MX30UF4G28AB-XKI

MX30UF2G26(28)AB MX30UF4G26(28)AB 1.8V, 2G/4G-bit NAND Flash Memory MX30UFxG26(28)AB P/N: PM2031 REV. 1.0, MAY 29, 2014 1 MX30UF2G26(28)AB MX30UF4G26(28)AB Contents 1. FEATURES........................................................................................................................................6 2. GENERAL DESCRIPTIONS..............................................................................................................7 Figure 1. Logic Diagram ........................................................................................................................ 7 2-1. ORDERING INFORMATION....................................................................................................8 3. PIN CONFIGURATIONS..................................................................................................................10 3-1. PIN DESCRIPTIONS..............................................................................................................13 4. BLOCK DIAGRAM...........................................................................................................................15 5. SCHEMATIC CELL LAYOUT AND ADDRESS ASSIGNMENT.......................................................16 Table 1-1. Address Allocation (for x8): MX30UFxG28AB...................................................................... 16 Table 1-2. Address Allocation (for x16): MX30UFxG26AB.................................................................... 16 6. DEVICE OPERATIONS....................................................................................................................17 6-1. Address Input/Command Input/Data Input.........................................................................17 Figure 2. AC Waveforms for Command / Address / Data Latch Timing................................................ 17 Figure 3. AC Waveforms for Address Input Cycle................................................................................. 17 Figure 4. AC Waveforms for Command Input Cycle............................................................................. 18 Figure 5. AC Waveforms for Data Input Cycle...................................................................................... 18 6-2. Page Read.............................................................................................................................19 Figure 6. AC Waveforms for Read Cycle.............................................................................................. 19 Figure 7. AC Waveforms for Read Operation (Intercepted by CE#)..................................................... 20 Figure 8. AC Waveforms for Read Operation (with CE# Don't Care).................................................... 21 Figure 9-1. AC Waveforms for Sequential Data Out Cycle (After Read)............................................... 21 Figure 9-2. AC Waveforms for Sequential Data Out Cycle (After Read) - EDO Mode.......................... 22 Figure 10. AC Waveforms for Random Data Output............................................................................. 23 6-3. Cache Read Sequential........................................................................................................24 Figure 11-1. AC Waveforms for Cache Read Sequential...................................................................... 25 6-4. Cache Read Random............................................................................................................26 Figure 11-2. AC Waveforms for Cache Read Random......................................................................... 27 6-5. Page Program.......................................................................................................................28 Figure 12. AC Waveforms for Program Operation after Command 80H............................................... 28 Figure 13. AC Waveforms for Random Data In (For Page Program).................................................... 29 Figure 14. AC Waveforms for Program Operation with CE# Don't Care............................................... 30 6-6. Cache Program.....................................................................................................................31 Figure 15-1. AC Waveforms for Cache Program ................................................................................. 32 Figure 15-2. AC Waveforms for Sequence of Cache Program ............................................................ 33 P/N: PM2031 REV. 1.0, MAY 29, 2014 2 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-7. Block Erase...........................................................................................................................34 Figure 16. AC Waveforms for Erase Operation..................................................................................... 34 6-8. ID Read..................................................................................................................................35 Table 2. ID Codes Read Out by ID Read Command 90H..................................................................... 35 Table 3. The Definition of Byte2~Byte4 of ID Table............................................................................... 36 Figure 17-1. AC Waveforms for ID Read Operation.............................................................................. 37 Figure 17-2. AC Waveforms for ID Read (ONFI Identifier) Operation................................................... 37 6-9. Status Read...........................................................................................................................38 Table 4. Status Output........................................................................................................................... 38 Figure 18. Bit Assignment (HEX Data).................................................................................................. 39 Figure 19. AC Waveforms for Status Read Operation.......................................................................... 39 6-10. Status Enhance Read...........................................................................................................40 Figure 20. AC Waveforms for Status Enhance Operation..................................................................... 40 6-11. Reset......................................................................................................................................41 Figure 21. AC waveforms for Reset Operation..................................................................................... 41 6-12. Parameter Page Read (ONFI)...............................................................................................42 Figure 22. AC waveforms for Parameter Page Read (ONFI) Operation .............................................. 42 Figure 23. AC Waveforms for Parameter Page Read (ONFI) Random Operation (For 05h-E0h)........ 43 Table 5. Parameter Page (ONFI).......................................................................................................... 44 6-13. Unique ID Read (ONFI).........................................................................................................46 Figure 24. AC waveforms for Unique ID Read Operation..................................................................... 47 Figure 25. AC waveforms for Unique ID Read Operation (For 05h-E0h).............................................. 48 6-14. Feature Set Operation (ONFI)..............................................................................................49 Table 6-1. Definition of Feature Address............................................................................................... 49 Table 6-2. Sub-Feature Parameter Table of Feature Address - 01h (Timing Mode)............................. 49 Table 6-3. Sub-Feature Parameter Table of Feature Address - 80h (Programmable I/O Drive Strength).... 50 Table 6-4. Sub-Feature Parameter Table of Feature Address- 81h (Programmable R/B# pull-down Strength).....50 Table 6-5. Sub-Feature Parameter Table of Feature Address - 90h (Array Operation Mode)............... 50 6-14-1. Set Feature (ONFI).................................................................................................................. 51 Figure 26. AC Waveforms for Set Feature (ONFI) Operation .............................................................. 51 6-14-2. Get Feature (ONFI).................................................................................................................. 52 Figure 27. AC Waveforms for Get Feature (ONFI) Operation............................................................... 52 6-14-3. Secure OTP (One-Time-Programmable) Feature................................................................. 53 Figure 28. AC Waveforms for OTP Data Read..................................................................................... 53 Figure 29. AC Waveforms for OTP Data Read with Random Data Output........................................... 54 Figure 30. AC Waveforms for OTP Data Program................................................................................ 55 Figure 31. AC Waveforms for OTP Data Program with Random Data Input......................................... 56 Figure 32. AC Waveforms for OTP Protection Operation ..................................................................... 57 P/N: PM2031 REV. 1.0, MAY 29, 2014 3 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-15. Two-Plane Operations..........................................................................................................58 6-16. Two-plane Program (ONFI) and Two-plane Cache Program (ONFI).................................59 Figure 33-1. AC Waveforms for Two-plane Program (ONFI)................................................................ 59 Figure 33-2. AC Waveforms for Page Program Random Data Two-plane (ONFI)................................ 60 Figure 34. AC Waveforms for Two-plane Cache Program (ONFI)........................................................ 61 6-17. Two-plane Block Erase (ONFI).............................................................................................62 Figure 35. AC Waveforms for Two-plane Erase (ONFI)........................................................................ 62 6-18. Block Protection...................................................................................................................63 6-18-1. Block Un-Protect..................................................................................................................... 63 Table 7-1. Address Cycle Definition of Block Un-Protect (For x8)......................................................... 63 Table 7-2. Address Cycle Definition of Block Un-Protect (For x16)....................................................... 63 Figure 36. Invert-Bit to Define Un-Protected Area Options................................................................... 64 Figure 37. AC Waveforms for Block Unprotection................................................................................. 