP3, BP2, BP1, BP0 and T/B bit.
If the system enter QPI or set QE=1, the feature of HPM will be disabled.
Table 7. Protection Modes
Mode
Software protection
mode (SPM)
Hardware protection
mode (HPM)
Status register condition
WP# and SRWD bit status
Memory
Status register can be written
in (WEL bit is set to "1") and
the SRWD, BP0-BP3
bits can be changed
WP#=1 and SRWD bit=0, or
WP#=0 and SRWD bit=0, or
WP#=1 and SRWD=1
The protected area
cannot
be program or erase.
The SRWD, BP0-BP3 of
status register bits cannot be
changed
WP#=0, SRWD bit=1
The protected area
cannot
be program or erase.
Note:
1. As defined by the values in the Block Protect (BP3, BP2, BP1, BP0) bits of the Status Register, as shown in
Table 2.
P/N: PM2006
40
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 32. WRSR flow
start
WREN command
RDSR command
WEL=1?
No
Yes
WRSR command
Write status register data
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
Verify OK?
No
Yes
WRSR successfully
P/N: PM2006
WRSR fail
41
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 33. WP# Setup Timing and Hold Timing during WRSR when SRWD=1
WP#
tSHWL
tWHSL
CS#
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCLK
01h
SI
SO
High-Z
Note: WP# must be kept high until the embedded operation finish.
P/N: PM2006
42
Rev. 1.6, July 27, 2017
MX25L51245G
9-11. Enter 4-byte mode (EN4B)
The EN4B instruction enables accessing the address length of 32-bit for the memory area of higher density (larger
than 128Mb). The device default is in 24-bit address mode; after sending out the EN4B instruction, the Bit5 (4BYTE
bit) of Configuration Register will be automatically set to "1" to indicate the 4-byte address mode has been enabled.
Once the 4-byte address mode is enabled, the address length becomes 32-bit instead of the default 24-bit. There
are three methods to exit the 4-byte mode: writing exit 4-byte mode (EX4B) instruction, Reset or power-off.
All instructions are accepted normally, and just the address bit is changed from 24-bit to 32-bit.
The following command don't support 4-byte address: RDSFDP, RES and REMS.
The sequence of issuing EN4B instruction is: CS# goes low → sending EN4B instruction to enter 4-byte mode(
automatically set 4BYTE bit as "1") → CS# goes high.
9-12. Exit 4-byte mode (EX4B)
The EX4B instruction is executed to exit the 4-byte address mode and return to the default 3-bytes address mode.
After sending out the EX4B instruction, the Bit5 (4BYTE bit) of Configuration Register will be cleared to be "0" to
indicate the exit of the 4-byte address mode. Once exiting the 4-byte address mode, the address length will return to
24-bit.
The sequence of issuing EX4B instruction is: CS# goes low → sending EX4B instruction to exit 4-byte mode
(automatically clear the 4BYTE bit to be "0") → CS# goes high.
P/N: PM2006
43
Rev. 1.6, July 27, 2017
MX25L51245G
9-13. Read Data Bytes (READ)
The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on
the falling edge of SCLK at a maximum frequency fR. The first address byte can be at any location. The address
is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can
be read out at a single READ instruction. The address counter rolls over to 0 when the highest address has been
reached.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
The sequence of issuing READ instruction is: CS# goes low→sending READ instruction code→ 3-byte or 4-byte
address on SI→ data out on SO→to end READ operation can use CS# to high at any time during data out.
Figure 34. Read Data Bytes (READ) Sequence (SPI Mode only)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Mode 0
SI
command
03h
24-Bit Address
(Note)
23 22 21
3
2
1
0
MSB
SO
Data Out 1
High-Z
7
6
5
4
3
2
Data Out 2
1
0
7
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM2006
44
Rev. 1.6, July 27, 2017
MX25L51245G
9-14. Read Data Bytes at Higher Speed (FAST_READ)
The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and
data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address byte can be at
any location. The address is automatically increased to the next higher address after each byte data is shifted out,
so the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when
the highest address has been reached.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
Read on SPI Mode The sequence of issuing FAST_READ instruction is: CS# goes low→ sending FAST_READ
instruction code→ 3-byte or 4-byte address on SI→ 8 dummy cycles (default)→ data out on SO→ to end FAST_
READ operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any
impact on the Program/Erase/Write Status Register current cycle.
Figure 35. Read at Higher Speed (FAST_READ) Sequence (SPI Mode)
CS#
SCLK
Mode 3
0
1
2
Mode 0
3
5
6
7
8
9 10
Command
SI
SO
4
28 29 30 31
24-Bit Address
(Note)
23 22 21
0Bh
3
2
1
0
High-Z
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Configurable
Dummy Cycle
SI
7
6
5
4
3
2
1
0
DATA OUT 2
DATA OUT 1
SO
7
6
5
4
3
2
1
0
7
MSB
MSB
6
5
4
3
2
1
0
7
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM2006
45
Rev. 1.6, July 27, 2017
MX25L51245G
9-15. Dual Output Read Mode (DREAD)
The DREAD instruction enable double throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a
maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the
next higher address after each byte data is shifted out, so the whole memory can be read out at a single DREAD
instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing DREAD
instruction, the following data out will perform as 2-bit instead of previous 1-bit.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
The sequence of issuing DREAD instruction is: CS# goes low→ sending DREAD instruction→3-byte or 4-byte
address on SIO0→ 8 dummy cycles (default) on SIO0→ data out interleave on SIO1 & SIO0→ to end DREAD
operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, DREAD instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 36. Dual Read Mode Sequence
CS#
0
1
2
3
4
5
6
7
8
…
Command
SI/SIO0
SO/SIO1
30 31 32
9
SCLK
3B
…
24 ADD Cycle
A23 A22
…
39 40 41 42 43 44 45
A1 A0
High Impedance
Configurable
Dummy Cycle
Data Out
1
Data Out
2
D6 D4 D2 D0 D6 D4
D7 D5 D3 D1 D7 D5
Notes:
1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address
cycles will be increased.
2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in
configuration register.
P/N: PM2006
46
Rev. 1.6, July 27, 2017
MX25L51245G
9-16. 2 x I/O Read Mode (2READ)
The 2READ instruction enable double throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a
maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the
next higher address after each byte data is shifted out, so the whole memory can be read out at a single 2READ
instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 2READ
instruction, the following address/dummy/data out will perform as 2-bit instead of previous 1-bit.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
The sequence of issuing 2READ instruction is: CS# goes low→ sending 2READ instruction→ 3-byte or 4-byte
address interleave on SIO1 & SIO0→ 4 dummy cycles (default) on SIO1 & SIO0→ data out interleave on SIO1 &
SIO0→ to end 2READ operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, 2READ instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 37. 2 x I/O Read Mode Sequence (SPI Mode only)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
17 18 19 20 21 22 23 24 25 26 27 28 29 30
Mode 3
SCLK
Mode 0
Command
SI/SIO0
SO/SIO1
BBh
12 ADD Cycles
(Note)
Configurable
Dummy Cycle
Data
Out 1
Data
Out 2
A22 A20 A18
A4 A2 A0
D6 D4 D2 D0 D6 D4 D2 D0
A23 A21 A19
A5 A3 A1
D7 D5 D3 D1 D7 D5 D3 D1
Mode 0
Notes:
1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address
cycles will be increased.
2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in
configuration register.
P/N: PM2006
47
Rev. 1.6, July 27, 2017
MX25L51245G
9-17. Quad Read Mode (QREAD)
The QREAD instruction enable quad throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a
maximum frequency fQ. The first address byte can be at any location. The address is automatically increased to the
next higher address after each byte data is shifted out, so the whole memory can be read out at a single QREAD
instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing QREAD
instruction, the following data out will perform as 4-bit instead of previous 1-bit.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
The sequence of issuing QREAD instruction is: CS# goes low→ sending QREAD instruction → 3-byte or 4-byte
address on SI → 8 dummy cycle (Default) → data out interleave on SIO3, SIO2, SIO1 & SIO0→ to end QREAD
operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, QREAD instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 38. Quad Read Mode Sequence
CS#
0
1
2
3
4
5
6
7
8
…
Command
SIO0
SIO1
SIO2
SIO3
29 30 31 32 33
9
SCLK
6B
…
24 ADD Cycles
A23 A22
…
High Impedance
38 39 40 41 42
A2 A1 A0
Configurable
dummy cycles
Data Data Data
Out 1 Out 2 Out 3
D4 D0 D4 D0 D4
D5 D1 D5 D1 D5
High Impedance
D6 D2 D6 D2 D6
High Impedance
D7 D3 D7 D3 D7
Notes:
1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address
cycles will be increased.
2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in
configuration register.
P/N: PM2006
48
Rev. 1.6, July 27, 2017
MX25L51245G
9-18. 4 x I/O Read Mode (4READ)
The 4READ instruction enable quad throughput of Serial Flash in read mode. A Quad Enable (QE) bit of status
Register must be set to "1" before sending the 4READ instruction. The address is latched on rising edge of SCLK,
and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency
fQ. The first address byte can be at any location. The address is automatically increased to the next higher address
after each byte data is shifted out, so the whole memory can be read out at a single 4READ instruction. The address
counter rolls over to 0 when the highest address has been reached. Once writing 4READ instruction, the following
address/dummy/data out will perform as 4-bit instead of previous 1-bit.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B)
Mode section.
4 x I/O Read on SPI Mode (4READ) The sequence of issuing 4READ instruction is: CS# goes low→ sending
4READ instruction→ 3-byte or 4-byte address interleave on SIO3, SIO2, SIO1 & SIO0→ 6 dummy cycles (Default)
→data out interleave on SIO3, SIO2, SIO1 & SIO0→ to end 4READ operation can use CS# to high at any time
during data out.
4 x I/O Read on QPI Mode (4READ) The 4READ instruction also support on QPI command mode. The sequence
of issuing 4READ instruction QPI mode is: CS# goes low→ sending 4READ instruction→ 3-byte or 4-byte address
interleave on SIO3, SIO2, SIO1 & SIO0→ 6 dummy cycles (Default) →data out interleave on SIO3, SIO2, SIO1 &
SIO0→ to end 4READ operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, 4READ instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
P/N: PM2006
49
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 39. 4 x I/O Read Mode Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
Mode 3
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
SCLK
Mode 0
Command
6 ADD Cycles
Data
Out 1
Performance
enhance
indicator (Note 1)
Data
Out 2
Data
Out 3
Mode 0
Configurable
Dummy Cycle (Note 3)
EA/EBh
A20 A16 A12 A8 A4 A0 P4 P0
D4 D0 D4 D0 D4 D0
SIO1
A21 A17 A13 A9 A5 A1 P5 P1
D5 D1 D5 D1 D5 D1
SIO2
A22 A18 A14 A10 A6 A2 P6 P2
D6 D2 D6 D2 D6 D2
SIO3
A23 A19 A15 A11 A7 A3 P7 P3
D7 D3 D7 D3 D7 D3
SIO0
Notes:
1. Hi-impedance is inhibited for the two clock cycles.
2. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) is inhibited.
3. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in
configuration register.
4. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
Figure 40. 4 x I/O Read Mode Sequence (QPI Mode)
CS#
MODE 3
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
MODE 3
SCLK
MODE 0
SIO[3:0]
MODE 0
EBh
Data In
A20A23
A16A19
A12A15
A8A11
24-bit Address
(Note)
A4A7
A0A3
X
X
X
X
Configurable
Dummy Cycle
X
X
H0
L0
H1
L1
H2
L2
H3
L3
MSB
Data Out
Notes:
1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address
cycles will be increased.
2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in
configuration register.
P/N: PM2006
50
Rev. 1.6, July 27, 2017
MX25L51245G
9-19. Fast Double Transfer Rate Read (FASTDTRD)
The FASTDTRD instruction is for doubling reading data out, signals are triggered on both rising and falling edge of
clock. The address is latched on both rising and falling edge of SCLK, and data of each bit shifts out on both rising
and falling edge of SCLK. The 2-bit address can be latched-in at one clock, and 2-bit data can be read out at one
clock, which means one bit at rising edge of clock, the other bit at falling edge of clock. The first address byte can
be at any location.
The address is automatically increased to the next higher address after each byte data is shifted out, so the whole
memory can be read out at a single FASTDTRD instruction. The address counter rolls over to 0 when the highest
address has been reached.
The sequence of issuing FASTDTRD instruction is: CS# goes low → sending FASTDTRD instruction code (1bit
per clock) → 3-byte address on SI (2-bit per clock) → 6-dummy clocks (default) on SI → data out on SO (2-bit per
clock) → to end FASTDTRD operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, FASTDTRD instruction is rejected without any
impact on the Program/Erase/Write Status Register current cycle.
Figure 41. Fast DT Read (FASTDTRD) Sequence (SPI Only)
CS#
Mode 3
SCLK
Mode 0
7
0
…
Command
SI/SIO0
8
0Dh
…
…
28
29
30
31
…
Configurable
Dummy Cycle
12 ADD Cycles
A23 A22
27
19
Data Out
1
Data Out
2
A1 A0
D7 D6 D5 D4 D3 D2 D1 D0 D7
SO/SIO1
Notes:
1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address
cycles will be increased.
2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in
configuration register.
P/N: PM2006
51
Rev. 1.6, July 27, 2017
MX25L51245G
9-20. 2 x I/O Double Transfer Rate Read Mode (2DTRD)
The 2DTRD instruction enables Double Transfer Rate throughput on dual I/O of Serial Flash in read mode. The
address (interleave on dual I/O pins) is latched on both rising and falling edge of SCLK, and data (interleave on
dual I/O pins) shift out on both rising and falling edge of SCLK. The 4-bit address can be latched-in at one clock,
and 4-bit data can be read out at one clock, which means two bits at rising edge of clock, the other two bits at falling
edge of clock. The first address byte can be at any location.
The address is automatically increased to the next higher address after each byte data is shifted out, so the whole
memory can be read out at a single 2DTRD instruction. The address counter rolls over to 0 when the highest
address has been reached. Once writing 2DTRD instruction, the following address/dummy/ data out will perform as
4-bit instead of previous 1-bit.
The sequence of issuing 2DTRD instruction is: CS# goes low → sending 2DTRD instruction (1-bit per clock) → 24bit address interleave on SIO1 & SIO0 (4-bit per clock) → 6-bit dummy clocks (Default) on SIO1 & SIO0 → data
out interleave on SIO1 & SIO0 (4-bit per clock) → to end 2DTRD operation can use CS# to high at any time during
data out.
While Program/Erase/Write Status Register cycle is in progress, 2DTRD instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 42. Fast Dual I/O DT Read (2DTRD) Sequence (SPI Only)
CS#
Mode 3
SCLK
Mode 0
SI/SIO0
SO/SIO1
0
7
8
13
…
…
Command
6 ADD Cycles
BDh
14
17
18
19
20
21
…
Configurable
Dummy Cycle
Data Out
1
Data Out
2
…
A22 A20
…
A2 A0
D6 D4 D2 D0 D6 D4 D2 D0 D6
A23 A21
…
A3 A1
D7 D5 D3 D1 D7 D5 D3 D1 D7
Notes:
1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address
cycles will be increased.
2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in
configuration register.
