MX26LV004BQC-55

MX26LV004T/B Macronix NBit TM M emory Family 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY FEATURES • Extended single - supply voltage range 3.0V to 3.6V • 524,288 x 8 • Single power supply operation - 3.0V only operation for read, erase and program operation • Fast access time: 55/70ns • Low power consumption - 30mA maximum active current - 30uA typical standby current • Command register architecture - Byte Programming (55us typical) - Sector Erase (Sector structure 16K-Byte x1, 8K-Byte x2, 32K-Byte x1, and 64K-Byte x7) • Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability. - Automatically program and verify data at specified address • Status Reply - Data# polling & Toggle bit for detection of program and erase operation completion. • Ready/Busy# pin (RY/BY#) - Provides a hardware method of detecting program or erase operation completion. • 2,000 minimum erase/program cycles • Latch-up protected to 100mA from -1V to VCC+1V • Package type: - 40-pin TSOP - 32-pin PLCC • Compatibility with JEDEC standard - Pinout and software compatible with single-power supply Flash • 20 years data retention GENERAL DESCRIPTION The MX26LV004T/B is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile random access memory. The MX26LV004T/B is packaged in 40-pin TSOP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX26LV004T/B offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX26LV004T/B has separate chip enable (CE#) and output enable (OE#) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX26LV004T/B uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. MXIC Flash technology reliably stores memory contents even after 2,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX26LV004T/B uses a 3.0V~3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V. P/N:PM1099 REV. 1.0, NOV. 08, 2004 1 MX26LV004T/B PIN CONFIGURATIONS 40 TSOP (Standard Type) (10mm x 20mm) A16 A15 A14 A13 A12 A11 A9 A8 WE# RESET# NC RY/BY# A18 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A17 GND NC NC A10 Q7 Q6 Q5 Q4 VCC VCC NC Q3 Q2 Q1 Q0 OE# GND CE# A0 MX26LV004T/B 32 PLCC WE# VCC A12 A15 A16 A18 A17 PIN DESCRIPTION SYMBOL PIN NAME A0~A18 A14 A13 A8 A9 9 A7 A6 A5 A4 A3 A2 A1 A0 Q0 5 4 1 32 30 29 Address Input Data Input/Output Chip Enable Input Write Enable Input Hardware Reset Pin Output Enable Input Ready/Busy Output Power Supply Pin (3.0V~3.6V) Ground Pin Q0~Q7 CE# WE# RESET# OE# RY/BY# VCC GND MX26LV004T/B 25 A11 OE# A10 CE# 13 14 Q1 Q2 GND 17 Q3 Q4 Q5 21 20 Q6 Q7 P/N:PM1099 REV. 1.0, NOV. 08, 2004 2 MX26LV004T/B BLOCK STRUCTURE Table 1: MX26LV004T SECTOR ARCHITECTURE Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 Sector Size Byte Mode 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 32Kbytes 8Kbytes 8Kbytes 16Kbytes Address range Byte Mode (x8) 00000-0FFFF 10000-1FFFF 20000-2FFFF 30000-3FFFF 40000-4FFFF 50000-5FFFF 60000-6FFFF 70000-77FFF 78000-79FFF 7A000-7BFFF 7C000-7FFFF A18 A17 0 0 0 0 1 1 1 1 1 1 1 0 0 1 1 0 0 1 1 1 1 1 Sector Address A16 0 1 0 1 0 1 0 1 1 1 1 A15 X X X X X X X 0 1 1 1 A14 X X X X X X X X 0 0 1 A13 X X X X X X X X 0 1 X Table 2: MX26LV004B SECTOR ARCHITECTURE Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 Sector Size Byte Mode 16Kbytes 8Kbytes 8Kbytes 32Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes Address range Byte Mode (x8) 00000-03FFF 04000-05FFF 06000-07FFF 08000-0FFFF 10000-1FFFF 20000-2FFFF 30000-3FFFF 40000-4FFFF 50000-5FFFF 60000-6FFFF 70000-7FFFF A18 A17 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 0 1 1 0 0 1 1 Sector Address A16 0 0 0 0 1 0 1 0 1 0 1 A15 0 0 0 1 X X X X X X X A14 0 1 1 X X X X X X X X A13 X 0 1 X X X X X X X X P/N:PM1099 REV. 1.0, NOV. 08, 2004 3 MX26LV004T/B BLOCK DIAGRAM CE# OE# WE# RESET# CONTROL INPUT LOGIC PROGRAM/ERASE HIGH VOLTAGE WRITE STATE MACHINE (WSM) STATE REGISTER FLASH ARRAY ARRAY SOURCE HV X-DECODER ADDRESS LATCH A0-A18 AND BUFFER Y-PASS GATE COMMAND DATA DECODER Y-DECODER SENSE AMPLIFIER PGM DATA HV COMMAND DATA LATCH PROGRAM DATA LATCH Q0-Q7 I/O BUFFER P/N:PM1099 REV. 1.0, NOV. 08, 2004 4 MX26LV004T/B AUTOMATIC PROGRAMMING The MX26LV004T/B is byte programmable using the Automatic Programming algorithm. The Automatic Programming algorithm makes the external system do not need to have time out sequence nor to verify the data programmed. the device automatically times the erase pulse width, provides the erase verification, and counts the number of sequences. A status bit toggling between consecutive read cycles provides feedback to the user as to the status of the erasing operation. Register contents serve as inputs to an internal statemachine which controls the erase and programming circuitry. During write cycles, the command register internally latches address and data needed for the programming and erase operations. During a system write cycle, addresses are latched on the falling edge, and data are latched on the rising edge of WE# or CE#, whichever happens first. MXIC's Flash technology combines years of EPROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The MX26LV004T/B electrically erases all bits simultaneously using FowlerNordheim tunneling. The bytes are programmed by using the EPROM programming mechanism of hot electron injection. During a program cycle, the state-machine will control the program sequences and command register will not respond to any command set. During a Sector Erase cycle, the command register will only respond to Erase Suspend command. After Erase