64 6-18-2. Block Protect........................................................................................................................... 65 Figure 38. AC Waveforms for Block Protection..................................................................................... 65 6-18-3. Block Solid-Protect................................................................................................................. 66 Figure 39. AC Waveforms for Block Solid-Protect............................................................................... 66 6-18-4. Block Protection Status Read............................................................................................... 67 Table 8. The Block-Protection Status Output........................................................................................ 67 Figure 40. AC Waveforms for Block Protection Status Read................................................................ 67 7. PARAMETERS.................................................................................................................................68 7-1. ABSOLUTE MAXIMUM RATINGS........................................................................................68 Table 9. Operating Range..................................................................................................................... 69 Table 10. DC Characteristics................................................................................................................. 69 Table 11. Capacitance........................................................................................................................... 70 Table 12. AC Testing Conditions........................................................................................................... 70 Table 13. Program and Erase Characteristics....................................................................................... 70 Table 14. AC Characteristics................................................................................................................. 71 8. OPERATION MODES: LOGIC AND COMMAND TABLES.............................................................72 Table 15. Logic Table............................................................................................................................ 72 Table 16-1. HEX Command Table......................................................................................................... 73 Table 16-2. Two-plane Command Set................................................................................................... 73 8-1. R/B#: Termination for The Ready/Busy# Pin (R/B#).........................................................74 Figure 41. R/B# Pin Timing Information................................................................................................ 75 P/N: PM2031 REV. 1.0, MAY 29, 2014 4 MX30UF2G26(28)AB MX30UF4G26(28)AB 8-2. Power On/Off Sequence.......................................................................................................76 Figure 42. Power On/Off Sequence ..................................................................................................... 76 8-2-1. WP# Signal .............................................................................................................................. 77 Figure 43-1. Enable Programming of WP# Signal................................................................................ 77 Figure 43-2. Disable Programming of WP# Signal................................................................................... 77 Figure 43-3. Enable Erasing of WP# Signal.......................................................................................... 77 Figure 43-4. Disable Erasing of WP# Signal......................................................................................... 77 9. SOFTWARE ALGORITHM...............................................................................................................78 9-1. Invalid Blocks (Bad Blocks) ................................................................................................78 Figure 44. Bad Blocks........................................................................................................................... 78 Table 17. Valid Blocks........................................................................................................................... 78 9-2. Bad Block Test Flow.............................................................................................................79 Figure 45. Bad Block Test Flow............................................................................................................. 79 9-3. Failure Phenomena for Read/Program/Erase Operations................................................79 Table 18. Failure Modes........................................................................................................................ 79 9-4. Program.................................................................................................................................80 Figure 46. Failure Modes...................................................................................................................... 80 Figure 47. Program Flow Chart............................................................................................................. 80 9-5. Erase......................................................................................................................................80 Figure 48. Erase Flow Chart................................................................................................................. 81 Figure 49. Read Flow Chart.................................................................................................................. 81 10. PACKAGE INFORMATION..............................................................................................................82 11. REVISION HISTORY .......................................................................................................................84 P/N: PM2031 REV. 1.0, MAY 29, 2014 5 MX30UF2G26(28)AB MX30UF4G26(28)AB 1.8V 2Gb/4Gb NAND Flash Memory 1. FEATURES • 2G-bit/4G-bit • Hardware Data Protection: WP# pin SLC NAND Flash - Bus: x8, x16 • Device Status Indicators - Page size: (2048+112) byte for x8 bus, (1024+56) word for x16 bus - Block size: (128K+7K) byte for x8 bus, - Ready/Busy (R/B#) pin - Status Register • Chip Enable Don't Care (64K+3.5K) word for x16 bus - Plane size: 1024-block/plane x 2 for 2Gb - Simplify System Interface • Unique ID Read support (ONFI) • Secure OTP support 2048-block/plane x 2 for 4Gb • Electronic Signature (5 Cycles) • ONFI 1.0 compliant • High Reliability • Multiplexed Command/Address/Data - Endurance: typical 100K cycles (with 8-bit ECC per (512+28) Byte) • User Redundancy - 112-byte attached to each page - Data Retention: 10 years • Fast Read Access • Wide Temperature Operating Range - Latency of array to register: 25us -40°C to +85°C - Sequential read: 25ns • Package: • Cache Read Support 1) 48-TSOP(I) (12mm x 20mm) • Page Program Operation 2) 63-ball 9mmx11mm VFBGA - Page program time: 320us (typ.) All packaged devices are RoHS Compliant and Halogen-free. • Cache Program Support • Block Erase Operation - Block erase time: 1ms (typ.) • Single Voltage Operation: - VCC: 1.7 ~ 1.95V • Low Power Dissipation - Max. 30mA (1.8V) Active current (Read/Program/Erase) • Sleep Mode - 50uA (Max) standby current P/N: PM2031 REV. 1.0, MAY 29, 2014 6 MX30UF2G26(28)AB MX30UF4G26(28)AB 2. GENERAL DESCRIPTIONS The MX30UFxG26(28)AB are 2Gb to 4Gb SLC NAND Flash memory devices. Its standard NAND Flash features and reliable quality of typical P/E cycles 100K (with ECC), which make it most suitable for embedded system code and data storage. The product family requires 8-bit ECC per 540B. This device is typically accessed in pages of 2,160 bytes (x8) or 1080 words (x16), both for read and for program operations. The device's array is organized as thousands of blocks, which is composed by 64 pages of (1024+32) words in two NAND strings structure with 32 serial connected cells in each string. Each page has an additional 56 words for ECC and other purposes. The device has an on-chip buffer of 2160 bytes or 1080 words (x16) for data load and access. The Cache Read Operation of the MX30UFxG26(28)AB enables first-byte read-access latency of 25us and sequential read of 25ns and the latency time of next sequential page will be shorten from tR to tRCBSY. The MX30UFxG26(28)AB power consumption is 30mA during all modes of operations (Read/Program/ Erase), and 50uA in standby mode. Figure 1. Logic Diagram 斯 ALE IOx - IO0 CLE CE# RE# WE# 2Gb 4Gb R/B# WP# PT (For 1.8V) P/N: PM2031 REV. 1.0, MAY 29, 2014 7 MX30UF2G26(28)AB MX30UF4G26(28)AB 2-1. ORDERING INFORMATION Part Name Description MX 30 U F 2G 26A B XK I xx RESERVE OPERATING TEMPERATURE: I: Industrial (-40°C to 85°C) PACKAGE TYPE: T: 48TSOP XK: 0.8mm Ball Pitch, 0.45mm Ball Size and 1.0mm height of VFBGA Package: RoHS Compliant & Halogen-free GENERATION (Tech. Code): B OPTION CODE: 28A= 8-bit ECC with standard feature, x8, mode A 26A= 8-bit ECC with standard feature, x16, mode A (Mode A: number of die=1, number of CE#=1, number of R/B#=1) DENSITY: 2G= 2G-bit 4G= 4G-bit CLASSIFICATION: F = SLC + Large Block VOLTAGE: U = 1.7V to 1.95V TYPE: 30 = NAND Flash BRAND: MX P/N: PM2031 REV. 1.0, MAY 29, 2014 8 MX30UF2G26(28)AB MX30UF4G26(28)AB Part Number Density Organization VCC Range Package Temperature Grade MX30UF2G28AB-XKI 2Gb x8 1.8V 63-VFBGA Industrial MX30UF2G26AB-XKI 2Gb x16 1.8V 63-VFBGA Industrial MX30UF2G28AB-TI 2Gb x8 1.8V 48-TSOP Industrial MX30UF4G28AB-XKI 4Gb x8 1.8V 63-VFBGA Industrial MX30UF4G26AB-XKI 4Gb x16 1.8V 63-VFBGA Industrial MX30UF4G28AB-TI 4Gb x8 1.8V 48-TSOP Industrial P/N: PM2031 REV. 1.0, MAY 29, 2014 9 MX30UF2G26(28)AB MX30UF4G26(28)AB 3. PIN CONFIGURATIONS 48-TSOP NC NC NC NC NC NC R/B# RE# CE# NC NC VCC VSS NC NC CLE ALE WE# WP# NC NC NC NC NC 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 VSS1 NC NC NC IO7 IO6 IO5 IO4 NC VCC1 PT VCC VSS NC VCC1 NC IO3 IO2 IO1 IO0 NC NC NC VSS1 Note 1. These pins might not be connected internally. However, it is recommended to connect these pins to power(or ground) as designated for ONFI compatibility. P/N: PM2031 REV. 1.0, MAY 29, 2014 10 MX30UF2G26(28)AB MX30UF4G26(28)AB 63-ball 9mmx11mm VFBGA (x8) 1 2 A NC NC B NC 3 4 6 5 8 7 C WP# ALE Vss CE# WE# R/B# D Vcc 1 RE# CLE NC NC NC E NC NC NC NC NC NC F NC NC NC NC Vss 1 NC G NC Vcc PT NC NC NC H NC I/O0 NC NC NC Vcc J NC IO1 NC Vcc IO5 IO7 K Vss IO2 IO3 IO4 I/O6 Vss 1 9 10 NC NC NC NC L NC NC NC NC M NC NC NC NC Note 1. These pins might not be connected internally; however, it is recommended to connect these pins to power (or ground) as designated for ONFI compatibility. P/N: PM2031 REV. 1.0, MAY 29, 2014 11 MX30UF2G26(28)AB MX30UF4G26(28)AB 63-ball 9mmx11mm VFBGA (x16) 1 2 A NC NC B NC 3 4 6 5 8 7 C WP# ALE Vss