P/N: PM2006
52
Rev. 1.6, July 27, 2017
MX25L51245G
9-21. 4 x I/O Double Transfer Rate Read Mode (4DTRD)
The 4DTRD instruction enables Double Transfer Rate throughput on quad I/O of Serial Flash in read mode. A Quad
Enable (QE) bit of status Register must be set to "1" before sending the 4DTRD instruction. The address (interleave
on 4 I/O pins) is latched on both rising and falling edge of SCLK, and data (interleave on 4 I/O pins) shift out on
both rising and falling edge of SCLK. The 8-bit address can be latched-in at one clock, and 8-bit data can be read
out at one clock, which means four bits at rising edge of clock, the other four bits at falling edge of clock. The first
address byte can be at any location. The address is automatically increased to the next higher address after each
byte data is shifted out, so the whole memory can be read out at a single 4DTRD instruction. The address counter
rolls over to 0 when the highest address has been reached. Once writing 4DTRD instruction, the following address/
dummy/data out will perform as 8-bit instead of previous 1-bit.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
While Program/Erase/Write Status Register cycle is in progress, 4DTRD instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
P/N: PM2006
53
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 43. Fast Quad I/O DT Read (4DTRD) Sequence (SPI Mode)
CS#
Mode 3
0
7
SCLK
8
9
10
11
16
…
Mode 0
17
18
…
Command
Performance
Enhance Indicator
3 ADD Cycles
Configurable
Dummy Cycle
A20 A16
…
A4 A0
P4 P0
D4 D0 D4 D0 D4
SIO1
A21 A17
…
A5 A1
P5 P1
D5 D1 D5 D1 D5
SIO2
A22 A18
…
A6 A2
P6
P2
D6 D2 D6 D2 D6
SIO3
A23 A19
…
A7 A3
P7
P3
D7 D3 D7 D3 D7
SIO0
EDh
Notes:
1. Hi-impedance is inhibited for this clock cycle.
2. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) will result in entering the performance enhance mode.
3. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in
configuration register.
4. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address
cycles will be increased.
Figure 44. Fast Quad I/O DT Read (4DTRD) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
11
10
SCLK
12
…
Mode 0
Command
3 ADD Cycles
Performance
Enhance Indicator
Configurable
Dummy Cycle
SIO[3:0]
EDh
A20
|
A23
A16
|
A19
A12
|
A15
A8
|
A11
A4
|
A7
A0
|
A3
P1
P0
H0
L0
H1
L1
H2
Notes:
1. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address
cycles will be increased.
2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in
configuration register.
P/N: PM2006
54
Rev. 1.6, July 27, 2017
MX25L51245G
9-22. Preamble Bit
The Preamble Bit data pattern supports system/memory controller to determine valid window of data output more
easily and improve data capture reliability while the flash memory is running in high frequency.
Preamble Bit data pattern can be enabled or disabled by setting the bit4 of Configuration register (Preamble bit
Enable bit). Once the CR is set, the preamble bit is inputted into dummy cycles.
Enabling preamble bit will not affect the function of enhance mode bit. In Dummy cycles, performance enhance
mode bit still operates with the same function. Preamble bit will output after performance enhance mode bit.
The preamble bit is a fixed 8-bit data pattern (00110100). While dummy cycle number reaches 10, the complete
8 bits will start to output right after the performance enhance mode bit. While dummy cycle is not sufficient of 10
cycles, the rest of the preamble bits will be cut. For example, 8 dummy cycles will cause 6 preamble bits to output,
and 6 dummy cycles will cause 4 preamble bits to output.
Figure 45. SDR 1I/O (10DC)
CS#
SCLK
…
…
Dummy cycle
Command
cycle
SI
CMD
Address cycle
An
…
Preamble bits
A0
SO
7
6
5
4
3
2
1
0
D7
D6
D7
D6
…
Figure 46. SDR 1I/O (8DC)
CS#
SCLK
…
…
Dummy cycle
Command
cycle
SI
SO
P/N: PM2006
CMD
Address cycle
An
…
Preamble bits
A0
7
55
6
5
4
3
2
D5
D4
…
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 47. SDR 2I/O (10DC)
CS#
SCLK
…
…
Dummy cycle
Command
cycle
SIO0
CMD
SIO1
Address cycle
Toggle
bits
Preamble bits
A(n-1)
…
A0
7
6
5
4
3
2
1
0
D6
D4
D2
D0
An
…
A1
7
6
5
4
3
2
1
0
D7
D5
D3
D1
…
…
Figure 48. SDR 2I/O (8DC)
CS#
SCLK
…
…
Dummy cycle
Command
cycle
SIO0
SIO1
P/N: PM2006
CMD
Address cycle
Toggle
bits
Preamble bits
A(n-1)
…
A0
7
6
5
4
3
2
D6
D4
D2
D0
An
…
A1
7
6
5
4
3
2
D7
D5
D3
D1
56
…
…
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 49. SDR 4I/O (10DC)
CS#
SCLK
…
…
Dummy cycle
Command
cycle
Toggle
bits
Address cycle
Preamble bits
A(n-3)
…
A0
7
6
5
4
3
2
1
0
D4
D0
SIO1
A(n-2)
…
A1
7
6
5
4
3
2
1
0
D5
D1
SIO2
A(n-1)
…
A2
7
6
5
4
3
2
1
0
D6
D2
…
SIO3
An
…
A3
7
6
5
4
3
2
1
0
D7
D3
…
SIO0
CMD
…
…
Figure 50. SDR 4I/O (8DC)
CS#
SCLK
…
…
Dummy cycle
Command
cycle
Address cycle
Toggle
bits
Preamble bits
A(n-3)
…
A0
7
6
5
4
3
2
D4
D0
SIO1
A(n-2)
…
A1
7
6
5
4
3
2
D5
D1
SIO2
A(n-1)
…
A2
7
6
5
4
3
2
D6
D2
SIO3
An
…
A3
7
6
5
4
3
2
D7
D3
SIO0
P/N: PM2006
CMD
57
…
…
…
…
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 51. DTR1IO (8DC)
CS#
SCLK
…
…
Dummy cycle
Command
cycle
SI
CMD
Preamble bits
Address cycle
…
An
A1 A0
7 6 5 4 3 2 1 0 7 6 5 4
D7 D6 D5 D4 D3 D2 D1 D0
SO
…
Figure 52. DTR2IO (6DC)
CS#
SCLK
…
…
Dummy cycle
Command
cycle
SIO0
Address cycle
CMD
Toggle
Bits
Preamble bits
…
A2 A0
7 6 5 4 3 2 1 0 D6 D4 D2 D0 D6 D4 D2 D0
…
…
A3 A1
7 6 5 4 3 2 1 0 D7 D5 D3 D1 D7 D5 D3 D1
…
A(n-1)
SIO1
An
P/N: PM2006
58
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 53. DTR2IO (8DC)
CS#
SCLK
…
…
Dummy cycle
Command
cycle
SIO0
Address cycle
CMD
Preamble bits
Toggle
Bits
…
A2 A0
7 6 5 4 3 2 1 0 7 6 5 4 D6 D4 D2 D0 D6 D4
…
…
A3 A1
7 6 5 4 3 2 1 0 7 6 5 4 D7 D5 D3 D1 D7 D5
…
A(n-1)
SIO1
An
Figure 54. DTR4IO (DC=6)
CS#
SCLK
…
…
Dummy cycle
Command
cycle
SIO0
Address cycle
CMD
Toggle
Bits
Preamble bits
…
A0
7 6 5 4 3 2 1 0 D4 D0 D4 D0 D4 D0 D4 D0
…
…
A1
7 6 5 4 3 2 1 0 D5 D1 D5 D1 D5 D1 D5 D1
…
…
A2
7 6 5 4 3 2 1 0 D6 D2 D6 D2 D6 D2 D6 D2
…
…
A3
7 6 5 4 3 2 1 0 D7 D3 D7 D3 D7 D3 D7 D3
…
A(n-3)
SIO1
A(n-2)
SIO2
A(n-1)
SIO3
An
P/N: PM2006
59
Rev. 1.6, July 27, 2017
MX25L51245G
9-23. 4 Byte Address Command Set
The operation of 4-byte address command set was very similar to original 3-byte address command set. The
only different is all the 4-byte command set request 4-byte address (A31-A0) followed by instruction code. The
command set support 4-byte address including: READ4B, Fast_Read4B, DREAD4B, 2READ4B, QREAD4B,
4READ4B, FRDTRD4B, 2DTRD4B, 4DTRD4B, PP4B, 4PP4B, SE4B, BE32K4B, BE4B. Please note that it is not
necessary to issue EN4B command before issuing any of 4-byte command set.
Figure 55. Read Data Bytes using 4 Byte Address Sequence (READ4B)
CS#
0
1
2
3
4
5
6
7
8
36 37 38 39 40 41 42 43 44 45 46 47
9 10
SCLK
Command
32-bit address
31 30 29
13h
SI
3
2
1
0
MSB
Data Out 1
High Impedance
SO
7
6
5
4
Data Out 2
2
3
1
0
7
MSB
Figure 56. Read Data Bytes at Higher Speed using 4 Byte Address Sequence (FASTREAD4B)
CS#
0
1
2
3
4
5
6
7
8
9 10
36 37 38 39
SCLK
Command
32-bit address
31 30 29
0Ch
SI
3
2
1
0
High Impedance
SO
CS#
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
SCLK
Configurable
Dummy cycles
SI
7
6
5
4
3
2
1
0
DATA OUT 2
DATA OUT 1
SO
7
6
5
4
MSB
3
2
1
0
7
6
MSB
5
4
3
2
1
0
7
MSB
Note:
1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in
configuration register.
P/N: PM2006
60
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 57. 2 x I/O Fast Read using 4 Byte Address Sequence (2READ4B)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
21 22 23 24 25 26 27 28 29 30 31 32 33 34
Mode 3
SCLK
Mode 0
BCh
SI/SIO0
SO/SIO1
Data
Out 1
Configurable
Dummy Cycle
16 ADD Cycles
Command
Mode 0
Data
Out 2
A30 A28 A26
A4 A2 A0
D6 D4 D2 D0 D6 D4 D2 D0
A31 A29 A27
A5 A3 A1
D7 D5 D3 D1 D7 D5 D3 D1
Note:
1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in
configuration register.
Figure 58. 4 I/O Fast Read using 4 Byte Address sequence (4READ4B)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
Mode 3
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
SCLK
Mode 0
Command
8 ADD Cycles
Performance
enhance
indicator
Data
Out 1
Data
Out 2
Data
Out 3
Mode 0
Configurable
Dummy Cycle
SIO0
ECh
A28 A24 A20 A16 A12 A8 A4 A0 P4 P0
D4 D0 D4 D0 D4 D0
SIO1
A29 A25 A21 A17 A13 A9 A5 A1 P5 P1
D5 D1 D5 D1 D5 D1
SIO2
A30 A26 A22 A18 A14 A10 A6 A2 P6 P2
D6 D2 D6 D2 D6 D2
SIO3
A31 A27 A23 A19 A15 A11 A7 A3 P7 P3
D7 D3 D7 D3 D7 D3
Note:
1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in
configuration register.
P/N: PM2006
61
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 59. Fast DT Read (FRDTRD4B) Sequence (SPI Only)
CS#
Mode 3
SCLK
8
7
0
…
Mode 0
…
Command
…
A31 A30
32
33
34
35
…
Configurable
Dummy Cycle
16 ADD Cycles
0Eh
SI/SIO0
31
23
Data Out
2
Data Out
1
A1 A0
D7 D6 D5 D4 D3 D2 D1 D0 D7
SO/SIO1
Note:
1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in
configuration register.
Figure 60. Fast Dual I/O DT Read (2DTRD4B) Sequence (SPI Only)
CS#
Mode 3
SCLK
Mode 0
0
7
…
Command
SI/SIO0
SO/SIO1
8
BEh
15
16
…
19
20
21
22
23
…
Configurable
Dummy Cycle
8 ADD Cycles
Data Out
1
Data Out
2
…
A30 A28
…
A2 A0
D6 D4 D2 D0 D6 D4 D2 D0
A31 A29
…
A3
D7 D5 D3 D1 D7 D5 D3 D1 D7
A1
D6
Note:
1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in
configuration register.
P/N: PM2006
62
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 61. Fast Quad I/O DT Read (4DTRD4B) Sequence (SPI Mode)
CS#
Mode 3
0
7
SCLK
8
9
10
11
12
17
…
Mode 0
18
19
…
Command
Performance
Enhance Indicator
4 ADD Cycles
Configurable
Dummy Cycle
A28 A24
…
A4
A0
P4
P0
D4 D0 D4 D0 D4
SIO1
A29 A25
…
A5
A1
P5
P1
D5 D1 D5 D1 D5
SIO2
A30 A26
…
A6
A2
P6
P2
D6 D2 D6 D2 D6
SIO3
A31 A27
…
A7
A3
P7
P3
D7 D3 D7 D3 D7
SIO0
EEh
Note:
1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in
configuration register.
Figure 62. Fast Quad I/O DT Read (4DTRD4B) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
4
3
5
6
12
11
SCLK
13
…
Mode 0
Command
4 ADD Cycles
Performance
Enhance Indicator
Configurable
Dummy Cycle
SIO[3:0]
EEh
A28
|
A31
A24
|
A27
A20
|
A23
A16
|
A19
A12
|
A15
A8
|
A11
A4
|
A7
A0
|
A3
P1
P0
H0
L0
H1
L1
H2
Note:
1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in
configuration register.
P/N: PM2006
63
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 63. Sector Erase (SE4B) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
37 38 39
9
SCLK
Mode 0
32-Bit Address
Command
SI
31 30
21h
2
1
0
MSB
Figure 64. Block Erase 32KB (BE32K4B) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
37 38 39
SCLK
Mode 0
Command
SI
32-Bit Address
2
31 30
5Ch
1
0
MSB
Figure 65. Block Erase (BE4B) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
37 38 39
SCLK
Mode 0
SI
Command
32-Bit Address
31 30
DCh
2
1
0
MSB
P/N: PM2006
64
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 66. Page Program (PP4B) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
36 37 38 39 40 41 42 43 44 45 46 47
SCLK
1
0
7
6
5
3
2
1
0
2087
2
2086
3
2085
31 30 29
12h
SI
Data Byte 1
32-Bit Address
2084
Command
2083
Mode 0
4
1
0
MSB
MSB
2082
2081
48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63
2080
CS#
SCLK
Data Byte 2
7
SI
6
5
4
3
Data Byte 3
2
1
0
MSB
7
6
5
4
3
2
Data Byte 256
1
0
MSB
7
6
5
4
3
2
MSB
Figure 67. 4 x I/O Page Program (4PP4B) Sequence (SPI Mode only)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCLK
Mode 0
Data Data Data Data
Byte 2 Byte 3 Byte 4 Byte 4
8 Address cycle
A0
4
0
4
0
4
0
4
0
SIO1
A29 A25 A21 A17 A13 A9 A5 A1
5
1
5
1
5
1
5
1
SIO2
A30 A26 A22 A18 A14 A10 A6 A2
6
2
6
2
6
2
6
2
SIO3
A31 A27 A23 A19 A15 A11 A7 A3
7
3
7
3
7
3
7
3
SIO0
P/N: PM2006
Command
3Eh
A28 A24 A20 A16 A12 A8 A4
65
Rev. 1.6, July 27, 2017
MX25L51245G
9-24. Performance Enhance Mode
The device could waive the command cycle bits if the two cycle bits after address cycle toggles.
Performance enhance mode is supported in both SPI and QPI mode.
In QPI mode, “EBh” "ECh" "EDh" "EEh" and SPI “EBh” "ECh" "EDh" "EEh" commands support enhance mode. The
performance enhance mode is not supported in dual I/O mode.
To enter performance-enhancing mode, P[7:4] must be toggling with P[3:0]; likewise P[7:0]=A5h, 5Ah, F0h or 0Fh
can make this mode continue and skip the next 4READ instruction. To leave enhance mode, P[7:4] is no longer
toggling with P[3:0]; likewise P[7:0]=FFh, 00h, AAh or 55h along with CS# is afterwards raised and then lowered.
Issuing ”FFh” data cycle can also exit enhance mode. The system then will leave performance enhance mode and
return to normal operation.
To conduct the Performance Enhance Mode Reset operation in SPI mode, FFh data cycle(8 clocks in 3-byte
address mode)/3FFh data cycle(10 clocks in 4-byte address mode), should be issued in 1I/O sequence. In QPI
Mode, FFFFFFFFh data cycle(8 clocks in 3-byte address mode)/FFFFFFFFFFh data cycle (10 clocks in 4-byte
address mode), in 4I/O should be issued. If the system controller is being Reset during operation, the flash device
will return to the standard SPI operation.
After entering enhance mode, following CS# go high, the device will stay in the read mode and treat CS# go low of
the first clock as address instead of command cycle.
