MX25LM51245GXDI00

MX25LM51245G MX25LM51245G 3V 512M-BIT [x 1/x 8] CMOS octaflash Memory Key Features • Protocol Support - Single I/O and Octa I/O • Support DTR (Double Transfer Rate) Mode • Support clock frequency up to 133MHz Macronix Proprietary Rev. 1.1, June 04, 2020 MX25LM51245G Contents 1. FEATURES............................................................................................................................................................... 5 2. GENERAL DESCRIPTION...................................................................................................................................... 7 Table 1. Operating Frequency Comparison.................................................................................................7 3. PIN CONFIGURATIONS .......................................................................................................................................... 8 Table 2. PIN DESCRIPTION........................................................................................................................8 4. BLOCK DIAGRAM.................................................................................................................................................... 9 5. MEMORY ORGANIZATION.................................................................................................................................... 10 6. DATA PROTECTION............................................................................................................................................... 11 6-1. Block lock protection................................................................................................................................. 12 Table 3. Protected Area Sizes....................................................................................................................12 6-2. Additional 8K-bit secured OTP ................................................................................................................. 13 Table 4. Secured OTP Definition................................................................................................................13 7. DEVICE OPERATION............................................................................................................................................. 14 8. COMMAND SET..................................................................................................................................................... 16 8-1. SPI Command Set.................................................................................................................................... 16 Table 5. Read/Write Array Commands (SPI - 3 Byte Address Command Set)..........................................16 Table 6. Read/Write Array Commands (SPI - 4 Byte Address Command Set)..........................................16 Table 7. Setting Commands (SPI)..............................................................................................................17 Table 8. Reset Commands (SPI)................................................................................................................17 Table 9. Register Commands (SPI)............................................................................................................18 8-2. OPI Command Set.................................................................................................................................... 20 Table 10. Read/Write Array Commands (OPI)...........................................................................................20 Table 11. Setting Commands (OPI)............................................................................................................21 Table 12. Reset Commands (OPI).............................................................................................................21 Table 13. Register Commands (OPI).........................................................................................................22 9. REGISTER DESCRIPTION..................................................................................................................................... 24 9-1. 9-2. 9-3. 9-4. Status Register......................................................................................................................................... 24 Configuration Register.............................................................................................................................. 25 Configuration Register 2........................................................................................................................... 26 Security Register...................................................................................................................................... 29 Table 14. Security Register Definition........................................................................................................29 10. COMMAND DESCRIPTION.................................................................................................................................. 30 10-1. Write Enable (WREN)............................................................................................................................... 30 10-2. Write Disable (WRDI)................................................................................................................................ 31 10-3. Read Identification (RDID)........................................................................................................................ 32 Table 15. ID Definitions .............................................................................................................................32 10-4. Read Status Register (RDSR).................................................................................................................. 33 10-5. Read Configuration Register (RDCR)....................................................................................................... 36 10-6. Write Status Register (WRSR) / Write Configuration Register (WRCR)................................................... 37 10-7. Read Configuration Register 2 (RDCR2).................................................................................................. 40 10-8. Write Configuration Register 2 (WRCR2).................................................................................................. 41 P/N: PM2357 Macronix Proprietary 2 Rev. 1.1, June 04, 2020 MX25LM51245G 10-9. Read Security Register (RDSCUR).......................................................................................................... 42 10-10. Write Security Register (WRSCUR).......................................................................................................... 43 10-11. Read Data Bytes (READ/READ3B/READ4B).......................................................................................... 44 10-12. Read Data Bytes at Higher Speed (FAST_READ/FAST_READ3B/FAST_READ4B).............................. 45 10-13. OCTA Read Mode (8READ)..................................................................................................................... 46 10-14. OCTA DTR Read Mode (8DTRD)............................................................................................................. 47 10-15. Preamble Bit............................................................................................................................................. 48 10-16. Burst Read................................................................................................................................................ 49 10-17. Fast Boot.................................................................................................................................................. 50 10-18. Sector Erase (SE/SE3B/SE4B)................................................................................................................ 55 10-19. Block Erase (BE/BE3B/BE4B).................................................................................................................. 56 10-20. Chip Erase (CE)........................................................................................................................................ 57 10-21. Page Program (PP/PP3B/PP4B).............................................................................................................. 58 10-22. Deep Power-down (DP)............................................................................................................................ 60 10-23. Enter Secured OTP (ENSO)..................................................................................................................... 61 10-24. Exit Secured OTP (EXSO)........................................................................................................................ 61 10-25. Write Protection Selection (WPSEL)......................................................................................................... 62 10-26. Advanced Sector Protection..................................................................................................................... 63 10-27. Program Suspend and Erase Suspend.................................................................................................... 78 Table 16. Acceptable Commands During Suspend...................................................................................79 10-28. Program Resume and Erase Resume...................................................................................................... 80 10-29. No Operation (NOP)................................................................................................................................. 81 10-30. Software Reset (Reset-Enable (RSTEN) and Reset (RST)).................................................................... 81 11. Serial Flash Discoverable Parameter (SFDP)................................................................................................... 83 11-1. Read SFDP Mode (RDSFDP)................................................................................................................... 83 Table 17. Signature and Parameter Identification Data Values..................................................................84 12. Data Integrity check............................................................................................................................................ 85 12-1. ECC (Error Checking and Correcting)...................................................................................................... 85 Table 18. 16-Byte Chunks within a Page...................................................................................................85 12-2. ECS# (Error corrected Signal) Pin............................................................................................................ 86 12-3. Parity Check (CRC1)................................................................................................................................ 87 13. RESET.................................................................................................................................................................. 89 Table 19. Reset Timing-(Standby)..............................................................................................................89 Table 20. Reset Timing-(Other Operation).................................................................................................89 14. POWER-ON STATE.............................................................................................................................................. 90 15. ELECTRICAL SPECIFICATIONS......................................................................................................................... 91 Table 21. ABSOLUTE MAXIMUM RATINGS.............................................................................................91 Table 22. CAPACITANCE TA = 25°C, f = 1.0 MHz.....................................................................................91 Table 23. DC CHARACTERISTICS...........................................................................................................93 Table 24. AC CHARACTERISTICS............................................................................................................94 16. OPERATING CONDITIONS.................................................................................................................................. 96 Table 25. Power-Up/Down Voltage and Timing .........................................................................................98 P/N: PM2357 Macronix Proprietary 3 Rev. 1.1, June 04, 2020 MX25LM51245G 16-1. INITIAL DELIVERY STATE....................................................................................................................... 98 17. ERASE AND PROGRAMMING PERFORMANCE............................................................................................... 99 18. DATA RETENTION............................................................................................................................................... 99 19. LATCH-UP CHARACTERISTICS......................................................................................................................... 99 20. ORDERING INFORMATION............................................................................................................................... 100 21. PART NAME DESCRIPTION.............................................................................................................................. 101 22. PACKAGE INFORMATION................................................................................................................................. 102 23. REVISION HISTORY .......................................................................................................................................... 