MX25U1635E
MX25U1635E
1.8V, 16M-BIT [x 1/x 2/x 4]
CMOS MXSMIO® (SERIAL MULTI I/O)
FLASH MEMORY
Key Features
• 1.65 to 2.0 volt for read, erase, and program operations
• Multi I/O Support - Single I/O, Dual I/O and Quad I/O
• Fast read for SPI mode and QPI mode
• Additional 4k-bit secured OTP for unique identifier
• Auto Erase and Auto Program Algorithm
P/N: PM1472
1
Rev. 2.1, September 29, 2016
MX25U1635E
Contents
1. FEATURES............................................................................................................................................................... 6
2. GENERAL DESCRIPTION...................................................................................................................................... 7
Table 1. Additional Feature Comparison.............................................................................................................. 8
3. PIN CONFIGURATIONS .......................................................................................................................................... 9
4. PIN DESCRIPTION................................................................................................................................................... 9
5. BLOCK DIAGRAM.................................................................................................................................................. 10
6. DATA PROTECTION............................................................................................................................................... 11
Table 2. Protected Area Sizes............................................................................................................................ 12
Table 3. 4K-bit Secured OTP Definition.............................................................................................................. 12
7. Memory Organization............................................................................................................................................ 13
Table 4. Memory Organization........................................................................................................................... 13
8. DEVICE OPERATION............................................................................................................................................. 14
Figure 1. Serial Modes Supported..................................................................................................................... 14
8-1. Quad Peripheral Interface (QPI) Read Mode................................................................................................ 15
Figure 2. Enable QPI Sequence (Command 35H)............................................................................................. 15
Figure 3. Reset QPI Mode (Command F5H)...................................................................................................... 16
Figure 4. Fast QPI Read Mode (FASTRDQ) (Command EBH) ........................................................................ 16
9. COMMAND DESCRIPTION.................................................................................................................................... 17
Table 5. Command Set....................................................................................................................................... 17
9-1. Write Enable (WREN)................................................................................................................................... 19
9-2. Write Disable (WRDI).................................................................................................................................... 19
9-3. Read Identification (RDID)............................................................................................................................ 19
9-4. Read Status Register (RDSR)...................................................................................................................... 19
Figure 5. Program/ Erase flow with read array data........................................................................................... 20
Figure 6. Program/ Erase flow without read array data (read P_FAIL/E_FAIL flag)........................................... 21
Figure 7. WRSR flow.......................................................................................................................................... 22
Table 6. Status Register..................................................................................................................................... 23
9-5. Write Status Register (WRSR)...................................................................................................................... 24
Table 7. Protection Modes.................................................................................................................................. 24
9-6. Read Data Bytes (READ).............................................................................................................................. 25
9-7. Read Data Bytes at Higher Speed (FAST_READ)........................................................................................ 25
9-8. 2 x I/O Read Mode (2READ)......................................................................................................................... 26
9-9. 4 x I/O Read Mode (4READ)......................................................................................................................... 26
9-10. Burst Read.................................................................................................................................................. 27
Table 8. Wrap Around Definition Table............................................................................................................... 27
Figure 8. Burst Read (SPI Mode)....................................................................................................................... 27
Figure 9. Burst Read (QPI Mode)....................................................................................................................... 27
P/N: PM1472
2
Rev. 2.1, September 29, 2016
MX25U1635E
9-11. Performance Enhance Mode....................................................................................................................... 28
9-12. Sector Erase (SE)....................................................................................................................................... 28
9-13. Block Erase (BE32K).................................................................................................................................. 28
9-14. Block Erase (BE)......................................................................................................................................... 29
9-15. Chip Erase (CE).......................................................................................................................................... 29
9-16. Page Program (PP)..................................................................................................................................... 30
9-17. 4 x I/O Page Program (4PP)....................................................................................................................... 30
9-18. Deep Power-down (DP).............................................................................................................................. 31
9-19. Release from Deep Power-down (RDP), Read Electronic Signature (RES)............................................... 31
9-20. Read Electronic Manufacturer ID & Device ID (REMS).............................................................................. 32
9-21. QPI ID Read (QPIID)................................................................................................................................... 32
Table 9. ID Definitions ....................................................................................................................................... 32
9-22. Enter Secured OTP (ENSO)....................................................................................................................... 33
9-23. Exit Secured OTP (EXSO).......................................................................................................................... 33
9-24. Read Security Register (RDSCUR)............................................................................................................ 33
Table 10. Security Register Definition................................................................................................................ 34
9-25. Write Security Register (WRSCUR)............................................................................................................ 34
9-26. Write Protection Selection (WPSEL)........................................................................................................... 35
Figure 10. BP and SRWD if WPSEL=0.............................................................................................................. 35
Figure 11. The individual block lock mode is effective after setting WPSEL=1.................................................. 36
Figure 12. WPSEL Flow..................................................................................................................................... 37
9-27. Single Block Lock/Unlock Protection (SBLK/SBULK)................................................................................. 38
Figure 13. Block Lock Flow................................................................................................................................ 38
Figure 14. Block Unlock Flow............................................................................................................................. 39
9-28. Read Block Lock Status (RDBLOCK)......................................................................................................... 40
9-29. Gang Block Lock/Unlock (GBLK/GBULK)................................................................................................... 40
9-30. Program/Erase Suspend/Resume.............................................................................................................. 40
9-31. Erase Suspend............................................................................................................................................ 41
9-32. Program Suspend....................................................................................................................................... 41
9-33. Write-Resume............................................................................................................................................. 42
9-34. No Operation (NOP).................................................................................................................................... 42
9-35. Software Reset (Reset-Enable (RSTEN) and Reset (RST))....................................................................... 42
9-36. Reset Quad I/O (RSTQIO).......................................................................................................................... 42
9-37. Read SFDP Mode (RDSFDP)..................................................................................................................... 43
Figure 15. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence.................................................. 43
Table 11. Signature and Parameter Identification Data Values ......................................................................... 44
Table 12. Parameter Table (0): JEDEC Flash Parameter Tables....................................................................... 45
Table 13. Parameter Table (1): Macronix Flash Parameter Tables.................................................................... 47
10. POWER-ON STATE.............................................................................................................................................. 49
P/N: PM1472
3
Rev. 2.1, September 29, 2016
MX25U1635E
11. ELECTRICAL SPECIFICATIONS......................................................................................................................... 50
11-1. Absolute Maximum Ratings......................................................................................................................... 50
Figure 16. Maximum Negative Overshoot Waveform........................................................................................ 50
11-2. Capacitance................................................................................................................................................ 50
Figure 17. Maximum Positive Overshoot Waveform.......................................................................................... 50
Figure 18. Input Test Waveforms and Measurement Level................................................................................ 51
Figure 19. Output Loading................................................................................................................................. 51
Table 14. DC Characteristics.............................................................................................................................. 52
Table 15. AC Characteristics.............................................................................................................................. 53
12. Timing Analysis................................................................................................................................................... 54
Figure 20. Serial Input Timing............................................................................................................................ 54
Figure 21. Output Timing.................................................................................................................................... 54
Figure 22. WP# Setup Timing and Hold Timing during WRSR when SRWD=1................................................. 55
Figure 23. Write Enable (WREN) Sequence (Command 06) (SPI Mode).......................................................... 55
Figure 24. Write Enable (WREN) Sequence (Command 06) (QPI Mode)......................................................... 55
Figure 25. Write Disable (WRDI) Sequence (Command 04) (SPI Mode).......................................................... 56
Figure 26. Write Disable (WRDI) Sequence (Command 04) (QPI Mode).......................................................... 56
Figure 27. Read Identification (RDID) Sequence (Command 9F) (SPI mode only)........................................... 56
Figure 28. Read Status Register (RDSR) Sequence (Command 05) (SPI Mode)............................................. 57
Figure 29. Read Status Register (RDSR) Sequence (Command 05) (QPI Mode)............................................ 57
Figure 30. Write Status Register (WRSR) Sequence (Command 01) (SPI Mode)........................................... 57
Figure 31. Write Status Register (WRSR) Sequence (Command 01) (QPI Mode)........................................... 58
Figure 32. Read Data Bytes (READ) Sequence (Command 03) (SPI Mode only) (33MHz)............................. 58
Figure 33. Read at Higher Speed (FAST_READ) Sequence (Command 0B) (SPI Mode) (104MHz).............. 59
Figure 34. Read at Higher Speed (FAST_READ) Sequence (Command 0B) (QPI Mode) (84MHz)................ 59
Figure 35. 2 x I/O Read Mode Sequence (Command BB) (SPI Mode only) (84MHz)....................................... 60
Figure 36. 4 x I/O Read Mode Sequence (Command EB) (SPI Mode) (104MHz)............................................. 60
Figure 37. 4 x I/O Read enhance performance Mode Sequence (Command EB) (SPI Mode) (104MHz)......... 61
Figure 38. 4 x I/O Read Performance Enhance Mode Sequence (Command EB) (QPI Mode) (104MHz)........ 62
Figure 39. Page Program (PP) Sequence (Command 02) (SPI Mode)............................................................ 62
Figure 40. Page Program (PP) Sequence (Command 02) (QPI Mode)............................................................ 63
Figure 41. 4 x I/O Page Program (4PP) Sequence (Command 38) (SPI Mode only)....................................... 63
Figure 42. Sector Erase (SE) Sequence (Command 20) (SPI Mode)............................................................... 64
Figure 43. Sector Erase (SE) Sequence (Command 20) (QPI Mode).............................................................. 64
Figure 44. Block Erase 32KB (BE32K) Sequence (Command 52) (SPI Mode)................................................ 64
Figure 45. Block Erase 32KB (BE32K) Sequence (Command 52) (QPI Mode)................................................ 64
Figure 46. Block Erase (BE) Sequence (Command D8) (SPI Mode)................................................................ 65
Figure 47. Block Erase (BE) Sequence (Command D8) (QPI Mode)............................................................... 65
Figure 48. Chip Erase (CE) Sequence (Command 60 or C7) (SPI Mode)........................................................ 65
Figure 49. Chip Erase (CE) Sequence (Command 60 or C7) (QPI Mode)....................................................... 65
P/N: PM1472
4
Rev. 2.1, September 29, 2016
MX25U1635E
Figure 50. Deep Power-down (DP) Sequence (Command B9) (SPI Mode)..................................................... 66
Figure 51. Deep Power-down (DP) Sequence (Command B9) (QPI Mode)..................................................... 66
Figure 52. RDP and Read Electronic Signature (RES) Sequence (Command AB) (SPI Mode)....................... 66
Figure 53. Release from Deep Power-down (RDP) Sequence (Command AB) (SPI Mode)............................ 67
Figure 54. Release from Deep Power-down (RDP) Sequence (Command AB) (QPI Mode)............................ 67
Figure 55. Read Electronic Manufacturer & Device ID (REMS) Sequence (Command 90) (SPI Mode only)... 68
Figure 56. Read Security Register (RDSCUR) Sequence (Command 2B) (SPI Mode).................................... 69
Figure 57. Read Security Register (RDSCUR) Sequence (Command 2B) (QPI Mode).................................... 69
Figure 58. Write Security Register (WRSCUR) Sequence (Command 2F) (SPI Mode).................................... 70
Figure 59. Write Security Register (WRSCUR) Sequence (Command 2F) (QPI Mode).................................... 70
Figure 60. Word Read Quad I/O (W4READ) Sequence (Command E7) (SPI Mode only, 84MHz)................... 71
Figure 61. Reset Sequence (SPI mode)............................................................................................................ 72
Figure 62. Reset Sequence (QPI mode)............................................................................................................ 72
Figure 63. Enable Quad I/O Sequence.............................................................................................................. 72
Figure 64. Suspend to Read Latency................................................................................................................. 73
Figure 65. Resume to Read Latency................................................................................................................. 73
Figure 66. Resume to Suspend Latency............................................................................................................ 73
Figure 67. Software Reset Recovery................................................................................................................. 73
Figure 68. Power-up Timing............................................................................................................................... 74
Table 16. Power-Up Timing and VWI Threshold................................................................................................ 74
12-1. Initial Delivery State.................................................................................................................................... 74
13. OPERATING CONDITIONS.................................................................................................................................. 75
Figure 69. AC Timing at Device Power-Up......................................................................................................... 75
Figure 70. Power-Down Sequence.................................................................................................................... 76
14. ERASE AND PROGRAMMING PERFORMANCE............................................................................................... 77
15. DATA RETENTION .............................................................................................................................................. 77
16. LATCH-UP CHARACTERISTICS......................................................................................................................... 77
17. ORDERING INFORMATION................................................................................................................................. 78
18. PART NAME DESCRIPTION................................................................................................................................ 79
19. PACKAGE INFORMATION................................................................................................................................... 80
19-1. 8-land USON (4x4mm)................................................................................................................................ 80
19-2. 8-pin SOP (150mil)...................................................................................................................................... 81
19-3. 8-pin SOP (200mil)...................................................................................................................................... 82
19-4. 8-land WSON (6x5mm)............................................................................................................................... 83
20. REVISION HISTORY ............................................................................................................................................ 84
P/N: PM1472
5
Rev. 2.1, September 29, 2016
MX25U1635E
16M-BIT [x 1/x 2/x 4] 1.8V CMOS MXSMIO® (SERIAL MULTI I/O) FLASH MEMORY
1. FEATURES
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Advanced Security Features
- Block lock protection
The BP0-BP3 status bit defines the size of the area
to be software protection against program and erase
instructions
- Additional 4k-bit secured OTP for unique identifier
• Auto Erase and Auto Program Algorithm
- Automatically erases and verifies data at selected
sector or block
- Automatically programs and verifies data at selected page by an internal algorithm that automatically times the program pulse widths (Any page to
be programed should have page in the erased state
first)
• Status Register Feature
• Command Reset
• Program/Erase Suspend
• Electronic Identification
- JEDEC 1-byte manufacturer ID and 2-byte device
ID
- RES command for 1-byte Device ID
- REMS command for 1-byte manufacturer ID and
1-byte device ID
• Support Serial Flash Discoverable Parameters
(SFDP) mode
GENERAL
• Supports Serial Peripheral Interface -- Mode 0 and
Mode 3
• 16,777,216 x 1 bit structure or 8,388,608 x 2 bits (two
I/O read mode) structure or 4,194,304 x 4 bits (four
I/O read mode) structure
• Equal Sectors with 4K byte each, or Equal Blocks
with 32K byte each or Equal Blocks with 64K byte
each
- Any Block can be erased individually
• Single Power Supply Operation
- 1.65 to 2.0 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
• Low Vcc write inhibit is from 1.0V to 1.4V
PERFORMANCE
• High Performance
- Fast read for SPI mode
- 1 I/O: 104MHz with 8 dummy cycles
- 2 I/O: 84MHz with 4 dummy cycles, equivalent
to 168MHz
- 4 I/O: 104MHz with 6 dummy cycles, equivalent
to 416MHz
- Fast read for QPI mode
- 4 I/O: 84MHz with 4 dummy cycles, equivalent
to 336MHz
- 4 I/O: 104MHz with 6 dummy cycles, equivalent
to 416MHz
- Fast program time: 1.2ms(typ.) and 3ms(max.)/
page (256-byte per page)
- Byte program time: 10us (typical)
- 8/16/32/64 byte Wrap-Around Burst Read Mode
- Fast erase time:
45ms (typ.)/sector (4K-byte per sector);
250ms(typ.) /block (32K-byte per block);
500ms(typ.) /block (64K-byte per block);
9s(typ.) /chip
• Low Power Consumption
- Low active read current: 20mA(max.) at 104MHz,
15mA(max.) at 84MHz
- Low active erase/programming current: 20mA (typ.)