This sequence of issuing 4READ instruction especially useful in random access: CS# goes low→send 4READ
instruction→3-bytes or 4-bytes address interleave on SIO3, SIO2, SIO1 & SIO0→performance enhance toggling
bit P[7:0]→ 4 dummy cycles (Default) →data out until CS# goes high → CS# goes low (The following 4READ
instruction is not allowed, hence 8 cycles of 4READ can be saved comparing to normal 4READ mode) → 3-bytes or
4-bytes random access address.
P/N: PM2006
66
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 68. 4 x I/O Read Performance Enhance Mode Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
n
SCLK
Mode 0
Data
Out 2
Data
Out n
A20 A16 A12 A8 A4 A0 P4 P0
D4 D0 D4 D0
D4 D0
SIO1
A21 A17 A13 A9 A5 A1 P5 P1
D5 D1 D5 D1
D5 D1
SIO2
A22 A18 A14 A10 A6 A2 P6 P2
D6 D2 D6 D2
D6 D2
SIO3
A23 A19 A15 A11 A7 A3 P7 P3
D7 D3 D7 D3
D7 D3
Command
6 ADD Cycles
(Note 3)
Data
Out 1
Performance
enhance
indicator (Note 1)
Configurable
Dummy Cycle (Note 2)
EBh
SIO0
CS#
n+1
...........
n+7 ...... n+9
........... n+13
...........
Mode 3
SCLK
6 ADD Cycles
(Note 3)
Performance
enhance
indicator (Note 1)
Data
Out 1
Data
Out 2
Data
Out n
Mode 0
Configurable
Dummy Cycle (Note 2)
SIO0
A20 A16 A12 A8 A4 A0 P4 P0
D4 D0 D4 D0
D4 D0
SIO1
A21 A17 A13 A9 A5 A1 P5 P1
D5 D1 D5 D1
D5 D1
SIO2
A22 A18 A14 A10 A6 A2 P6 P2
D6 D2 D6 D2
D6 D2
SIO3
A23 A19 A15 A11 A7 A3 P7 P3
D7 D3 D7 D3
D7 D3
Notes:
1. If not using performance enhance recommend to keep 1 or 0 in performance enhance indicator.
Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF.
2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in
configuration register.
3. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address
cycles will be increased.
P/N: PM2006
67
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 69. 4 x I/O Read Performance Enhance Mode Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
A20A23
A16A19
A12A15
5
6
7
A4A7
A0A3
8
9
10
11
12
13
14
15
16
17
H0
L0
H1
L1
SCLK
Mode 0
SIO[3:0]
EBh
A8A11
X
X
X
X
MSB LSB MSB LSB
P(7:4) P(3:0)
Data In
Data Out
performance
enhance
indicator (Note 3)
Configurable
Dummy Cycle (Note 1)
CS#
n+1
.............
SCLK
Mode 0
SIO[3:0]
A20A23
A16A19
A12A15
A8A11
A4A7
A0A3
X
X
X
6 Address cycles
(Note 2)
X
H0
L0
H1
L1
MSB LSB MSB LSB
P(7:4) P(3:0)
Data Out
performance
enhance
indicator (Note 3)
Configurable
Dummy Cycle (Note 1)
Notes:
1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in
configuration register.
2. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address
cycles will be increased.
3. Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF.
P/N: PM2006
68
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 70. 4 x I/O DT Read Performance Enhance Mode Sequence (SPI Mode)
CS#
Mode 3
SCLK
Mode 0
0
7
8
9
10
11
16
…
17
18
…
Command
n
…
Performance
Enhance Indicator
3 ADD Cycles
Configurable
Dummy Cycle
A20 A16
…
A4 A0
P4 P0
D4 D0 D4 D0
…
D4 D0
SIO1
A21 A17
…
A5 A1
P5 P1
D5 D1 D5 D1
…
D5 D1
SIO2
A22 A18
…
A6 A2
P6 P2
D6 D2 D6 D2
…
D6 D2
SIO3
A23 A19
…
A7 A3
P7
P3
D7 D3 D7 D3
…
D7 D3
SIO0
EDh
CS#
n+1
……
n+4
Mode 3
SCLK
…
3 ADD Cycles
Mode 0
Performance
Enhance Indicator
Configurable
Dummy Cycle
SIO0
A20 A16
…
A4 A0
P4 P0
D4 D0 D4 D0
SIO1
A21 A17
…
A5 A1
P5 P1
D5 D1 D5 D1
SIO2
A22 A18
…
A6 A2
P6 P2
D6 D2 D6 D2
SIO3
A23 A19
…
A7 A3
P7
P3
D7 D3 D7 D3
Notes:
1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in
configuration register.
2. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address
cycles will be increased.
3. Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF.
P/N: PM2006
69
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 71. 4 x I/O DT Read Performance Enhance Mode Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
10
SCLK
11
12
…
Mode 0
Command
3 ADD Cycles
n
…
Performance
Enhance Indicator
Configurable
Dummy Cycle
SIO[3:0]
A20
|
A23
EDh
A16
|
A19
A12
|
A15
A8
|
A11
A0
|
A3
A4
|
A7
P1
P0
H0 L0
H1 L1
…
Hn Ln
CS#
…
n+1
…
n+4
SCLK
Mode 3
…
3 ADD Cycles
Mode 0
Performance
Enhance Indicator
Configurable
Dummy Cycle
SIO[3:0]
A20
|
A23
A16
|
A19
A12
|
A15
A8
|
A11
A4
|
A7
A0
|
A3
P1
P0
H0 L0
H1 L1
Notes:
1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in
configuration register.
2. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address
cycles will be increased.
3. Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF.
P/N: PM2006
70
Rev. 1.6, July 27, 2017
MX25L51245G
9-25. Burst Read
The Burst Read feature allows applications to fill a cache line with a fixed length of data without using multiple read
commands. Burst Read is disabled by default at power-up or reset. Burst Read is enabled by setting the Burst
Length. When the Burst Length is set, reads will wrap on the selected boundary (8/16/32/64-bytes) containing the
initial target address. For example if an 8-byte Wrap Depth is selected, reads will wrap on the 8-byte-page-aligned
boundary containing the initial read address.
To set the Burst Length, drive CS# low → send SET BURST LENGTH instruction code → send WRAP CODE →
drive CS# high. Refer to the table below for valid 8-bit Wrap Codes and their corresponding Wrap Depth.
Data
00h
01h
02h
03h
1xh
Wrap Around
Yes
Yes
Yes
Yes
No
Wrap Depth
8-byte
16-byte
32-byte
64-byte
X
Once Burst Read is enabled, it will remain enabled until the device is power-cycled or reset. The SPI and QPI mode
4READ and 4READ4B read commands support the wrap around feature after Burst Read is enabled. To change
the wrap depth, resend the Burst Read instruction with the appropriate Wrap Code. To disable Burst Read, send the
Burst Read instruction with Wrap Code 1xh. QPI “EBh” "ECh" and SPI “EBh” "ECh" support wrap around feature
after wrap around is enabled. Both SPI (8 clocks) and QPI (2 clocks) command cycle can be accepted by this
instruction. The SIO[3:1] are don't care during SPI mode.
Figure 72. Burst Read - SPI Mode
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
D7
D6
10
11
12
13
14
15
SCLK
Mode 0
SIO
C0h
D5
D4
D3
D2
D1
D0
Figure 73. Burst Read - QPI Mode
CS#
Mode 3
0
1
2
3
SCLK
Mode 0
SIO[3:0]
C0h
H0
MSB
L0
LSB
Note: MSB=Most Significant Bit
LSB=Least Significant Bit
P/N: PM2006
71
Rev. 1.6, July 27, 2017
MX25L51245G
9-26. Fast Boot
The Fast Boot Feature provides the ability to automatically execute read operation after power on cycle or reset
without any read instruction.
A Fast Boot Register is provided on this device. It can enable the Fast Boot function and also define the number of
delay cycles and start address (where boot code being transferred). Instruction WRFBR (write fast boot register) and
ESFBR (erase fast boot register) can be used for the status configuration or alternation of the Fast Boot Register
bit. RDFBR (read fast boot register) can be used to verify the program state of the Fast Boot Register. The default
number of delay cycles is 13 cycles, and there is a 16bytes boundary address for the start of boot code access.
When CS# starts to go low, data begins to output from default address after the delay cycles (default as 13 cycles).
After CS# returns to go high, the device will go back to standard SPI mode and user can start to input command. In
the fast boot data out process from CS# goes low to CS# goes high, a minimum of one byte must be output.
Once Fast Boot feature has been enabled, the device will automatically start a read operation after power on cycle,
reset command, or hardware reset operation.
The fast Boot feature can support Single I/O and Quad I/O interface. If the QE bit of Status Register is “0”, the data
is output by Single I/O interface. If the QE bit of Status Register is set to “1”, the data is output by Quad I/O interface.
Fast Boot Register (FBR)
Bits
31 to 4
Description
FBSA (FastBoot Start
Address)
3
x
2 to 1
FBSD (FastBoot Start
Delay Cycle)
0
FBE (FastBoot Enable)
Bit Status
Default State
16 bytes boundary address for the start of boot
FFFFFFF
code access.
1
00: 7 delay cycles
01: 9 delay cycles
10: 11 delay cycles
11: 13 delay cycles
0=FastBoot is enabled.
1=FastBoot is not enabled.
Type
NonVolatile
NonVolatile
11
NonVolatile
1
NonVolatile
Note: If FBSD = 11, the maximum clock frequency is 133 MHz
If FBSD = 10, the maximum clock frequency is 104 MHz
If FBSD = 01, the maximum clock frequency is 84 MHz
If FBSD = 00, the maximum clock frequency is 70 MHz
P/N: PM2006
72
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 74. Fast Boot Sequence (QE=0)
CS#
Mode 3
0
-
-
-
-
-
-
n+1 n+2 n+3 n+4 n+5 n+6 n+7 n+8 n+9 n+10 n+11n+12n+13n+14n+15
n
SCLK
Mode 0
Delay Cycles
Don’t care or High Impedance
SI
Data Out 1
High Impedance
SO
7
6
5
4
3
Data Out 2
2
1
0
MSB
7
6
5
4
3
2
MSB
1
0
7
MSB
Note: If FBSD = 11, delay cycles is 13 and n is 12.
If FBSD = 10, delay cycles is 11 and n is 10.
If FBSD = 01, delay cycles is 9 and n is 8.
If FBSD = 00, delay cycles is 7 and n is 6.
Figure 75. Fast Boot Sequence (QE=1)
CS#
Mode 3
0
-
-
-
-
-
-
-
n
n+1 n+2 n+3 n+5 n+6 n+7 n+8 n+9
SCLK
Mode 0
SIO0
SIO1
SIO2
SIO3
Delay Cycles
Data Data
Out 1 Out 2
High Impedance
High Impedance
High Impedance
High Impedance
Data
Out 3
Data
Out 4
4
0
4
0
4
0
4
0
4
5
1
5
1
5
1
5
1
5
6
2
6
2
6
2
6
2
6
7
3
7
3
7
3
7
3
7
MSB
Note: If FBSD = 11, delay cycles is 13 and n is 12.
If FBSD = 10, delay cycles is 11 and n is 10.
If FBSD = 01, delay cycles is 9 and n is 8.
If FBSD = 00, delay cycles is 7 and n is 6.
P/N: PM2006
73
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 76. Read Fast Boot Register (RDFBR) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
37 38 39 40 41
SCLK
Mode 0
Command
SI
16h
Data Out 1
High-Z
SO
7
6
Data Out 2
5
26 25 24 7
6
MSB
MSB
Figure 77. Write Fast Boot Register (WRFBR) Sequence
CS#
0
Mode 3
1
2
3
4
5
6
7
8
9 10
37 38 39
SCLK
Mode 0
Command
SI
Fast Boot Register
17h
7
6
5
26 25 24
MSB
High-Z
SO
Figure 78. Erase Fast Boot Register (ESFBR) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
SI
SO
P/N: PM2006
Command
18h
High-Z
74
Rev. 1.6, July 27, 2017
MX25L51245G
9-27. Sector Erase (SE)
The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". The instruction is used for
any 4K-byte sector. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before
sending the Sector Erase (SE). Any address of the sector (see "Table 4. Memory Organization") is a valid address
for Sector Erase (SE) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of the
address byte been latched-in); otherwise, the instruction will be rejected and not executed.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. Address bits [Am-A12] (Am is the most significant address) select
the sector address.
To enter the 4-byte address mode, please refer to the enter 4-byte mode (EN4B) Mode section.
The sequence of issuing SE instruction is: CS# goes low→ sending SE instruction code→ 3-byte or 4-byte address
on SI→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Sector Erase cycle is in progress. The WIP sets 1 during the tSE
timing, and clears when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect
Mode), the Sector Erase (SE) instruction will not be executed on the block.
Figure 79. Sector Erase (SE) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Mode 0
24-Bit Address
(Note)
Command
SI
20h
A23 A22
A2 A1 A0
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
Figure 80. Sector Erase (SE) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
A4A7
A0A3
SCLK
Mode 0
24-Bit Address
(Note)
Command
SIO[3:0]
20h
A20- A16- A12- A8A23 A19 A15 A11
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM2006
75
Rev. 1.6, July 27, 2017
MX25L51245G
9-28. Block Erase (BE32K)
The Block Erase (BE32K) instruction is for erasing the data of the chosen block to be "1". The instruction is used for
32K-byte block erase operation. A Write Enable (WREN) instruction be executed to set the Write Enable Latch (WEL)
bit before sending the Block Erase (BE32K). Any address of the block (see "Table 4. Memory Organization") is a
valid address for Block Erase (BE32K) instruction. The CS# must go high exactly at the byte boundary (the least
significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed.
Address bits [Am-A15] (Am is the most significant address) select the 32KB block address. The default read mode
is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode
or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte mode (EN4B) Mode section.
The sequence of issuing BE32K instruction is: CS# goes low→ sending BE32K instruction code→ 3-byte or 4-byte
address on SI→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Block Erase Cycle time (tBE32K) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while during the Block Erase cycle is in progress. The WIP sets during the
tBE32K timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared.
If the Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector
Protect Mode), the Block Erase (BE32K) instruction will not be executed on the block.
Figure 81. Block Erase 32KB (BE32K) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Mode 0
Command
SI
24-Bit Address
(Note)
52h
A23 A22
A2 A1 A0
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
Figure 82. Block Erase 32KB (BE32K) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
A4A7
A0A3
SCLK
Mode 0
24-Bit Address
(Note)
Command
SIO[3:0]
52h
A20- A16- A12A23 A19 A15
A8A11
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM2006
76
Rev. 1.6, July 27, 2017
MX25L51245G
9-29. Block Erase (BE)
The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used
for 64K-byte block erase operation. A Write Enable (WREN) instruction must be executed to set the Write Enable
Latch (WEL) bit before sending the Block Erase (BE). Any address of the block (Please refer to "Table 4. Memory
Organization") is a valid address for Block Erase (BE) instruction. The CS# must go high exactly at the byte boundary (the
least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte
mode (EN4B) Mode section.
The sequence of issuing BE instruction is: CS# goes low→ sending BE instruction code→ 3-byte or 4-byte address
on SI→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Block Erase cycle is in progress. The WIP sets during the tBE
timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the Block
is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode),
the Block Erase (BE) instruction will not be executed on the block.
Figure 83. Block Erase (BE) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Mode 0
Command
SI
24-Bit Address
(Note)
D8h
A23 A22
A2 A1 A0
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
Figure 84. Block Erase (BE) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
A4A7
A0A3
SCLK
Mode 0
24-Bit Address
(Note)
Command
SIO[3:0]
D8h
A20- A16- A12- A8A23 A19 A15 A11
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM2006
77
Rev. 1.6, July 27, 2017
MX25L51245G
9-30. Chip Erase (CE)
The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN)
instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The CS#
must go high exactly at the byte boundary, otherwise the instruction will be rejected and not executed.
The sequence of issuing CE instruction is: CS# goes low→sending CE instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Chip Erase cycle is in progress. The WIP sets during the tCE
timing, and clears when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared.
When the chip is under "Block protect (BP) Mode" (WPSEL=0). The Chip Erase (CE) instruction will not be
executed, if one (or more) sector is protected by BP3-BP0 bits. It will be only executed when BP3-BP0 all set to "0".