Suspend is completed, the device stays in read mode. After the state machine has completed its task, it will allow the command register to respond to its full command set. AUTOMATIC PROGRAMMING ALGORITHM MXIC's Automatic Programming algorithm requires the user to only write program set-up commands (including 2 unlock write cycle and A0H) and a program command (program data and address). The device automatically times the programming pulse width, provides the program verification, and counts the number of sequences. A status bit similar to Data# Polling and a status bit toggling between consecutive read cycles, provide feedback to the user as to the status of the programming operation. Refer to write operation status, table 7, for more information on these status bits. AUTOMATIC CHIP ERASE The entire chip is bulk erased using 10 ms erase pulses according to MXIC's Automatic Chip Erase algorithm. The Automatic Erase algorithm automatically programs the entire array prior to electrical erase. The timing and verification of electrical erase are controlled internally within the device. AUTOMATIC SECTOR ERASE The MX26LV004T/B is sector(s) erasable using MXIC's Auto Sector Erase algorithm. The Automatic Sector Erase algorithm automatically programs the specified sector(s) prior to electrical erase. The timing and verification of electrical erase are controlled internally within the device. An erase operation can erase one sector, multiple sectors, or the entire device. AUTOMATIC SELECT The auto select mode provides manufacturer and device identification, through identifier codes output on Q7~Q0. This mode is mainly adapted for programming equipment on the device to be programmed with its programming algorithm. When programming by high voltage method, automatic select mode requires VID (11V to 12V) on address pin A9 and other address pin A6, A1 and A0 as referring to Table 3. In addition, to access the automatic select codes in-system, the host can issue the automatic select command through the command register without requiring VID, as shown in table 4. AUTOMATIC ERASE ALGORITHM MXIC's Automatic Erase algorithm requires the user to write commands to the command register using standard microprocessor write timings. The device will automatically pre-program and verify the entire array. Then P/N:PM1099 REV. 1.0, NOV. 08, 2004 5 MX26LV004T/B TABLE 3. MX26LV004T/B AUTO SELECT MODE OPERATION A18 A12 Description Manufacturer Code Read Silicon ID Device ID (Top Boot Block) Device ID (Bottom Boot Block) NOTE:SA=Sector Address, X=Don't Care, L=Logic Low, H=Logic High L L H X X VID X L X L H B6H CE# OE# WE# L L L L H H | X X | X X VID VID A13 A10 A9 A8 | A7 X X L L A6 A5 | A2 X X L L L H C2H B5H A1 A0 Q7~Q0 P/N:PM1099 REV. 1.0, NOV. 08, 2004 6 MX26LV004T/B COMMAND DEFINITIONS Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. Table 4 defines the valid register command sequences. Note that the Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. TABLE 4. MX26LV004T/B COMMAND DEFINITIONS First Bus Command Bus Cycle Cycle Addr Reset Read Read Silicon ID Program Chip Erase Sector Erase Note: 1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacturer code,A1=0, A0 = 1 for device code. A2-A18=do not care. (Refer to table 3) DDI = Data of Device identifier : C2H for manufacture code, B5/B6 (Top/Bottom Boot) for device code. X = X can be VIL or VIH RA=Address of memory location to be read. RD=Data to be read at location RA. 2. PA = Address of memory location to be programmed. PD = Data to be programmed at location PA. SA = Address of the sector. 3. Address A18-A11 are don't cares for unlock and command cycles. Top Boot Bottom Boot 1 1 4 4 4 6 6 Second Bus Cycle Data Addr Third Bus Cycle Data Addr Fourth Bus Cycle Data Addr Data Fifth Bus Cycle Addr Sixth Bus Cycle Data Addr Data XXXH F0H RA RD 55H 55H 55H 55H 55H 555H 555H 555H 555H 555H 90H ADI 90H ADI A0H PA DDI DDI PD 2AAH 55H 2AAH 55H 555H 10H SA 30H 555H AAH 2AAH 555H AAH 2AAH 555H AAH 2AAH 555H AAH 2AAH 555H AAH 2AAH 80H 555H AAH 80H 555H AAH P/N:PM1099 REV. 1.0, NOV. 08, 2004 7 MX26LV004T/B TABLE 5. MX26LV004T/B BUS OPERATION ADDRESS DESCRIPTION CE# OE# WE# RESET# A18 A12 A9 A13 A10 Read Write Reset Output Disable Standby NOTES: 1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 4. 2. VID is the Silicon-ID-Read high voltage, 11V to 12V. 3. Refer to Table 4 for valid Data-In during a write operation. 4. X can be VIL or VIH. L L X L Vcc±0.3V L H X H X H L X H X H H L H Vcc±0.3V A8 A7 AIN AIN X X X A6 A5 A2 Dout DIN(3) High Z High Z High Z A1 A0 Q0~Q7 P/N:PM1099 REV. 1.0, NOV. 08, 2004 8 MX26LV004T/B REQUIREMENTS FOR READING ARRAY DATA To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid address on the device address inputs produce valid data on the device data outputs. The device remains enabled for read access until the command register contents are altered. current specification for the write mode. The "AC Characteristics" section contains timing specification table and timing diagrams for write operations. STANDBY MODE When using both pins of CE# and RESET#, the device enter CMOS Standby with both pins held at Vcc ± 0.3V. If CE# and RESET# are held at VIH, but not within the range of VCC ± 0.3V, the device will still be in the standby mode, but the standby current will be larger. During Auto Algorithm operation, Vcc active current (Icc2) is required even CE# = "H" until the operation is completed. The device can be read with standard access time (tCE) from