MX29LV800BXEI-70

PRELIMINARY MX29LV800T/B 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program operation • Fast access time: 70/90ns • Low power consumption - 20mA maximum active current - 0.2uA typical standby current • Command register architecture - Byte/word Programming (9us/11us typical) - Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x15) • Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability. - Automatically program and verify data at specified address • Erase suspend/Erase Resume - Suspends sector erase operation to read data from, or program data to, any sector that is not being erased, then resumes the erase. • Status Reply - Data polling & Toggle bit for detection of program and erase operation completion. • Ready/Busy pin (RY/BY) - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of sectors from program or erase operations - Tempoary sector unprotect allows code changes in previously locked sectors. • 100,000 minimum erase/program cycles • Latch-up protected to 100mA from -1V to VCC+1V • Boot Sector Architecture - T = Top Boot Sector - B = Bottom Boot Sector • Low VCC write inhibit is equal to or less than 2.3V • Package type: - 44-pin SOP - 48-pin TSOP - 48-pin CSP • Compatibility with JEDEC standard - Pinout and software compatible with single-power supply Flash GENERAL DESCRIPTION The MX29LV800T/B is a 8-mega bit Flash memory organized as 1M bytes of 8 bits or 512K words of 16 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29LV800T/B is packaged in 44-pin SOP, 48-pin TSOP, and 48-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX29LV800T/B offers access time as fast as 70ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29LV800T/B has separate chip enable (CE) and output enable (OE) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29LV800T/B uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX29LV800T/B uses a 2.7V~3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V. P/N:PM0709 REV. 1.3, JAN. 24, 2002 1 MX29LV800T/B PIN CONFIGURATIONS 44 SOP(500 mil) RY/BY A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE GND OE Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 RESET WE A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE GND Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC PIN DESCRIPTION SYMBOL A0~A18 Q0~Q14 Q15/A-1 CE WE BYTE RESET OE RY/BY VCC GND PIN NAME Address Input Data Input/Output Q15(Word mode)/LSB addr(Byte mode) Chip Enable Input Write Enable Input Word/Byte Selction input Hardware Reset Pin Output Enable Input Ready/Busy Output Power Supply Pin (2.7V~3.6V) Ground Pin 48 TSOP (Standard Type) (12mm x 20mm) A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE RESET NC NC RY/BY A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE GND Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC Q11 Q3 Q10 Q2 Q9 Q1 Q8 Q0 OE GND CE A0 MX29LV800T/B MX29LV800T/B 48-Ball CSP Ball Pitch = 0.8 mm, Top View, Balls Facing Down (8mm x 9mm x 1.2mm for MX29LV800T/BXB and 6mm x 8mm x 1.3mm for MX29LV800T/BXE) A 6 5 4 3 2 1 A13 A9 WE RY/BY A7 A3 B A12 A8 RESET NC A17 A4 C A14 A10 NC A18 A6 A2 D A15 A11 NC NC A5 A1 E A16 Q7 Q5 Q2 Q0 A0 F BYTE Q14 Q12 Q10 Q8 CE G H Q15/A-1 GND Q13 Vcc Q11 Q9 OE Q6 Q4 Q3 Q1 GND REV. 1.3, JAN. 24, 2002 P/N:PM0709 2 MX29LV800T/B BLOCK STRUCTURE Table 1: MX29LV800T SECTOR ARCHITECTURE Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 Sector Size Byte Mode Word Mode 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 32Kbytes 8Kbytes 8Kbytes 16Kbytes 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 16Kwords 4Kwords 4Kwords 8Kwords Address range Byte Mode (x8) 00000h-0FFFFh 10000h-1FFFFh 20000h-2FFFFh 30000h-3FFFFh 40000h-4FFFFh 50000h-5FFFFh 60000h-6FFFFh 70000h-7FFFFh 80000h-8FFFFh 90000h-9FFFFh A0000h-AFFFFh B0000h-BFFFFh C0000h-CFFFFh D0000h-DFFFFh E0000h-EFFFFh F0000h-F7FFFh F8000h-F9FFFh FA000h-FBFFFh FC000h-FFFFFh Word Mode (x16) 00000h-07FFFh 08000h-0FFFFh 10000h-17FFFh 18000h-1FFFFh 20000h-27FFFh 28000h-2FFFFh 30000h-37FFFh 38000h-3FFFFh 40000h-47FFFh 48000h-4FFFFh 50000h-57FFFh 58000h-5FFFFh 60000h-67FFFh 68000h-6FFFFh 70000h-77FFFh 78000h-7BFFFh 7C000h-7CFFFh 7D000h-7DFFFh 7E000h-7FFFFh 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 1 1 1 Sector Address A18 A17 A16 A15 A14 A13 A12 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 1 1 1 X X X X X X X X X X X X X X X 0 1 1 1 X X X X X X X X X X X X X X X X 0 0 1 X X X X X X X X X X X X X X X X 0 1 X Note: Byte mode:address range A18:A-1, word mode:address range A18:A0. P/N:PM0709 REV. 1.3, JAN. 24, 2002 3 MX29LV800T/B Table 2: MX29LV800B SECTOR ARCHITECTURE Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 Sector Size Byte Mode Word Mode 16Kbytes 8Kbytes 8Kbytes 32Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 8Kwords 4Kwords 4Kwords 16Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords Address range Byte Mode (x8) 00000h-03FFFh 04000h-05FFFh 06000h-07FFFh 08000h-0FFFFh 10000h-1FFFFh 20000h-2FFFFh 30000h-3FFFFh 40000h-4FFFFh 50000h-5FFFFh 60000h-6FFFFh 70000h-7FFFFh 80000h-8FFFFh 90000h-9FFFFh A0000h-AFFFFh B0000h-BFFFFh C0000h-CFFFFh D0000h-DFFFFh E0000h-EFFFFh F0000h-FFFFFh Word Mode (x16) 00000h-01FFFh 02000h-02FFFh 03000h-03FFFh 04000h-07FFFh 08000h-0FFFFh 10000h-17FFFh 18000h-1FFFFh 20000h-27FFFh 28000h-2FFFFh 30000h-37FFFh 38000h-3FFFFh 40000h-47FFFh 48000h-4FFFFh 50000h-57FFFh 58000h-5FFFFh 60000h-67FFFh 68000h-6FFFFh 70000h-77FFFh 78000h-7FFFFh 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 Sector Address A18 A17 A16 A15 A14 A13 A12 0 0 0 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 0 0 1 X X X X X X X X X X X X X X X 0 1 1 X X X X X X X X X X X X X X X X X 0 1 X X X X X X X X X X X X X X X X Note: Byte mode:address range A18:A-1, word mode:address range A18:A0. P/N:PM0709 REV. 1.3, JAN. 24, 2002 4 MX29LV800T/B BLOCK DIAGRAM CE OE WE RESET CONTROL INPUT LOGIC PROGRAM/ERASE HIGH VOLTAGE WRITE STATE MACHINE (WSM) STATE MX29LV800T/B X-DECODER REGISTER ARRAY SOURCE HV ADDRESS LATCH A0-A18 FLASH ARRAY Y-PASS GATE AND BUFFER COMMAND DATA DECODER Y-DECODER SENSE AMPLIFIER PGM DATA HV COMMAND DATA LATCH PROGRAM DATA LATCH Q0-Q15/A-1 I/O BUFFER P/N:PM0709 REV. 1.3, JAN. 24, 2002 5 MX29LV800T/B AUTOMATIC PROGRAMMING The MX29LV800T/B is byte programmable using the Automatic Programming algorithm. The Automatic Programming algorithm makes the external system do not need to have time out sequence nor to verify the data programmed. The typical chip programming time at room temperature of the MX29LV800T/B is less than 10 seconds. AUTOMATIC ERASE ALGORITHM MXIC's Automatic Erase algorithm requires the user to write commands to the command register using standard microprocessor write timings. The device will automatically pre-program and verify the entire array. Then the device automatically times the erase pulse width, provides the erase verification, and counts the number of sequences. A status bit toggling between consecutive read cycles provides feedback to the user as to the status of the erasing operation. Register contents serve as inputs to an internal statemachine which controls the erase and programming circuitry. During write cycles, the command register internally latches address and data needed for the programming and erase operations. During a system write cycle, addresses are latched on the falling edge, and data are latched on the rising edge of WE or CE, whichever happens first. MXIC's Flash technology combines years of EPROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The MX29LV800T/B electrically erases all bits simultaneously using FowlerNordheim tunneling. The bytes are programmed by using the EPROM programming mechanism of hot electron injection. During a program cycle, the state-machine will control the program sequences and