CE# WE# R/B# D Vcc 1 RE# CLE NC NC NC E NC NC NC NC NC NC F NC NC NC NC Vss 1 NC G NC Vcc 1 PT I/O13 I/O15 NC H I/O8 I/O0 I/O10 I/O12 I/O14 Vcc J I/O9 IO1 I/O11 Vcc IO5 IO7 K Vss IO2 IO3 IO4 I/O6 Vss 9 10 NC NC NC NC L NC NC NC NC M NC NC NC NC Note 1. These pins might not be connected internally; however, it is recommended to connect these pins to power (or ground) as designated for ONFI compatibility. P/N: PM2031 REV. 1.0, MAY 29, 2014 12 MX30UF2G26(28)AB MX30UF4G26(28)AB 3-1. PIN DESCRIPTIONS SYMBOL PIN NAME CE# Data I/O port: IO7-IO0 for x8 device, IO15-IO0 for x16 device Chip Enable (Active Low) RE# Read Enable (Active Low) WE# Write Enable (Active Low) CLE Command Latch Enable ALE Address Latch Enable WP# Write Protect (Active Low) R/B# VSS Ready/Busy (Open Drain) Protection (Active High) for entire chip protection. A weak pull-down internally Ground VCC Power Supply for Device Operation IOx - IO0 PT NC Not Connected Internally P/N: PM2031 REV. 1.0, MAY 29, 2014 13 MX30UF2G26(28)AB MX30UF4G26(28)AB PIN FUNCTIONS ADDRESS LATCH ENABLE: ALE The MX30UFxG26(28)AB device is a sequential access memory that utilizes multiplexing input of Command/Address/Data. The ALE controls the address input. When the ALE goes high, the address is latched at the rising edge of WE#. I/O PORT: IOx - IO0 WRITE PROTECT: WP# The IOx to IO0 pins are for address/command input and data output to/from the device. IO7-IO0 pins are for x8 device, IO15-IO0 pins are for x16 device. The WP# signal keeps low and then the memory will not accept the program/erase operation. It is recommended to keep WP# pin low during power on/off sequence. Please refer to the waveform of "Power On/Off Sequence". CHIP ENABLE: CE# The device goes into low-power Standby Mode when CE# goes high during a read operation and not at busy stage. READY/Busy: R/B# The R/B# is an open-drain output pin. The R/B# outputs the ready/busy status of read/program/ erase operation of the device. When the R/B# is at low, the device is busy for read or program or erase operation. When the R/B# is at high, the read/ program/erase operation is finished. The CE# goes low to enable the device to be ready for standard operation. When the CE# goes high, the device is deselected. However, when the device is at busy stage, the device will not go to standby mode when CE# pin goes high. Please refer to Section 9-1 for details. READ ENABLE: RE# PROTECTION: PT The RE# (Read Enable) allows the data to be output by a tREA time after the falling edge of RE#. The internal address counter is automatically increased by one at the falling edge of RE#. The PT pin is the hardware method to protect the whole chip from program/erase operation. When the PT pin is at high at power-on, the whole chip is protected even the WP# is at high; the un-protect command and procedure is necessary before any program/erase operation. When the PT pin is connected to low or floating, the Protection function is disabled. WRITE ENABLE: WE# When the WE# goes low, the address/data/ command are latched at the rising edge of WE#. Please refer to Section - Block Protection for details. COMMAND LATCH ENABLE: CLE The CLE controls the command input. When the CLE goes high, the command data is latched at the rising edge of the WE#. P/N: PM2031 REV. 1.0, MAY 29, 2014 14 MX30UF2G26(28)AB MX30UF4G26(28)AB CE# High Voltage Circuit WE# WP# RE# PT IO Port CLE ALE Control Logic X-DEC 4. BLOCK DIAGRAM Memory Array (Two planes for 2Gb/4Gb) Page Buffer ADDRESS COUNTER Y-DEC R/B# IO[x:0] Data Buffer P/N: PM2031 REV. 1.0, MAY 29, 2014 15 MX30UF2G26(28)AB MX30UF4G26(28)AB 5. SCHEMATIC CELL LAYOUT AND ADDRESS ASSIGNMENT The device is divided into two planes for 2Gb and 4Gb, which is composed by 64 pages of (2,048+112)-byte in two NAND strings structure with 32 serial connected cells in each string. Each page has an additional 112 bytes for ECC and other purposes. The device has an on-chip buffer of 2,160 bytes for data load and access. Each 2K-Byte page has the two area, one is the main area which is 2048-bytes and the other is spare area which is 112-byte. There are five (for 2Gb/4Gb) address cycles for the address allocation, please refer to the lable below. Table 1-1. Address Allocation (for x8): MX30UFxG28AB Addresses IO7 IO6 IO5 IO4 IO3 IO2 IO1 IO0 Column address - 1st cycle Column address - 2nd cycle Row address - 3rd cycle Row address - 4th cycle Row address - 5th cycle A7 L A19 A27 L A6 L A181 A26 L A5 L A17 A25 L A4 L A16 A24 L A3 A11 A15 A23 L A2 A10 A14 A22 L A1 A9 A13 A21 A292 A0 A8 A12 A20 A28 Notes: 1. A18 is the plane selection for 2Gb/4Gb. 2. A28 is for 2Gb and 4Gb. 3. A29 is for 4Gb, "L" (Low) for 2Gb. 4. The 5th cycle is for the 2Gb/4Gb. Table 1-2. Address Allocation (for x16): MX30UFxG26AB Addresses IO15-IO8 IO7 IO6 IO5 IO4 IO3 IO2 IO1 IO0 Column address - 1st cycle Column address - 2nd cycle Row address - 3rd cycle Row address - 4th cycle Row address - 5th cycle4 L L L L L A7 L A18 A26 L A6 L A171 A25 L A5 L A16 A24 L A4 L A15 A23 L A3 L A14 A22 L A2 A10 A13 A21 L A1 A9 A12 A20 A283 A0 A8 A11 A19 A272 Notes: 1. A17 is the plane selection for 2Gb/4Gb. 2. A27 is for 2Gb and 4Gb. 3. A28 is for 4Gb, "L" (Low) for 2Gb. 4. The 5th cycle is for the 2Gb/ 4Gb. P/N: PM2031 REV. 1.0, MAY 29, 2014 16 MX30UF2G26(28)AB MX30UF4G26(28)AB 6. DEVICE OPERATIONS 6-1. Address Input/Command Input/Data Input Address input bus operation is for address input to select the memory address. The command input bus operation is for giving command to the memory. The data input bus is for data input to the memory device. Figure 2. AC Waveforms for Command / Address / Data Latch Timing CLE ALE CE# tCS / / tCLS / tALS tCH tCLH tWP WE# tDS tDH IO[x:0] Figure 3. AC Waveforms for Address Input Cycle tCLS CLE tWC tWC tWC tWC CE# tWP tWH tWP tWH tWP tWH tWP tWH tWP WE# tALS tALH ALE tDS IO[x:0] tDH 1st Address Cycle tDS tDH 2nd Address Cycle P/N: PM2031 tDS tDH 3rd Address Cycle tDS tDH 4th Address Cycle tDS tDH 5th Address Cycle REV. 1.0, MAY 29, 2014 17 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 4. AC Waveforms for Command Input Cycle CLE tCLS tCLH tCS tCH CE# tWP WE# tALS tALH ALE tDS tDH IO[x:0] Figure 5. AC Waveforms for Data Input Cycle tCLH CLE tCH CE# tWC tWP tWH tWP tWH tWP tWP WE# ALE tALS tDS IO[x:0] tDH Din0 tDS tDH Din1 P/N: PM2031 tDS tDH Din2 tDS tDH DinN REV. 1.0, MAY 29, 2014 18 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-2. Page Read The MX30UFxG26(28)AB array is accessed in Page of 2160 bytes or 1,080 words. External reads begins after the R/B# pin goes to READY. The Read operation may also be initiated by writing the 00h command and giving the address (column and row address) and being confirmed by the 30h command, the device begins the internal read operation and the chip enters busy state. The data can be read out in sequence after the chip is ready. Refer to the waveform for Read Operation as below. If the host side uses a sequential access time (tRC) of less than 30ns, the data can be latched on the next falling edge of RE# as the waveform of EDO mode (Figure 9-2). To access the data in the same page randomly, a command of 05h may be written and only column address following and then confirmed by E0h command. Figure 6. AC Waveforms for Read Cycle CLE tCLS tCLS tCLH tCLH tCS CE# tWC WE# tALS tAR tALH tALH ALE tRR tR tRC tOH RE# tWB tDS IO[x:0] 00h tDH tDS tDH 1st Address Cycle tDS tDH 2nd Address Cycle tDS tDH 3rd Address Cycle tDS tDH 4th Address Cycle tDS tDH 5th Address Cycle tREA tDS tDH Dout 30h Dout R/B# Busy P/N: PM2031 REV. 1.0, MAY 29, 2014 19 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 7. AC Waveforms for Read Operation (Intercepted by CE#) CLE tCHZ CE# WE# tAR ALE tOH tRC RE# tRR tR tWB IO[x:0] 00h 1st Address Cycle 2nd Address Cycle 3rd Address Cycle 4th Address Cycle 5th Address Cycle 30h Dout 0 Dout 1 Dout 2 Dout 3 R/B# Busy P/N: PM2031 REV. 1.0, MAY 29, 2014 20 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 8. AC Waveforms for Read Operation (with CE# Don't Care) CLE CE# Don’t Care CE# WE# ALE RE# IO[x:0] Start Addr (5 Cycles) 00h Data Output (Sequential) 30h R/B# Busy Note: The CE# "Don't Care" feature may simplify the system interface, which allows controller to directly download the code from flash device, and the CE# transitions will not stop the read operation during the latency time. Figure 9-1. AC Waveforms for Sequential Data Out Cycle (After Read) t CEA CE# tRC tRP RE# t REH t RP t RHZ tREA IO[x:0] tOH Dout0 t REH t RP tRHZ t REA tOH Dout1 t REA t RP tCOH t CHZ t RHZ tRHZ t OH tOH Dout2 DoutN tRR R/B# P/N: PM2031 REV. 1.0, MAY 29, 2014 21 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 9-2. AC Waveforms for Sequential Data Out Cycle (After Read) - EDO Mode t CEA CE# tRC tRP RE# t REH tRHZ t REA IO[x:0] t RP tRLOH t Dout0 t REH tRHZ REA t RP tRLOH t Dout1 t RP t REH t CHZ t COH tRHZ REA t RLOH Dout2 tOH DoutN tRR R/B# P/N: PM2031 REV. 1.0, MAY 29, 2014 22 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 10. AC Waveforms for Random Data Output A tCLR CLE CE# WE# tAR ALE tRC RE# tRHW tRR tR tWB IO[x:0] 00h 1st Address Cycle 2nd Address Cycle 3rd Address Cycle 4th Address Cycle 5th Address Cycle Dout M 30h Dout M+1 05h R/B# CLE Busy A CE# WE# tWHR ALE RE# tREA IO[x:0] 05h 1st Address Cycle 2nd Address Cycle E0h Dout N Dout N+1 R/B# Repeat if needed P/N: PM2031 REV. 1.0, MAY 29, 2014 23 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-3. Cache Read Sequential The cache read sequential operation is for throughput enhancement by using the internal cache buffer. It allows the consecutive pages to be read-out without giving next page address, which reduces the latency time from tR to tRCBSY between pages or blocks. While the data is read out on one page, the data of next page can be read into the cache buffer. After writing the 00h command, the column and row address should be given for the start page selection, and followed by the 30h command for address confirmation. After that, the CACHE READ operation starts after a latency time tR and following a 31h command with the latency time of tRCBSY, the data can be readout sequentially from 1st column address (A[11:0]=00h) without giving next page address input. The 31h command is necessary to confirm the next cache read sequential operation and followed by a tRCBSY latency time before next page data is necessary. The CACHE READ SEQUENTIAL command is also valid for the consecutive page cross block. The random data out (05h-E0h) command set is available to change the column address of the current page data in the cache register. The user can check the chip status by the following method: - R/B# pin ("0" means the data is not ready, "1" means the user can read the data) - Status Register (SR[6] functions the same as R/B# pin, SR[5] indicates the internal chip operation, "0" means the chip is in internal operation and "1" means the chip is idle.) Status Register can be checked after the Read Status command (70h) is issued. Command 00h should be given to return to the cache read sequential operation. To confirm the last