MX28F160C3TTI-11G

MX28F160C3T/B 16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Bit Organization: 1,048,576 x 16 • Single power supply operation - VCC=VCCQ=2.7~3.6V for read, erase and program operation - VPP=12V for fast production programming - Operating temperature:-40° C~85° C • Fast access time : 70/90/110ns • Low power consumption - 9mA typical active read current, f=5MHz - 18mA typical program current (VPP=1.65~3.6V) - 21mA typical erase current (VPP=1.65~3.6V) - 7uA typical standby current under power saving mode • Sector architecture - Sector structure : 4Kword x 2 (boot sectors), 4Kword x 6 (parameter sectors), 32Kword x 31 (main sectors) - Top/Bottom Boot • Auto Erase and Auto Program - Automatically program and verify data at specified address - Auto sector erase at specified sector • Automatic Suspend Enhance - Word write suspend to read - Sector erase suspend to word write - Sector erase suspend to read register report Automatic sector erase, word write and sector lock/ unlock configuration Status Reply - Detection of program and erase operation completion. - Command User Interface (CUI) - Status Register (SR) Data Protection Performance - Include boot sectors and parameter and main sectors to be locked/unlocked 100,000 minimum erase/program cycles Common Flash Interface (CFI) 128-bit Protection Register - 64-bit Unique Device Identifier - 64-bit User-Programmable Latch-up protected to 100mA from -1V to VCC+1V Package type: - 48-pin TSOP (12mm x 20mm) - 48-ball CSP (8mm x 6mm) • • • • • • • • GENERAL DESCRIPTION The MX28F160C3T/B is a 16-mega bit Flash memory organized as 1M words of 16 bits. The 1M word of data is arranged in eight 4Kword boot and parameter sectors, and thirty-one 32K word main sectors which are individually erasable. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX28F160C3T/B is packaged in 48-pin TSOP and 48-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX28F160C3T/B offers access time as fast as 70ns, allowing operation of high-speed microprocessors without wait states. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX28F160C3T/B uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming P/N:PM0867 REV. 1.2, MAR. 17, 2004 1 MX28F160C3T/B mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX28F160C3T/B uses a 2.7V~3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V. The dedicated VPP pin gives complete data protection when VPP< VPPLK. A Command User Interface (CUI) serves as the interface between the system processor and internal operation of the device. A valid command sequence written to the CUI initiates device automation. An internal Write State Machine (WSM) automatically executes the algorithms and timings necessary for erase, word write and sector lock/unlock configuration operations. A sector erase operation erases one of the device's 32Kword sectors typically within 1.0s, 4K-word sectors typically within 0.5s independent of other sectors. Each sector can be independently erased minimum 100,000 times. Sector erase suspend mode allows system software to suspend sector erase to read or write data from any other sector. Writing memory data is performed in word increments of the device's 32K-word sectors typically within 0.8s and 4K-word sectors typically within 0.1s. Word program suspend mode enables the system to read data or execute code from any other memory array location. MX28F160C3T/B features with individual sectors locking by using a combination of bits thirty-nine sector lockbits and WP, to lock and unlock sectors. The status register indicates when the WSM's sector erase, word program or lock configuration operation is done. The access time is 70/90/110ns (tELQV) over the operating temperature range (-40° C to +85° C) and VCC supply voltage range of 2.7V~3.6V. MX28F160C3T/B's power saving mode feature substantially reduces active current when the device is in static mode (addresses not switching). In this mode, the typical ICCS current is 7uA (CMOS) at 3.0V VCC. As CE and RP are at VCC, ICC CMOS standby mode is enabled. When RP is at GND, the reset mode is enabled which minimize power consumption and provide data write protection. A reset time (tPHQV) is required from RP switching high until outputs are valid. Similarly, the device has a wake time (tPHEL) from RP-high until writes to the CUI are recognized. With RP at GND, the WSM is reset and the status register is cleared. P/N:PM0867 REV. 1.2, MAR. 17, 2004 2 MX28F160C3T/B BLOCK DIAGRAM DQ0-DQ15 Output Buffer Input Buffer I/O Logic VCC Output Multiplexer Identifier Register Data Register CE Command User Interface WE OE RP WP Status Register Data Comparator Write State Machine A0~A19 Input Buffer Y Decoder Y-Gating Program/Erase Voltage Switch VPP VCC GND Main Sector 29 Boot Sector 0 Boot Sector 1 Parameter Sector Parameter Sector Parameter Sector Parameter Sector Parameter Sector Parameter Sector 0 1 2 3 4 5 Main Sector 30 Main Sector 0 Main Sector 1 Address Latch X Decoder 32K-Word Main Sector x31 ....... Address Counter ....... P/N:PM0867 REV. 1.2, MAR. 17, 2004 3 MX28F160C3T/B PIN CONFIGURATIONS 48 TSOP (Standard Type) (12mm x 20mm) A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE RP VPP WP A19 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 VCCQ GND Q15 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC Q11 Q3 Q10 Q2 Q9 Q1 Q8 Q0 OE GND CE A0 MX28F160C3T/B 48 Ball CSP (8mm x 6mm) Top View, Ball Down for MX28F160C3T/BXA (Ball Pitch=0.75mm, Ball Width=0.35mm) A1 A13 B1 A14 C1 A15 D1 A16 E1 VCCQ F1 GND A2 A11 B2 A10 C2 A12 D2 DQ14 E2 DQ15 F2 DQ7 A3 A8 B3 WE C3 A9 D3 DQ5 E3 DQ6 F3 DQ13 A4 VPP B4 RP C4 NC D4 DQ11 E4 DQ12 F4 DQ4 A5 WP B5 A18 C5 NC D5 DQ2 E5 DQ3 F5 VCC A6 A19 B6 A17 C6 A6 D6 DQ8 E6 DQ9 F6 DQ10 A7 A7 B7 A5 C7 A3 D7 CE E7 DQ0 F7 DQ1 A8 A4 B8 A2 C8 A1 6.0 mm D8 A0 E8 GND F8 OE 8.0 mm P/N:PM0867 REV. 1.2, MAR. 17, 2004 4 MX28F160C3T/B Table 1. Pin Description Symbol A0-A19 Type input Description and Function Address inputs for memory address. Data pin float to high-impedance when the chip is deselected or outputs are disable. Addresses are internally latched during a write or erase cycle. Data inputs/outputs: Inputs array data on the second CE and WE cycle during a program command. Data is internally latched. Outputs array and configuration data. The data pin float to tri-state when the chip is de-selected. Chip Enable : Activates the device's control logic, input buffers, and sense amplifiers. CE high de-selects the memory device and reduce power consumption to standby level. CE is active low. Reset/Deep Power Down: when RP=VIL, the device is in reset/deep power down mode, which drives the outputs to High Z, resets the WSM and minimizes current level. When RP=VIH, the device is normal operation. When RP transitions from VIL to VIH, the device defaults to the read array mode. Write Enable: to control write to CUI and array sector. WE=VIL becomes active. The data and addresses are latched on the rising edge of the second WE pulse. Program/Erase Power Supply:(1.65V~3.6V or 11.4V~12.6V) Lower VPP