command register will not respond to any command set. During a Sector Erase cycle, the command register will only respond to Erase Suspend command. After Erase Suspend is completed, the device stays in read mode. After the state machine has completed its task, it will allow the command register to respond to its full command set. AUTOMATIC PROGRAMMING ALGORITHM MXIC's Automatic Programming algorithm requires the user to only write program set-up commands (including 2 unlock write cycle and A0H) and a program command (program data and address). The device automatically times the programming pulse width, provides the program verification, and counts the number of sequences. The device provides an unlock bypass mode with faster programming. Only two write cycles are needed to program a word or byte, instead of four. A status bit similar to DATA polling and a status bit toggling between consecutive read cycles, provide feedback to the user as to the status of the programming operation. Refer to write operation status, table 7, for more information on these status bits. AUTOMATIC CHIP ERASE The entire chip is bulk erased using 10 ms erase pulses according to MXIC's Automatic Chip Erase algorithm. Typical erasure at room temperature is accomplished in less than 25 second. The Automatic Erase algorithm automatically programs the entire array prior to electrical erase. The timing and verification of electrical erase are controlled internally within the device. AUTOMATIC SELECT AUTOMATIC SECTOR ERASE The MX29LV800T/B is sector(s) erasable using MXIC's Auto Sector Erase algorithm. The Automatic Sector Erase algorithm automatically programs the specified sector(s) prior to electrical erase. The timing and verification of electrical erase are controlled internally within the device. An erase operation can erase one sector, multiple sectors, or the entire device. The auto select mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on Q7~Q0. This mode is mainly adapted for programming equipment on the device to be programmed with its programming algorithm. When programming by high voltage method, automatic select mode requires VID (11.5V to 12.5V) on address pin A9 and other address pin A6, A1 and A0 as referring to Table 3. In addition, to access the automatic select codes in-system, the host can issue the automatic se- P/N:PM0709 REV. 1.3, JAN. 24, 2002 6 MX29LV800T/B lect command through the command register without requiring VID, as shown in table4. To verify whether or not sector being protected, the sector address must appear on the appropriate highest order address bit (see Table 1 and Table 2). The rest of address bits, as shown in table3, are don't care. Once all necessary bits have been set as required, the programming equipment may read the corresponding identifier code on Q7~Q0. TABLE 3. MX29LV800T/B AUTO SELECT MODE OPERATION A18 Description Mode CE OE WE | A12 Read Silicon ID Manfacturer Code Read Silicon ID (Top Boot Block) Device ID Word Byte Word L L L L L L L L H H H H X X X X X X X X VID VID VID VID X X X X L L L L X X X X L L L L H H H H 22DAH XXDAH 225BH XX5BH XX01H Sector Protection Verification L L H SA X VID X L X H L (protected) XX00H (unprotected) L L H X A11 | A10 X VID A9 A8 | A7 X L A6 A5 | A2 X L L C2H A1 A0 Q15~Q0 (Bottom Boot Block) Byte NOTE:SA=Sector Address, X=Don't Care, L=Logic Low, H=Logic High P/N:PM0709 REV. 1.3, JAN. 24, 2002 7 MX29LV800T/B TABLE 4. MX29LV800T/B COMMAND DEFINITIONS Command Bus First Bus Cycle Second Bus Cycle Third Bus Cycle Fourth Bus Cycle Data Fifth Bus Cycle Addr Sixth Bus Cycle Data Addr Data Cycle Addr Reset Read Read Silicon ID Word Byte Sector Protect Verify Byte 4 Word 1 1 4 4 4 Data Addr Data Addr Data Addr XXXH F0H RA RD 55H 55H 55H 555H AAAH 555H 90H ADI 90H ADI 90H (SA) x02H AAAH AAH 555H 55H AAAH 90H (SA) x04H DDI DDI XX00H XX01H 00H 01H PD PD 2AAH 55H 555H 55H 2AAH 55H 555H 55H 555H 10H AAAH 10H SA SA 30H 30H 555H AAH 2AAH AAAH AAH 555H 555H AAH 2AAH Porgram Word Byte 4 4 6 6 6 6 1 1 555H AAH 2AAH AAAH AAH 555H 555H AAH 2AAH AAAH AAH 555H 555H AAH 2AAH AAAH AAH 555H XXXH B0H XXXH 30H 55H 55H 55H 55H 55H 55H 555H AAAH 555H AAAH 555H AAAH A0H PA A0H PA Chip Erase Word Byte 80H 555H AAH 80H AAAH AAH 80H 555H AAH 80H AAAH AAH Sector Erase Word Byte Sector Erase Suspend Sector Erase Resume Note: 1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacturer code,A1=0, A0 = 1 for device code. A2-A18=do not care. (Refer to table 3) DDI = Data of Device identifier : C2H for manufacture code, 22DA/DA(Top), and 225B/5B(Bottom) for device code. X = X can be VIL or VIH RA=Address of memory location to be read. RD=Data to be read at location RA. 2.PA = Address of memory location to be programmed. PD = Data to be programmed at location PA. SA = Address of the sector to be erased. 3.The system should generate the following address patterns: 555H or 2AAH to Address A10~A0 in word mode/AAAH or 555H to Address A10~A-1 in byte mode. Address bit A11~A18=X=Don't care for all address commands except for Program Address (PA) and Sector Address (SA). Write Sequence may be initiated with A11~A18 in either state. 4. For Sector Protect Verify operation:If read out data is 01H, it means the sector has been protected. If read out data is 00H, it means the sector is still not being protected. P/N:PM0709 REV. 1.3, JAN. 24, 2002 8 MX29LV800T/B COMMAND DEFINITIONS Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. Table 4 defines the valid register command TABLE 5. MX29LV800T/B BUS OPERATION ADDRESS DESCRIPTION CE OE WE A18 A10 A9 A8 A12 A11 Read L L H A7 AIN A6 A5 A1 A2 Dout A0 Q0~Q7 Q8~Q15 BYTE =VIH Dout BYTE =VIL =High Z DQ15=A-1 Write Reset Temproary sector unlock Output Disable Standby Sector Protect Sector Unprotect Sector Protection Verify L X X L Vcc ± 0.3V L L L H X X H X H H L L X X H X L L H SA X SA X X X X AIN X AIN X X X X L H L X X X H H H L L L DIN(3) High Z DIN High Z High Z DIN DIN CODE(5) DIN High Z DIN High Z High Z X X X High Z High Z High Z High Z X X X sequences. Note that the Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. X VID X NOTES: 1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 4. 2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V. 3. Refer to Table 4 for valid Data-In during a write operation. 4. X can be VIL or VIH. 5. Code=00H/XX00H means unprotected. Code=01H/XX01H means protected. 6. A18~A12=Sector address for sector protect. 7.The sector protect and chip unprotect functions may also be implemented via programming equipment. P/N:PM0709 REV. 1.3, JAN. 24, 2002 9 MX29LV800T/B REQUIREMENTS FOR READING ARRAY DATA To read array data from the outputs, the system must drive the CE and OE pins to VIL. CE is the power control and selects the device. OE is the output control and gates array data to the output pins. WE should remain at VIH. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory contect occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid address on the device address inputs produce valid data on the device data outputs. The device remains enabled for read access until the command register contents are altered. Refer to the Autoselect Mode and Autoselect Command Sequence section for more information. ICC2 in the DC Characteristics table represents the active current specification for the write mode. The "AC Characteristics" section contains timing specification table and timing diagrams for write operations. STANDBY MODE When using both pins of CE and RESET, the device enter CMOS Standby with both pins held at Vcc ± 0.3V. IF CE and RESET are held at VIH, but not within the range of VCC ± 0.3V, the device will still be in the standby mode, but the standby current will be larger. During Auto Algorithm operation, Vcc active current (Icc2) is required even CE = "H" until the operation is complated. The device can be read with standard access time (tCE) from either of these standby modes, before it is ready to read data. WRITE COMMANDS/COMMAND SEQUENCES To program data to the device or erase sectors of memory , the sysytem must drive WE and CE to VIL, and OE to VIH. The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to program a byte, instead of four. The "byte Program Command Sequence" section has details on programming data to the device using both standard and Unlock Bypass command sequences. An erase operation can erase one sector, multiple sectors , or the entire device. Table indicates the address space that each sector occupies. A "sector address" consists of the address bits required to uniquely select a sector. The "Writing specific address and data commands or sequences into the command register initiates device operations. Table 1 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data."section has details on erasing a sector or the entire chip, or suspending/resuming the erase operation. After the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal reqister (which is separate from the memory array) on Q7-Q0. Standard read cycle timings apply in this mode. P/N:PM0709 OUTPUT DISABLE With the OE input at a logic high level (VIH), output from the devices are disabled. This will cause the output pins to be in a high impedance state. RESET OPERATION The RESET pin provides a hardware method of resetting the device to reading array data. When the RESET pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET pluse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitated once the device is ready to accept another command sequence, to ensure data integrity Current is reduced for the duration of the RESET pulse. When RESET is held at VSS±0.3V, the device draws CMOS standby current (ICC4). If RESET is held at VIL but not within VSS±0.3V, the standby current will be greater. The RESET pin may be tied to system reset circuitry. A system reset would that also reset the Flash memory, enabling the system to read the boot-up firm-ware from REV. 1.3, JAN. 24, 2002 10 MX29LV800T/B the Flash memory. If RESET is asserted during a program or erase operation, the RY/BY pin remains a "0" (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The sysytem can thus monitor RY/BY to determine whether the reset operation is complete. If RESET is asserted when a program or erase operation is commpleted within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET pin returns to VIH. Refer to the AC Characteristics tables for RESET parameters and to Figure 22 for the timing diagram. SET-UP AUTOMATIC CHIP/SECTOR ERASE COMMANDS Chip erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the "set-up" command 80H. Two more "unlock" write cycles are then followed by the chip erase command 10H or sector erase command 30H. The Automatic Chip Erase does not require the device to be entirely pre-programmed prior to executing the Automatic Chip Erase. Upon executing the Automatic Chip Erase, the device will automatically program and verify the entire memory for an all-zero data pattern. When the device is automatically verified to contain an all-zero pattern, a self-timed chip erase and verify begin. The erase and verify operations are completed when the data on Q7 is "1" at which time the device returns to the Read mode. The system is not required to provide any control or timing during these operations. When using the Automatic Chip Erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array(no erase verification command is required). If the Erase operation was unsuccessful, the data on Q5 is "1"(see Table 7), indicating the erase operation exceed internal timing limit. The automatic erase begins on the rising edge of the last WE or CE pulse, whichever happens first in the command sequence and terminates when the data on Q7 is "1" at which time the device returns to the Read mode, or the data on Q6 stops toggling for two consecutive read cycles at which time the device returns to the Read mode. READ/RESET COMMAND The read or reset operation is initiated by writing the read/reset command sequence into the command register. Microprocessor read cycles retrieve array data. The device remains enabled for reads until the command register contents are altered. If program-fail or erase-fail happen, the write of F0H will reset the device to abort the operation. A valid command must then be written to place the device in the desired state. SILICON-ID READ COMMAND Flash memories are intended for use in applications where the local CPU alters memory contents. As such, manufacturer and device codes must be accessible while the device resides in the target system. PROM programmers typically access signature codes by raising A9 to a high voltage(VID). However, multiplexing high voltage onto address lines is not generally desired system design practice. The MX29LV800T/B contains a Silicon-ID-Read operation to supple traditional PROM programming methodology. The operation is initiated by writing the read silicon ID command sequence into the command register. Following the command write, a read cycle with A1=VIL, A0=VIL retrieves the manufacturer code of C2H/00C2H. A read cycle with A1=VIL, A0=VIH returns the device code of DAH/22DAH for MX29LV800T, 5BH/225BH for MX29LV800B. P/N:PM0709 REV. 1.3, JAN. 24, 2002 11 MX29LV800T/B TABLE 6. SILICON ID CODE Pins Manufacture code Device code for MX29LV800T Device code for MX29LV800B Sector Protection Verification Word Byte Word Byte Word Byte Word Byte A0 VIL VIL VIH VIH VIH VIH X X A1 VIL VIL VIL VIL VIL VIL VIH VIH Q15~Q8 Q7 00H X 22H X 22H X X X 1 1 1 1 0 0 0 0 Q6 1 1 1 1 1 1 0 0 Q5 0 0 0 0 0 0 0 0 Q4 0 0 1 1 1 1 0 0 Q3 0 0 1 1 1 1 0 0 Q2 Q1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 0 0 Q0 0 0 0 0 1 1 1 0 Code(Hex) 00C2H C2H 22DAH DAH 225BH 5BH 01H (Protected) 00H (Unprotected) READING ARRAY DATA The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read array data after completing an Automatic Program or Automatic Erase algorithm. After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erasesuspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See rase Suspend/Erase Resume Commands” for more infor-mation on this mode. The system must issue the reset command to re-enable the device for reading array data if Q5 goes high, or while in the autoselect mode. See the "Reset Command" section, next. RESET COMMAND Writing the reset command to the device resets the device to reading array data. Address bits are don't care for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence be-fore programming begins. This resets the device to reading array data (also applies to programming in Erase Suspend mode). Once programming begins,however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an SILICON ID READ command sequence. Once in the SILICON ID READ mode, the reset command must be written to return to reading array data (also applies to SILICON ID READ during Erase Suspend). If Q5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during Erase Suspend). P/N:PM0709 REV. 1.3, JAN. 24, 2002 12 MX29LV800T/B SECTOR ERASE COMMANDS The Automatic Sector Erase does not require the device to be entirely pre-programmed prior to executing the Automatic Sector Erase Set-up command and Automatic Sector Erase command. Upon executing the Automatic Sector Erase command, the device will automatically program and verify the sector(s) memory for an all-zero data pattern. The system is not required to provide any control or timing during these operations. When the sector(s) is automatically verified to contain an all-zero pattern, a self-timed sector erase and verify begin. The erase and verify operations are complete when