page to be read-out during the cache read sequential operation, a 3Fh command is needed to replace the 31h command prior to the last data-out. P/N: PM2031 REV. 1.0, MAY 29, 2014 24 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 11-1. AC Waveforms for Cache Read Sequential A tCLR CLE CE# WE# tAR ALE tRC RE# tRR tR tWB tWB IO[x:0] 00h 1st Address Cycle 2nd Address 3rd Address Cycle Cycle 4th Address Cycle 5th Address Cycle 1st Address Cycle 00h 30h 2nd Address Cycle 3rd Address Cycle 4th Address Cycle 5th Address Cycle tRCBSY Page n Dout 0 31h Page n Dout 1 Page n Dout 2111 Page m address Page n address R/B# Busy Busy A CLE tCLR CE# WE# tAR ALE tRC RE# tRR tWB IO[x:0] Page n Dout 0 Page n Dout 1 Page n Dout 2111 00h 1st Address Cycle 2nd Address 3rd Address Cycle Cycle 4th Address Cycle 5th Address Cycle tRCBSY Page m Dout 0 31h Page m Dout 1 Page m Dout 2111 Page x address R/B# Busy P/N: PM2031 REV. 1.0, MAY 29, 2014 25 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-4. Cache Read Random The main difference from the Cache Read Sequential operation is the Cache Read Random operation may allow the random page to be read-out with cache operation not just for the consecutive page only. After writing the 00h command, the column and row address should be given for the start page selection, and followed by the 30h command for address confirmation. The column address is ignored in the cache read random operation. And then, the CACHE READ RANDOM operation starts after a latency time tR and following a 00h command with the selected page address and following a 31h command, the data can be read-out after the latency time of tRCBSY. After the previous selected page data out, a new selected page address can be given by writing the 00h-31h command set again. The CACHE READ RANDOM command is also valid for the consecutive page cross block. The random data out (05h-E0h) command set is available to change the column address of the current page data in the cache register. The user can check the chip status by the following method: - R/B# pin ("0" means the data is not ready, "1" means the user can read the data) - Status Register can be checked after the Read Status command (70h) is issued. (SR[6] behaves the same as R/B# pin, SR[5] indicates the internal chip operation, "0" means the chip is in internal operation and "1" means the chip is idle.) Command 00h should be given to return to the cache read operation. To confirm the last page to be read-out during the cache read operation, a 3Fh command is needed to replace the 31h command prior to the last data-out. P/N: PM2031 REV. 1.0, MAY 29, 2014 26 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 11-2. AC Waveforms for Cache Read Random A tCLR CLE CE# WE# tAR ALE tRC RE# tRR tR tWB tWB IO[x:0] 00h 1st Address Cycle 2nd Address 3rd Address Cycle Cycle 4th Address Cycle 5th Address Cycle 1st Address Cycle 00h 30h 2nd Address 3rd Address Cycle Cycle 4th Address Cycle 5th Address Cycle tRCBSY Page n Dout 0 31h Page n Dout 1 Page n Dout 2111 Page m address Page n address R/B# Busy Busy A CLE tCLR CE# WE# tAR ALE tRC RE# tRR tWB IO[x:0] Page n Dout 0 Page n Dout 1 Page n Dout 2111 00h 1st Address Cycle 2nd Address 3rd Address Cycle Cycle 4th Address Cycle 5th Address Cycle tRCBSY Page m Dout 0 31h Page m Dout 1 Page m Dout 2111 Page x address R/B# Busy P/N: PM2031 REV. 1.0, MAY 29, 2014 27 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-5. Page Program The memory is programmed by page, which is 2,160 bytes, or 1080 words. After Program load command (80h) is issued and the row and column address is given, the data will be loaded into the chip sequentially. Random Data Input command (85h) allows multi-data load in non-sequential address. After data load is complete, program confirm command (10h) is issued to start the page program operation. The page program operation in a block should start from the low address to high address. Partial program in a page is allowed up to 4 times. However, the random data input mode for programming a page is allowed and number of times is not limited. The status of the program completion can be detected by R/B# pin or Status register bit SR[6]. The program result is shown in the chip status bit (SR[0]). SR[0] = 1 indicates the Page Program is not successful and SR[0] = 0 means the program operation is successful. During the Page Program progressing, only the read status register command and reset command are accepted, others are ignored. Figure 12. AC Waveforms for Program Operation after Command 80H CLE tCLS tCLH CE# tCS tWC WE# tALS tWB tALH tALH ALE RE# tDS tDH IO[x:0] 80h tDS/tDH Din 0 - 1st Address Cycle 2nd Address 3rd Address 4th Address 5th Address Cycle Cycle Cycle Cycle Din n 10h 70h Status Output tPROG R/B# P/N: PM2031 REV. 1.0, MAY 29, 2014 28 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 13. AC Waveforms for Random Data In (For Page Program) A CLE CE# tWC tADL WE# ALE RE# IO[x:0] 80h 1st Address 2nd Address 3rd Address 4th Address 5th Address Cycle Cycle Cycle Cycle Cycle Din A Din A+N R/B# A CLE CE# tWC tADL WE# tWB ALE RE# IO[x:0] 85h 1st Address 2nd Address Cycle Cycle Din B+M Din B 70h 10h Status tPROG R/B# Repeat if needed IO0 = 0; Pass IO0 = 1; Fail Note: Random Data In is also supported in cache program. P/N: PM2031 REV. 1.0, MAY 29, 2014 29 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 14. AC Waveforms for Program Operation with CE# Don't Care A CLE CE# WE# ALE IO[x:0] Start Add. (5 Cycles) 80h Data Input A CLE CE# WE# ALE IO[x:0] Data Input Data Input 10h Note: The CE# "Don't Care" feature may simplify the system interface, which allows the controller to directly write data into flash device, and the CE# transitions will not stop the program operation during the latency time. P/N: PM2031 REV. 1.0, MAY 29, 2014 30 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-6. Cache Program The cache program feature enhances the program performance by using the cache buffer of 2,160-byte or 1080 words. The serial data can be input to the cache buffer while the previous data stored in the buffer are programming into the memory cell. Cache Program command sequence is almost the same as page program command sequence. Only the Program Confirm command (10h) is replaced by cache Program command (15h). After the Cache Program command (15h) is issued. The user can check the status by the following methods. - R/B# pin - Cache Status Bit (SR[6] = 0 indicates the cache is busy; SR[6] = 1 means the cache is ready). The user can issue another Cache Program Command Sequence after the Cache is ready. The user can always monitor the chip state by Ready/Busy Status Bit (SR[5]). The user can issues either program confirm command (10h) or cache program command (15h) for the last page if the user monitor the chip status by issuing Read Status Command (70h). However, if the user only monitors the R/B# pin, the user needs to issue the program confirm command (10h) for the last page. The user can check the Pass/Fail Status through P/F Status Bit (SR[0]) and Cache P/F Status Bit (SR[1]). SR[1] represents Pass/Fail Status of the previous page. SR[1] is updated when SR[6] change from 0 to 1 or Chip is ready. SR[0] shows the Pass/Fail status of the current page. It is updated when SR[5] change from "0" to "1" or the end of the internal programming. For more details, please refer to the related waveforms. P/N: PM2031 REV. 1.0, MAY 29, 2014 31 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 15-1. AC Waveforms for Cache Program A CLE CE# tADL tWC WE# tWB ALE RE# IO[x:0] 80h 1st Address Cycle 2nd Address Cycle 3rd Address Cycle 4th Address Cycle 5th Address Cycle Din Din 15h tCBSY R/B# Busy A CLE CE# tADL WE# tWB ALE RE# IO[x:0] 80h 1st Address Cycle 2nd Address Cycle 3rd Address Cycle 4th Address Cycle 5th Address Cycle Din Din 70h 10h Status Output tPROG R/B# Note Busy Note: It indicates the last page Input & Program. P/N: PM2031 REV. 1.0, MAY 29, 2014 32 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 15-2. AC Waveforms for Sequence of Cache Program A IO[x:0] 1st Address 2nd Address 3rd Address 4th Address 5th Address Cycle Cycle Cycle Cycle Cycle 80h Din Din 15h 80h 1st Address 2nd Address 3rd Address 4th Address 5th Address Cycle Cycle Cycle Cycle Cycle Din Din 15h 80h R/B# Busy - tCBSY Busy - tCBSY A IO[x:0] 80h 1st Address 2nd Address 3rd Address 4th Address 5th Address Cycle Cycle Cycle Cycle Cycle Din Din 15h 80h 1st Address 2nd Address 3rd Address 4th Address 5th Address Cycle Cycle Cycle Cycle Cycle Din Din 10h 70h R/B# Busy - tCBSY Busy - tPROG Note: tPROG = Page(Last) programming time + Page (Last-1) programming time - Input cycle time of command & address - Data loading time of page (Last). Note 2 P/N: PM2031 REV. 1.0, MAY 29, 2014 33 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-7. Block Erase The MX30UFxG26(28)AB supports a block erase command. This command will erase a block of 64 pages associated with the most significant address bits. The completion of the erase operation can be detected by R/B# pin or Status register bit (IO6). Recommend to check the status register bit IO0 after the erase operation completes. During the erasing process, only the read status register command and reset command can be accepted, others are ignored. Figure 16. AC Waveforms for Erase Operation CLE tCLS tCLH CE# tCS tWC WE# tALH tALS ALE tWB RE# tDS IO[x:0] tDH tDS tDH tDS tDH 60h tDS tDH 70h D0h 3rd Address Cycle 4th Address Cycle 5th Address Cycle Stauts Output tERASE R/B# P/N: PM2031 REV. 1.0, MAY 29, 2014 34 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-8. ID Read The device contains ID codes that identify the device type and the manufacturer. The ID READ command sequence includes one command Byte (90h), one address byte (00h). The Read ID command 90h may provide the manufacturer ID (C2h) of one-byte and device ID (AAh for 2Gb, x8; BAh for 2Gb, X16; ACh for 4Gb, X8; BCh for 4Gb, X16) of one-byte, also Byte2, Byte3, and Byte4 ID code are followed. The device support ONFI Parameter Page Read, by sending the ID Read (90h) command and following one byte address (20h), the four-byte data returns the value of 4Fh-4Eh-46h-49h for the ASCII code of "O"-"N""F"-"I" to identify the ONFI parameter page. Table 2. ID Codes Read Out by ID Read Command 90H 2Gb Byte0-Manufacturer Byte1: Device ID Byte2 2Gb, x8, 1.8V C2h AAh 90h 2Gb, x16, 1.8V C2h BAh 90h Byte3 Byte4 4Gb Byte0-Manufacturer Byte1: Device ID Byte2 Byte3 Byte4 15h 07h 4Gb, x8, 1.8V C2h ACh 90h 15h 57h 55h 07h 4Gb, x16, 1.8V C2h BCh 90h 55h 57h P/N: PM2031 REV. 1.0, MAY 29, 2014 35 MX30UF2G26(28)AB MX30UF4G26(28)AB Table 3. The Definition of Byte2~Byte4 of ID Table Terms Description IO7 IO6 IO5 IO4 IO3 IO2 IO1 IO0 0 0 0 1 0 1 1 1 Byte 2 Die# per CE 1 2 Cell type SLC # of Simultaneously Programmed page 1 0 0 2 0 1 Interleaved operations between Multiple die Cache Program Byte 3 Page size Spare area size Block size (without spare) Organization Sequential access (min.) Byte 4 ECC level requirement #Plane per CE Plane size Reserved 0 Not supported