- Standby current: 25uA (typ.)
• Deep Power Down: 2uA(typ.)
• Typical 100,000 erase/program cycles
• 20 years data retention
P/N: PM1472
HARDWARE FEATURES
• SCLK Input
- Serial clock input
• SI/SIO0
- Serial Data Input or Serial Data Input/Output for 2
x I/O read mode and 4 x I/O read mode
• SO/SIO1
- Serial Data Output or Serial Data Input/Output for
2 x I/O read mode and 4 x I/O read mode
• WP#/SIO2
- Hardware write protection or serial data Input/Output for 4 x I/O read mode
• NC/SIO3
- NC pin or Serial input & Output for 4 x I/O read
mode
• PACKAGE
- 8-pin SOP (150mil)
- 8-pin SOP (200mil)
- 8-land WSON (6x5mm)
- 8-land USON (4x4mm)
- All devices are RoHS Compliant and Halogenfree
6
Rev. 2.1, September 29, 2016
MX25U1635E
2. GENERAL DESCRIPTION
The MX25U1635E are 16,777,216 bit Serial NOR Flash memory, which is configured as 2,097,152 x 8 internally.
When it is in two or four I/O read mode, the structure becomes 8,388,608 bits x 2 or 4,194,304 bits x 4.
MX25U1635E feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus
while it is in single I/O mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial
data output (SO). Serial access to the device is enabled by CS# input.
When it is in two I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits
input and data output. When it is in four I/O read mode, the SI pin, SO pin, WP# pin and NC pin become SIO0 pin,
SIO1 pin, SIO2 pin and SIO3 pin for address/dummy bits input and data output.
The MX25U1635E MXSMIO® (Serial Multi I/O) provides sequential read operation on the whole chip.
After program/erase command is issued, auto program/ erase algorithms which program/ erase and verify the
specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256
bytes) basis, or word basis. Erase command is executed on 4K-byte sector, 32K-byte block, or 64K-byte block, or
whole chip basis.
To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read
command can be issued to detect completion status of a program or erase operation via WIP bit.
Advanced security features enhance the protection and security functions, please see security features section for
more details.
The MX25U1635E utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after
100,000 program and erase cycles.
P/N: PM1472
7
Rev. 2.1, September 29, 2016
MX25U1635E
Table 1. Additional Feature Comparison
Additional
Features
Read Performance
Protection and Security
SPI
QPI
Flexible Block
4K-bit security
1 I/O
2 I/O
4 I/O
4 I/O
4 I/O
4 I/O
Protection
OTP
(104 MHz) (84 MHz) (84 MHz) (104 MHz) (84 MHz) (104 MHz)
(BP0-BP3)
Part
Name
MX25U1635E
Additional
Features
Part
Name
MX25U1635E
P/N: PM1472
V
V
V
V
V
V
V
V
Identifier
RES
REMS
RDID
(command: (command: (command:
AB hex)
90 hex)
9F hex)
C2 35 (hex)
35 (hex)
C2 25 35
(if ADD=0)
8
QPIID
(Command:
AF hex)
C2 25 35
Rev. 2.1, September 29, 2016
MX25U1635E
3. PIN CONFIGURATIONS
4. PIN DESCRIPTION
8-LAND USON (4x4mm)
CS#
SO/SIO1
WP#/SIO2
GND
1
2
3
4
SYMBOL
CS#
VCC
NC/SIO3
SCLK
SI/SIO0
8
7
6
5
SI/SIO0
SO/SIO1
SCLK
WP#/SIO2
8-LAND WSON (6x5mm)
CS#
SO/SIO1
WP#/SIO2
GND
1
2
3
4
NC/SIO3
VCC
GND
VCC
NC/SIO3
SCLK
SI/SIO0
8
7
6
5
DESCRIPTION
Chip Select
Serial Data Input (for 1 x I/O)/ Serial
Data Input & Output (for 2xI/O or 4xI/
O read mode)
Serial Data Output (for 1 x I/O)/ Serial
Data Input & Output (for 2xI/O or 4xI/
O read mode)
Clock Input
Write Protection Active Low or Serial
Data Input & Output (for 4xI/O read
mode)
NC pin (Not connected) or Serial Data
Input & Output (for 4xI/O read mode)
+ 1.8V Power Supply
Ground
8-PIN SOP (150mil) / 8-PIN SOP (200mil)
CS#
SO/SIO1
WP#/SIO2
GND
P/N: PM1472
1
2
3
4
8
7
6
5
VCC
NC/SIO3
SCLK
SI/SIO0
9
Rev. 2.1, September 29, 2016
MX25U1635E
5. BLOCK DIAGRAM
X-Decoder
Address
Generator
SI/SIO0
SO/SIO1
SIO2 *
SIO3 *
WP# *
HOLD# *
RESET# *
CS#
SCLK
Memory Array
Y-Decoder
Data
Register
Sense
Amplifier
SRAM
Buffer
Mode
Logic
State
Machine
HV
Generator
Clock Generator
Output
Buffer
* Depends on part number options.
P/N: PM1472
10
Rev. 2.1, September 29, 2016
MX25U1635E
6. DATA PROTECTION
During power transition, there may be some false system level signals which result in inadvertent erasure or
programming. The device is designed to protect itself from these accidental write cycles.
The state machine will be reset as standby mode automatically during power up. In addition, the control register
architecture of the device constrains that the memory contents can only be changed after specific command
sequences have completed successfully.
In the following, there are several features to protect the system from the accidental write cycles during VCC powerup and power-down or from system noise.
• Power-on reset and tPUW: to avoid sudden power switch by system power supply transition, the power-on reset
and tPUW (internal timer) may protect the Flash.
• Valid command length checking: The command length will be checked whether it is at byte base and completed
on byte boundary.
• Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before
issung other commands to change data. The WEL bit will return to reset stage under following situation:
- Power-up
- Write Disable (WRDI) command completion
- Write Status Register (WRSR) command completion
- Page Program (PP) command completion
- Quad I/O Page Program (4PP) command completion
- Sector Erase (SE) command completion
- Block Erase 32KB (BE32K) command completion
- Block Erase (BE) command completion
- Chip Erase (CE) command completion
- Program/Erase Suspend
- Softreset command completion
- Write Security Register (WRSCUR) command completion
- Write Protection Selection (WPSEL) command completion
• Deep Power Down Mode: By entering deep power down mode, the flash device also is under protected from
writing all commands except Release from deep power down mode command (RDP) and Read Electronic
Signature command (RES) and softreset command.
• Advanced Security Features: there are some protection and security features which protect content from
inadvertent write and hostile access.
I. Block lock protection
- The Software Protected Mode (SPM) use (BP3, BP2, BP1, BP0) bits to allow part of memory to be protected
as read only. The protected area definition is shown as "Table 2. Protected Area Sizes", the protected areas are
more flexible which may protect various area by setting value of BP0-BP3 bits.
- The Hardware Proteced Mode (HPM) use WP#/SIO2 to protect the (BP3, BP2, BP1, BP0) bits and Status
Register Write Protect bit.
- In four I/O and QPI mode, the feature of HPM will be disabled.
P/N: PM1472
11
Rev. 2.1, September 29, 2016
MX25U1635E
Table 2. Protected Area Sizes
Status bit
Protect Level
BP3 BP2 BP1 BP0
0
0
0
0 0 (none)
0
0
0
1 1 (1block, protected block 31st)
0
0
1
0 2 (2blocks, protected block 30th~31st)
0
0
1
1 3 (4blocks, protected block 28th~31st)
0
1
0
0 4 (8blocks, protected block 24th~31st)
0
1
0
1 5 (16blocks, protected block 16th~31st)
0
1
1
0 6 (32blocks, protected all)
0
1
1
1 7 (32blocks, protected all)
1
0
0
0 8 (32blocks, protected all)
1
0
0
1 9 (32blocks, protected all)
1
0
1
0 10 (16blocks, protected block 0th~15th)
1
0
1
1 11 (24blocks, protected block 0th~23rd)
1
1
0
0 12 (28blocks, protected block 0th~27th)
1
1
0
1 13 (30blocks, protected block 0th~29th)
1
1
1
0 14 (31blocks, protected block 0th~30th)
1
1
1
1 15 (32blocks, protected all)
II. Additional 4K-bit secured OTP for unique identifier: to provide 4K-bit one-time program area for setting
device unique serial number - Which may be set by factory or system customer. Please refer to "Table 3. 4K-bit
Secured OTP Definition".
- Security register bit 0 indicates whether the chip is locked by factory or not.
- To program the 4K-bit secured OTP by entering 4K-bit secured OTP mode (with Enter Security OTP (ENSO)
command), and going through normal program procedure, and then exiting 4K-bit secured OTP mode by writing
Exit Security OTP (EXSO) command.
- Customer may lock-down the customer lockable secured OTP by writing WRSCUR(write security register)
command to set customer lock-down bit1 as "1". Please refer to "Table 10. Security Register Definition" for security
register bit definition and "Table 3. 4K-bit Secured OTP Definition" for address range definition.
- Note: Once lock-down whatever by factory or customer, it cannot be changed any more. While in 4K-bit secured
OTP mode, array access is not allowed.