104 P/N: PM2357 Macronix Proprietary 4 Rev. 1.1, June 04, 2020 MX25LM51245G 3V 512M-BIT [x 1/x 8] CMOS octaflash Memory 1. FEATURES GENERAL • Supports Serial Peripheral Interface -- Mode 0 • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 512Mb: 536,870,912 x 1 bit structure or 67,108,864 x 8 bits (Octa I/O mode) structure • Protocol Support - Single I/O and Octa I/O - Support DTR (Double Transfer Rate) Mode • Fast frequency support - Support clock frequency up to - Single I/O mode: 133MHz - Octa I/O mode: 133MHz - Configurable dummy cycle number for OPI read operation • Octa Peripheral Interface (OPI) available • Equal Sectors with 4K byte each, or Equal Blocks with 64K byte each - Any Block can be erased individually • Programming : - 256byte page buffer - Octa Input/Output page program to enhance program performance • Typical 100,000 erase/program cycles • 20 years data retention SOFTWARE FEATURES • Input Data Format - SPI: 1-byte command code - OPI: 2-byte command code • Advanced Security Features - Block lock protection The BP0-BP3 and T/B status bits define the size of the area to be protected against program and erase instructions - Advanced Sector Protection (Solid and Password Protect) • Additional 8K bit security OTP - Features unique identifier - Factory locked identifiable, and customer lockable • Command Reset • Program/Erase Suspend and Resume operation • Electronic Identification - JEDEC 1-byte manufacturer ID and 2-byte device ID • Support Serial Flash Discoverable Parameters (SFDP) mode P/N: PM2357 Macronix Proprietary 5 Rev. 1.1, June 04, 2020 MX25LM51245G HARDWARE FEATURES • SCLK Input - Serial clock input • SIO0 - SIO7 - Serial Data Input or Serial Data Output • DQS - Data strobe signal • RESET# - Hardware Reset pin • PACKAGE - 24-Ball BGA (5x5 ball array) - 16-Pin SOP -All devices are RoHS Compliant and Halogen Free. P/N: PM2357 Macronix Proprietary 6 Rev. 1.1, June 04, 2020 MX25LM51245G 2. GENERAL DESCRIPTION MX25LM51245G is 512Mb bits Octal interface Serial NOR Flash memory, which is configured as 67,108,864 x 8 internally. MX25LM51245G feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus while it is in single I/O mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input. The MX25LM51245G octaflash provides sequential read operation on whole chip. After program/erase command is issued, auto program/erase algorithms which program/erase and verify the specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256 bytes) basis, or word basis. Erase command is executed on sector (4K-byte), or block (64K-byte), or whole chip basis. To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read command can be issued to detect completion status of a program or erase operation via WIP bit. When the device is not in operation and CS# is high, it is put in standby mode. The MX25LM51245G utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after 100,000 program and erase cycles. Table 1. Operating Frequency Comparison Numbers of Dummy Cycle 6 8 10 12 14 16 18 20 Octa I/O STR (MHz) 66 84 104 104 133 133 133 133* Octa I/O DTR (MHz) 66 84 104 104 133 133 133 133* Notes: * means default status P/N: PM2357 Macronix Proprietary 7 Rev. 1.1, June 04, 2020 MX25LM51245G 3. PIN CONFIGURATIONS 16-PIN SOP (300mil) SIO3 VCC RESET# SIO7 SIO5 GND CS# SO/SIO1 1 2 3 4 5 6 7 8 Table 2. PIN DESCRIPTION SCLK SI/SIO0 SIO4 DQS SIO6 VCC GND SIO2 16 15 14 13 12 11 10 9 SYMBOL CS# SCLK RESET# ECS# DQS SI/SIO0 24-BALL BGA (5x5 ball array) 1 2 3 4 SO/SIO1 5 SIO2-SIO7 VCC VCCQ GND VSSQ NC DNU A B C D E P/N: PM2357 DNU NC NC RESET# ECS# SCLK GND VCC DNU VSSQ CS# DQS SIO2 NC VCCQ SIO1 SIO0 SIO3 SIO4 SIO7 SIO6 SIO5 VCCQ VSSQ DESCRIPTION Chip Select Clock Input Hardware Reset Pin Active lowNote 1 ECC Correction Signal (open drain) Data Strobe Signal Serial Data Input (for 1 x I/O)/ Serial Data Input & Output (for 8 x I/O read mode) Serial Data Output (for 1 x I/O)/ Serial Data Input & Output (for 8 x I/O read mode) Serial Data Input & Output (for 8 x I/O read mode) 3V Power Supply 3V Buffer Power Supply Ground IO Ground Supply No Connection Do Not Use Note 1: The pin of RESET# will remain internal pull up function while this pin is not physically connected in system configuration. However, the internal pull up function will be disabled if the system has physical connection to RESET# pin. Macronix Proprietary 8 Rev. 1.1, June 04, 2020 MX25LM51245G 4. BLOCK DIAGRAM SIO3 SIO4 SIO5 SIO6 SIO7 RESET# CS# DQS ECS# SCLK X-Decoder SI/SIO0 SO/SIO1 SIO2 Address Generator Memory Array Y-Decoder Data Register Sense Amplifier SRAM Buffer Mode Logic State Machine HV Generator Clock Generator Output Buffer P/N: PM2357 Macronix Proprietary 9 Rev. 1.1, June 04, 2020 MX25LM51245G 5. MEMORY ORGANIZATION Address Range 3FFF000h … … 16383 3FF8FFFh 3FF7000h 3FF7FFFh 3FF0000h 3FF0FFFh 16367 3FEF000h 3FEFFFFh … 16360 3FE8000h 3FE8FFFh 16359 3FE7000h 3FE7FFFh … 3FE0000h 3FE0FFFh 16351 3FDF000h 3FDFFFFh … 16344 3FD8000h 3FD8FFFh 16343 3FD7000h 3FD7FFFh 16336 … … … 16352 … 1021 … … … 16368 … 1022 … 3FF8000h 16375 … 16376 … 1023 3FFFFFFh … Sector … Block(64K-byte) 3FD0000h 3FD0FFFh ∼ … 0028FFFh 027000h 0027FFFh 0020FFFh 001F000h 001FFFFh … 0018000h 0018FFFh 23 0017000h 0017FFFh P/N: PM2357 … … 24 000FFFFh 0008000h 0008FFFh 7 0007000h 0007FFFh … 8 … … 0010FFFh 000F000h … 0010000h 15 … 16 … 0 … 0020000h 31 … 32 … 1 … 0028000h 39 … 40 … 2 002FFFFh … 002F000h … 47 0 0000000h 0000FFFh Macronix Proprietary 10 Rev. 1.1, June 04, 2020 MX25LM51245G 6. DATA PROTECTION During power transition, there may be some false system level signals which result in inadvertent erasure or programming. The device is designed to protect itself from these accidental write cycles. The state machine will be reset as standby mode automatically during power up. In addition, the control register architecture of the device constrains that the memory contents can only be changed after specific command sequences have completed successfully. In the following, there are several features to protect the system from the accidental write cycles during VCC powerup and power-down or from system noise. • Valid command length (SPI Mode) or command/command# combination (OPI Mode) will be check. • Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before other command to change data. • Deep Power Down Mode: By entering deep power down mode, the flash device also is under protected from writing all commands except Release from deep power down mode command (RDP), and softreset command. P/N: PM2357 Macronix Proprietary 11 Rev. 1.1, June 04, 2020 MX25LM51245G 6-1. Block lock protection - The Software Protected Mode (SPM) use (BP3, BP2, BP1, BP0 and T/B) bits to allow part of memory to be protected as read only. The protected area definition is shown as Table 3 Protected Area Sizes, the protected areas are more flexible which may protect various area by setting value of BP0-BP3 bits. Table 3. Protected Area Sizes Protected Area Sizes (T/B bit = 0) Status bit BP3 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 BP2 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 BP1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 BP0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 Protect Level 512Mb 0 (none) 1 (1 block, protected block 1023rd) 2 (2 blocks, protected block 1022nd~1023rd) 3 (4 blocks, protected block 1020th~1023rd) 4 (8 blocks, protected block 1016th~1023rd) 5 (16 blocks, protected block 1008th~1023rd) 6 (32 blocks, protected block 992nd~1023rd) 7 (64 blocks, protected block 960th~1023rd) 8 (128 blocks, protected block 896th~1023rd) 9 (256 blocks, protected block 768th~1023rd) 10 (512 blocks, protected block 512nd~1023rd) 11 (1024 blocks, protected all) 12 (1024 blocks, protected all) 13 (1024 blocks, protected all) 14 (1024 blocks, protected all) 15 (1024 blocks, protected all) Protected Area Sizes (T/B bit = 1) Status bit BP3 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 P/N: PM2357 BP2 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 BP1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 Protect Level BP0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 512Mb 0 (none) 1 (1 block, protected block 0th) 2 (2 blocks, protected block 0th~1st) 3 (4 blocks, protected block 0th~3rd) 4 (8 blocks, protected block 0th~7th) 5 (16 blocks, protected block 0th~15th) 6 (32 blocks, protected block 0th~31st) 7 (64 blocks, protected block 0th~63rd) 8 (128 blocks, protected block 0th~127th) 9 (256 blocks, protected block 0th~255th) 10 (512 blocks, protected block 0th~511th) 11 (1024 blocks, protected all) 12 (1024 blocks, protected all) 13 (1024 blocks, protected all) 14 (1024 blocks, protected all) 15 (1024 blocks, protected all) Macronix Proprietary 12 Rev. 1.1, June 04, 2020 MX25LM51245G 6-2. Additional 8K-bit secured OTP The secured OTP for unique identifier: to provide 8K-bit one-time program area for setting device unique serial number. Which may be set by factory or system customer. - Security register bit 0 indicates whether the chip is locked by factory or not. - To program the 8K-bit secured OTP by entering secured OTP mode (with Enter Security OTP command), and going through normal program procedure, and then exiting secured OTP mode by writing Exit Security OTP command. - Customer may lock-down the customer lockable secured OTP by writing WRSCUR(write security register) command to set customer lock-down bit1 as "1". Please refer to "Table 14. Security Register Definition" for security register bit definition and "Table 4. Secured OTP Definition" for address range definition. - Note: Once lock-down by factory or customer, the corresponding range cannot be changed any more. While in secured OTP mode, array access is not allowed. Table 4. Secured OTP Definition Address range Size Lock-down xxx000~xxx1FF 4096-bit Determined by Customer xxx200~xxx3FF 4096-bit Determined by Factory P/N: PM2357 Macronix Proprietary 13 Rev. 1.1, June 04, 2020 MX25LM51245G 7. DEVICE OPERATION 1. Before a command is issued, status register should be checked to ensure device is ready for the intended operation. 2. When incorrect command# sequence is inputted to this device, this device becomes standby mode and keeps the standby mode until next CS# falling edge. In standby mode, SO pin of this device should be High-Z. 3. When correct command# sequence is inputted to this device, this device becomes active mode and keeps the active mode until next CS# rising edge. 4. When device under STR mode, input data is latched on the rising edge of Serial Clock (SCLK) and data shifts out on the falling edge of SCLK. When device under DTR mode, input data is latched on the both rising and falling edge of Serial Clock (SCLK) and data shifts out on both rising and falling edge of SCLK. 5. While a Write Status Register, Program or Erase operation is in progress, access to the memory array is neglected and not affect the current operation of Write Status Register, Program, Erase. Figure 1. Input Timing (STR mode) tSHSL CS# tCHSL tSLCH tCHSH tSHCH SCLK tDVCH tCHCL tCHDX SI tCLCH LSB MSB High-Z SO Figure 2. Input Timing (DTR mode) tSHSL CS# tCHSL tSLCH tSHCH tCLSH SCLK tDVCH tCHDX SIO P/N: PM2357 tCHCL tCLDX tDVCL MSB tCLCH LSB Macronix Proprietary 14 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 3. Output Timing (STR mode) CS# tCH SCLK tCLQV tCLQX tCL tCLQV tSHQZ tCLQX LSB SIO Figure 4. Output Timing (DTR mode) SCLK tCHQV DQS tCLQV tQSV tDQSQ tDQSQ tQH tQH SIO[7:0] P/N: PM2357 Macronix Proprietary 15 Rev. 1.1, June 04, 2020 MX25LM51245G 8. COMMAND SET 8-1. SPI Command Set Table 5. Read/Write Array Commands (SPI - 3 Byte Address Command Set) Command (byte) READ3B (normal read) FAST_READ3B (fast read data) PP3B (page program) SE3B (sector erase) Address Bytes 1st byte 3 03 (hex) 3 0B (hex) 3 02 (hex) 3 20 (hex) BE3B (block erase 64KB) 3 D8 (hex) 2nd byte ADD1 ADD1 ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 ADD2 ADD2 4th byte ADD3 ADD3 ADD3 ADD3 ADD3 to erase the selected sector to erase the selected block 60 or C7 (hex) Dummy(8)(Note 3) 5th byte Data Cycles Action CE (chip erase) 1-256 n bytes read out until CS# goes high n bytes read out until CS# goes high to program the selected page to erase whole chip Table 6. Read/Write Array Commands (SPI - 4 Byte Address Command Set) Address Bytes 4 4 4 4 BE4B (block erase 64KB) 4 1st byte 13 (hex) 0C (hex) 12 (hex) 21 (hex) DC (hex) 2nd byte ADD1 ADD1 ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 ADD2 ADD2 4th byte ADD3 ADD3 ADD3 ADD3 ADD3 5th byte ADD4 ADD4 ADD4 ADD4 ADD4 1-256 to program the selected page to erase the selected sector to erase the selected block Command (byte) READ4B (normal read) FAST_READ4B (fast read data) 6th byte P/N: PM2357 SE4B (sector erase) (Note 3) Dummy(8) Data Cycles Action PP4B (page program) n bytes read out until CS# goes high n bytes read out until CS# goes high Macronix Proprietary 16 Rev. 1.1, June 04, 2020 MX25LM51245G Table 7. Setting Commands (SPI) Command (byte) WREN (write enable) WRDI (write disable) 1st byte 06 (hex) 04 (hex) PGM/ERS Suspend PGM/ERS Resume (Suspends Program/ (Resumes Program/ Erase) Erase) B0 (hex) 30 (hex) DP (Deep power down) B9 (hex) 2nd byte 3rd byte 4th byte 5th byte Data Cycles sets the (WEL) write resets the (WEL) enable latch bit write enable latch bit enters deep power down mode Action Command (byte) 1st byte SBL (Set Burst Length) C0 (hex) ENSO (enter secured OTP) B1 (hex) EXSO (exit secured OTP) C1 (hex) to enter the 8K-bit secured OTP mode to exit the 8K-bit secured OTP mode 2nd byte 3rd byte 4th byte 5th byte Data Cycles 1 to set Burst length Action Table 8. Reset Commands (SPI) Command (byte) 1st byte NOP (No Operation) 00 (hex) RSTEN (Reset Enable) 66 (hex)(Note 2) RST (Reset Memory) 99 (hex)(Note 2) 2nd byte 3rd byte 4th byte 5th byte Action P/N: PM2357 Macronix Proprietary 17 Rev. 1.1, June 04, 2020 MX25LM51245G Table 9. Register Commands (SPI) Command (byte) RDID (read identification) RDSFDP RDSR (read status register) 1st byte 9F (hex) 5A (hex) 05 (hex) RDCR (read configuration register) 15 (hex) WRSR (write status/ configuration register) 01 (hex) RDCR 2 (read configuration register 2) 71 (hex) WRCR2 (Write configuration register 2 ) 72 (hex) 2nd byte ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 4th byte ADD3 5th byte Data Cycles Action Command (byte) 1st byte outputs JEDEC ID: 1-byte Manufacturer ID & 2-byte Device ID Read SFDP mode 1 1 to read out the to read out the values of the values of the status register configuration register RDFBR WRFBR ESFBR (read fast boot (write fast boot (erase fast register) register) boot register) 16 (hex) 17 (hex) 18 (hex) 1-2 to write new values of the status/ configuration register RDSCUR WRSCUR (read security (write security register) register) 2B (hex) 2F (hex) ADD3 ADD3 ADD4 ADD4 1 1 WRLR (write Lock register) 2C (hex) RDLR (read Lock register) 2D (hex) 1 1 2nd byte 3rd byte 4th byte 5th byte Data Cycles 1-4 4 to read value to set the lockof security down bit as register "1" (once lockdown, cannot be updated) Action Address Bytes WRSPB (SPB bit program) 4 ESSPB (all SPB bit erase) 0 RDSPB (read SPB status) 4 WRDPB (write DPB register) 4 E4 (hex) Command (byte) RDDPB WPSEL GBLK (read DPB (Write Protect (gang block register) Selection) lock) 4 0 1st byte E3 (hex) E2 (hex) E1 (hex) E0 (hex) 2nd byte ADD1 ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 ADD2 4th byte ADD3 ADD3 ADD3 ADD3 5th byte ADD4 ADD4 ADD4 ADD4 1 1 1 Data Cycles 7E (hex) to enter and whole chip enable write protect individal block protect mode Action P/N: PM2357 68 (hex) Macronix Proprietary 18 GBULK (gang block unlock) 0 98 (hex) whole chip unprotect Rev. 1.1, June 04, 2020 MX25LM51245G RDPASS WRPASS (read password (write password register) register) Mode SPI SPI Address Bytes 4 4 Command (byte) PASSULK (password unlock) SPI 4 1st byte 27 (hex) 28 (hex) 29 (hex) 2nd byte 00h 00h 00h 3rd byte 00h 00h 00h 4th byte 00h 00h 00h 00h 00h 8 8 5th byte 00h 6th byte Dummy(8)(Note 3) Data Cycles 8 Action Note 1: It is not recommended to adopt any other code/address not in the command definition table, which will potentially enter the hidden mode. Note 2: The RSTEN command must be executed before executing the RST command. If any other command is issued in-between RSTEN and RST, the RST command will be ignored. Note 3: The number in parentheses after “ADD” or “Data” or “Dummy” stands for how many clock cycles it has. For example, "Data(8)" represents there are 8 clock cycles for the data in. P/N: PM2357 Macronix Proprietary 19 Rev. 1.1, June 04, 2020 MX25LM51245G 8-2. OPI Command Set Table 10. Read/Write Array Commands (OPI) Command (byte) 1st byte 8READ (Octa IO Read) EC (hex) 8DTRD (Octa IO DT Read) EE (hex) RDID (read identification) 9F (hex) 2nd byte 13 (hex) 11 (hex) 60 (hex) A5 (hex) 3rd byte ADD1 ADD1 00h ADD1 4th byte ADD2 ADD2 00h ADD2 5th byte ADD3 ADD3 00h ADD3 6th byte ADD4 7th byte Dummy(Note 4) Data Cycles Octa I/O STR read Action ADD4 (Note 6) 00h Dummy(Note 4) RDSFDP 5A (hex) ADD4 Dummy(20) 3 (Note 8) Octa I/O DTR read outputs JEDEC ID: 1-byte Manufacturer ID & 2-byte Device ID Read SFDP mode Command (byte) 1st byte PP (page program) 12 (hex) SE (sector erase) 21 (hex) BE (block erase 64KB) DC (hex) CE (chip erase) 60 or C7 (hex) 2nd byte ED (hex) DE (hex) 23 (hex) 9F or 38 (hex) 3rd byte ADD1 ADD1 ADD1 4th byte ADD2 ADD2 ADD2 5th byte ADD3 ADD3 ADD3 6th byte ADD4(Note 6) ADD4 ADD4 7th byte Data Cycles Action P/N: PM2357 1-256 to program the selected page to erase the selected to erase the selected to erase whole chip sector block Macronix Proprietary 20 Rev. 1.1, June 04, 2020 MX25LM51245G Table 11. Setting Commands (OPI) Command (byte) WREN (write enable) PGM/ERS Suspend PGM/ERS Resume (Suspends Program/ (Resumes Program/ Erase) Erase) B0 (hex) 30 (hex) WRDI (write disable) 1st byte 06 (hex) 04 (hex) 2nd byte F9 (hex) FB (hex) 4F (hex) CF (hex) DP (Deep power down) B9 (hex) 46 (hex) 3rd byte 4th byte 5th byte 6th byte 7th byte sets the (WEL) write resets the (WEL) enable latch bit write enable latch bit enters deep power down mode Action Command (byte) 1st byte SBL (Set Burst Length) C0 (hex) ENSO (enter secured OTP) B1 (hex) EXSO (exit secured OTP) C1 (hex) 2nd byte 3F (hex) 4E (hex) 3E (hex) 3rd byte 00h 4th byte 00h 5th byte 00h 6th byte 00h 7th byte 1 to enter the 8K-bit secured OTP mode to exit the 8K-bit secured OTP mode to set Burst length Action Table 12. Reset Commands (OPI) Command (byte) 1st byte NOP (No Operation) 00 (hex) RSTEN (Reset Enable) 66 (hex)(Note 2) RST (Reset Memory) 99 (hex)(Note 2) 2nd byte FF (hex) 99 (hex) 66 (hex) 3rd byte 4th byte 5th byte 6th byte Action P/N: PM2357 Macronix Proprietary 21 Rev. 1.1, June 04, 2020 MX25LM51245G Table 13. Register Commands (OPI) Command (byte) RDSR (read status register) RDCR WRCR (write (read WRSR (write configuration configuration status register) register) register) 15 (hex) 01 (hex) 01 (hex) RDCR2 (read configuration register 2) 71 (hex) WRCR2 (Write configuration register 2 ) 72 (hex) RDFBR (read fast boot register) 1st byte 05 (hex) 2nd byte FA (hex) EA (hex) FE (hex) FE (hex) 8E (hex) 8D (hex) E9 (hex) 16 (hex) 3rd byte 00h 00h 00h 00h ADD1 ADD1 00h 4th byte 00h 00h 00h 00h ADD2 ADD2 00h 5th byte 00h 00h 00h 00h ADD3 ADD3 00h 00h 01h ADD4 ADD4 6th byte 00h 01h 7th byte Dummy(Note 5) Dummy(Note 5) Data bytes Action Command (byte) 1st byte 2nd byte 1 1 1 1 to read out the to read out the to write new to write new values of the values of the values of the values of the status register configuration status register configuration register register WRFBR ESFBR (write fast boot (erase fast register) boot register) 17 (hex) 18 (hex) E8 (hex) E7 (hex) 00h Dummy(Note 5) RDSCUR WRSCUR (read security (write security register) register) 2B (hex) 2F (hex) D4 (hex) D0 (hex) Dummy(Note 5) 1 1 1-4(Note 8) WRLR (write Lock register) 2C (hex) RDLR (read Lock register) 2D (hex) WRSPB (SPB bit program) E3 (hex) D3 (hex) D2 (hex) 1C (hex) 3rd byte 00h 00h 00h 00h ADD1 4th byte 00h 00h 00h 00h ADD2 5th byte 00h 00h 00h 00h ADD3 6th byte 00h 00h 00h 00h Dummy(Note 5) ADD4 1 1 Dummy 7th byte Data bytes (Note 5) 4 to read value to set the lockof security down bit as register "1" (once lockdown, cannot be updated) Action RDSPB (read SPB status) WRDPB (write DPB register) RDDPB (read DPB register) E4 (hex) E2 (hex) E1 (hex) E0 (hex) WPSEL (Write Protection Selection) 68 (hex) 1B (hex) 1D (hex) 1E (hex) 1F (hex) 97 (hex) Command (byte) ESSPB (all SPB bit erase) 1st byte 2nd byte 3rd byte ADD1 ADD1 ADD1 4th byte ADD2 ADD2 ADD2 5th byte ADD3 ADD3 ADD3 6th byte ADD4 ADD4 ADD4 7th byte Dummy(Note 4) Data bytes 1 GBULK (gang block unlock) 7E (hex) 98 (hex) 81 (hex) 67 (hex) Dummy(Note 4) 1 1 to enter and whole chip enable individal write protect block protect mode Action P/N: PM2357 GBLK (gang block lock) Macronix Proprietary 22 whole chip unprotect Rev. 1.1, June 04, 2020 MX25LM51245G Command (byte) 1st byte RDPASS WRPASS (read password (write password register) register) 27 (hex) 28 (hex) PASSULK (password unlock) 29 (hex) 2nd byte D8 (hex) D7 (hex) D6 (hex) 3rd byte 00h 00h 00h 4th byte 00h 00h 00h 5th byte 00h 00h 00h 6th byte 00h 00h 00h 8 8 7th byte Data bytes Dummy(20) 8 (Note 3) Action Note 1: It is not recommended to adopt any other code/address not in the command definition table, which will potentially enter the hidden mode. Note 2: The RSTEN command must be executed before executing the RST command. If any other command is issued in-between RSTEN and RST, the RST command will be ignored. Note 3: The number in parentheses after “ADD” or “Data” or “Dummy” stands for how many clock cycles it has. For example, "Data(8)" represents there are 8 clock cycles for the data in. Note 4: See dummy cycle and frequency table. Note 5: 4 dummy cycles in both STR/DTR. Note 6: The starting address must be even byte (A0 must be 0) in DTR OPI mode. Note 7: The address data must be 00h. Note 8: Data bytes are always output in STR. P/N: PM2357 Macronix Proprietary 23 Rev. 1.1, June 04, 2020 MX25LM51245G 9. REGISTER DESCRIPTION 9-1. Status Register The definition of the status register bits is as below: WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status register progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/write status register cycle. WEL bit. The Write Enable Latch (WEL) bit is a volatile bit that is set to “1” by the WREN instruction. WEL needs to be set to “1” before the device can accept program and erase instructions, otherwise the program and erase instructions are ignored. WEL automatically clears to “0” when a program or erase operation completes. To ensure that both WIP and WEL are “0” and the device is ready for the next program or erase operation, it is recommended that WIP be confirmed to be “0” before checking that WEL is also “0”. If a program or erase instruction is applied to a protected memory area, the instruction will be ignored and WEL will clear to “0”. BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits, non-volatile bits, indicate the protected area (as defined in Table 3) of the device to against the program/erase instruction without hardware protection mode being set. To write the Block Protect (BP3, BP2, BP1, BP0) bits requires the Write Status Register (WRSR) instruction to be executed. Those bits define the protected area of the memory to against Page Program (PP/PP3B/PP4B), Sector Erase (SE/SE3B/SE4B), Block Erase (BE/BE3B/BE4B) and Chip Erase (CE) instructions (only if Block Protect bits (BP3:BP0) set to 0, the CE instruction can be executed). The BP3, BP2, BP1, BP0 bits are "0" as default. Which is unprotected. Status Register bit7 Reserved bit6 Reserved bit5 BP3 (level of protected block) bit4 BP2 (level of protected block) bit3 BP1 (level of protected block) bit2 BP0 (level of protected block) Reserved Reserved (note 1) (note 1) (note 1) (note 1) Reserved Reserved Non-volatile bit Non-volatile bit Non-volatile bit Non-volatile bit bit1 bit0 WEL WIP (write enable (write in latch) progress bit) 1=write 1=write enable operation 0=not write 0=not in write enable operation volatile bit volatile bit Note 1: see the Table 3 "Protected Area Size". P/N: PM2357 Macronix Proprietary 24 Rev. 1.1, June 04, 2020 MX25LM51245G 9-2. Configuration Register The Configuration Register is able to change the default status of Flash memory. Flash memory will be configured after the CR bit is set. ODS bit The output driver strength (ODS2, ODS1, ODS0) bits are volatile bits, which indicate the output driver level (as defined in "Output Driver Strength Table") of the device. To write the ODS bits requires the Write Status Register (WRSR) instruction to be executed. TB bit The Top/Bottom (TB) bit is a non-volatile bit. The Top/Bottom (TB) bit is used to configure the Block Protect area by BP bit (BP3, BP2, BP1, BP0), starting from TOP or Bottom of the memory array. The TB bit is defaulted as “0”, which means Top area protect. When it is set as “1”, the protect area will change to Bottom area of the memory device. To write the TB bits requires the Write Status Register (WRSR) instruction to be executed. PBE bit The Preamble Bit Enable (PBE) bit is a volatile bit. It is used to enable or disable the preamble bit data pattern output on dummy cycles. The PBE bit is defaulted as “0”, which means preamble bit is disabled. When it is set as “1”, the preamble bit will be enabled, and inputted into dummy cycles. To write the PBE bits requires the Write Status Register (WRSR) instruction to be executed. Configuration Register bit7 bit6 bit5 Reserved Reserved Reserved x x x x x x bit4 bit3 bit2 bit1 bit0 PBE TB ODS 2 ODS 1 ODS 0 (Preamble bit (top/bottom (output driver (output driver (output driver Enable) selected) strength) strength) strength) 0=Top area 0=Disable protect 1=Bottom (Note 1) (Note 1) (Note 1) 1=Enable area protect (Default=0) volatile bit OTP volatile bit volatile bit volatile bit Note 1: see "Output Driver Strength Table" Output Driver Strength Table ODS2 0 0 0 0 1 1 1 1 P/N: PM2357 ODS1 0 0 1 1 0 0 1 1 ODS0 0 1 0 1 0 1 0 1 Resistance (Ohm) 146 Ohms 76 Ohms 52 Ohms 41 Ohms 34 Ohms 30 Ohms 26 Ohms 24 Ohms (Default) Macronix Proprietary 25 Note Impedance at VCC/2 (Typical) Rev. 1.1, June 04, 2020 MX25LM51245G 9-3. Configuration Register 2 Address 00000000h 00000200h Bit Symbol Bit 7-2 x 00000400h Bit 1 DOPI DTR OPI Enable Bit 0 SOPI (3) STR OPI Enable Bit 7-2 x Bit 1 DOS x Bit 2-0 DC Bit 7-2 x Bit 1-0 ECS Bit 7 x Bit 4 Bit 3-1 Bit 0 Bit 7 00000800h Bit 6-4 Bit 3-0 P/N: PM2357 Reserved (7) DQS on STR mode DQSPRC DTR DQS pre-cycle Bit 7-3 Bit 6-5 00000500h Reserved (7) (3) Bit 0 00000300h Description Reserved (7) Dummy cycle Reserved (7) ECS# pin goes low define Reserved (7) Define Reserved 00= SPI 01= STR OPI enable 10= DTR OPI enable 11= inhibit Reserved 0= Disable 1= Enable 0= 0 cycle 1= 1 cycle Reserved Refer to "Dummy Cycle and Frequency Table (MHz)" Reserved 00= 2 bit error or double programmed 01= 1 or 2 bit error or double programmed 10= 2 bit error only 11= 1 or 2 bit error 00= 16Byte CRC chunk size 01= 32Byte CRC CYC configuration 10= 64Byte 11= 128Byte 0= CRC# output Disable CRCBEN CRC# output enable 1= CRC# output Enable x Reserved (7) Reserved Preamble pattern refer to"9-3-2. Preamble PPTSEL selection Pattern Select Bit Table" 0= ECC failure address invalid ECC fail address valid (no fail address recorded) ECCFAVLD indicator 1= ECC failure address valid (there's fail address recorded) 000= None xx1= 1 bit corrected ECCFS ECC fail status x1x= 2 bits deteced 1xx= Double programmed page detected (1) ECC failure chunk ECCCNT counter Macronix Proprietary 26 0 Readable/ Writable x 0 R/W 0 R/W 0 x 0 R/W 0 R/W 0 x 000 R/W 0 x 00 R/W Volatile Bit 0 x x 00 R/W Volatile Bit 0 R/W 0 x 0 R/W 0 R (5) Volatile Bit 000 R (5) Volatile Bit 0000 R (5) Volatile Bit Default Type x Volatile Bit Volatile Bit x Volatile Bit Volatile Bit x Volatile Bit x Volatile Bit x Volatile Bit Rev. 1.1, June 04, 2020 MX25LM51245G Address 00000C00h(2) Bit Symbol Bit 7-4 ECCFA Bit 3-0 x 00000D00h(2) Bit 7-0 ECCFA 00000E00h(2) Bit 7-0 ECCFA 00000F00h (2) 40000000h 80000000h Default ECC failure chunk ECC 1st failure chunk address address (A7:A4) Readable/ Writable x R Reserved (7) Reserved x x ECC failure chunk address ECC failure chunk address ECC 1st failure chunk address (A15:A8) ECC 1st failure chunk address (A23:A16) x R x R Reserved (7) Reserved x x ECC failure chunk ECC 1st failure chunk address address (A25:A24) x R Reserved (7) Reserved 1 x x Enable Parity checking Reserved (7) Enable DOPI after Power on or reset Enable SOPI after Power on or reset Reserved (7) 0= Parity check Enable 1= Parity check Disable Reserved 00= inhibit 01= default DTR OPI mode 10= default STR OPI mode 11= default SPI mode Reserved 0= CMD# or Parity check pass 1= CMD# or Parity check fail Reserved 1 R/W OTP 1 x x 1 R/W OTP 1 R/W OTP 0 x x 0 R (6) Volatile Bit 0 x x Description Bit 7-2 x Bit 1-0 ECCFA Bit 7-4 x Bit 3 CRCEN# Bit 2 x (3,4) Bit 1 DEFDOPI# Bit 0 DEFSOPI# (3,4) Bit 7-5 x Bit 4 CRCERR Bit 3-0 x CMD# or Parity checked fail Reserved (7) Define Type Volatile Bit Volatile Bit Volatile Bit Volatile Bit Volatile Bit Volatile Bit Notes: 1. ECC failure chunk counter (00000800h bit[3:0]) stops counting once reach maximum value 15. The counting number increases if user reads the failure chunk multipe times. 2. ECC fail address only records first fail chunk fail address. For both 1bit and 2bit fail. ECCFA is valid only if ECCFAVLD value is 1. 3. The default status of DOPI and SOPI reflect the DEFDOPI# and DEFSOPI# setting. For example, if DEFDOPI#/DEFSOPI# are 01, DOPI and SOPI value will change to 10 after next Power on or reset and default status of the device will be DTR OPI. 4. The default DEFDOPI# status depends on the device model selection. 5. Write "00" data into 00000800h can reset the ECC status registers. 6. Write "00" data into 80000000h can reset the CMD# or Parity check status register. 7. All reserved bits must keep value factory default. All addresses not shown in the table must keep value unchanged. 8. Once either DOPI or SOPI bit ( 00000000h[0,1] ) set, user need to clear the bit to "00h" before change the setting. For example: set the 00000000h[0,1] from "00h""01h" or "00h""10h" is allowed. However, it is not allowed directly from "01h" to "10h". P/N: PM2357 Macronix Proprietary 27 Rev. 1.1, June 04, 2020 MX25LM51245G 9-3-1. Dummy Cycle and Frequency Table (MHz) DC [2:0] 000(Default) 001 010 011 100 101 110 111 Numbers of Dummy Cycle 20 18 16 14 12 10 8 6 Octa I/O STR (MHz) 133 133 133 133 104 104 84 66 9-3-2. Preamble Pattern Select Bit Table All SIOs (Except SIO3) Bit 0= 0 0011 0100 1001 1010 Bit 0= 1 0101 0101 0101 0101 P/N: PM2357 Macronix Proprietary 28 Octa I/O DTR (MHz) 133 133 133 133 104 104 84 66 SIO3 0011 0101 0001 0100 0101 0101 0101 0101 Rev. 1.1, June 04, 2020 MX25LM51245G 9-4. Security Register The definition of the Security Register bits is as below: Erase Fail bit. The Erase Fail bit is a status flag, which shows the status of last Erase operation. It will be set to "1", if the erase operation fails or the erase region is protected. It will be set to "0", if the last operation is successful. Please note that it will not interrupt or stop any operation in the flash memory. Program Fail bit. The Program Fail bit is a status flag, which shows the status of last Program operation. It will be set to "1", if the program operation fails or the program region is protected. It will be set to "0", if the last operation is successful. Please note that it will not interrupt or stop any operation in the flash memory. Erase Suspend bit. Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use ESB to identify the state of flash memory. After the flash memory is suspended by Erase Suspend command, ESB is set to "1". ESB is cleared to "0" after erase operation resumes. Program Suspend bit. Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may use PSB to identify the state of flash memory. After the flash memory is suspended by Program Suspend command, PSB is set to "1". PSB is cleared to "0" after program operation resumes. Secured OTP Indicator bit. The Secured OTP indicator bit shows the secured OTP area is locked by factory or not. When it is "0", it indicates non-factory lock; "1" indicates factory-lock. Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set to "1" for customer lock-down purpose. However, once the bit is set to "1" (lock-down), the LDSO bit and the 4K-bit Secured OTP area cannot be updated any more. While it is in 8K-bit secured OTP mode, main array access is not allowed. Table 14. Security Register Definition bit7 bit6 bit5 bit4 WPSEL E_FAIL P_FAIL Reserved 0=normal WP mode 1=individual mode (default=0) 0=normal Erase succeed 1=indicate Erase failed (default=0) 0=normal Program succeed 1=indicate Program failed (default=0) - 0=Erase is not suspended 1= Erase suspended (default=0) Non-volatile bit (OTP) Volatile bit Volatile bit - Volatile bit P/N: PM2357 bit3 bit2 ESB PSB (Erase (Program Suspend bit) Suspend bit) Macronix Proprietary 29 bit1 bit0 LDSO Secured OTP (indicate if indicator bit lock-down) 0 = not lock0=Program down 0 = nonis not 1 = lock-down factory suspended (cannot lock 1= Program program/ 1 = factory suspended erase lock (default=0) OTP) Non-volatile Non-volatile Volatile bit bit bit (OTP) (Read only) Rev. 1.1, June 04, 2020 MX25LM51245G 10. COMMAND DESCRIPTION 10-1. Write Enable (WREN) The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP/ PP3B/PP4B, SE/SE3B/SE4B, BE/BE3B/BE4B, CE, WRSR, WRCR2, SBL, WRFBR, ESFBR, WRSCUR, WRLR, WSPB and ESSPB which are intended to change the device content WEL bit should be set every time after the WREN instruction setting the WEL bit. The sequence of issuing WREN instruction is: CS# goes low→sending WREN instruction code→ CS# goes high. Figure 5. Write Enable (WREN) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 7 SCLK Command SI 06h High-Z SO Figure 6. Write Enable (WREN) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 06h F9h Figure 7. Write Enable (WREN) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2357 06h F9h Macronix Proprietary 30 Rev. 1.1, June 04, 2020 MX25LM51245G 10-2. Write Disable (WRDI) The Write Disable (WRDI) instruction is to reset Write Enable Latch (WEL) bit. The sequence of issuing WRDI instruction is: CS# goes low→sending WRDI instruction code→CS# goes high. The WEL bit is reset by following situations: - Power-up - Reset# pin driven low - WRDI command completion - WRSR/WRCR/WRCR2 command completion - PP/PP3B/PP4B command completion - SE/SE3B/SE4B/BE/BE3B/BE4B/CE command completion - SBL command completion - PGM/ERS Suspend command completion - Softreset command completion - WRSCUR command completion - WRFBR/ESFBR command completion - WRLR/WSPB/ESSPB command completion - GBLK/GBULK command completion Figure 8. Write Disable (WRDI) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 7 SCLK Command SI 04h High-Z SO Figure 9. Write Disable (WRDI) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 04h FBh Figure 10. Write Disable (WRDI) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2357 04h FBh Macronix Proprietary 31 Rev. 1.1, June 04, 2020 MX25LM51245G 10-3. Read Identification (RDID) The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The Macronix Manufacturer ID and Device ID are listed as Table 15 ID Definitions. The sequence of issuing RDID instruction is: CS# goes low→ sending RDID instruction code→24-bits ID data out on SO→ to end RDID operation can drive CS# to high at any time during data out. While Program/Erase operation is in progress, it will not decode the RDID instruction, therefore there's no effect on the cycle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby stage. Table 15. ID Definitions RDID 9Fh Manufacturer ID Memory type Memory density C2 85 3A Figure 11. Read Identification (RDID) Sequence (SPI mode) CS# 0 1 2 3 4 5 6 7 8 9 10 13 14 15 16 17 18 28 29 30 31 SCLK Command SI 9Fh Manufacturer Identification High-Z SO 7 6 5 2 1 MSB Device Identification 0 15 14 13 3 2 1 0 MSB Figure 12. Read Identification (RDID) Sequence (STR-OPI Mode) CS# SCLK Pre-drive SIO[7:0] 9Fh 60h 00 00 00 MID 00 Address Type Density Dummy Figure 13. Read Identification (RDID) Sequence (DTR-OPI Mode) CS# SCLK DQS Pre-drive SIO[7:0] 9Fh 60h 00 00 00 MID 00 Address P/N: PM2357 Type Density Dummy Macronix Proprietary 32 Rev. 1.1, June 04, 2020 MX25LM51245G 10-4. Read Status Register (RDSR) The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even in program/erase/write status register condition). It is recommended to check the Write in Progress (WIP) bit before sending a new instruction when a program, erase, or write status register operation is in progress. The sequence of issuing RDSR instruction is: CS# goes low→ sending RDSR instruction code→ Status Register data out on SO. Figure 14. Read Status Register (RDSR) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK command 05h SI Status Register Out High-Z SO 7 6 5 4 3 2 1 Status Register Out 0 7 6 5 4 3 2 1 0 7 MSB MSB Figure 15. Read Status Register (RDSR) Sequence (STR-OPI Mode) CS# SCLK Pre-drive SIO[7:0] 05h FAh 00 00 00 SR 00 Address SR Dummy Figure 16. Read Status Register (RDSR) Sequence (DTR-OPI Mode) CS# SCLK DQS Pre-drive SIO[7:0] 05h FAh 00 00 00 00 SR Address P/N: PM2357 SR Dummy Macronix Proprietary 33 Rev. 1.1, June 04, 2020 MX25LM51245G For user to check if Program/Erase operation is finished or not, RDSR instruction flow are shown as follows: Figure 17. Program/Erase flow with read array data start WREN command RDSR command* WEL=1? No Yes Program/erase command Write program data/address (Write erase address) RDSR command WIP=0? No Yes RDSR command Read WEL=0, BP[3:0] Read array data (same address of PGM/ERS) No Verify OK? Yes Program/erase successfully Program/erase another block? Program/erase fail Yes * Issue RDSR to check BP[3:0]. No Program/erase completed P/N: PM2357 Macronix Proprietary 34 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 18. Program/Erase flow without read array data (read P_FAIL/E_FAIL flag) start WREN command RDSR command* WEL=1? No Yes Program/erase command Write program data/address (Write erase address) RDSR command WIP=0? No Yes RDSR command Read WEL=0, BP[3:0] RDSCUR command Yes P_FAIL/E_FAIL =1 ? No Program/erase fail Program/erase successfully Program/erase another block? No Yes * Issue RDSR to check BP[3:0]. Program/erase completed P/N: PM2357 Macronix Proprietary 35 Rev. 1.1, June 04, 2020 MX25LM51245G 10-5. Read Configuration Register (RDCR) The RDCR instruction is for reading Configuration Register Bits. The Read Configuration Register can be read at any time (even in program/erase/write configuration register condition). The sequence of issuing RDCR instruction is: CS# goes low→ sending RDCR instruction code→ Configuration Register data out on SO. Figure 19. Read Configuration Register (RDCR) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK command 15h SI Configuration register Out High-Z SO 7 6 5 4 3 2 1 0 Configuration register Out 7 6 5 4 3 2 1 0 7 MSB MSB Figure 20. Read Configuration Register (RDCR) (STR-OPI Mode) CS# SCLK Pre-drive SIO[7:0] 15h 00 EAh 00 00 01 CR Address CR Dummy Figure 21. Read Configuration Register (RDCR) (DTR-OPI Mode) CS# SCLK DQS Pre-drive SIO[7:0] 15h EAh 00 00 00 01 CR Address P/N: PM2357 CR Dummy Macronix Proprietary 36 Rev. 1.1, June 04, 2020 MX25LM51245G 10-6. Write Status Register (WRSR) / Write Configuration Register (WRCR) The WRSR instruction is for changing the values of Status Register Bits and Configuration Register Bits. Before sending WRSR instruction, the Write Enable (WREN) instruction must be decoded and executed to set the Write Enable Latch (WEL) bit in advance. The WRSR instruction can change the value of Block Protect (BP3, BP2, BP1, BP0) bits to define the protected area of memory (as shown in "Table 3. Protected Area Sizes"). The WRSR has no effect on bit1(WEL) and bit0 (WIP) of the status register. In SPI, CS# must go high exactly at the 8 bits or 16 bits data boundary; In DOPI, CS# must go high while clock is low; otherwise, the instruction will be rejected and not executed. The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be check out during the Write Status Register cycle is in progress. The WIP sets 1 during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the Write Enable Latch (WEL) bit is reset. Figure 22. Write Status Register (WRSR) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 SCLK command SI SO 01h High-Z Status Register In 7 6 5 4 3 2 Configuration Register In 1 0 15 14 13 12 11 10 9 8 MSB Note : The CS# must go high exactly at 8 bits or 16 bits data boundary to completed the write register command. P/N: PM2357 Macronix Proprietary 37 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 23. Write Status Register (WRSR) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 01h FEh 00 00 00 00 SR Figure 24. Write Status Register (WRSR) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] 01h 00 FEh 00 00 SR 00 Note: CS# must go high while SCLK is low. Figure 25. Write Configuration Register (WRCR) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 01h FEh 00 00 00 01 CR Figure 26. Write Configuration Register (WRCR) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] 01h FEh 00 00 00 01 CR Note: CS# must go high while SCLK is low. P/N: PM2357 Macronix Proprietary 38 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 27. WRSR flow start WREN command RDSR command No WEL=1? Yes WRSR command Write status register data RDSR command No WIP=0? Yes RDSR command Read WEL=0, BP[3:0] No Verify OK? Yes WRSR successfully P/N: PM2357 WRSR fail Macronix Proprietary 39 Rev. 1.1, June 04, 2020 MX25LM51245G 10-7. Read Configuration Register 2 (RDCR2) The RDCR2 instruction is for reading Configuration Register 2. Except CRCERR bit, the Read Configuration Register 2 command would be rejected while Internal write operation is in progress (WIP=1). The sequence of issuing RDCR2 instruction is: CS# goes low→ sending RDCR2 instruction code→ Sending 4 byte address → Configuration Register 2 data out on SO. Figure 28. Read Configuration Register 2 (RDCR2) Sequence (SPI Mode) CS# SCLK command Address * 31 30 29 71h SI 3 2 1 0 MSB CR2 High-Z SO 7 6 5 4 3 CR2 2 1 0 7 MSB Note: * See "9-3. Configuration Register 2" for defining address . Figure 29. Read Configuration Register 2 (RDCR2) Sequence (STR-OPI Mode) CS# SCLK Pre-drive SIO[7:0] 71h 8Eh A[31:24] A[23:16] A[15:8] CR2 A[7:0] Address * CR2 Dummy Note: * See "9-3. Configuration Register 2" for defining address . Figure 30. Read Configuration Register 2 (RDCR2) (DTR-OPI Mode) CS# SCLK DQS Pre-drive SIO[7:0] 71h CR2 8Eh A[31:24] A[23:16] A[15:8] A[7:0] Address * CR2 Dummy Note: * See "9-3. Configuration Register 2" for defining address . P/N: PM2357 Macronix Proprietary 40 Rev. 1.1, June 04, 2020 MX25LM51245G 10-8. Write Configuration Register 2 (WRCR2) The WRCR2 instruction is for changing the values of Configuration Register 2. Before sending WRCR2 instruction, the Write Enable (WREN) instruction must be decoded and executed to set the Write Enable Latch (WEL) bit in advance. In SPI, CS# must go high exactly at the 8 bits data boundary; In DOPI, CS# must go high while clock is low; otherwise, the instruction will be rejected and not executed, and the Write Enable Latch (WEL) bit is reset. Figure 31. Write Configuration Register 2 (WRCR2) Sequence (SPI Mode) CS# SCLK Command 31 30 29 72h SI CR2 Address * 3 2 1 0 7 6 5 4 3 2 1 0 MSB MSB Note 1: * See "9-3. Configuration Register 2" for defining address . Figure 32. Write Configuration Register 2 (WRCR2) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 72h A[31:24] 8Dh A[23:16] A[15:8] A[7:0] CR2 Address * Note 1: * See "9-3. Configuration Register 2" for defining address . Figure 33. Write Configuration Register 2 (WRCR2) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] 72h 8Dh A[31:24] A[23:16] A[15:8] A[7:0] CR2 Address * Note 1 : * See "9-3. Configuration Register 2" for defining address. Note 2 : CS# must go high while SCLK is low P/N: PM2357 Macronix Proprietary 41 Rev. 1.1, June 04, 2020 MX25LM51245G 10-9. Read Security Register (RDSCUR) The RDSCUR instruction is for reading the value of Security Register bits. The Read Security Register can be read at any time (even in program/erase/write status register/write security register condition) and continuously. The sequence of issuing RDSCUR instruction is : CS# goes low→sending RDSCUR instruction→Security Register data out on SO→ CS# goes high. Figure 34. Read Security Register (RDSCUR) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK command 2Bh SI Security register Out High-Z SO 7 6 5 4 3 2 1 Security register Out 0 7 6 5 4 3 2 1 0 7 MSB MSB Figure 35. Read Security Register (RDSCUR) Sequence (STR-OPI Mode) CS# SCLK Pre-drive SIO[7:0] 2Bh D4h 00 00 00 Security Register 00 Address Security Register Dummy Figure 36. Read Security Register (RDSCUR) Sequence (DTR-OPI Mode) CS# SCLK DQS Pre-drive SIO[7:0] 2Bh D4h 00 00 00 Security Register 00 Address P/N: PM2357 Security Register Dummy Macronix Proprietary 42 Rev. 1.1, June 04, 2020 MX25LM51245G 10-10. Write Security Register (WRSCUR) The WRSCUR instruction sets the LDSO bit of the Security Register. The WREN (Write Enable) instruction is required before issuing WRSCUR instruction. The WRSCUR instruction may change the values of bit1 (LDSO bit) for customer to lock-down the 4K-bit customer usage area of Secured OTP. Once the LDSO bit is set to "1", the customer usage area of Secured OTP cannot be updated any more. The sequence of issuing WRSCUR instruction is :CS# goes low→ sending WRSCUR instruction → CS# goes high. The CS# must go high exactly at the boundary; otherwise, the instruction will be rejected and not executed. Figure 37. Write Security Register (WRSCUR) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 7 SCLK Command SI 2Fh High-Z SO Figure 38. Write Security Register (WRSCUR) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 2Fh D0h Figure 39. Write Security Register (WRSCUR) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2357 2Fh D0h Macronix Proprietary 43 Rev. 1.1, June 04, 2020 MX25LM51245G 10-11. Read Data Bytes (READ/READ3B/READ4B) The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on the falling edge of SCLK at a maximum frequency fR. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single READ/READ3B/ READ4B instruction. The address counter rolls over to 0 when the highest address has been reached. The sequence of issuing READ/READ3B/READ4B instruction is: CS# goes low→sending READ/READ3B/READ4B instruction code→ 3-byte or 4-byte address on SI→ data out on SO→to end READ/READ3B/READ4B operation can use CS# to high at any time during data out. Figure 40. Read Data Bytes (READ/READ3B/READ4B) Sequence (SPI Mode only) CS# SCLK Command SI 03h/13h (Note) 24/32-Bit Address (Note) 31 30 29 3 2 1 0 MSB SO Data Out 1 High-Z 7 6 5 4 3 2 Data Out 2 1 0 7 MSB Note: The number of address cycles are based on different address mode. In 3-Byte command operation, it is 24-bit. In 4-Byte command operation, it is 32-bit. P/N: PM2357 Macronix Proprietary 44 Rev. 1.1, June 04, 2020 MX25LM51245G 10-12. Read Data Bytes at Higher Speed (FAST_READ/FAST_READ3B/FAST_READ4B) The FAST_READ/FAST_READ3B/FAST_READ4B instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single FAST_READ/FAST_READ3B/FAST_READ4B instruction. The address counter rolls over to 0 when the highest address has been reached. The sequence of issuing FAST_READ/FAST_READ3B/FAST_READ4B instruction is: CS# goes low→ sending FAST_READ/FAST_READ3B/FAST_READ4B instruction code→ 3-byte or 4-byte address on SI→ 8 dummy cycles → data out on SO→ to end FAST_READ/FAST_READ3B/FAST_READ4B operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, FAST_READ/FAST_READ3B/FAST_READ4B instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. Figure 41. Read at Higher Speed (FAST_READ/FAST_READ3B/FAST_READ4B) Sequence (SPI Mode only) CS# SCLK Command SI 24/32-Bit Address (Note) 0Bh/0Ch (Note) 31 30 29 3 2 1 0 High-Z SO CS# SCLK Dummy Cycle SI 7 6 5 4 3 2 1 0 DATA OUT 2 DATA OUT 1 SO 7 6 5 4 3 2 1 0 7 MSB MSB 6 5 4 3 2 1 0 7 MSB Note: The number of address cycles are based on different address mode. In 3-Byte command operation, it is 24-bit. In 4-Byte command operation, it is 32-bit. P/N: PM2357 Macronix Proprietary 45 Rev. 1.1, June 04, 2020 MX25LM51245G 10-13. OCTA Read Mode (8READ) The 8READ instruction enable Octa throughput of Serial NOR Flash in read mode. An OPI Enable bit of Configuration Register 2 must be set to "1" before sending the STR Octa READ instruction. While Program/Erase/Write Status Register cycle is in progress, 8READ instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. Figure 42. OCTA Read Mode Sequence (STR-OPI Mode) ≈ ≈ CS# SCLK ≈ DQS (Note1) ECh 13h A[31:24] A[23:16] A[15:8] ≈ Pre-drive SIO[7:0] A[7:0] Address D0 D1 D2 D3 Dummy Note1: DQS is enabled only when DOS (DQS on STR mode) bit is set. Otherwise, it keeps Hi-Z. P/N: PM2357 Macronix Proprietary 46 Rev. 1.1, June 04, 2020 MX25LM51245G 10-14. OCTA DTR Read Mode (8DTRD) The 8DTRD instruction enable DTR Octa throughput of Serial NOR Flash in read mode. An DOPI Enable bit of Configuration Register 2 must be set to "1" before sending the DTR Octa READ instruction. While Program/Erase/Write Status Register cycle is in progress, 8DTRD instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. In DTR Octa READ mode, the starting address must be even byte (A0=0). Figure 43. OCTA Read Mode Sequence (DTR-OPI Mode) ≈ CS# ≈ SCLK EEh ≈ SIO[7:0] ≈ DQS 11h A[31:24]A[23:16] A[15:8] A[7:0] D1 D0 D3 D2 Dummy Address word unit word unit Figure 44. OCTA Read Mode Sequence (DTR-OPI Mode) with DQS pre-cycle enabled (CR2 DQSPRC=1) ≈ CS# ≈ SCLK EEh ≈ SIO[7:0] ≈ DQS 11h A[31:24]A[23:16] A[15:8] A[7:0] D1 D0 D3 D2 Dummy Address word unit word unit P/N: PM2357 Macronix Proprietary 47 Rev. 1.1, June 04, 2020 MX25LM51245G 10-15. Preamble Bit The Preamble Bit data pattern supports system/memory controller to determine the valid windows of data output more easily and improve data capture reliability while the flash memory is running in high frequency. The preamble bit is designed as a 16-bit data pattern, which can be enabled or disabled by setting the bit4 of Configuration register (Preamble bit Enable bit). Once CR is set, the preamble bit is inputted into dummy cycles. Two different patterns are selectable by setting CR PSB (Pattern Select Bit), and please refer to "9-3. Configuration Register 2" for details. Once Preamble Bit feature is enabled, the preamble bit pattern will be output after a pre-driven signal. When the device is under OPI mode, all SIO pins except SIO3 will output the same learning pattern. The signal on SIO3 will be different from other I/O pins in case PSB=0. In OPI, when dummy cycle number reaches 20, the complete 16 bits will start to output right after the pre-driven signal. When dummy cycle number is not sufficient of 16 cycles, the rest of the preamble bits will be cut off. In DOPI, when dummy cycles number reaches 12, the complete 16 bits will start to output right after the pre-driven signal. Figure 45. Preamble Bit data pattern Output Sequence (STR-OPI Mode) CS# SCLK Preamble Bits Pre-drive SIO[7:0] ECh 13h A[31:24] A[23:16] A[15:8] A[7:0] P0 Address P1 P2 P3 D[7:0] D[7:0] Dummy Note: 8 dummy cycle example. Figure 46. Preamble Bit data pattern Output Sequence (DTR-OPI Mode) CS# SCLK DQS Preamble Bits Pre-drive SIO[7:0] EEh 11h A A A [31:24] [23:16] [15:8] A [7:0] P0 Address P1 P2 P3 D[7:0] D[7:0] D[7:0] D[7:0] Dummy Note: 6 dummy cycle example. P/N: PM2357 Macronix Proprietary 48 Rev. 1.1, June 04, 2020 MX25LM51245G 10-16. Burst Read To set the Burst length, following command operation is required to issue command: “C0h” in the first Byte, following clock defining wrap around register value. Their definitions are as the following table: Data Wrap Around Wrap Depth 00h Reserved Reserved 01h Yes 16-byte 02h Yes 32-byte 03h Yes 64-byte 1xh No X The wrap around unit is defined with the 16/32/64 Byte, with random initial address. It is defined as “wrap-around mode disable” for the default state of the device. To exit wrap around, it is required to issue another “C0h” command in which data=‘1xh”. Otherwise, wrap around status will be retained until power down or reset command. To change wrap around depth, it is requried to issue another “C0h” command in which data=“0xh”. The device is default without Burst read. Figure 47. Set Burst Length (SPI Mode) CS# 0 1 2 3 4 5 6 7 8 9 D7 D6 10 11 12 13 14 15 SCLK SI C0h D5 D4 D3 D2 D1 D0 Figure 48. Set Burst Length (STR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2357 C0h 3Fh 00 00 Macronix Proprietary 49 00 00 SBL Rev. 1.1, June 04, 2020 MX25LM51245G 10-17. Fast Boot The Fast Boot Feature provides the ability to automatically execute read operation after power on cycle or reset without any read instruction. A Fast Boot Register is provided on this device. It can enable the Fast Boot function and also define the number of delay cycles and start address (where boot code being transferred). Instruction WRFBR (write fast boot register) and ESFBR (erase fast boot register) can be used for the status configuration or alternation of the Fast Boot Register bit. RDFBR (read fast boot register) can be used to verify the program state of the Fast Boot Register. The default number of delay cycles is 21 cycles in OPI/DOPI; while the number of delay cycles is 13 in SPI and there is a 16bytes boundary address for the start of boot code access. When CS# starts to go low, data begins to output from default address after the delay cycles. After CS# returns to go high, the device will go back to standard SPI/OPI/DOPI mode and user can start to input command. In the fast boot data out process from CS# goes low to CS# goes high, a minimum of one byte must be output. Once Fast Boot feature has been enabled, the device will automatically start a read operation after power on cycle, reset command, or hardware reset operation. Fast Boot Register (FBR) Bits Description FBSA (FastBoot Start Address) 31 to 4 3 Reserved 2 to 1 FBSD (FastBoot Start Delay Cycle) 0 FBE (FastBoot Enable) Bit Status Default State 16 bytes boundary address for the start of boot FFFFFFF code access. 1 00: 11 delay cycles 01: 15 delay cycles 10: 17 delay cycles 11: 21 delay cycles 0=FastBoot is enabled. 1=FastBoot is not enabled. Type NonVolatile NonVolatile 11 NonVolatile 1 NonVolatile Figure 49. Fast Boot Sequence (SPI Mode) CS# 0 - - - - - - n n+1 n+2 n+3 n+4 n+5 n+6 n+7 n+8 n+9 n+10 n+11n+12n+13n+14n+15 SCLK Delay Cycles SI Don’t care or High Impedance Data Out 1 SO High Impedance 7 6 5 4 3 2 Data Out 2 1 MSB 0 7 MSB 6 5 4 3 2 1 0 7 MSB Note: The delay cycle is always 13 in SPI mode. P/N: PM2357 Macronix Proprietary 50 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 50. Fast Boot Sequence (STR-OPI Mode) ≈ CS# 1 ≈ 0 SCLK n-1 n n+1 n+2 n+3 Pre-drive ≈ SIO[7:0] D0 D1 D2 D3 Delay Cycles Note: If FBSD = 11, delay cycles is 21 and n is 20. If FBSD = 10, delay cycles is 17 and n is 16. If FBSD = 01, delay cycles is 15 and n is 14. If FBSD = 00, delay cycles is 11 and n is 10. 0 SCLK DQS 1 n-2 n-1 n n+1 ≈ CS# ≈ ≈ Figure 51. Fast Boot Sequence (DTR-OPI Mode) ≈ Pre-drive SIO[7:0] D1 D0 D3 D2 Delay Cycles Note: If FBSD = 11, delay cycles is 21 and n is 21. If FBSD = 10, delay cycles is 17 and n is 17. If FBSD = 01, delay cycles is 15 and n is 15. If FBSD = 00, delay cycles is 11 and n is 11. P/N: PM2357 Macronix Proprietary 51 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 52. Read Fast Boot Register (RDFBR) Sequence CS# 0 1 2 3 4 5 6 7 8 9 10 37 38 39 40 41 SCLK Command SI 16h Data Out 1 High-Z SO 7 6 5 Data Out 2 26 25 24 7 6 MSB MSB Figure 53. Read Fast Boot Register (RDFBR) Sequence (STR-OPI Mode) CS# SCLK Pre-drive SIO[7:0] 16h E9h 00 00 00 00 FBR1 Address FBR2 Dummy Figure 54. Read Fast Boot Register (RDFBR) Sequence (DTR-OPI Mode) CS# SCLK DQS Pre-drive SIO[7:0] 16h E9h 00 00 00 00 FBR1 Address P/N: PM2357 FBR2 Dummy Macronix Proprietary 52 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 55. Write Fast Boot Register (WRFBR) Sequence CS# 0 1 2 3 4 5 6 7 8 37 38 39 9 10 SCLK Command SI Fast Boot Register 17h 7 6 26 25 24 5 MSB SO High-Z Figure 56. Write Fast Boot Register (WRFBR) Sequence (STR-OPI Mode) SCLK SIO[7:0] 17h E8h 00 00 00 00 FBR1 ≈ ≈ ≈ ≈ CS# FBR4 Figure 57. Write Fast Boot Register (WRFBR) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2357 17h E8h 00 00 00 00 FBR1 FBR2 FBR3 FBR4 Macronix Proprietary 53 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 58. Erase Fast Boot Register (ESFBR) Sequence CS# 0 1 2 3 4 5 6 7 SCLK Command SI 18h High-Z SO Figure 59. Erase Fast Boot Register (ESFBR) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 18h E7h Figure 60. Erase Fast Boot Register (ESFBR) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2357 18h E7h Macronix Proprietary 54 Rev. 1.1, June 04, 2020 MX25LM51245G 10-18. Sector Erase (SE/SE3B/SE4B) The Sector Erase (SE/SE3B/SE4B) instruction is for erasing the data of the chosen sector to be "1". The instruction is used for any 4K-byte sector. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before sending the Sector Erase (SE/SE3B/SE4B). Any address of the sector (Please refer to "5. MEMORY ORGANIZATION") is a valid address for Sector Erase (SE/SE3B/SE4B) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of the address byte been latched-in); otherwise, the instruction will be rejected and not executed. The sequence of issuing SE/SE3B/SE4B instruction is: CS# goes low→ sending SE/SE3B/SE4B instruction code→ 3-byte or 4-byte address → CS# goes high. The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Sector Erase cycle is in progress. The WIP sets 1 during the tSE timing, and clears when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the Block is protected by BP bits (Block Protect Mode), the Sector Erase (SE/SE3B/SE4B) instruction will not be executed on the block. Figure 61. Sector Erase (SE/SE3B/SE4B) Sequence (SPI Mode) CS# SCLK 24/32-Bit Address (Note) Command SI 20h/21h (Note) 31 30 2 1 0 MSB Note: The number of address cycles are based on different address mode. In 3-Byte command operation, it is 24-bit. In 4-Byte command operation, it is 32-bit. Figure 62. Sector Erase (SE) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 21h DEh A[31:24] A[23:16] A[15:8] A[7:0] Figure 63. Sector Erase (SE) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2357 21h A A A DEh [31:24] [23:16] [15:8] Macronix Proprietary 55 A [7:0] Rev. 1.1, June 04, 2020 MX25LM51245G 10-19. Block Erase (BE/BE3B/BE4B) The Block Erase (BE/BE3B/BE4B) instruction is for erasing the data of the chosen block to be "1". The instruction is used for 64K-byte block erase operation. A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Block Erase (BE/BE3B/BE4B). Any address of the block (Please refer to "5. MEMORY ORGANIZATION") is a valid address for Block Erase (BE/BE3B/BE4B) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed. The sequence of issuing BE/BE3B/BE4B instruction is: CS# goes low→ sending BE/BE3B/BE4B instruction code→ 3-byte or 4-byte address → CS# goes high. The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Block Erase cycle is in progress. The WIP sets during the tBE timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the Block is protected by BP bits (Block Protect Mode), the Block Erase (BE/BE3B/BE4B) instruction will not be executed on the block. Figure 64. Block Erase (BE/BE3B/BE4B) Sequence (SPI Mode) CS# SCLK 24/32-Bit Address (Note) Command SI D8h/DCh (Note) 31 30 2 1 0 MSB Note: The number of address cycles are based on different address mode. In 3-Byte command operation, it is 24-bit. In 4-Byte command operation, it is 32-bit. Figure 65. Block Erase (BE) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] DCh 23h A[31:24] A[23:16] A[15:8] A[7:0] Figure 66. Block Erase (BE) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2357 DCh 23h A A A [31:24] [23:16] [15:8] Macronix Proprietary 56 A [7:0] Rev. 1.1, June 04, 2020 MX25LM51245G 10-20. Chip Erase (CE) The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The CS# must go high exactly at the byte boundary, otherwise the instruction will be rejected and not executed. The sequence of issuing CE instruction is: CS# goes low→sending CE instruction code→CS# goes high. The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Chip Erase cycle is in progress. The WIP sets during the tCE timing, and clears when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. When the chip is under "Block protect (BP) Mode". The Chip Erase (CE) instruction will not be executed, if one (or more) sector is protected by BP3-BP0 bits. It will be only executed when BP3-BP0 all set to "0". Figure 67. Chip Erase (CE) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 7 SCLK Command SI 60h or C7h Figure 68. Chip Erase (CE) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 60h or C7h 9Fh or 38h Figure 69. Chip Erase (CE) Sequence (DTR-OPI Mode) CS# SCLK 60h or C7h SIO[7:0] P/N: PM2357 9Fh or 38h Macronix Proprietary 57 Rev. 1.1, June 04, 2020 MX25LM51245G 10-21. Page Program (PP/PP3B/PP4B) The Page Program (PP/PP3B/PP4B) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Page Program (PP/PP3B/ PP4B). The device programs only the last 256 data bytes sent to the device. If the entire 256 data bytes are going to be programmed, A7-A0 (The eight least significant address bits) should be set to 0. If A7-A0 are not all zero, transmitted data that exceed page length are programmed from the starting address (32-bit address that last 8 bit are all 0) of currently selected page. If the data bytes sent to the device exceeds 256, the last 256 data byte is programmed at the request page and previous data will be disregarded. If the data bytes sent to the device has not exceeded 256, the data will be programmed at the request address of the page. There will be no effort on the other data bytes of the same page. Please refer "12-1. ECC (Error Checking and Correcting)" for Partial program or double program restriction. In DTR OPI, the starting address given must be even address (A0=0) and data byte number must be even. The sequence of issuing PP/PP3B/PP4B instruction is: CS# goes low→ sending PP/PP3B/PP4B instruction code→ 3-byte or 4-byte address → at least 1-byte on data in SPI and STR OPI; at least two bytes in DOPI→ CS# goes high. The CS# must be kept to low during the whole Page Program cycle; The CS# must go high exactly at the byte boundary in SPI (the latest eighth bit of data being latched in), CS# must go high while SCLK is low in DOPI, otherwise the instruction will be rejected and will not be executed. The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Page Program cycle is in progress. The WIP sets during the tPP timing, and clears when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the page is protected by BP bits (Block Protect Mode), the Page Program (PP/PP3B/PP4B) instruction will not be executed. Figure 70. Page Program (PP/PP3B/PP4B) Sequence (SPI Mode) CS# SCLK Command 24/32-Bit Address (Note) 31 30 29 02h/12h (Note) SI 3 2 Data Byte 1 1 0 7 6 5 4 3 2 1 0 MSB MSB CS# SCLK Data Byte 2 SI 7 6 MSB 5 4 3 2 Data Byte 3 1 0 7 6 5 4 3 2 Data Byte 256 1 MSB 0 7 6 5 4 3 2 1 0 MSB Note: The number of address cycles are based on different address mode. In 3-Byte command operation, it is 24-bit. In 4-Byte command operation, it is 32-bit. P/N: PM2357 Macronix Proprietary 58 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 71. Page Program (PP) Sequence (STR-OPI Mode) tCHSH ≈ CS# tSLCH 12h EDh A[31:24] A[23:16] A[15:8] A[7:0] D0 D1 ≈≈ SIO[7:0] ≈ SCLK D254 D255 Figure 72. Page Program (PP) Sequence (DTR-OPI Mode) tCLSH tSLCH SCLK SIO[7:0] 12h A A A EDh [31:24] [23:16] [15:8] A [7:0] D1 D0 word unit ≈ ≈ ≈ ≈ CS# D255 D254 word unit Note: CS# must go high while SCLK is low. P/N: PM2357 Macronix Proprietary 59 Rev. 1.1, June 04, 2020 MX25LM51245G 10-22. Deep Power-down (DP) The Deep Power-down (DP) instruction is for setting the device to minimum power consumption (the standby current is reduced from ISB1 to ISB2). The Deep Power-down mode requires the Deep Power-down (DP) instruction to enter, during the Deep Power-down mode, the device is not active and all Write/Program/Erase instruction are ignored. When CS# goes high, it's only in deep power-down mode not standby mode. It's different from Standby mode. The sequence