either of these standby modes, before it is ready to read data. OUTPUT DISABLE WRITE COMMANDS/COMMAND SEQUENCES To program data to the device or erase sectors of memory , the system must drive WE# and CE# to VIL, and OE# to VIH. The "Byte Program Command Sequence" section has details on programming data to the device. An erase operation can erase one sector, multiple sectors , or the entire device. Table indicates the address space that each sector occupies. A "sector address" consists of the address bits required to uniquely select a sector. The "Writing specific address and data commands or sequences into the command register initiates device operations. Table 1 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. Section has details on erasing a sector or the entire chip, or suspending/resuming the erase operation. After the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on Q7-Q0. Standard read cycle timings apply in this mode. Refer to the Autoselect Mode and Autoselect Command Sequence section for more information. ICC2 in the DC Characteristics table represents the active With the OE# input at a logic high level (VIH), output from the devices are disabled. This will cause the output pins to be in a high impedance state. RESET# OPERATION The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.3V, the device draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS±0.3V, the standby current will be greater. The RESET# pin may be tied to system reset circuitry. A system reset would that also reset the Flash memory, enabling the system to read the boot-up firm-ware from the Flash memory. If RESET# is asserted during a program or erase P/N:PM1099 REV. 1.0, NOV. 08, 2004 9 MX26LV004T/B operation, the RY/BY# pin remains a "0" (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH. Refer to the AC Characteristics tables for RESET# parameters and to Figure 14 for the timing diagram. sector erase command 30H. The Automatic Chip Erase does not require the device to be entirely pre-programmed prior to executing the Automatic Chip Erase. Upon executing the Automatic Chip Erase, the device will automatically program and verify the entire memory for an all-zero data pattern. When the device is automatically verified to contain an all-zero pattern, a self-timed chip erase and verify begin. The erase and verify operations are completed when the data on Q7 is "1" at which time the device returns to the Read mode. The system is not required to provide any control or timing during these operations. When using the Automatic Chip Erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array (no erase verification command is required). If the Erase operation was unsuccessful, the data on Q5 is "1"(see Table 7), indicating the erase operation exceed internal timing limit. The automatic erase begins on the rising edge of the last WE# or CE# pulse, whichever happens first in the command sequence and terminates when the data on Q7 is "1" and the data on Q6 stops toggling for two consecutive read cycles, at which time the device returns to the Read mode. READ/RESET COMMAND The read or reset operation is initiated by writing the read/reset command sequence into the command register. Microprocessor read cycles retrieve array data. The device remains enabled for reads until the command register contents are altered. If program-fail or erase-fail happen, the write of F0H will reset the device to abort the operation. A valid command must then be written to place the device in the desired state. SILICON-ID READ COMMAND Flash memories are intended for use in applications where the local CPU alters memory contents. As such, manufacturer and device codes must be accessible while the device resides in the target system. PROM programmers typically access signature codes by raising A9 to a high voltage (VID). However, multiplexing high voltage onto address lines is not generally desired system design practice. The MX26LV004T/B contains a Silicon-ID-Read operation to supple traditional PROM programming methodology. The operation is initiated by writing the read silicon ID command sequence into the command register. SET-UP AUTOMATIC CHIP/SECTOR ERASE COMMANDS Chip erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the "set-up" command 80H. Two more "unlock" write cycles are then followed by the chip erase command 10H or P/N:PM1099 REV. 1.0, NOV. 08, 2004 10 MX26LV004T/B TABLE 6. SILICON ID CODE Pins Manufacture code Device code for MX26LV004T Device code for MX26LV004B VIH VIL 1 0 1 1 0 1 1 0 B6H A0 VIL VIH A1 VIL VIL Q7 1 1 Q6 1 0 Q5 0 1 Q4 0 1 Q3 0 0 Q2 0 1 Q1 1 0 Q0 0 1 Code(Hex) C2H B5H READING ARRAY DATA The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read array data after completing an Automatic Program or Automatic Erase algorithm. After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erasesuspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See erase Suspend/Erase Resume Commands” for more infor-mation on this mode. The system must issue the reset command to re-enable the device for reading array data if Q5 goes high, or while in the autoselect mode. See the "Reset Command" section, next. RESET COMMAND Writing the reset command to the device resets the device to reading array data. Address bits are don't care for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence be-fore programming begins. This resets the device to reading array data (also applies to programming in Erase Suspend mode). Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an SILICON ID READ command sequence. Once in the SILICON ID READ mode, the reset command must be written to return to reading array data (also applies to SILICON ID READ during Erase Suspend). If Q5 goes high during a program or erase operation, writing the reset command returns the device to read-ing array data (also applies during Erase Suspend). P/N:PM1099 REV. 1.0, NOV. 08, 2004 11 MX26LV004T/B SECTOR ERASE COMMANDS The Automatic Sector Erase does not require the device to be entirely pre-programmed prior to executing the Automatic Sector Erase Set-up command and Automatic Sector Erase command. Upon executing the Automatic Sector Erase command, the device will automatically program and verify the sector(s) memory for an all-zero data pattern. The system is not required to provide any control or timing during these operations. When the sector(s) is automatically verified to contain an all-zero pattern, a self-timed sector erase and verify begin. The erase and verify operations are complete when the data on Q7 is "1" and the data on Q6 stops toggling for two consecutive read cycles, at which time the device returns to the Read mode. The system is not required to provide any control or timing during these operations. When using the Automatic sector Erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array (no erase verification command is required). Sector erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the set-up command 80H. Two more "unlock" write cycles are then followed by the sector erase command 30H. The sector address is latched on the falling edge of WE# or CE#, whichever happens later, while the command (data) is latched on the rising edge of WE# or CE#, whichever happens first. Sector addresses selected are loaded into internal register on the sixth falling edge of WE# or CE#, whichever happens later. Each successive sector load cycle started by the falling edge of WE# or CE#, whichever happens later must begin within 50us from the rising edge of the preceding WE# or CE#, whichever happens first. Otherwise, the loading period ends and internal auto sector erase cycle starts. (Monitor Q3 to determine if the sector erase timer window is still open, see section Q3, Sector Erase Timer.) Any command other than Sector Erase(30H) or Erase Suspend(B0H) during the time-out period resets the device to read mode. followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically generates the program pulses and verifies the programmed cell margin. Table 1 shows the address and data requirements for the byte program command sequence. When the Embedded Program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using Q7, Q6, or RY/BY#. See "Write Operation Status" for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the programming operation. The Byte Program command sequence should be reinitiated once the device has reset to reading array data, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from a "0" back to a "1". Attempting to do so may halt the operation and set Q5 to "1", or cause the Data# Polling algorithm to indicate the operation was successful. However, a succeeding read will show that the data is still "0". Only erase operations can convert a "0" to a "1". WRITE OPERATION STATUS The device provides several bits to determine the status of a write operation: Q2, Q3, Q5, Q6, Q7, and RY/ BY#. Table 7 and the following subsections describe the functions of these bits. Q7, RY/BY#, and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. These three bits are discussed first. Q7: Data# Polling The Data# Polling bit, Q7, indicates to the host system whether an Automatic Algorithm is in progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the program or erase command sequence. BYTE PROGRAM COMMAND SEQUENCE The device programs one byte of data for each program operation. The command sequence requires four bus cycles, and is initiated by writing two unlock write cycles, P/N:PM1099 REV. 1.0, NOV. 08, 2004 12 MX26LV004T/B During the Automatic Program algorithm, the device outputs on Q7 the complement of the datum programmed to Q7. This Q7 status also applies to programming during Erase Suspend. When the Automatic Program algorithm is complete, the device outputs the datum programmed to Q7. The system must provide the program address to read valid status information on Q7. During the Automatic Erase algorithm, Data# Polling produces a "0" on Q7. When the Automatic Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a "1" on Q7. This is analogous to the complement/true datum out-put described for the Automatic Program algorithm: the erase function changes all the bits in a sector to "1" prior to this, the device outputs the "complement," or "0". The system must provide an address within any of the sectors selected for erasure to read valid status information on Q7. When the system detects Q7 has changed from the complement to true data, it can read valid data at Q7-Q0 on the following read cycles. This is because Q7 may change asynchronously with Q0-Q6 while Output Enable (OE#) is asserted low. Bit I may be read at any address, and is valid after the rising edge of the final WE# or CE#, whichever happens first, in the command sequence (prior to the program or erase operation), and during the sector time-out. During an Automatic Program or Erase algorithm operation, successive read cycles to any address cause