Table 3. 4K-bit Secured OTP Definition
Address range
Size
Standard Factory Lock
xxx000~xxx00F
128-bit
ESN (electrical serial number)
xxx010~xxx1FF
3968-bit
N/A
P/N: PM1472
12
Customer Lock
Determined by customer
Rev. 2.1, September 29, 2016
MX25U1635E
7. Memory Organization
Table 4. Memory Organization
Block
(64KB)
31
Block
(32KB)
63
|
62
Sector
(4KB)
511
:
496
495
:
480
479
:
1FF000h
:
1F0000h
1EF000h
:
1E0000h
1DF000h
:
1FFFFFh
:
1F0FFFh
1EFFFFh
:
1E0FFFh
1DFFFFh
:
464
1D0000h
1D0FFFh
30
61
|
60
29
59
|
58
28
57
|
56
463
:
1CF000h
:
1CFFFFh
:
448
1C0000h
1C0FFFh
27
55
|
54
26
53
|
52
25
51
|
50
24
49
|
48
23
47
|
46
22
45
|
44
21
43
|
42
20
41
|
40
19
39
|
38
1BF000h
:
1B0000h
1AF000h
:
1A0000h
19F000h
:
190000h
18F000h
:
180000h
17F000h
:
170000h
16F000h
:
160000h
15F000h
:
150000h
14F000h
:
140000h
13F000h
:
130000h
12F000h
1BFFFFh
:
1B0FFFh
1AFFFFh
:
1A0FFFh
19FFFFh
:
190FFFh
18FFFFh
:
180FFFh
17FFFFh
:
170FFFh
16FFFFh
:
160FFFh
15FFFFh
:
150FFFh
14FFFFh
:
140FFFh
13FFFFh
:
130FFFh
12FFFFh
18
37
|
36
447
:
432
431
:
416
415
:
400
399
:
384
383
:
368
367
:
352
351
:
336
335
:
320
319
:
304
303
:
120000h
11F000h
:
120FFFh
11FFFFh
17
35
|
34
:
288
287
:
110000h
10F000h
:
110FFFh
10FFFFh
16
33
|
32
:
272
271
:
:
:
256
100000h
100FFFh
P/N: PM1472
Block
(64KB)
Address Range
15
13
Block
(32KB)
31
|
30
14
29
|
28
13
27
|
26
12
25
|
24
11
23
|
22
10
21
|
20
9
19
|
18
8
17
|
16
7
15
|
14
6
13
|
12
5
11
|
10
4
9
|
8
3
7
|
6
2
5
|
4
1
3
|
2
0
1
|
0
Sector
(4KB)
255
:
240
239
:
224
223
:
208
207
:
192
191
:
176
175
:
160
159
:
144
143
:
128
127
:
112
111
:
96
95
:
80
79
:
64
63
:
48
47
:
32
31
:
16
15
:
2
1
0
Address Range
0FF000h
:
0F0000h
0EF000h
:
0E0000h
0DF000h
:
0D0000h
0CF000h
:
0C0000h
0BF000h
:
0B0000h
0AF000h
:
0A0000h
09F000h
:
090000h
08F000h
:
080000h
07F000h
:
070000h
06F000h
:
060000h
05F000h
:
050000h
04F000h
:
040000h
03F000h
:
030000h
02F000h
:
020000h
01F000h
:
010000h
00F000h
:
002000h
001000h
000000h
0FFFFFh
:
0F0FFFh
0EFFFFh
:
0E0FFFh
0DFFFFh
:
0D0FFFh
0CFFFFh
:
0C0FFFh
0BFFFFh
:
0B0FFFh
0AFFFFh
:
0A0FFFh
09FFFFh
:
090FFFh
08FFFFh
:
080FFFh
07FFFFh
:
070FFFh
06FFFFh
:
060FFFh
05FFFFh
:
050FFFh
04FFFFh
:
040FFFh
03FFFFh
:
030FFFh
02FFFFh
:
020FFFh
01FFFFh
:
010FFFh
00FFFFh
:
002FFFh
001FFFh
000FFFh
Rev. 2.1, September 29, 2016
MX25U1635E
8. DEVICE OPERATION
1. Before a command is issued, status register should be checked to ensure device is ready for the intended
operation.
2. When incorrect command is inputted to this device, it enters standby mode and remains in standby mode until
next CS# falling edge. In standby mode, SO pin of the device is High-Z.
3. When correct command is inputted to this device, it enters active mode and remains in active mode until next
CS# rising edge.
4. Input data is latched on the rising edge of Serial Clock (SCLK) and data is shifted out on the falling edge of
SCLK. The difference of Serial mode 0 and mode 3 is shown as "Figure 1. Serial Modes Supported".
5. For the following instructions: RDID, RDSR, RDSCUR, READ, FAST_READ, RDSFDP, 2READ, 4READ, RES,
REMS, SQIID, RDBLOCK, the shifted-in instruction sequence is followed by a data-out sequence. After any bit
of data being shifted out, the CS# can be high. For the following instructions: WREN, WRDI, WRSR, SE, BE32K,
BE, CE, PP, 4PP, DP, ENSO, EXSO, WRSCUR, WPSEL, SBLK, SBULK, GBULK, SUSPEND, RESUME, NOP,
RSTEN, RST, EQIO, RSTQIO the CS# must go high exactly at the byte boundary; otherwise, the instruction will
be rejected and not executed.
6. While a Write Status Register, Program or Erase operation is in progress, access to the memory array is
neglected and will not affect the current operation of Write Status Register, Program, Erase.
Figure 1. Serial Modes Supported
CPOL
CPHA
shift in
(Serial mode 0)
0
0
SCLK
(Serial mode 3)
1
1
SCLK
SI
shift out
MSB
SO
MSB
Note:
CPOL indicates clock polarity of Serial master, CPOL=1 for SCLK high while idle, CPOL=0 for SCLK low while not
transmitting. CPHA indicates clock phase. The combination of CPOL bit and CPHA bit decides which Serial mode is
supported.
P/N: PM1472
14
Rev. 2.1, September 29, 2016
MX25U1635E
8-1. Quad Peripheral Interface (QPI) Read Mode
QPI protocol enables user to take full advantage of Quad I/O Serial Flash by providing the Quad I/O interface in
command cycles, address cycles and as well as data output cycles.
Enable QPI mode
By issuing 35H command, the QPI mode is enabled.
Figure 2. Enable QPI Sequence (Command 35H)
CS#
MODE 3
SCLK
0
1
2
3
4
5
6
7
MODE 0
SIO0
35
SIO[3:1]
P/N: PM1472
15
Rev. 2.1, September 29, 2016
MX25U1635E
Reset QPI mode
By issuing F5H command, the device is reset to 1-I/O SPI mode.
Figure 3. Reset QPI Mode (Command F5H)
CE#
SCLK
SIO[3:0]
F5
Fast QPI Read mode (FASTRDQ)
To increase the code transmission speed, the device provides a "Fast QPI Read Mode" (FASTRDQ). By issuing
command code EBH, the FASTRDQ mode is enabled. The number of dummy cycle increase from 4 to 6 cycles. The
read cycle frequency will increase from 84MHz to 104MHz.
Figure 4. Fast QPI Read Mode (FASTRDQ) (Command EBH)
CS#
MODE 3
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
MODE 3
SCLK
MODE 0
SIO[3:0]
MODE 0
EB
A5 A4 A3 A2 A1 A0
X
X
X
X
X
H0 L0 H1 L1 H2 L2 H3 L3
MSB
Data Out
Data In
P/N: PM1472
X
16
Rev. 2.1, September 29, 2016
MX25U1635E
9. COMMAND DESCRIPTION
Table 5. Command Set
Read Commands
I/O
Read Mode
Command
(byte)
Clock rate
(MHz)
1st byte
2nd byte
3rd byte
4th byte
5th byte
Action
1
SPI
2
SPI
2READ (2
FAST READ
READ
RDSFDP
x I/O read
* (fast read
(normal read)
(Read SFDP) command)
data)
Note1
33
1
SPI
104
1
SPI
104
4
SPI
W4READ
84
03 (hex)
AD1(8)
AD2(8)
AD3(8)
0B (hex)
5A (hex)
BB (hex)
AD1(8)
AD1(8)
AD1(4)
AD2(8)
AD2(8)
AD2(4)
AD3(8)
AD3(8)
AD3(4)
Dummy(8)
Dummy(8)
Dummy(4)
n bytes read n bytes read Read SFDP n bytes read
out until CS# out until CS#
mode
out by 2 x I/
goes high
goes high
O until CS#
goes high
4
4
4
SPI
QPI
QPI
4READ *
4READ *
FAST READ
(4 x I/O read
(4 x I/O read
* (fast read
command)
command)
data)
Note1
Note1
84
104
84
104
E7 (hex)
AD1(2)
AD2(2)
AD3(2)
Dummy(4)
Quad I/O
read with
4 dummy
cycles in
84MHz
EB (hex)
AD1(2)
AD2(2)
AD3(2)
Dummy(6)
Quad I/O
read with
6 dummy
cycles in
104MHz
0B (hex)
AD1(2)
AD2(2)
AD3(2)
Dummy(4)
n bytes read
out until CS#
goes high
EB (hex)
AD1(2)
AD2(2)
AD3(2)
Dummy(6)
Quad I/O
read with
6 dummy
cycles in
104MHz
Program/Erase Commands
Command
(byte)
1st byte
2nd byte
3rd byte
4th byte
Action
Command
(byte)
1st byte
2nd byte
3rd byte
4th byte
Action
P/N: PM1472
WREN*
WRDI *
RDSR * (read WRSR * (write
4PP (quad
SE *
BE 32K * (block
(write enable) (write disable) status register) status register) page program) (sector erase) erase 32KB)
06 (hex)
38 (hex)
20 (hex)
52 (hex)
AD1
AD1
AD1
AD2
AD2
AD2
AD3
AD3
AD3
quad input to
to erase the
to erase the
resets the
to read out the to write new
sets the (WEL)
program the selected sector selected 32K
write enable
(WEL) write
values of the values of the
block
latch bit
enable latch bit status register status register selected page
BE * (block
erase 64KB)
04 (hex)
CE * (chip
erase)
05 (hex)
PP * (page
program)
01 (hex)
Values
RDP * (Release
DP * (Deep
from deep
power down)
power down)
D8 (hex)
60 or C7 (hex)
02 (hex)
AD1
AD1
AD2
AD2
AD3
AD3
to erase the to erase whole to program the
selected block
chip
selected page
17
B9 (hex)
AB (hex)
enters deep
power down
mode
release from
deep power
down mode
PGM/ERS
Suspend *
(Suspends
Program/
Erase)
B0 (hex)
PGM/ERS
Resume *
(Resumes
Program/
Erase)
30 (hex)
Rev. 2.1, September 29, 2016
MX25U1635E
Security/ID/Mode Setting/Reset Commands
RDID
RES (read
Command (byte) (read identificelectronic ID)
ation)
1st byte
2nd byte
3rd byte
4th byte
5th byte
Action
COMMAND
(byte)
1st byte
2nd byte
3rd byte
4th byte
Action
COMMAND
(byte)
1st byte
2nd byte
3rd byte
4th byte
Action
9F (hex)
AB (hex)
x
x
x
REMS (read
RDSCUR *
WRSCUR *
electronic
ENSO * (enter EXSO * (exit
(read security (write security
manufacturer secured OTP) secured OTP)
register)
register)
& device ID)
90 (hex)
B1 (hex)
C1 (hex)
2B (hex)
2F (hex)
x
x
ADD (Note 2)
outputs JEDEC to read out
output the
to enter the to exit the 4K1-byte Device Manufacturer 4K-bit secured bit secured
ID: 1-byte
OTP mode
Manufact-urer
ID
ID & Device ID OTP mode
ID & 2-byte
Device ID
SBULK *
SBLK * (single
(single block
block lock
unlock)
36 (hex)
39 (hex)
AD1
AD1
AD2
AD2
AD3
AD3
individual block
individual
(64K-byte) or
block (64Kbyte) or sector sector (4K(4K-byte) write byte) unprotect
protect
RST *
(Reset
Memory)
99 (hex)
RDBLOCK *
GBLK * (gang GBULK * (gang
(block protect
block lock)
block unlock)
read)
3C (hex)
7E (hex)
98 (hex)
AD1
AD2
AD3
read individual whole chip
whole chip
unprotect
block or sector write protect
write protect
status
EQIO
RSTQIO
QPIID
(Enable Quad (Reset Quad I/
(QPI ID Read)
I/O)
O)
35 (hex)
F5 (hex)
AF (hex)
Entering the Exiting the QPI
QPI mode
mode
ID in QPI
interface
to read value to set the lockof security
down bit as
register
"1" (once lockdown, cannot
be update)
NOP * (No
Operation)
RSTEN *
(Reset Enable)
00 (hex)
66 (hex)
SBL *
(Set Burst
Length)
C0 (hex)
Value
WPSEL *
(Write Protect
Selection)
68 (hex)
to set Burst
length
to enter
and enable
individal block
protect mode
Note 1: Command set highlighted with (*) are supported both in SPI and QPI mode.
Note 2: The count base is 4-bit for ADD(2) and Dummy(2) because of 2 x I/O. And the MSB is on SI/SIO1 which is different from
1 x I/O condition.