Supported 2KB 28B 128KB x8 25ns 20ns 0 0 1 1 0 1 0 0 1 8-bit ECC/540B 1 2 4 1Gb 2Gb 0 0 0 0 1 0 1 0 0 0 1 0 0 1 0 P/N: PM2031 REV. 1.0, MAY 29, 2014 36 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 17-1. AC Waveforms for ID Read Operation CLE tCLS tCS CE# tCHZ WE# tALH tALS tAR ALE tOH RE# tWHR tDS IO[x:0] 90h tREA tDH 00h C2h (note) (note) (note) (note) Note: See also Table 2. ID Codes Read Out by ID Read Command 90H. Figure 17-2. AC Waveforms for ID Read (ONFI Identifier) Operation CLE tCLS tCS CE# tCHZ WE# tALH tALS tAR ALE tOH RE# tWHR tDS IO[x:0] 90h tDH 20h tREA 4Fh P/N: PM2031 4Eh 46h 49h REV. 1.0, MAY 29, 2014 37 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-9. Status Read The MX30UFxG26(28)AB provides a status register that outputs the device status by writing a command code 70h, and then the IO pins output the status at the falling edge of CE# or RE# which occurs last. Even though when multiple flash devices are connecting in system and the R/B#pins are common-wired, the two lines of CE# and RE# may be checked for individual devices status separately. The status read command 70h will keep the device at the status read mode unless next valid command is issued. The resulting information is outlined in Table 4 as below. Table 4. Status Output Pin SR[0] SR[1] SR[2-4] SR[5] SR[6] SR[7] Status Chip Status Cache Program Result Not Used Related Mode Page Read, Cache Read, Page Program, Cache Program (Page N), Block Erase Cache Program (Page N-1) Cache Program/Cache Ready / Busy Read operation, other Page (For P/E/R Controller) Program/Block Erase/Read are same as IO6 (Note 1) Page Program, Block Erase, Ready / Busy Cache Program, Read, Cache Read (Note 2) Page Program, Block Erase, Write Protect Cache Program, Read Value 0: Passed 1: Failed 0: Passed 1: Failed 0: Busy 1: Ready 0: Busy 1: Ready 0: Protected 1: Unprotected Notes: 1. During the actual programming operation, the SR[5] is "0" value; however, when the internal operation is completed during the cache mode, the SR[5] returns to "1". 2. The SR[6] returns to "1" when the internal cache is available to receive new data. The SR[6] value is consistent with the R/B#. P/N: PM2031 REV. 1.0, MAY 29, 2014 38 MX30UF2G26(28)AB MX30UF4G26(28)AB The following is an example of a HEX data bit assignment: Figure 18. Bit Assignment (HEX Data) Status Read: 70h 0 1 1 1 0 0 0 0 SR7 6 5 4 3 2 1 SR0 Figure 19. AC Waveforms for Status Read Operation tCLR CLE tCLS tCLH CE# tCS tWP WE# tCHZ tWHR RE# tOH tIR tDS tDH IO[x:0] tREA Status Output 70h P/N: PM2031 REV. 1.0, MAY 29, 2014 39 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-10. Status Enhance Read The 2Gb and 4Gb support the two-plane operation, the Status Enhanced Read command (78h) offers the alternative method besides the Status Read command to get the status of specific plane in the same NAND Flash device. The result information is outlined in Table 4-1 and Table 4-2. The [SR]6 and SR[5] bits are shared with all planes. However, the SR[0], SR[1], SR[3], SR[4] are for the status of specific plane in the row address. The Status Enhanced Read command is not allowed at power-on Reset (FFh) command, OTP enabled operation. Figure 20. AC Waveforms for Status Enhance Operation CLE tCLS tCS CE# tCHZ WE# tALH tALS tAR ALE tOH RE# tWHR tDS IO[x:0] 78h tREA tDH 3rd Address Cycle 4th Address Cycle P/N: PM2031 5th Address Cycle Status Output REV. 1.0, MAY 29, 2014 40 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-11. Reset The reset command FFh resets the read/program/erase operation and clear the status register to be E0h after chip returns to ready state (when WP# is high). The reset command during the program/erase operation will result in the content of the selected locations(perform programming/erasing) might be partially programmed/ erased. If the Flash memory has already been set to reset stage with reset command, the additional new reset command is invalid. Figure 21. AC waveforms for Reset Operation CLE CE# WE# ALE RE# tWB IO[x:0] FFh tRST R/B# P/N: PM2031 REV. 1.0, MAY 29, 2014 41 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-12. Parameter Page Read (ONFI) The NAND Flash device support ONFI Parameter Page Read and the parameter can be read out by sending the command of ECh and giving the address 00h. The NAND device information may refer to the table of parameter page(ONFI), there are three copies of 256-byte data and additional redundant parameter pages. Once sending the ECh command, the NAND device will remain in the Parameter Page Read mode until next valid command is sent. The Random Data Out command set (05h-E0h) can be used to change the parameter location for the specific parameter data random read out. The Status Read command (70h) can be used to check the completion with a following read command (00h) to enable the data out. Figure 22. AC waveforms for Parameter Page Read (ONFI) Operation tCLR CLE CE# WE# tAR ALE tRC RE# tRR tWB tR IO[x:0] ECh Parameter 0 Dout 0 00h Parameter 0 Dout 1 Parameter 0 Dout 255 Parameter 1 Dout 0 R/B# Busy P/N: PM2031 REV. 1.0, MAY 29, 2014 42 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 23. AC Waveforms for Parameter Page Read (ONFI) Random Operation (For 05h-E0h) tCLR CLE CE# WE# tWHR tAR ALE tRC RE# tRR tWB tR IO[x:0] ECh tREA Parameter 0 Dout 0 00h Parameter 0 Dout 1 05h R/B# 1st Address Cycle 2nd Address Cycle E0h Parameter m Dout n Parameter m Dout n+1 Repeat if needed Busy P/N: PM2031 REV. 1.0, MAY 29, 2014 43 MX30UF2G26(28)AB MX30UF4G26(28)AB Table 5. Parameter Page (ONFI) Byte# Revision Information and Features Block Description Data 0-3 4-5 Parameter Page Signature Revision Number 6-7 Features Supported 8-9 10-31 Optional Commands Supported Reserved Manufacturer Information Block Description Data Byte# 32-43 2Gb, x8 2Gb, x16 4Gb, x8 4Gb, x16 2Gb 4Gb Device Manufacturer (12 ASCII characters) MX30UF2G28AB 44-63 Device Model (20 ASCII Characters) MX30UF2G26AB MX30UF4G28AB MX30UF4G26AB 64 65-66 67-79 4Fh, 4Eh, 46h, 49h 02h, 00h 18h, 00h 19h, 00h 18h, 00h 19h, 00h 3Fh, 00h 3Fh, 00h 00h JEDEC Manufacturer ID Date Code Reserved P/N: PM2031 4Dh,41h,43h,52h,4Fh,4Eh,49h,58h, 20h,20h,20h,20h 4Dh,58h,33h,30h,55h,46h,32h,47h, 32h,38h,41h,42h,20h,20h,20h,20h,2 0h,20h,20h,20h, 4Dh,58h,33h,30h,55h,46h,32h,47h, 32h,36h,41h,42h,20h,20h,20h,20h,2 0h,20h,20h,20h, 4Dh,58h,33h,30h,55h,46h,34h,47h, 32h,38h,41h,42h,20h,20h,20h,20h,2 0h,20h,20h,20h, 4Dh,58h,33h,30h,55h,46h,34h,47h,3 2h,36h,41h,42h,20h,20h,20h,20h,20 h,20h,20h,20h, C2h 00h, 00h 00h REV. 1.0, MAY 29, 2014 44 MX30UF2G26(28)AB MX30UF4G26(28)AB Byte# Memory Organization Block Description 80-83 84-85 86-89 90-91 92-95 Number of Data Bytes per Page Number of Spare Bytes per Page Number of Data Bytes per Partial Page Number of Spare Bytes per Partial Page Number of Pages per Block 96-99 Number of Blocks per Logical Unit 100 Number of Logical Units (LUNs) 101 Number of Address Cycles 102 Number of Bits per Cell 2048-byte 112-byte 512-byte 28-byte 2Gb 4Gb 2Gb 4Gb 2Gb 4Gb 103-104 Bad Blocks Maximum per LUN 105-106 107 108-109 110 111 112 Block endurance Guarantee Valid Blocks at Beginning of Target Block endurance for guaranteed valid blocks Number of Programs per Page Partial Programming Attributes Number of Bits ECC Correctability 113 Number of Interleaved Address Bits 114 Interleaved Operation Attributes 115-127 Reserved Byte# 128 2Gb 4Gb 2Gb 4Gb Electrical Parameters Block Description Data 00h,08h,00h,00h 70h,00h 00h,02h,00h,00h 1Ch,00h 40h,00h,00h,00h 00h,08h,00h,00h 00h,10h,00h,00h 01h 23h 23h 01h 28h,00h 50h,00h 01h, 05h 01h 01h, 03h 04h 00h 08h 01h 01h 0Eh 0Eh 00h Data I/O Pin Capacitance 0Ah 129-130 Timing Mode Support 131-132 Program Cache Timing Mode Support 25ns 25ns 1Fh,00h 1Fh,00h 133-134 tPROG Maximum Page Program Time (uS) 600us 58h,02h 135-136 tBERS(tERASE) Maximum Block Erase Time (uS) 3,500us ACh,0Dh 137-138 tR Maximum Page Read Time (uS) 25us 19h,00h 139-140 tCCS Minimum Change Column Setup Time (ns) 80ns 50h,00h 141-163 Reserved 00h P/N: PM2031 REV. 1.0, MAY 29, 2014 45 MX30UF2G26(28)AB MX30UF4G26(28)AB Vendor Blocks Description Byte# Data 164-165 Vendor Specific Revision Number 166-253 Vendor Specific 254-255 Integrity CRC 00h 00h Set at Test (Note) Byte# Data Redundant Parameter Pages Description 256-511 Value of Bytes 0-255 512-767 Value of Bytes 0-255 768+ Additional Redundant Parameter Pages Note: The Integrity CRC (Cycling Redundancy Check) field is used to verify that the contents of the parameters page were transferred correctly to the host. Please refer to ONFI 1.0 specifications for details. The CRC shall be calculated using the following 16-bit generator polynomial: G(X) = X16 + X15 +X2 + 1 6-13. Unique ID Read (ONFI) The unique ID is 32-byte and with 16 copies for back-up purpose. After writing the Unique ID read command (EDh) and following the one address byte (00h), the host may read out the unique ID data. The host need to XOR the 1st 16-byte unique data and the 2nd 16-byte complement data to get the result, if the result is FFh, the unique ID data is correct; otherwise, host need to repeat the XOR with the next copy of Unique ID data. Once sending the EDh command, the NAND device will remain in the Unique ID read mode until next valid command is sent. To change the data output location, it is recommended to use the Random Data Out command set (05h-E0h). The Status Read command (70h) can be used to check the completion. To continue the read operation, a following read command (00h) to re-enable the data out is necessary. P/N: PM2031 REV. 1.0, MAY 29, 2014 46 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 24. AC waveforms for Unique ID Read Operation tCLR CLE CE# WE# tAR ALE tRC RE# tRR tWB tR IO[x:0] EDh Unique ID 0 Dout 0 00h Unique ID 0 Dout 1 Unique ID 0 Dout 31 Unique ID 1 Dout 0 R/B# Busy P/N: PM2031 REV. 1.0, MAY 29, 2014 47 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 25. AC waveforms for Unique ID Read Operation (For 05h-E0h) tCLR CLE CE# WE# tWHR tAR ALE tRC RE# tRR tWB tR IO[x:0] EDh tREA Unique ID 0 Dout 0 00h Unique ID 0 Dout 1 05h R/B# 1st Address Cycle 2nd Address Cycle E0h Unique ID m Dout n Unique ID m Dout n+1 Repeat if needed Busy P/N: PM2031 REV. 1.0, MAY 29, 2014 48 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-14. Feature Set Operation (ONFI) The Feature Set operation is to change the default power-on feature sets by using the Set Feature and Get Feature command and writing the specific parameter data (P1-P4) on the specific feature addresses. The NAND device may remain the current feature set until next power cycle since the feature set data is volatile. However, the reset command (FFh) can not reset the current feature set. Table 6-1. Definition of Feature Address Feature Address 00h 01h 02h-7Fh 80h 81h 82h-8Fh, 91h-FFh 90h Description Reserved Timing Mode Reserved Programmable I/O Drive Strength Programmable R/B# pull-down Strength Reserved Array Operation Mode Table 6-2. Sub-Feature Parameter Table of Feature Address - 01h (Timing Mode) Sub Feature Parameter P1 P2 P3 P4 Note 1. Definition Mode 0 (Default) Mode 