either the data on Q7 is "1" at which time the device returns to the Read mode, or the data on Q6 stops toggling for two consecutive read cycles at which time the device returns to the Read mode. The system is not required to provide any control or timing during these operations. When using the Automatic sector Erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array (no erase verification command is required). Sector erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the set-up command 80H. Two more "unlock" write cycles are then followed by the sector erase command 30H. The sector address is latched on the falling edge of WE or CE, whichever happens later, while the command(data) is latched on the rising edge of WE or CE, whichever happens first. Sector addresses selected are loaded into internal register on the sixth falling edge of WE or CE, whichever happens later. Each successive sector load cycle started by the falling edge of WE or CE, whichever happens later must begin within 50us from the rising edge of the preceding WE or CE, whichever happens first. Otherwise, the loading period ends and internal auto sector erase cycle starts. (Monitor Q3 to determine if the sector erase timer window is still open, see section Q3, Sector Erase Timer.) Any command other than Sector Erase(30H) or Erase Suspend(B0H) during the time-out period resets the device to read mode. mand is issued during the sector erase operation, the device requires a maximum 20us to suspend the sector erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After this command has been executed, the command register will initiate erase suspend mode. The state machine will return to read mode automatically after suspend is ready. At this time, state machine only allows the command register to respond to Erase Resume, program data to , or read data from any sector not selected for erasure. The system can determine the status of the program operation using the Q7 or Q6 status bits, just as in the standard program operation. After an erase-suspend program operation is complete, the system can once again read array data within non-suspended sectors. ERASE RESUME This command will cause the command register to clear the suspend state and return back to Sector Erase mode but only if an Erase Suspend command was previously issued. Erase Resume will not have any effect in all other conditions. Another Erase Suspend command can be written after the chip has resumed erasing. WORD/BYTE PROGRAM COMMAND SEQUENCE The device programs one byte of data for each program operation. The command sequence requires four bus cycles, and is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically generates the program pulses and verifies the programmed cell margin. Table 1 shows the address and data requirements for the byte program command sequence. When the Embedded Program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using Q7, Q6, or RY/BY. See "Write Operation Status" for information on these status bits. Any commands written to the device during the Em- ERASE SUSPEND This command only has meaning while the state machine is executing Automatic Sector Erase operation, and therefore will only be responded during Automatic Sector Erase operation. When the Erase Suspend Com- P/N:PM0709 REV. 1.3, JAN. 24, 2002 13 MX29LV800T/B bedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the programming operat ion. The Byte Program command sequence should be reinitiated once the device has reset to reading array data, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from a "0" back to a "1". Attempting to do so may halt the operation and set Q5 to "1" ,” or cause the Data Polling algorithm to indicate the operation was successful. However, a succeeding read will show that the data is still "0". Only erase operations can convert a "0" to a "1". this, the device outputs the "complement,” or "0".” The system must provide an address within any of the sectors selected for erasure to read valid status information on Q7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data Polling on Q7 is active for approximately 100 us, then the device returns to reading array data. If not all selected sectors are protected, the Automatic Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. When the system detects Q7 has changed from the complement to true data, it can read valid data at Q7-Q0 on the following read cycles. This is because Q7 may change asynchr onously with Q0-Q6 while Output Enable (OE) is asserted low. WRITE OPERSTION STATUS The device provides several bits to determine the status of a write operation: Q2, Q3, Q5, Q6, Q7, and RY/ BY. Table 10 and the following subsections describe the functions of these bits. Q7, RY/BY, and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. These three bits are discussed first. RY/BY:Ready/Busy The RY/BY is a dedicated, open-drain output pin that indicates whether an Automatic Erase/Program algorithm is in progress or complete. The RY/BY status is valid after the rising edge of the final WE or CE, whichever happens first, in the command sequence. Since RY/BY is an open-drain output, several RY/BY pins can be tied together in parallel with a pull-up resistor to Vcc. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.)If the output is high (Ready), the device is ready to read array data (including during the Erase Suspend mode), or is in the standby mode. Table 7 shows the outputs for RY/BY during write operation. Q7: Data Polling The Data Polling bit, Q7, indicates to the host sys-tem whether an Automatic Algorithm is in progress or completed, or whether the device is in Erase Suspend. Data Polling is valid after the rising edge of the final WE pulse in the program or erase command sequence. During the Automatic Program algorithm, the device outputs on Q7 the complement of the datum programmed to Q7. This Q7 status also applies to programming during Er ase Suspend. When the Automatic Program algorithm is complete, the device outputs the datum programmed to Q7. The system must provide the program address to read valid status information on Q7. If a program address falls within a protected sector, Data Polling on Q7 is active for approximately 1 us, then the device returns to reading array data. During the Automatic Erase algorithm, Data Polling produces a "0" on Q7. When the Automatic Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data Polling produces a "1" on Q7. This is analogous to the complement/true datum out-put described for the Automatic Program algorithm: the erase function changes all the bits in a sector to "1" prior to P/N:PM0709 Q6:Toggle BIT I Toggle Bit I on Q6 indicates whether an Automatic Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE or CE, whichever happens first, in the command sequence(prior to the program or erase operation), and during the sector time- REV. 1.3, JAN. 24, 2002 14 MX29LV800T/B During an Automatic Program or Erase algorithm operation, successive read cycles to any address cause Q6 to toggle. The system may use either OE or CE to control the read cycles. When the operation is complete, Q6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, Q6 toggles and returns to reading array data. If not all selected sectors are protected, the Automatic Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use Q6 and Q2 together to determine whether a sector is actively erasing or is erase suspended. When the device is actively erasing (that is, the Automatic Erase algorithm is in progress), Q6 toggling. When the device enters the Erase Suspend mode, Q6 stops toggling. However, the system must also use Q2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use Q7. If a program address falls within a protected sector, Q6 toggles