Q6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is complete, Q6 stops toggling. When the device is actively erasing (that is, the Automatic Erase algorithm is in progress), Q6 toggling. However, the system must also use Q2 to determine which sectors are erasing. Alternatively, the system can use Q7. Q6 stops toggling once the Automatic Program algorithm is complete. Table 7 shows the outputs for Toggle Bit I on Q6. Q2:Toggle Bit II The "Toggle Bit II" on Q2, when used with Q6, indicates whether a particular sector is actively erasing (that is, the Automatic Erase algorithm is in process), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# or CE#, whichever happens first, in the command sequence. Q2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But Q2 cannot distinguish whether the sector is actively erasing or is erase-suspended. Q6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sectors and mode information. Refer to Table 7 to compare outputs for Q2 and Q6. RY/BY#:Ready/Busy The RY/BY# is a dedicated, open-drain output pin that indicates whether an Automatic Erase/Program algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# or CE#, whichever happens first, in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to Vcc. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is ready to read array data (including during the Erase Suspend mode), or is in the standby mode. Table 7 shows the outputs for RY/BY# during write operation. Reading Toggle Bits Q6/ Q2 Whenever the system initially begins reading toggle bit status, it must read Q7-Q0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system Q6:Toggle BIT I Toggle Bit I on Q6 indicates whether an Automatic Program or Erase algorithm is in progress or complete. Toggle P/N:PM1099 REV. 1.0, NOV. 08, 2004 13 MX26LV004T/B would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on Q7-Q0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of Q5 is high (see the section on Q5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as Q5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that system initially determines that the toggle bit is toggling and Q5 has not gone high. The system may continue to monitor the toggle bit and Q5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation. bination of sectors are bad. If this time-out condition occurs during the byte programming operation, it specifies that the entire sector containing that byte is bad and this sector maynot be reused, (other sectors are still functional and can be reused). The time-out condition will not appear if a user tries to program a non blank location without erasing. Please note that this is not a device failure condition since the device was incorrectly used. Q5 Exceeded Timing Limits Q5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under these conditions Q5 will produce a "1". This time-out condition indicates that the program or erase cycle was not successfully completed. Data# Polling and Toggle Bit are the only operating functions of the device under this condition. If this time-out condition occurs during sector erase operation, it specifies that a particular sector is bad and it may not be reused. However, other sectors are still functional and may be used for the program or erase operation. The device must be reset to use other sectors. Write the Reset command sequence to the device, and then execute program or erase command sequence. This allows the system to continue to use the other active sectors in the device. If this time-out condition occurs during the chip erase operation, it specifies that the entire chip is bad or com- P/N:PM1099 REV. 1.0, NOV. 08, 2004 14 MX26LV004T/B Table 7. WRITE OPERATION STATUS Status Q7 (Note1) In Progress Auto Erase Algorithm Exceeded Time Limits Auto Erase Algorithm 0 Toggle 1 1 Byte Program in Auto Program Algorithm 0 Q7# Toggle Toggle 0 1 1 N/A Byte Program in Auto Program Algorithm Q7# Toggle Q6 Q5 (Note2) 0 N/A No Toggle Toggle No Toggle Toggle 0 0 0 0 Q3 Q2 RY/BY# Note: 1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits. See "Q5 : Exceeded Timing Limits" for more information. P/N:PM1099 REV. 1.0, NOV. 08, 2004 15 MX26LV004T/B Q3 Sector Erase Timer After the completion of the initial sector erase command sequence, the sector erase time-out will begin. Q3 will remain low until the time-out is complete. Data# Polling and Toggle Bit are valid after the initial sector erase command sequence. If Data# Polling or the Toggle Bit indicates the device has been written with a valid erase command, Q3 may be used to determine if the sector erase timer window is still open. If Q3 is high ("1") the internally controlled erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is completed as indicated by Data# Polling or Toggle Bit. If Q3 is low ("0"), the device will accept additional sector erase commands. To insure the command has been accepted, the system software should check the status of Q3 prior to and following each subsequent sector erase command. If Q3 were high on the second status check, the command may not have been accepted. POWER SUPPLY DECOUPLING In order to reduce power switching effect, each device should have a 0.1uF ceramic capacitor connected between its VCC and GND. POWER-UP SEQUENCE The MX26LV004T/B powers up in the Read only mode. In addition, the memory contents may only be altered after successful completion of the predefined command sequences. DATA PROTECTION The MX26LV004T/B