1 Mode 2 Timing Mode Mode 3 Mode 4 Mode 5 IO7 IO6 IO5 IO4 Reserved (0) Reserved (0) Reserved (0) Reserved (0) IO3 IO2 IO1 0 0 0 0 1 1 0 0 1 1 0 0 IO0 Values Notes 0 1 0 1 0 1 00h 01h 02h 03h 04h 05h 00h 00h 00h 1 1 1 1 1 1 Please refer to ONFI standard for detail specifications on Mode 0,1,2,3,4,5. P/N: PM2031 REV. 1.0, MAY 29, 2014 49 MX30UF2G26(28)AB MX30UF4G26(28)AB Table 6-3. Sub-Feature Parameter Table of Feature Address - 80h (Programmable I/O Drive Strength) Sub Feature Parameter P1 Definition I/O Drive Strength P2 P3 P4 IO7 IO6 Full( Default) 3/4 1/2 1/4 IO5 IO4 IO3 IO2 IO1 0 0 1 1 Reserved (0) Reserved (0) Reserved (0) Reserved (0) IO0 Values Notes 0 1 0 1 00h 01h 02h 03h 00h 00h 00h 1 Note 1. If the I/O Drive strength is not full, the AC spec might need to be relaxed. Table 6-4. Sub-Feature Parameter Table of Feature Address- 81h (Programmable R/B# pull-down Strength) Sub Feature Parameter P1 P2 P3 P4 Definition R/B# Pull-down Strength IO7 IO6 Full (Default) 3/4 1/2 1/4 IO5 IO4 IO3 IO2 IO1 0 0 1 1 Reserved (0) Reserved (0) Reserved (0) Reserved (0) IO0 Values Notes 0 1 0 1 00h 01h 02h 03h 00h 00h 00h Table 6-5. Sub-Feature Parameter Table of Feature Address - 90h (Array Operation Mode) Sub Feature Parameter Definition P1 Normal Array Operation OTP Operation Mode OTP Protection P2 P3 P4 IO7 IO6 IO5 IO4 IO3 IO2 IO1 IO0 Reserved (0) Reserved (0) x 0 Reserved (0) x 0 Reserved (0) Reserved (0) Reserved (0) 0 0 1 Values 0 0000 0000b 1 0000 x001b 1 0000 x011b 0000 0000b 0000 0000b 0000 0000b Notes 1 Note 1. The value is clear to 00h at power cycle. P/N: PM2031 REV. 1.0, MAY 29, 2014 50 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-14-1. Set Feature (ONFI) The Set Feature command is to change the power-on default feature set. After sending the Set Feature command (EFh) and following specific feature and then input the P1-P4 parameter data to change the default power-on feature set. Once sending the EFh command, the NAND device will remain in the Set Feature mode until next valid command is sent. The Status Read command (70h) may check the completion of the Set Feature. Figure 26. AC Waveforms for Set Feature (ONFI) Operation CLE CE# tADL tWC WE# tWB ALE RE# IO[x:0] EFh Feature Address Din Din Din Din tFEAT R/B# Busy P/N: PM2031 REV. 1.0, MAY 29, 2014 51 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-14-2. Get Feature (ONFI) The Get Feature command is to read sub-feature parameter. After sending the Get Feature command (EEh) and following specific feature, the host may read out the P1-P4 sub- feature parameter data. Once sending the EEh command, the NAND device will remain in the Get Feature mode until next valid command is sent. The Status Read command (70h) can be used to check the completion. To continue the read operation, a following read command (00h) to re-enable the data out is necessary. Please refer to the following waveform of Get Feature Operation for details. Figure 27. AC Waveforms for Get Feature (ONFI) Operation tCLR CLE CE# WE# tAR ALE tRC RE# tRR tWB tFEAT IO[x:0] EEh Feature Address Feature Dout 0 Feature Dout 1 Feature Dout 2 Feature Dout 3 R/B# Busy P/N: PM2031 REV. 1.0, MAY 29, 2014 52 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-14-3. Secure OTP (One-Time-Programmable) Feature There is an OTP area which has thirty full pages (30 x 2,160-byte) guarantee to be good for system device serial number storage or other fixed code storage. The OTP area is a non-erasable and one-timeprogrammable area, which is default to “1” and allows whole page or partial page program to be “0”, once the OTP protection mode is set, the OTP area becomes read-only and cannot be programmed again. The OTP operation is operated by the Set Feature/ Get Feature operation to access the OTP operation mode and OTP protection mode. To check the NAND device is ready or busy in the OTP operation mode, either checking the R/B# or writing the Status Read command (70h) may collect the status. To exit the OTP operation or protect mode, it can be done by writing 00h to P1 at feature address 90h. OTP Read/Program Operation To enter the OTP operation mode, it is by using the Set Feature command (EFh) and followed by the feature address (90h) and then input the 01h to P1 and 00h to P2-P4 of sub-Feature Parameter data( please refer to the sub-Feature Parameter table). After enter the OTP operation mode, the normal Read command (00h-30h) or Page program( 80h-10h) command can be used to read the OTP area or program it. The address of OTP is located on the 02h-1Fh of page address. Besides the normal Read command, the Random Data Output command (05h-E0h) can be used for read OTP data. However, the Cache Read command is not supported in the OTP area. Besides the normal page program command, the Random Data Input command (85h) allows multi-data load in non-sequential address. After data load is completed, a program confirm command (10h) is issued to start the page program operation. The number of partial-page OTP program is 8 per each OTP page. Figure 28. AC Waveforms for OTP Data Read tCLR CLE CE# WE# tAR ALE tRC RE# tRR tR tWB IO[x:0] 00h 1st Address 2nd Address Cycle Cycle OTP Page 00h 00h Dout 0 30h Dout 1 Dout n R/B# Busy P/N: PM2031 REV. 1.0, MAY 29, 2014 53 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 29. AC Waveforms for OTP Data Read with Random Data Output A tCLR CLE CE# WE# tAR ALE tRC RE# tRHW tRR tWB IO[x:0] 00h 1st Address Cycle 2nd Address Cycle OTP Page 00h 00h tR Dout M 30h Dout M+1 05h R/B# Busy CLE A CE# WE# tWHR ALE RE# tREA IO[x:0] 05h 1st Address Cycle 2nd Address Cycle E0h Dout N Dout N+1 R/B# Repeat if needed P/N: PM2031 REV. 1.0, MAY 29, 2014 54 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 30. AC Waveforms for OTP Data Program CLE CE# tADL WE# tWB ALE RE# IO[x:0] 80h 1st Address 2nd Address 3rd Address 4th Address Cycle Cycle Cycle Cycle 5th Address Cycle Din Din 70h 10h Status Output tPROG R/B# Busy P/N: PM2031 REV. 1.0, MAY 29, 2014 55 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 31. AC Waveforms for OTP Data Program with Random Data Input A CLE CE# tADL tWC WE# ALE RE# IO[x:0] 80h 1st Address 2nd Address Cycle Cycle OTP Page 00h 00h Din Din R/B# A CLE CE# tADL WE# tWB ALE RE# IO[x:0] 85h 1st Address 2nd Address Cycle Cycle Din Din 70h 10h Status Output tPROG R/B# Busy P/N: PM2031 REV. 1.0, MAY 29, 2014 56 MX30UF2G26(28)AB MX30UF4G26(28)AB OTP Protection Operation To prevent the further OTP data to be changed, the OTP protection mode operation is necessary. To enter the OTP protection mode, it can be done by using the Set Feature command (EFh) and followed by the feature address (90h) and then input the 03h to P1 and 00h to P2-P4 of sub-Feature Parameter data (please refer to the sub-Feature Parameter table). And then the normal page program command (80h-10h) with the address 00h before the 10h command is required. The OTP Protection mode is operated by the whole OTP area instead of individual OTP page. Once the OTP protection mode is set, the OTP area cannot be programmed or unprotected again. Figure 32. AC Waveforms for OTP Protection Operation CLE tCLS tCLH CE# tCS tWC WE# tALS tALH tWB tALH ALE RE# tDS tDH (Note) IO[x:0] - 80h 1st Address Cycle OTP Page 00h 00h 00h 10h 70h Status Output Dummy data input 2nd Address Cycle tPROG R/B# Note: This adress cycle can be any value since the OTP protection protects the entire OTP area instead of individual OTP page. P/N: PM2031 REV. 1.0, MAY 29, 2014 57 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-15. Two-Plane Operations The 2Gb/4Gb NAND device is divided into two planes for performance improvement. In the two-plane operation, the NAND device may proceed the same type operation (for example: Program or Erase) on the two planes concurrent or overlapped by the two-plane command sets. The different type operations cannot be done in the two-plane operations; for example, it cannot be done to erase one plane and program the other plane concurrently. The plane address A18 (for x8 bus) or A17 (for x16 bus) must be different from each selected plane address. The page address A12-A17(for x8 bus) or A11-A16 (for x16 bus) of individual plane must be the same for twoplane operation. The Status Read command( 70h) may check the device status in the two-plane operation, if the result is failed and then the Status Enhanced Read (78h) may check which plane is failed. P/N: PM2031 REV. 1.0, MAY 29, 2014 58 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-16. Two-plane Program (ONFI) and Two-plane Cache Program (ONFI) The two-plane program command (80h-11h) may input data to cache buffer and wait for the final plane data input with command (80h-10h) and then transfer all data to NAND array. As for the two-plane cache program operation, after the prior two-plane program command (80h-11h) is the cache program command (80h-15h) for the overhead time reduction. Please refer to the waveforms of two-plane program and two-plane cache program for details. The random data input command (85h) can be also used in the two-plane program operation for changing the column address, please refer to the waveform of two-plane program with random data input. Figure 33-1. AC Waveforms for Two-plane Program (ONFI) A CLE CE# tADL tWC WE# tWB ALE RE# IO[x:0] 80h 1st Address 2nd Address 3rd Address Cycle Cycle Cycle 4th Address Cycle 5th Address Cycle Din Din 11h tDBSY R/B# Busy A CLE CE# tADL WE# tWB ALE RE# IO[x:0] 80h 1st Address 2nd Address 3rd Address 4th Address Cycle Cycle Cycle Cycle 5th Address Cycle Din Din 70h 10h Status Output tPROG R/B# Busy P/N: PM2031 REV. 1.0, MAY 29, 2014 59 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 33-2. AC Waveforms for Page Program Random Data Two-plane (ONFI) A CLE CE# tADL tWC tADL tWC WE# tWB ALE RE# IO[x:0] 80h 1st Address 2nd Address 3rd Address 4th Address 5th Address Cycle Cycle Cycle Cycle Cycle Din Din 85h 1st Address 2nd Address Cycle Cycle Din Din 11h tDBSY R/B# Reapeat if needed Busy A CLE CE# tADL tADL tWC WE# tWB ALE RE# IO[x:0] 80h 1st Address 2nd Address 3rd Address 4th Address Cycle Cycle Cycle Cycle 5th Address Cycle Din 85h Din 1st Address 2nd Address Cycle Cycle Din Din 70h 10h Status Output tPROG R/B# Reapeat if needed P/N: PM2031 Busy REV. 1.0, MAY 29, 2014 60 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 34. AC Waveforms for Two-plane Cache Program (ONFI) A CLE CE# tADL tWC tADL tWC WE# tWB tWB ALE RE# IO[x:0] 80h 1st Address Cycle 2nd Address Cycle 3rd Address Cycle 4th Address Cycle 5th Address Cycle Din Din 1st Address Cycle 80h 11h 2nd Address Cycle 3rd Address Cycle 4th Address Cycle 5th Address Cycle tDBSY Plane 1 Din Din 15h tCBSY Plane 2 R/B# Busy Busy Repeat if needed A CLE CE# tADL tADL tWC WE# tWB tWB ALE RE# IO[x:0] 80h 1st Address Cycle 2nd Address Cycle 3rd Address Cycle 4th Address Cycle 5th Address Cycle Plane 1 Din Din 11h 80h tDBSY 1st Address Cycle 2nd Address Cycle 3rd Address Cycle 4th Address Cycle 5th Address Cycle Plane 2 Din Din 10h 70h Status Output tPROG R/B# Busy Busy P/N: PM2031 REV. 1.0, MAY 29, 2014 61 