for approximately 2 us after the program command sequence is written, then returns to reading array data. Q6 also toggles during the erase-suspend-program mode, and stops toggling once the Automatic Program algorithm is complete. Table 7 shows the outputs for Toggle Bit I on Q6. are required for sectors and mode information. Refer to Table 7 to compare outputs for Q2 and Q6. Reading Toggle Bits Q6/ Q2 Whenever the system initially begins reading toggle bit status, it must read Q7-Q0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on Q7-Q0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of Q5 is high (see the section on Q5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as Q5 went high. If the toggle bit is no longer toggling, the device has successfuly completed the program or erase operation. If it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that system initially determines that the toggle bit is toggling and Q5 has not gone high. The system may continue to monitor the toggle bit and Q5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation. Q2:Toggle Bit II The "Toggle Bit II" on Q2, when used with Q6, indicates whether a particular sector is actively eraseing (that is, the Automatic Erase alorithm is in process), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE or CE, whichever happens first, in the command sequence. Q2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE or CE to control the read cycles.) But Q2 cannot distinguish whether the sector is actively erasing or is erase-suspended. Q6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits Q5 Exceeded Timing Limits Q5 will indicate if the program or erase time has exceeded the specified limits(internal pulse count). Under these conditions Q5 will produce a "1". This time-out condition indicates that the program or erase cycle was not successfully completed. Data Polling and Toggle Bit are the only operating functions of the device under this condition. P/N:PM0709 REV. 1.3, JAN. 24, 2002 15 MX29LV800T/B If this time-out condition occurs during sector erase operation, it specifies that a particular sector is bad and it may not be reused. However, other sectors are still functional and may be used for the program or erase operation. The device must be reset to use other sectors. Write the Reset command sequence to the device, and then execute program or erase command sequence. This allows the system to continue to use the other active sectors in the device. If this time-out condition occurs during the chip erase operation, it specifies that the entire chip is bad or combination of sectors are bad. If this time-out condition occurs during the byte programming operation, it specifies that the entire sector containing that byte is bad and this sector maynot be reused, (other sectors are still functional and can be reused). The time-out condition will not appear if a user tries to program a non blank location without erasing. Please note that this is not a device failure condition since the device was incorrectly used. Table 7. WRITE OPERATION STATUS Status Byte Program in Auto Program Algorithm Auto Erase Algorithm Erase Suspend Read (Erase Suspended Sector) In Progress Erase Suspended Mode Erase Suspend Read (Non-Erase Suspended Sector) Erase Suspend Program Byte Program in Auto Program Algorithm Exceeded Time Limits Auto Erase Algorithm Erase Suspend Program Data Q7 Q7 0 Q7 Data Toggle Toggle Toggle Toggle Data Data Data 0 1 1 1 N/A N/A 1 N/A N/A No Toggle Toggle N/A 1 0 0 0 0 Q7 (Note1) Q7 0 1 Q6 Toggle Toggle No Toggle Q5 Q3 (Note2) 0 0 0 N/A 1 Q2 No Toggle Toggle RY/BY 0 0 1 N/A Toggle Note: 1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits. See "Q5:Exceeded Timing Limits " for more information. P/N:PM0709 REV. 1.3, JAN. 24, 2002 16 MX29LV800T/B Q3 Sector Erase Timer After the completion of the initial sector erase command sequence, the sector erase time-out will begin. Q3 will remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial sector erase command sequence. If Data Polling or the Toggle Bit indicates the device has been written with a valid erase command, Q3 may be used to determine if the sector erase timer window is still open. If Q3 is high ("1") the internally controlled erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is completed as indicated by Data Polling or Toggle Bit. If Q3 is low ("0"), the device will accept additional sector erase commands. To insure the command has been accepted, the system software should check the status of Q3 prior to and following each subsequent sector erase command. If Q3 were high on the second status check, the command may not have been accepted. POWER SUPPLY DECOUPLING In order to reduce power switching effect, each device should have a 0.1uF ceramic capacitor connected between its VCC and GND. POWER-UP SEQUENCE The MX29LV800T/B powers up in the Read only mode. In addition, the memory contents may only be altered after successful completion of the predefined command sequences. TEMPORARY SECTOR UNPROTECT This feature allows temporary unprotection of previously protected sector to change data in-system. The Temporary Sector Unprotect mode is activated by setting the RESET pin to VID(11.5V-12.5V). During this mode, formerly protected sectors can be programmed or erased as un-protected sector. Once VID is remove from the RESET pin,all the previously protected sectors are protected again. DATA PROTECTION The MX29LV800T/B is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transition. During power up the device automatically resets the state machine in the Read mode. In addition, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific command sequences. The device also incorporates several features to prevent inadvertent write cycles resulting from VCC power-up and power-down transition or system noise. SECTOR PROTECTION The MX29LV800T/B features hardware sector protection. This feature will disable both program and erase operations for these sectors protected. To activate this mode, the programming equipment must force VID on address pin A9 and OE (suggest VID = 12V). Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated on the rising edge. Please refer to sector protect algorithm and waveform. To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9 ( with CE and OE at VIL and WE at VIH). When A1=VIH, A0=VIL, A6=VIL, it will produce a logical "1" code at device output Q0 for a protected sector. Otherwise the device will produce 00H for the unprotected sector. In this mode, the addresses,except for A1, are don't care. Address locations with A1 = VIL are reserved to read manufacturer and device codes.(Read Silicon ID) It is also possible to determine if the sector is protected in the system by writing a Read Silicon ID command. Performing a read operation with A1=VIH, it will produce a logical "1" at Q0 for the protected sector. REV. 1.3, JAN. 24, 2002 WRITE PULSE "GLITCH" PROTECTION Noise pulses of less than 5ns(typical) on CE or WE will not initiate a write cycle. LOGICAL INHIBIT Writing is inhibited by holding any one of OE = VIL, CE = VIH or WE = VIH. To initiate a write cycle CE and WE must be a logical zero while OE is a logical one. P/N:PM0709 17 MX29LV800T/B CHIP UNPROTECT The MX29LV800T/B also features the chip unprotect mode, so that all sectors are unprotected after chip unprotect is completed to incorporate any changes in the code. It is recommended to protect all sectors before activating chip unprotect mode. To activate this mode, the programming equipment must force VID on control pin OE and address pin A9. The CE pins must be set at VIL. Pins A6 must be set to VIH. Refer to chip unprotect algorithm and waveform for the chip unprotect algorithm. The unprotection mechanism begins on the falling edge of the WE pulse and is terminated on the rising edge. It is also possible to determine if the chip is unprotected in the system by writing the Read Silicon ID command. Performing a read operation with A1=VIH, it will produce 00H at data outputs(Q0-Q7) for an unprotected sector. It is noted that all sectors are unprotected after the chip unprotect algorithm is completed. P/N:PM0709 REV. 1.3, JAN. 24, 2002 18 MX29LV800T/B ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . ..... -65oC to +150oC Ambient Temperature with Power Applied. . . . . . . . . . . . . .... -65oC to +125oC Voltage with Respect to Ground VCC (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to +4.0 V A9, OE, and RESET (Note 2) . . . . . . . . . . . ....