is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transition. During power up the device automatically resets the state machine in the Read mode. In addition, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific command sequences. The device also incorporates several features to prevent inadvertent write cycles resulting from VCC power-up and power-down transition or system noise. WRITE PULSE "GLITCH" PROTECTION Noise pulses of less than 5ns(typical) on CE# or WE# will not initiate a write cycle. LOGICAL INHIBIT Writing is inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle CE# and WE# must be a logical zero while OE# is a logical one. P/N:PM1099 REV. 1.0, NOV. 08, 2004 16 MX26LV004T/B ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . ..... -65oC to +150oC Ambient Temperature with Power Applied. . . . . . . . . . . . . .... -65oC to +125oC Voltage with Respect to Ground VCC (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to +4.0 V A9, OE#, and RESET# (Note 2) . . . . . . . . . . . . . . . -0.5 V to +12 V All other pins (Note 1) . . . . . . . -0.5 V to VCC +0.5 V Output Short Circuit Current (Note 3) . . . . . . 200 mA Notes: 1. Minimum DC voltage on input or I/O pins is -0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. 2. Minimum DC input voltage on pins A9, OE#, and RESET# is -0.5 V. During voltage transitions, A9, OE#, and RESET# may overshoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC input voltage on pin A9 is +12V which may overshoot to 13.5V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. OPERATING RATINGS Commercial (C) Devices Ambient Temperature (TA ). . . . . . . . . . . . 0° C to +70° C VCC Supply Voltages VCC for full voltage range. . . . . . . . . . . +3.0 V to 3.6 V Operating ranges define those limits between which the functionality of the device is guaranteed. P/N:PM1099 REV. 1.0, NOV. 08, 2004 17 MX26LV004T/B CAPACITANCE TA = 25oC, f = 1.0 MHz SYMBOL CIN1 CIN2 COUT PARAMETER Input Capacitance Control Pin Capacitance Output Capacitance MIN. TYP MAX. 8 12 12 UNIT pF pF pF CONDITIONS VIN = 0V VIN = 0V VOUT = 0V Table 8. DC CHARACTERISTICS TA = 0oC to 70oC, VCC = 3.0V ~ 3.6V Symbol PARAMETER ILI ILIT ILO Input Leakage Current A9 Input Leakage Current Output Leakage Current MIN. TYP MAX. ±1 100 ±1 UNIT uA uA uA CONDITIONS VIN = VSS to VCC VCC=VCC max; A9=12V VOUT = VSS to VCC, VCC = VCC max ICC1 VCC Active Read Current 20 8 ICC2 ICC3 ICC4 VCC Active write Current VCC Standby Current VCC Standby Current During Reset VIL VIH VID Input Low Voltage (Note 1) Input High Voltage Voltage for Automative Select VOL VOH1 VOH2 Output Low Voltage Output High Voltage(TTL) Output High Voltage (CMOS) NOTES: 1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns. VIL min. = -2.0V for pulse width is equal to or less than 20 ns. 2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns If VIH is over the specified maximum value, read operation cannot be guaranteed. 3. Automatic sleep mode enable the low power mode when addresses remain stable for tACC +30ns. 0.85xVCC VCC-0.4 0.45 V IOL = 4.0mA, VCC = VCC min IOH = -2mA, VCC =VCC min IOH = -100uA, VCC min -0.5 0.7xVCC 11 0.8 VCC+ 0.3 12 V V V VCC=3.3V 26 30 30 30 14 30 100 100 mA mA mA uA uA CE#=VIL, OE#=VIH @5MHz @1MHz CE#=VIL, OE#=VIH CE#; RESET#=VCC ± 0.3V RESET#=VSS ± 0.3V P/N:PM1099 REV. 1.0, NOV. 08, 2004 18 MX26LV004T/B AC CHARACTERISTICS TA = 0oC to 70oC, VCC = 3.0V~3.6V Table 9. READ OPERATIONS 26LV004T/B-55 SYMBOL PARAMETER tRC tACC tCE tOE tDF tOEH Read Cycle Time (Note 1) Address to Output Delay CE# to Output Delay OE# to Output Delay OE# High to Output Float (Note1) Output Enable Read Hold Time tOH Toggle and Data# Polling 0 0 10 0 MIN. 55 55 55 25 25 0 0 10 0 MAX. 26LV004T/B-70 MIN. 70 70 70 30 30 MAX. UNIT CONDITIONS ns ns ns ns ns ns ns ns CE#=OE#=VIL CE#=OE#=VIL OE#=VIL CE#=VIL CE#=VIL Address to Output hold TEST CONDITIONS: • Input pulse levels: 0V/3.0V. • Input rise and fall times is equal to or less than 5ns. • Output load: 1 TTL gate + 100pF (Including scope and jig), for 26LV004T/B-70. 1 TTL gate + 30pF (Including scope and jig) for 26LV004T/B-55. • Reference levels for measuring timing: 1.5V. NOTE: 1. Not 100% tested. 2. tDF is defined as the time at which the output achieves the open circuit condition and data is no longer driven. P/N:PM1099 REV. 1.0, NOV. 08, 2004 19 MX26LV004T/B SWITCHING TEST CIRCUITS DEVICE UNDER TEST 2.7K ohm +3.3V CL 6.2K ohm DIODES=IN3064 OR EQUIVALENT CL=100pF Including jig capacitance for MX26LV004T/B-70 (30pF for MX26LV004T/B-55) SWITCHING TEST WAVEFORMS 3.0V INPUT 0V 1.5V TEST POINTS 1.5V OUTPUT AC TESTING: Inputs are driven at 3.0V for a logic "1" and 0V for a logic "0". Input pulse rise and fall times are < 5ns. P/N:PM1099 REV. 1.0, NOV. 08, 2004 20 MX26LV004T/B Figure 1. READ TIMING WAVEFORMS tRC VIH Addresses VIL ADD Valid tACC tCE CE# VIH VIL WE# VIH VIL tOEH VIH tOE tDF OE# VIL tACC tOH Outputs VOH VOL HIGH Z DATA Valid HIGH Z VIH RESET# VIL P/N:PM1099 REV. 1.0, NOV. 08, 2004 21 MX26LV004T/B AC CHARACTERISTICS TA = 0oC to 70oC, VCC = 3.0V~3.6V Table 10. Erase/Program Operations 26LV004T/B-55 SYMBOL tWC tAS tAH tDS tDH tOES tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS tRB tBUSY tBAL PARAMETER Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write (OE# High to WE# Low) CE# Setup Time CE# Hold Time Write Pulse Width Write Pulse Width High Programming Operation (Note 2) Sector Erase Operation (Note 2) VCC Setup Time (Note 1) Recovery Time from RY/BY# Program/Erase Valid