When the chip is under "Advances Sector Protect Mode" (WPSEL=1). The Chip Erase (CE) instruction will be
executed on unprotected block. The protected Block will be skipped. If one (or more) 4K byte sector was protected
in top or bottom 64K byte block, the protected block will also skip the chip erase command.
Figure 85. Chip Erase (CE) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
60h or C7h
Figure 86. Chip Erase (CE) Sequence (QPI Mode)
CS#
Mode 3
0
1
SCLK
Mode 0
SIO[3:0]
P/N: PM2006
Command
60h or C7h
78
Rev. 1.6, July 27, 2017
MX25L51245G
9-31. Page Program (PP)
The Page Program (PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction
must be executed to set the Write Enable Latch (WEL) bit before sending the Page Program (PP). The device
programs only the last 256 data bytes sent to the device. If the entire 256 data bytes are going to be programmed,
A7-A0 (The eight least significant address bits) should be set to 0. The last address byte (the 8 least significant
address bits, A7-A0) should be set to 0 for 256 bytes page program. If A7-A0 are not all zero, transmitted data that
exceed page length are programmed from the starting address (24-bit address that last 8 bit are all 0) of currently
selected page. If the data bytes sent to the device exceeds 256, the last 256 data byte is programmed at the request
page and previous data will be disregarded. If the data bytes sent to the device has not exceeded 256, the data
will be programmed at the request address of the page. There will be no effort on the other data bytes of the same
page.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte
mode (EN4B) Mode section.
The sequence of issuing PP instruction is: CS# goes low→ sending PP instruction code→ 3-byte or 4-byte address
on SI→ at least 1-byte on data on SI→ CS# goes high.
The CS# must be kept to low during the whole Page Program cycle; The CS# must go high exactly at the byte
boundary( the latest eighth bit of data being latched in), otherwise the instruction will be rejected and will not be
executed.
The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Page Program cycle is in progress. The WIP sets during the tPP
timing, and clears when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
page is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect
Mode), the Page Program (PP) instruction will not be executed.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
P/N: PM2006
79
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 87. Page Program (PP) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
1
0
7
6
5
3
2
1
0
2079
2
2078
3
2077
23 22 21
02h
SI
Data Byte 1
24-Bit Address
(Note)
2076
Command
2075
Mode 0
4
1
0
MSB
MSB
2074
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
2073
2072
CS#
SCLK
Data Byte 2
7
SI
6
5
4
3
2
Data Byte 3
1
MSB
0
7
6
5
4
3
2
Data Byte 256
1
7
0
MSB
6
5
4
3
2
MSB
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
Figure 88. Page Program (PP) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
H0
L0
SCLK
Mode 0
Command
SIO[3:0]
02h
Data In
24-Bit Address
(Note)
A20A23
A16A19
A12A15
A8A11
A4A7
A0A3
H1
L1
H2
L2
H3
L3
Data Byte Data Byte Data Byte Data Byte
1
2
3
4
H255 L255
......
Data Byte
256
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM2006
80
Rev. 1.6, July 27, 2017
MX25L51245G
9-32. 4 x I/O Page Program (4PP)
The Quad Page Program (4PP) instruction is for programming the memory to be "0". A Write Enable (WREN)
instruction must be executed to set the Write Enable Latch (WEL) bit and Quad Enable (QE) bit must be set to
"1" before sending the Quad Page Program (4PP). The Quad Page Programming takes four pins: SIO0, SIO1,
SIO2, and SIO3 as address and data input, which can improve programmer performance and the effectiveness of
application. The other function descriptions are as same as standard page program.
The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the
4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte
mode (EN4B) Mode section.
The sequence of issuing 4PP instruction is: CS# goes low→ sending 4PP instruction code→ 3-byte or 4-byte
address on SIO[3:0]→ at least 1-byte on data on SIO[3:0]→CS# goes high.
If the page is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector
Protect Mode), the Quad Page Program (4PP) instruction will not be executed.
Figure 89. 4 x I/O Page Program (4PP) Sequence (SPI Mode only)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21
SCLK
Mode 0
Command
Data Data Data Data
Byte 1 Byte 2 Byte 3 Byte 4
6 Address cycle
A0
4
0
4
0
4
0
4
0
SIO1
A21 A17 A13 A9 A5 A1
5
1
5
1
5
1
5
1
SIO2
A22 A18 A14 A10 A6 A2
6
2
6
2
6
2
6
2
SIO3
A23 A19 A15 A11 A7 A3
7
3
7
3
7
3
7
3
SIO0
38h
A20 A16 A12 A8 A4
Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the
address cycles will be increased.
P/N: PM2006
81
Rev. 1.6, July 27, 2017
MX25L51245G
9-33. Deep Power-down (DP)
The Deep Power-down (DP) instruction is for setting the device to minimum power consumption (the standby
current is reduced from ISB1 to ISB2). The Deep Power-down mode requires the Deep Power-down (DP) instruction
to enter, during the Deep Power-down mode, the device is not active and all Write/Program/Erase instruction are
ignored. When CS# goes high, it's only in deep power-down mode not standby mode. It's different from Standby
mode.
The sequence of issuing DP instruction is: CS# goes low→sending DP instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Once the DP instruction is set, all instruction will be ignored except the Release from Deep Power-down mode (RDP)
and Read Electronic Signature (RES) instruction and softreset command. (those instructions allow the ID being
reading out). When Power-down, or software reset command the deep power-down mode automatically stops, and
when power-up, the device automatically is in standby mode. For DP instruction the CS# must go high exactly at the
byte boundary (the latest eighth bit of instruction code been latched-in); otherwise, the instruction will not executed.
As soon as Chip Select (CS#) goes high, a delay of tDP is required before entering the Deep Power-down mode.
Figure 90. Deep Power-down (DP) Sequence (SPI Mode)
CS#
0
Mode 3
1
2
3
4
5
6
tDP
7
SCLK
Mode 0
Command
B9h
SI
Stand-by Mode
Deep Power-down Mode
Figure 91. Deep Power-down (DP) Sequence (QPI Mode)
CS#
Mode 3
0
1
tDP
SCLK
Mode 0
Command
SIO[3:0]
B9h
Stand-by Mode
P/N: PM2006
82
Deep Power-down Mode
Rev. 1.6, July 27, 2017
MX25L51245G
9-34. Enter Secured OTP (ENSO)
The ENSO instruction is for entering the additional 4K-bit secured OTP mode. While device is in 4K-bit secured
OTP mode, main array access is not available. The additional 4K-bit secured OTP is independent from main array
and may be used to store unique serial number for system identifier. After entering the Secured OTP mode, follow
standard read or program procedure to read out the data or update data. The Secured OTP data cannot be updated
again once it is lock-down.
The sequence of issuing ENSO instruction is: CS# goes low→ sending ENSO instruction to enter Secured OTP
mode→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Please note that after issuing ENSO command user can only access secure OTP region with standard read or
program procedure. Furthermore, once security OTP is lock down, only read related commands are valid.
9-35. Exit Secured OTP (EXSO)
The EXSO instruction is for exiting the additional 4K-bit secured OTP mode.
The sequence of issuing EXSO instruction is: CS# goes low→ sending EXSO instruction to exit Secured OTP
mode→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-36. Read Security Register (RDSCUR)
The RDSCUR instruction is for reading the value of Security Register bits. The Read Security Register can be read
at any time (even in program/erase/write status register/write security register condition) and continuously.
The sequence of issuing RDSCUR instruction is : CS# goes low→sending RDSCUR instruction→Security Register
data out on SO→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-37. Write Security Register (WRSCUR)
The WRSCUR instruction is for changing the values of Security Register Bits. The WREN (Write Enable) instruction
is required before issuing WRSCUR instruction. The WRSCUR instruction may change the values of bit1 (LDSO
bit) for customer to lock-down the 4K-bit Secured OTP area. Once the LDSO bit is set to "1", the Secured OTP area
cannot be updated any more.
The sequence of issuing WRSCUR instruction is :CS# goes low→ sending WRSCUR instruction → CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The CS# must go high exactly at the boundary; otherwise, the instruction will be rejected and not executed.
P/N: PM2006
83
Rev. 1.6, July 27, 2017
MX25L51245G
Security Register
The definition of the Security Register bits is as below:
Write Protection Selection bit. Please reference to "Write Protection Selection bit"
Erase Fail bit. The Erase Fail bit shows the status of last Erase operation. The bit will be set to "1" if the erase
operation failed or the erase region was protected. It will be automatically cleared to "0" if the next erase operation
succeeds. Please note that it will not interrupt or stop any operation in the flash memory.
Program Fail bit. The Program Fail bit shows the status of the last Program operation. The bit will be set to "1" if
the program operation failed or the program region was protected. It will be automatically cleared to "0" if the next
program operation succeeds. Please note that it will not interrupt or stop any operation in the flash memory.
Erase Suspend bit. Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use
ESB to identify the state of flash memory. After the flash memory is suspended by Erase Suspend command, ESB
is set to "1". ESB is cleared to "0" after erase operation resumes.
Program Suspend bit. Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may
use PSB to identify the state of flash memory. After the flash memory is suspended by Program Suspend command,
PSB is set to "1". PSB is cleared to "0" after program operation resumes.
Secured OTP Indicator bit. The Secured OTP indicator bit shows the secured OTP area is locked by factory or
not. When it is "0", it indicates non-factory lock; "1" indicates factory-lock.
Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set to "1" for
customer lock-down purpose. However, once the bit is set to "1" (lock-down), the LDSO bit and the 4K-bit Secured
OTP area cannot be updated any more.
Table 8. Security Register Definition
bit7
bit6
bit5
bit4
WPSEL
E_FAIL
P_FAIL
Reserved
bit3
ESB
PSB
(Erase
(Program
Suspend bit) Suspend bit)
0=normal
0=normal
WP mode
Erase
1= Advanced
succeed
Sector
1=indicate
Protection
Erase failed
mode
(default=0)
(default=0)
0=normal
Program
succeed
1=indicate
Program
failed
(default=0)
-
0=Erase
is not
suspended
1= Erase
suspended
(default=0)
Non-volatile
bit (OTP)
Volatile bit
Volatile bit
Volatile bit
P/N: PM2006
Volatile bit
bit2
84
bit1
bit0
LDSO
Secured OTP
(indicate if
indicator bit
lock-down)
0 = not lock0=Program
down
0 = nonis not
1 = lock-down
factory
suspended
(cannot
lock
1= Program
program/
1 = factory
suspended
erase
lock
(default=0)
OTP)
Volatile bit
Non-volatile
bit (OTP)
Non-volatile
bit (OTP)
Rev. 1.6, July 27, 2017
MX25L51245G
9-38. Write Protection Selection (WPSEL)
There are two write protection methods provided on this device, (1) Block Protection (BP) mode or (2) Advanced
Sector Protection mode. The protection modes are mutually exclusive. The WPSEL bit selects which protection
mode is enabled. If WPSEL=0 (factory default), BP mode is enabled and Advanced Sector Protection mode is
disabled. If WPSEL=1, Advanced Sector Protection mode is enabled and BP mode is disabled. The WPSEL
command is used to set WPSEL=1. A WREN command must be executed to set the WEL bit before sending the
WPSEL command. Please note that the WPSEL bit is an OTP bit. Once WPSEL is set to “1”, it cannot be
programmed back to “0”.
When WPSEL = 0: Block Protection (BP) mode,
The memory array is write protected by the BP3~BP0 bits.
When WPSEL =1: Advanced Sector Protection mode,
Blocks are individually protected by their own SPB or DPB. On power-up, all blocks are write protected by the
Dynamic Protection Bits (DPB) by default. The Advanced Sector Protection instructions WRLR, RDLR, WRPASS,
RDPASS, PASSULK, WRSPB, ESSPB, SPBLK, RDSPBLK, WRDPB, RDDPB, GBLK, and GBULK are activated.
The BP3~BP0 bits of the Status Register are disabled and have no effect. Hardware protection is performed by
driving WP#=0. Once WP#=0 all blocks and sectors are write protected regardless of the state of each SPB or DPB.
The sequence of issuing WPSEL instruction is: CS# goes low → send WPSEL instruction to enable the Advanced
Sector Protect mode → CS# goes high.
Write Protection Selection
Start
(Default in BP Mode)
WPSEL=1
Set
WPSEL Bit
Advance
Sector Protection
Set
Lock Register
WPSEL=0
Block Protection
(BP)
Bit 1 =0
Bit 2 =0
Password
Protection
P/N: PM2006
Solid
Protection
85
Dynamic
Protection
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 92. WPSEL Flow
start
WREN command
RDSCUR command
Yes
WPSEL=1?
No
WPSEL disable,
block protected by BP[3:0]
WPSEL command
RDSR command
WIP=0?
No
Yes
RDSCUR command
WPSEL=1?
No
Yes
WPSEL set successfully
WPSEL set fail
WPSEL enable.
Block protected by Advance Sector Protection
P/N: PM2006
86
Rev. 1.6, July 27, 2017
MX25L51245G
9-39. Advanced Sector Protection
Advanced Sector Protection can protect individual 4KB sectors in the bottom and top 64KB of memory and protect
individual 64KB blocks in the rest of memory.
There is one non-volatile Solid Protection Bit (SPB) and one volatile Dynamic Protection Bit (DPB) assigned to each
4KB sector at the bottom and top 64KB of memory and to each 64KB block in the rest of memory. A sector or block
is write-protected from programming or erasing when its associated SPB or DPB is set to “1”. The Unprotect Solid
Protect Bit (USPB) can temporarily override and disable the write-protection provided by the SPB bits.
There are two mutually exclusive implementations of Advanced Sector Protection: Solid Protection mode (factory
default) and Password Protection mode. Solid Protection mode permits the SPB bits to be modified after power-on
or a reset. The Password Protection mode requires a valid password before allowing the SPB bits to be modified.
The figure below is an overview of Advanced Sector Protection.
Figure 93. Advanced Sector Protection Overview
Start
Bit 1=0
Bit 2=0
Set
Lock Register ?
Solid Protection Mode
Password Protection Mode
Set 64 bit Password
Set
SPB Lock Bit ?
SPBLK = 0
SPB Lock bit locked
All SPB can not be changeable
SPBLK = 1
SPB Lock bit Unlocked
SPB is changeable
Dynamic Protect Bit Register
(DPB)
DPB=1 sector protect
Sector Array
DPB=0 sector unprotect
P/N: PM2006
SPB Access Register
(SPB)
Temporary Unprotect
SPB bit (USPB)
SPB=1 Write Protect
USPB=0 SPB bit is disabled
SPB=0 Write Unprotect
USPB=1 SPB bit is effective
DPB 0
SA 0
SPB 0
DPB 1
SA 1
SPB 1
DPB 2
SA 2
SPB 2
:
:
:
:
:
:
DPB N-1
SA N-1
SPB N-1
DPB N
SA N
SPB N
87
USPB
Rev. 1.6, July 27, 2017
MX25L51245G
9-39-1. Lock Register
The Lock Register is a 16-bit one-time programmable register. Lock Register bits [2:1] select between Solid
Protection mode and Password Protection mode. When both bits are “1” (factory default), Solid Protection mode
is enabled by default. The Lock Register is programmed using the WRLR (Write Lock Register) command.
Programming Lock Register bit 1 to “0” permanently selects Solid Protection mode and permanently disables
Password Protection mode. Conversely, programming bit 2 to “0” permanently selects Password Protection mode
and permanently disables Solid Protection mode. Bits 1 and 2 cannot be programmed to “0” at the same time
otherwise the device will abort the operation. A WREN command must be executed to set the WEL bit before
sending the WRLR command.
A password must be set prior to selecting Password Protection mode. The password can be set by issuing the
WRPASS command.
Lock Register
Bit 15-3
Reserved
Bit 2
Bit 1
Bit0
Password Protection Mode Lock Bit
Solid Protection Mode Lock Bit
Reserved
0=Password Protection Mode Enable
0=Solid Protection Mode Enable
x
1= Password Protection Mode not
x
1= Solid Protection Mode not enable (Default =1)
enable (Default =1)
OTP
OTP
OTP
OTP
Note: Once bit 2 or bit 1 has been programmed to "0", the other bit can't be changed any more. Attempts to clear
more than one bit in the Lock Register will set the Security Register P_FAIL flag to "1".