of issuing DP instruction is: CS# goes low→sending DP instruction code→CS# goes high. Once the DP instruction is set, all instruction will be ignored except the Release from Deep Power-down mode (RDP) and Read Electronic Signature (RES) instruction and softreset command. (those instructions allow the ID being reading out). When Power-down, or software reset command the deep power-down mode automatically stops, and when power-up, the device automatically is in standby mode. For DP instruction the CS# must go high exactly at the byte boundary (the latest eighth bit of instruction code been latched-in); otherwise, the instruction will not executed. As soon as Chip Select (CS#) goes high, a delay of tDP is required before entering the Deep Power-down mode. The device exits Deep Power-down mode and returns to Stand-by mode if CS# pulses low for tCRDP or if the device is power-cycled or hardware reset. After CS# goes high, there is a delay of tRES1 before the device transitions from Deep Power-down mode back to Stand-by mode. Figure 73. Deep Power-down (DP) Sequence (SPI Mode) tCRDP CS# tDP tRES1 0 1 2 3 4 5 6 7 SCLK Command B9h SI Stand-by Mode Deep Power-down Mode Stand-by Mode Figure 74. Deep Power-down (DP) Sequence (STR-OPI Mode) tCRDP CS# tDP tRES1 SCLK SIO[7:0] B9h 46h Stand-by Mode P/N: PM2357 Macronix Proprietary 60 Deep Power-down Mode Stand-by Mode Rev. 1.1, June 04, 2020 MX25LM51245G Figure 75. Deep Power-down (DP) Sequence (DTR-OPI Mode) tCRDP CS# tRES1 tDP SCLK SIO[7:0] B9h 46h Stand-by Mode Deep Power-down Mode Stand-by Mode 10-23. Enter Secured OTP (ENSO) The ENSO instruction is for entering the additional 8K-bit secured OTP mode. While device is in 8K-bit secured OTP mode, main array access is not available. The additional 8K-bit secured OTP is independent from main array and may be used to store unique serial number for system identifier. After entering the Secured OTP mode, follow standard read or program procedure to read out the data or update data. The Secured OTP data cannot be updated again once it is lock-down. The sequence of issuing ENSO instruction is: CS# goes low→ sending ENSO instruction to enter Secured OTP mode→ CS# goes high. Please note that after issuing ENSO command user can only access secure OTP region with standard read or program procedure. Furthermore, once security OTP is lock down, only read related commands are valid. 10-24. Exit Secured OTP (EXSO) The EXSO instruction is for exiting the additional 8K-bit secured OTP mode. The sequence of issuing EXSO instruction is: CS# goes low→ sending EXSO instruction to exit Secured OTP mode→ CS# goes high. P/N: PM2357 Macronix Proprietary 61 Rev. 1.1, June 04, 2020 MX25LM51245G 10-25. Write Protection Selection (WPSEL) There are two write protection methods provided on this device, (1) Block Protection (BP) mode or (2) Advanced Sector Protection mode. The protection modes are mutually exclusive. The WPSEL bit selects which protection mode is enabled. If WPSEL=0 (factory default), BP mode is enabled and Advanced Sector Protection mode is disabled. If WPSEL=1, Advanced Sector Protection mode is enabled and BP mode is disabled. The WPSEL command is used to set WPSEL=1. A WREN command must be executed to set the WEL bit before sending the WPSEL command. Please note that the WPSEL bit is an OTP bit. Once WPSEL is set to “1”, it cannot be programmed back to “0”. When WPSEL = 0: Block Protection (BP) mode, The memory array is write protected by the BP3~BP0 bits. When WPSEL =1: Advanced Sector Protection mode, Blocks are individually protected by their own SPB or DPB. On power-up, all blocks are write protected by the Dynamic Protection Bits (DPB) by default. The Advanced Sector Protection instructions WRLR, RDLR, WRPASS, RDPASS, PASSULK, WRSPB, ESSPB, WRDPB, RDDPB, GBLK, and GBULK are activated. The BP3~BP0 bits of the Status Register are disabled and have no effect. The sequence of issuing WPSEL instruction is: CS# goes low → send WPSEL instruction to enable the Advanced Sector Protect mode → CS# goes high. Write Protection Selection Start (Default in BP Mode) WPSEL=1 Set WPSEL Bit Advanced Sector Protection Set Lock Register WPSEL=0 Block Protection (BP) Bit 2 =1 Bit 2 =0 Password Protection P/N: PM2357 Solid Protection Macronix Proprietary 62 Dynamic Protection Rev. 1.1, June 04, 2020 MX25LM51245G 10-26. Advanced Sector Protection There are two ways to implement software Advanced Sector Protection on this device. Through these two protection methods, user can disable or enable the programming or erasing op­eration to any individual sector or all sectors. There is a non-volatile (SPB) and volatile (DPB) protection bit related to the single sector in main flash array. Each of the sectors is protected from programming or erasing operation when the bit is set. The figure below helps describing an overview of these methods. The device is default to the Solid mode when shipped from factory. The detail algorithm of advanced sector protection is shown as follows: Figure 76. Advanced Sector Protection Overview Start Bit 2=1 Bit 2=0 Set Lock Register ? Solid Protection Mode Password Protection Mode Set 64 bit Password Set SPB Lock Down Bit ? (SPBLKDN) Bit 6 = 0 SPB Locked All SPB can not be changeable Bit 6 = 1 SPB Unlocked SPB is changeable Solid Protection Bits (SPB) Dynamic Protect Bit Register (DPB) DPB=1 sector protect Sector Array SPB=1 Write Protect SPB=0 Write Unprotect DPB=0 sector unprotect P/N: PM2357 DPB 0 SA 0 SPB 0 DPB 1 SA 1 SPB 1 DPB 2 SA 2 SPB 2 : : : : : : DPB N-1 SA N-1 SPB N-1 DPB N SA N SPB N Macronix Proprietary 63 Rev. 1.1, June 04, 2020 MX25LM51245G 10-26-1. Lock Register The Lock Register is a 8-bit register. Lock Register Bit[6] is SPB Lock Down Bit (SPBLKDN) which is assigned to control all SPB bit status. Lock Register Bit[2] is Password Protection Mode Lock Bit. Both bits are defaulted as 1 when shipping from factory. When SPBLKDN is 1, SPB can be changed. When it is locked as 0, all SPB can not be changed. Users can choose their favorite sector protecting method via setting Lock Register Bit[2] using WRLR command. The device default status was in Solid Protection Mode (Bit[2]=1), Once Bit[2] has been programmed (cleared to "0"), the device will enable the Password Protection Mode and lock in that mode permanently. In Solid Protection Mode (Bit[2]=1, factory default), the SPBLKDN can be programmed using the WRLR command and permanently lock down the SPB bits. After programming SPBLKDN to 0, all SPB can not be changed anymore, and neither Lock Register Bit[2] nor Bit[6] can be altered anymore. In Password Protection Mode (Bit[2]=0), the SPBLKDN becomes a volatile bit with default 0 (SPB bit protected). A correct password is required with PASSULK command to set SPBLKDN to 1. To clear SPBLKDN back to 0, a Hardware/Software Reset or power-up cycle is required. If user selects Password Protection mode, the password setting is required. User can set password by issuing WRPASS command before Lock Register Bit[2] set to 0. Lock Register Bits Description 7 Reserved SPB Lock Down bit 6 (SPBLKDN) 5 to 3 Reserved 2 Bit Status Default Reserved 0: SPB bit Protected 1: SPB bit Unprotected Reserved Reserved Solid Protection Mode: 1 Bit 2=1: OTP Password Protection Mode: 0 Bit 2=0: Volatile Reserved Password Protection 0=Password Protection Mode Enable Mode Lock Bit 1= Solid Protection Mode 1 to 0 P/N: PM2357 Reserved Type Reserved 1 OTP Reserved Macronix Proprietary 64 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 77. Read Lock Register (RDLR) Sequence CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK command 2Dh SI Register Out High-Z SO 7 6 5 4 3 2 1 0 7 MSB Figure 78. Read Lock Register (RDLR) Sequence (STR-OPI Mode) CS# SCLK Pre-drive SIO[7:0] 2Dh D2h 00 00 00 LR 00 Address LR Dummy Figure 79. Read Lock Register (RDLR) Sequence (DTR-OPI Mode) CS# SCLK DQS Pre-drive SIO[7:0] 2Dh D2h 00 00 00 00 LR Address P/N: PM2357 LR Dummy Macronix Proprietary 65 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 80. Write Lock Register (WRLR) Sequence CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK Command SI Lock Register In 2Ch 7 6 5 4 3 2 1 0 MSB High-Z SO Figure 81. Write Lock Register (WRLR) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 2Ch D3h 00 00 00 00 LR Figure 82. Write Lock Register (WRLR) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] 2Ch D3h 00 00 00 00 LR Note: CS# must go high while SCLK is low. P/N: PM2357 Macronix Proprietary 66 Rev. 1.1, June 04, 2020 MX25LM51245G 10-26-2. Solid Protection Bits The Solid Protection Bits (SPBs) are nonvolatile bits for enabling or disabling write-protection to sectors and blocks. The SPB bits have the same endurance as the Flash memory. An SPB is assigned to each 4KB sector in the bottom and top 64KB of memory and to each 64KB block in the remaining memory. The factory default state of the SPB bits is “0”, which has the sector/block write-protection disabled. When an SPB is set to “1”, the associated sector or block is write-protected. Program and erase operations on the sector or block will be inhibited. SPBs can be individually set to “1” by the WRSPB command. However, the SPBs cannot be individually cleared to “0”. Issuing the ESSPB command clears all SPBs to “0”. A WREN command must be executed to set the WEL bit before sending the WRSPB or ESSPB command. The RDSPB command reads the status of the SPB of a sector or block. The RDSPB command returns 00h if the SPB is “0”, indicating write-protection is disabled. The RDSPB command returns FFh if the SPB is “1”, indicating write-protection is enabled. Note: If SPBLKDN=0, commands to set or clear the SPB bits will be ignored. SPB Register Bit Description 7 to 0 SPB (Solid Protection Bit) P/N: PM2357 Bit Status 00h = Unprotect Sector / Block FFh = Protect Sector / Block Macronix Proprietary 67 Default Type 00h Non-volatile Rev. 1.1, June 04, 2020 MX25LM51245G Figure 83. Read SPB Status (RDSPB) Sequence CS# 0 1 2 3 4 5 6 7 8 37 38 39 40 41 42 43 44 45 46 47 9 SCLK Command SI 32-Bit Address E2h A31 A30 A2 A1 A0 MSB Data Out High-Z SO 7 6 5 4 3 2 1 0 MSB Figure 84. Read SPB Status (RDSPB) Sequence (STR-OPI Mode) ≈ CS# ≈ SCLK E2h 1Dh A[31:24] A[23:16] A[15:8] ≈ Pre-drive SIO[7:0] A[7:0] Address SPB SPB Dummy Figure 85. Read SPB Status (RDSPB) Sequence (DTR-OPI Mode) ≈ CS# ≈ ≈ SCLK DQS Pre-drive E2h A A A 1Dh [31:24] [23:16] [15:8] A [7:0] ≈ SIO[7:0] Address P/N: PM2357 SPB SPB Dummy Macronix Proprietary 68 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 86. SPB Erase (ESSPB) Sequence CS# 0 1 2 3 4 5 6 7 SCLK Command SI E4h High-Z SO Figure 87. SPB Erase (ESSPB) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] E4h 1Bh Figure 88. SPB Erase (ESSPB) Sequence (DTR-OPI Mode) CS# SCLK E4h SIO[7:0] P/N: PM2357 1Bh Macronix Proprietary 69 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 89. SPB Program (WRSPB) Sequence CS# 0 1 2 3 4 5 6 7 8 37 38 39 9 SCLK Command SI 32-Bit Address E3h A31 A30 A2 A1 A0 MSB Figure 90. SPB Program (WRSPB) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] E3h 1Ch A[31:24] A[23:16] A[15:8] A[7:0] Figure 91. SPB Program (WRSPB) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2357 E3h 1Ch A A A [31:24] [23:16] [15:8] Macronix Proprietary 70 A [7:0] Rev. 1.1, June 04, 2020 MX25LM51245G 10-26-3. Dynamic Write Protection Bits The Dynamic Protection features a volatile type protection to each individual sector. It can protect sectors from unintentional change, and is easy to disable when there are necessary changes. All DPBs are default as protected (FFh) after reset or upon power up cycle. Via setting up Dynamic Protection bit (DPB) by write DPB command (WRDPB), user can cancel the Dynamic Protection of associated sector. The Dynamic Protection only works on those unprotected sectors whose SPBs are cleared. After the DPB state is cleared to “0”, the sector can be modified if the SPB state is unprotected state. DPB Register Bit Description 7 to 0 DPB (Dynamic protected Bit) Bit Status Default 00h= DPB for the sector address unprotected FFh FFh= DPB for the sector address protected Type Volatile Figure 92. Read DPB Register (RDDPB) Sequence CS# 0 1 2 3 4 5 6 7 8 37 38 39 40 41 42 43 44 45 46 47 9 SCLK Command SI 32-Bit Address E0h A31 A30 A2 A1 A0 MSB Data Out High-Z SO 7 6 5 4 3 2 1 0 MSB Figure 93. Read DPB Register (RDDPB) Sequence (STR-OPI Mode) ≈ CS# ≈ SCLK E0h 1Fh A[31:24] A[23:16] A[15:8] A[7:0] Address P/N: PM2357 ≈ Pre-drive SIO[7:0] DPB DPB Dummy Macronix Proprietary 71 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 96. Read DPB Register (RDDPB) Sequence (DTR-OPI Mode) ≈ CS# ≈ ≈ SCLK DQS Pre-drive E0h A A A A [7:0] 1Fh [31:24] [23:16] [15:8] ≈ SIO[7:0] Address DPB DPB Dummy Figure 94. Write DPB Register (WRDPB) Sequence CS# 0 1 2 3 4 5 6 7 8 37 38 39 40 41 42 43 44 45 46 47 9 SCLK Command SI Data Byte 1 32-Bit Address E1h A31 A30 7 A2 A1 A0 MSB 6 5 4 3 2 1 0 MSB Figure 95. Write DPB Register (WRDPB) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] E1h 1Eh A[31:24] A[23:16] A[15:8] A[7:0] DPB Address Figure 97. Write DPB Register (WRDPB) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] E1h 1Eh A[31:24] A[23:16] A[15:8] A[7:0] DPB Address P/N: PM2357 Macronix Proprietary 72 Rev. 1.1, June 04, 2020 MX25LM51245G 10-26-4. Password Protection Mode Password Protection mode potentially provides a higher level of security than Solid Protection mode. In Password Protection mode, the SPBLKDN bit defaults to “0” after a power-on cycle or reset. When SPBLKDN=0, the SPBs are locked and cannot be modified. A 64-bit password must be provided to unlock the SPBs. The PASSULK command with the correct password will set the SPBLKDN bit to “1” and unlock the SPB bits. After the correct password is given, a wait of 2us is necessary for the SPB bits to unlock. The Status Register WIP bit will clear to “0” upon completion of the PASSULK command. Once unlocked, the SPB bits can be modified. A WREN command must be executed to set the WEL bit before sending the PASSULK command. Several steps are required to place the device in Password Protection mode. Prior to entering the Password Protection mode, it is necessary to set the 64-bit password and verify it. The WRPASS command writes the password and the RDPASS command reads back the password. Password verification is permitted until the Password Protection Mode Lock Bit has been written to “0”. Password Protection mode is activated by programming the Password Protection Mode Lock Bit to “0”. This operation is not reversible. Once the bit is programmed, it cannot be erased. The device remains permanently in Password Protection mode and the 64-bit password can neither be retrieved nor reprogrammed. The password is all “1’s” when shipped from the factory. The WRPASS command can only program password bits to “0”. The WRPASS command cannot program “0’s” back to “1’s”. All 64-bit password combinations are valid password options. A WREN command must be executed to set the WEL bit before sending the WRPASS command. ● The unlock operation will fail if the password provided by the PASSULK command does not match the stored password. This will set the P_FAIL bit to “1” and insert a delay before clearing the WIP bit to “0”. User has to wait 150us before issuing another PASSULK command. This restriction makes it impractical to attempt all combinations of a 64-bit password (such an effort would take millions of years). Monitor the WIP bit to determine whether the device has completed the PASSULK command. ● When a valid password is provided, the PASSULK command does not insert the delay before returning the WIP bit to zero. The SPBLKDN bit will set to “1” and the P_FAIL bit will be “0”. ● It is not possible to set