Note 3: ADD=00H will output the manufacturer ID first and ADD=01H will output device ID first.
Note 4: It is not recommended to adopt any other code not in the command definition table, which will potentially enter the hidden mode.
Note 5: Before executing RST command, RSTEN command must be executed. If there is any other command to interfere, the
reset operation will be disabled.
P/N: PM1472
18
Rev. 2.1, September 29, 2016
MX25U1635E
9-1. Write Enable (WREN)
The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP, 4PP,
SE, BE32K, BE, CE, and WRSR, which are intended to change the device content WEL bit should be set every time
after the WREN instruction setting the WEL bit.
The sequence of issuing WREN instruction is: CS# goes low→sending WREN instruction code→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in
SPI mode. (Please refer to "Figure 23. Write Enable (WREN) Sequence (Command 06) (SPI Mode)" and "Figure 24. Write
Enable (WREN) Sequence (Command 06) (QPI Mode)")
9-2. Write Disable (WRDI)
The Write Disable (WRDI) instruction is to reset Write Enable Latch (WEL) bit.
The sequence of issuing WRDI instruction is: CS# goes low→sending WRDI instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in
SPI mode. (Please refer to "Figure 26. Write Disable (WRDI) Sequence (Command 04) (QPI Mode)" and
"Figure 25. Write Disable (WRDI) Sequence (Command 04) (SPI Mode)" )
The WEL bit is reset by following situations:
- Power-up
- Completion of Write Disable (WRDI) instruction
- Completion of Write Status Register (WRSR) instruction
- Completion of Page Program (PP) instruction
- Completion of Quad Page Program (4PP) instruction
- Completion of Sector Erase (SE) instruction
- Completion of Block Erase 32KB (BE32K) instruction
- Completion of Block Erase (BE) instruction
- Completion of Chip Erase (CE) instruction
- Completion of Write Security Register (WRSCUR) instruction
- Completion of Single Block Lock (SBLK) instruction
- Completion of Gang Block Lock (GBLK) instruction
- Completion of Write Protect Selection (WPSEL) instruction
- Pgm/Ers Suspend
9-3. Read Identification (RDID)
The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The Macronix
Manufacturer ID and Device ID are listed as "Table 9. ID Definitions" ID Definitions.
The sequence of issuing RDID instruction is: CS# goes low→ sending RDID instruction code→24-bits ID data out
on SO→ to end RDID operation can drive CS# to high at any time during data out.
While Program/Erase operation is in progress, it will not decode the RDID instruction, therefore there's no effect on
the cycle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby
stage.
9-4. Read Status Register (RDSR)
The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even
in program/erase/write status register condition). It is recommended to check the Write in Progress (WIP) bit before
sending a new instruction when a program, erase, or write status register operation is in progress.
P/N: PM1472
19
Rev. 2.1, September 29, 2016
MX25U1635E
The sequence of issuing RDSR instruction is: CS# goes low→ sending RDSR instruction code→ Status Register data
out on SO.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when
during SPI mode. (Please refer to "Figure 28. Read Status Register (RDSR) Sequence (Command 05) (SPI Mode)" and
"Figure 29. Read Status Register (RDSR) Sequence (Command 05) (QPI Mode)")
For user to check if Program/Erase operation is finished or not, RDSR instruction flow are shown as follows:
Figure 5. Program/ Erase flow with read array data
start
WREN command
RDSR command*
WEL=1?
No
Yes
Program/erase command
Write program data/address
(Write erase address)
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
Read array data
(same address of PGM/ERS)
Verify OK?
No
Yes
Program/erase successfully
Program/erase
another block?
No
Program/erase fail
Yes
* Issue RDSR to check BP[3:0].
* If WPSEL = 1, issue RDBLOCK to check the block status.
Program/erase completed
P/N: PM1472
20
Rev. 2.1, September 29, 2016
MX25U1635E
Figure 6. Program/ Erase flow without read array data (read P_FAIL/E_FAIL flag)
start
WREN command
RDSR command*
WEL=1?
No
Yes
Program/erase command
Write program data/address
(Write erase address)
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
RDSCUR command
Yes
P_FAIL/E_FAIL =1 ?
No
Program/erase fail
Program/erase successfully
Program/erase
another block?
No
Yes
* Issue RDSR to check BP[3:0].
* If WPSEL = 1, issue RDBLOCK to check the block status.
Program/erase completed
P/N: PM1472
21
Rev. 2.1, September 29, 2016
MX25U1635E
Figure 7. WRSR flow
start
WREN command
RDSR command
WEL=1?
No
Yes
WRSR command
Write status register data
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
Verify OK?
No
Yes
WRSR successfully
P/N: PM1472
WRSR fail
22
Rev. 2.1, September 29, 2016
MX25U1635E
The definitions of the status register bits are as below:
WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write
status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status
register progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/write status
register cycle.
WEL bit. The Write Enable Latch (WEL) bit is a volatile bit that is set to “1” by the WREN instruction. WEL needs to be
set to “1” before the device can accept program and erase instructions, otherwise the program and erase instructions
are ignored. WEL automatically clears to “0” when a program or erase operation completes. To ensure that both WIP
and WEL are “0” and the device is ready for the next program or erase operation, it is recommended that WIP be
confirmed to be “0” before checking that WEL is also “0”. If a program or erase instruction is applied to a protected
memory area, the instruction will be ignored and WEL will clear to “0”.
BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits, non-volatile bits, indicate the protected area
(as defined in "Table 2. Protected Area Sizes") of the device to against the program/erase instruction without hardware
protection mode being set. To write the Block Protect (BP3, BP2, BP1, BP0) bits requires the Write Status Register (WRSR)
instruction to be executed. Those bits define the protected area of the memory to against Page Program (PP), Sector
Erase (SE), Block Erase 32KB (BE32K), Block Erase (BE) and Chip Erase (CE) instructions (only if Block Protect bits
(BP3:BP0) set to 0, the CE instruction can be executed). The BP3, BP2, BP1, BP0 bits are "0" as default. Which is unprotected.
QE bit. The Quad Enable (QE) bit, non-volatile bit, performs SPI Quad modes when it is reset to "0" (factory default)
to enable WP# or is set to "1" to enable Quad SIO2 and SIO3. QE bit is only valid for SPI mode. When operate in SPI
mode, and quad IO read is desired (for command EBh/E7h, or quad IO program, 38h). WRSR command has to be
set the through Status Register bit 6, the QE bit. Then the SPI Quad I/O commands (EBh/E7h/38h) will be accepted
by flash. If QE bit is not set, SPI Quad I/O commands (EBh/E7h/38h) will be invalid commands, the device will not
respond to them. Once QE bit is set, all SPI commands are valid. 1I/O commands and 2 I/O commands can be issued
no matter QE bit is "0" or "1". When in QPI mode, QE bit will not affect the operation of QPI mode at all. Therefore
either "0" or "1" value of QE bit does not affect the QPI mode operation.
SRWD bit. The Status Register Write Disable (SRWD) bit, non-volatile bit, is operated together with Write Protection
(WP#/SIO2) pin for providing hardware protection mode. The hardware protection mode requires SRWD sets to 1 and
WP#/SIO2 pin signal is low stage. In the hardware protection mode, the Write Status Register (WRSR) instruction is
no longer accepted for execution and the SRWD bit and Block Protect bits (BP3, BP2, BP1, BP0) are read only. The
SRWD bit defaults to be "0".
Table 6. Status Register
bit7
bit6
SRWD (status
register write
protect)
QE
(Quad
Enable)
1=status
1=Quad
register write
Enable
disabled
0=status
0=not Quad
register write
Enable
enabled
Non-volatile
bit
Non-volatile
bit
bit5
BP3
(level of
protected
block)
bit4
BP2
(level of
protected
block)
bit3
BP1
(level of
protected
block)
bit2
BP0
(level of
protected
block)
(note 1)
(note 1)
(note 1)
(note 1)
Non-volatile
bit
Non-volatile
bit
Non-volatile
bit
Non-volatile
bit
bit1
bit0
WEL
WIP
(write enable
(write in
latch)
progress bit)
1=write
1=write
enabled
operation
0=not write 0=not in write
enabled
operation
volatile bit
volatile bit
Note 1: Please refer to the "Table 2. Protected Area Sizes".
P/N: PM1472
23
Rev. 2.1, September 29, 2016
MX25U1635E
9-5. Write Status Register (WRSR)
The WRSR instruction is for changing the values of Status Register Bits. Before sending WRSR instruction,
the Write Enable (WREN) instruction must be decoded and executed to set the Write Enable Latch (WEL) bit in
advance. The WRSR instruction can change the value of Block Protect (BP3, BP2, BP1, BP0) bits to define the
protected area of memory (as shown in "Table 2. Protected Area Sizes"). The WRSR also can set or reset the Quad
enable (QE) bit and set or reset the Status Register Write Disable (SRWD) bit in accordance with Write Protection (WP#/
SIO2) pin signal, but has no effect on bit1(WEL) and bit0 (WIP) of the status register. The WRSR instruction cannot
be executed once the Hardware Protected Mode (HPM) is entered.
The sequence of issuing WRSR instruction is: CS# goes low→ sending WRSR instruction code→ Status Register
data on SI→CS# goes high. (Please refer to "Figure 30. Write Status Register (WRSR) Sequence (Command 01) (SPI
Mode)" and "Figure 31. Write Status Register (WRSR) Sequence (Command 01) (QPI Mode)")
The CS# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed.
The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes high. The Write
in Progress (WIP) bit still can be check out during the Write Status Register cycle is in progress. The WIP sets 1
during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the Write Enable Latch (WEL)
bit is reset.
Table 7. Protection Modes
Mode
Software protection
mode (SPM)
Hardware protection
mode (HPM)
Status register condition
WP# and SRWD bit status
Memory
Status register can be written
in (WEL bit is set to "1") and
the SRWD, BP0-BP3
bits can be changed
WP#=1 and SRWD bit=0, or
WP#=0 and SRWD bit=0, or
WP#=1 and SRWD=1
The protected area
cannot
be program or erase.
The SRWD, BP0-BP3 of
status register bits cannot be
changed
WP#=0, SRWD bit=1
The protected area
cannot
be program or erase.
Note:
1. As defined by the values in the Block Protect (BP3, BP2, BP1, BP0) bits of the Status Register, as shown in "Table 2.
Protected Area Sizes".
As the above table showing, the summary of the Software Protected Mode (SPM) and Hardware Protected Mode (HPM).
Software Protected Mode (SPM):
- When SRWD bit=0, no matter WP#/SIO2 is low or high, the WREN instruction may set the WEL bit and can
change the values of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1,
BP0, is at software protected mode (SPM).
- When SRWD bit=1 and WP#/SIO2 is high, the WREN instruction may set the WEL bit can change the values
of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1, BP0, is at software
protected mode (SPM)
Note:
If SRWD bit=1 but WP#/SIO2 is low, it is impossible to write the Status Register even if the WEL bit has previously
been set. It is rejected to write the Status Register and not be executed.
P/N: PM1472
24
Rev. 2.1, September 29, 2016
MX25U1635E
Hardware Protected Mode (HPM):
- When SRWD bit=1, and then WP#/SIO2 is low (or WP#/SIO2 is low before SRWD bit=1), it enters the hardware
protected mode (HPM). The data of the protected area is protected by software protected mode by BP3, BP2,
BP1, BP0 and hardware protected mode by the WP#/SIO2 to against data modification.
Note:
To exit the hardware protected mode requires WP#/SIO2 driving high once the hardware protected mode is entered.
If the WP#/SIO2 pin is permanently connected to high, the hardware protected mode can never be entered; only
can use software protected mode via BP3, BP2, BP1, BP0.
If the system enter QPI or set QE=1, the feature of HPM will be disabled.
9-6. Read Data Bytes (READ)
The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on
the falling edge of SCLK at a maximum frequency fR. The first address byte can be at any location. The address
is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can
be read out at a single READ instruction. The address counter rolls over to 0 when the highest address has been
reached.
The sequence of issuing READ instruction is: CS# goes low→sending READ instruction code→ 3-byte address
on SI→ data out on SO→to end READ operation can use CS# to high at any time during data out. (Please refer to
"Figure 32. Read Data Bytes (READ) Sequence (Command 03) (SPI Mode only) (33MHz)")
9-7. Read Data Bytes at Higher Speed (FAST_READ)
The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and
data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address byte can be at
any location. The address is automatically increased to the next higher address after each byte data is shifted out,
so the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when
the highest address has been reached.
