MX25U51245GZ4I54

MX25U51245G 54 MX25U51245G 54 1.8V, 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO® (SERIAL MULTI I/O) FLASH MEMORY Key Features • 4-Byte Address Mode permanent • Quad I/O mode is permanently enabled • Default 10 Dummy Cycle • Support DTR (Double Transfer Rate) Mode • 8/16/32/64 byte Wrap-Around Read Mode Macronix Proprietary MX25U51245G 54 Contents 1. FEATURES............................................................................................................................................................... 5 2. GENERAL DESCRIPTION...................................................................................................................................... 6 Table 1. Read performance Comparison.....................................................................................................6 3. PIN CONFIGURATIONS .......................................................................................................................................... 7 Table 2. PIN DESCRIPTION........................................................................................................................7 4. BLOCK DIAGRAM.................................................................................................................................................... 8 5. MEMORY ORGANIZATION...................................................................................................................................... 9 6. DATA PROTECTION............................................................................................................................................... 10 6-1. Block lock protection..................................................................................................................................11 Table 3. Protected Area Sizes.................................................................................................................... 11 6-2. Additional 8K-bit secured OTP ................................................................................................................. 12 Table 4. 8K-bit Secured OTP Definition.....................................................................................................12 7. DEVICE OPERATION............................................................................................................................................. 13 7-1. 256Mb Address Protocol........................................................................................................................... 16 7-2. Quad Peripheral Interface (QPI) Read Mode........................................................................................... 16 8. COMMAND SET..................................................................................................................................................... 17 Table 5. Read/Write Array Commands.......................................................................................................17 Table 6. Register/Setting Commands.........................................................................................................18 Table 7. ID/Security Commands.................................................................................................................19 Table 8. Reset Commands.........................................................................................................................20 9. REGISTER DESCRIPTION..................................................................................................................................... 21 9-1. 9-2. 9-3. Status Register......................................................................................................................................... 21 Configuration Register.............................................................................................................................. 22 Security Register...................................................................................................................................... 24 Table 9. Security Register Definition..........................................................................................................24 10. COMMAND DESCRIPTION.................................................................................................................................. 25 10-1. 10-2. 10-3. 10-4. 10-5. 10-6. Write Enable (WREN)............................................................................................................................... 25 Write Disable (WRDI)................................................................................................................................ 26 Read Identification (RDID)........................................................................................................................ 27 Release from Deep Power-down (RDP), Read Electronic Signature (RES)............................................ 28 Read Electronic Manufacturer ID & Device ID (REMS)............................................................................ 30 QPI ID Read (QPIID)................................................................................................................................ 31 Table 10. ID Definitions .............................................................................................................................31 10-7. Read Status Register (RDSR).................................................................................................................. 32 10-8. Read Configuration Register (RDCR)....................................................................................................... 33 10-9. Write Status Register (WRSR).................................................................................................................. 36 Table 11. Protection Modes........................................................................................................................37 10-10. Read Data Bytes (READ)......................................................................................................................... 39 10-11. Read Data Bytes at Higher Speed (FAST_READ)................................................................................... 40 10-12. Dual Output Read Mode (DREAD)........................................................................................................... 41 P/N: PM2606 Macronix Proprietary 2 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-13. 2 x I/O Read Mode (2READ).................................................................................................................... 42 10-14. Quad Read Mode (QREAD)..................................................................................................................... 43 10-15. 4 x I/O Read Mode (4READ).................................................................................................................... 44 10-16. 4 x I/O Double Transfer Rate Read Mode (4DTRD)................................................................................. 46 10-17. Preamble Bit ............................................................................................................................................ 48 10-18. Performance Enhance Mode - XIP (execute-in-place)............................................................................. 52 10-19. Burst Read................................................................................................................................................ 57 10-20. Fast Boot.................................................................................................................................................. 58 10-21. Sector Erase (SE)..................................................................................................................................... 61 10-22. Block Erase (BE32K)................................................................................................................................ 62 10-23. Block Erase (BE)...................................................................................................................................... 63 10-24. Chip Erase (CE)........................................................................................................................................ 64 10-25. Page Program (PP).................................................................................................................................. 65 10-26. 4 x I/O Page Program (4PP)..................................................................................................................... 67 10-27. Deep Power-down (DP)............................................................................................................................ 68 10-28. Enter Secured OTP (ENSO)..................................................................................................................... 69 10-29. Exit Secured OTP (EXSO)........................................................................................................................ 69 10-30. Read Security Register (RDSCUR).......................................................................................................... 69 10-31. Write Security Register (WRSCUR).......................................................................................................... 69 10-32. Write Protection Selection (WPSEL)......................................................................................................... 70 10-33. Advanced Sector Protection..................................................................................................................... 72 10-34. Program Suspend and Erase Suspend.................................................................................................... 80 Table 12. Acceptable Commands During Suspend...................................................................................81 10-35. Program Resume and Erase Resume...................................................................................................... 82 10-36. No Operation (NOP)................................................................................................................................. 83 10-37. Software Reset (Reset-Enable (RSTEN) and Reset (RST)).................................................................... 83 11. Serial Flash Discoverable Parameter (SFDP)................................................................................................... 85 11-1. Read SFDP Mode (RDSFDP)................................................................................................................... 85 12. RESET.................................................................................................................................................................. 86 Table 13. Reset Timing-(Power On)...........................................................................................................86 Table 14. Reset Timing-(Other Operation).................................................................................................86 13. POWER-ON STATE.............................................................................................................................................. 87 14. ELECTRICAL SPECIFICATIONS......................................................................................................................... 88 Table 15. ABSOLUTE MAXIMUM RATINGS.............................................................................................88 Table 16. CAPACITANCE TA = 25°C, f = 1.0 MHz.....................................................................................88 Table 17. DC CHARACTERISTICS...........................................................................................................90 Table 18. AC CHARACTERISTICS............................................................................................................91 15. OPERATING CONDITIONS.................................................................................................................................. 93 Table 19. Power-Up/Down Voltage and Timing .........................................................................................95 15-1. INITIAL DELIVERY STATE....................................................................................................................... 95 P/N: PM2606 Macronix Proprietary 3 Rev. 1.2, July 17, 2020 MX25U51245G 54 16. ERASE AND PROGRAMMING PERFORMANCE............................................................................................... 96 17. DATA RETENTION............................................................................................................................................... 96 18. LATCH-UP CHARACTERISTICS......................................................................................................................... 96 19. ORDERING INFORMATION................................................................................................................................. 97 20. PART NAME DESCRIPTION................................................................................................................................ 98 21. PACKAGE INFORMATION................................................................................................................................... 99 22. REVISION HISTORY .......................................................................................................................................... 