the SPBLKDN bit to “1” if the password had not been set prior to the Password Protection mode being selected. Password Register (PASS) Bits Field Function Type Name 63 to 0 PWD P/N: PM2357 Description Default State Non-volatile OTP storage of 64 bit password. The Hidden password is no longer readable after the Password OTP FFFFFFFFFFFFFFFFh Password Protection mode is selected by programming Lock Register bit 2 to zero. Macronix Proprietary 73 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 98. Read Password Register (RDPASS) Sequence CS# 0 1 2 3 4 5 6 7 8 39 40 47 48 109 110 SCLK Command SI 32-bit Address 27h 0 0 0 8 Dummy 0 Data Out High-Z SO 7 6 58 57 56 High-Z MSB SCLK ≈ ≈ ≈ CS# ≈ Figure 99. Read Password Register (RDPASS) Sequence (STR-OPI Mode) SIO[7:0] D8h 00h 00h 00h ≈ Pre-drive 27h 00h Address D0 D7 20 Dummy ≈ CS# ≈ DQS ≈ ≈ SCLK ≈ ≈ Figure 100. Read Password Register (RDPASS) Sequence (DTR-OPI Mode) 27h D8h 00h 00h 00h ≈ Pre-drive SIO[7:0] 00h Address P/N: PM2357 D1 D0 D7 D6 20 Dummy Macronix Proprietary 74 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 101. Write Password Register (WRPASS) Sequence CS# 0 1 2 3 4 5 6 7 39 40 8 102 103 SCLK 32-bit Address Command SI 28h 0 0 0 Password 7 0 6 58 57 56 MSB High-Z SO Figure 102. Write Password Register (WRPASS) Sequence (STR-OPI Mode) ≈ CS# SIO[7:0] ≈ SCLK 28h D7h 00h 00h 00h 00h D0 Address D6 D7 Password Figure 103. Write Password Register (WRPASS) Sequence (DTR-OPI Mode) ≈ ≈ CS# SCLK SIO[7:0] 28h D7h 00h 00h 00h 00h D1 Address P/N: PM2357 D0 D7 D6 Password Macronix Proprietary 75 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 104. Password Unlock (PASSULK) Sequence CS# 0 1 2 3 4 5 6 7 39 40 8 102 103 SCLK 32-bit Address Command SI 29h 0 0 0 Password 0 7 6 58 57 56 MSB High-Z SO Figure 105. Password Unlock (PASSULK) (STR-OPI Mode) ≈ CS# SIO[7:0] ≈ SCLK 29h D6h 00h 00h 00h 00h D0 Address D6 D7 Password Figure 106. Password Unlock (PASSULK) (DTR-OPI Mode) ≈ ≈ CS# SCLK SIO[7:0] 29h D6h 00h 00h 00h 00h D1 Address P/N: PM2357 D0 D7 D6 Password Macronix Proprietary 76 Rev. 1.1, June 04, 2020 MX25LM51245G 10-26-5. Gang Block Lock/Unlock (GBLK/GBULK) These instructions are only effective after WPSEL was executed. The GBLK/GBULK instruction is a chip-based protected or unprotected operation. It can enable or disable all DPB. The WREN (Write Enable) instruction is required before issuing GBLK/GBULK instruction. The sequence of issuing GBLK/GBULK instruction is: CS# goes low → send GBLK/GBULK (7Eh/98h) instruction →CS# goes high. The CS# must go high exactly at the byte boundary, otherwise, the instruction will be rejected and not be executed. 10-26-6. Sector Protection States Summary Table Protection Status DPB bit SPB bit 0 0 0 1 1 0 1 1 P/N: PM2357 Sector State Unprotect Protect Protect Protect Macronix Proprietary 77 Rev. 1.1, June 04, 2020 MX25LM51245G 10-27. Program Suspend and Erase Suspend The Suspend instruction interrupts a Program or Erase operation to allow the device conduct other operations. After the device has entered the suspended state, the memory array can be read except for the page being programmed or the sector being erased. Security Register bit 2 (PSB) and bit 3 (ESB) can be read to check the suspend status. The PSB (Program Suspend Bit) sets to “1” when a program operation is suspended. The ESB (Erase Suspend Bit) sets to “1” when an erase operation is suspended. The PSB or ESB clears to “0” when the program or erase operation is resumed. When the Serial NOR Flash receives the Suspend instruction, Program Suspend Latency(tPSL) or Erase Suspend latency(tESL) is required to complete suspend operation. (Refer to "Table 24. AC CHARACTERISTICS") After the device has entered the suspended state, the WEL bit is clears to “0” and the PSB or ESB in security register is set to “1”, then the device is ready to acceptanother command. However, some commands can be executed without tPSL or tESL latency during the program/erase suspend, and can be issued at any time during the Suspend. Please refer to "Table 16. Acceptable Commands During Suspend". Figure 107. Suspend to Read Latency tPSL / tESL CS# P/N: PM2357 Suspend Command Macronix Proprietary 78 Read Command Rev. 1.1, June 04, 2020 MX25LM51245G Table 16. Acceptable Commands During Suspend Command Name Suspend Type Command Code Program Suspend Erase Suspend • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • Commands which require tPSL/tESL delay READ 03h/13h FAST_READ 0Bh/0Ch 8READ ECh 8DTRD EEh RDSFDP 5Ah RDID 9Fh SBL C0h ENSO B1h EXSO C1h WREN 06h RESUME 30h RDLR 2Dh RDSPB E2h RDFBR 16h RDDPB E0h RDCR2 with A[31:30]=00/01 71h WRCR2 with A[31:30]=00 WRCR2 with A[31:30]=01 72h Commands not required tPSL/tESL delay WRDI 04h RDSR 05h RDCR 15h RDCR2 with A[31:30]=10 71h WRCR2 with A[31:30]=10 72h RDSCUR 2Bh RES ABh RSTEN 66h RST 99h NOP 00h P/N: PM2357 Macronix Proprietary 79 Rev. 1.1, June 04, 2020 MX25LM51245G 10-28. Program Resume and Erase Resume The Resume instruction resumes a suspended Program or Erase operation. After the device receives the Resume instruction, the WEL and WIP bits are set to “1” and the PSB or ESB is cleared to “0”.The program or erase operation will continue until it is completed or until another Suspend instruction is received. To issue another Suspend instruction, the minimum resume-to-suspend latency (tPRS or tERS) is required. However, in order to finish the program or erase progress, a period equal to or longer than the typical timing is required. To issue other command except suspend instruction, a latency of the self-timed Page Program Cycle time (tPP) or Sector Erase (tSE) is required. The WEL and WIP bits are cleared to “0” after the Program or Erase operation is completed. Figure 108. Resume to Read Latency CS# Resume Command tSE / tBE / tPP Read Command Figure 109. Resume to Suspend Latency CS# P/N: PM2357 Resume Command tPRS / tERS Macronix Proprietary 80 Suspend Command Rev. 1.1, June 04, 2020 MX25LM51245G 10-29. No Operation (NOP) The “No Operation” command is only able to terminate the Reset Enable (RSTEN) command and will not affect any other command. 10-30. Software Reset (Reset-Enable (RSTEN) and Reset (RST)) The Software Reset operation combines two instructions: Reset-Enable (RSTEN) command following a Reset (RST) command. It returns the device to a standby mode. All the volatile bits and settings will be cleared then, which makes the device return to the default status as power on. To execute Reset command (RST), the Reset-Enable (RSTEN) command must be executed first to perform the Reset operation. If there is any other command to interrupt after the Reset-Enable command, the Reset-Enable will be invalid. If the Reset command is executed during program or erase operation, the operation will be disabled, the data under processing could be damaged or lost. The reset time is different depending on the last operation. For details, please refer to "Table 20. Reset Timing(Other Operation)" for tREADY2. P/N: PM2357 Macronix Proprietary 81 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 110. Software Reset Recovery Stand-by Mode 66 CS# 99 tREADY2 Mode Note: Refer to "Table 20. Reset Timing-(Other Operation)" for tREADY2. Figure 111. Reset Sequence (SPI mode) TSHSL CS# SCLK Command Command 99h 66h SIO0 Figure 112. Reset Sequence (STR-OPI mode) TSHSL CS# SCLK SIO[7:0] 66h 99h 99h 66h 99h 66h Figure 113. Reset Sequence (DTR-OPI mode) TSHSL CS# SCLK SIO[7:0] P/N: PM2357 66h 99h Macronix Proprietary 82 Rev. 1.1, June 04, 2020 MX25LM51245G 11. Serial Flash Discoverable Parameter (SFDP) 11-1. Read SFDP Mode (RDSFDP) The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables can be interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on CFI. The sequence of issuing RDSFDP instruction in SPI is CS# goes low→send RDSFDP instruction (5Ah)→send 3 address bytes on SI pin→ send 8 dummy cycles → read SFDP code on SO→to end RDSFDP operation can use CS# to high at any time during data out. SFDP in SPI is a JEDEC standard, JESD216D. The sequcn of issuing RDSFDP instruction in OPI/DOPI mode: CS# low → send RDSFDP instruction (5Ah/A5h) → send 4 address bytes on SIO pin→ send 20 dummy cycles → read SFDP code on SIO[7:0] → to end RDSFDP operation can use CS# to high at any time during data out. Figure 114. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command SI SO 24 BIT ADDRESS 23 22 21 5Ah 3 2 1 0 High-Z CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Cycle SI 7 6 5 4 3 2 1 0 DATA OUT 2 DATA OUT 1 SO 7 6 5 4 3 2 P/N: PM2357 1 0 7 MSB MSB Macronix Proprietary 83 6 5 4 3 2 1 0 7 MSB Rev. 1.1, June 04, 2020 MX25LM51245G Figure 115. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence (STR-OPI Mode) 1 2 3 4 5 ≈ ≈ CS# 6 SCLK 26 27 28 Pre-drive A5h A[31:24] A[23:16] A[15:8] A[7:0] ≈ SIO[7:0] 5Ah Address D0 D1 D2 20 Dummy Figure 116. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence (DTR-OPI Mode) ≈ CS# 1 2 3 4 23 5Ah ≈ ≈ DQS SIO[7:0] 25 ≈ SCLK 24 A5h A[31:24]A[23:16] A[15:8] A[7:0] D1 D0 D3 D2 20 Dummy Address word unit word unit Note: Address must be low byte (A0=0) in DTR OPI. Table 17. Signature and Parameter Identification Data Values For SFDP register values detail, please contact local Macronix sales channel for Application Note. P/N: PM2357 Macronix Proprietary 84 Rev. 1.1, June 04, 2020 MX25LM51245G 12. Data Integrity check The data storage and transmission errors will cause unexpected Flash device variation that makes a harmful impact on overall system functions. To prevent these errors, MX25LM51245G product provides advanced Data Integrity Check function. For the data storage and data transmission in the flash device, Data Integrity Check can check errors and correct them, allowing self-checking and preventing errors in advance. The Data Integrity Check function includes two methods: - ECC (Error Checking and Correcting): to prevent the data storage errors - Parity Check (CRC1): to prevent the data transmission errors The status register data and software signals can also be used to associate the Data Integrity Check function to fully record the results of checking, and can also immediately feedback. 12-1. ECC (Error Checking and Correcting) Macronix Serial Octa SPI Flash have built-in ECC. The ECC algorithm uses a Hamming code that can correct a single bit error per 16-Byte chunk. During a page program operation, the internal state machine will create the ECC automatically. During a read operation, the internal ECC state machine corrects bit errors automatically. It is recommended that data be programmed in multiples of 16 bytes in the predefined 16-byte chunk address (see "Table 18. 16-Byte Chunks within a Page") using the Page Program command instead of programming a byte or a word at a time using the Program command. However, partial program of 16-byte chunk is allowed under the restriction that user won't program or alter the content of partially programmed chunk without erasing the sector first. ECC checking of a 16-Byte chunk will be disabled if double program (rewriting without erase), or rewrite a chunk (alternating of single bit, byte, or word) happens in that chunk. Once ECC checking of a chuck is disabled, it will not be re-activated until the sector, containing the ECC disabled chunk, is erased. The ECC registers show detailed information for error correction activity on the device. The ECC status registers are placed on CR2. Which include 3-bit ECC status to identify the error type, 4-bit failure chunk counter and first failure chunk address. The ECC register can be reset through either of the following situations: - Write "00" data into ECC status register - Issuing Software Reset Command - Hardware Reset - Power-up cycle Table 18. 16-Byte Chunks within a Page Chunk# 0 1 2 3 4 5 16 Bytes B0 ~B15 B16 ~B31 B32 ~B47 B48 ~B63 B64 ~B79 B80 ~B95 P/N: PM2357 6 7 8 9 10 11 12 13 14 15 B96 B112 B128 B144 B160 B176 B192 B208 B224 B240 ~B111 ~B127 ~B143 ~B159 ~B175 ~B191 ~B207 ~B223 ~B239 ~B255 Macronix Proprietary 85 Rev. 1.1, June 04, 2020 MX25LM51245G 12-2. ECS# (Error corrected Signal) Pin The ECS# pin is a real time hardware signal to feedback the ECC correction status. The ECS# pin is designed as an open drain structure. In normal situation, the ECS# is kept on Hi-Z state. Once error correction begins, the ECS# pin will pull low during the whole ECC chunk unit after a duration of tECSV delay timing. The ECS# pin is default as going low when 2-bit error detection is enabled and double program detected. However, user can select the different option for error correction by setting the ECS register in CR2 [00000400h]. Command Address ≈ ≈≈ ≈ ECC chunk (16Bytes) ECC chunk (16Bytes) ≈ ECS# ≈≈ ≈ SIO[7:0] ≈ ≈ ≈ SCLK ≈ ≈ CS# ≈ Figure 117. ECS# Timing tECSV P/N: PM2357 Macronix Proprietary 86 Chunk with ECC error detected Rev. 1.1, June 04, 2020 MX25LM51245G 12-3. Parity Check (CRC1) The parity check function can only be operated at DTR OPI mode, it does not support OPI mode. The CRCEN# bit in CR2 [address 40000000h] bit3 can enable the parity check function. CRCEN# is an OTP bit; once it is programmed to "0", it cannot be disabled anyhow. For write operation after the Parity check function is enabled, the CRC code needs to be set after the address and data cycles. The starting address for the Flash device has to be issued at CRC chunk boundary, and the data CRC bit also should be output by each CRC chunk unit. Otherwise, read CRC code might be error; and program command would abort. There is a bit [CR2 00000500h] that output data is CRC on both clock edges, or is CRC/CRC# on clock rising/ falling edge respectively. The CRC chunk unit is default to set as 16bytes. It can also configure the chunk unit to 32bytes, 64bytes or 128bytes by CRC register setting in CR2 [address 00000500h]. For register write, an extra DATA# cycle must be set right after data cycle as in "Figure 121. CRC Timing (Write Register - example for 1byte data)". For register read, an extra DATA# would be output after the data cycle as in "Figure 122. CRC Timing (Read register - example for 1byte data)". The address CRC byte is calculated by exclusive-OR of all the address bytes; the data CRC bytes are calculated by exclusive-OR of all the data bytes in the CRC chunk. ≈ ≈≈ ≈ ≈ ≈≈ ≈ CRC CRC Multiple of CRC chunks Address ≈ Command ≈ ECS# CRC ≈ SIO[7:0] ≈ SCLK ≈ CS# ≈ Figure 118. CRC Timing (Without CRC# output) tECSV ECC Chunk with ECC checking fail Address ≈ ≈≈ ≈ CRC CRC# tECSV P/N: PM2357 CRC CRC# Multiple of CRC chunks ≈ Command ≈ ECS# CRC ≈ SIO[7:0] ≈ ≈ SCLK ≈≈ ≈ ≈ CS# ≈ Figure 119. CRC Timing (With CRC# output) Macronix Proprietary 87 ECC Chunk with ECC checking fail Rev. 1.1, June 04, 2020 MX25LM51245G Figure 120. CRC Timing (Page Program) Data (16/32/64/128B) CRC Command CRC ≈ ≈ ≈ SIO[7:0] ≈≈ ≈ SCLK ≈ ≈ CS# Data (16/32/64/128B) CRC Address Figure 121. CRC Timing (Write Register - example for 1byte data) CS# SCLK SIO[7:0] CRC Command Data Data# Address Figure 122. CRC Timing (Read register - example for 1byte data) CS# SCLK SIO[7:0] Command P/N: PM2357 Data CRC Data# Address Macronix Proprietary 88 Rev. 1.1, June 04, 2020 MX25LM51245G 13. RESET Driving the RESET# pin low for a period of tRLRH or longer will reset the device. After reset cycle, the device is at the following states: - Standby mode - All the volatile bits such as WEL/WIP will return to the default status as power on. - All the volatile bits in CR2 will return to the default status as power on. - Fastboot read will be executed on first CS# pin goes low If the device is under programming or erasing, driving the RESET# pin low will also terminate the operation and data could be lost. During the resetting cycle, the SIO data becomes high impedance and the current