Read on SPI Mode The sequence of issuing FAST_READ instruction is: CS# goes low→ sending FAST_READ
instruction code→ 3-byte address on SI→1-dummy byte (default) address on SI→ data out on SO→ to end FAST_
READ operation can use CS# to high at any time during data out. (Please refer to "Figure 33. Read at Higher Speed (FAST_
READ) Sequence (Command 0B) (SPI Mode) (104MHz)")
Read on QPI Mode The sequence of issuing FAST_READ instruction in QPI mode is: CS# goes low→ sending
FAST_READ instruction, 2 cycles→ 24-bit address interleave on SIO3, SIO2, SIO1 & SIO0→4 dummy cycles→data
out interleave on SIO3, SIO2, SIO1 & SIO0→ to end QPI FAST_READ operation can use CS# to high at any time
during data out. (Please refer to "Figure 34. Read at Higher Speed (FAST_READ) Sequence (Command 0B) (QPI Mode)
(84MHz)")
In the performance-enhancing mode, P[7:4] must be toggling with P[3:0] ; likewise P[7:0]=A5h,5Ah,F0h or 0Fh can
make this mode continue and reduce the next 4READ instruction. Once P[7:4] is no longer toggling with P[3:0];
likewise P[7:0]=FFh,00h,AAh or 55h and afterwards CS# is raised and then lowered, the system then will escape
from performance enhance mode and return to normal operation.
While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any
impact on the Program/Erase/Write Status Register current cycle.
P/N: PM1472
25
Rev. 2.1, September 29, 2016
MX25U1635E
9-8. 2 x I/O Read Mode (2READ)
The 2READ instruction enable double throughput of Serial NOR Flash in read mode. The address is latched on
rising edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a
maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the
next higher address after each byte data is shifted out, so the whole memory can be read out at a single 2READ
instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 2READ
instruction, the following address/dummy/data out will perform as 2-bit instead of previous 1-bit.
The sequence of issuing 2READ instruction is: CS# goes low→ sending 2READ instruction→ 24-bit address
interleave on SIO1 & SIO0→ 4 dummy cycles on SIO1 & SIO0→ data out interleave on SIO1 & SIO0→ to end
2READ operation can use CS# to high at any time during data out (Please refer to "Figure 35. 2 x I/O Read Mode
Sequence (Command BB) (SPI Mode only) (84MHz)").
While Program/Erase/Write Status Register cycle is in progress, 2READ instruction is rejected without any impact on
the Program/Erase/Write Status Register current cycle.
9-9. 4 x I/O Read Mode (4READ)
The 4READ instruction enable quad throughput of Serial NOR Flash in read mode. A Quad Enable (QE) bit of status
Register must be set to "1" before sending the 4READ instruction. The address is latched on rising edge of SCLK,
and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency
fQ. The first address byte can be at any location. The address is automatically increased to the next higher address
after each byte data is shifted out, so the whole memory can be read out at a single 4READ instruction. The address
counter rolls over to 0 when the highest address has been reached. Once writing 4READ instruction, the following
address/dummy/data out will perform as 4-bit instead of previous 1-bit.
4 x I/O Read on SPI Mode (4READ) The sequence of issuing 4READ instruction is: CS# goes low→ sending
4READ instruction→ 24-bit address interleave on SIO3, SIO2, SIO1 & SIO0→2+4 dummy cycles→data out
interleave on SIO3, SIO2, SIO1 & SIO0→ to end 4READ operation can use CS# to high at any time during data out.
Please refer to "Figure 36. 4 x I/O Read Mode Sequence (Command EB) (SPI Mode) (104MHz)").
W4READ instruction (E7) is also available is SPI mode for 4 I/O read. The sequence is similar to 4READ, but
with only 4 dummy cycles. The clock rate runs at 84MHz. Please refer to "Figure 60. Word Read Quad I/O (W4READ)
Sequence (Command E7) (SPI Mode only, 84MHz)".
4 x I/O Read on QPI Mode (4READ) The 4READ instruction also support on QPI command mode. The sequence of
issuing 4READ instruction QPI mode is: CS# goes low→ sending 4READ instruction→ 24-bit address interleave on
SIO3, SIO2, SIO1 & SIO0→2+4 dummy cycles→data out interleave on SIO3, SIO2, SIO1 & SIO0→ to end 4READ
operation can use CS# to high at any time during data out (Please refer to "Figure 36. 4 x I/O Read Mode Sequence (Command
EB) (SPI Mode) (104MHz)").
Another sequence of issuing 4READ instruction is especially useful in random access: CS# goes low→send 4READ
instruction→3-bytes address interleave on SIO3, SIO2, SIO1 & SIO0→performance enhance toggling bit P[7:0]→
4 dummy cycles (Default)→data out until CS# goes high→CS# goes low (The following 4READ instruction is not
allowed, hence 8 cycles of 4READ can be saved comparing to normal 4READ mode)→24-bit random access
address (Please refer to "Figure 37. 4 x I/O Read enhance performance Mode Sequence (Command EB) (SPI Mode) (104MHz)"
and "Figure 38. 4 x I/O Read Performance Enhance Mode Sequence (Command EB) (QPI Mode) (104MHz)").
In the performance-enhancing mode, P[7:4] must be toggling with P[3:0] ; likewise P[7:0]=A5h, 5Ah, F0h or 0Fh
can make this mode continue and reduce the next 4READ instruction. Once P[7:4] is no longer toggling with P[3:0];
likewise P[7:0]=FFh,00h,AAh or 55h and afterwards CS# is raised and then lowered, the system then will escape
from performance enhance mode and return to normal operation.
While Program/Erase/Write Status Register cycle is in progress, 4READ instruction is rejected without any impact on
the Program/Erase/Write Status Register current cycle.
P/N: PM1472
26
Rev. 2.1, September 29, 2016
MX25U1635E
9-10. Burst Read
The Burst Read feature allows applications to fill a cache line with a fixed length of data without using multiple read
commands. Burst Read is disabled by default at power-up or reset. Burst Read is enabled by setting the Burst
Length. When the Burst Length is set, reads will wrap on the selected boundary (8/16/32/64-bytes) containing the
initial target address. For example if an 8-byte Wrap Depth is selected, reads will wrap on the 8-byte-page-aligned
boundary containing the initial read address.
To set the Burst Length, drive CS# low → send SET BURST LENGTH instruction code → send WRAP CODE →
drive CS# high. Refer to the table below for valid 8-bit Wrap Codes and their corresponding Wrap Depth.
Table 8. Wrap Around Definition Table
Data
1xh
1xh
1xh
1xh
Wrap Around
No
No
No
No
Wrap Depth
X
X
X
X
Data
00h
01h
02h
03h
Wrap Around
Yes
Yes
Yes
Yes
Wrap Depth
8-byte
16-byte
32-byte
64-byte
Once Burst Read is enabled, it will remain enabled until the device is power-cycled or reset. The SPI and QPI mode
4READ read commands support the wrap around feature after Burst Read is enabled. To change the wrap depth,
resend the Burst Read instruction with the appropriate Wrap Code. To disable Burst Read, send the Burst Read
instruction with Wrap Code 1xh. QPI “0Bh” “EBh” and SPI “EBh” “E7h” support wrap around feature after wrap
around is enabled. Both SPI (8 clocks) and QPI (2 clocks) command cycle can be accepted by this instruction. The
SIO[3:1] are don't care during SPI mode.
Figure 8. Burst Read (SPI Mode)
CS#
0
1
2
3
1
1
0
4
5
6
7
8
9
0
0
0
0
H
H
10
11
12
13
H
L
L
14
15
SCLK
SIO
0
H
L
L
Figure 9. Burst Read (QPI Mode)
CS#
0
1
2
3
C1
C0
H0
L0
SCLK
SIO[3:0]
MSB
LSB
Note: MSB=Most Significant Bit
LSB=Least Significant Bit
P/N: PM1472
27
Rev. 2.1, September 29, 2016
MX25U1635E
9-11. Performance Enhance Mode
The device could waive the command cycle bits if the two cycle bits after address cycle toggles. (Please refer to
"Figure 37. 4 x I/O Read enhance performance Mode Sequence (Command EB) (SPI Mode) (104MHz)" and "Figure 38. 4 x I/O
Read Performance Enhance Mode Sequence (Command EB) (QPI Mode) (104MHz)").
Performance enhance mode is supported in both SPI and QPI mode.
In QPI mode, “EBh” “0Bh” and SPI “EBh” “E7h” commands support enhance mode. The performance enhance
mode is not supported in dual I/O mode.
After entering enhance mode, following CS# go high, the device will stay in the read mode and treat CSB go low of
the first clock as address instead of command cycle.
To exit enhance mode, a new fast read command whose first two dummy cycles is not toggle then exit. Or issue
”FFh” data cycle to exit enhance mode.
If the system controller is being Reset during operation, the flash device will return to the standard SPI operation.
Upon Reset of main chip, SPI instruction would be issued from the system. Instructions like Read ID (9Fh) or Fast
Read (0Bh) would be issued.
9-12. Sector Erase (SE)
The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". The instruction is used for
any 4K-byte sector. A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit
before sending the Sector Erase (SE). Any address of the sector (Please refer to "Table 4. Memory Organization" )
is a valid address for Sector Erase (SE) instruction. The CS# must go high exactly at the byte boundary (the least
significant bit of the address been latched-in); otherwise, the instruction will be rejected and not executed.
Address bits [Am-A12] (Am is the most significant address) select the sector address.
The sequence of issuing SE instruction is: CS# goes low→ sending SE instruction code→ 3-byte address on SI→
CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode. (Please refer to "Figure 42. Sector Erase (SE) Sequence (Command 20) (SPI Mode)", "Figure 43.
Sector Erase (SE) Sequence (Command 20) (QPI Mode)")
The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Sector Erase cycle is in progress. The WIP sets during the tSE
timing, and clears when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
sector is protected by BP3, BP2, BP1, BP0 bits, the Sector Erase (SE) instruction will not be executed on the sector.
9-13. Block Erase (BE32K)
The Block Erase (BE32K) instruction is for erasing the data of the chosen block to be "1". The instruction is used
for 32K-byte block erase operation. A Write Enable (WREN) instruction must be executed to set the Write Enable
Latch (WEL) bit before sending the Block Erase (BE32K). Any address of the block (Please refer to "Table 4. Memory
Organization") is a valid address for Block Erase (BE32K) instruction. The CS# must go high exactly at the byte
boundary (the least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not
executed.
The sequence of issuing BE32K instruction is: CS# goes low→ sending BE32K instruction code→ 3-byte address
on SI→CS# goes high.
P/N: PM1472
28
Rev. 2.1, September 29, 2016
MX25U1635E
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode. (Please refer to "Figure 44. Block Erase 32KB (BE32K) Sequence (Command 52) (SPI Mode)"and
"Figure 45. Block Erase 32KB (BE32K) Sequence (Command 52) (QPI Mode)")
The self-timed Block Erase Cycle time (tBE32K) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Block Erase cycle is in progress. The WIP sets during the tBE32K
timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
block is protected by BP3, BP2, BP1, BP0 bits, the Block Erase (BE32K) instruction will not be executed on the
block.
9-14. Block Erase (BE)
The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used
for 64K-byte block erase operation. A Write Enable (WREN) instruction must be executed to set the Write Enable
Latch (WEL) bit before sending the Block Erase (BE). Any address of the block (Please refer to "Table 4. Memory
Organization") is a valid address for Block Erase (BE) instruction. The CS# must go high exactly at the byte boundary (the
least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed.
The sequence of issuing BE instruction is: CS# goes low→ sending BE instruction code→ 3-byte address on SI→
CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode. (Please refer to "Figure 46. Block Erase (BE) Sequence (Command D8) (SPI Mode)" and "Figure
47. Block Erase (BE) Sequence (Command D8) (QPI Mode)")
The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Block Erase cycle is in progress. The WIP sets during the tBE
timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
block is protected by BP3, BP2, BP1, BP0 bits, the Block Erase (BE) instruction will not be executed on the block.
9-15. Chip Erase (CE)
The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN)
instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The CS#
must go high exactly at the byte boundary, otherwise the instruction will be rejected and not executed.
The sequence of issuing CE instruction is: CS# goes low→sending CE instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode. (Please refer to "Figure 48. Chip Erase (CE) Sequence (Command 60 or C7) (SPI Mode)", "Figure
49. Chip Erase (CE) Sequence (Command 60 or C7) (QPI Mode)")
The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Chip Erase cycle is in progress. The WIP sets during the tCE
timing, and clears when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
chip is protected by BP3, BP2, BP1, BP0 bits, the Chip Erase (CE) instruction will not be executed. It will be only
executed when BP3, BP2, BP1, BP0 all set to "0".