102 P/N: PM2606 Macronix Proprietary 4 Rev. 1.2, July 17, 2020 MX25U51245G 54 1.8V 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY 1. FEATURES GENERAL • Supports Serial Peripheral Interface -- Mode 0 and Mode 3 • Single Power Supply Operation - 1.65 to 2.0 volt for read, erase, and program operations • 512Mb: 536,870,912 x 1 bit structure or 268,435,456 x 2 bits (two I/O mode) structure or 134,217,728 x 4 bits (four I/O mode) structure • Protocol Support - Single I/O, Dual I/O and Quad I/O • Latch-up protected to 100mA from -1V to Vcc +1V • Fast read for SPI mode - Support fast clock frequency up to 166MHz - Support Fast Read, 2READ, DREAD, 4READ, QREAD instructions - Support DTR (Double Transfer Rate) Mode - Configurable dummy cycle number for fast read operation • Support Performance Enhance Mode - XIP (execute-in-place) • Permanently fixed QE bit (The Quad Enable bit); QE=1 and 4 I/O mode is always enabled. • Quad Peripheral Interface (QPI) available • Equal Sectors with 4K byte each, or Equal Blocks with 32K byte each or Equal Blocks with 64K byte each - Any Block can be erased individually • Programming : - 256byte page buffer - Quad Input/Output page program(4PP) to enhance program performance • Typical 100,000 erase/program cycles P/N: PM2606 • 20 years data retention SOFTWARE FEATURES • Input Data Format - 1-byte Command code • Advanced Security Features - Block lock protection The BP0-BP3 and T/B status bits define the size of the area to be protected against program and erase instructions - Advanced sector protection function • Additional 8K bit security OTP - Features unique identifier - Factory locked identifiable, and customer lockable • Command Reset • Program/Erase Suspend and Resume operation • Electronic Identification - JEDEC 1-byte manufacturer ID and 2-byte device ID - RES command for 1-byte Device ID - REMS command for 1-byte manufacturer ID and 1-byte device ID • Support Serial Flash Discoverable Parameters (SFDP) mode HARDWARE FEATURES • SCLK Input - Serial clock input • SI/SIO0 - Serial Data Input or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode • SO/SIO1 - Serial Data Output or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode • SIO2 - Serial input & Output for 4 x I/O read mode • SIO3 - Serial input & Output for 4 x I/O read mode • RESET# - Hardware Reset pin • PACKAGE - 8-land WSON (8x6mm 3.4 x 4.3EP) - 16-pin SOP (300mil) - 24-Ball BGA (5x5 ball array) - All devices are RoHS Compliant and Halogenfree Macronix Proprietary 5 Rev. 1.2, July 17, 2020 MX25U51245G 54 2. GENERAL DESCRIPTION MX25U51245G is 512Mb bits Serial NOR Flash memory with 4-bytes address interface, which is configured as 67,108,864 x 8 internally. When it is in two or four I/O mode, the structure becomes 268,435,456 bits x 2 or 134,217,728 bits x 4. MX25U51245G feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus while it is in single I/O mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input. When it is in two I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits input and data output. When it is in four I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits input and data output. The MX25U51245G MXSMIO (Serial Multi I/O) provides sequential read operation on whole chip. After program/erase command is issued, auto program/erase algorithms which program/erase and verify the specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256 bytes) basis, or word basis for erase command is executed on sector (4K-byte), block (32K-byte), or block (64K-byte), or whole chip basis. To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read command can be issued to detect completion status of a program or erase operation via WIP bit. Advanced security features enhance the protection and security functions, please see security features section for more details. When the device is not in operation and CS# is high, it is put in standby mode. The MX25U51245G utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after 100,000 program and erase cycles. Table 1. Read performance Comparison Numbers of Dummy Cycles Fast Read (MHz) Dual Output Fast Read (MHz) Quad Output Fast Read (MHz) Dual IO Fast Read (MHz) Quad IO Fast Read (MHz) Quad I/O DT Read 4 - - - 84 70 42 6 133 133 104 104 84 52 8 133 133 133 133 104 66 10 166 * 166 * 166 * 166 * 133 * 102 * (MHz) Note: * mean default status P/N: PM2606 Macronix Proprietary 6 Rev. 1.2, July 17, 2020 MX25U51245G 54 3. PIN CONFIGURATIONS Table 2. PIN DESCRIPTION 8-WSON (8x6mm 3.4 x 4.3EP) 1 2 3 4 CS# SO/SIO1 SIO2 GND 8 7 6 5 SYMBOL CS# SCLK RESET# VCC SIO3 SCLK SI/SIO0 SI/SIO0 SO/SIO1 SIO2 16-PIN SOP (300mil) SIO3 VCC RESET# NC DNU DNU CS# SO/SIO1 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 SIO3 SCLK SI/SIO0 NC NC DNU DNU GND SIO2 VCC GND NC DNU Note: 1. The pin of RESET# will remain internal pull up function while this pin is not physically connected in system configuration. H owever, the internal pull up function will be disabled if the system has physical connection to RESET# pin. 24-Ball BGA (5x5 ball array) 1 2 3 4 NC NC RESET# DNU NC SCLK GND VCC NC NC CS# NC SIO2 NC NC SO/SIO1 SI/SIO0 SIO3 NC NC NC NC NC NC DESCRIPTION Chip Select Clock Input Hardware Reset Pin Active low Serial Data Input (for 1 x I/O)/ Serial Data Input & Output (for 2xI/O or 4xI/ O read mode) Serial Data Output (for 1 x I/O)/ Serial Data Input & Output (for 2xI/O or 4xI/ O read mode) Serial Data Input & Output (for 4xI/O read mode) Serial Data Input & Output (for 4xI/O read mode) Power Supply Ground No Connection Do Not Use (It may connect to internal signal inside) 5 A B C D E P/N: PM2606 Macronix Proprietary 7 Rev. 1.2, July 17, 2020 MX25U51245G 54 4. BLOCK DIAGRAM X-Decoder Address Generator SI/SIO0 SO/SIO1 SIO2 * SIO3 * WP# * HOLD# * RESET# * CS# Y-Decoder Data Register Sense Amplifier SRAM Buffer Mode Logic SCLK Memory Array State Machine HV Generator Clock Generator Output Buffer * Depends on part number options. P/N: PM2606 Macronix Proprietary 8 Rev. 1.2, July 17, 2020 MX25U51245G 54 5. MEMORY ORGANIZATION Sector 1021 2042 … … … … 3FF0FFFh 3FEF000h 3FEFFFFh 16360 3FE8000h 3FE8FFFh 16359 3FE7000h 3FE7FFFh … … 3FF0000h 16367 … 16368 … individual 16 sectors lock/unlock unit:4K-byte 16352 3FE0000h 3FE0FFFh 16351 3FDF000h 3FDFFFFh … 2043 3FF7FFFh 16344 3FD8000h 3FD8FFFh 16343 3FD7000h 3FD7FFFh … individual block lock/unlock unit:64K-byte 3FF7000h … 2044 16375 … 1022 3FF8FFFh … 2045 3FF8000h … 2046 16376 … 1023 3FFFFFFh … 2047 Address Range 3FFF000h … 16383 … Block(64K-byte) Block(32K-byte) 16336 3FD0000h 3FD0FFFh 47 002F000h 002FFFFh 1 P/N: PM2606 … … 0020FFFh 001F000h 001FFFFh … … 0020000h 31 0018000h 0018FFFh 23 0017000h 0017FFFh … 24 16 0010000h 0010FFFh 15 000F000h 000FFFFh 0008FFFh 0007000h 0007FFFh … 0008000h 7 … 8 … 0 0 … … … 32 … 2 0027FFFh … 1 0028FFFh 027000h … 3 0028000h 39 … 4 individual block lock/unlock unit:64K-byte 40 … 2 … 5 … individual block lock/unlock unit:64K-byte 0 0000000h 0000FFFh Macronix Proprietary 9 individual 16 sectors lock/unlock unit:4K-byte Rev. 1.2, July 17, 2020 MX25U51245G 54 6. DATA PROTECTION During power transition, there may be some false system level signals which result in inadvertent erasure or programming. The device is designed to protect itself from these accidental write cycles. The state machine will be reset as standby mode automatically during power up. In addition, the control register architecture of the device constrains that the memory contents can only be changed after specific command sequences have completed successfully. In the following, there are several features to protect the system from the accidental write cycles during VCC powerup and power-down or from system noise. • Valid command length checking: The command length will be checked whether it is at byte base and completed on byte boundary. • Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before other command to change data. • Deep Power Down Mode: By entering deep power down mode, the flash device also is under protected from writing all commands except Release from deep power down mode command (RDP) and Read Electronic Signature command (RES), Erase/Program suspend command, Erase/Program resume command and softreset command. • Advanced Security Features: there are some protection and security features which protect content from inadvertent write and hostile access. P/N: PM2606 Macronix Proprietary 10 Rev. 1.2, July 17, 2020 MX25U51245G 54 6-1. Block lock protection - The Software Protected Mode (SPM) use (BP3, BP2, BP1, BP0 and T/B) bits to allow part of memory to be protected as read only. The protected area definition is shown as "Table 3. Protected Area Sizes", the protected areas are more flexible which may protect various area by setting value of BP0-BP3 bits. Table 3. Protected Area Sizes Protected Area Sizes (T/B bit = 0) Status bit BP3 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 BP2 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 BP1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 BP0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 Protect Level 512Mb 0 (none) 1 (1 block, protected block 1023rd) 2 (2 blocks, protected block 1022nd~1023rd) 3 (4 blocks, protected block 1020th~1023rd) 4 (8 blocks, protected block 1016th~1023rd) 5 (16 blocks, protected block 1008th~1023rd) 6 (32 blocks, protected block 992nd~1023rd) 7 (64 blocks, protected block 960th~1023rd) 8 (128 blocks, protected block 896th~1023rd) 9 (256 blocks, protected block 768th~1023rd) 10 (512 blocks, protected block 512nd~1023rd) 11 (1024 blocks, protected all) 12 (1024 blocks, protected all) 13 (1024 blocks, protected all) 14 (1024 blocks, protected all) 15 (1024 blocks, protected all) Protected Area Sizes (T/B bit = 1) Status bit BP3 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 P/N: PM2606 BP2 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 BP1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 Protect Level BP0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 512Mb 0 (none) 1 (1 block, protected block 0th) 2 (2 blocks, protected block 0th~1st) 3 (4 blocks, protected block 0th~3rd) 4 (8 blocks, protected block 0th~7th) 5 (16 blocks, protected block 0th~15th) 6 (32 blocks, protected block 0th~31st) 7 (64 blocks, protected block 0th~63rd) 8 (128 blocks, protected block 0th~127th) 9 (256 blocks, protected block 0th~255th) 10 (512 blocks, protected block 0th~511th) 11 (1024 blocks, protected all) 12 (1024 blocks, protected all) 13 (1024 blocks, protected all) 14 (1024 blocks, protected all) 15 (1024 blocks, protected all) Macronix Proprietary 11 Rev. 1.2, July 17, 2020 MX25U51245G 54 6-2. Additional 8K-bit secured OTP The secured OTP for unique identifier: to provide 8K-bit one-time program area for setting device unique serial number. Which may be set by factory or system customer. - Security register bit 0 indicates whether the chip is locked by factory or not. - To program the 8K-bit secured OTP by entering secured OTP mode (with Enter Security OTP command), and going through normal program procedure, and then exiting secured OTP mode by writing Exit Security OTP command. - Customer may lock-down the customer lockable secured OTP by writing WRSCUR(write security register) command to set customer lock-down bit1 as "1". Please refer to "Table 9. Security Register Definition" for security register bit definition and "Table 4. 8K-bit Secured OTP Definition" for address range definition. - Note: Once lock-down by factory or customer, the corresponding range cannot be changed any more. While in secured OTP mode, array access is not allowed. Table 4. 8K-bit Secured OTP Definition Address range Size Lock-down xxx000~xxx1FF 4096-bit Determined by Customer xxx200~xxx3FF 4096-bit Determined by Factory P/N: PM2606 Macronix Proprietary 12 Rev. 1.2, July 17, 2020 MX25U51245G 54 7. DEVICE OPERATION 1. Before a command is issued, status register should be checked to ensure device is ready for the intended operation. 2. When incorrect command is inputted to this device, this device becomes standby mode and keeps the standby mode until next CS# falling edge. In standby mode, SO pin of this device should be High-Z. 3. When correct command is inputted to this device, this device becomes active mode and keeps the active mode until next CS# rising edge. 4. Input data is latched on the rising edge of Serial Clock (SCLK) and data shifts out on the falling edge of SCLK. The difference of Serial mode 0 and mode 3 is shown as "Serial Modes Supported". 5. For the following instructions: RDID, RDSR, RDSCUR, READ, FAST_READ, 2READ, DREAD, 4READ, QREAD, RDSFDP, RES, REMS, QPIID, RDDPB, RDSPB, RDLR, RDFBR, RDCR, the shifted-in instruction sequence is followed by a data-out sequence. After any bit of data being shifted out, the CS# can be high. For the following instructions: WREN, WRDI, WRSR, SE, BE32K, BE, CE, PP, 4PP, DP, ENSO, EXSO, WRSCUR, WPSEL, GBLK, GBULK, SUSPEND, RESUME, NOP, RSTEN, RST, EQIO, RSTQIO the CS# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed. 6. During the progress of Write Status Register, Program, Erase operation, to access the memory array is neglected and not affect the current operation of Write Status Register, Program, Erase. Figure 1. Serial Modes Supported CPOL CPHA shift in (Serial mode 0) 0 0 SCLK (Serial mode 3) 1 1 SCLK SI shift out MSB SO MSB Note: CPOL indicates clock polarity of Serial master, CPOL=1 for SCLK high while idle, CPOL=0 for SCLK low while not transmitting. CPHA indicates clock phase. The combination of CPOL bit and CPHA bit decides which Serial mode is supported. P/N: PM2606 Macronix Proprietary 13 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 2. Serial Input Timing (STR mode) tSHSL CS# tCHSL tSLCH tCHSH tSHCH SCLK tDVCH tCHCL tCHDX tCLCH LSB MSB SI SO High-Z Figure 3. Serial Input Timing (DTR mode) tSHSL CS# tCHSL tSLCH tSHCH SCLK tDVCH tCHDX SIO[3:0] P/N: PM2606 tCHCL tCLDX tDVCL MSB tCLCH LSB Macronix Proprietary 14 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 4. Output Timing (STR mode) CS# tCH SCLK tCLQV tCL tCLQV tCLQX tSHQZ tCLQX LSB SO SI ADDR.LSB IN Figure 5. Output Timing (DTR mode) CS# tCH SCLK tCLQV tCLQX tCL tCLQV tCLQX LSB SO SI tSHQZ ADDR.LSB IN P/N: PM2606 Macronix Proprietary 15 Rev. 1.2, July 17, 2020 MX25U51245G 54 7-1. 256Mb Address Protocol The original 24 bit address protocol of Serial NOR Flash can only access density size below 128Mb. For the memory device of 256Mb and above, the 32bit address is requested for access higher memory size. MX25U51245G device provide whole new 4-Byte address protocol, for backward compatible to the legacy commands. All the command request for 4-Byte (32 bit) address cycle in this device. 