Figure 94. Read Lock Register (RDLR) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
command
2Dh
SI
Register Out
High-Z
SO
7
6
5
4
3
2
Register Out
1
0 15 14 13 12 11 10 9
7
8
MSB
MSB
Figure 95. Write Lock Register (WRLR) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCLK
Mode 0
SI
SO
P/N: PM2006
Command
2Ch
High-Z
Lock Register In
7
6
5
4
3
2
1
0 15 14 13 12 11 10 9
8
MSB
88
Rev. 1.6, July 27, 2017
MX25L51245G
9-39-2. SPB Lock Bit (SPBLK)
The SPB Lock Bit (SPBLK) is a volatile bit located in bit 0 of the SPB Lock Register. The SPBLK bit controls whether
the SPB bits can be modified or not. If SPBLK=1, the SPB bits are unprotected and can be modified. If SPBLK=0,
the SPB bits are protected (“locked”) and cannot be modified. The power-on and reset status of the SPBLK bit is
determined by Lock Register bits [2:1]. Refer to "SPB Lock Register" for SPBLK bit default power-on status. The
RDSPBLK command can be used to read the SPB Lock Register to determine the state of the SPBLK bit.
In Solid Protection mode, the SPBLK bit defaults to “1” after power-on or reset. When SPBLK=1, the SPB bits are
unprotected (“unlocked”) and can be modified. The SPB Lock Bit Set command can be used to write the SPBLK bit to “0”
and protect the SPB bits. A WREN command must be executed to set the WEL bit before sending the SPB Lock Bit
Set command. Once the SPBLK has been written to “0”, there is no command (except a software reset) to set the
bit back to “1”. A power-on cycle or reset is required to set the SPB lock bit back to “1”.
In Password Protection mode, the SPBLK bit defaults to “0” after power-on or reset. A valid password must
be provided to set the SPBLK bit to “1” to allow the SPBs to be modified. After the SPBs have been set to the
desired status, use the SPB Lock Bit Set command to clear the SPBLK bit back to “0” in order to prevent further
modification.
SPB Lock Register
Bit
Description
7-1
Reserved
0
Bit Status
X
0 = SPBs protected
1= SPBs unprotected
SPBLK (SPB Lock Bit)
Default
0000000
Solid Protection Mode: 1
Password Protection Mode: 0
Type
Volatile
Volatile
Figure 96. SPB Lock Bit Set (SPBLK) Sequence
CS#
0
Mode 3
1
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
A6h
High-Z
SO
Figure 97. Read SPB Lock Register (RDSPBLK) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
command
A7h
SI
SO
High-Z
Register Out
7
6
5
4
2
1
0
7
6
5
4
3
2
1
0
7
MSB
MSB
P/N: PM2006
3
Register Out
89
Rev. 1.6, July 27, 2017
MX25L51245G
9-39-3. Solid Protection Bits
The Solid Protection Bits (SPBs) are nonvolatile bits for enabling or disabling write-protection to sectors and blocks.
The SPB bits have the same endurance as the Flash memory. An SPB is assigned to each 4KB sector in the bottom
and top 64KB of memory and to each 64KB block in the remaining memory. The factory default state of the SPB bits
is “0”, which has the sector/block write-protection disabled.
When an SPB is set to “1”, the associated sector or block is write-protected. Program and erase operations on the
sector or block will be inhibited. SPBs can be individually set to “1” by the WRSPB command. However, the SPBs
cannot be individually cleared to “0”. Issuing the ESSPB command clears all SPBs to “0”. A WREN command must
be executed to set the WEL bit before sending the WRSPB or ESSPB command.
The SPBLK bit must be “1” before any SPB can be modified. In Solid Protection mode the SPBLK bit defaults to “1”
after power-on or reset. Under Password Protection mode, the SPBLK bit defaults to “0” after power-on or reset, and
a PASSULK command with a correct password is required to set the SPBLK bit to “1”.
The SPB Lock Bit Set command clears the SPBLK bit to “0”, locking the SPB bits from further modification.
The RDSPB command reads the status of the SPB of a sector or block. The RDSPB command returns 00h if the
SPB is “0”, indicating write-protection is disabled. The RDSPB command returns FFh if the SPB is “1”, indicating
write-protection is enabled.
In Solid Protection mode, the Unprotect Solid Protect Bit (USPB) can temporarily mask the SPB bits and disable the
write-protection provided by the SPB bits.
Note: If SPBLK=0, commands to set or clear the SPB bits will be ignored.
SPB Register
Bit
Description
7 to 0 SPB (Solid Protection Bit)
P/N: PM2006
Bit Status
00h = Unprotect Sector / Block
FFh = Protect Sector / Block
90
Default
Type
00h
Non-volatile
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 98. Read SPB Status (RDSPB) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
37 38 39 40 41 42 43 44 45 46 47
9
SCLK
Mode 0
Command
SI
32-Bit Address
E2h
A31 A30
A2 A1 A0
MSB
Data Out
High-Z
SO
7
6
5
4
3
2
1
0
MSB
Figure 99. SPB Erase (ESSPB) Sequence
CS#
1
0
Mode 3
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
E4h
High-Z
SO
Figure 100. SPB Program (WRSPB) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
37 38 39
SCLK
Mode 0
SI
Command
32-Bit Address
E3h
A31 A30
A2 A1 A0
MSB
P/N: PM2006
91
Rev. 1.6, July 27, 2017
MX25L51245G
9-39-4. Dynamic Protection Bits
The Dynamic Protection Bits (DPBs) are volatile bits for quickly and easily enabling or disabling write-protection
to sectors and blocks. A DPB is assigned to each 4KB sector in the bottom and top 64KB of memory and to each
64KB block in the rest of the memory. The DBPs can enable write-protection on a sector or block regardless of the
state of the corresponding SPB. However, the DPB bits can only unprotect sectors or blocks whose SPB bits are “0”
(unprotected).
When a DPB is “1”, the associated sector or block will be write-protected, preventing any program or erase
operation on the sector or block. All DPBs default to “1” after power-on or reset. When a DPB is cleared to “0”, the
associated sector or block will be unprotected if the corresponding SPB is also “0”.
DPB bits can be individually set to “1” or “0” by the WRDPB command. The DBP bits can also be globally cleared to
“0” with the GBULK command or globally set to “1” with the GBLK command. A WREN command must be executed
to set the WEL bit before sending the WRDPB, GBULK, or GBLK command.
The RDDPB command reads the status of the DPB of a sector or block. The RDDPB command returns 00h if the
DPB is “0”, indicating write-protection is disabled. The RDDPB command returns FFh if the DPB is “1”, indicating
write-protection is enabled.
DPB Register
Bit
Description
Bit Status
00h = Unprotect Sector / Block
FFh = Protect Sector / Block
7 to 0 DPB (Dynamic Protection Bit)
Default
Type
FFh
Volatile
Figure 101. Read DPB Register (RDDPB) Sequence
CS#
0
Mode 3
1
2
3
4
5
6
7
8
37 38 39 40 41 42 43 44 45 46 47
9
SCLK
Mode 0
Command
SI
32-Bit Address
E0h
A31 A30
A2 A1 A0
MSB
Data Out
High-Z
SO
7
6
5
4
3
2
1
0
MSB
Figure 102. Write DPB Register (WRDPB) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
37 38 39 40 41 42 43 44 45 46 47
9
SCLK
Mode 0
SI
Command
E1h
A31 A30
A2 A1 A0
MSB
P/N: PM2006
Data Byte 1
32-Bit Address
7
6
5
4
3
2
1
0
MSB
92
Rev. 1.6, July 27, 2017
MX25L51245G
9-39-5. Unprotect Solid Protect Bit (USPB)
The Unprotect Solid Protect Bit is a volatile bit that defaults to “1” after power-on or reset. When USPB=1, the SPBs
have their normal function. When USPB=0 all SPBs are masked and their write-protected sectors and blocks are
temporarily unprotected (as long as their corresponding DPBs are “0“). The USPB provides a means to temporarily
override the SPBs without having to issue the ESSPB and WRSPB commands to clear and set the SPBs. The
USPB can be set or cleared as often as needed.
Please refer to "9-39-7. Sector Protection States Summary Table" for the sector state with the protection status of
DPB/SPB/USPB bits.
9-39-6. Gang Block Lock/Unlock (GBLK/GBULK)
These instructions are only effective if WPSEL=1. The GBLK and GBULK instructions provide a quick method to set
or clear all DPB bits at once.
The WREN (Write Enable) instruction is required before issuing the GBLK/GBULK instruction.
The sequence of issuing GBLK/GBULK instruction is: CS# goes low → send GBLK/GBULK (7Eh/98h) instruction
→CS# goes high.
The GBLK and GBULK commands are accepted in both SPI and QPI mode.
The CS# must go high exactly at the byte boundary, otherwise, the instruction will be rejected and not be executed.
9-39-7. Sector Protection States Summary Table
Protection Status
DPB
SPB
USPB
Sector/Block
Protection State
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Unprotected
Unprotected
Unprotected
Protected
Protected
Protected
Protected
Protected
P/N: PM2006
93
Rev. 1.6, July 27, 2017
MX25L51245G
9-39-8. Password Protection Mode
Password Protection mode potentially provides a higher level of security than Solid Protection mode. In Password
Protection mode, the SPBLK bit defaults to “0” after a power-on cycle or reset. When SPBLK=0, the SPBs are
locked and cannot be modified. A 64-bit password must be provided to unlock the SPBs.
The PASSULK command with the correct password will set the SPBLK bit to “1” and unlock the SPB bits. After the
correct password is given, a wait of 2us is necessary for the SPB bits to unlock. The Status Register WIP bit will
clear to “0” upon completion of the PASSULK command. Once unlocked, the SPB bits can be modified. A WREN
command must be executed to set the WEL bit before sending the PASSULK command.
Several steps are required to place the device in Password Protection mode. Prior to entering the Password
Protection mode, it is necessary to set the 64-bit password and verify it. The WRPASS command writes the
password and the RDPASS command reads back the password. Password verification is permitted until the
Password Protection Mode Lock Bit has been written to “0”. Password Protection mode is activated by programming
the Password Protection Mode Lock Bit to “0”. This operation is not reversible. Once the bit is programmed, it
cannot be erased. The device remains permanently in Password Protection mode and the 64-bit password can
neither be retrieved nor reprogrammed..
The password is all “1’s” when shipped from the factory. The WRPASS command can only program password bits to “0”.
The WRPASS command cannot program “0’s” back to “1’s”. All 64-bit password combinations are valid password
options. A WREN command must be executed to set the WEL bit before sending the WRPASS command.
● The unlock operation will fail if the password provided by the PASSULK command does not match the stored
password. This will set the P_FAIL bit to “1” and insert a 100us ± 20us delay before clearing the WIP bit to “0”.
● The PASSULK command is prohibited from being executed faster than once every 100us ± 20us. This restriction
makes it impractical to attempt all combinations of a 64-bit password (such an effort would take ~58 million
years). Monitor the WIP bit to determine whether the device has completed the PASSULK command.
● When a valid password is provided, the PASSULK command does not insert the 100us delay before returning
the WIP bit to zero. The SPBLK bit will set to “1” and the P_FAIL bit will be “0”.
● It is not possible to set the SPBLK bit to “1” if the password had not been set prior to the Password Protection
mode being selected.
Password Register (PASS)
Bits
Field
Function Type
Name
63 to 0 PWD
P/N: PM2006
Description
Default State
Non-volatile OTP storage of 64 bit password. The
Hidden
password is no longer readable after the Password
OTP FFFFFFFFFFFFFFFFh
Password
Protection mode is selected by programming Lock
Register bit 2 to zero.
94
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 103. Read Password Register (RDPASS) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
69 70 71 72 73
9
SCLK
Mode 0
Command
SI
27h
Data Out 1
High-Z
SO
7
Data Out 2
6
58 57 56 7
6
MSB
MSB
Figure 104. Write Password Register (WRPASS) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
69 70 71
9
SCLK
Mode 0
Command
SI
Password
7
28h
6
58 57 56
9
69 70 71
MSB
SO
High-Z
Figure 105. Password Unlock (PASSULK) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
SCLK
Mode 0
SI
Command
Password
7
29h
6
58 57 56
MSB
SO
P/N: PM2006
High-Z
95
Rev. 1.6, July 27, 2017
MX25L51245G
9-40. Program/Erase Suspend/Resume
The device allow the interruption of Sector-Erase, Block-Erase or Page-Program operations and conduct other
operations.
After issue suspend command, the system can determine if the device has entered the Erase-Suspended mode
through Bit2 (PSB) and Bit3 (ESB) of security register. (please refer to "Table 8. Security Register Definition")
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-41. Erase Suspend
Erase suspend allow the interruption of all erase operations. After the device has entered Erase-Suspended mode,
the system can read any sector(s) or Block(s) except those being erased by the suspended erase operation.
Reading the sector or Block being erase suspended is invalid.
After erase suspend, WEL bit will be clear, only read related, resume and reset command can be accepted. (including:
03h, 0Bh, 3Bh, 6Bh, BBh, EBh, ECh, EDh, EEh, 0Ch, BCh, 3Ch, 5Ah, C0h, 06h, 04h, 2Bh, 9Fh, AFh, 05h, ABh,
90h, B1h, C1h, B0h, 30h, 66h, 99h, 00h, 35h, F5h, 15h, 2Dh, 27h, A7h, E2h, E0h, 16h)
If the system issues an Erase Suspend command after the sector erase operation has already begun, the device
will not enter Erase-Suspended mode until tESL time has elapsed.
Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use ESB to identify the state
of flash memory. After the flash memory is suspended by Erase Suspend command, ESB is set to "1". ESB is
cleared to "0" after erase operation resumes.
9-42. Program Suspend
Program suspend allows the interruption of all program operations. After the device has entered ProgramSuspended mode, the system can read any sector(s) or Block(s) except those being programmed by the suspended
program operation. Reading the sector or Block being program suspended is invalid.
After program suspend, WEL bit will be cleared, only read related, resume and reset command can be accepted.
(including: 03h, 0Bh, 3Bh, 6Bh, BBh, EBh, ECh, EDh, EEh, 0Ch, BCh, 3Ch, 5Ah, C0h, 06h, 04h, 2Bh, 9Fh, AFh,
05h, ABh, 90h, B1h, C1h, B0h, 30h, 66h, 99h, 00h, 35h, F5h, 15h, 2Dh, 27h, A7h, E2h, E0h, 16h)
Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may use PSB to identify the
state of flash memory. After the flash memory is suspended by Program Suspend command, PSB is set to "1". PSB
is cleared to "0" after program operation resumes.
P/N: PM2006
96
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 106. Suspend to Read Latency
tPSL / tESL
CS#
Suspend Command
Read Command
tPSL: Program Latency
tESL: Erase Latency
Figure 107. Resume to Read Latency
CS#
Resume Command
tSE/tBE/tPP
Read Command
Figure 108. Resume to Suspend Latency
CS#
Resume
Command
tPRS / tERS
Suspend
Command
tPRS: Program Resume to another Suspend
tERS: Erase Resume to another Suspend
P/N: PM2006
97
Rev. 1.6, July 27, 2017
MX25L51245G
9-43. Write-Resume
The Write operation is being resumed when Write-Resume instruction issued. ESB or PSB (suspend status bit) in
Status register will be changed back to “0”.
The operation of Write-Resume is as follows: CS# drives low → send write resume command cycle (30H) → drive
CS# high. By polling Busy Bit in status register, the internal write operation status could be checked to be completed
or not. The user may also wait the time lag of tSE, tBE, tPP for Sector-erase, Block-erase or Page-programming.
WREN (command "06h") is not required to issue before resume. Resume to another suspend operation requires
latency time of tPRS or tERS, as defined in "Table 18. AC CHARACTERISTICS (Temperature = -40°C to 85°C,
VCC = 2.7V-3.6V)".
Please note that, if "performance enhance mode" is executed during suspend operation, the device can not
be resumed. To restart the write command, disable the "performance enhance mode" is required. After the
"performance enhance mode" is disabled, the write-resume command is effective.
9-44. No Operation (NOP)
The “No Operation” command is only able to terminate the Reset Enable (RSTEN) command and will not affect any
other command.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
during SPI mode.