9-16. Page Program (PP)
P/N: PM1472
29
Rev. 2.1, September 29, 2016
MX25U1635E
The Page Program (PP) instruction is for programming memory bits to "0". One to 256 bytes can be sent to the
device to be programmed. A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL)
bit before sending the Page Program (PP). If more than 256 data bytes are sent to the device, only the last 256
data bytes will be accepted and the previous data bytes will be disregarded. The Page Program instruction requires
that all the data bytes fall within the same 256-byte page. The low order address byte A[7:0] specifies the starting
address within the selected page. Bytes that will cross a page boundary will wrap to the beginning of the selected
page. The device can accept (256 minus A[7:0]) data bytes without wrapping. If 256 data bytes are going to be
programmed, A[7:0] should be set to 0.
The sequence of issuing PP instruction is: CS# goes low→ sending PP instruction code→ 3-byte address on SI→ at
least 1-byte on data on SI→ CS# goes high. (Please refer to "Figure 39. Page Program (PP) Sequence (Command 02) (SPI
Mode)" and "Figure 40. Page Program (PP) Sequence (Command 02) (QPI Mode)")
The CS# must be kept to low during the whole Page Program cycle; The CS# must go high exactly at the byte
boundary( the latest eighth bit of data being latched in), otherwise the instruction will be rejected and will not be
executed.
The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Page Program cycle is in progress. The WIP sets during the tPP
timing, and clears when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
page is protected by BP3, BP2, BP1, BP0 bits, the Page Program (PP) instruction will not be executed.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-17. 4 x I/O Page Program (4PP)
The Quad Page Program (4PP) instruction is for programming the memory to be "0". A Write Enable (WREN)
instruction must be executed to set the Write Enable Latch (WEL) bit and Quad Enable (QE) bit must be set to
"1" before sending the Quad Page Program (4PP). The Quad Page Programming takes four pins: SIO0, SIO1,
SIO2, and SIO3 as address and data input, which can improve programmer performance and the effectiveness of
application of lower clock less than Max. fRSCLK. For system with faster clock, the Quad page program cannot
provide more performance, because the required internal page program time is far more than the time data flows in.
Therefore, we suggest that while executing this command (especially during sending data), user can slow the clock
speed down to Max. fRSCLK below. The other function descriptions are as same as standard page program.
The sequence of issuing 4PP instruction is: CS# goes low→ sending 4PP instruction code→ 3-byte address on
SIO[3:0]→ at least 1-byte on data on SIO[3:0]→CS# goes high.
P/N: PM1472
30
Rev. 2.1, September 29, 2016
MX25U1635E
9-18. Deep Power-down (DP)
The Deep Power-down (DP) instruction places the device into a minimum power consumption state, Deep Powerdown mode, in which the quiescent current is reduced from ISB1 to ISB2.
The sequence of issuing DP instruction: CS# goes low→ send DP instruction code→ CS# goes high. The CS# must
go high at the byte boundary (after exactly eighth bits of the instruction code have been latched-in); otherwise the
instruction will not be executed. Both SPI (8 clocks) and QPI (2 clocks) command cycle can be accepted by this
instruction. SIO[3:1] are "don't care". (Please refer to "Figure 50. Deep Power-down (DP) Sequence (Command B9) (SPI
Mode)" and "Figure 51. Deep Power-down (DP) Sequence (Command B9) (QPI Mode)")
After CS# goes high there is a delay of tDP before the device transitions from Stand-by mode to Deep Powerdown
mode and before the current reduces from ISB1 to ISB2. Once in Deep Power-down mode, all instructions will be
ignored except Release from Deep Power-down (RDP).
The device exits Deep Power-down mode and returns to Stand-by mode if it receives a Release from Deep Powerdown (RDP) instruction, power-cycle, or reset. Please refer to "Figure 53. Release from Deep Power-down (RDP)
Sequence (Command AB) (SPI Mode)" and "Figure 54. Release from Deep Power-down (RDP) Sequence (Command AB) (QPI
Mode)".
9-19. Release from Deep Power-down (RDP), Read Electronic Signature (RES)
The Release from Deep Power-down (RDP) instruction is completed by driving Chip Select (CS#) High. When Chip
Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was not previously in the
Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously in
the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES2, and Chip
Select (CS#) must remain High for at least tRES2(max), as specified in "Table 15. AC Characteristics". Once in the
Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. The
RDP instruction is only for releasing from Deep Power Down Mode.
RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as "Table 9. ID
Definitions" on next page. This is not the same as RDID instruction. It is not recommended to use for new design. For
new design, please use RDID instruction.
The sequence is shown as "Figure 52. RDP and Read Electronic Signature (RES) Sequence (Command AB) (SPI Mode)",
"Figure 53. Release from Deep Power-down (RDP) Sequence (Command AB) (SPI Mode)" and "Figure 54. Release from Deep
Power-down (RDP) Sequence (Command AB) (QPI Mode)". Even in Deep power-down mode, the RDP and RES are also
allowed to be executed, only except the device is in progress of program/erase/write cycle; there's no effect on the
current program/erase/write cycle in progress.
SPI (8 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode.
The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs repeatedly if
continuously send the additional clock cycles on SCLK while CS# is at low. If the device was not previously in Deep
Power-down mode, the device transition to standby mode is immediate. If the device was previously in Deep Powerdown mode, there's a delay of tRES2 to transit to standby mode, and CS# must remain to high at least tRES2(max).
Once in the standby mode, the device waits to be selected, so it can be receive, decode, and execute instruction.
P/N: PM1472
31
Rev. 2.1, September 29, 2016
MX25U1635E
9-20. Read Electronic Manufacturer ID & Device ID (REMS)
The REMS instruction returns both the JEDEC assigned manufacturer ID and the device ID. The Device ID values
are listed in "Table 9. ID Definitions".
The REMS instruction is initiated by driving the CS# pin low and sending the instruction code "90h" followed by two
dummy bytes and one address byte (A7~A0). After which the manufacturer ID for Macronix (C2h) and the device
ID are shifted out on the falling edge of SCLK with the most significant bit (MSB) first as shown in "Figure 55. Read
Electronic Manufacturer & Device ID (REMS) Sequence (Command 90) (SPI Mode only)". If the address byte is 00h, the
manufacturer ID will be output first, followed by the device ID. If the address byte is 01h, then the device ID will
be output first, followed by the manufacturer ID. While CS# is low, the manufacturer and device IDs can be read
continuously, alternating from one to the other. The instruction is completed by driving CS# high.
9-21. QPI ID Read (QPIID)
User can execute this QPIID Read instruction to identify the Device ID and Manufacturer ID. The sequence of issue
QPIID instruction is CS# goes low→sending QPI ID instruction→Data out on SO→CS# goes high. Most significant
bit (MSB) first.
After the command cycle, the device will immediately output data on the falling edge of SCLK. The manufacturer ID,
memory type, and device ID data byte will be output continuously, until the CS# goes high.
Table 9. ID Definitions
Command Type
RDID (JEDEC ID)
MX25U1635E
Memory Type
25
Electronic ID
35
Device ID
35
Manufacturer ID
C2
RES
REMS
P/N: PM1472
Manufacturer ID
C2
32
Memory Density
35
Rev. 2.1, September 29, 2016
MX25U1635E
9-22. Enter Secured OTP (ENSO)
The ENSO instruction is for entering the additional 4K-bit secured OTP mode. While the device is in 4K-bit secured
OTP mode, main array access is not available. The additional 4K-bit secured OTP is independent from main array,
and may be used to store unique serial number for system identifier. After entering the Secured OTP mode, follow
standard read or program procedure to read out the data or update data. The Secured OTP data cannot be updated
again once it is lock-down.
The sequence of issuing ENSO instruction is: CS# goes low→ sending ENSO instruction to enter Secured OTP
mode→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Please note that WRSR/WRSCUR commands are not acceptable during the access of secure OTP region, once
security OTP is lock down, only read related commands are valid.
9-23. Exit Secured OTP (EXSO)
The EXSO instruction is for exiting the additional 4K-bit secured OTP mode.
The sequence of issuing EXSO instruction is: CS# goes low→ sending EXSO instruction to exit Secured OTP
mode→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-24. Read Security Register (RDSCUR)
The RDSCUR instruction is for reading the value of Security Register bits. The Read Security Register can be read
at any time (even in program/erase/write status register/write security register condition) and continuously.
The sequence of issuing RDSCUR instruction is : CS# goes low→sending RDSCUR instruction→Security Register
data out on SO→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode. Please see "Figure 56. Read Security Register (RDSCUR) Sequence (Command 2B) (SPI Mode)" &
"Figure 57. Read Security Register (RDSCUR) Sequence (Command 2B) (QPI Mode)".
The definition of the Security Register bits is as below:
Secured OTP Indicator bit. The Secured OTP indicator bit shows the chip is locked by factory or not. When it is
"0", it indicates non-factory lock; "1" indicates factory-lock.
Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set to "1" for
customer lock-down purpose. However, once the bit is set to "1" (lock-down), the LDSO bit and the 4K-bit Secured
OTP area cannot be updated any more.
P/N: PM1472
33
Rev. 2.1, September 29, 2016
MX25U1635E
Table 10. Security Register Definition
bit7
bit6
bit5
bit4
bit3
WPSEL
E_FAIL
P_FAIL
Reserved
0=normal
WP mode
1=individual
mode
(default=0)
0=normal
Erase
succeed
1=indicate
Erase failed
(default=0)
0=normal
Program
succeed
1=indicate
Program
failed
(default=0)
-
0=Erase
is not
suspended
1= Erase
suspended
(default=0)
Non-volatile
bit (OTP)
Volatile bit
Volatile bit
Volatile bit
Volatile bit
bit2
ESB
PSB
(Erase
(Program
Suspend bit) Suspend bit)
bit1
bit0
LDSO
Secured OTP
(indicate if
indicator bit
lock-down)
0 = not lock0=Program
down
0 = nonis not
1 = lock-down
factory
suspended
(cannot
lock
1= Program
program/
1 = factory
suspended
lock
erase
(default=0)
OTP)
Non-volatile
Non-volatile
Volatile bit
bit
bit (OTP)
(OTP)
9-25. Write Security Register (WRSCUR)
The WRSCUR instruction is for setting the values of Security Register Bits. The WREN (Write Enable) instruction is
required before issuing WRSCUR instruction. The WRSCUR instruction may change the values of bit1 (LDSO bit)
for customer to lock-down the 4K-bit Secured OTP area. Once the LDSO bit is set to "1", the Secured OTP area
cannot be updated any more. The LDSO bit is an OTP bit. Once the LDSO bit is set, the value of LDSO bit can not
be altered any more.
The sequence of issuing WRSCUR instruction is :CS# goes low→ sending WRSCUR instruction → CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode. Please see "Figure 58. Write Security Register (WRSCUR) Sequence (Command 2F) (SPI Mode)" &
"Figure 59. Write Security Register (WRSCUR) Sequence (Command 2F) (QPI Mode)".
The CS# must go high exactly at the boundary; otherwise, the instruction will be rejected and not executed.
P/N: PM1472
34
Rev. 2.1, September 29, 2016
MX25U1635E
9-26. Write Protection Selection (WPSEL)
There are two write protection methods, (1) BP protection mode (2) individual block protection mode. If WPSEL=0,
flash is under BP protection mode . If WPSEL=1, flash is under individual block protection mode. The default value
of WPSEL is “0”. WPSEL command can be used to set WPSEL=1. Please note that WPSEL is an OTP bit. Once
WPSEL is set to 1, there is no chance to recovery WPSEL back to “0”. If the flash is put on BP mode, the
individual block protection mode is disabled. Contrarily, if flash is on the individual block protection mode, the BP
mode is disabled.
Every time after the system is powered-on, the Security Register bit 7 is checked. If WPSEL=1, all the
blocks and sectors will be write protected by default. User may only unlock the blocks or sectors via SBULK
and GBULK instructions. Program or erase functions can only be operated after the Unlock instruction is executed.
BP protection mode, WPSEL=0:
ARRAY is protected by BP3~BP0 and BP3~BP0 bits are protected by “SRWD=1 and WP#=0”, where SRWD is bit 7
of status register that can be set by WRSR command.
Individual block protection mode, WPSEL=1:
Blocks are individually protected by their own SRAM lock bits which are set to “1” after power up. SBULK and SBLK
command can set SRAM lock bit to “0” and “1”. When the system accepts and executes WPSEL instruction, bit
7 in the security register will be set. It will activate SBLK, SBULK, RDBLOCK, GBLK, GBULK etc instructions to
conduct block lock protection and replace the original Software Protect Mode (SPM) use (BP3~BP0) indicated block
methods. Under the individual block protection mode (WPSEL=1), hardware protection is performed by driving
WP#=0. Once WP#=0 all array blocks/sectors are protected regardless of the contents of SRAM lock bits.