-0.5 V to +12.5 V All other pins (Note 1) . . . . . . . -0.5 V to VCC +0.5 V Output Short Circuit Current (Note 3) . . . . . . 200 mA Notes: 1. Minimum DC voltage on input or I/O pins is -0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to -2.0 V for periods of up to 20 ns. See Figure 6. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. 2. Minimum DC input voltage on pins A9, OE, and RESET is -0.5 V. During voltage transitions, A9, OE, and RESET may overshoot VSS to -2.0 V for periods of up to 20 ns. See Figure 6. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to 14.0 V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. Stresses above those listed under "Absolute Maximum Rat-ings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. OPERATING RATINGS Commercial (C) Devices C Ambient Temperature (TA ). . . . . . . . . . . . 0°C to +70° Industrial (I) Devices Ambient Temperature (TA ). . . . . . . . . . -40° to +85°C C VCC Supply Voltages VCC for regulated voltage range . . . . . +3.0 V to 3.6 V VCC for full voltage range. . . . . . . . . . . +2.7 V to 3.6 V Operating ranges define those limits between which the functionality of the device is guaranteed. P/N:PM0709 REV. 1.3, JAN. 24, 2002 19 MX29LV800T/B CAPACITANCE TA = 25oC, f = 1.0 MHz SYMBOL CIN1 CIN2 COUT PARAMETER Input Capacitance Control Pin Capacitance Output Capacitance MIN. TYP MAX. 8 12 12 UNIT pF pF pF CONDITIONS VIN = 0V VIN = 0V VOUT = 0V READ OPERATION Table 8. DC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V Symbol ILI ILIT ILO ICC1 PARAMETER Input Leakage Current A9 Input Leakage Current Output Leakage Current VCC Active Read Current 7 2 7 2 ICC2 ICC3 ICC4 VCC Active write Current VCC Standby Current VCC Standby Current During Reset ICC5 VIL VIH VID Automative sleep mode Input Low Voltage(Note 1) Input High Voltage Voltage for Automative Select and Temporary Sector Unprotect VOL VOH1 VOH2 Output Low Voltage Output High Voltage(TTL) Output High Voltage (CMOS) VLKO Low VCC Lock-out Voltage 2.3 2.5 V 0.85xVCC VCC-0.4 0.45 V IOL = 4.0mA, VCC= VCC min IOH = -2mA, VCC=VCC min IOH = -100uA, VCC min 11.5 12.5 V VCC=3.3V -0.5 0.7xVCC 0.2 5 0.8 VCC+ 0.3 uA V V VIH=VCC ± 0.3V;VIL=VSS ± 0.3V 15 0.2 0.2 MIN. TYP MAX. ±1 35 ±1 12 4 12 4 30 5 5 UNIT uA uA uA mA mA mA mA mA uA uA CONDITIONS VIN = VSS to VCC VCC=VCC max; A9=12.5V VOUT = VSS to VCC, VCC=VCC max CE=VIL, OE=VIH (Byte Mode) CE=VIL, OE=VIH (Word Mode) CE=VIL, OE=VIH CE; RESET=VCC ± 0.3V RESET=VSS ± 0.3V @5MHz @1MHz @5MHz @1MHz NOTES: 1.VIL min. = -1.0V for pulse width is equal to or less than 50 ns. VIL min. = -2.0V for pulse width is equal to or less than 20 ns. 2.VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns If VIH is over the specified maximum value, read operation cannot be guaranteed. 3.Automatic sleep mode enable the low power mode when addresses remain stable for tACC +30ns. P/N:PM0709 REV. 1.3, JAN. 24, 2002 20 MX29LV800T/B AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V Table 9. READ OPERATIONS 29LV800T/B-70(R) SYMBOL tRC tACC tCE tOE tDF tOEH PARAMETER Read Cycle Time (Note 1) Address to Output Delay CE to Output Delay OE to Output Delay OE High to Output Float (Note1) Output Enable Hold Time tOH Read Toggle and Data Polling 0 0 10 0 NOTE: MIN. MAX. 70 70 70 30 25 0 0 10 0 29LV800T/B-90 MIN. MAX. 90 90 90 35 30 UNIT ns ns ns ns ns ns ns ns CE=OE=VIL CE=OE=VIL OE=VIL CE=VIL CE=VIL CONDITIONS Address to Output hold TEST CONDITIONS: • Input pulse levels: 0V/3.0V. • Input rise and fall times is equal to or less than 5ns. • Output load: 1 TTL gate + 100pF (Including scope and jig), for 29LV800T/B-90. 1 TTL gate + 30pF (Including scope and jig) for 29LV800T/B-70 and 29LV800T/B70R. • Reference levels for measuring timing: 1.5V. 1. Not 100% tested. 2. tDF is defined as the time at which the output achieves the open circuit condition and data is no longer driven. 3. 29LV800T/B-70R operates at VCC=3.0V~3.6V P/N:PM0709 REV. 1.3, JAN. 24, 2002 21 MX29LV800T/B SWITCHING TEST CIRCUITS DEVICE UNDER TEST 2.7K ohm +3.3V CL 6.2K ohm DIODES=IN3064 OR EQUIVALENT CL= 100pF Including jig capacitance (30pF for MX29LV800T/B-70 & MX29LV800T/B-70R) SWITCHING TEST WAVEFORMS 3.0V TEST POINTS 0V INPUT OUTPUT AC TESTING: Inputs are driven at 3.0V for a logic "1" and 0V for a logic "0". Input pulse rise and fall times are < 5ns. P/N:PM0709 REV. 1.3, JAN. 24, 2002 22 MX29LV800T/B Figure 1. READ TIMING WAVEFORMS tRC VIH Addresses VIL ADD Valid tACC tCE CE VIH VIL WE VIH VIL tOEH VIH tOE tDF OE VIL tACC tOH Outputs VOH VOL HIGH Z DATA Valid HIGH Z VIH RESET VIL P/N:PM0709 REV. 1.3, JAN. 24, 2002 23 MX29LV800T/B AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V Table 10. Erase/Program Operations 29LV800T/B-70 (R) SYMBOL tWC tAS tAH tDS tDH tOES tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS tRB tBUSY tWPP1 tWPP2 PARAMETER Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write (OE High to WE Low) CE Setup Time CE Hold Time Write Pulse Width Write Pulse Width High Programming Operation (Note 2) (Byte/Word program time) Sector Erase Operation (Note 2) VCC Setup Time (Note 1) Recovery Time from RY/BY Program/Erase Vaild to RY/BY Delay Write Pulse Width for Sector Protect (A9, OE Control) Write Pulse Width for Sector Unprotect (A9, OE Control) NOTES: 29LV800T/B-90 MIN. 90 0 45 45 0 0 0 0 0 35 30 9/11(TYP.) 0.7(TYP.) 50 0 MAX. UNIT ns ns ns ns ns ns ns ns ns ns ns us sec us ns 90 100ns 100ns 10us (Typ.) 12ms (Typ.) ns MIN. 70 0 45 35 0 0 0 0 0 35 30 MAX. 9/11(TYP.) 0.7(TYP.) 50 0 90 100ns 100ns 10us (Typ.) 12ms (Typ.) 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more information. 3. 29LV800T/B-70R operates at VCC=3.0V~3.6V. P/N:PM0709 REV. 1.3, JAN. 24, 2002 24 MX29LV800T/B AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V Table 11. Alternate CE Controlled Erase/Program Operations 29LV800T/B-70 (R) SYMBOL tWC tAS tAH tDS tDH tOES tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2 NOTE: 29LV800T/B-90 MIN. 70 0 45 45 0 0 0 0 0 35 30 9(Typ.) 11(Typ.) 0.7(Typ.) MAX. UNIT ns ns ns ns ns ns ns ns ns ns ns us us sec PARAMETER Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write WE Setup Time WE Hold Time CE Pulse Width CE Pulse Width High Programming Operation(note2) Byte Word MIN. 70 0 45 35 0 0 0 0 0 35 30 9Typ.) 11(Typ.) 0.7(Typ.) MAX. Sector Erase Operation (note2) 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more information. 3. 29LV800T/B-70R operates at VCC=3.0V~3.6V P/N:PM0709 REV. 1.3, JAN. 24, 2002 25 MX29LV800T/B Figure 2. COMMAND WRITE TIMING WAVEFORM VCC 3V Addresses VIH ADD Valid VIL tAS tAH WE VIH VIL tOES tWPH tCWC tWP CE VIH VIL tCS tCH OE VIH VIL VIH tDS tDH Data VIL DIN P/N:PM0709 REV. 1.3, JAN. 24, 2002 26 MX29LV800T/B AUTOMATIC PROGRAMMING TIMING WAVEFORM One byte data is programmed. Verify in fast algorithm and additional verification by external control are not required because these operations are executed automatically by internal control circuit. Programming completion can be verified by DATA polling and toggle bit checking after automatic programming starts. Device outputs DATA during programming and DATA after programming on Q7.