7-2. Quad Peripheral Interface (QPI) Read Mode QPI protocol enables user to take full advantage of Quad I/O Serial NOR Flash by providing the Quad I/O interface in command cycles, address cycles and as well as data output cycles. Enable QPI mode By issuing command EQIO(35h), the QPI mode is enabled. After QPI mode is enabled, the device enters quad mode (4-4-4) without QE bit status changed. Figure 6. Enable QPI Sequence CS# MODE 3 SCLK 0 1 2 3 4 5 6 7 MODE 0 SIO0 35h SIO[3:1] Reset QPI (RSTQIO) To reset the QPI mode, the RSTQIO (F5H) command is required. After the RSTQIO command is issued, the device returns from QPI mode (4 I/O interface in command cycles) to SPI mode (1 I/O interface in command cycles). Note: For EQIO and RSTQIO commands, CS# high width has to follow "write spec" tSHSL for next instruction. Figure 7. Reset QPI Mode CS# SCLK SIO[3:0] P/N: PM2606 F5h Macronix Proprietary 16 Rev. 1.2, July 17, 2020 MX25U51245G 54 8. COMMAND SET Table 5. Read/Write Array Commands Command (byte) READ FAST READ (normal read) (fast read data) 2READ (2 x I/O read command) DREAD (1I 2O read) 4READ (4 I/O read) QREAD (1I 4O read) 4DTRD (Quad I/O DT Read) Mode Address Bytes 1st byte SPI 4 03 (hex) SPI 4 0B (hex) SPI 4 BB (hex) SPI 4 3B (hex) SPI/QPI 4 EB (hex) SPI 4 6B (hex) SPI/QPI 4 ED (hex) 2nd byte ADD1 ADD1 ADD1 ADD1 ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 ADD2 ADD2 ADD2 ADD2 4th byte ADD3 ADD3 ADD3 ADD3 ADD3 ADD3 ADD3 5th byte ADD4 ADD4 ADD4 ADD4 ADD4 ADD4 ADD4 Dummy* Dummy* Dummy* Dummy* Dummy* Dummy* 6th byte Data Cycles Action n bytes read out until CS# goes high Command (byte) PP (page program) Mode SPI/QPI n bytes read n bytes read n bytes read n bytes read n bytes read n bytes read out until CS# out by 2 x I/O out by Dual out by 4 x I/O out by Quad out (Double goes high until CS# goes output until until CS# goes output until Transfer Rate) high CS# goes high high CS# goes high by 4xI/O until CS# goes high 4PP (quad page program) SPI SE (sector erase) SPI/QPI BE 32K (block erase 32KB) SPI/QPI BE (block erase 64KB) SPI/QPI CE (chip erase) SPI/QPI Address Bytes 4 4 4 4 4 0 1st byte 02 (hex) 38 (hex) 20 (hex) 52 (hex) D8 (hex) 60 or C7 (hex) 2nd byte ADD1 ADD1 ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 ADD2 ADD2 4th byte ADD3 ADD3 ADD3 ADD3 ADD3 5th byte ADD4 ADD4 ADD4 ADD4 ADD4 Data Cycles Action 1-256 1-256 to program the quad input to to erase the to erase the selected page program the selected sector selected 32K selected page block to erase the to erase whole selected block chip * Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in configuration register. P/N: PM2606 Macronix Proprietary 17 Rev. 1.2, July 17, 2020 MX25U51245G 54 Table 6. Register/Setting Commands Mode SPI/QPI SPI/QPI SPI/QPI RDCR (read configuration register) SPI/QPI 1st byte 06 (hex) 04 (hex) 05 (hex) 15 (hex) Command (byte) WREN WRDI (write enable) (write disable) RDSR (read status register) WRSR (write status/ configuration register) SPI/QPI 01 (hex) 2nd byte Values 3rd byte Values WPSEL (Write Protect Selection) EQIO (Enable QPI) SPI SPI 68 (hex) 35 (hex) 4th byte 5th byte Data Cycles Action sets the (WEL) resets the to read out the to read out the write enable (WEL) write values of the values of the latch bit enable latch bit status register configuration register Command (byte) RSTQIO (Reset QPI) Mode 1st byte QPI F5 (hex) PGM/ERS PGM/ERS Suspend Resume (Suspends (Resumes Program/ Program/ Erase) Erase) SPI/QPI SPI/QPI B0 or 75 (hex) 30 or 7A (hex) 1-2 to write new to enter and values of the enable individal block protect status/ mode configuration register DP (Deep power down) RDP (Release from deep power down) SBL (Set Burst Length) SPI/QPI B9 (hex) SPI/QPI AB (hex) SPI/QPI C0 (hex) enters deep power down mode release from deep power down mode to set Burst length Entering the QPI mode 2nd byte 3rd byte 4th byte 5th byte Data Cycles Action Command (byte) Mode 1st byte Exiting the QPI mode RDFBR WRFBR ESFBR (read fast boot (write fast boot (erase fast register) register) boot register) SPI SPI SPI 16(hex) 17(hex) 18(hex) 2nd byte 3rd byte 4th byte 5th byte Data Cycles 1-4 4 Action P/N: PM2606 Macronix Proprietary 18 Rev. 1.2, July 17, 2020 MX25U51245G 54 Table 7. ID/Security Commands REMS RDID RES (read electronic QPIID (read identific- (read electronic manufacturer & (QPI ID Read) ation) ID) device ID) Mode SPI SPI/QPI SPI QPI Address Bytes 0 0 0 0 1st byte 9F (hex) AB (hex) 90 (hex) AF (hex) Command (byte) 2nd byte x 3rd byte x 4th byte x RDSCUR WRSCUR (read security (write security register) register) Mode SPI/QPI SPI/QPI Address Bytes 0 0 1st byte 2B (hex) 2F (hex) EXSO (exit secured OTP) SPI/QPI 3 5A (hex) SPI/QPI 0 B1 (hex) SPI/QPI 0 C1 (hex) x ADD2 ADD1 ADD3 outputs JEDEC to read out output the ID: 1-byte 1-byte Device Manufacturer Manufacturer ID ID & Device ID ID & 2-byte Device ID Command (byte) ENSO (enter secured OTP) ADD1 5th byte Action RDSFDP ID in QPI interface Dummy(8)(Note 4) Read SFDP to enter the mode secured OTP mode to exit the secured OTP mode GBLK (gang block lock) SPI 0 GBULK (gang block unlock) SPI 0 WRLR (write Lock register) SPI 0 RDLR (read Lock register) SPI 0 WRSPB (SPB bit program) SPI 4 7E (hex) 98 (hex) 2C (hex) 2D (hex) E3 (hex) 2nd byte ADD1 3rd byte ADD2 4th byte ADD3 5th byte ADD4 Data Cycles Action 2 to read value to set the lockof security down bit as register "1" (once lockdown, cannot be updated) whole chip write protect whole chip unprotect Mode Address Bytes ESSPB (all SPB bit erase) SPI 0 RDSPB (read SPB status) SPI 4 WRDPB (write DPB register) SPI 4 RDDPB (read DPB register) SPI 4 1st byte E4 (hex) E2 (hex) E1 (hex) E0 (hex) Command (byte) 2 RDPASS WRPASS (read password (write password register) register) SPI SPI 4 4 27 (hex) 28 (hex) PASSULK (password unlock) SPI 4 29 (hex) 2nd byte ADD1 ADD1 ADD1 ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 ADD2 ADD2 ADD2 4th byte ADD3 ADD3 ADD3 ADD3 ADD3 ADD3 5th byte ADD4 ADD4 ADD4 ADD4 ADD4 ADD4 8 8 Dummy(8)(Note 4) 6th byte Data Cycles 1 1 1 8 Action P/N: PM2606 Macronix Proprietary 19 Rev. 1.2, July 17, 2020 MX25U51245G 54 Table 8. Reset Commands Mode SPI/QPI SPI/QPI RST (Reset Memory) SPI/QPI 1st byte 00 (hex) 66 (hex) 99 (hex) Command (byte) NOP RSTEN (No Operation) (Reset Enable) 2nd byte 3rd byte 4th byte 5th byte Action Note 1: ADD=00H will output the manufacturer ID first and ADD=01H will output device ID first. Note 2: It is not recommended to adopt any other code not in the command definition table, which will potentially enter the hidden mode. Note 3: The RSTEN command must be executed before executing the RST command. If any other command is issued in-between RSTEN and RST, the RST command will be ignored. Note 4: The number in parentheses after “ADD” or “Data” or “Dummy” stands for how many clock cycles it has. For example, "Data(8)" represents there are 8 clock cycles for the data in. P/N: PM2606 Macronix Proprietary 20 Rev. 1.2, July 17, 2020 MX25U51245G 54 9. REGISTER DESCRIPTION 9-1. Status Register The definition of the status register bits is as below: WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status register progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/write status register cycle. WEL bit. The Write Enable Latch (WEL) bit is a volatile bit that is set to “1” by the WREN instruction. WEL needs to be set to “1” before the device can accept program and erase instructions, otherwise the program and erase instructions are ignored. WEL automatically clears to “0” when a program or erase operation completes. To ensure that both WIP and WEL are “0” and the device is ready for the next program or erase operation, it is recommended that WIP be confirmed to be “0” before checking that WEL is also “0”. If a program or erase instruction is applied to a protected memory area, the instruction will be ignored and WEL will clear to “0”. BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits, non-volatile bits, indicate the protected area (as defined in Table 3) of the device to against the program/erase instruction without hardware protection mode being set. To write the Block Protect (BP3, BP2, BP1, BP0) bits requires the Write Status Register (WRSR) instruction to be executed. Those bits define the protected area of the memory to against Page Program (PP), Sector Erase (SE), Block Erase 32KB (BE32K), Block Erase (BE) and Chip Erase (CE) instructions (only if Block Protect bits (BP3:BP0) set to 0, the CE instruction can be executed). The BP3, BP2, BP1, BP0 bits are "0" as default. Which is un-protected. QE bit. The Quad Enable (QE) bit, a non-volatile bit which is permanently set to "1". The flash always performs Quad I/O mode. Status Register bit7 bit6 bit5 BP3 (level of protected block) bit4 BP2 (level of protected block) bit3 BP1 (level of protected block) bit2 BP0 (level of protected block) Reserved QE (Quad Enable) Reserved 1=Quad Enabled (note 1) (note 1) (note 1) (note 1) Reserved Non-volatile bit Non-volatile bit Non-volatile bit Non-volatile bit Non-volatile bit bit1 bit0 WEL WIP (write enable (write in latch) progress bit) 1=write 1=write enable operation 0=not write 0=not in write enable operation volatile bit volatile bit Note 1: see the "Table 3. Protected Area Sizes". P/N: PM2606 Macronix Proprietary 21 Rev. 1.2, July 17, 2020 MX25U51245G 54 9-2. Configuration Register The Configuration Register is able to change the default status of Flash memory. Flash memory will be configured after the CR bit is set. ODS bit The output driver strength (ODS2, ODS1, ODS0) bits are volatile bits, which indicate the output driver level (as defined in Output Driver Strength Table) of the device. To write the ODS bits requires the Write Status Register (WRSR) instruction to be executed. TB bit The Top/Bottom (TB) bit is a non-volatile OTP bit. The Top/Bottom (TB) bit is used to configure the Block Protect area by BP bit (BP3, BP2, BP1, BP0), starting from TOP or Bottom of the memory array. The TB bit is defaulted as “0”, which means Top area protect. When it is set as “1”, the protect area will change to Bottom area of the memory device. To write the TB bits requires the Write Status Register (WRSR) instruction to be executed. PBE bit The Preamble Bit Enable (PBE) bit is a volatile bit. It is used to enable or disable the preamble bit data pattern output on dummy cycles. The PBE bit is defaulted as “0”, which means preamble bit is disabled. When it is set as “1”, the preamble bit will be enabled, and inputted into dummy cycles. To write the PBE bits requires the Write Status Register (WRSR) instruction to be executed. Configuration Register bit7 DC1 (Dummy cycle 1) bit6 DC0 (Dummy cycle 0) bit5 (note 2) (note 2) x volatile bit volatile bit x Reserved bit4 bit3 bit2 bit1 bit0 PBE TB ODS 2 ODS 1 ODS 0 (Preamble bit (top/bottom (output driver (output driver (output driver Enable) selected) strength) strength) strength) 0=Top area 0=Disable protect 1=Bottom (note 1) (note 1) (note 1) 1=Enable area protect (Default=0) volatile bit OTP volatile bit volatile bit volatile bit Note 1: see "Output Driver Strength Table" Note 2: see "Dummy Cycle and Frequency Table (MHz)" P/N: PM2606 Macronix Proprietary 22 Rev. 1.2, July 17, 2020 MX25U51245G 54 Output Driver Strength Table ODS2 ODS1 ODS0 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 24-Ball BGA Resistance (Ohm) 146 Ohms 76 Ohms 52 Ohms 41 Ohms 34 Ohms 30 Ohms 26 Ohms 24 Ohms (Default) 8-WSON, 16-SOP Resistance (Ohm) 163 Ohms 92 Ohms 70 Ohms 60 Ohms 54 Ohms 50 Ohms 48 Ohms 46 Ohms (Default) Note Impedance at VCC/2 (Typical) Dummy Cycle and Frequency Table (MHz) DC[1:0] 11 10 01 00 (default) DC[1:0] 11 10 01 00 (default) DC[1:0] 11 10 01 00 (default) P/N: PM2606 Numbers of Dummy clock cycles 8 6 8 10 Numbers of Dummy clock cycles 4 6 8 10 Numbers of Dummy clock cycles 6 4 8 10 Fast Read Dual Output Fast Read Quad Output Fast Read 133 133 133 166 133 133 133 166 133 104 133 166 Dual IO Fast Read 84 104 133 166 Quad IO Fast Read Quad I/O DTR Read 84 70 104 133 52 42 66 102 Macronix Proprietary 23 Rev. 1.2, July 17, 2020 MX25U51245G 54 9-3. Security Register The definition of the Security Register bits is as below: Write Protection Selection bit. Please reference to "Write Protection Selection bit" Erase Fail bit. The Erase Fail bit shows the status of last Erase operation. The bit will be set to "1" if the erase operation failed or the erase region was protected. It will be automatically cleared to "0" if the next erase operation succeeds. Please note that it will not interrupt or stop any operation in the flash memory. Program Fail bit. The Program Fail bit shows the status of the last Program operation. The bit will be set to "1" if the program operation failed or the program region was protected. It will be automatically cleared to "0" if the next program operation succeeds. Please note that it will not interrupt or stop any operation in the flash memory. Erase Suspend bit. Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use ESB to identify the state of flash memory. After the flash memory is suspended by Erase Suspend command, ESB is set to "1". ESB is cleared to "0" after erase operation resumes. Program Suspend bit. Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may use PSB to identify the state of flash memory. After the flash memory is suspended by Program Suspend command, PSB is set to "1". PSB is cleared to "0" after program operation resumes. Secured OTP Indicator bit. The Secured OTP indicator bit shows the secured OTP area is locked by factory or not. When it is "0", it indicates non-factory lock; "1" indicates factory-lock. Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set to "1" for customer lock-down purpose. However, once the bit is set to "1" (lock-down), the LDSO bit and the Secured OTP area cannot be updated any more. While it is in secured OTP mode, main array access is not allowed. Table 9. Security Register Definition bit7 bit6 bit5 bit4 WPSEL E_FAIL P_FAIL Reserved 0=normal WP mode 1=individual mode (default=0) 0=normal Erase succeed 1=indicate Erase failed (default=0) 0=normal Program succeed 1=indicate Program failed (default=0) - 0=Erase is not suspended 1= Erase suspended (default=0) Non-volatile bit (OTP) Volatile bit Volatile bit Volatile bit Volatile bit P/N: PM2606 bit3 bit2 ESB PSB (Erase (Program Suspend bit) Suspend bit) Macronix Proprietary 24 bit1 bit0 LDSO Secured OTP (indicate if indicator bit lock-down) 0 = not lock0=Program down 0 = nonis not 1 = lock-down factory suspended (cannot lock 1= Program program/ 1 = factory suspended erase lock (default=0) OTP) Non-volatile Non-volatile Volatile bit bit bit (OTP) (OTP) Rev. 1.2, July 17, 2020 MX25U51245G 54 10. COMMAND DESCRIPTION 10-1. Write Enable (WREN) The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP, 4PP, SE, BE32K, BE, CE, and WRSR, which are intended to change the device content WEL bit should be set every time after the WREN instruction setting the WEL bit. The sequence of issuing WREN instruction is: CS# goes low→sending WREN instruction code→ CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in SPI mode. Figure 8. Write Enable (WREN) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 SCLK Mode 0 Command SI 06h High-Z SO Figure 9. Write Enable (WREN) Sequence (QPI Mode) CS# 0 Mode 3 1 SCLK Mode 0 Command 06h SIO[3:0] P/N: PM2606 Macronix Proprietary 25 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-2. Write Disable (WRDI) The Write Disable (WRDI) instruction is to reset Write Enable Latch (WEL) bit. The sequence of issuing WRDI instruction is: CS# goes low→sending WRDI instruction code→CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in SPI mode. The WEL bit is reset by following situations: - Power-up - Reset# pin driven low - WRDI command completion - WRSR command completion - PP command completion - 4PP command completion - SE command completion - BE32K command completion - BE command completion - CE command completion - PGM/ERS Suspend command completion - Softreset command completion - WRSCUR command completion - WPSEL command completion - GBLK command completion - GBULK command completion - WRLR command completion - WRSPB command completion - ESSPB command completion - WRDPB command completion - WRFBR command completion - ESFBR command completion Figure 10. Write Disable (WRDI) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 SCLK Mode 0 SI SO P/N: PM2606 Command 04h High-Z Macronix Proprietary 26 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 11. Write Disable (WRDI) Sequence (QPI Mode) CS# 0 Mode 3 1 SCLK Mode 0 Command 04h SIO[3:0] 10-3. Read Identification (RDID) The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The Macronix Manufacturer ID and Device ID are listed as "Table 10. ID Definitions". The sequence of issuing RDID instruction is: CS# goes low→ sending RDID instruction code→24-bits ID data out on SO→ to end RDID operation can drive CS# to high at any time during data out. While Program/Erase operation is in progress, it will not decode the RDID instruction, therefore there's no effect on the cycle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby stage. Figure 12. Read Identification (RDID) Sequence (SPI mode only) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 13 14 15 16 17 18 28 29 30 31 SCLK Mode 0 Command SI 9Fh Manufacturer Identification SO High-Z 7 6 5 2 1 MSB P/N: PM2606 Device Identification 0 15 14 13 3 2 1 0 MSB Macronix Proprietary 27 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-4. Release from Deep Power-down (RDP), Read Electronic Signature (RES) The Release from Deep Power-down (RDP) instruction is completed by driving Chip Select (CS#) High. When Chip Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously in the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES1, and Chip Select (CS#) must remain High for at least tRES1(max), as specified in "Table 18. AC CHARACTERISTICS". Once in the Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. The RDP instruction is only for releasing from Deep Power Down Mode. Reset# pin goes low will release the Flash from deep power down mode. RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as Table 10 ID Definitions. This is not the same as RDID instruction. It is not recommended to use for new design. For new design, please use RDID instruction. Even in Deep power-down mode, the RDP and RES are also allowed to be executed, only except the device is in progress of program/erase/write cycle; there's no effect on the current program/erase/write cycle in progress. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs repeatedly if continuously send the additional clock cycles on SCLK while CS# is at low. If the device was not previously in Deep Power-down mode, the device transition to standby mode is immediate. If the device was previously in Deep Power-down mode, there's a delay of tRES2 to transit to standby mode, and CS# must remain to high at least tRES2(max). Once in the standby mode, the device waits to be selected, so it can be receive, decode, and execute instruction. Figure 13. Read Electronic Signature (RES) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 SCLK Mode 0 Command SI ABh tRES2 3 Dummy Bytes 23 22 21 3 2 1 0 MSB SO Electronic Signature Out High-Z 7 6 5 4 3 2 1 0 MSB Deep Power-down Mode P/N: PM2606 Macronix Proprietary 28 Stand-by Mode Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 14. Read Electronic Signature (RES) Sequence (QPI Mode) CS# MODE 3 0 1 2 3 4 5 6 7 SCLK MODE 0 SIO[3:0] tRES2 3 Dummy Bytes Command X ABh X X X X X H0 L0 MSB LSB Data In Data Out Stand-by Mode Deep Power-down Mode Figure 15. Release from Deep Power-down (RDP) Sequence (SPI Mode) CS# 0 Mode 3 1 2 3 4 5 6 tRES1 7 SCLK Mode 0 Command SI ABh High-Z SO Deep Power-down Mode Stand-by Mode Figure 16. Release from Deep Power-down (RDP) Sequence (QPI Mode) CS# Mode 3 tRES1 0 1 SCLK Mode 0 Command SIO[3:0] ABh Deep Power-down Mode P/N: PM2606 Macronix Proprietary 29 Stand-by Mode Rev. 1.2, July 17, 2020 MX25U51245G 54 10-5. Read Electronic Manufacturer ID & Device ID (REMS) The REMS instruction returns both the JEDEC assigned manufacturer ID and the device ID. The Device ID values are listed in Table 10 of ID Definitions. The REMS instruction is initiated by driving the CS# pin low and sending the instruction code "90h" followed by two dummy bytes and one address byte (A7~A0). After which the manufacturer ID for Macronix (C2h) and the device ID are shifted out on the falling edge of SCLK with the most significant bit (MSB) first. If the address byte is 00h, the manufacturer ID will be output first, followed by the device ID. If the address byte is 01h, then the device ID will be output first, followed by the manufacturer ID. While CS# is low, the manufacturer and device IDs can be read continuously, alternating from one to the other. The instruction is completed by driving CS# high. Figure 17. Read Electronic Manufacturer & Device ID (REMS) Sequence (SPI Mode only) CS# SCLK Mode 3 0 1 2 Mode 0 3 4 5 6 7 8 Command SI 9 10 2 Dummy Bytes 15 14 13 90h 3 2 1 0 High-Z SO CS# 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK ADD (1) SI 7 6 5 4 3 2 1 0 Manufacturer ID SO 7 6 5 4 3 2 1 Device ID 0 7 6 5 4 3 2 MSB MSB 1 0 7 MSB Notes: (1) ADD=00H will output the manufacturer's ID first and ADD=01H will output device ID first. P/N: PM2606 Macronix Proprietary 30 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-6. QPI ID Read (QPIID) User can execute this QPIID Read instruction to identify the Device ID and Manufacturer ID. The sequence of issue QPIID instruction is CS# goes low→sending QPI ID instruction→Data out on SO→CS# goes high. Most significant bit (MSB) first. After the command cycle, the device will immediately output data on the falling edge of SCLK. The manufacturer ID, memory type, and device ID data byte will be output continuously, until the CS# goes high. Table 10. ID Definitions Command Type RDID 9Fh RES ABh REMS 90h QPIID AFh P/N: PM2606 MX25U51245G Manufacturer ID C2 Manufacturer ID C2 Manufacturer ID C2 Memory type 95 Electronic ID 3A Device ID 3A Memory type 95 Macronix Proprietary 31 Memory density 3A Memory density 3A Rev. 1.2, July 17, 2020 MX25U51245G 54 10-7. Read Status Register (RDSR) The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even in program/erase/write status register condition). It is recommended to check the Write in Progress (WIP) bit before sending a new instruction when a program, erase, or write status register operation is in progress. The sequence of issuing RDSR instruction is: CS# goes low→ sending RDSR instruction code→ Status Register data out on SO. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. Figure 18. Read Status Register (RDSR) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK Mode 0 command 05h SI SO Status Register Out High-Z 7 6 5 4 3 2 1 Status Register Out 0 7 6 5 4 3 2 1 0 7 MSB MSB Figure 19. Read Status Register (RDSR) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 N SCLK Mode 0 SIO[3:0] 05h H0 L0 H0 L0 H0 L0 H0 L0 MSB LSB Status Byte Status Byte Status Byte P/N: PM2606 Macronix Proprietary 32 Status Byte Rev. 1.2, July 17, 2020 MX25U51245G 54 10-8. Read Configuration Register (RDCR) The RDCR instruction is for reading Configuration Register Bits. The Read Configuration Register can be read at any time (even in program/erase/write configuration register condition). It is recommended to check the Write in Progress (WIP) bit before sending a new instruction when a program, erase, or write configuration register operation is in progress. The sequence of issuing RDCR instruction is: CS# goes low→ sending RDCR instruction code→ Configuration Register data out on SO. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. Figure 20. Read Configuration Register (RDCR) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK Mode 0 command 15h SI SO Configuration register Out High-Z 7 6 5 4 3 2 1 0 Configuration register Out 7 6 5 4 3 2 1 0 7 MSB MSB Figure 21. Read Configuration Register (RDCR) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 N SCLK Mode 0 SIO[3:0] 15h H0 L0 H0 L0 H0 L0 H0 L0 MSB LSB Config. Byte Config. Byte Config. Byte P/N: PM2606 Macronix Proprietary 33 Config. Byte Rev. 1.2, July 17, 2020 MX25U51245G 54 For user to check if Program/Erase operation is finished or not, RDSR instruction flow are shown as follows: Figure 22. Program/Erase flow with read array data start WREN command RDSR command* WEL=1? No Yes Program/erase command Write program data/address (Write erase address) RDSR command WIP=0? No Yes RDSR command Read WEL=0, BP[3:0], and QE data Read array data (same address of PGM/ERS) No Verify OK? Yes Program/erase successfully Program/erase another block? No Program/erase fail Yes * Issue RDSR to check BP[3:0]. * If WPSEL = 1, issue RDSPB and RDDPB to check the block status. Program/erase completed P/N: PM2606 Macronix Proprietary 34 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 23. Program/Erase flow without read array data (read P_FAIL/E_FAIL flag) start WREN command RDSR command* WEL=1? No Yes Program/erase command Write program data/address (Write erase address) RDSR command WIP=0? No Yes RDSR command Read WEL=0, BP[3:0], and QE data RDSCUR command Yes P_FAIL/E_FAIL =1 ? No Program/erase fail Program/erase successfully Program/erase another block? No Yes * Issue RDSR to check BP[3:0]. * If WPSEL = 1, issue RDSPB and RDDPB to check the block status. Program/erase completed P/N: PM2606 Macronix Proprietary 35 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-9. Write Status Register (WRSR) The WRSR instruction is for changing the values of Status Register Bits and Configuration Register Bits. Before sending WRSR instruction, the Write Enable (WREN) instruction must be decoded and executed to set the Write Enable Latch (WEL) bit in advance. The WRSR instruction can change the value of Block Protect (BP3, BP2, BP1, BP0) bits to define the protected area of memory (as shown in Table 3). The WRSR instruction cannot be executed once the Hardware Protected Mode (HPM) is entered. The sequence of issuing WRSR instruction is: CS# goes low→ sending WRSR instruction code→ Status Register data on SI→CS# goes high. The CS# must go high exactly at the 8 bits or 16 bits data boundary; otherwise, the instruction will be rejected and not executed. The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be check out during the Write Status Register cycle is in progress. The WIP sets 1 during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the Write Enable Latch (WEL) bit is reset. Figure 24. Write Status Register (WRSR) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 SCLK Mode 0 SI SO command 01h Status Register In 7 6 4 5 Configuration Register In 2 3 0 15 14 13 12 11 10 9 1 8 MSB High-Z Note : The CS# must go high exactly at 8 bits or 16 bits data boundary to completed the write register command. Figure 25. Write Status Register (WRSR) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 Mode 3 SCLK Mode 0 Mode 0 SR in Command SIO[3:0] P/N: PM2606 01h H0 L0 CR in H1 Macronix Proprietary 36 L1 Rev. 1.2, July 17, 2020 MX25U51245G 54 Software Protected Mode (SPM): - The WREN instruction may set the WEL bit and can change the values of BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1, BP0 and T/B bit, is at software protected mode (SPM). Table 11. Protection Modes Mode Software protection mode (SPM) Status register condition Memory Status register can be written in (WEL bit is set to "1") and the BP0-BP3 bits can be changed The protected area cannot be programmed or erased. Note: 1. As defined by the values in the Block Protect (BP3, BP2, BP1, BP0) bits of the Status Register, as shown in Table 3. P/N: PM2606 Macronix Proprietary 37 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 26. WRSR flow start WREN command RDSR command No WEL=1? Yes WRSR command Write status register data RDSR command No WIP=0? Yes RDSR command Read WEL=0, BP[3:0], and QE data No Verify OK? Yes WRSR successfully P/N: PM2606 WRSR fail Macronix Proprietary 38 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-10. Read Data Bytes (READ) The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on the falling edge of SCLK at a maximum frequency fR. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single READ instruction. The address counter rolls over to 0 when the highest address has been reached. The sequence of issuing READ instruction is: CS# goes low→sending READ instruction code→ 4-byte address on SI→ data out on SO→to end READ operation can use CS# to high at any time during data out. Figure 27. Read Data Bytes (READ) Sequence (SPI Mode only) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Mode 0 SI Command 03h 32-Bit Address A31 A30 A29 A3 A2 A1 A0 MSB SO Data Out 1 High-Z D7 D6 D5 D4 D3 D2 D1 D0 D7 MSB P/N: PM2606 Data Out 2 Macronix Proprietary 39 MSB Rev. 1.2, July 17, 2020 MX25U51245G 54 10-11. Read Data Bytes at Higher Speed (FAST_READ) The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when the highest address has been reached. Read on SPI Mode The sequence of issuing FAST_READ instruction is: CS# goes low→ sending FAST_READ instruction code→ 4-byte address on SI→ 10 dummy cycles (default)→ data out on SO→ to end FAST_READ operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. Figure 28. Read at Higher Speed (FAST_READ) Sequence (SPI Mode) CS# SCLK Mode 3 Mode 0 0 1 2 4 5 Command SI SO 3 0Bh 6 7 8 9 10 36 37 38 39 40 41 42 Configurable Dummy Cycle 32 ADD Cycles A31 A30 A29 47 48 49 50 51 52 53 54 55 56 57 A3 A2 A1 A0 Data Out 1 High-Z Data Out 2 D7 D6 D5 D4 D3 D2 D1 D0 D7 MSB P/N: PM2606 Macronix Proprietary 40 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-12. Dual Output Read Mode (DREAD) The DREAD instruction enable double throughput of Serial NOR Flash in read mode. The address is latched on rising edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single DREAD instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing DREAD instruction, the following data out will perform as 2-bit instead of previous 1-bit. The sequence of issuing DREAD instruction is: CS# goes low→ sending DREAD instruction→ 4-byte address on SIO0→ 10 dummy cycles (default) on SIO0→ data out interleave on SIO1 & SIO0→ to end DREAD operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, DREAD instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. Figure 29. Dual Read Mode Sequence CS# 0 1 2 3 4 5 6 7 8 … Command SI/SIO0 SO/SIO1 38 39 40 9 SCLK 3Bh … 32 ADD Cycle A31 A30 … 49 50 51 52 53 54 55 A1 A0 High Impedance Configurable Dummy Cycle Data Out 1 Data Out 2 D6 D4 D2 D0 D6 D4 D7 D5 D3 D1 D7 D5 Notes: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2606 Macronix Proprietary 41 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-13. 2 x I/O Read Mode (2READ) The 2READ instruction enable double throughput of Serial NOR Flash in read mode. The address is latched on rising edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single 2READ instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 2READ instruction, the following address/dummy/data out will perform as 2-bit instead of previous 1-bit. The sequence of issuing 2READ instruction is: CS# goes low→ sending 2READ instruction→ 4-byte address interleave on SIO1 & SIO0→ 10 dummy cycles (default) on SIO1 & SIO0→ data out interleave on SIO1 & SIO0→ to end 2READ operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, 2READ instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. Figure 30. 2 x I/O Read Mode Sequence (SPI Mode only) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 21 22 23 24 25 26 33 34 35 36 37 38 39 40 Mode 3 SCLK Mode 0 Command SI/SIO0 SO/SIO1 BBh Configurable Dummy Cycle 16 ADD Cycles Data Out 1 Data Out 2 A30 A28 A26 A4 A2 A0 D6 D4 D2 D0 D6 D4 D2 D0 A31 A29 A27 A5 A3 A1 D7 D5 D3 D1 D7 D5 D3 D1 Mode 0 Notes: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2606 Macronix Proprietary 42 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-14. Quad Read Mode (QREAD) The QREAD instruction enable quad throughput of Serial NOR Flash in read mode. The address is latched on rising edge of SCLK, and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fQ. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single QREAD instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing QREAD instruction, the following data out will perform as 4-bit instead of previous 1-bit. The sequence of issuing QREAD instruction is: CS# goes low→ sending QREAD instruction → 4-byte address on SI → 10 dummy cycle (Default) → data out interleave on SIO3, SIO2, SIO1 & SIO0→ to end QREAD operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, QREAD instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. Figure 31. Quad Read Mode Sequence CS# 0 1 2 3 4 5 6 7 8 … Command SIO0 SIO1 SIO2 SIO3 37 38 39 40 41 9 SCLK 6Bh … 32 ADD Cycles A31 A30 … 48 49 50 51 52 A2 A1 A0 High Impedance 10 dummy cycles Data Data Out 1 Out 2 Data Out 3 D4 D0 D4 D0 D4 D5 D1 D5 D1 D5 High Impedance D6 D2 D6 D2 D6 High Impedance D7 D3 D7 D3 D7 Notes: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2606 Macronix Proprietary 43 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-15. 4 x I/O Read Mode (4READ) The 4READ instruction enable quad throughput of Serial NOR Flash in read mode. The address is latched on rising edge of SCLK, and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fQ. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single 4READ instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 4READ instruction, the following address/dummy/data out will perform as 4-bit instead of previous 1-bit. 4 x I/O Read on SPI Mode (4READ) The sequence of issuing 4READ instruction is: CS# goes low→ sending 4READ instruction→ 4-byte address interleave on SIO3, SIO2, SIO1 & SIO0→ 10 dummy cycles (Default) →data out interleave on SIO3, SIO2, SIO1 & SIO0→ to end 4READ operation can use CS# to high at any time during data out. 4 x I/O Read on QPI Mode (4READ) The 4READ instruction also support on QPI command mode. The sequence of issuing 4READ instruction QPI mode is: CS# goes low→ sending 4READ instruction→ 4-byte address interleave on SIO3, SIO2, SIO1 & SIO0→ 10 dummy cycles (Default) →data out interleave on SIO3, SIO2, SIO1 & SIO0→ to end 4READ operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, 4READ instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. P/N: PM2606 Macronix Proprietary 44 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 32. 4 x I/O Read Mode Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 7 8 24 25 26 27 27 9 10 11 12 13 14 15 16 17 18 19 SCLK Command 8 ADD Cycles EBh SIO0 High Impedance SIO1 High Impedance SIO2 High Impedance SIO3 Performance Enhance Indicator (Note1, 2) Data Data Out 1 Out 2 Configurable Dummy Cycle (Note 3) Data Out 3 A28 A24 A20 A16 A12 A8 A4 A0 P4 P0 D4 D0 D4 D0 D4 A29 A25 A21 A17 A13 A9 A5 A1 P5 P1 D5 D1 D5 D1 D5 A30 A26 A22 A18 A14 A10 A6 A2 P6 P2 D6 D2 D6 D2 D6 A31 A27 A23 A19 A15 A11 A7 A3 P7 P3 D7 D3 D7 D3 D7 Notes: 1. Hi-impedance is inhibited for the two clock cycles. 2. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) is inhibited. 3. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. Figure 33. 4 x I/O Read Mode Sequence (QPI Mode) CS# MODE 3 0 1 2 3 4 5 6 7 8 9 10 11 12 18 19 20 21 22 23 24 MODE 3 SCLK MODE 0 SIO[3:0] MODE 0 EBh Data In A28- A24- A20- A16- A12- A8A31 A27 A23 A19 A15 A11 A4A7 A0A3 X X X Configurable Dummy Cycle 32 ADD Cycles X X H0 L0 H1 L1 H2 L2 MSB Data Out Notes: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2606 Macronix Proprietary 45 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-16. 4 x I/O Double Transfer Rate Read Mode (4DTRD) The 4DTRD instruction enables Double Transfer Rate throughput on quad I/O of Serial NOR Flash in read mode. The address (interleave on 4 I/O pins) is latched on both rising and falling edge of SCLK, and data (interleave on 4 I/O pins) shift out on both rising and falling edge of SCLK. The 8-bit address can be latched-in at one clock, and 8-bit data can be read out at one clock, which means four bits at rising edge of clock, the other four bits at falling edge of clock. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single 4DTRD instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 4DTRD instruction, the following address/dummy/data out will perform as 8-bit instead of previous 1-bit. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. While Program/Erase/Write Status Register cycle is in progress, 4DTRD instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. P/N: PM2606 Macronix Proprietary 46 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 34. Fast Quad I/O DT Read (4DTRD) Sequence (SPI Mode) CS# Mode 3 0 7 SCLK 8 11 … Mode 0 12 21 … Command 22 23 … Performance Enhance Indicator 4 ADD Cycles Configurable Dummy Cycle A28 A24 … A4 A0 P4 P0 D4 D0 D4 D0 D4 SIO1 A29 A25 … A5 A1 P5 P1 D5 D1 D5 D1 D5 SIO2 A30 A26 … A6 A2 P6 P2 D6 D2 D6 D2 D6 SIO3 A31 A27 … A7 A3 P7 P3 D7 D3 D7 D3 D7 SIO0 EDh Notes: 1. Hi-impedance is inhibited for this clock cycle. 2. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) will result in entering the performance enhance mode. 3. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in configuration register. Figure 35. Fast Quad I/O DT Read (4DTRD) Sequence (QPI Mode) CS# Mode 3 0 1 2 5 SCLK 6 … Mode 0 Command 16 15 17 … 4 ADD Cycles Performance Enhance Indicator Configurable Dummy Cycle SIO[3:0] EDh A24 | A31 A20 | A23 …… A4 | A7 A0 | A3 P1 P0 H0 L0 H1 L1 H2 Notes: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in configuration register. P/N: PM2606 Macronix Proprietary 47 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-17. Preamble Bit The Preamble Bit data pattern supports system/memory controller to determine valid window of data output more easily and improve data capture reliability while the flash memory is running in high frequency. Preamble Bit data pattern can be enabled or disabled by setting the bit4 of Configuration register (Preamble bit Enable bit). Once the CR is set, the preamble bit is inputted into dummy cycles. Enabling preamble bit will not affect the function of enhance mode bit. In Dummy cycles, performance enhance mode bit still operates with the same function. Preamble bit will output after performance enhance mode bit. The preamble bit is a fixed 8-bit data pattern (00110100). While dummy cycle number reaches 10, the complete 8 bits will start to output right after the performance enhance mode bit. While dummy cycle is not sufficient of 10 cycles, the rest of the preamble bits will be cut. For example, 8 dummy cycles will cause 6 preamble bits to output, and 6 dummy cycles will cause 4 preamble bits to output. Figure 36. SDR 1I/O (10DC) CS# SCLK … … Dummy cycle Command cycle SI CMD Address cycle An … Preamble bits A0 SO 7 6 5 4 3 2 1 0 D7 D6 D7 D6 … Figure 37. SDR 1I/O (8DC) CS# SCLK … … Dummy cycle Command cycle SI SO P/N: PM2606 CMD Address cycle An … Preamble bits A0 7 6 5 Macronix Proprietary 48 4 3 2 D5 D4 … Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 38. SDR 2I/O (10DC) CS# SCLK … … Dummy cycle Command cycle SIO0 CMD SIO1 Address cycle Toggle bits Preamble bits A(n-1) … A0 7 6 5 4 3 2 1 0 D6 D4 D2 D0 An … A1 7 6 5 4 3 2 1 0 D7 D5 D3 D1 … … Figure 39. SDR 2I/O (8DC) CS# SCLK … … Dummy cycle Command cycle SIO0 SIO1 P/N: PM2606 CMD Address cycle Toggle bits Preamble bits A(n-1) … A0 7 6 5 4 3 2 D6 D4 D2 D0 An … A1 7 6 5 4 3 2 D7 D5 D3 D1 Macronix Proprietary 49 … … Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 40. SDR 4I/O (10DC) CS# SCLK … … Dummy cycle Command cycle Toggle bits Address cycle Preamble bits A(n-3) … A0 7 6 5 4 3 2 1 0 D4 D0 SIO1 A(n-2) … A1 7 6 5 4 3 2 1 0 D5 D1 SIO2 A(n-1) … A2 7 6 5 4 3 2 1 0 D6 D2 … SIO3 An … A3 7 6 5 4 3 2 1 0 D7 D3 … SIO0 CMD … … Figure 41. SDR 4I/O (8DC) CS# SCLK … … Dummy cycle Command cycle Address cycle Toggle bits Preamble bits A(n-3) … A0 7 6 5 4 3 2 D4 D0 SIO1 A(n-2) … A1 7 6 5 4 3 2 D5 D1 SIO2 A(n-1) … A2 7 6 5 4 3 2 D6 D2 SIO3 An … A3 7 6 5 4 3 2 D7 D3 SIO0 P/N: PM2606 CMD Macronix Proprietary 50 … … … … Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 42. DTR4IO (6DC) CS# SCLK … … Dummy cycle Command cycle SIO0 Address cycle CMD Toggle Bits Preamble bits … A0 7 6 5 4 3 2 1 0 D4 D0 D4 D0 D4 D0 D4 D0 … … A1 7 6 5 4 3 2 1 0 D5 D1 D5 D1 D5 D1 D5 D1 … … A2 7 6 5 4 3 2 1 0 D6 D2 D6 D2 D6 D2 D6 D2 … … A3 7 6 5 4 3 2 1 0 D7 D3 D7 D3 D7 D3 D7 D3 … A(n-3) SIO1 A(n-2) SIO2 A(n-1) SIO3 An P/N: PM2606 Macronix Proprietary 51 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-18. Performance Enhance Mode - XIP (execute-in-place) The device could waive the command cycle bits if the two cycle bits after address cycle toggles. Performance enhance mode is supported in both SPI and QPI mode. In QPI mode, “EBh” "EDh" and SPI “EBh” "EDh" commands support enhance mode. The performance enhance mode is not supported in dual I/O mode. To enter performance-enhancing mode, P[7:4] must be toggling with P[3:0]; likewise P[7:0]=A5h, 5Ah, F0h or 0Fh can make this mode continue and skip the next 4READ instruction. To leave enhance mode, P[7:4] is no longer toggling with P[3:0]; likewise P[7:0]=FFh, 00h, AAh or 55h along with CS# is afterwards raised and then lowered. Issuing ”FFh” data cycle can also exit enhance mode. The system then will leave performance enhance mode and return to normal operation. After entering enhance mode, following CS# go high, the device will stay in the read mode and treat CS# go low of the first clock as address instead of command cycle. Another sequence of issuing 4READ instruction especially useful in random access is : CS# goes low→sending 4 READ instruction→4-bytes address interleave on SIO3, SIO2, SIO1 & SIO0 →performance enhance toggling bit P[7:0]→ 8 dummy cycles (Default) →data out still CS# goes high → CS# goes low (reduce 4 Read instruction) → 4-bytes random access address. P/N: PM2606 Macronix Proprietary 52 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 43. 4 x I/O Read Performance Enhance Mode Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 24 25 26 27 28 n SCLK Mode 0 Data Out 2 Data Out n A28 A24 A20 A16 A12 A8 A4 A0 P4 P0 D4 D0 D4 D0 D4 D0 SIO1 A29 A25 A21 A17 A13 A9 A5 A1 P5 P1 D5 D1 D5 D1 D5 D1 SIO2 A30 A26 A22 A18 A14 A10 A6 A2 P6 P2 D6 D2 D6 D2 D6 D2 SIO3 A31 A27 A23 A19 A15 A11 A7 A3 P7 P3 D7 D3 D7 D3 D7 D3 Command 8 ADD Cycles Data Out 1 Performance enhance indicator (Note 1) Configurable Dummy Cycle (Note 2) EBh SIO0 CS# n+1 ........... n+9 ...... n+11 ........... n+19 ........... Mode 3 SCLK 8 ADD Cycles Data Out 1 Performance enhance indicator (Note 1) Data Out 2 Data Out n Mode 0 Configurable Dummy Cycle (Note 2) SIO0 A28 A24 A20 A16 A12 A8 A4 A0 P4 P0 D4 D0 D4 D0 D4 D0 SIO1 A29 A25 A21 A17 A13 A9 A5 A1 P5 P1 D5 D1 D5 D1 D5 D1 SIO2 A30 A26 A22 A18 A14 A10 A6 A2 P6 P2 D6 D2 D6 D2 D6 D2 SIO3 A31 A27 A23 A19 A15 A11 A7 A3 P7 P3 D7 D3 D7 D3 D7 D3 Notes: 1. If not using performance enhance recommend to keep 1 or 0 in performance enhance indicator. 2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in configuration register. 3. Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF. P/N: PM2606 Macronix Proprietary 53 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 44. 4 x I/O Read Performance Enhance Mode Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 A16- A12A19 A15 A8A11 A4A7 A0A3 10 11 12 13 19 20 21 22 23 H0 L0 H1 L1 SCLK Mode 0 SIO[3:0] A28- A24- A20A31 A27 A23 EBh X X X MSB LSB MSB LSB P(7:4) P(3:0) 8 ADD Cycles Command Data Out performance enhance indicator Configurable Dummy Cycles (Note 1) CS# n+1 ............. SCLK Mode 0 SIO[3:0] A28- A24A31 A27 A20- A16- A12A23 A19 A15 A8A11 A4A7 A0A3 X X P(7:4) P(3:0) 8 ADD Cycles performance enhance indicator X H0 L0 H1 L1 MSB LSB MSB LSB Data Out Configurable Dummy Cycles (Note 1) Notes: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in configuration register. 2. Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF. P/N: PM2606 Macronix Proprietary 54 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 45. 4 x I/O DT Read Performance Enhance Mode Sequence (SPI Mode) CS# Mode 3 SCLK Mode 0 0 7 8 11 … 12 21 … Command 22 23 … n … Performance Enhance Indicator 4 ADD Cycles Configurable Dummy Cycle A28 A24 … A4 A0 P4 P0 D4 D0 D4 D0 … D4 D0 SIO1 A29 A25 … A5 A1 P5 P1 D5 D1 D5 D1 … D5 D1 SIO2 A30 A26 … A6 A2 P6 P2 D6 D2 D6 D2 … D6 D2 SIO3 A31 A27 … A7 A3 P7 P3 D7 D3 D7 D3 … D7 D3 SIO0 EDh CS# n+1 SCLK …… n+5 Mode 3 … … 4 ADD Cycles Mode 0 Performance Enhance Indicator Configurable Dummy Cycle SIO0 A28 A24 … A4 A0 P4 P0 D4 D0 D4 D0 SIO1 A29 A25 … A5 A1 P5 P1 D5 D1 D5 D1 SIO2 A30 A26 … A6 A2 P6 P2 D6 D2 D6 D2 SIO3 A31 A27 … A7 A3 P7 P3 D7 D3 D7 D3 Notes: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. 2. Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF. P/N: PM2606 Macronix Proprietary 55 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 46. 4 x I/O DT Read Performance Enhance Mode Sequence (QPI Mode) CS# Mode 3 0 1 2 5 SCLK 6 15 … Mode 0 Command 16 17 … 4 ADD Cycles n … Performance Enhance Indicator Configurable Dummy Cycle SIO[3:0] A28 | A31 EDh A24 | A27 …… A0 | A3 A4 | A7 P1 P0 H0 L0 H1 L1 … Hn Ln CS# … n+1 SCLK … n+5 … Mode 3 … 4 ADD Cycles Mode 0 Performance Enhance Indicator Configurable Dummy Cycle SIO[3:0] A28 | A31 A24 | A27 …… A4 | A7 A0 | A3 P1 P0 H0 L0 H1 L1 Notes: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. 2. Reset the performance enhance mode, if P1=P0, ex: AA, 00, FF. P/N: PM2606 Macronix Proprietary 56 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-19. Burst Read To set the Burst length, following command operation is required to issue command: “C0h” in the first Byte (8-clocks), following 4 clocks defining wrap around enable with “0h” and disable with“1h”. The next 4 clocks are to define wrap around depth. Their definitions are as the following table: Data 00h 01h 02h 03h 1xh Wrap Around Yes Yes Yes Yes No Wrap Depth 8-byte 16-byte 32-byte 64-byte X The wrap around unit is defined with the 8/16/32/64Byte, with random initial address. It is defined as “wrap-around mode disable” for the default state of the device. To exit wrap around, it is required to issue another “C0h” command in which data=‘1xh”. Otherwise, wrap around status will be retained until power down or reset command. To change wrap around depth, it is requried to issue another “C0h” command in which data=“0xh”. Both QPI and SPI “EBh” support wrap around feature after wrap around is enabled. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. Figure 47. SPI Mode CS# Mode 3 0 1 2 3 4 5 6 7 8 9 D7 D6 10 11 12 13 14 15 SCLK Mode 0 SI C0h D5 D4 D3 D2 D1 D0 Figure 48. QPI Mode CS# Mode 3 0 1 2 3 SCLK Mode 0 SIO[3:0] C0h H0 MSB L0 LSB Note: MSB=Most Significant Bit LSB=Least Significant Bit P/N: PM2606 Macronix Proprietary 57 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-20. Fast Boot The Fast Boot Feature provides the ability to automatically execute read operation after power on cycle or reset without any read instruction. A Fast Boot Register is provided on this device. It can enable the Fast Boot function and also define the number of delay cycles and start address (where boot code being transferred). Instruction WRFBR (write fast boot register) and ESFBR (erase fast boot register) can be used for the status configuration or alternation of the Fast Boot Register bit. RDFBR (read fast boot register) can be used to verify the program state of the Fast Boot Register. The default number of delay cycles is 13 cycles, and there is a 16bytes boundary address for the start of boot code access. When CS# starts to go low, data begins to output from default address after the delay cycles (default as 13 cycles). After CS# returns to go high, the device will go back to standard SPI mode and user can start to input command. In the fast boot data out process from CS# goes low to CS# goes high, a minimum of one byte must be output. Once Fast Boot feature has been enabled, the device will automatically start a read operation after power on cycle, reset command, or hardware reset operation. The fast Boot feature can support Quad I/O interface. The QE bit of Status Register is set to “1”, the data is output by Quad I/O interface. Fast Boot Register (FBR) Bits 31 to 4 Description FBSA (FastBoot Start Address) 3 x 2 to 1 FBSD (FastBoot Start Delay Cycle) 0 FBE (FastBoot Enable) Bit Status Default State 16 bytes boundary address for the start of boot FFFFFFF code access. 