to RY/BY# Delay Sector Address Load Time 0 0 35 30 55 (typ.) 2.4 (typ.) 50 0 90 50 0 0 35 30 55 (typ.) 2.4 (typ.) 50 0 90 50 ns ns ns ns us sec us ns ns us MIN. 55 0 45 35 0 0 0 MAX. 26LV004T/B-70 MIN. 70 0 45 35 0 0 0 MAX. UNIT ns ns ns ns ns ns ns NOTES: 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more information. P/N:PM1099 REV. 1.0, NOV. 08, 2004 22 MX26LV004T/B AC CHARACTERISTICS TA = 0oC to 70oC, VCC = 3.0V~3.6V Table 11. Alternate CE# Controlled Erase/Program Operations 26LV004T/B-55 SYMBOL tWC tAS tAH tDS tDH tOES tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2 NOTE: 26LV004T/B-70 MIN. 70 0 45 45 0 0 0 0 0 35 30 55(Typ.) 2.4(Typ.) MAX. UNIT ns ns ns ns ns ns ns ns ns ns ns us sec PARAMETER Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write WE# Setup Time WE# Hold Time CE# Pulse Width CE# Pulse Width High Programming Operation(note2) Sector Erase Operation (note2) MIN. 55 0 45 35 0 0 0 0 0 35 30 55(Typ.) 2.4(Typ.) MAX. 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more information. P/N:PM1099 REV. 1.0, NOV. 08, 2004 23 MX26LV004T/B Figure 2. COMMAND WRITE TIMING WAVEFORM VCC 3V Addresses VIH ADD Valid VIL tAS tAH WE# VIH VIL tOES tWPH tCWC tWP CE# VIH VIL tCS tCH OE# VIH VIL VIH tDS tDH Data VIL DIN P/N:PM1099 REV. 1.0, NOV. 08, 2004 24 MX26LV004T/B AUTOMATIC PROGRAMMING TIMING WAVEFORM One byte data is programmed. Verify in fast algorithm and additional verification by external control are not required because these operations are executed automatically by internal control circuit. Programming completion can be verified by Data# polling and toggle bit checking after automatic programming starts. Device outputs Data# during programming and Data# after programming on Q7.(Q6 is for toggle bit; see toggle bit, Data# polling, timing waveform) Figure 3. AUTOMATIC PROGRAMMING TIMING WAVEFORM Program Command Sequence(last two cycle) tWC tAS Read Status Data (last two cycle) Address 555h PA tAH PA PA CE# tCH tGHWL OE# tWP tWHWH1 WE# tCS tDS tDH tWPH A0h Data PD Status DOUT tBUSY tRB RY/BY# tVCS VCC NOTES: 1.PA=Program Address, PD=Program Data, DOUT is the true data the program address P/N:PM1099 REV. 1.0, NOV. 08, 2004 25 MX26LV004T/B Figure 4. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data A0H Address 555H Write Program Data/Address Increment Address Data# Poll from system No Verify Byte Ok ? YES No Last Address ? YES Auto Program Completed P/N:PM1099 REV. 1.0, NOV. 08, 2004 26 MX26LV004T/B Figure 5. CE# CONTROLLED PROGRAM TIMING WAVEFORM 555 for program 2AA for erase PA for program SA for sector erase 555 for chip erase Data# Polling Address tWC tWH tAS tAH PA WE# tGHEL OE# tCP tWHWH1 or 2 CE# tWS tDS tDH tCPH tBUSY Q7 DOUT Data tRH A0 for program 55 for erase PD for program 30 for sector erase 10 for chip erase RESET# RY/BY# NOTES: 1.PA=Program Address, PD=Program Data, DOUT=Data Out, Q7=complement of data written to device. 2.Figure indicates the last two bus cycles of the command sequence. P/N:PM1099 REV. 1.0, NOV. 08, 2004 27 MX26LV004T/B AUTOMATIC CHIP ERASE TIMING WAVEFORM All data in chip are erased. External erase verification is not required because data is verified automatically by internal control circuit. Erasure completion can be verified by Data# polling and toggle bit checking after automatic erase starts. Device outputs 0 during erasure and 1 after erasure on Q7.(Q6 is for toggle bit; see toggle bit, Data# polling, timing waveform) Figure 6. AUTOMATIC CHIP ERASE TIMING WAVEFORM Erase Command Sequence(last two cycle) tWC tAS Read Status Data Address 2AAh 555h tAH VA VA CE# tCH tGHWL OE# tWP tWHWH2 WE# tCS tDS tDH tWPH 55h Data 10h In Progress Complete tBUSY tRB RY/BY# tVCS VCC NOTES: SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status"). P/N:PM1099 REV. 1.0, NOV. 08, 2004 28 MX26LV004T/B Figure 7. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 80H Address 555H Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 10H Address 555H Data Pall from System NO Data=FFh ? YES Auto Chip Erase Completed P/N:PM1099 REV. 1.0, NOV. 08, 2004 29 MX26LV004T/B AUTOMATIC SECTOR ERASE TIMING WAVEFORM Sector indicated by A12 to A18 are erased. External erase verify is not required because data are verified automatically by internal control circuit. Erasure completion can be verified by Data# polling and toggle bit checking after automatic erase starts. Device outputs 0 during erasure and 1 after erasure on Q7.(Q6 is for toggle bit; see toggle bit, Data# polling, timing waveform) Figure 8. AUTOMATIC SECTOR ERASE TIMING WAVEFORM Erase Command Sequence(last two cycle) tWC tAS Read Status Data Address 2AAh Sector Address 0 tAH Sector Address 1 Sector Address n VA VA CE# tCH tGHWL OE# tBAL tWHWH2 tWP WE# tCS tDS tDH tWPH 55h Data 30h 30h 30h In Progress Complete tBUSY tRB RY/BY# tVCS VCC NOTES: SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status"). P/N:PM1099 REV. 1.0, NOV. 08, 2004 30 MX26LV004T/B Figure 9. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 80H Address 555H Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 30H Sector Address Last Sector to Erase YES Data Poll from System NO Data=FFh NO YES Auto Sector Erase Completed P/N:PM1099 REV. 1.0, NOV. 08, 2004 31 MX26LV004T/B WRITE OPERATION STATUS Figure 10. DATA# POLLING ALGORITHM Start Read Q7~Q0 Add.=VA(1) Q7 = Data ? Yes No No Q5 = 1 ? Yes Read Q7~Q0 Add.