The sequence of issuing WPSEL instruction is: CS# goes low → sending WPSEL instruction to enter the individual
block protect mode → CS# goes high.
WPSEL instruction function flow is as follows:
Figure 10. BP and SRWD if WPSEL=0
WPB pin
BP3
BP2
BP1
BP0
SRWD
64KB
64KB
64KB
(1) BP3~BP0 is used to define the protection group region.
(The protected area size see "Table 2. Protected Area Sizes")
(2) “SRWD=1 and WPB=0” is used to protect BP3~BP0. In this
case, SRWD and BP3~BP0 of status register bits can not
be changed by WRSR
.
.
.
64KB
P/N: PM1472
35
Rev. 2.1, September 29, 2016
MX25U1635E
Figure 11. The individual block lock mode is effective after setting WPSEL=1
SRAM
SRAM
…
…
TOP 4KBx16
Sectors
4KB
4KB
4KB
SRAM
SRAM
…
64KB
SRAM
…
……
Uniform
64KB blocks
64KB
4KB
SRAM
…
…
Bottom
4KBx16
Sectors
4KB
SRAM
• Power-Up: All SRAM bits=1 (all blocks are default protected).
All array cannot be programmed/erased
• SBLK/SBULK(36h/39h):
- SBLK(36h): Set SRAM bit=1 (protect) : array can not be
programmed/erased
- SBULK(39h): Set SRAM bit=0 (unprotect): array can be
programmed/erased
- All top 4KBx16 sectors and bottom 4KBx16 sectors
and other 64KB uniform blocks can be protected and
unprotected SRAM bits individually by SBLK/SBULK
command set.
• GBLK/GBULK(7Eh/98h):
- GBLK(7Eh): Set all SRAM bits=1,whole chip are protected
and cannot be programmed/erased.
- GBULK(98h): Set all SRAM bits=0,whole chip are
unprotected and can be programmed/erased.
- All sectors and blocks SRAM bits of whole chip can be
protected and unprotected at one time by GBLK/GBULK
command set.
• RDBLOCK(3Ch):
- use RDBLOCK mode to check the SRAM bits status after
SBULK /SBLK/GBULK/GBLK command set.
SBULK / SBLK / GBULK / GBLK / RDBLOCK
P/N: PM1472
36
Rev. 2.1, September 29, 2016
MX25U1635E
Figure 12. WPSEL Flow
start
WREN command
RDSCUR(2Bh) command
Yes
WPSEL=1?
No
WPSEL disable,
block protected by BP[3:0]
WPSEL(68h) command
RDSR command
WIP=0?
No
Yes
RDSCUR(2Bh) command
WPSEL=1?
No
Yes
WPSEL set successfully
WPSEL set fail
WPSEL enable.
Block protected by individual lock
(SBLK, SBULK, … etc).
P/N: PM1472
37
Rev. 2.1, September 29, 2016
MX25U1635E
9-27. Single Block Lock/Unlock Protection (SBLK/SBULK)
These instructions are only effective after WPSEL was executed. The SBLK instruction is for write protection a
specified block (or sector) of memory, using AMAX-A16 or (AMAX-A12) address bits to assign a 64Kbyte block (or 4K
bytes sector) to be protected as read only. The SBULK instruction will cancel the block (or sector) write protection
state. This feature allows user to stop protecting the entire block (or sector) through the chip unprotect command
(GBULK).
The WREN (Write Enable) instruction is required before issuing SBLK/SBULK instruction.
The sequence of issuing SBLK/SBULK instruction is: CS# goes low → send SBLK/SBULK (36h/39h)
instruction→send 3 address bytes assign one block (or sector) to be protected on SI pin → CS# goes high. The CS#
must go high exactly at the byte boundary, otherwise the instruction will be rejected and not be executed.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
SBLK/SBULK instruction function flow is as follows:
Figure 13. Block Lock Flow
Start
RDSCUR(2Bh) command
WPSEL=1?
No
WPSEL command
Yes
WREN command
SBLK command
( 36h + 24bit address )
RDSR command
WIP=0?
No
Yes
RDBLOCK command
( 3Ch + 24bit address )
Data = FFh ?
No
Yes
Block lock successfully
Lock another block?
Block lock fail
Yes
No
Block lock
P/N: PM1472
completed
38
Rev. 2.1, September 29, 2016
MX25U1635E
Figure 14. Block Unlock Flow
start
RDSCUR(2Bh) command
WPSEL=1?
No
WPSEL command
Yes
WREN command
SBULK command
( 39h + 24bit address )
RDSR command
No
WIP=0?
Yes
RDBLOCK command to verify
( 3Ch + 24bit address )
Data = FF ?
Yes
No
Block unlock successfully
Unlock another block?
Block unlock fail
Yes
Unlock block completed?
P/N: PM1472
39
Rev. 2.1, September 29, 2016
MX25U1635E
9-28. Read Block Lock Status (RDBLOCK)
This instruction is only effective after WPSEL was executed. The RDBLOCK instruction is for reading the status
of protection lock of a specified block (or sector), using AMAX-A16 (or AMAX-A12) address bits to assign a 64K bytes
block (4K bytes sector) and read protection lock status bit which the first byte of Read-out cycle. The status bit is "1"
to indicate that this block has be protected, that user can read only but cannot write/program /erase this block. The
status bit is "0" to indicate that this block hasn't be protected, and user can read and write this block.
The sequence of issuing RDBLOCK instruction is: CS# goes low → send RDBLOCK (3Ch) instruction → send 3
address bytes to assign one block on SI pin → read block's protection lock status bit on SO pin → CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-29. Gang Block Lock/Unlock (GBLK/GBULK)
These instructions are only effective after WPSEL was executed. The GBLK/GBULK instruction is for enable/disable
the lock protection block of the whole chip.
The WREN (Write Enable) instruction is required before issuing GBLK/GBULK instruction.
The sequence of issuing GBLK/GBULK instruction is: CS# goes low → send GBLK/GBULK (7Eh/98h) instruction
→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The CS# must go high exactly at the byte boundary, otherwise, the instruction will be rejected and not be executed.
9-30. Program/Erase Suspend/Resume
The device allow the interruption of Sector-Erase, Block-Erase or Page-Program operations and conduct other
operations. Details as follows.
To enter the suspend/resume mode: issuing B0h for suspend; 30h for resume (SPI/QPI all acceptable)
Read security register bit2 (PSB) and bit3 (ESB) (please refer to "Table 10. Security Register Definition") to check
suspend ready information.
For "Suspend to Read", "Resume to Read", "Resume to Suspend" timing specification please note "Figure 64.
Suspend to Read Latency", "Figure 65. Resume to Read Latency" and "Figure 66. Resume to Suspend Latency".
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
P/N: PM1472
40
Rev. 2.1, September 29, 2016
MX25U1635E
9-31. Erase Suspend
Erase suspend allow the interruption of all erase operations.
After erase suspend, WEL bit will be clear, only read related, resume and reset command can be accepted
unconditionally. (including: 03h, 0Bh, BBh, EBh, E7h, 9Fh, AFh, 90h, 05h, 2Bh, B1h, C1h, 5Ah, 3Ch, 30h, 66h, 99h,
C0h, 35h, F5h, 00h, ABh)
For erase suspend to program operation, the programming command (38, 02) can be accepted under conditions as
follows:
The device is divided into 4 banks, each bank's density is 4Mb. While conducting erase suspend in one bank, the
programming operation that follows can only be conducted in one of the other banks and cannot be conducted in the
bank executing the suspend operation. The boundaries of the banks are illustrated as below table.
MX25U1635E
BANK (4M bit)
Address Range
3
180000h-1FFFFFh
2
100000h-17FFFFh
1
080000h-0FFFFFh
0
000000h-07FFFFh
After erase suspend command has been issued, latency time 18us is needed before issue another command. For
"Suspend to Read", "Resume to Read", "Resume to Suspend" timing specification please note "Figure 64. Suspend to
Read Latency", "Figure 65. Resume to Read Latency" and "Figure 66. Resume to Suspend Latency".
Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use ESB to identify the
state of flash memory. After the flash memory is suspended by Erase Suspend command, ESB is set to "1". ESB is
cleared to "0" after erase operation resumes.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
When ESB bit is issued, the Write Enable Latch (WEL) bit will be reset.
See "Figure 64. Suspend to Read Latency" for Suspend to Read latency.
9-32. Program Suspend
Program suspend allows the interruption of all program operations.
After program suspend, WEL bit will be cleared, only read related, resume and reset command can be accepted.
(including: 03h, 0Bh, BBh, EBh, E7h, 9Fh, AFh, 90h, 05h, 2Bh, B1h, C1h, 5Ah, 3Ch, 30h, 66h, 99h, C0h, 35h, F5h,
00h, ABh)
After program suspend command has been issued, latency time 18us is needed before issue another command.
For "Suspend to Read", "Resume to Read", "Resume to Suspend" timing specification please note "Figure 64.
Suspend to Read Latency", "Figure 65. Resume to Read Latency" and "Figure 66. Resume to Suspend Latency".
Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may use PSB to identify the
state of flash memory. After the flash memory is suspended by Program Suspend command, PSB is set to "1". PSB
is cleared to "0" after program operation resumes.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
P/N: PM1472
41
Rev. 2.1, September 29, 2016
MX25U1635E
9-33. Write-Resume
The Write operation is being resumed when Write-Resume instruction issued. ESB or PSB (suspend status bit) in
Status register will be changed back to “0”
The operation of Write-Resume is as follows: CS# drives low → send write resume command cycle (30H) → drive
CS# high. By polling Busy Bit in status register, the internal write operation status could be checked to be completed
or not. The user may also wait the time lag of TSE, TBE, TPP for Sector-erase, Block-erase or Page-programming.
WREN (command "06" is not required to issue before resume. Resume to another suspend operation requires
latency time. Please refer to "Figure 66. Resume to Suspend Latency".
Please note that, if "performance enhance mode" is executed during suspend operation, the device can not be
resume. To restart the write command, disable the "performance enhance mode" is required. After the "performance
enhance mode" is disable, the write-resume command is effective.
9-34. No Operation (NOP)
The "No Operation" command is only able to terminate the Reset Enable (RSTEN) command and will not affect any
other command.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-35. Software Reset (Reset-Enable (RSTEN) and Reset (RST))
The Software Reset operation combines two instructions: Reset-Enable (RSTEN) command and Reset (RST)
command. It returns the device to a standby mode. All the volatile bits and settings will be cleared then, which
makes the device return to the default status as power on.
To execute Reset command (RST), the Reset-Enable (RSTEN) command must be executed first to perform the
Reset operation. If there is any other command to interrupt after the Reset-Enable command, the Reset-Enable will
be invalid.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode. Please refer to "Figure 61. Reset Sequence (SPI mode)" and "Figure 62. Reset Sequence (QPI
mode)".
If the Reset command is executed during program or erase operation, the operation will be disabled, the data under
processing could be damaged or lost.
The reset time is different depending on the last operation. Longer latency time is required to recover from a
program operation than from other operations.
9-36. Reset Quad I/O (RSTQIO)
To reset the QPI mode, the RSTQIO (F5H) command is required. After the RSTQIO command is issued, the device
returns from QPI mode (4 I/O interface in command cycles) to SPI mode (1 I/O interface in command cycles).
Note:
For EQIO and RSTQIO commands, CS# high width has to follow "write spec" tSHSL for next instruction.
P/N: PM1472
42
Rev. 2.1, September 29, 2016
MX25U1635E
9-37. Read SFDP Mode (RDSFDP)
The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional
and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables
can be interrogated by host system software to enable adjustments needed to accommodate divergent features
from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on
CFI.
The sequence of issuing RDSFDP instruction is CS# goes low→send RDSFDP instruction (5Ah)→send 3 address
bytes on SI pin→send 1 dummy byte on SI pin→read SFDP code on SO→to end RDSFDP operation can use CS#
to high at any time during data out.
SFDP is a JEDEC Standard, JESD216.
Figure 15. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
SO
24 BIT ADDRESS
23 22 21
5Ah
3
2
1
0
High-Z
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Dummy Cycle
SI
7
6
5
4
3
2
1
0
DATA OUT 2
DATA OUT 1
SO
7
6
5
3
2
1
0
7
MSB
MSB
P/N: PM1472
4
43
6
5
4
3
2
1
0
7
MSB
Rev. 2.1, September 29, 2016
MX25U1635E
Table 11. Signature and Parameter Identification Data Values
SFDP Table below is for MX25U1635EM1I-10G, MX25U1635EM2I-10G, MX25U1635EZNI-10G and
MX25U1635EZUI-10G
Description
SFDP Signature
Comment
Fixed: 50444653h
Add (h) DW Add Data (h/b) Data
(Byte)
(Bit)
(Note1)
(h)
00h
07:00
53h
53h
01h
15:08
46h
46h
02h
23:16
44h
44h
03h
31:24
50h
50h
SFDP Minor Revision Number
Start from 00h
04h
07:00
00h
00h
SFDP Major Revision Number
Start from 01h
This number is 0-based. Therefore,
0 indicates 1 parameter header.