9-45. Software Reset (Reset-Enable (RSTEN) and Reset (RST))
The Software Reset operation combines two instructions: Reset-Enable (RSTEN) command and Reset (RST)
command. It returns the device to standby mode. All the volatile bits and settings will be cleared then, which makes
the device return to the default status as power on.
To execute Reset command (RST), the Reset-Enable (RSTEN) command must be executed first to perform the
Reset operation. If there is any other command to interrupt after the Reset-Enable command, the Reset-Enable will
be invalid.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
If the Reset command is executed during program or erase operation, the operation will be disabled, the data under
processing could be damaged or lost.
The reset time is different depending on the last operation. For details, please refer to "Table 14. Reset Timing(Other Operation)" for tREADY2.
P/N: PM2006
98
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 109. Software Reset Recovery
Stand-by Mode
66
CS#
99
tREADY2
Mode
Note: Refer to "Table 14. Reset Timing-(Other Operation)" for tREADY2.
Figure 110. Reset Sequence (SPI mode)
tSHSL
CS#
SCLK
Mode 3
Mode 3
Mode 0
Mode 0
Command
Command
99h
66h
SIO0
Figure 111. Reset Sequence (QPI mode)
tSHSL
CS#
MODE 3
MODE 3
MODE 3
SCLK
MODE 0
SIO[3:0]
P/N: PM2006
Command
MODE 0
66h
Command
MODE 0
99h
99
Rev. 1.6, July 27, 2017
MX25L51245G
9-46. Read SFDP Mode (RDSFDP)
The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional
and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables
can be interrogated by host system software to enable adjustments needed to accommodate divergent features
from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on
CFI.
The sequence of issuing RDSFDP instruction is CS# goes low→send RDSFDP instruction (5Ah)→send 3 address
bytes on SI pin→send 1 dummy byte on SI pin→read SFDP code on SO→to end RDSFDP operation can use CS#
to high at any time during data out.
SFDP is a JEDEC standard, JESD216B.
Figure 112. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
SO
24 BIT ADDRESS
23 22 21
5Ah
3
2
1
0
High-Z
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Dummy Cycle
SI
7
6
5
4
3
2
1
0
DATA OUT 2
DATA OUT 1
SO
7
6
5
3
2
1
0
7
MSB
MSB
P/N: PM2006
4
100
6
5
4
3
2
1
0
7
MSB
Rev. 1.6, July 27, 2017
MX25L51245G
Table 9. Signature and Parameter Identification Data Values
SFDP Table (JESD216B) below is for MX25L51245GMI-10G, MX25L51245GXDI-10G, MX25L51245GZ2I-10G,
MX25L51245GMI-08G, MX25L51245GXDI-08G and MX25L51245GZ2I-08G
Description
SFDP Signature
Comment
Fixed: 50444653h
Add (h) DW Add Data (h/b) Data
(Byte)
(Bit)
(Note1)
(h)
00h
07:00
53h
53h
01h
15:08
46h
46h
02h
23:16
44h
44h
03h
31:24
50h
50h
SFDP Minor Revision Number
Start from 00h
04h
07:00
06h
06h
SFDP Major Revision Number
Start from 01h
This number is 0-based. Therefore,
0 indicates 1 parameter header.
05h
15:08
01h
01h
06h
23:16
02h
02h
07h
31:24
FFh
FFh
00h: it indicates a JEDEC specified
header.
08h
07:00
00h
00h
Number of Parameter Headers
Unused
ID number (JEDEC)
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Start from 00h
09h
15:08
06h
06h
Start from 01h
0Ah
23:16
01h
01h
How many DWORDs in the
Parameter table
0Bh
31:24
10h
10h
0Ch
07:00
30h
30h
Parameter Table Pointer (PTP)
First address of JEDEC Flash
Parameter table
0Dh
15:08
00h
00h
0Eh
23:16
00h
00h
0Fh
31:24
FFh
FFh
Unused
P/N: PM2006
101
Rev. 1.6, July 27, 2017
MX25L51245G
SFDP Table below is for MX25L51245GMI-10G, MX25L51245GXDI-10G, MX25L51245GZ2I-10G,
MX25L51245GMI-08G, MX25L51245GXDI-08G and MX25L51245GZ2I-08G
Description
ID number
(Macronix manufacturer ID)
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Parameter Table Pointer (PTP)
Comment
it indicates Macronix manufacturer
ID
10h
07:00
C2h
C2h
Start from 00h
11h
15:08
00h
00h
Start from 01h
12h
23:16
01h
01h
How many DWORDs in the
Parameter table
13h
31:24
04h
04h
14h
07:00
10h
10h
15h
15:08
01h
01h
16h
23:16
00h
00h
17h
31:24
FFh
FFh
4-byte Address Instruction
parameter ID
18h
07:00
84h
84h
Start from 00h
19h
15:08
00h
00h
Start from 01h
1Ah
23:16
01h
01h
How many DWORDs in the
Parameter table
1Bh
31:24
02h
02h
1Ch
07:00
C0h
C0h
1Dh
15:08
00h
00h
1Eh
23:16
00h
00h
1Fh
31:24
FFh
FFh
First address of Macronix Flash
Parameter table
Unused
ID number
(4-byte Address Instruction)
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Parameter Table Pointer (PTP)
First address of 4-byte Address
Instruction table
Unused
P/N: PM2006
Add (h) DW Add Data (h/b) Data
(Byte)
(Bit)
(Note1)
(h)
102
Rev. 1.6, July 27, 2017
MX25L51245G
Table 10. Parameter Table (0): JEDEC Flash Parameter Tables
SFDP Table below is for MX25L51245GMI-10G, MX25L51245GXDI-10G, MX25L51245GZ2I-10G,
MX25L51245GMI-08G, MX25L51245GXDI-08G and MX25L51245GZ2I-08G
Description
Comment
Block/Sector Erase sizes
00: Reserved, 01: 4KB erase,
10: Reserved,
11: not supported 4KB erase
Write Granularity
0: 1Byte, 1: 64Byte or larger
Write Enable Instruction Required 0: not required
1: required 00h to be written to the
for Writing to Volatile Status
status register
Registers
Add (h) DW Add Data (h/b)
(Byte)
(Bit)
(Note1)
01b
02
1b
03
0b
30h
0: use 50h instruction
1: use 06h instruction
Write Enable Instruction Select for
Note: If target flash status register is
Writing to Volatile Status Registers
nonvolatile, then bits 3 and 4 must
be set to 00b.
Contains 111b and can never be
Unused
changed
4KB Erase Instruction
01:00
31h
E5h
04
0b
07:05
111b
15:08
20h
(1-1-2) Fast Read (Note2)
0=not supported 1=supported
16
1b
Address Bytes Number used in
addressing flash array
Double Transfer Rate (DTR)
Clocking
00: 3Byte only, 01: 3 or 4Byte,
10: 4Byte only, 11: Reserved
18:17
01b
0=not supported 1=supported
19
1b
20
1b
32h
Data
(h)
20h
FBh
(1-2-2) Fast Read
0=not supported 1=supported
(1-4-4) Fast Read
0=not supported 1=supported
21
1b
(1-1-4) Fast Read
0=not supported 1=supported
22
1b
23
1b
33h
31:24
FFh
37h:34h
31:00
1FFF FFFFh
Unused
Unused
Flash Memory Density
(1-4-4) Fast Read Number of Wait
states (Note3)
(1-4-4) Fast Read Number of
Mode Bits (Note4)
0 0000b: Not supported; 0 0100b: 4
0 0110b: 6; 0 1000b: 8
Mode Bits:
000b: Not supported; 010b: 2 bits
(1-4-4) Fast Read Instruction
(1-1-4) Fast Read Number of Wait
states
(1-1-4) Fast Read Number of
Mode Bits
39h
0 0000b: Not supported; 0 0100b: 4
0 0110b: 6; 0 1000b: 8
Mode Bits:
000b: Not supported; 010b: 2 bits
(1-1-4) Fast Read Instruction
P/N: PM2006
38h
3Ah
3Bh
103
04:00
0 0100b
07:05
010b
15:08
EBh
20:16
0 1000b
23:21
000b
31:24
6Bh
FFh
44h
EBh
08h
6Bh
Rev. 1.6, July 27, 2017
MX25L51245G
SFDP Table below is for MX25L51245GMI-10G, MX25L51245GXDI-10G, MX25L51245GZ2I-10G,
MX25L51245GMI-08G, MX25L51245GXDI-08G and MX25L51245GZ2I-08G
Description
Comment
(1-1-2) Fast Read Number of Wait
states
(1-1-2) Fast Read Number of
Mode Bits
0 0000b: Not supported; 0 0100b: 4
0 0110b: 6; 0 1000b: 8
Mode Bits:
000b: Not supported; 010b: 2 bits
(1-1-2) Fast Read Instruction
(1-2-2) Fast Read Number of Wait
states
(1-2-2) Fast Read Number of
Mode Bits
0 0000b: Not supported; 0 0100b: 4
0 0110b: 6; 0 1000b: 8
Mode Bits:
000b: Not supported; 010b: 2 bits
3Eh
3Fh
0=not supported 1=supported
Unused
(4-4-4) Fast Read
3Ch
3Dh
(1-2-2) Fast Read Instruction
(2-2-2) Fast Read
Add (h) DW Add Data (h/b)
(Byte)
(Bit)
(Note1)
0=not supported 1=supported
40h
Unused
04:00
0 1000b
07:05
000b
15:08
3Bh
20:16
0 0100b
23:21
000b
31:24
BBh
00
0b
03:01
111b
04
1b
07:05
111b
Data
(h)
08h
3Bh
04h
BBh
FEh
Unused
43h:41h
31:08
FFh
FFh
Unused
45h:44h
15:00
FFh
FFh
20:16
0 0000b
23:21
000b
47h
31:24
FFh
FFh
49h:48h
15:00
FFh
FFh
20:16
0 0100b
23:21
010b
4Bh
31:24
EBh
EBh
4Ch
07:00
0Ch
0Ch
4Dh
15:08
20h
20h
4Eh
23:16
0Fh
0Fh
4Fh
31:24
52h
52h
50h
07:00
10h
10h
51h
15:08
D8h
D8h
52h
23:16
00h
00h
53h
31:24
FFh
FFh
(2-2-2) Fast Read Number of Wait
states
(2-2-2) Fast Read Number of
Mode Bits
0 0000b: Not supported; 0 0100b: 4
0 0110b: 6; 0 1000b: 8
Mode Bits:
000b: Not supported; 010b: 2 bits
(2-2-2) Fast Read Instruction
Unused
(4-4-4) Fast Read Number of Wait
states
(4-4-4) Fast Read Number of
Mode Bits
0 0000b: Not supported; 0 0100b: 4
0 0110b: 6; 0 1000b: 8
Mode Bits:
000b: Not supported; 010b: 2 bits
(4-4-4) Fast Read Instruction
Erase Type 1 Size
Sector/block size = 2^N bytes (Note5)
0Ch: 4KB; 0Fh: 32KB; 10h: 64KB
Erase Type 1 Erase Instruction
Erase Type 2 Size
Sector/block size = 2^N bytes
00h: N/A; 0Fh: 32KB; 10h: 64KB
Erase Type 2 Erase Instruction
Erase Type 3 Size
Sector/block size = 2^N bytes
00h: N/A; 0Fh: 32KB; 10h: 64KB
Erase Type 3 Erase Instruction
Erase Type 4 Size
00h: N/A, This sector type doesn't
exist
Erase Type 4 Erase Instruction
P/N: PM2006
104
46h
4Ah
00h
44h
Rev. 1.6, July 27, 2017
MX25L51245G
SFDP Table below is for MX25L51245GMI-10G, MX25L51245GXDI-10G, MX25L51245GZ2I-10G,
MX25L51245GMI-08G, MX25L51245GXDI-08G and MX25L51245GZ2I-08G
Description
Add (h) DW Add
(Byte)
(Bit)
Comment
Multiplier value: 0h~Fh (0~15)
Multiplier from typical erase time
Max. time = 2 * (Multiplier + 1) *
to maximum erase time
Typical Time
Erase Type 1 Erase Time
(Typical)
EraseType 2 Erase Time
(Typical)
Erase Type 3 Erase Time
(Typical)
Erase Type 4 Erase Time
(Typical)
Multiplier from typical time
to max time for Page or byte
program
Page Program Size
Page Program Time
(Typical)
Byte Program Time, First Byte
(Typical)
Byte Program Time, Additional
Byte
(Typical)
P/N: PM2006
Data (h/b)
(Note1)
03:00
0110b
07:04
08
1 1101b
10:09
00b
Count value: 00h~1Fh (0~31)
Typical Time = (Count + 1) * Units
15:11
0 1001b
Units
00: 1ms, 01: 16ms
10b: 128ms, 11b: 1s
17:16
01b
22:18
1 0001b
24:23
01b
29:25
0 0000b
31:30
00b
03:00
0001b
07:04
1000h
12:08
1 1111b
13
0b
15:14
17:16
0011b
18
1b
22:19
0000b
23
0b
54h
Count value: 00h~1Fh (0~31)
Typical Time = (Count + 1) * Units
Units
00: 1ms, 01: 16ms
10b: 128ms, 11b: 1s
55h
Count value: 00h~1Fh (0~31)
Typical Time = (Count + 1) * Units
Units
00: 1 ms, 01: 16 ms
10b: 128ms, 11b: 1s
Count value: 00h~1Fh (0~31)
Typical Time = (Count + 1) * Units
Units
00: 1ms, 01: 16ms
10b: 128 ms, 11b: 1 s
Multiplier value: 0h~Fh (0~15)
Max. time = 2 * (Multiplier + 1)
*Typical Time
Page size = 2^N bytes
2^8 = 256 bytes, 8h = 1000b
56h
57h
58h
Count value: 00h~1Fh (0~31)
Typical Time = (Count + 1) * Units
59h
Units
0: 8us, 1: 64us
Count value: 0h~Fh (0~15)
Typical Time = (Count + 1) * Units
Units
0: 1us, 1: 8us
Count value: 0h~Fh (0~15)
Typical Time = (Count + 1) * Units
Units
0: 1us, 1: 8us
105
5Ah
Data
(h)
D6h
49h
C5h
00h
81h
DFh
04h
Rev. 1.6, July 27, 2017
MX25L51245G
SFDP Table below is for MX25L51245GMI-10G, MX25L51245GXDI-10G, MX25L51245GZ2I-10G,
MX25L51245GMI-08G, MX25L51245GXDI-08G and MX25L51245GZ2I-08G
Description
Chip Erase Time
(Typical)
Reserved
Prohibited Operations During
Program Suspend
Prohibited Operations During
Erase Suspend
Reserved
Program Resume to Suspend
Interval (Typical)
Program Suspend Latency
(Max.)
Erase Resume to Suspend
Interval (Typical)
Erase Suspend Latency
(Max.)