=VA Q7 = Data ? (2) No FAIL Yes Pass NOTE : 1.VA=Valid address for programming 2.Q7 should be re-checked even Q5="1" because Q7 may change simultaneously with Q5. P/N:PM1099 REV. 1.0, NOV. 08, 2004 32 MX26LV004T/B Figure 11. TOGGLE BIT ALGORITHM Start Read Q7-Q0 Read Q7-Q0 (Note 1) Toggle Bit Q6 = Toggle ? NO YES NO Q5= 1? YES Read Q7~Q0 Twice (Note 1,2) Toggle bit Q6= Toggle? NO YES Program/Erase Operation Not Complete,Write Reset Command Program/Erase operation Complete Note:1.Read toggle bit twice to determine whether or not it is toggling. 2. Recheck toggle bit because it may stop toggling as Q5 change to "1". P/N:PM1099 REV. 1.0, NOV. 08, 2004 33 MX26LV004T/B Figure 12. DATA# POLLING TIMINGS (During Automatic Algorithms) tRC Address VA tACC tCE VA VA CE# tCH tOE OE# tOEH tDF WE# tOH Q7 Q0-Q6 tBUSY Complement Complement True Valid Data High Z Status Data Status Data True Valid Data High Z RY/BY# NOTES: 1. VA=Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and array data read cycle. 2. CE# must be toggled when Data# Polling. P/N:PM1099 REV. 1.0, NOV. 08, 2004 34 MX26LV004T/B Figure 13. TOGGLE BIT TIMINGS (During Automatic Algorithms) tRC Address VA tACC tCE VA VA VA CE# tCH tOE OE# tOEH tDF WE# tOH Q6/Q2 High Z Valid Status (first raed) Valid Status (second read) Valid Data (stops toggling) Valid Data tBUSY RY/BY# NOTES: 1. VA=Valid address; not required for Q6. Figure shows first two status cycle after command sequence, last status read cycle, and array data read cycle. 2. CE# must be toggled when toggle bit toggling. P/N:PM1099 REV. 1.0, NOV. 08, 2004 35 MX26LV004T/B Table 11. AC CHARACTERISTICS Parameter Std tREADY1 Description RESET# Pin Low (During Automatic Algorithms) to Read or Write (See Note) tREADY2 RESET# Pin Low (NOT During Automatic Algorithms) to Read or Write (See Note) tRP tRH tRB RESET# Pulse Width (During Automatic Algorithms) RESET# High Time Before Read(See Note) RY/BY# Recovery Time(to CE#, OE# go low) MIN MIN MIN 500 50 0 ns ns ns MAX 500 ns Test Setup All Speed Options Unit MAX 20 us Note:Not 100% tested Figure 14. RESET# TIMING WAVEFORM RY/BY# CE#, OE# tRH RESET# tRP tReady2 Reset Timing NOT during Automatic Algorithms tReady1 RY/BY# tRB CE#, OE# RESET# tRP Reset Timing during Automatic Algorithms P/N:PM1099 REV. 1.0, NOV. 08, 2004 36 MX26LV004T/B Figure 15. ID CODE READ TIMING WAVEFORM VCC 3V VID ADD A9 VIH VIL VIH VIL ADD A0 tACC VIH tACC A1 VIL ADD A2-A8 A10-A18 CE# VIH VIL VIH VIL WE# VIH VIL tCE OE# VIH VIL tOE tDF tOH tOH VIH DATA Q0-Q7 DATA OUT VIL DATA OUT B5H/B6H C2H P/N:PM1099 REV. 1.0, NOV. 08, 2004 37 MX26LV004T/B ERASE AND PROGRAMMING PERFORMANCE(1) LIMITS PARAMETER Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time Erase/Program Cycles 2K (6) MIN. TYP.(2) 2.4 20 55 18 MAX.(3) 15 80 220 36 UNITS sec sec us sec Cycles Note: 1. Not 100% tested. 2. Typical program and erase times assume the following conditions : 25° C, 3.3V VCC. Programming spec. assume that all bits are programmed to checkerboard pattern. 3. Maximum values are measured at VCC=3.0V, worst case temperature. Maximum values are up to including 2K program/erase cycles. 4. System-level overhead is the time required to execute the command sequences for the all program command. 5. Excludes 00H programming prior to erasure. (In the pre-programming step of the embedded erase algorithm, all bits are programmed to 00H before erasure) 6. Min. erase/program cycles is under : 3.3V VCC, 25° C, checkerboard pattern conditions, and without baking process. LATCH-UP CHARACTERISTICS MIN. Input Voltage with respect to GND on ACC, OE#, RESET#, A9 Input Voltage with respect to GND on all power pins, Address pins, CE# and WE# Input Voltage with respect to GND on all I/O pins Current Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time. -1.0V -1.0V -1.0V -100mA MAX. 12V VCC + 1.0V VCC + 1.0V +100mA P/N:PM1099 REV. 1.0, NOV. 08, 2004 38 MX26LV004T/B ORDERING INFORMATION PLASTIC PACKAGE PART NO. MX26LV004TTC-55 MX26LV004TTC-70 MX26LV004BTC-55 MX26LV004BTC-70 MX26LV004TQC-55 MX26LV004TQC-70 MX26LV004BQC-55 MX26LV004BQC-70 MX26LV004TTC-55G MX26LV004TTC-70G MX26LV004BTC-55G MX26LV004BTC-70G MX26LV004TQC-55G MX26LV004TQC-70G MX26LV004BQC-55G MX26LV004BQC-70G ACCESS TIME (ns) 55 70 55 70 55 70 55 70 55 70 55 70 55 70 55 70 OPERATING Current MAX. (mA) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 STANDBY Current MAX. (uA) 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 PACKAGE 40 Pin TSOP 40 Pin TSOP 40 Pin TSOP 40 Pin TSOP 32 Pin PLCC 32 Pin PLCC 32 Pin PLCC 32 Pin PLCC 40 Pin TSOP 40 Pin TSOP 40 Pin TSOP 40 Pin TSOP 32 Pin PLCC 32 Pin PLCC 32 Pin PLCC 32 Pin PLCC Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Remark P/N:PM1099 REV. 1.0, NOV. 08, 2004 39 MX26LV004T/B PACKAGE INFORMATION P/N:PM1099 REV. 1.0, NOV. 08, 2004 40 MX26LV004T/B P/N:PM1099 REV. 1.0, NOV. 08, 2004 41 MX26LV004T/B REVISION HISTORY Revision No. Description 1.0 1. Removed "Preliminary" Page P1 Date NOV/08/2004 P/N:PM1099 REV. 1.0, NOV. 08, 2004 42 M X26LV004T/B MACRONIX INTERNATIONAL CO., LTD. Headquarters: TEL:+886-3-578-6688 FAX:+886-3-563-2888 Europe Office : TEL:+32-2-456-8020 FAX:+32-2-456-8021 Hong Kong Office : TEL:+86-755-834-335-79 FAX:+86-755-834-380-78 Japan Office : Kawasaki Office : TEL:+81-44-246-9100 FAX:+81-44-246-9105 Osaka Office : TEL:+81-6-4807-5460 FAX:+81-6-4807-5461 Singapore Office : TEL:+65-6346-5505 FAX:+65-6348-8096 Taipei Office : TEL:+886-2-2509-3300 FAX:+886-2-2509-2200 MACRONIX AMERICA, INC. TEL:+1-408-262-8887 FAX:+1-408-262-8810 http : //www.macronix.com MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.