will be reduced to minimum. Figure 123. RESET Timing CS# tRHSL SCLK tRH tRS RESET# tRLRH tREADY1 / tREADY2 Table 19. Reset Timing-(Standby) Symbol Parameter tRHSL Reset# high before CS# low tRS Reset# setup time tRH Reset# hold time tRLRH Reset# low pulse width tREADY1 Reset Recovery time Min. 10 15 15 10 35 Typ. Max. Unit us ns ns us us Min. 10 15 15 10 40 40 310 12 25 100 40 Typ. Max. Unit us ns ns us us us us ms ms ms ms Table 20. Reset Timing-(Other Operation) Symbol tRHSL tRS tRH tRLRH Parameter Reset# high before CS# low Reset# setup time Reset# hold time Reset# low pulse width Reset Recovery time (During instruction decoding) Reset Recovery time (for read operation) Reset Recovery time (for program operation) tREADY2 Reset Recovery time(for SE4KB operation) Reset Recovery time (for BE64K operation) Reset Recovery time (for Chip Erase operation) Reset Recovery time (for WRSR operation) P/N: PM2357 Macronix Proprietary 89 Rev. 1.1, June 04, 2020 MX25LM51245G 14. POWER-ON STATE The device is at below states when power-up: - Standby mode (please note it is not deep power-down mode) - Write Enable Latch (WEL) bit is reset The device must not be selected during power-up and power-down stage unless the VCC achieves below correct level: - VCC minimum at power-up stage and then after a delay of tVSL - GND at power-down Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level. An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change during power up state. When VCC is lower than VWI (POR threshold voltage value), the internal logic is reset and the flash device has no response to any command. For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is not guaranteed. The write, erase, and program command should be sent after the below time delay: - tVSL after VCC reached VCC minimum level The device can accept read command after VCC reached VCC minimum and a time delay of tVSL. Please refer to the ""Power-up Timing"". Note: - To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is recommended. (generally around 0.1uF) - At power-down stage, the VCC drops below VWI level, all operations are disable and device has no response to any command. The data corruption might occur during the stage while a write, program, erase cycle is in progress. - To stabilize the VCCQ level, the VCCQ/VSSQ rail decoupled by a suitable capacitor close to package pins is recommended. One VCCQ pin connect to one capacitor. - It is recommended VCC and VCCQ power are separated system supply with same supply voltage. P/N: PM2357 Macronix Proprietary 90 Rev. 1.1, June 04, 2020 MX25LM51245G 15. ELECTRICAL SPECIFICATIONS Table 21. ABSOLUTE MAXIMUM RATINGS RATING VALUE Ambient Operating Temperature Industrial grade -40°C to 85°C Storage Temperature -65°C to 150°C Applied Input Voltage -0.5V to VCC+0.5V Applied Output Voltage -0.5V to VCC+0.5V VCC to Ground Potential -0.5V to 4.0V NOTICE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and functional operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability. 2. Specifications contained within the following tables are subject to change. 3. During voltage transitions, all pins may overshoot to VCC+1.0V or -1.0V for period up to 20ns. Figure 125. Maximum Positive Overshoot Waveform Figure 124. Maximum Negative Overshoot Waveform 20ns 0V VCC+1.0V -1.0V VCC 20ns Table 22. CAPACITANCE TA = 25°C, f = 1.0 MHz Symbol Parameter CIN COUT P/N: PM2357 Min. Typ. Max. Unit Input Capacitance 8 pF VIN = 0V Output Capacitance 8 pF VOUT = 0V Macronix Proprietary 91 Conditions Rev. 1.1, June 04, 2020 MX25LM51245G Figure 126. DATA INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL Input timing reference level 0.8VCC 0.7VCC 0.3VCC 0.2VCC Output timing reference level AC Measurement Level 0.5VCC Figure 127. SCLK TIMING DEFINITION tCLCH tCHCL VIH (Min.) 0.5VCC VIL (Max.) tCL tCH 1/fSCLK P/N: PM2357 Macronix Proprietary 92 Rev. 1.1, June 04, 2020 MX25LM51245G Table 23. DC CHARACTERISTICS Temperature = -40°C to 85°C, VCC = 2.7V ~ 3.6V Symbol Parameter Notes Min. Typ. Max. Units Test Conditions ILI Input Load Current 1 ±2 uA VCC = VCC Max, VIN = VCC or GND ILO Output Leakage Current 1 ±2 uA VCC = VCC Max, VOUT = VCC or GND ISB1 VCC Standby Current 1 35 180 uA VIN = VCC or GND, CS# = VCC ISB2 Deep Power-down Current 25 80 uA VIN = VCC or GND, CS# = VCC 20 40 mA 100MHz 8IO STR (SIO floating) 30 45 mA 100MHz 8IO DTR (SIO floating) 25 50 mA 133MHz 8IO STR (SIO floating) 40 60 mA 133MHz 8IO DTR (SIO floating) 30 40 mA 20 40 mA ICC1 ICC2 ICC3 ICC4 ICC4 ICC5 VCC Read VCC Program Current 1,3 1 VCC Write Status Register (WRSR) Current VCC Sector Erase Current (SE) VCC Block Erase Current (BE) 1 20 40 mA 1 30 40 mA VCC Chip Erase Current (CE) 1 20 40 mA Program in Progress, CS# = VCC Program status register in progress, CS#=VCC Erase in Progress, CS#=VCC Erase in Progress, CS#=VCC Erase in Progress, CS#=VCC VIL Input Low Voltage -0.4 0.3VCC V VIH Input High Voltage 0.7VCC VCC+0.4 V VOL Output Low Voltage 0.2 V IOL=100uA VOH Output High Voltage V IOH=-100uA VCC-0.2 Notes : 1. Typical values at VCC = 3.3V, T = 25°C. These currents are valid for all product versions (package and speeds). 2. Typical value is calculated by simulation. 3. VCC current only; not include VCCQ current. P/N: PM2357 Macronix Proprietary 93 Rev. 1.1, June 04, 2020 MX25LM51245G Table 24. AC CHARACTERISTICS Temperature = -40°C to 85°C, VCC = 2.7V ~ 3.6V Symbol fSCLK fRSCLK fTSCLK Alt. Parameter Clock frequency for SPI commands (except Read operation) fC Clock frequency for OPI commands fR Clock Frequency for READ instructions Clock Frequency for FAST READ tCLH Clock High Time tCL Clock Low Time fSCLK ≤ 100MHz Clock Rise Time / Clock Fall Time fSCLK ≤ 133MHz tCSS CS# Active Setup Time (relative to SCLK) CS# Not Active Hold Time (relative to SCLK) From Read to next Read tSHSL tCSH CS# Deselect Time From Write/Erase/Program to Read Status Register tDVCH tDSU Data In Setup Time (10) STR ≤ 133MHz DTR ≤ 100MHz tDVCH / Data setup time (9) (10) tDVCL DTR ≤ 133MHz STR ≤ 133MHz tCHDX tDH Data In Hold Time (10) DTR ≤ 100MHz tCHDX / Data hold time (9) (10) tCLDX DTR ≤ 133MHz CS# Active Hold Time (relative to tCHSH STR SCLK) tCLSH CS# active hold time DTR STR CS# Not Active Setup Time tSHCH (relative to SCLK) DTR tSHQZ tDIS Output Disable Time tQSV Clock transient to DQS valid time Loading: 30pF Loading: 20pF tCLQV / tV Clock transient to Output Valid tCHQV Loading: 15pF Loading: 10pF tCLQX tHO Output Hold Time Loading: 10pF Loading: 15pF (10) tDQSQ SIO valid skew related to DQS Loading: 20pF Loading: 30pF (10) SIO hold time related to DQS tQHS SIO hold skew factor tECSV(10) ECS go low time P/N: PM2357 Typ. Max. 133 133 66 133 "9-3-1. Dummy Cycle and Frequency Table (MHz)" Clock Frequency for 8READ, 8DTRD tCH(1) tCL(1) tCLCH / tCHCL tSLCH tCHSL tQH(10) Min. Loading: 10pF Loading: 15pF Loading: 20pF Loading: 30pF Loading: 30pF Macronix Proprietary 94 Unit MHz MHz MHz MHz MHz 0.45*T 0.45*T 0.6 0.8 4.5 3 10 ns ns V/ns V/ns ns ns ns 40 ns 2 1 0.8 2 1 0.8 ns ns ns ns 3 ns 3 3 3 ns ns ns ns ns 1 min(tCL,tCH)tQHS 8 8 8 7 6 5.5 0.8 0.8 0.8 1 ns ns ns ns 1 1 1 1.2 10 ns ns Rev. 1.1, June 04, 2020 MX25LM51245G AC Characteristics - continued Symbol tDP tRES1 tCRDP tW tW2V tW2N(10) tPP tSE tBE tCE tESL(6) tPSL(6) tPRS(7) tERS(8) Alt. Parameter Min. CS# High to Deep Power-down Mode CS# High to Standby Mode CS# Toggling Time before Release from Deep Power-Down 20 Mode Write Status/Configuration Register Cycle Time Write Configuration Register 2 volatile bit Write Configuration Register 2 non-volatile bit Page Program Cycle Time Sector Erase Cycle Time Block Erase (64KB) Cycle Time Chip Erase Cycle Time Erase Suspend Latency Program Suspend Latency Latency between Program Resume and next Suspend 0.3 Latency between Erase Resume and next Suspend 0.3 Typ. Max. Unit 10 us 30 us ns 40 0.15 25 220 150 100 400 40 60 0.75 400 2000 300 25 25 ms ns us ms ms ms s us us us us Notes: 1. tCH + tCL must be greater than or equal to 1/ Frequency. 2. Typical values given for TA=25°C. Not 100% tested. 3. Test condition is shown as Figure 126. 4. While programming consecutive bytes, Page Program instruction provides optimized timings by selecting to program the whole 256 bytes or only a few bytes between 1~256 bytes. 5. By default dummy cycle value. Please refer to the "Table 1. Operating Frequency Comparison". 6. Latency time is required to complete Erase/Program Suspend operation until WIP bit is "0". 7. For tPRS, minimum timing must be observed before issuing the next program suspend command. However, a period equal to or longer than the typical timing is required in order for the program operation to make progress. 8. For tERS, minimum timing must be observed before issuing the next erase suspend command. However, a period equal to or longer than the typical timing is required in order for the erase operation to make progress. 9. tDVCH+tCHDX>1.5ns for each SIO; tDVCL+tCLDX>1.5ns for each SIO. 10. Sampled, not 100% tested. P/N: PM2357 Macronix Proprietary 95 Rev. 1.1, June 04, 2020 MX25LM51245G 16. OPERATING CONDITIONS At Device Power-Up and Power-Down AC timing illustrated in Figure 128 and Figure 129 are for the supply voltages and the control signals at device power-up and power-down. If the timing in the figures is ignored, the device will not operate correctly. During power-up and power-down, CS# needs to follow the voltage applied on VCC to keep the device not to be selected. The CS# can be driven low when VCC reach Vcc(min.) and wait a period of tVSL. Figure 128. AC Timing at Device Power-Up VCC VCC(min) GND tVR tSHSL CS# tSLCH tCHSL tCHSH tSHCH SCLK tDVCH tCHCL tCHDX LSB IN MSB IN SI High Impedance SO Symbol tVR tCLCH Parameter VCC Rise Time Notes 1 Min. Max. 500000 Unit us/V Notes : 1. Sampled, not 100% tested. 2. For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the figure, please refer to Table 24. AC CHARACTERISTICS. P/N: PM2357 Macronix Proprietary 96 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 129. Power-Down Sequence During power-down, CS# needs to follow the voltage drop on VCC to avoid mis-operation. VCC CS# SCLK Figure 130. Power-up Timing VCC VCC(max) Chip Selection is Not Allowed VCC(min) tVSL Device is fully accessible VWI time P/N: PM2357 Macronix Proprietary 97 Rev. 1.1, June 04, 2020 MX25LM51245G Figure 131. Power Up/Down and Voltage Drop When powering down the device, VCC must drop below VPWD for at least tPWD to ensure the device will initialize correctly during power up. Please refer to "Figure 131. Power Up/Down and Voltage Drop" and "Table 25. PowerUp/Down Voltage and Timing" below for more details. VCC VCC (max.) Chip Select is not allowed VCC (min.) V_keep tVSL VWI Full Device Access Allowed VPWD (max.) tPWD Time Table 25. Power-Up/Down Voltage and Timing Symbol tPWD Parameter VCC voltage needed to below VPWD for ensuring initialization will occur Voltage that a re-initialization is necessary if VDD drop below to VKEEP The minimum duration for ensuring initialization will occur tVSL VCC(min.) to device operation VCC VCC Power Supply 2.7 3.6 V VWI Write Inhibit Voltage 2.0 2.3 V VPWD V_keep Min. Max. Unit 0.9 V 2.4 V 300 us 3 ms Note: These parameters are characterized only. 16-1. INITIAL DELIVERY STATE The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status Register contains 00h (all Status Register bits are 0). DEFDOPI# in CR2 depends on shipping device model. P/N: PM2357 Macronix Proprietary 98 Rev. 1.1, June 04, 2020 MX25LM51245G 17. ERASE AND PROGRAMMING PERFORMANCE Parameter Min. Typ. (1) Max. (2) Unit 40 ms Write Status Register Cycle Time Sector Erase Cycle Time (4KB) 25 400 ms Block Erase Cycle Time (64KB) 220 2000 ms Chip Erase Cycle Time 150 300 s Page Program Time 0.15 0.75 ms Erase/Program Cycle 100,000 cycles Note: 1. Typical program and erase time assumes the following conditions: 25°C, 3V, and checkboard pattern. 2. Under worst conditions of minimum operation voltage and the temperature of the worst case. 3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming command. 18. DATA RETENTION Parameter Condition Min. Data retention 55˚C 20 Max. Unit years 19. LATCH-UP CHARACTERISTICS Min. Input Voltage with respect to GND on all power pins Max. 1.5 VCCmax Input Current on all non-power pins -100mA +100mA Test conditions: VCC = VCCmax, one pin at a time (compliant to JEDEC JESD78 standard). P/N: PM2357 Macronix Proprietary 99 Rev. 1.1, June 04, 2020 MX25LM51245G 20. ORDERING INFORMATION Please contact Macronix regional sales for the latest product selection and available form factors. PART NO. CLOCK (MHz) TEMPERATURE PACKAGE Remark MX25LM51245GXDI00 133 -40°C to 85°C 24-Ball BGA (5x5 ball array) Default x1I/O, Supported password protection feature MX25LM51245GMI00 133 -40°C to 85°C 16-SOP (300mil) Default x1I/O, Supported password protection feature P/N: PM2357 Macronix Proprietary 100 Rev. 1.1, June 04, 2020 MX25LM51245G 21. PART NAME DESCRIPTION MX 25 LM 51245G XD I 00 MODEL CODE: 00: Default STR, x1 I/O enable 10: Default DTR, x8 I/O enable TEMPERATURE RANGE: I: Industrial (-40°C to 85°C) PACKAGE: XD: 24-Ball BGA (5x5 ball array) M: 16-SOP (300mil) DENSITY & MODE: 51245G: 512Mb TYPE: LM: 3V Octa I/O DEVICE: 25: Serial NOR Flash P/N: PM2357 Macronix Proprietary 101 Rev. 1.1, June 04, 2020 MX25LM51245G 22. PACKAGE INFORMATION P/N: PM2357 Macronix Proprietary 102 Rev. 1.1, June 04, 2020 MX25LM51245G P/N: PM2357 Macronix Proprietary 103 Rev. 1.1, June 04, 2020 MX25LM51245G 23. REVISION HISTORY Revision No. Description Page Date 0.01 1. Updated parameters for DC/AC Characteristics P82-84 MAR/10/2016 2. Updated Erase and Programming Performance P88 3. Updated CIN & COUT value P80 4. Modified Figure 3 & Figure 4 P15 5. Added 16-SOP Package information P6,8,89,90,92 6. Content correction P25,26,46,70,73 1.0 1. Updated parameters for DC/AC Characteristics P93-95,99 NOV/24/2016 2. Added "Data Integrity check" All 3. Added Password Protection P19,23,62-64,73-76 4. Updated the Ordering Information and removed 0A part No. P100,101 5. Updated tVR values P96,98 6. Removed "Advanced Information" to align with the product All status 7. Updated the note for the internal pull up status of RESET# pin P8 8. Content correction P5,17,19,27,29, P58,91,92,98 1.1 1. Updated SCLK timing and definition P14,92 JUN/04/2020 2. Updated "PIN CONFIGURATIONS" (B1 & B5 information) P8 3. Updated "Configuration Register 2" table description & notes P26,27 4. Added SFDP content description notes P83,84 5. Removed "Figure 127. OUTPUT LOADING" P92,95 6. Added DQS signal for "OCTA Read Mode Sequence" P46 7. Updated AC table for tW2V, tW2N & tQH notes P94,95 8. Revised LATCH-UP testing descriptions. P99 9. Content correction ALL P/N: PM2357 Macronix Proprietary 104 Rev. 1.1, June 04, 2020 MX25LM51245G Except for customized products which have been expressly identified in the applicable agreement, Macronix's products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only, and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property damages. In the event Macronix products are used in contradicted to their target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/or distributors shall be released from any and all liability arisen therefrom. Copyright© Macronix International Co., Ltd. 2015~2020. All rights reserved, including the trademarks and tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, Nbit, Macronix NBit, HybridNVM, HybridFlash, HybridXFlash, XtraROM, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE, RichBook, Rich TV, OctaBus, FitCAM, ArmorFlash. The names and brands of third party referred thereto (if any) are for identification purposes only. For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice. 105