Suspend / Resume supported
Program Resume Instruction
Program Suspend Instruction
Erase Resume Instruction
Erase Suspend Instruction
P/N: PM2006
Comment
Count value: 00h~1Fh (0~31)
Typical Time = (Count + 1) * Units
Units
00: 16ms, 01: 256ms
10: 4s, 11: 64s
Reserved: 1b
xxx0b: May not initiate a new erase
anywhere
xx0xb: May not initiate a new page
program anywhere
x1xxb:
May
not initiate a read in
the program suspended
page size
1xxxb: The erase and program
restrictions in bits 1:0 are
sufficient
xxx0b: May not initiate a new erase
anywhere
xx1xb: May not initiate a page
program in the erase
suspended sector size
xx0xb: May not initiate a page
program anywhere
x1xxb: May not initiate a read in
the erase suspended sector
size
1xxxb: The erase and program
restrictions in bits 5:4 are
sufficient
Reserved: 1b
Count value: 0h~Fh (0~15)
Typical Time = (Count + 1) * 64us
Count value: 00h~1Fh (0~31)
Maximum Time = (Count + 1) * Units
Units
00: 128ns, 01: 1us
10: 8us, 11: 64us
Count value: 0h~Fh (0~15)
Typical Time = (Count + 1) * 64us
Count value: 00h~1Fh (0~31)
Maximum Time = (Count + 1) * Units
Units
00: 128ns, 01: 1us
10: 8us, 11: 64us
0= Support 1= Not supported
Instruction to Resume a Program
Instruction to Suspend a Program
Instruction to Resume Write/Erase
Instruction to Suspend Write/Erase
106
Add (h) DW Add
(Byte)
(Bit)
27:24
28
5Bh
Data (h/b)
(Note1)
0 0011b
E3h
30:29
11b
31
1b
03:00
0100b
5Ch
5Dh
5Eh
5Fh
60h
61h
62h
63h
Data
(h)
44h
07:04
0100b
08
1b
12:09
0001b
15:13
17:16
1 1000b
19:18
01b
23:20
0110b
28:24
1 1000b
30:29
01b
31
07:00
15:08
23:16
31:24
0b
30h
B0h
30h
B0h
03h
67h
38h
30h
B0h
30h
B0h
Rev. 1.6, July 27, 2017
MX25L51245G
SFDP Table below is for MX25L51245GMI-10G, MX25L51245GXDI-10G, MX25L51245GZ2I-10G,
MX25L51245GMI-08G, MX25L51245GXDI-08G and MX25L51245GZ2I-08G
Description
Comment
Reserved
Reserved: 11b
Bit 2: Read WIP bit [0] by 05h Read
instruction
Status Register Polling Device
Bit 3: Read bit 7 of Status Register
Busy
by 70h Read instruction
(0=not supported 1=support)
Bit 07:04, Reserved: 1111b
Count value: 00h~1Fh (0~31)
Release from Deep Power-down Maximum Time = (Count + 1) * Units
Units
(RDP) Delay
00: 128ns, 01: 1us
(Max.)
10: 8us, 11: 64us
Release from Deep Power-down
Instruction to Exit Deep Power Down
(RDP) Instruction
Enter Deep Power Down
Instruction to Enter Deep Power
Instruction
Down
Deep Power Down Supported
0: Supported 1: Not supported
Methods to exit 4-4-4 mode
4-4-4 Mode Disable Sequences
xx1xb: issue F5h instruction
Methods to enter 4-4-4 mode
4-4-4 Mode Enable Sequences
x_x1xxb: issue instruction 35h
Performance Enhance Mode,
0-4-4 Mode Supported
Continuous Read, Execute in Place
0: Not supported 1: Supported
xx_xxx1b: Mode Bits[7:0] = 00h will
terminate this mode at the end
of the current read operation.
xx_xx1xb: If 3-Byte address active,
input Fh on DQ0-DQ3 for 8
clocks. If 4-Byte address active,
input Fh on DQ0-DQ3 for 10
0-4-4 Mode Exit Method
clocks.
xx_x1xxb: Reserved
xx_1xxxb: Input Fh (mode bit reset)
on DQ0-DQ3 for 8 clocks.
x1_xxxxb: Mode Bit[7:0]≠Axh
1x_xxxxb: Reserved
xxx1b: Mode Bits[7:0] = A5h Note:
QE must be set prior to using
this mode
0-4-4 Mode Entry Method
x1xxb: Mode Bit[7:0]=Axh
1xxxb: Reserved
000b: No QE bit. Detects 1-1-4/1-4
4 reads based on instruction
Quad Enable (QE) bit
010b: QE is bit 6 of Status Register.
Requirements
where 1=Quad Enable or
0=not Quad Enable
111b: Not Supported
HOLD and RESET Disable by bit
0: Not supported
4 of Ext. Configuration Register
P/N: PM2006
107
Add (h) DW Add
(Byte)
(Bit)
01:00
64h
65h
66h
67h
68h
Data (h/b)
(Note1)
11b
07:02
11 1101b
12:08
1 1101b
14:13
01b
15
22:16
23
30:24
31
1010 1011b
(ABh)
1011 1001b
(B9h)
0b
03:00
1010b
07:04
08
0 0100b
09
1b
Data
(h)
F7h
BDh
69h
D5h
5Ch
4Ah
9Eh
15:10
10 0111b
19:16
1001h
6Ah
29h
22:20
010b
23
0b
Rev. 1.6, July 27, 2017
MX25L51245G
SFDP Table below is for MX25L51245GMI-10G, MX25L51245GXDI-10G, MX25L51245GZ2I-10G,
MX25L51245GMI-08G, MX25L51245GXDI-08G and MX25L51245GZ2I-08G
Description
Add (h) DW Add
(Byte)
(Bit)
Comment
Reserved
6Bh
xxx_xxx1b: Non-Volatile Status
Register 1, powers-up to last
Volatile or Non-Volatile Register
written value, use instruction
and Write Enable Instruction for
06h to enable write
Status Register 1
x1x_xxxxb: Reserved
1xx_xxxxb: Reserved
6Ch
Reserved
Soft Reset and Rescue
Sequence Support
Exit 4-Byte Addressing
P/N: PM2006
Return the device to its default
power-on state
x1_xxxxb: issue reset enable
instruction 66h, then issue reset
instruction 99h.
xx_xxxx_xxx1b: issue instruction
E9h to exit 4-Byte address
mode (write enable instruction
06h is not required)
xx_xxxx_x1xxb: 8-bit volatile
extended address register used
to define A[31:A24] bits. Read
with instruction C8h. Write
instruction is C5h, data length
is 1 byte. Return to lowest
memory segment by setting
A[31:24] to 00h and use 3-Byte
addressing.
xx_xx1x_xxxxb: Hardware reset
xx_x1xx_xxxxb: Software reset
(see bits 13:8 in this DWORD)
xx_1xxx_xxxxb: Power cycle
x1_xxxx_xxxxb: Reserved
1x_xxxx_xxxxb: Reserved
108
6Dh
6Eh
Data (h/b)
(Note1)
Data
(h)
31:24
FFh
FFh
06:00
111 0000b
07
1b
13:08
01 0000b
15:14
01b
23:16
1111 1001b
F0h
50h
F9h
Rev. 1.6, July 27, 2017
MX25L51245G
SFDP Table below is for MX25L51245GMI-10G, MX25L51245GXDI-10G, MX25L51245GZ2I-10G,
MX25L51245GMI-08G, MX25L51245GXDI-08G and MX25L51245GZ2I-08G
Description
Enter 4-Byte Addressing
P/N: PM2006
Comment
xxxx_xxx1b: issue instruction
B7h (preceding write
enable not required)
xxxx_x1xxb: 8-bit volatile extended
address register used
to define A[31:24] bits.
Read with instruction
C8h. Write instruction
is C5h with 1 byte of
data. Select the active
128 Mbit memory
segment by setting the
appropriate A[31:24]
bits and use 3-Byte
addressing.
xx1x_xxxxb: Supports dedicated
4-Byte address
instruction set. Consult
vendor data sheet
for the instruction set
definition.
1xxx_xxxxb: Reserved
109
Add (h) DW Add
(Byte)
(Bit)
6Fh
31:24
Data (h/b)
(Note1)
Data
(h)
1000 0101b
85h
Rev. 1.6, July 27, 2017
MX25L51245G
Table 11. Parameter Table (1): 4-Byte Instruction Tables
SFDP Table below is for MX25L51245GMI-10G, MX25L51245GXDI-10G, MX25L51245GZ2I-10G,
MX25L51245GMI-08G, MX25L51245GXDI-08G and MX25L51245GZ2I-08G
Description
Support for (1-1-1) READ
Command, Instruction=13h
Support for (1-1-1) FAST_READ
Command, Instruction=0Ch
Support for (1-1-2) FAST_READ
Command, Instruction=3Ch
Support for (1-2-2) FAST_READ
Command, Instruction=BCh
Support for (1-1-4) FAST_READ
Command, Instruction=6Ch
Support for (1-4-4) FAST_READ
Command, Instruction=ECh
Support for (1-1-1) Page Program
Command, Instruction=12h
Support for (1-1-4) Page Program
Command, Instruction=34h
Support for (1-4-4) Page Program
Command, Instruction=3Eh
Support for Erase Command –
Type 1 size, Instruction lookup in
next Dword
Support for Erase Command –
Type 2 size, Instruction lookup in
next Dword
Support for Erase Command –
Type 3 size, Instruction lookup in
next Dword
Support for Erase Command –
Type 4 size, Instruction lookup in
next Dword
Support for (1-1-1) DTR_Read
Command, Instruction=0Eh
Support for (1-2-2) DTR_Read
Command, Instruction=BEh
Support for (1-4-4) DTR_Read
Command, Instruction=EEh
P/N: PM2006
Comment
Add (h) DW Add Data (h/b) Data
(Byte)
(Bit)
(Note1)
(h)
0=not supported 1=supported
00
1b
0=not supported 1=supported
01
1b
0=not supported 1=supported
02
1b
03
1b
04
1b
0=not supported 1=supported
05
1b
0=not supported 1=supported
06
1b
0=not supported 1=supported
07
0b
0=not supported 1=supported
08
1b
0=not supported 1=supported
09
1b
0=not supported 1=supported
10
1b
11
1b
0=not supported 1=supported
12
0b
0=not supported 1=supported
13
1b
0=not supported 1=supported
14
1b
0=not supported 1=supported
15
1b
0=not supported 1=supported
0=not supported 1=supported
0=not supported 1=supported
110
C0h
C1h
7Fh
EFh
Rev. 1.6, July 27, 2017
MX25L51245G
SFDP Table below is for MX25L51245GMI-10G, MX25L51245GXDI-10G, MX25L51245GZ2I-10G,
MX25L51245GMI-08G, MX25L51245GXDI-08G and MX25L51245GZ2I-08G
Description
Support for volatile individual
sector lock Read command,
Instruction=E0h
Support for volatile individual
sector lock Write command,
Instruction=E1h
Support for non-volatile individual
sector lock read command,
Instruction=E2h
Support for non-volatile individual
sector lock write command,
Instruction=E3h
Comment
Add (h) DW Add Data (h/b) Data
(Byte)
(Bit)
(Note1)
(h)
0=not supported 1=supported
16
1b
0=not supported 1=supported
17
1b
18
1b
19
1b
23:20
1111b
0=not supported 1=supported
C2h
0=not supported 1=supported
FFh
Reserved
Reserved
Reserved
Reserved
C3h
31:24
FFh
FFh
Instruction for Erase Type 1
FFh=not supported
C4h
07:00
21h
21h
Instruction for Erase Type 2
FFh=not supported
C5h
15:08
5Ch
5Ch
Instruction for Erase Type 3
FFh=not supported
C6h
23:16
DCh
DCh
Instruction for Erase Type 4
FFh=not supported
C7h
31:24
FFh
FFh
P/N: PM2006
111
Rev. 1.6, July 27, 2017
MX25L51245G
Table 12. Parameter Table (2): Macronix Flash Parameter Tables
SFDP Table below is for MX25L51245GMI-10G, MX25L51245GXDI-10G, MX25L51245GZ2I-10G,
MX25L51245GMI-08G, MX25L51245GXDI-08G and MX25L51245GZ2I-08G
Description
Add (h)
(Byte)
Comment
DW Add Data (h/b)
(Bit)
(Note1)
Data
(h)
Vcc Supply Maximum Voltage
2000h=2.000V
2700h=2.700V
3600h=3.600V
111h:110h
07:00
15:08
00h
36h
00h
36h
Vcc Supply Minimum Voltage
1650h=1.650V, 1750h=1.750V
2250h=2.250V, 2300h=2.300V
2350h=2.350V, 2650h=2.650V
2700h=2.700V
113h: 112h
23:16
31:24
00h
27h
00h
27h
H/W Reset# pin
0=not supported 1=supported
00
1b
H/W Hold# pin
0=not supported 1=supported
01
0b
Deep Power Down Mode
0=not supported 1=supported
02
1b
S/W Reset
0=not supported 1=supported
03
1b
S/W Reset Instruction
Reset Enable (66h) should be
issued before Reset Instruction
Program Suspend/Resume
0=not supported 1=supported
12
1b
Erase Suspend/Resume
0=not supported 1=supported
13
1b
14
1b
15
1b
116h
23:16
C0h
C0h
117h
31:24
64h
64h
115h: 114h
Unused
Wrap-Around Read mode
0=not supported 1=supported
Wrap-Around Read mode
Instruction
11:04
1001 1001b F99Dh
(99h)
Wrap-Around Read data length
08h:support 8B wrap-around read
16h:8B&16B
32h:8B&16B&32B
64h:8B&16B&32B&64B
Individual block lock
0=not supported 1=supported
00
1b
Individual block lock bit
(Volatile/Nonvolatile)
0=Volatile 1=Nonvolatile
01
0b
09:02
1110 0001b
(E1h)
10
0b
11
1b
Individual block lock Instruction
Individual block lock Volatile
protect bit default protect status
0=protect 1=unprotect
Secured OTP
0=not supported 1=supported
Read Lock
0=not supported 1=supported
12
0b
Permanent Lock
0=not supported 1=supported
13
0b
Unused
15:14
11b
Unused
31:16
FFh
FFh
31:00
FFh
FFh
Unused
P/N: PM2006
11Bh: 118h
11Fh: 11Ch
112
CB85h
Rev. 1.6, July 27, 2017
MX25L51245G
Note 1: h/b is hexadecimal or binary.
Note 2: (x-y-z) means I/O mode nomenclature used to indicate the number of active pins used for the opcode (x),
address (y), and data (z). At the present time, the only valid Read SFDP instruction modes are: (1-1-1), (2-2-2),
and (4-4-4)
Note 3: Wait States is required dummy clock cycles after the address bits or optional mode bits.
Note 4: Mode Bits is optional control bits that follow the address bits. These bits are driven by the system controller
if they are specified. (eg,read performance enhance toggling bits)
Note 5: 4KB=2^0Ch, 32KB=2^0Fh, 64KB=2^10h
Note 6: All unused and undefined area data is blank FFh for SFDP Tables that are defined in Parameter
Identification Header. All other areas beyond defined SFDP Table are reserved by Macronix.
P/N: PM2006
113
Rev. 1.6, July 27, 2017
MX25L51245G
10. RESET
Driving the RESET# pin low for a period of tRLRH or longer will reset the device. After reset cycle, the device is at
the following states:
- Standby mode
- All the volatile bits such as WEL/WIP/SRAM lock bit will return to the default status as power on.
- 3-byte address mode
If the device is under programming or erasing, driving the RESET# pin low will also terminate the operation and data
could be lost. During the resetting cycle, the SO data becomes high impedance and the current will be reduced to
minimum.
Figure 113. RESET Timing
CS#
tRHSL
SCLK
tRH tRS
RESET#
tRLRH
tREADY1 / tREADY2
Table 13. Reset Timing-(Power On)
Symbol Parameter
tRHSL Reset# high before CS# low
tRS
Reset# setup time
tRH
Reset# hold time
tRLRH Reset# low pulse width
tREADY1 Reset Recovery time
Min.
10
15
15
10
35
Typ.
Max.
Unit
us
ns
ns
us
us
Min.
10
15
15
10
40
40
310
12
25
1000
40
Typ.
Max.
Unit
us
ns
ns
us
us
us
us
ms
ms
ms
ms
Table 14. Reset Timing-(Other Operation)
Symbol
tRHSL
tRS
tRH
tRLRH
Parameter
Reset# high before CS# low
Reset# setup time
Reset# hold time
Reset# low pulse width
Reset Recovery time (During instruction decoding)
Reset Recovery time (for read operation)
Reset Recovery time (for program operation)
tREADY2 Reset Recovery time(for SE4KB operation)
Reset Recovery time (for BE64K/BE32KB operation)
Reset Recovery time (for Chip Erase operation)
Reset Recovery time (for WRSR operation)
P/N: PM2006
114
Rev. 1.6, July 27, 2017
MX25L51245G
11. POWER-ON STATE
The device is at below states when power-up:
- Standby mode (please note it is not deep power-down mode)
- Write Enable Latch (WEL) bit is reset
The device must not be selected during power-up and power-down stage unless the VCC achieves below correct
level:
- VCC minimum at power-up stage and then after a delay of tVSL
- GND at power-down
Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level.
An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change
during power up state. When VCC is lower than VWI (POR threshold voltage value), the internal logic is reset and
the flash device has no response to any command.