1 00: 7 delay cycles 01: 9 delay cycles 10: 11 delay cycles 11: 13 delay cycles 0=FastBoot is enabled. 1=FastBoot is not enabled. Type NonVolatile NonVolatile 11 NonVolatile 1 NonVolatile Note: If FBSD = 11, the maximum clock frequency is 133 MHz If FBSD = 10, the maximum clock frequency is 104 MHz If FBSD = 01, the maximum clock frequency is 84 MHz If FBSD = 00, the maximum clock frequency is 70 MHz P/N: PM2606 Macronix Proprietary 58 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 49. Fast Boot Sequence (QE=1) CS# Mode 3 0 - - - - - - - n n+1 n+2 n+3 n+5 n+6 n+7 n+8 n+9 SCLK Mode 0 SIO0 SIO1 SIO2 SIO3 Delay Cycles Data Data Out 1 Out 2 High Impedance High Impedance High Impedance High Impedance Data Out 3 Data Out 4 4 0 4 0 4 0 4 0 4 5 1 5 1 5 1 5 1 5 6 2 6 2 6 2 6 2 6 7 3 7 3 7 3 7 3 7 MSB Note: If FBSD = 11, delay cycles is 13 and n is 12. If FBSD = 10, delay cycles is 11 and n is 10. If FBSD = 01, delay cycles is 9 and n is 8. If FBSD = 00, delay cycles is 7 and n is 6. P/N: PM2606 Macronix Proprietary 59 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 50. Read Fast Boot Register (RDFBR) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 37 38 39 40 41 SCLK Mode 0 Command SI 16h Data Out 1 High-Z SO 7 6 Data Out 2 5 26 25 24 7 6 MSB MSB Figure 51. Write Fast Boot Register (WRFBR) Sequence CS# 0 Mode 3 1 2 3 4 5 6 7 8 9 10 37 38 39 SCLK Mode 0 Command SI Fast Boot Register 17h 7 6 5 26 25 24 MSB High-Z SO Figure 52. Erase Fast Boot Register (ESFBR) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 SCLK Mode 0 SI SO P/N: PM2606 Command 18h High-Z Macronix Proprietary 60 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-21. Sector Erase (SE) The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". The instruction is used for any 4K-byte sector. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before sending the Sector Erase (SE). Any address of the sector (Please refer to "5. MEMORY ORGANIZATION") is a valid address for Sector Erase (SE) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of the address byte been latched-in); otherwise, the instruction will be rejected and not executed. The sequence of issuing SE instruction is: CS# goes low→ sending SE instruction code→ 4-byte address on SI→ CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Sector Erase cycle is in progress. The WIP sets 1 during the tSE timing, and clears when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode), the Sector Erase (SE) instruction will not be executed on the block. Figure 53. Sector Erase (SE) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 7 8 9 37 38 39 SCLK … 32-Bit Address Command SI 20h … A31 A30 A2 A1 A0 MSB Figure 54. Sector Erase (SE) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 A4A7 A0A3 SCLK Mode 0 32-Bit Address Command SIO[3:0] 20h A28- A24- A20- A16- A12A31 A27 A23 A19 A15 A8A11 MSB P/N: PM2606 Macronix Proprietary 61 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-22. Block Erase (BE32K) The Block Erase (BE32K) instruction is for erasing the data of the chosen block to be "1". The instruction is used for 32K-byte block erase operation. A Write Enable (WREN) instruction be executed to set the Write Enable Latch (WEL) bit before sending the Block Erase (BE32K). Any address of the block (Please refer to "5. MEMORY ORGANIZATION") is a valid address for Block Erase (BE32K) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed. Address bits [Am-A15] (Am is the most significant address) select the 32KB block address. The sequence of issuing BE32K instruction is: CS# goes low→ sending BE32K instruction code→ 4-byte address on SI→CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The self-timed Block Erase Cycle time (tBE32K) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while during the Block Erase cycle is in progress. The WIP sets during the tBE32K timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode), the Block Erase (BE32K) instruction will not be executed on the block. Figure 55. Block Erase 32KB (BE32K) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 37 38 39 9 SCLK Mode 0 Command SI 32-Bit Address 52h A31 A30 A2 A1 A0 MSB Figure 56. Block Erase 32KB (BE32K) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 SCLK Mode 0 32-Bit Address Command SIO[3:0] 52h A28- A24- A20- A16- A12A31 A27 A23 A19 A15 A8A11 A4A7 A0A3 MSB P/N: PM2606 Macronix Proprietary 62 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-23. Block Erase (BE) The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used for 64K-byte block erase operation. A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Block Erase (BE). Any address of the block (Please refer to "5. MEMORY ORGANIZATION") is a valid address for Block Erase (BE) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed. The sequence of issuing BE instruction is: CS# goes low→ sending BE instruction code→ 4-byte address on SI→ CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Block Erase cycle is in progress. The WIP sets during the tBE timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode), the Block Erase (BE) instruction will not be executed on the block. Figure 57. Block Erase (BE) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 37 38 39 SCLK Mode 0 Command SI 32-Bit Address D8h A31 A31 A2 A1 A0 MSB Figure 58. Block Erase (BE) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 SCLK Mode 0 32-Bit Address Command SIO[3:0] D8h A28- A24- A20- A16- A12A31 A27 A23 A19 A15 A8A11 A4A7 A0A3 MSB P/N: PM2606 Macronix Proprietary 63 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-24. Chip Erase (CE) The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The CS# must go high exactly at the byte boundary, otherwise the instruction will be rejected and not executed. The sequence of issuing CE instruction is: CS# goes low→sending CE instruction code→CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Chip Erase cycle is in progress. The WIP sets during the tCE timing, and clears when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. When the chip is under "Block protect (BP) Mode" (WPSEL=0). The Chip Erase (CE) instruction will not be executed, if one (or more) sector is protected by BP3-BP0 bits. It will be only executed when BP3-BP0 all set to "0". When the chip is under "Advances Sector Protect Mode" (WPSEL=1). The Chip Erase (CE) instruction will be executed on unprotected block. The protected Block will be skipped. If one (or more) 4K byte sector was protected in top or bottom 64K byte block, the protected block will also skip the chip erase command. Figure 59. Chip Erase (CE) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 SCLK Mode 0 Command SI 60h or C7h Figure 60. Chip Erase (CE) Sequence (QPI Mode) CS# Mode 3 0 1 SCLK Mode 0 SIO[3:0] P/N: PM2606 Command 60h or C7h Macronix Proprietary 64 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-25. Page Program (PP) The Page Program (PP) instruction is for programming memory bits to "0". One to 256 bytes can be sent to the device to be programmed. A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Page Program (PP). If more than 256 data bytes are sent to the device, only the last 256 data bytes will be accepted and the previous data bytes will be disregarded. The Page Program instruction requires that all the data bytes fall within the same 256-byte page. The low order address byte A[7:0] specifies the starting address within the selected page. Bytes that will cross a page boundary will wrap to the beginning of the selected page. The device can accept (256 minus A[7:0]) data bytes without wrapping. If 256 data bytes are going to be programmed, A[7:0] should be set to 0. The sequence of issuing PP instruction is: CS# goes low→ sending PP instruction code→ 4-byte address on SI→ at least 1-byte on data on SI→ CS# goes high. The CS# must be kept to low during the whole Page Program cycle; The CS# must go high exactly at the byte boundary( the latest eighth bit of data being latched in), otherwise the instruction will be rejected and will not be executed. The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Page Program cycle is in progress. The WIP sets during the tPP timing, and clears when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the page is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode), the Page Program (PP) instruction will not be executed. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. P/N: PM2606 Macronix Proprietary 65 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 61. Page Program (PP) Sequence (SPI Mode) 2087 2086 2085 2084 2083 2082 36 37 38 39 40 41 42 43 44 45 46 47 2081 0 1 2 3 4 5 6 7 8 9 10 2080 CS# SCLK Command 32 ADD Cycles 02h SI A31 A30 A29 A3 A2 A1 A0 Data Byte 1 Data Byte 256 D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0 MSB MSB Figure 62. Page Program (PP) Sequence (QPI Mode) CS# Mode 3 0 1 2 ..... SCLK Mode 0 32 ADD Cycles Command SIO[3:0] P/N: PM2606 02h A28- A24A31 A27 A20- A16- A12A23 A19 A15 Data Byte Data Byte Data Byte 1 2 3 A8A11 A4A7 A0A3 H0 L0 Macronix Proprietary 66 H1 L1 H2 L2 ..... ..... Data Byte 256 H255 L255 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-26. 4 x I/O Page Program (4PP) The Quad Page Program (4PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit and Quad Enable (QE) bit must be set to "1" before sending the Quad Page Program (4PP). The Quad Page Programming takes four pins: SIO0, SIO1, SIO2, and SIO3 as address and data input, which can improve programmer performance and the effectiveness of application. The other function descriptions are as same as standard page program. The sequence of issuing 4PP instruction is: CS# goes low→ sending 4PP instruction code→ 4-byte address on SIO[3:0]→ at least 1-byte on data on SIO[3:0]→CS# goes high. If the page is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode), the Quad Page Program (4PP) instruction will not be executed. Figure 63. 4 x I/O Page Program (4PP) Sequence (SPI Mode only) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 SCLK … Command 8 ADD cycles Data Data Byte 1 Byte 2 Data Byte 256 A28 A24 A20 A16 A12 A8 A4 A0 D4 D0 D4 D0 … D4 D0 SIO1 A29 A25 A21 A17 A13 A9 A5 A1 D5 D1 D5 D1 … D5 D1 SIO2 A30 A26 A22 A18 A14 A10 A6 A2 D6 D2 D6 D2 … D6 D2 SIO3 A31 A27 A23 A19 A15 A11 A7 A3 D7 D3 D7 D3 … D7 D3 SIO0 P/N: PM2606 526 527 38h Macronix Proprietary 67 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-27. Deep Power-down (DP) The Deep Power-down (DP) instruction is for setting the device to minimum power consumption (the standby current is reduced from ISB1 to ISB2). The Deep Power-down mode requires the Deep Power-down (DP) instruction to enter, during the Deep Power-down mode, the device is not active and all Write/Program/Erase instruction are ignored. When CS# goes high, it's only in deep power-down mode not standby mode. It's different from Standby mode. The sequence of issuing DP instruction is: CS# goes low→sending DP instruction code→CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. Once the DP instruction is set, all instruction will be ignored except the Release from Deep Power-down mode (RDP) and Read Electronic Signature (RES) instruction and softreset command. (those instructions allow the ID being reading out). When Power-down, or software reset command the deep power-down mode automatically stops, and when power-up, the device automatically is in standby mode. For DP instruction the CS# must go high exactly at the byte boundary (the latest eighth bit of instruction code been latched-in); otherwise, the instruction will not executed. As soon as Chip Select (CS#) goes high, a delay of tDP is required before entering the Deep Power-down mode. Figure 64. Deep Power-down (DP) Sequence (SPI Mode) CS# 0 Mode 3 1 2 3 4 5 6 tDP 7 SCLK Mode 0 Command B9h SI Stand-by Mode Deep Power-down Mode Figure 65. Deep Power-down (DP) Sequence (QPI Mode) CS# Mode 3 0 tDP 1 SCLK Mode 0 Command SIO[3:0] B9h Stand-by Mode P/N: PM2606 Deep Power-down Mode Macronix Proprietary 68 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-28. Enter Secured OTP (ENSO) The ENSO instruction is for entering the additional 8K-bit secured OTP mode. While device is in secured OTPmode, main array access is not available. The additional 8K-bit secured OTP is independent from main array and may be used to store unique serial number for system identifier. After entering the Secured OTP mode, follow standard read or program procedure to read out the data or update data. The Secured OTP data cannot be updated again once it is lock-down. The sequence of issuing ENSO instruction is: CS# goes low→ sending ENSO instruction to enter Secured OTP mode→ CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. Please note that after issuing ENSO command user can only access secure OTP region with standard read or program procedure. Furthermore, once security OTP is lock down, only read related commands are valid. 10-29. Exit Secured OTP (EXSO) The EXSO instruction is for exiting the secured OTP mode. The sequence of issuing EXSO instruction is: CS# goes low→ sending EXSO instruction to exit Secured OTP mode→ CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. 10-30. Read Security Register (RDSCUR) The RDSCUR instruction is for reading the value of Security Register bits. The Read Security Register can be read at any time (even in program/erase/write status register/write security register condition) and continuously. The sequence of issuing RDSCUR instruction is : CS# goes low→sending RDSCUR instruction→Security Register data out on SO→ CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. 