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-17. Two-plane Block Erase (ONFI) The two-plane erase command (60h-D1h) may erase the selected blocks in parallel from each plane, with setting the 1st and 2nd block address by (60h-D1h) & (60h-D0h) command and then erase two selected blocks from NAND array. Please refer to the waveforms of two-plane erase for details. Figure 35. AC Waveforms for Two-plane Erase (ONFI) CLE tCLS tCLS tCLH CE# tCLH tCS tWC WE# tALH tWC tALS tALH tALS ALE tWB RE# tDS IO[x:0] R/B# tDH tDS tDH tDS tDH tDS tWB tDH 60h tDS D1h 3rd Address Cycle 4th Address Cycle 5th Address Cycle tDH tDS tDH tDS tDH tDS tDH 60h 3rd Address Cycle tDBSY P/N: PM2031 70h D0h 4th Address Cycle 5th Address Cycle Stauts Output tERASE REV. 1.0, MAY 29, 2014 62 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-18. Block Protection The block protect operation can protect the whole chip or selected blocks from erasing or programming. Through the PT pin at power-on stage, it decides the block protect command is enabled or disabled. At power-on, if the PT pin is connected to high, the related Block Protect command sets are enabled; in contrast, if the PT pin is low, all the block protect command sets are disabled. If the PT pin is connected to high at power-on, all the blocks are default to be protected from programming/erasing even the WP# is disabled, the block un-protect command is necessary to un-protect those selected blocks before those selected blocks to be updated. Once the selected blocks are un-protected, those blocks can be protected again. Besides the Block protect operation, there is “Block Solid-Protect” command (2Ch) may provide a solid block protection; once the block is solid-protected, the block is protected from programming or erasing and cannot be upprotected until next power cycle. 6-18-1. Block Un-Protect When PT pin is connected to high at the power-on stage, all blocks are default to be protected from programming or erasing. The Block Un-Protect command set (23h-24h) may define the range of blocks to be un-protected. The Block Un-Protect Lower command (23h) may set the lower boundary address and followed by the Block Un-Protect Upper command (24h) setting the upper boundary address and the invert-bit to define the un-protect blocks range. The invert-bit defines the un-Protect block area, if the invert-bit is set to “0” which sets the un-Protected area is within the upper and lower boundary address; in contrast, the bit is set to “1” which means the un-protected area is outside the upper and lower boundary address. Please refer to the waveforms below for details. Table 7-1. Address Cycle Definition of Block Un-Protect (For x8) Address Cycle IO7 IO6 IO5 IO4 IO3 IO2 IO1 IO0 Block Address 1 A19 A18 L L L L L Invert Bit1 Block Address 2 A27 A26 A25 A24 A23 A22 A21 A20 Block Address 3 L L L L L L A29 A28 Note 1. The Invert bit is set by 24h command to decide the Un-protect range is inside or outside of the boundary. The bit can be H/L for 23h command. Table 7-2. Address Cycle Definition of Block Un-Protect (For x16) Address Cycle IO15-IO8 IO7 IO6 IO5 IO4 IO3 IO2 IO1 IO0 Block Address 1 L A18 A17 L L L L L Invert Bit 1 Block Address 2 L A26 A25 A24 A23 A22 A21 A20 A19 Block Address 3 L L L L L L L A28 A27 Note 1. The Invert bit is set by 24h command to decide the Un-protect range is inside or outside of the boundary. The bit can be H/L for 23h command. P/N: PM2031 REV. 1.0, MAY 29, 2014 63 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 36. Invert-Bit to Define Un-Protected Area Options Figure 37. AC Waveforms for Block Unprotection CLE CE# tWC WE# ALE WP# RE# IO[x:0] 23h Block address 0 Block address 1 Block address 2 24h Lower Boundary Block address 0 Block address 1 Block address 2 Upper Boundary R/B# P/N: PM2031 REV. 1.0, MAY 29, 2014 64 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-18-2. Block Protect When some blocks are un-protected by the Block Un-Protect command set (23h-24h), those blocks can be protected again from the program/erase operation by writing the Block Protect command (2Ah), which may protect all blocks together. Figure 38. AC Waveforms for Block Protection CLE CE# WE# ALE WP# RE# IO[x:0] 2Ah R/B# P/N: PM2031 REV. 1.0, MAY 29, 2014 65 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-18-3. Block Solid-Protect The Block Solid-Protect Command (2Ch) may firmly maintain the previous block protect status; which means the protected blocks cannot be un-protected and the un-protected blocks cannot be protected. Once the Block Solid-Protect command is set, only a new power cycle may change the states of blocks protection/unprotection. The WP# needs to be connected to high before writing the Block Solid-Protect command, and the command is valid only when the PT pin is connected to high. The Block Solid-Protect command was issued, only the un-protected blocks may accept the program/erase operation. To program or erase the protected block, the R/B# keeps low for the time of tLPSY, and the Status Read command (70h) may get the 60h result. Figure 39. AC Waveforms for Block Solid-Protect CLE CE# WE# ALE WP# RE# IO[x:0] 2Ch R/B# P/N: PM2031 REV. 1.0, MAY 29, 2014 66 MX30UF2G26(28)AB MX30UF4G26(28)AB 6-18-4. Block Protection Status Read The Block Protection Status Read command (7Ah) may check the protect/un-protect status of individual blocks. The address cycle is referred to Table 9-1. and 9-2. Address Cycle Definition of Block Un-Protect. Table 8. The Block-Protection Status Output Block-Protection Status IO[15:3] or IO[7:3] IO2(PT#) IO1(SP#) IO0(SP) x 0 0 1 x 0 1 0 x 1 0 1 x 1 1 0 Block is protected, and device is solid-protected Block is protected, and device is not solid-protected Block is un-protected, and device is solid-protected Block is un-protected, and device is not solid-protected Note: PT stands for Block Protection, SP stands for Solid-Protection. Figure 40. AC Waveforms for Block Protection Status Read CLE CE# tWC WE# tWHR ALE WP# RE# IO[x:0] 7Ah Block address 0 Block address 2 Block address 1 Status Output R/B# P/N: PM2031 REV. 1.0, MAY 29, 2014 67 MX30UF2G26(28)AB MX30UF4G26(28)AB 7. PARAMETERS 7-1. ABSOLUTE MAXIMUM RATINGS Temperature under Bias -50°C to +125°C Storage temperature -65°C to +150°C All input voltages with respect to ground (Note 2) -0.6V to 2.4V VCC supply voltage with respect to ground (Note 2) -0.6V to 2.4V ESD protection >2000V Notes: 1. Minimum voltage may undershoot to -2V for the period of time less than 20ns. 2. The reliability of device may be impaired by exposing to extreme maximum rating conditions for long range of time. 3. Permanent damage may be caused by the stresses higher than the "Absolute Maximum Ratings" listed. P/N: PM2031 REV. 1.0, MAY 29, 2014 68 MX30UF2G26(28)AB MX30UF4G26(28)AB Table 9. Operating Range Temperature -40°C to +85°C VCC Tolerance +1.8V 1.7 ~ 1.95V Table 10. DC Characteristics Symbol Parameter VIL Input low level VIH Input high level VOL VOH ISB1 ISB2 IST ICC1 ICC2 ICC3 Test Conditions Min. Typical -0.3 Max. 0.2VCC 0.8VCC VCC + 0.3 IOL= 100uA, Output low voltage 0.1 VCC= VCC Min. IOH= -100uA, Output high voltage VCC-0.1V VCC= VCC Min. CE# = VCC -0.2V, VCC standby current (CMOS) 10 50 WP# = 0/VCC CE# = VIH Min., VCC standby current (TTL) 1 WP# = 0/VCC Rise time = 1ms, Staggered power-up current Line capacitance = 20 30 0.1uF VCC active current tRC Min., CE# = VIL, 23 30 (Sequential Read) IOUT= 0mA VCC active current (Note3) 23 30 (Program) VCC active current (Erase) 15 Unit Notes V V V 1 V 1 uA mA mA mA mA 30 mA ILI Input leakage current VIN= 0 to VCC Max. +/- 10 uA ILO Output leakage current VOUT= 0 to VCC Max. +/- 10 uA ILO Output current of R/B# pin (R/B#) VOL=0.2V 3 4 2 mA 1 Notes: 1. The test can be initiated after VCC goes VCC (min) and performed under the condition of 1mS interval. 2. It is necessary to set ILO(R/B#) to be relaxed if the strength of R/B# pull-down is not set to full. And the VOL/VOH will be relaxed if the strength of I/O drive is not full. 3. The typical program current (ICC2) for two-plane program operation is 28mA. P/N: PM2031 REV. 1.0, MAY 29, 2014 69 MX30UF2G26(28)AB MX30UF4G26(28)AB Table 11. Capacitance TA = +25°C, F = 1 MHz Symbol Parameter CIN COUT Typ. Max. Units Conditions Input capacitance 10 pF VIN = 0 V Output capacitance 10 pF VOUT = 0 V Table 12. AC Testing Conditions Testing Conditions Value Unit 0 to VCC V 1TTL+CL(30) pF 2.5 VCC/2 VCC/2 ns V V Input pulse level Output load capacitance Input rise and fall time Input timing measurement reference levels Output timing measurement reference levels Table 13. Program and Erase Characteristics Symbol tPROG tCBSY (Program) tRCBSY (Read) tDBSY tFEAT tOBSY tPBSY NOP tERASE (Block) Parameter Page programming time Dummy busy time for cache program Dummy busy time for cache read The busy time for two-plane program/erase operation The busy time for Set Feature/ Get Feature The busy time for OTP program at OTP protection mode The busy time for program/erase at protected blocks Number of partial program cycles in same page Block erase time P/N: PM2031 Min. Typ. Max. Unit Note 320 5 2 0.5 1 600 us 700 us 25 us 1 us 1 us 30 us 3 us 4 cycles 3.5 ms REV. 1.0, MAY 29, 2014 70 MX30UF2G26(28)AB MX30UF4G26(28)AB Table 14. AC Characteristics Symbol Parameter Min. Typical Max. Unit Note tCLS tCLH tCS tCH tWP tALS CLE setup time CLE hold time CE# setup time CE# hold time Write pulse width ALE setup time 10 5 20 5 12 10 ns ns ns ns ns ns 1 1 1 1 1 1 tALH ALE hold time 5 ns 1 tDS Data setup time 10 ns 1 tDH Data hold time 5 ns 1 tWC Write cycle time 25 ns 1 tWH WE# high hold time 10 ns 1 tADL 70 ns 1 tWW tRR Last address latched to data loading time during program operations WP# transition to WE# high Read to RE# falling edge 100 20 ns ns 1 1 tRP Read pulse width 12 ns 1 tRC Read cycle time 25 ns 1 tREA RE# access time (serial data access) 22 ns 1 tCEA CE# access time 25 ns 1 tRLOH RE#-low to data hold time (EDO) 3 ns tOH Data output hold time 15 ns 1 tRHZ RE#-high to output-high impedance 60 ns 1 tCHZ CE#-high to output-high impedance 50 ns 1 tCOH CE# high to output hold time 15 ns tREH RE# high hold time 10 ns 1 tIR Output high impedance to RE# falling edge 0 ns 1 tRHW RE# high to WE# low 60 ns 1 tWHR WE# high to RE# low 80 ns 1 tR The data transfering from array to buffer 25 us 1,2 tWB WE# high to busy 100 ns 1 tCLR CLE low to RE# low 10 ns 1 tAR ALE low to RE# low 10 ns 1 tRST Device reset time (Idle/ Read/ Program/ Erase) us 1 5/10/500 Notes: 1. ONFI Mode 4 compliant 2. The timing spec needs to be relaxed if the I/O drive strength is not full. P/N: PM2031 REV. 1.0, MAY 29, 2014 71 MX30UF2G26(28)AB MX30UF4G26(28)AB 8. OPERATION MODES: LOGIC AND COMMAND TABLES Address input, command input and data input/output are managed by the CLE, ALE, CE#, WE#, RE# and WP# signals, as shown in Table 15. Logic Table below. Program, Erase, Read and Reset are four major operations modes controlled by command sets, please refer to Table 16-1 and 16-2. Table 15. Logic Table Mode CE# RE# Address Input (Read Mode) L Address Input (Write Mode) WE# CLE ALE WP# H L H