(Q6 is for toggle bit; see toggle bit, DATA polling, timing waveform) Figure 3. AUTOMATIC PROGRAMMING TIMING WAVEFORM Program Command Sequence(last two cycle) tWC tAS Read Status Data (last two cycle) Address 555h PA tAH PA PA CE tCH tGHWL OE tWP tWHWH1 WE tCS tDS tDH tWPH A0h Data PD Status DOUT tBUSY tRB RY/BY tVCS VCC NOTES: 1.PA=Program Address, PD=Program Data, DOUT is the true data the program address P/N:PM0709 REV. 1.3, JAN. 24, 2002 27 MX29LV800T/B Figure 4. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data A0H Address 555H Write Program Data/Address Increment Address Data Poll from system No Verify Word Ok ? YES No Last Address ? YES Auto Program Completed P/N:PM0709 REV. 1.3, JAN. 24, 2002 28 MX29LV800T/B Figure 5. CE CONTROLLED PROGRAM TIMING WAVEFORM PA for program SA for sector erase 555 for chip erase 555 for program 2AA for erase Data Polling Address tWC tWH tAS tAH PA WE tGHEL OE tCP tWHWH1 or 2 CE tWS tDS tDH tCPH tBUSY DQ7 DOUT Data tRH A0 for program 55 for erase PD for program 30 for sector erase 10 for chip erase RESET RY/BY NOTES: 1.PA=Program Address, PD=Program Data, DOUT=Data Out, DQ7=complement of data written to device. 2.Figure indicates the last two bus cycles of the command sequence. P/N:PM0709 REV. 1.3, JAN. 24, 2002 29 MX29LV800T/B AUTOMATIC CHIP ERASE TIMING WAVEFORM All data in chip are erased. External erase verification is not required because data is verified automatically by internal control circuit. Erasure completion can be verified by DATA polling and toggle bit checking after automatic erase starts. Device outputs 0 during erasure and 1 after erasure on Q7.(Q6 is for toggle bit; see toggle bit, DATA polling, timing waveform) Figure 6. AUTOMATIC CHIP ERASE TIMING WAVEFORM Erase Command Sequence(last two cycle) tWC tAS Read Status Data Address 2AAh 555h tAH VA VA CE tCH tGHWL OE tWP tWHWH2 WE tCS tDS tDH tWPH 55h Data 10h In Progress Complete tBUSY tRB RY/BY tVCS VCC NOTES: SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status"). P/N:PM0709 REV. 1.3, JAN. 24, 2002 30 MX29LV800T/B Figure 7. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 80H Address 555H Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 10H Address 555H Data Pall from System NO Data=FFh ? YES Auto Chip Erase Completed P/N:PM0709 REV. 1.3, JAN. 24, 2002 31 MX29LV800T/B AUTOMATIC SECTOR ERASE TIMING WAVEFORM Sector indicated by A12 to A18 are erased. External erase verify is not required because data are verified automatically by internal control circuit. Erasure completion can be verified by DATA polling and toggle bit checking after automatic erase starts. Device outputs 0 during erasure and 1 after erasure on Q7.(Q6 is for toggle bit; see toggle bit, DATA polling, timing waveform) Figure 8. AUTOMATIC SECTOR ERASE TIMING WAVEFORM Erase Command Sequence(last two cycle) tWC tAS Read Status Data Address 2AAh SA tAH VA VA CE tCH tGHWL OE tWP tWHWH2 WE tCS tDS tDH tWPH 55h Data 30h In Progress Complete tBUSY tRB RY/BY tVCS VCC NOTES: SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status"). P/N:PM0709 REV. 1.3, JAN. 24, 2002 32 MX29LV800T/B Figure 9. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 80H Address 555H Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 30H Sector Address Last Sector to Erase YES Data Poll from System NO Data=FFh NO YES Auto Sector Erase Completed P/N:PM0709 REV. 1.3, JAN. 24, 2002 33 MX29LV800T/B Figure 10. ERASE SUSPEND/ERASE RESUME FLOWCHART START Write Data B0H NO Toggle Bit checking Q6 not toggled YES Read Array or Program ERASE SUSPEND Reading or Programming End YES Write Data 30H NO ERASE RESUME Continue Erase Another Erase Suspend ? YES NO P/N:PM0709 REV. 1.3, JAN. 24, 2002 34 MX29LV800T/B Figure 11. IN-SYSTEM SECTOR PROTECT/UNPROTECT TIMING WAVEFORM (RESET Control) VID VIH RESET SA, A6 A1, A0 Valid* Valid* Valid* Sector Protect or Sector Unprotect Data 1us Verify 40h Status 60h 60h Sector Protect =150us Sector Unprotect =15ms CE WE OE Note: When sector protect, A6=0, A1=1, A0=0. When sector unprotect, A6=1, A1=1, A0=0. P/N:PM0709 REV. 1.3, JAN. 24, 2002 35 MX29LV800T/B Figure 12. SECTOR PROTECT TIMING WAVEFORM(A9, OE Control) A1 A6 12V 3V A9 tVLHT Verify 12V 3V OE tVLHT tWPP 1 tVLHT WE tOESP CE Data tOE 01H F0H A18-A12 Sector Address P/N:PM0709 REV. 1.3, JAN. 24, 2002 36 MX29LV800T/B Figure 13. SECTOR PROTECTION ALGORITHM (A9, OE Control) START Set Up Sector Addr PLSCNT=1 OE=VID,A9=VID,CE=VIL A6=VIL Activate WE Pulse Time Out 150us Set WE=VIH, CE=OE=VIL A9 should remain VID . No Read from Sector Addr=SA, A1=1 PLSCNT=32? No Data=01H? Yes Device Failed Protect Another Sector? Yes Remove VID from A9 Write Reset Command Sector Protection Complete P/N:PM0709 REV. 1.3, JAN. 24, 2002 37 MX29LV800T/B Figure 14. IN-SYSTEM SECTOR PROTECTION ALGORITHM WITH RESET=VID START PLSCNT=1 RESET=VID Wait 1us First Write Cycle=60H Yes Set up sector address No Temporary Sector Unprotect Mode Write 60H to sector address with A6=0, A1=1, A0=0 Wait 150us Increment PLSCNT Verify sector protect : write 40H with A6=0, A1=1, A0=0 Reset PLSCNT=1 Read from sector address No No Data=01H ? PLSCNT=25? Yes Device failed Yes Protect another sector? No Remove VID from RESET Yes Write reset command Sector protect complete P/N:PM0709 REV. 1.3, JAN. 24, 2002 38 MX29LV800T/B Figure 15. IN-SYSTEM SECTOR UNPROTECTION ALGORITHM WITH RESET=VID START PLSCNT=1 RESET=VID Wait 1us First Write Cycle=60H ? Yes No Temporary Sector Unprotect Mode All sector protected? Yes Set up first sector address No Protect all sectors Sector unprotect : write 60H with A6=1, A1=1, A0=0 Wait 50ms Increment PLSCNT Verify sector unprotect write 40H to sector address with A6=1, A1=1, A0=0 Read from sector address with A6=1, A1=1, A0=0 No No Data=00H ? PLSCNT=1000? Set up next sector address Yes Device failed Yes Last sector verified? No Remove VID from RESET Yes Write reset command Sector unprotect complete P/N:PM0709 REV. 1.3, JAN. 24, 2002 39 MX29LV800T/B Figure 16. TIMING WAVEFORM FOR CHIP UNPROTECTION (A9, OE Control) A1 12V Vcc 3V A9 tVLHT A6 Verify 12V Vcc 3V OE tVLHT tWPP 2 tVLHT WE tOESP CE Data tOE 00H F0H A18-A12 Sector Address Notes: tVLHT (Voltage transition time)=4us min. tWPP1 (Write pulse width for sector protect)=100ns min, 10us(Typ.) tWPP2 (Write pulse width for sector unprotect)=100ns min, 12ms(Typ.) tOESP (OE setup time to WE active)=4us min. P/N:PM0709 REV. 1.3, JAN. 24, 2002 40 MX29LV800T/B Figure 17. CHIP UNPROTECTION ALGORITHM(A9, OE Control) START Protect All Sectors PLSCNT=1 Set OE=A9=VID CE=VIL,A6=1 Activate WE Pulse Time Out 50ms Increment PLSCNT Set OE=CE=VIL A9=VID,A1=1 Set Up First Sector Addr Read Data from Device No Increment Sector Addr Data=00H? No PLSCNT=1000? Yes No Yes Device Failed All sectors have been verified? Yes Remove VID from A9 Write Reset Command Chip Unprotect Complete * It is recommended before unprotect whole chip, all sectors should be protected in advance. P/N:PM0709 REV. 1.3, JAN. 24, 2002 41 MX29LV800T/B WRITE OPERATION STATUS Figure 18. DATA POLLING ALGORITHM Start Read Q7~Q0 Add.=VA(1) Q7 = Data ? Yes No No Q5 = 1 ? Yes Read Q7~Q0 Add.=VA Q7 = Data ? (2) No FAIL Yes Pass NOTE : 1.VA=Valid address for programming 2.Q7 should be re-checked even Q5="1" because Q7 may change simultaneously with Q5. P/N:PM0709 REV. 1.3, JAN. 24, 2002 42 MX29LV800T/B Figure 19. TOGGLE BIT ALOGRITHM Start Read Q7-Q0 Read Q7-Q0 (Note 1) Toggle Bit Q6 = Toggle ? NO YES NO Q5= 1? YES Read Q7~Q0 Twice (Note 1,2) Toggle bit Q6= Toggle? NO YES Program/Erase Operation Not Complete,Write Reset Command Program/Erase operation Complete Note:1.Read toggle bit twice to determine whether or not it is toggling. 