10-31. Write Security Register (WRSCUR) The WRSCUR instruction is for changing the values of Security Register Bits. The WREN (Write Enable) instruction is required before issuing WRSCUR instruction. The WRSCUR instruction may change the values of bit1 (LDSO bit) for customer to lock-down the Secured OTP area. Once the LDSO bit is set to "1", the Secured OTP area cannot be updated any more. The sequence of issuing WRSCUR instruction is :CS# goes low→ sending WRSCUR instruction → CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The CS# must go high exactly at the boundary; otherwise, the instruction will be rejected and not executed. P/N: PM2606 Macronix Proprietary 69 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-32. Write Protection Selection (WPSEL) There are two write protection methods provided on this device, (1) Block Protection (BP) mode or (2) Advanced Sector Protection mode. The protection modes are mutually exclusive. The WPSEL bit selects which protection mode is enabled. If WPSEL=0 (factory default), BP mode is enabled and Advanced Sector Protection mode is disabled. If WPSEL=1, Advanced Sector Protection mode is enabled and BP mode is disabled. The WPSEL command is used to set WPSEL=1. A WREN command must be executed to set the WEL bit before sending the WPSEL command. Please note that the WPSEL bit is an OTP bit. Once WPSEL is set to “1”, it cannot be programmed back to “0”. When WPSEL = 0: Block Protection (BP) mode, The memory array is write protected by the BP3~BP0 bits. When WPSEL =1: Advanced Sector Protection mode, Blocks are individually protected by their own SPB or DPB. On power-up, all blocks are write protected by the Dynamic Protection Bits (DPB) by default. The Advanced Sector Protection instructions WRLR, RDLR, WRPASS, RDPASS, PASSULK, WRSPB, ESSPB, WRDPB, RDDPB, GBLK, and GBULK are activated. The BP3~BP0 bits of the Status Register are disabled and have no effect. The sequence of issuing WPSEL instruction is: CS# goes low → send WPSEL instruction to enable the Advanced Sector Protect mode → CS# goes high. Write Protection Selection Start (Default in BP Mode) WPSEL=1 Set WPSEL Bit Advanced Sector Protection Set Lock Register WPSEL=0 Block Protection (BP) Bit 2 =1 Bit 2 =0 Password Protection P/N: PM2606 Solid Protection Macronix Proprietary 70 Dynamic Protection Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 66. WPSEL Flow start WREN command RDSCUR command Yes WPSEL=1? No WPSEL disable, block protected by BP[3:0] WPSEL command RDSR command WIP=0? No Yes RDSCUR command WPSEL=1? No Yes WPSEL set successfully WPSEL set fail WPSEL enable. Block protected by Advance Sector Protection P/N: PM2606 Macronix Proprietary 71 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-33. Advanced Sector Protection There are two ways to implement software Advanced Sector Protection on this device. Through these two protection methods, user can disable or enable the programming or erasing op­eration to any individual sector or all sectors. There is a non-volatile (SPB) and volatile (DPB) protection bit related to the single sector in main flash array. Each of the sectors is protected from programming or erasing operation when the bit is set. The figure below helps describing an overview of these methods. The device is default to the Solid mode when shipped from factory. The detail algorithm of advanced sector protection is shown as follows: Figure 67. Advanced Sector Protection Overview Start Bit 2=1 Bit 2=0 Set Lock Register ? Solid Protection Mode Password Protection Mode Set 64 bit Password Set SPB Lock Down Bit ? (SPBLKDN) Bit 6 = 0 SPB Locked All SPB can not be changeable Bit 6 = 1 SPB Unlocked SPB is changeable Solid Protection Bits (SPB) Dynamic Protect Bit Register (DPB) DPB=1 sector protect Sector Array SPB=1 Write Protect SPB=0 Write Unprotect DPB=0 sector unprotect P/N: PM2606 DPB 0 SA 0 SPB 0 DPB 1 SA 1 SPB 1 DPB 2 SA 2 SPB 2 : : : : : : DPB N-1 SA N-1 SPB N-1 DPB N SA N SPB N Macronix Proprietary 72 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-33-1. Lock Register The Lock Register is a 16-bit register. Lock Register Bit[6] is SPB Lock Down Bit (SPBLKDN) which is assigned to control all SPB bit status. Lock Register Bit[2] is Password Protection Mode Lock Bit. Both bits are defaulted as 1 when shipping from factory. When SPBLKDN is 1, SPB can be changed. When it is locked as 0, all SPB can not be changed. Users can choose their favorite sector protecting method via setting Lock Register Bit[2] using WRLR command. The device default status was in Solid Protection Mode (Bit[2]=1), Once Bit[2] has been programmed (cleared to "0"), the device will enable the Password Protection Mode and lock in that mode permanently. In Solid Protection Mode (Bit[2]=1, factory default), the SPBLKDN can be programmed using the WRLR command and permanently lock down the SPB bits. After programming SPBLKDN to 0, all SPB can not be changed anymore, and neither Lock Register Bit[2] nor Bit[6] can be altered anymore. In Password Protection Mode (Bit[2]=0), the SPBLKDN becomes a volatile bit with default 0 (SPB bit protected). A correct password is required with PASSULK command to set SPBLKDN to 1. To clear SPBLKDN back to 0, a Hardware/Software Reset or power-up cycle is required. If user selects Password Protection mode, the password setting is required. User can set password by issuing WRPASS command before Lock Register Bit[2] set to 0. Lock Register Bits Description Bit Status 15 to 7 Reserved SPB Lock Down bit 6 (SPBLKDN) 5 to 3 Reserved 2 Default Reserved 0: SPB bit Protected 1: SPB bit Unprotected Reserved Reserved Solid Protection Mode: 1 Bit 2=1: OTP Password Protection Mode: 0 Bit 2=0: Volatile Reserved Password Protection 0=Password Protection Mode Enable Mode Lock Bit 1= Solid Protection Mode 1 to 0 Reserved Type 1 OTP Reserved Reserved Figure 68. Read Lock Register (RDLR) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK Mode 0 command 2Dh SI SO High-Z Register Out 7 6 5 4 3 2 Register Out 1 P/N: PM2606 0 15 14 13 12 11 10 9 8 7 MSB MSB Macronix Proprietary 73 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 69. Write Lock Register (WRLR) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 SCLK Mode 0 SI Command 2Ch SO High-Z Lock Register In 7 6 5 4 3 2 1 0 15 14 13 12 11 10 9 8 MSB 10-33-2. Solid Protection Bits The Solid Protection Bits (SPBs) are nonvolatile bits for enabling or disabling write-protection to sectors and blocks. The SPB bits have the same endurance as the Flash memory. An SPB is assigned to each 4KB sector in the bottom and top 64KB of memory and to each 64KB block in the remaining memory. The factory default state of the SPB bits is “0”, which has the sector/block write-protection disabled. When an SPB is set to “1”, the associated sector or block is write-protected. Program and erase operations on the sector or block will be inhibited. SPBs can be individually set to “1” by the WRSPB command. However, the SPBs cannot be individually cleared to “0”. Issuing the ESSPB command clears all SPBs to “0”. A WREN command must be executed to set the WEL bit before sending the WRSPB or ESSPB command. The SPBLKDN bit must be “1” before any SPB can be modified. In Solid Protection mode the SPBLKDN bit defaults to “1” after power-on or reset. Under Password Protection mode, the SPBLKDN bit defaults to “0” after power-on or reset, and a PASSULK command with a correct password is required to set the SPBLKDN bit to “1”. The RDSPB command reads the status of the SPB of a sector or block. The RDSPB command returns 00h if the SPB is “0”, indicating write-protection is disabled. The RDSPB command returns FFh if the SPB is “1”, indicating write-protection is enabled. Note: If SPBLKDN=0, commands to set or clear the SPB bits will be ignored. SPB Register Bit Description 7 to 0 SPB (Solid protected Bit) P/N: PM2606 Bit Status 00h= SPB for the sector address unprotected FFh= SPB for the sector address protected Macronix Proprietary 74 Default Type 00h Non-volatile Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 70. Read SPB Status (RDSPB) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 37 38 39 40 41 42 43 44 45 46 47 9 SCLK Mode 0 Command SI 32-Bit Address E2h A31 A30 A2 A1 A0 MSB Data Out High-Z SO 7 6 5 4 3 2 1 0 MSB Figure 71. SPB Erase (ESSPB) Sequence CS# 1 0 Mode 3 2 3 4 5 6 7 SCLK Mode 0 Command SI E4h High-Z SO Figure 72. SPB Program (WRSPB) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 37 38 39 9 SCLK Mode 0 SI Command 32-Bit Address E3h A31 A30 A2 A1 A0 MSB P/N: PM2606 Macronix Proprietary 75 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-33-3. Dynamic Write Protection Bits The Dynamic Protection features a volatile type protection to each individual sector. It can protect sectors from unintentional change, and is easy to disable when there are necessary changes. All DPBs are default as protected (FFh) after reset or upon power up cycle. Via setting up Dynamic Protection bit (DPB) by write DPB command (WRDPB), user can cancel the Dynamic Protection of associated sector. The Dynamic Protection only works on those unprotected sectors whose SPBs are cleared. After the DPB state is cleared to “0”, the sector can be modified if the SPB state is unprotected state. DPB Register Bit Description 7 to 0 DPB (Dynamic protected Bit) Bit Status Default 00h= DPB for the sector address unprotected FFh FFh= DPB for the sector address protected Type Volatile Figure 73. Read DPB Register (RDDPB) Sequence CS# 0 Mode 3 1 2 3 4 5 6 7 8 37 38 39 40 41 42 43 44 45 46 47 9 SCLK Mode 0 Command SI 32-Bit Address E0h A31 A30 A2 A1 A0 MSB Data Out High-Z SO 7 6 5 4 3 2 1 0 MSB Figure 74. Write DPB Register (WRDPB) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 37 38 39 40 41 42 43 44 45 46 47 9 SCLK Mode 0 SI Command E1h A31 A30 A2 A1 A0 MSB P/N: PM2606 Data Byte 1 32-Bit Address 7 6 5 4 3 2 1 0 MSB Macronix Proprietary 76 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-33-4. Password Protection Mode Password Protection mode potentially provides a higher level of security than Solid Protection mode. In Password Protection mode, the SPBLKDN bit defaults to “0” after a power-on cycle or reset. When SPBLKDN=0, the SPBs are locked and cannot be modified. A 64-bit password must be provided to unlock the SPBs. The PASSULK command with the correct password will set the SPBLKDN bit to “1” and unlock the SPB bits. After the correct password is given, a wait of 2us is necessary for the SPB bits to unlock. The Status Register WIP bit will clear to “0” upon completion of the PASSULK command. Once unlocked, the SPB bits can be modified. A WREN command must be executed to set the WEL bit before sending the PASSULK command. Several steps are required to place the device in Password Protection mode. Prior to entering the Password Protection mode, it is necessary to set the 64-bit password and verify it. The WRPASS command writes the password and the RDPASS command reads back the password. Password verification is permitted until the Password Protection Mode Lock Bit has been written to “0”. Password Protection mode is activated by programming the Password Protection Mode Lock Bit to “0”. This operation is not reversible. Once the bit is programmed, it cannot be erased. The device remains permanently in Password Protection mode and the 64-bit password can neither be retrieved nor reprogrammed. The password is all “1’s” when shipped from the factory. The WRPASS command can only program password bits to “0”. The WRPASS command cannot program “0’s” back to “1’s”. All 64-bit password combinations are valid password options. A WREN command must be executed to set the WEL bit before sending the WRPASS command. ● The unlock operation will fail if the password provided by the PASSULK command does not match the stored password. This will set the P_FAIL bit to “1” and insert a delay before clearing the WIP bit to “0”. User has to wait 150us before issuing another PASSULK command. This restriction makes it impractical to attempt all combinations of a 64-bit password (such an effort would take millions of years). Monitor the WIP bit to determine whether the device has completed the PASSULK command. ● When a valid password is provided, the PASSULK command does not insert the delay before returning the WIP bit to zero. The SPBLKDN bit will set to “1” and the P_FAIL bit will be “0”. ● It is not possible to set the SPBLKDN bit to “1” if the password had not been set prior to the Password Protection mode being selected. Password Register (PASS) Bits Field Function Type Name 63 to 0 PWD P/N: PM2606 Description Default State Non-volatile OTP storage of 64 bit password. The Hidden password is no longer readable after the Password OTP FFFFFFFFFFFFFFFFh Password Protection mode is selected by programming Lock Register bit 2 to zero. Macronix Proprietary 77 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 75. Read Password Register (RDPASS) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 39 40 47 48 109 110 SCLK Mode 0 Command SI 32-bit Address 27h 0 0 0 8 Dummy 0 Data Out High-Z SO 7 6 58 57 56 High-Z MSB Figure 76. Write Password Register (WRPASS) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 39 40 8 102 103 SCLK Mode 0 32-bit Address Command SI 28h 0 0 0 Password 0 7 6 58 57 56 MSB SO High-Z Figure 77. Password Unlock (PASSULK) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 39 40 8 102 103 SCLK Mode 0 32-bit Address Command SI 29h 0 0 0 Password 0 7 6 58 57 56 MSB SO P/N: PM2606 High-Z Macronix Proprietary 78 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-33-5. Gang Block Lock/Unlock (GBLK/GBULK) These instructions are only effective after WPSEL was executed. The GBLK/GBULK instruction is a chip-based protected or unprotected operation. It can enable or disable all DPB. The WREN (Write Enable) instruction is required before issuing GBLK/GBULK instruction. The sequence of issuing GBLK/GBULK instruction is: CS# goes low → send GBLK/GBULK (7Eh/98h) instruction →CS# goes high. The CS# must go high exactly at the byte boundary, otherwise, the instruction will be rejected and not be executed. 10-33-6. Sector Protection States Summary Table Protection Status DPB bit SPB bit 0 0 0 1 1 0 1 1 P/N: PM2606 Sector State Unprotect Protect Protect Protect Macronix Proprietary 79 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-34. Program Suspend and Erase Suspend The Suspend instruction interrupts a Program or Erase operation to allow the device conduct other operations. After the device has entered the suspended state, the memory array can be read except for the page being programmed or the sector being erased. Security Register bit 2 (PSB) and bit 3 (ESB) can be read to check the suspend status. The PSB (Program Suspend Bit) sets to “1” when a program operation is suspended. The ESB (Erase Suspend Bit) sets to “1” when an erase operation is suspended. The PSB or ESB clears to “0” when the program or erase operation is resumed. When the Serial NOR Flash receives the Suspend instruction, Program Suspend Latency(tPSL) or Erase Suspend latency(tESL) is required to complete suspend operation. (Refer to "Table 18. AC CHARACTERISTICS") After the device has entered the suspended state, the WEL bit is clears to “0” and the PSB or ESB in security register is set to “1”, then the device is ready to acceptanother command. However, some commands can be executed without tPSL or tESL latency during the program/erase suspend, and can be issued at any time during the Suspend. Please refer to "Table 12. Acceptable Commands During Suspend". Figure 78. Suspend to Read Latency tPSL / tESL CS# P/N: PM2606 Suspend Command Macronix Proprietary 80 Read Command Rev. 1.2, July 17, 2020 MX25U51245G 54 Table 12. Acceptable Commands During Suspend Command Name Command Code Suspend Type Program Suspend Erase Suspend 03h 0Bh BBh 3Bh EBh 6Bh EDh 5Ah 9Fh AFh C0h B1h C1h 06h 30h 2Dh E2h 16h E0h 35h F5h • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 04h 05h 15h 2Bh ABh 90h 66h 99h 00h • • • • • • • • • • • • • • • • • • Commands which require tPSL/tESL delay READ FAST READ 2READ DREAD 4READ QREAD 4DTRD RDSFDP RDID QPIID SBL ENSO EXSO WREN RESUME RDLR RDSPB RDFBR RDDPB EQIO RSTQIO Commands not required tPSL/tESL delay WRDI RDSR RDCR RDSCUR RES REMS RSTEN RST NOP P/N: PM2606 Macronix Proprietary 81 Rev. 1.2, July 17, 2020 MX25U51245G 54 10-35. Program Resume and Erase Resume The Resume instruction resumes a suspended Program or Erase operation. After the device receives the Resume instruction, the WEL and WIP bits are set to “1” and the PSB or ESB is cleared to “0”.The program or erase operation will continue until it is completed or until another Suspend instruction is received. To issue another Suspend instruction, the minimum resume-to-suspend latency (tPRS or tERS) is required. However, in order to finish the program or erase progress, a period equal to or longer than the typical timing is required. To issue other command except suspend instruction, a latency of the self-timed Page Program Cycle time (tPP) or Sector Erase (tSE) is required. The WEL and WIP bits are cleared to “0” after the Program or Erase operation is completed. Note: The Resume instruction will be ignored during Performance Enhance Mode. Make sure the Serial NOR Flash has exited the Performance Enhance Mode before issuing the Resume instruction. Figure 79. Resume to Read Latency CS# Resume Command tSE / tBE / tPP Read Command Figure 80. Resume to Suspend Latency CS# P/N: PM2606 Resume Command tPRS / tERS Macronix Proprietary 82 Suspend Command Rev. 1.2, July 17, 2020 MX25U51245G 54 10-36. No Operation (NOP) The “No Operation” command is only able to terminate the Reset Enable (RSTEN) command and will not affect any other command. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care during SPI mode. 10-37. Software Reset (Reset-Enable (RSTEN) and Reset (RST)) The Software Reset operation combines two instructions: Reset-Enable (RSTEN) command and Reset (RST) command. It returns the device to standby mode. All the volatile bits and settings will be cleared then, which makes the device return to the default status as power on. To execute Reset command (RST), the Reset-Enable (RSTEN) command must be executed first to perform the Reset operation. If there is any other command to interrupt after the Reset-Enable command, the Reset-Enable will be invalid. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. If the Reset command is executed during program or erase operation, the operation will be disabled, the data under processing could be damaged or lost. The reset time is different depending on the last operation. For details, please refer to "Table 14. Reset Timing(Other Operation)" for tREADY2. P/N: PM2606 Macronix Proprietary 83 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 81. Software Reset Recovery Stand-by Mode 66 CS# 99 tREADY2 Mode Note: Refer to "Table 14. Reset Timing-(Other Operation)" for tREADY2. Figure 82. Reset Sequence (SPI mode) tSHSL CS# SCLK Mode 3 Mode 3 Mode 0 Mode 0 Command Command 99h 66h SIO0 Figure 83. Reset Sequence (QPI mode) tSHSL CS# MODE 3 MODE 3 MODE 3 SCLK MODE 0 SIO[3:0] P/N: PM2606 Command MODE 0 66h Command MODE 0 99h Macronix Proprietary 84 Rev. 1.2, July 17, 2020 MX25U51245G 54 11. Serial Flash Discoverable Parameter (SFDP) 11-1. Read SFDP Mode (RDSFDP) The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables can be interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on CFI. The sequence of issuing RDSFDP instruction is CS# goes low→send RDSFDP instruction (5Ah)→send 3 address bytes on SI pin→send 1 dummy byte on SI pin→read SFDP code on SO→to end RDSFDP operation can use CS# to high at any time during data out. SFDP is a JEDEC standard, JESD216B. For SFDP register values detail, please contact local Macronix sales channel for Application Note. Figure 84. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command SI SO 24 BIT ADDRESS 23 22 21 5Ah 3 2 1 0 High-Z CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Cycle SI 7 6 5 4 3 2 1 0 DATA OUT 2 DATA OUT 1 SO 7 6 5 4 3 2 0 7 MSB MSB P/N: PM2606 1 Macronix Proprietary 85 6 5 4 3 2 1 0 7 MSB Rev. 1.2, July 17, 2020 MX25U51245G 54 12. RESET Driving the RESET# pin low for a period of tRLRH or longer will reset the device. After reset cycle, the device is at the following states: - Standby mode - All the volatile bits such as WEL/WIP/SRAM lock bit will return to the default status as power on. If the device is under programming or erasing, driving the RESET# pin low will also terminate the operation and data could be lost. During the resetting cycle, the SO data becomes high impedance and the current will be reduced to minimum. Figure 85. RESET Timing CS# tRHSL SCLK tRH tRS RESET# tRLRH tREADY1 / tREADY2 Table 13. Reset Timing-(Power On) Symbol Parameter tRHSL Reset# high before CS# low tRS Reset# setup time tRH Reset# hold time tRLRH Reset# low pulse width tREADY1 Reset Recovery time Min. 10 15 15 10 35 Typ. Max. Unit us ns ns us us Min. 10 15 15 10 40 40 310 12 25 1000 40 Typ. Max. Unit us ns ns us us us us ms ms ms ms Table 14. Reset Timing-(Other Operation) Symbol tRHSL tRS tRH tRLRH Parameter Reset# high before CS# low Reset# setup time Reset# hold time Reset# low pulse width Reset Recovery time (During instruction decoding) Reset Recovery time (for read operation) Reset Recovery time (for program operation) tREADY2 Reset Recovery time(for SE4KB operation) Reset Recovery time (for BE64K/BE32KB operation) Reset Recovery time (for Chip Erase operation) Reset Recovery time (for WRSR operation) P/N: PM2606 Macronix Proprietary 86 Rev. 1.2, July 17, 2020 MX25U51245G 54 13. POWER-ON STATE The device is at below states when power-up: - Standby mode (please note it is not deep power-down mode) - Write Enable Latch (WEL) bit is reset The device must not be selected during power-up and power-down stage unless the VCC achieves below correct level: - VCC minimum at power-up stage and then after a delay of tVSL - GND at power-down Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level. An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change during power up state. When VCC is lower than VWI (POR threshold voltage value), the internal logic is reset and the flash device has no response to any command. For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is not guaranteed. The write, erase, and program command should be sent after the below time delay: - tVSL after VCC reached VCC minimum level The device can accept read command after VCC reached VCC minimum and a time delay of tVSL. Please refer to the "power-up timing". Note: - To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is recommended. (generally around 0.1uF) - At power-down stage, the VCC drops below VWI level, all operations are disable and device has no response to any command. The data corruption might occur during the stage while a write, program, erase cycle is in progress. P/N: PM2606 Macronix Proprietary 87 Rev. 1.2, July 17, 2020 MX25U51245G 54 14. ELECTRICAL SPECIFICATIONS Table 15. ABSOLUTE MAXIMUM RATINGS Rating Value Ambient Operating Temperature Industrial grade -40°C to 85°C Storage Temperature -65°C to 150°C Applied Input Voltage -0.5V to VCC+0.5V Applied Output Voltage -0.5V to VCC+0.5V VCC to Ground Potential -0.5V to 2.5V NOTICE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and functional operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability. 2. Specifications contained within the following tables are subject to change. 3. During voltage transitions, all pins may overshoot to VCC+1.0V or -1.0V for period up to 20ns. Figure 87. Maximum Positive Overshoot Waveform Figure 86. Maximum Negative Overshoot Waveform 20ns 0V VCC+1.0V -1.0V 2.0V 20ns Table 16. CAPACITANCE TA = 25°C, f = 1.0 MHz Symbol Parameter CIN COUT P/N: PM2606 Min. Typ. Max. Unit Input Capacitance 8 pF VIN = 0V Output Capacitance 8 pF VOUT = 0V Macronix Proprietary 88 Conditions Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 88. DATA INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL Input timing reference level 0.8VCC Output timing reference level 0.7VCC AC Measurement Level 0.3VCC 0.2VCC 0.5VCC Note: Input pulse rise and fall time are 2). The number of (n/16) will be round up to next integer. 6. By default dummy cycle value. Please refer to the "Table 1. Read performance Comparison". 7. Latency time is required to complete Erase/Program Suspend operation until WIP bit is "0". 8. For tPRS, minimum timing must be observed before issuing the next program suspend command. However, a period equal to or longer than the typical timing is required in order for the program operation to make progress. 9. For tERS, minimum timing must be observed before issuing the next erase suspend command. However, a period equal to or longer than the typical timing is required in order for the erase operation to make progress. P/N: PM2606 Macronix Proprietary 92 Rev. 1.2, July 17, 2020 MX25U51245G 54 15. OPERATING CONDITIONS At Device Power-Up and Power-Down AC timing illustrated in Figure 91 and Figure 92 are for the supply voltages and the control signals at device powerup and power-down. If the timing in the figures is ignored, the device will not operate correctly. During power-up and power-down, CS# needs to follow the voltage applied on VCC to keep the device not to be selected. The CS# can be driven low when VCC reach Vcc(min.) and wait a period of tVSL. Figure 91. AC Timing at Device Power-Up VCC VCC(min) GND tVR tSHSL CS# tSLCH tCHSL tCHSH tSHCH SCLK tDVCH tCHCL tCHDX LSB IN MSB IN SI High Impedance SO Symbol tVR tCLCH Parameter VCC Rise Time Notes 1 Min. Max. 500000 Unit us/V Notes : 1. Sampled, not 100% tested. 2. For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the figure, please refer to Table 18. AC CHARACTERISTICS. P/N: PM2606 Macronix Proprietary 93 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 92. Power-Down Sequence During power-down, CS# needs to follow the voltage drop on VCC to avoid mis-operation. VCC CS# SCLK Figure 93. Power-up Timing VCC VCC(max) Chip Selection is Not Allowed VCC(min) tVSL Device is fully accessible VWI time P/N: PM2606 Macronix Proprietary 94 Rev. 1.2, July 17, 2020 MX25U51245G 54 Figure 94. Power Up/Down and Voltage Drop When powering down the device, VCC must drop below VPWD for at least tPWD to ensure the device will initialize correctly during power up. Please refer to "Figure 94. Power Up/Down and Voltage Drop" and "Table 19. Power-Up/ Down Voltage and Timing" below for more details. VCC VCC (max.) Chip Select is not allowed VCC (min.) V_keep tVSL VWI Full Device Access Allowed VPWD (max.) tPWD Time Table 19. Power-Up/Down Voltage and Timing Symbol Min. tPWD Parameter VCC voltage needed to below VPWD for ensuring initialization will occur Voltage that a re-initialization is necessary if VDD drop below to VKEEP The minimum duration for ensuring initialization will occur tVSL VPWD V_keep Max. Unit 0.8 V 1.5 V 300 us VCC(min.) to device operation 1500 us VCC VCC Power Supply 1.65 2.0 V VWI Write Inhibit Voltage 1.0 1.5 V Note: These parameters are characterized only. 15-1. INITIAL DELIVERY STATE The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status Register contains 40h (all Status Register bits are 0 except QE bit: QE=1). P/N: PM2606 Macronix Proprietary 95 Rev. 1.2, July 17, 2020 MX25U51245G 54 16. ERASE AND PROGRAMMING PERFORMANCE Parameter Min. Typ. (1) Max. (2) Unit 40 ms Write Status Register Cycle Time Sector Erase Cycle Time (4KB) 25 400 ms Block Erase Cycle Time (32KB) 150 1000 ms Block Erase Cycle Time (64KB) 220 2000 ms Chip Erase Cycle Time 150 300 s Byte Program Time (via page program command) 25 60 us 0.15 0.75 ms Page Program Time Erase/Program Cycle 100,000 cycles Note: 1. Typical program and erase time assumes the following conditions: 25°C, 1.8V, and checkerboard pattern. 2. Under worst conditions of 85°C and minimum operation voltage. 3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming command. 17. DATA RETENTION Parameter Condition Min. Data retention 55˚C 20 Max. Unit years 18. LATCH-UP CHARACTERISTICS Min. Input Voltage with respect to GND on all power pins Max. 1.5 VCCmax Input Current on all non-power pins -100mA +100mA Test conditions: VCC = VCCmax, one pin at a time (compliant to JEDEC JESD78 standard). P/N: PM2606 Macronix Proprietary 96 Rev. 1.2, July 17, 2020 MX25U51245G 54 19. ORDERING INFORMATION Please contact Macronix regional sales for the latest product selection and available form factors. PART NO. Package Temp. MX25U51245GZ4I54 8-WSON (8x6mm, 3.4 x 4.3 EP) MX25U51245GXDI54 24-Ball BGA (5x5 ball array) P/N: PM2606 I/O Configuration H/W Configuration Default I/O Dummy Cycle -40°C to 85°C Permanent 4 I/O 10 (default) Permanent 4 Byte -40°C to 85°C Permanent 4 I/O 10 (default) Permanent 4 Byte Macronix Proprietary 97 Addressing Remark Rev. 1.2, July 17, 2020 MX25U51245G 54 20. PART NAME DESCRIPTION MX 25 U 51245G Z4 I 5 4 Option Code 2: Describes H/W Configuration Option Code 1: Describes I/O Configuration TEMPERATURE RANGE: I: Industrial (-40°C to 85°C) PACKAGE: Z4: 8-WSON (8x6mm, 3.4 x 4.3 EP) XD: 24-Ball BGA (5x5 ball array) DENSITY & MODE: 51245G: 512Mb TYPE: U: 1.8V DEVICE: 25: Serial NOR Flash P/N: PM2606 Macronix Proprietary 98 Rev. 1.2, July 17, 2020 MX25U51245G 54 21. PACKAGE INFORMATION P/N: PM2606 Macronix Proprietary 99 Rev. 1.2, July 17, 2020 MX25U51245G 54 P/N: PM2606 Macronix Proprietary 100 Rev. 1.2, July 17, 2020 MX25U51245G 54 P/N: PM2606 Macronix Proprietary 101 Rev. 1.2, July 17, 2020 MX25U51245G 54 22. REVISION HISTORY Revision June 12, 2018 0.00 August 07, 2018 1.0 May 06, 2019 1.1 July 17, 2020 1.2 P/N: PM2606 Descriptions Page 1. Initial Release. ALL 1. Modified Document title as MX25U51245G 54. 2. Removed "Advanced Information" to align with the product status ALL ALL 1. Added 8-WSON and 16-SOP Resistance (Ohm) of Output Driver Strength Table P22 1. Modified Serial Input Timing (STR mode/DTR mode) 2. Added tDVCL and tCLDX values 3. Corrected "Read Electronic Signature (RES) Sequence" 4. Modified "Program Suspend and Erase Suspend" description 5. Modified "LATCH-UP CHARACTERISTICS" description 6. Added "Support Performance Enhance Mode - XIP (execute-in-place)" 7. Added 75h and 7Ah for PGM/ERS Suspend and PGM/ERS Resume P14 P91 P28,29 P80 P96 P5,52 P18 Macronix Proprietary 102 Rev. 1.2, July 17, 2020 MX25U51245G 54 Except for customized products which have been expressly identified in the applicable agreement, Macronix's products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only, and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property damages. In the event Macronix products are used in contradicted to their target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/ or distributors shall be released from any and all liability arisen therefrom. Copyright© Macronix International Co., Ltd. 2018-2020. All rights reserved, including the trademarks and tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, Nbit, Macronix NBit, HybridNVM, HybridFlash, HybridXFlash, XtraROM, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE, RichBook, Rich TV, OctaBus, FitCAM, ArmorFlash. The names and brands of third party referred thereto (if any) are for identification purposes only. For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice. 103