05h
15:08
01h
01h
06h
23:16
01h
01h
07h
31:24
FFh
FFh
00h: it indicates a JEDEC specified
header.
08h
07:00
00h
00h
Start from 00h
09h
15:08
00h
00h
Start from 01h
0Ah
23:16
01h
01h
How many DWORDs in the
Parameter table
0Bh
31:24
09h
09h
0Ch
07:00
30h
30h
0Dh
15:08
00h
00h
0Eh
23:16
00h
00h
0Fh
31:24
FFh
FFh
it indicates Macronix manufacturer
ID
10h
07:00
C2h
C2h
Start from 00h
11h
15:08
00h
00h
Start from 01h
12h
23:16
01h
01h
How many DWORDs in the
Parameter table
13h
31:24
04h
04h
14h
07:00
60h
60h
15h
15:08
00h
00h
16h
23:16
00h
00h
17h
31:24
FFh
FFh
Number of Parameter Headers
Unused
ID number (JEDEC)
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Parameter Table Pointer (PTP)
First address of JEDEC Flash
Parameter table
Unused
ID number
(Macronix manufacturer ID)
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Parameter Table Pointer (PTP)
First address of Macronix Flash
Parameter table
Unused
P/N: PM1472
44
Rev. 2.1, September 29, 2016
MX25U1635E
Table 12. Parameter Table (0): JEDEC Flash Parameter Tables
SFDP Table below is for MX25U1635EM1I-10G, MX25U1635EM2I-10G, MX25U1635EZNI-10G and
MX25U1635EZUI-10G
Description
Comment
Block/Sector Erase sizes
00: Reserved, 01: 4KB erase,
10: Reserved,
11: not support 4KB erase
Write Granularity
0: 1Byte, 1: 64Byte or larger
Write Enable Instruction Required 0: not required
1: required 00h to be written to the
for Writing to Volatile Status
status register
Registers
Add (h) DW Add Data (h/b)
(Byte)
(Bit)
(Note1)
01b
02
1b
03
0b
30h
0: use 50h opcode,
1: use 06h opcode
Write Enable Opcode Select for
Note: If target flash status register is
Writing to Volatile Status Registers
nonvolatile, then bits 3 and 4 must
be set to 00b.
Contains 111b and can never be
Unused
changed
4KB Erase Opcode
01:00
31h
Data
(h)
E5h
04
0b
07:05
111b
15:08
20h
16
0b
18:17
00b
19
0b
20
1b
20h
(1-1-2) Fast Read (Note2)
0=not support 1=support
Address Bytes Number used in
addressing flash array
Double Transfer Rate (DTR)
Clocking
00: 3Byte only, 01: 3 or 4Byte,
10: 4Byte only, 11: Reserved
(1-2-2) Fast Read
0=not support 1=support
(1-4-4) Fast Read
0=not support 1=support
21
1b
(1-1-4) Fast Read
0=not support 1=support
22
0b
23
1b
33h
31:24
FFh
37h:34h
31:00
00FF FFFFh
0=not support 1=support
32h
Unused
Unused
Flash Memory Density
(1-4-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states (Note3)
Clocks) not support
(1-4-4) Fast Read Number of
000b: Mode Bits not support
Mode Bits (Note4)
38h
(1-4-4) Fast Read Opcode
39h
(1-1-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(1-1-4) Fast Read Number of
000b: Mode Bits not support
Mode Bits
3Ah
(1-1-4) Fast Read Opcode
3Bh
P/N: PM1472
45
04:00
0 0100b
07:05
010b
15:08
EBh
20:16
0 0000b
23:21
000b
31:24
FFh
B0h
FFh
44h
EBh
00h
FFh
Rev. 2.1, September 29, 2016
MX25U1635E
SFDP Table below is for MX25U1635EM1I-10G, MX25U1635EM2I-10G, MX25U1635EZNI-10G and
MX25U1635EZUI-10G
Description
Comment
(1-1-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(1-1-2) Fast Read Number of
000b: Mode Bits not support
Mode Bits
(1-1-2) Fast Read Opcode
Add (h) DW Add Data (h/b)
(Byte)
(Bit)
(Note1)
3Ch
3Dh
(1-2-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(1-2-2) Fast Read Number of
000b: Mode Bits not support
Mode Bits
3Eh
(1-2-2) Fast Read Opcode
3Fh
(2-2-2) Fast Read
0=not support 1=support
Unused
(4-4-4) Fast Read
0=not support 1=support
40h
Unused
04:00
0 0000b
07:05
000b
15:08
FFh
20:16
0 0100b
23:21
000b
31:24
BBh
00
0b
03:01
111b
04
1b
07:05
111b
Data
(h)
00h
FFh
04h
BBh
FEh
Unused
43h:41h
31:08
FFh
FFh
Unused
45h:44h
15:00
FFh
FFh
20:16
0 0000b
23:21
000b
(2-2-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(2-2-2) Fast Read Number of
000b: Mode Bits not support
Mode Bits
46h
(2-2-2) Fast Read Opcode
47h
31:24
FFh
FFh
49h:48h
15:00
FFh
FFh
20:16
0 0100b
23:21
010b
Unused
00h
(4-4-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(4-4-4) Fast Read Number of
000b: Mode Bits not support
Mode Bits
4Ah
(4-4-4) Fast Read Opcode
4Bh
31:24
EBh
EBh
4Ch
07:00
0Ch
0Ch
4Dh
15:08
20h
20h
4Eh
23:16
0Fh
0Fh
4Fh
31:24
52h
52h
50h
07:00
10h
10h
51h
15:08
D8h
D8h
52h
23:16
00h
00h
53h
31:24
FFh
FFh
Sector Type 1 Size
Sector/block size = 2^N bytes (Note5)
0x00b: this sector type doesn't exist
Sector Type 1 erase Opcode
Sector Type 2 Size
Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist
Sector Type 2 erase Opcode
Sector Type 3 Size
Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist
Sector Type 3 erase Opcode
Sector Type 4 Size
Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist
Sector Type 4 erase Opcode
P/N: PM1472
46
44h
Rev. 2.1, September 29, 2016
MX25U1635E
Table 13. Parameter Table (1): Macronix Flash Parameter Tables
SFDP Table below is for MX25U1635EM1I-10G, MX25U1635EM2I-10G, MX25U1635EZNI-10G and
MX25U1635EZUI-10G
Description
Comment
Add (h) DW Add Data (h/b)
(Byte)
(Bit)
(Note1)
Data
(h)
Vcc Supply Maximum Voltage
2000h=2.000V
2700h=2.700V
3600h=3.600V
61h:60h
07:00
15:08
00h
20h
00h
20h
Vcc Supply Minimum Voltage
1650h=1.650V
2250h=2.250V
2350h=2.350V
2700h=2.700V
63h:62h
23:16
31:24
50h
16h
50h
16h
H/W Reset# pin
0=not support 1=support
00
0b
H/W Hold# pin
0=not support 1=support
01
0b
Deep Power Down Mode
0=not support 1=support
02
1b
S/W Reset
0=not support 1=support
03
1b
S/W Reset Opcode
Reset Enable (66h) should be
issued before Reset Opcode
Program Suspend/Resume
0=not support 1=support
12
1b
Erase Suspend/Resume
0=not support 1=support
13
1b
14
1b
15
1b
66h
23:16
C0h
C0h
67h
31:24
64h
64h
65h:64h
Unused
Wrap-Around Read mode
0=not support 1=support
Wrap-Around Read mode Opcode
11:04
1001 1001b F99Ch
(99h)
Wrap-Around Read data length
08h:support 8B wrap-around read
16h:8B&16B
32h:8B&16B&32B
64h:8B&16B&32B&64B
Individual block lock
0=not support 1=support
00
1b
Individual block lock bit
(Volatile/Nonvolatile)
0=Volatile 1=Nonvolatile
01
0b
09:02
0011 0110b
(36h)
10
0b
11
1b
Individual block lock Opcode
Individual block lock Volatile
protect bit default protect status
0=protect 1=unprotect
Secured OTP
0=not support 1=support
Read Lock
0=not support 1=support
12
0b
Permanent Lock
0=not support 1=support
13
0b
Unused
15:14
11b
Unused
31:16
FFh
FFh
31:00
FFh
FFh
Unused
6Bh:68h
6Fh:6Ch
C8D9h
MX25U1635EBAI-10G-SFDP_2014-04-10
P/N: PM1472
47
Rev. 2.1, September 29, 2016
MX25U1635E
Note 1: h/b is hexadecimal or binary.
Note 2: (x-y-z) means I/O mode nomenclature used to indicate the number of active pins used for the opcode (x),
address (y), and data (z). At the present time, the only valid Read SFDP instruction modes are: (1-1-1), (2-2-2),
and (4-4-4)
Note 3: Wait States is required dummy clock cycles after the address bits or optional mode bits.
Note 4: Mode Bits is optional control bits that follow the address bits. These bits are driven by the system controller
if they are specified. (eg,read performance enhance toggling bits)
Note 5: 4KB=2^0Ch,32KB=2^0Fh,64KB=2^10h
Note 6: All unused and undefined area data is blank FFh for SFDP Tables that are defined in Parameter
Identification Header. All other areas beyond defined SFDP Table are reserved by Macronix.
P/N: PM1472
48
Rev. 2.1, September 29, 2016
MX25U1635E
10. POWER-ON STATE
The device is at the following states when power-up:
- Standby mode (please note it is not deep power-down mode)
- Write Enable Latch (WEL) bit is reset
The device must not be selected during power-up and power-down stage until the VCC reaches the following levels:
- VCC minimum at power-up stage and then after a delay of tVSL
- GND at power-down
Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level.
An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change
during power up state. When VCC is lower than VWI (POR threshold voltage value), the internal logic is reset and
the flash device has no response to any command.
For further protection on the device, after VCC reaching the VWI level, a tPUW time delay is required before the
device is fully accessible for commands like write enable (WREN), page program (PP), quad page program (4PP),
sector erase (SE), block erase 32KB (BE32K), block erase (BE), chip erase (CE), WRSCUR and write status
register (WRSR). If the VCC does not reach the VCC minimum level, the correct operation is not guaranteed. The
write, erase, and program command should be sent after the below time delay:
- tPUW after VCC reached VWI level
- tVSL after VCC reached VCC minimum level
The device can accept read command after VCC reached VCC minimum and a time delay of tVSL, even time of
tPUW has not passed.
Please refer to the figure of "Figure 68. Power-up Timing".
Note:
- To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is
recommended. (generally around 0.1uF)
- At power-down stage, the VCC drops below VWI level, all operations are disable and device has no response to
any command. The data corruption might occur during this stage if a write, program, erase cycle is in progress.
P/N: PM1472
49
Rev. 2.1, September 29, 2016
MX25U1635E
11. ELECTRICAL SPECIFICATIONS
11-1. Absolute Maximum Ratings
Rating
Value
Ambient Operating Temperature
Industrial grade
-40°C to 85°C
Storage Temperature
-65°C to 150°C
Applied Input Voltage
-0.5V to VCC+0.5V
Applied Output Voltage
-0.5V to VCC+0.5V
VCC to Ground Potential
-0.5V to +2.5V
NOTICE:
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. This is stress rating only and functional operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended period may affect reliability.
2. Specifications contained within the following tables are subject to change.
3. During voltage transitions, all pins may overshoot to VCC+1.0V or -1.0V for period up to 20ns.
Figure 17. Maximum Positive Overshoot Waveform
Figure 16. Maximum Negative Overshoot Waveform
20ns
0V
VCC+1.0V
-1.0V
2.0V
20ns
11-2. Capacitance
TA = 25°C, f = 1.0 MHz
Symbol Parameter
CIN
COUT
P/N: PM1472
Min.
Typ.
Max.
Unit
Input Capacitance
10
pF
VIN = 0V
Output Capacitance
25
pF
VOUT = 0V
50
Conditions
Rev. 2.1, September 29, 2016
MX25U1635E
Figure 18. Input Test Waveforms and Measurement Level
Input timing reference level
0.8VCC
Output timing reference level
0.7VCC
AC
Measurement
Level
0.3VCC
0.2VCC
0.5VCC
Note: Input pulse rise and fall time are
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