2. Recheck toggle bit because it may stop toggling as Q5 change to "1". P/N:PM0709 REV. 1.3, JAN. 24, 2002 43 MX29LV800T/B Figure 20. Data Polling Timings (During Automatic Algorithms) tRC Address VA tACC tCE VA VA CE tCH tOE OE tOEH tDF WE tOH Q7 Q0-Q6 tBUSY Complement Complement True Valid Data High Z Status Data Status Data True Valid Data High Z RY/BY NOTES: VA=Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and array data read cycle. P/N:PM0709 REV. 1.3, JAN. 24, 2002 44 MX29LV800T/B Figure 21. Toggle Bit Timings (During Automatic Algorithms) tRC Address VA tACC tCE VA VA VA CE tCH tOE OE tOEH tDF WE tOH Q6/Q2 High Z Valid Status (first raed) Valid Status (second read) Valid Data (stops toggling) Valid Data tBUSY RY/BY NOTES: VA=Valid address; not required for Q6. Figure shows first two status cycle after command sequence, last status read cycle, and array data read cycle. P/N:PM0709 REV. 1.3, JAN. 24, 2002 45 MX29LV800T/B Table 12. AC CHARACTERISTICS Parameter Std tREADY1 Description RESET PIN Low (During Automatic Algorithms) to Read or Write (See Note) tREADY2 RESET PIN Low (NOT During Automatic Algorithms) to Read or Write (See Note) tRP tRH tRB RESET Pulse Width (During Automatic Algorithms) RESET High Time Before Read(See Note) RY/BY Recovery Time(to CE, OE go low) MIN MIN MIN 500 50 0 ns ns ns MAX 500 ns Test Setup All Speed Options Unit MAX 20 us Note:Not 100% tested Figure 22. RESET TIMING WAVEFORM RY/BY CE, OE tRH RESET tRP tReady2 Reset Timing NOT during Automatic Algorithms tReady1 RY/BY tRB CE, OE RESET tRP Reset Timing during Automatic Algorithms P/N:PM0709 REV. 1.3, JAN. 24, 2002 46 MX29LV800T/B AC CHARACTERISTICS WORD/BYTE CONFIGURATION (BYTE) Parameter JEDEC Std tELFL/tELFH tFLQZ tFHQV CE to BYTE Switching Low or High BYTE Switching Low to Output HIGH Z BYTE Switching High to Output Active Max Max Min 25 70 Description Speed Options -70 -90 5 30 90 30 120 -120 ns ns ns Unit Figure 23. BYTE TIMING WAVEFORM FOR READ OPERATIONS (BYTE switching from byte mode to word mode) CE OE tELFH BYTE Q0~Q14 DOUT (Q0-Q7) DOUT (Q0-Q14) Q15/A-1 VA tFHQV DOUT (Q15) P/N:PM0709 REV. 1.3, JAN. 24, 2002 47 MX29LV800T/B Figure 24. BYTE TIMING WAVEFORM FOR READ OPERATIONS (BYTE switching from word mode to byte mode) CE OE tELFH BYTE Q0~Q14 DOUT (Q0-Q14) DOUT (Q0-Q7) Q15/A-1 DOUT (Q15) tFLQZ VA Figure 25. BYTE TIMING WAVEFORM FOR PROGRAM OPERATIONS CE The falling edge of the last WE signal WE BYTE tAS tAH P/N:PM0709 REV. 1.3, JAN. 24, 2002 48 MX29LV800T/B Table 13. TEMPORARY SECTOR UNPROTECT Parameter Std. tVIDR tRSP Note: Not 100% tested Description VID Rise and Fall Time (See Note) RESET Setup Time for Temporary Sector Unprotect Test Setup Min Min AllSpeed Options Unit 500 4 ns us FIgure 26. TEMPORARY SECTOR UNPROTECT TIMING DIAGRAM 12V RESET 0 or Vcc Program or Erase Command Sequence 0 or Vcc tVIDR tVIDR CE WE tRSP RY/BY Figure 27. Q6 vs Q2 for Erase and Erase Suspend Operations Enter Embedded Erasing Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Program Erase Suspend Read Erase Resume Erase Erase Complete WE Q6 Q2 NOTES: The system can use OE or CE to toggle Q2/Q6, Q2 toggles only when read at an address within an erase-suspended P/N:PM0709 REV. 1.3, JAN. 24, 2002 49 MX29LV800T/B Figure 28. TEMPORARY SECTOR UNPROTECT ALGORITHM Start RESET = VID (Note 1) Perform Erase or Program Operation Operation Completed RESET = VIH Temporary Sector Unprotect Completed(Note 2) Note : 1. All protected sectors are temporary unprotected. VID=11.5V~12.5V 2. All previously protected sectors are protected again. P/N:PM0709 REV. 1.3, JAN. 24, 2002 50 MX29LV800T/B Figure 29. ID CODE READ TIMING WAVEFORM VCC 3V VID VIH VIL VIH VIL tACC VIH tACC ADD A9 ADD A0 A1 VIL ADD A2-A8 A10-A18 CE VIH VIL VIH VIL WE VIH VIL tCE OE VIH VIL tOE tDF tOH tOH VIH DATA Q0-Q15 DATA OUT VIL DATA OUT DAH/5BH (Byte) 22DAH/225BH (Word) C2H/00C2H P/N:PM0709 REV. 1.3, JAN. 24, 2002 51 MX29LV800T/B ERASE AND PROGRAMMING PERFORMANCE(1) PARAMETER Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Chip Programming Time Byte Mode Word Mode Erase/Program Cycles 100,000 MIN. LIMITS TYP.(2) 0.7 14 9 11 9 5.8 MAX.(3) 15 UNITS sec sec 300 360 27 17 us us sec sec Cycles Note: 1.Not 100% Tested, Excludes external system level over head. 2.Typical values measured at 25°C, 3V. 3.Maximum values measured at 25°C, 2.7V. LATCHUP CHARACTERISTICS MIN. Input Voltage with respect to GND on all pins except I/O pins Input Voltage with respect to GND on all I/O pins Current Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time. -1.0V -1.0V -100mA MAX. 12.5V Vcc + 1.0V +100mA P/N:PM0709 REV. 1.3, JAN. 24, 2002 52 MX29LV800T/B ORDERING INFORMATION PLASTIC PACKAGE PART NO. MX29LV800TMC-70 MX29LV800BMC-70 MX29LV800TMC-90 MX29LV800BMC-90 MX29LV800TTC-70 MX29LV800TTC-70R MX29LV800BTC-70 MX29LV800BTC-70R MX29LV800TTC-90 MX29LV800BTC-90 MX29LV800TXBC-70 MX29LV800TXBC-90 MX29LV800BXBC-70 MX29LV800BXBC-90 MX29LV800TXEC-70 MX29LV800TXEC-90 MX29LV800BXEC-70 MX29LV800BXEC-90 MX29LV800TMI-70 MX29LV800BMI-70 MX29LV800TMI-90 MX29LV800BMI-90 MX29LV800TTI-70 MX29LV800TTI-70R MX29LV800BTI-70 MX29LV800BTI-70R ACCESS TIME (ns) 70 70 90 90 70 70 70 70 90 90 70 90 70 90 70 90 70 90 70 70 90 90 70 70 70 70 OPERATING CURRENT MAX.(mA) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 STANDBY CURRENT MAX.(uA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 PACKAGE 44 Pin SOP 44 Pin SOP 44 Pin SOP 44 Pin SOP 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Ball CSP 48 Ball CSP 48 Ball CSP 48 Ball CSP 48 Ball CSP 48 Ball CSP 48 Ball CSP 48 Ball CSP 44 Pin SOP 44 Pin SOP 44 Pin SOP 44 Pin SOP 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) P/N:PM0709 REV. 1.3, JAN. 24, 2002 53 MX29LV800T/B PART NO. MX29LV800TTI-90 MX29LV800BTI-90 MX29LV800TXBI-70 MX29LV800TXBI-90 MX29LV800BXBI-70 MX29LV800BXBI-90 MX29LV800TXEI-70 MX29LV800TXEI-90 MX29LV800BXEI-70 MX29LV800BXEI-90 ACCESS TIME (ns) 90 90 70 90 70 90 70 90 70 90 OPERATING CURRENT MAX.(mA) 30 30 30 30 30 30 30 30 30 30 STANDBY CURRENT MAX.(uA) 5 5 5 5 5 5 5 5 5 5 PACKAGE 48 Pin TSOP (Normal Type) 48 Pin TSOP (Normal Type) 48 Ball CSP 48 Ball CSP 48 Ball CSP 48 Ball CSP 48 Ball CSP 48 Ball CSP 48 Ball CSP 48 Ball CSP P/N:PM0709 REV. 1.3, JAN. 24, 2002 54 MX29LV800T/B PACKAGE INFORMATION 48-PIN PLASTIC TSOP P/N:PM0709 REV. 1.3, JAN. 24, 2002 55 MX29LV800T/B 44-PIN PLASTIC SOP P/N:PM0709 REV. 1.3, JAN. 24, 2002 56 MX29LV800T/B 48-Ball CSP (for MX29LV800TXBC/TXBI/BXBC/BXBI) P/N:PM0709 REV. 1.3, JAN. 24, 2002 57 MX29LV800T/B 48-Ball CSP (for MX29LV800TXEC/TXEI/BXEC/BXEI) P/N:PM0709 REV. 1.3, JAN. 24, 2002 58 MX29LV800T/B REVISION HISTORY Revision No. Description 1.0 Change heading as "PRELIMINARY" Correct mis-typing Changed tBUSY spec from 90us to 90ns Correct mis-typing tBUSY timing was changed from 90ns min. to 90ns max. Add protection waveform and flowchart(A9, OE control) Add BYTE timing waveform 1.Wording change of sector erase commands 2.Add the typical spec of tWPP1/tWPP2 Add MX29LV800TXEC & MX29LV800TXEI & MX29LV800BXEC & MX29LV800BXEI in Ordering Information Add 48-Ball CSP for MX29LV800TXEC/TXEI/BXEC/BXEI Page Date P1 JUL/31/2001 P10,19~22,24, 25,48 P24 P1,11,38,39, SEP/12/2001 44 P24 P36,37 P47,48 P11,13 NOV/23/2001 P24,40 P53,54 JAN/24/2002 P58 1.1 1.2 1.3 P/N:PM0709 REV. 1.3, JAN. 24, 2002 59 MX29LV800T/B MACRONIX INTERNATIONAL CO., LTD. HEADQUARTERS: TEL:+886-3-578-6688 FAX:+886-3-563-2888 EUROPE OFFICE: TEL:+32-2-456-8020 FAX:+32-2-456-8021 JAPAN OFFICE: TEL:+81-44-246-9100 FAX:+81-44-246-9105 SINGAPORE OFFICE: TEL:+65-348-8385 FAX:+65-348-8096 TAIPEI OFFICE: TEL:+886-2-2509-3300 FAX:+886-2-2509-2200 MACRONIX AMERICA, INC. TEL:+1-408-453-8088 FAX:+1-408-453-8488 CHICAGO OFFICE: TEL:+1-847-963-1900 FAX:+1-847-963-1909 http : //www.macronix.com MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.