For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is not
guaranteed. The write, erase, and program command should be sent after the below time delay:
- tVSL after VCC reached VCC minimum level
The device can accept read command after VCC reached VCC minimum and a time delay of tVSL.
Please refer to the "power-up timing".
Note:
- To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is
recommended. (generally around 0.1uF)
- At power-down stage, the VCC drops below VWI level, all operations are disable and device has no response
to any command. The data corruption might occur during the stage while a write, program, erase cycle is in
progress.
P/N: PM2006
115
Rev. 1.6, July 27, 2017
MX25L51245G
12. ELECTRICAL SPECIFICATIONS
Table 15. ABSOLUTE MAXIMUM RATINGS
RATING
VALUE
Ambient Operating Temperature
Industrial grade
-40°C to 85°C
Storage Temperature
-65°C to 150°C
Applied Input Voltage
-0.5V to VCC+0.5V
Applied Output Voltage
-0.5V to VCC+0.5V
VCC to Ground Potential
-0.5V to 4.0V
NOTICE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is stress rating only and functional operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended period may affect reliability.
2. Specifications contained within the following tables are subject to change.
3. During voltage transitions, all pins may overshoot to VCC+2.0V or -2.0V for period up to 20ns.
Figure 115. Maximum Positive Overshoot Waveform
Figure 114. Maximum Negative Overshoot Waveform
20ns
20ns
20ns
Vss
Vcc + 2.0V
Vss-2.0V
Vcc
20ns
20ns
20ns
Table 16. CAPACITANCE TA = 25°C, f = 1.0 MHz
Symbol Parameter
CIN
COUT
P/N: PM2006
Min.
Typ.
Max.
Unit
Input Capacitance
8
pF
VIN = 0V
Output Capacitance
8
pF
VOUT = 0V
116
Conditions
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 116. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL
Input timing reference level
0.8VCC
Output timing reference level
0.7VCC
AC
Measurement
Level
0.8V
0.2VCC
0.5VCC
Note: Input pulse rise and fall time are 66MHz
45% x (1/fSCLK)
Others
(fSCLK)
tCH(1) tCLH Clock High Time
≤ 66MHz
7
tCL(1)
tCLL Clock Low Time
tCLCH(2)
tCHCL(2)
tSLCH tCSS
tCHSL
tDVCH tDSU
tCHDX
tDH
tCHSH
tSHCH
tSHSL
tCSH
tSHQZ(2) tDIS
tCLQV
tCLQX
tWHSL(3)
tSHWL(3)
tDP(2)
tRES1(2)
tRES2(2)
tW
tWREAW
tBP
tPP
tPP(5)
P/N: PM2006
tV
tHO
Normal Read (fRSCLK)
> 66MHz
Others
(fSCLK)
≤ 66MHz
Normal Read (fRSCLK)
Clock Rise Time (peak to peak)
Clock Fall Time (peak to peak)
CS# Active Setup Time (relative to SCLK)
CS# Not Active Hold Time (relative to SCLK)
Data In Setup Time
VCC: 2.7V - 3.6V
Data In Hold Time
VCC: 3.0V - 3.6V
(Loading: 15pF/10pF)
CS# Active Hold Time (relative to SCLK)
CS# Not Active Setup Time (relative to SCLK)
From Read to next Read
CS# Deselect Time From Write/Erase/Program to
Read Status Register
Output Disable Time
Loading: 30pF
VCC:
Loading: 15pF
2.7V - 3.6V
Loading: 10pF
Clock Low to Output
Loading: 15pF
Valid
ODS (1,1,0)
VCC:
3.0V - 3.6V Loading: 10pF
ODS (1,1,0)
Loading: 30pF
Output Hold Time
Loading: 15pF
Write Protect Setup Time
Write Protect Hold Time
CS# High to Deep Power-down Mode
CS# High to Standby Mode without Electronic
Signature Read
CS# High to Standby Mode with Electronic
Signature Read
Write Status/Configuration Register Cycle Time
Write Extended Address Register
Byte-Program
Page Program Cycle Time
Page Program Cycle Time (n bytes)
119
MHz
MHz
ns
7
45% x (1/fSCLK)
ns
ns
ns
7
7
0.1
0.1
3
4
2
2
ns
ns
V/ns
V/ns
ns
ns
ns
ns
1
ns
3
3
7
ns
ns
ns
30
ns
1
1
20
100
8
8
6
5
ns
ns
ns
ns
5
ns
4.5
ns
10
ns
ns
ns
ns
us
30
us
30
us
40
40
25
60
0.25
0.75
0.016 + 0.016*
0.75
(n/16) (6)
ms
ns
us
ms
ms
Rev. 1.6, July 27, 2017
MX25L51245G
Symbol
tSE
tBE32
tBE
tCE
tESL(8)
tPSL(8)
tPRS(9)
(10)
tERS
Alt. Parameter
Sector Erase Cycle Time
Block Erase (32KB) Cycle Time
Block Erase (64KB) Cycle Time
Chip Erase Cycle Time
Erase Suspend Latency
Program Suspend Latency
Latency between Program Resume and next
Suspend
Latency between Erase Resume and next Suspend
Min.
Typ.
30
150
280
140
Max.
400
1000
2000
200
25
25
Unit
ms
ms
ms
s
us
us
0.3
100
us
0.3
400
us
Notes:
1. tCH + tCL must be greater than or equal to 1/ Frequency.
2. Typical values given for TA=25°C. Not 100% tested.
3. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
4. Test condition is shown as Figure 116 and Figure 117.
5. While programming consecutive bytes, Page Program instruction provides optimized timings by selecting to
program the whole 256 bytes or only a few bytes between 1~256 bytes.
6. “n”=how many bytes to program. The number of (n/16) will be round up to next integer. In the formula, while n=1,
byte program time=32us. While n=17, byte program time=48us.
7. By default dummy cycle value. Please refer to the "Table 1. Read performance Comparison".
8. Latency time is required to complete Erase/Program Suspend operation until WIP bit is "0".
9. For tPRS, minimum timing must be observed before issuing the next program suspend command. However, a
period equal to or longer than the typical timing is required in order for the program operation to make progress.
10. For tERS, minimum timing must be observed before issuing the next erase suspend command. However, a
period equal to or longer than the typical timing is required in order for the erase operation to make progress.
P/N: PM2006
120
Rev. 1.6, July 27, 2017
MX25L51245G
13. OPERATING CONDITIONS
At Device Power-Up and Power-Down
AC timing illustrated in "Figure 119. AC Timing at Device Power-Up" and "Figure 120. Power-Down Sequence" are
for the supply voltages and the control signals at device power-up and power-down. If the timing in the figures is
ignored, the device will not operate correctly.
During power-up and power-down, CS# needs to follow the voltage applied on VCC to keep the device not to be
selected. The CS# can be driven low when VCC reach Vcc(min.) and wait a period of tVSL.
Figure 119. AC Timing at Device Power-Up
VCC
VCC(min)
GND
tVR
tSHSL
CS#
tSLCH
tCHSL
tCHSH
tSHCH
SCLK
tDVCH
tCHCL
tCHDX
LSB IN
MSB IN
SI
High Impedance
SO
Symbol
tVR
tCLCH
Parameter
VCC Rise Time
Notes
1
Min.
Max.
500000
Unit
us/V
Notes:
1. Sampled, not 100% tested.
2. For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the figure, please refer to
Table 18. AC CHARACTERISTICS.
P/N: PM2006
121
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 120. Power-Down Sequence
During power-down, CS# needs to follow the voltage drop on VCC to avoid mis-operation.
VCC
CS#
SCLK
Figure 121. Power-up Timing
VCC
VCC(max)
Chip Selection is Not Allowed
VCC(min)
tVSL
Device is fully accessible
VWI
time
P/N: PM2006
122
Rev. 1.6, July 27, 2017
MX25L51245G
Figure 122. Power Up/Down and Voltage Drop
For Power-down to Power-up operation, the VCC of flash device must below VPWD for at least tPWD timing. Please
check the table below for more detail.
VCC
VCC (max.)
Chip Select is not allowed
VCC (min.)
tVSL
Full Device
Access
Allowed
VPWD (max.)
tPWD
Time
Table 19. Power-Up/Down Voltage and Timing
Symbol
tVSL
VWI
VPWD
tPWD
VCC
Parameter
VCC(min.) to device operation
Write Inhibit Voltage
VCC voltage needed to below VPWD for ensuring initialization will occur
The minimum duration for ensuring initialization will occur
VCC Power Supply
Min.
3000
1.5
300
2.7
Max.
2.5
0.9
3.6
Unit
us
V
V
us
V
Note: These parameters are characterized only.
13-1. INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status
Register contains 00h (all Status Register bits are 0).
P/N: PM2006
123
Rev. 1.6, July 27, 2017
MX25L51245G
14. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ. (1)
Min.
Write Status Register Cycle Time
Max. (2)
Unit
40
ms
Sector Erase Cycle Time (4KB)
30
400
ms
Block Erase Cycle Time (32KB)
0.15
1
s
Block Erase Cycle Time (64KB)
0.28
2
s
Chip Erase Cycle Time
140
200
s
Byte Program Time (via page program command)
25
60
us
0.25
0.75
ms
Page Program Time
Erase/Program Cycle
100,000
cycles
Notice:
1. Typical program and erase time assumes the following conditions: 25°C, 3.3V, and checkerboard pattern.
2. Under worst conditions of 85°C and 2.7V.
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming
command.
4. The maximum chip programming time is evaluated under the worst conditions of 0°C, VCC=3.3V, and 100K
cycle with 90% confidence level.
15. ERASE AND PROGRAMMING PERFORMANCE (Factory Mode)
Parameter
Min.
Typ.
Max.
Unit
Sector Erase Cycle Time (4KB)
18
ms
Block Erase Cycle Time (32KB)
100
ms
Block Erase Cycle Time (64KB)
200
ms
Chip Erase Cycle Time
100
s
Page Program Time
0.16
ms
Erase/Program Cycle
50
cycles
Notice:
1. Factory Mode must be operated in 20°C to 45°C and VCC 3.0V-3.6V.
2. In Factory mode, the Erase/Program operation should not exceed 50 cycles, and "ERASE AND PROGRAMMING
PERFORMANCE" 100k cycles will not be affected.
3. During factory mode, Suspend command (B0) cannot be executed.
P/N: PM2006
124
Rev. 1.6, July 27, 2017
MX25L51245G
16. DATA RETENTION
Parameter
Condition
Min.
Data retention
55˚C
20
Max.
Unit
years
17. LATCH-UP CHARACTERISTICS
Min.
Max.
Input Voltage with respect to GND on all power pins, SI, CS#
-1.0V
2 VCCmax
Input Voltage with respect to GND on SO
-1.0V
VCC + 1.0V
-100mA
+100mA
Current
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
P/N: PM2006
125
Rev. 1.6, July 27, 2017
MX25L51245G
18. ORDERING INFORMATION
Please contact Macronix regional sales for the latest product selection and available form factors.
PART NO.
TEMPERATURE
PACKAGE
MX25L51245GMI-10G
-40°C to 85°C
16-SOP (300mil)
MX25L51245GZ2I-10G
-40°C to 85°C
8-WSON (8x6mm)
MX25L51245GXDI-10G
-40°C to 85°C
24-Ball BGA
(5x5 ball array)
MX25L51245GMI-08G
-40°C to 85°C
16-SOP (300mil)
Support Factory Mode
MX25L51245GZ2I-08G
-40°C to 85°C
8-WSON (8x6mm)
Support Factory Mode
MX25L51245GXDI-08G
-40°C to 85°C
24-Ball BGA
(5x5 ball array)
Support Factory Mode
P/N: PM2006
126
Remark
Rev. 1.6, July 27, 2017
MX25L51245G
19. PART NAME DESCRIPTION
MX 25
L 51245G Z2
I
10 G
OPTION:
G: RoHS Compliant & Halogen-free
Factory Mode:
10: Not support
08: Support
TEMPERATURE RANGE:
I: Industrial (-40°C to 85°C)
PACKAGE:
M: 16-SOP (300mil)
Z2: 8-WSON (8x6mm)
XD: 24-Ball BGA (5x5 ball array)
DENSITY & MODE:
51245G: 512Mb
TYPE:
L: 3V
DEVICE:
25: Serial NOR Flash
P/N: PM2006
127
Rev. 1.6, July 27, 2017
MX25L51245G
20. PACKAGE INFORMATION
20-1. 16-pin SOP (300mil)
P/N: PM2006
128
Rev. 1.6, July 27, 2017
MX25L51245G
20-2. 8-land WSON (8x6mm)
P/N: PM2006
129
Rev. 1.6, July 27, 2017
MX25L51245G
20-3. 24-Ball BGA (5x5 ball array)
P/N: PM2006
130
Rev. 1.6, July 27, 2017
MX25L51245G
21. REVISION HISTORY
Revision No. Description
0.01
1. Modified 16-PIN SOP
2. Updated parameters for AC Characteristics
3. Content correction
4. Modified VCC to Ground Potential parameter
5. Corrected Figure 42~51
Page
P7
P112
P88~94,116
P109
P54~58
Date
JAN/06/2014
1.0
1. Removed "Preliminary"
All
JUN/25/2014
2. Modified Quad I/O DTR Read from 83MHz to 100MHz
P6,37
3. Added "Figure 4. Output Timing (DTR mode)" P14
4. Updated parameters for DC/AC Characteristics
P111,112
5. Updated Erase and Programming Performance
P116
1.1
1. Revised page program cycle time
P112,116
1.2
1. Updated SFDP table from Rev. 1.0 to Rev. 1.6
2. Updated Write Inhibit Voltage
3. Added Suspend/Resume symbols and values
4. Description modification
5. Updated tSE
6. Updated Min. tVSL to 3000us
7. Updated Block Diagram
8. Modified tCH/tCL formula.
9. Modified Max. Page Program Cycle Time (n bytes)
P102-113
AUG/03/2015
P124
P97-99,120,121
P29,35,85-95
P120,125
P124
P8
P120
P120
1.3
1. Added MX25L51245GMI-08G, MX25L51245GZ2I-08G and
MX25L51245GXDI-08G Part No.
2. Added Factory Mode information
3. Added a statement for product ordering information
4. Content correction
P128,129
1.4
1.5
1. Revised the descriptions of erase/program cycle
P126
in Factory Mode.
2. Updated tVR descriptions.
P123,125
3. Content modification.
P55-59
4. Updated tCH/tCL/tCE/tBP values.
P121, 126
5. Updated "20-2. 8-land WSON (8x6mm)". P131
SEP/12/2016
1. Updated the Max. tBP from 40 to 60us.
P119, 124
2. Updated tCLQV and tCLQX descriptions.
P119
3. Revised the descriptions of "9-11. Enter 4-byte mode (EN4B)". P43
4. Updated Performance Enhance Mode Reset descriptions.
P66-70
5. Modified the descriptions of "9-25. Burst Read". P71
6. Updated the note for the internal pull up status of RESET#
P7
and WP#/SIO2 pins.
NOV/21/2016
JUL/09/2014
FEB/18/2016
P21,26,27,126
P128
P7
1.6
1. Added tCHDX & tCLQV descriptions for VCC=3.0V-3.6V P119
2. Added "Figure 118. SCLK TIMING DEFINITION" P117
3. Modified "19. PART NAME DESCRIPTION" P127
4. Format modification.
P128-130
P/N: PM2006
131
JUL/27/2017
Rev. 1.6, July 27, 2017
MX25L51245G
Except for customized products which has been expressly identified in the applicable agreement, Macronix's
products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or
household applications only, and not for use in any applications which may, directly or indirectly, cause death,
personal injury, or severe property damages. In the event Macronix products are used in contradicted to their
target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its
actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/or
distributors shall be released from any and all liability arisen therefrom.
Copyright© Macronix International Co., Ltd. 2013-2017. All rights reserved, including the trademarks and
tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, Nbit,
Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, HybridXFlash, XtraROM, Phines, KH Logo, BE-SONOS,
KSMC, Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Book, Rich TV, OctaRAM, OctaBus, OctaFlash
and FitCAM. The names and brands of third party referred thereto (if any) are for identification purposes only.
For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.
132
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