X L H L H H Command Input (Read Mode) L H H L X Command Input (Write Mode) L H H L H Data Input L H L L H Data Output L H L L X During Read (Busy) X H H L L X During Programming (Busy) X X X X X H During Erasing (Busy) X X X X X H Program/Erase Inhibit X X X X X L Stand-by H X X X X 0V/VCC Notes: 1. H = VIH; L = VIL; X = VIH or VIL 2. WP# should be biased to CMOS high or CMOS low for stand-by. P/N: PM2031 REV. 1.0, MAY 29, 2014 72 MX30UF2G26(28)AB MX30UF4G26(28)AB Table 16-1. HEX Command Table First Cycle Second Cycle 00H 85H 05H 00H 31H 3FH 90H ECH EDH EFH EEH FFH 80H 80H 60H 23H 24H 2AH 2CH 70H 78H 7AH 30H E0H 31H 10H 15H D0H - Read Mode Random Data Input Random Data Output Cache Read Random Cache Read Sequential Cache Read End ID Read Parameter Page Read (ONFI) Unique ID Read (ONFI) Set Feature (ONFI) Get Feature (ONFI) Reset Page Program Cache Program Block Erase Block Un-Protect Lower2 Block Un-Protect Upper2 Block Protect2 Block Solid-Protect2 Status Read Status Enhanced Read (ONFI)1 Block Protection Status Read2 Acceptable While Busy V V V Table 16-2. Two-plane Command Set Two-plane Program (ONFI) Two-plane Cache Program (ONFI) Two-plane Block Erase (ONFI) First Cycle 80H 80H 60H Second Cycle 11H 11H D1H Third Cycle 80H 80H 60H Fourth Cycle 10H 15H D0H Caution: None of the undefined command inputs can be accepted except for the command set in the above table. Notes: 1. The command set is not valid for 1Gb. 2. The IO15-IO8 should be "0" while writing command code for the x16 NAND device. P/N: PM2031 REV. 1.0, MAY 29, 2014 73 MX30UF2G26(28)AB MX30UF4G26(28)AB 8-1. R/B#: Termination for The Ready/Busy# Pin (R/B#) The R/B# is an open-drain output pin and a pull-up resistor is necessary to add on the R/B# pin. The R/B# outputs the ready/busy status of read/program/ erase operation of the device. When the R/B# is at low, the device is busy for read or program or erase operation. When the R/B# is at high, the read/program/erase operation is finished. Rp Value Guidence The rise time of the R/B# signal depends on the combination of Rp and capacitive loading of the R/B# circuit. It is approximately two times constants (Tc) between the 10% and 90% points on the R/B# waveform. TC = R × C Where R = Rp (Resistance of pull-up resistor), and C = CL (Total capacitive load) The fall time of the R/B# signal majorly depends on the output impedance of the R/B# signal and the total load capacitance. Rp (Min.) = Vcc (Max.) - VOL (Max.) IOL+ΣIL Notes: 1. Considering of the variation of device-by-device, the above data is for reference to decide the resistor value. 2. Rp maximum value depends on the maximum permissible limit of tr. 3. IL is the total sum of the input currents of all devices tied to the R/B pin. P/N: PM2031 REV. 1.0, MAY 29, 2014 74 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 41. R/B# Pin Timing Information @ Vcc = 1.8 V, Ta = 25°C, CL=100pF Tc 800 800ns 600 400 400ns 200 2k 4k 6k 8k Rp (ohm) @ Vcc = 1.8 V, Ta = 25°C, CL=100pF ibusy 0.9 1mA 0.45 0.4mA 0.3 0.23 2k 4k 6k 8k Rp (ohm) VCC VCC Device Ready State Rp CL R/B# ~90% VCC ~90% VOH VOH VOL VOL VSS ~10% tf P/N: PM2031 Busy State ~10% tr REV. 1.0, MAY 29, 2014 75 MX30UF2G26(28)AB MX30UF4G26(28)AB 8-2. Power On/Off Sequence After the Chip reaches the power on level (Vth = Vcc min.), the internal power on reset sequence will be triggered. During the internal power on reset period, no any external command is accepted. There are two ways to identify the termination of the internal power on reset sequence. Please refer to Figure 48. Power On/Off Sequence. • R/B# pin • Wait 1 ms During the power on and power off sequence, it is recommended to keep the WP# = Low for internal data protection. Figure 42. Power On/Off Sequence Vcc min. Vcc WP# WE# 1 ms (Max.) 10 us (Max.) R/B# P/N: PM2031 REV. 1.0, MAY 29, 2014 76 MX30UF2G26(28)AB MX30UF4G26(28)AB 8-2-1. WP# Signal WP# going Low can cause program and erase operations automatically reset. The enabling & disabling of the both operations are as below: Figure 43-1. Enable Programming of WP# Signal WE# IO[x:0] WP# Figure 43-2. Disable Programming of WP# Signal 80h 10h tWW WE# IO[x:0] 80h 10h tWW WP# Figure 43-3. Enable Erasing of WP# Signal WE# IO[x:0] WP# Figure 43-4. Disable Erasing of WP# Signal 60h D0h tWW WE# IO[x:0] 60h D0h tWW WP# P/N: PM2031 REV. 1.0, MAY 29, 2014 77 MX30UF2G26(28)AB MX30UF4G26(28)AB 9. SOFTWARE ALGORITHM 9-1. Invalid Blocks (Bad Blocks) The bad blocks are included in the device while it gets shipped. During the time of using the device, the additional bad blocks might be increasing; therefore, it is recommended to check the bad block marks and avoid using the bad blocks. Furthermore, please read out the bad block information before any erase operation since it may be cleared by any erase operation. Figure 44. Bad Blocks Bad Block Bad Block While the device is shipped, the value of all data bytes of the good blocks are FFh. The 1st byte of the 1st or 2nd page in the spare area for bad block will not be FFh for x8; and not be FFFFh for x16 (either first or second byte is not FFh). The erase operation at the bad blocks is not recommended. After the device is installed in the system, the bad block checking is recommended. The figure shows the brief test flow by the system software managing the bad blocks while the bad blocks were found. When a block gets damaged, it should not be used any more. Due to the blocks are isolated from bit-line by the selected gate, the performance of good blocks will not be impacted by bad ones. Table 17. Valid Blocks Valid (Good) Block Number Density Min. 2Gb 4Gb Typ. Max. Unit 2008 2048 Block 4016 4096 Block P/N: PM2031 Remark Block 0 is guaranteed to be good. REV. 1.0, MAY 29, 2014 78 MX30UF2G26(28)AB MX30UF4G26(28)AB 9-2. Bad Block Test Flow Although the initial bad blocks are marked by the flash vendor, they could be inadvertently erased and destroyed by a user that does not pay attention to them. To prevent this from occurring, it is necessary to always know where any bad blocks are located. Continually checking for bad block markers during normal use would be very time consuming, so it is highly recommended to initially locate all bad blocks and build a bad block table and reference it during normal NAND flash use. This will prevent having the initial bad block markers erased by an unexpected program or erase operation. Failure to keep track of bad blocks can be fatal for the application. For example, if boot code is programmed into a bad block, a boot up failure may occur. The following section shows the recommended flow for creating a bad block table. Figure 45. Bad Block Test Flow Start Block No. = 0 Fail (Note) Read FFh Check Create (or Update) Bad Block Pass Block No. = 4095 Block No. = Block No. + 1 (Note1) No Yes End Note 1. The block No. = 2047 for 2Gb, 4095 for 4Gb 9-3. Failure Phenomena for Read/Program/Erase Operations The device may fail during a Read, Program or Erase operation. The following possible failure modes should be considered when implementing a highly reliable system: Table 18. Failure Modes Failure Mode Detection and Countermeasure Sequence Erase Failure Status Read after Erase Block Replacement Programming Failure Status Read after Program Block Replacement Read Failure Read Failure P/N: PM2031 ECC REV. 1.0, MAY 29, 2014 79 MX30UF2G26(28)AB MX30UF4G26(28)AB 9-4. Program It is feasible to reprogram the data into another page (Page B) when an error occurred in Page A by loading from an external buffer. Then create a bad block table or by using another appropriate scheme to prevent further system accesses to Page A. Figure 46. Failure Modes Program error occurs in Page A Buffer Memory Block Another good block Page B Figure 47. Program Flow Chart Start Command 80h Program Command Flow Set Address Write Data Write 10h Read Status Register No SR[6] = 1 ? (or R/B# = 1 ?) Yes * Program Error No SR[0] = 0 ? Yes Program Completed 9-5. Erase To prevent future accesses to this bad block, it is feasible to create a table within the system or by using another appropriate scheme when an error occurs in an Erase operation. P/N: PM2031 REV. 1.0, MAY 29, 2014 80 MX30UF2G26(28)AB MX30UF4G26(28)AB Figure 48. Erase Flow Chart Start Command 60h Set Block Address Command D0h Read Status Register No SR[6] = 1 ? (or R/B# = 1 ?) Yes No SR[0] = 0 ? * Erase Error Yes Erase Completed * The failed blocks will be identified and given errors in status register bits for attempts on erasing them. Figure 49. Read Flow Chart Start Command 00h Set Address Command 30h Read Status Register SR[6] = 1 ? (or R/B# = 1 ?) No Yes Read Data Out ECC Generation ECC handling by the host controller Verify ECC No Reclaim the Error Yes Page Read Completed P/N: PM2031 REV. 1.0, MAY 29, 2014 81 MX30UF2G26(28)AB MX30UF4G26(28)AB 10. PACKAGE INFORMATION P/N: PM2031 REV. 1.0, MAY 29, 2014 82 MX30UF2G26(28)AB MX30UF4G26(28)AB Title: Package Outline for 63-VFBGA (9x11x1.0mm, Ball-pitch: 0.8mm, Ball-diameter: 0.45mm) P/N: PM2031 REV. 1.0, MAY 29, 2014 83 MX30UF2G26(28)AB MX30UF4G26(28)AB 11. REVISION HISTORY Rev. No. Descriptions Page Date 0.01 1. Modified Bus to x8 and x16 in Feature page. P6 2. Updated descriptions for Sec. 6-5. Page Program P28 3. Added Notes for Vendor Blocks P46 4. Modified AC waveforms for Fig. 32. OTP Protection P57 5. Modified AC waveforms for Fig 34 .Two-plane Cache Program P61 6. Updated Table 10. DC Table for VOL & VOH values. 7. Updated Table 13. Program and Erase Characteristics Table P70 8. Revised descriptions for Sec. 9-1. Invalid blocks. P78 9. Updated descriptions for Sec. 9-2. Bad Block Test Flow P79 10. Removed "Advanced Information" from Title . P6 11. Added one part number: MX30UF2G28AB-TI P9 MAY/21/2014 P69 12. Content Modifications P7,14, 45, 62 13. Specifications improvement for the folllowing parameters: tPROG, tRCBSY, tERASE, VOH, VOL, ICC1, ICC2, ICC3, tRHW, P6, 69, 70, 71 1.0 1. Specifications improvement for the folllowing parameters: tPROG, tBERS and tRHZ. 2. Updated AC waveforms and added a note for Fig. 32. OTP Protection Operation. P45, 71 3. Added a note for AC waveforms for Sequence of Cache Program P33 P/N: PM2031 MAY/29/2014 P57 REV. 1.0, MAY 29, 2014 84 MX30UF2G26(28)AB MX30UF4G26(28)AB Except for customized products which have been expressly identified in the applicable agreement, Macronix's products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only, and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property damages. In the event Macronix products are used in contradicted to their target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/or distributors shall be released from any and all liability arisen therefrom. Copyright© Macronix International Co., Ltd. 2013~2014. All rights reserved, including the trademarks and tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Au­dio, Rich Book, Rich TV, and FitCAM. The names and brands of third party referred thereto (if any) are for identification purposes only. For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com MACRONIX INTERNATIONAL CO., LTD. http://www.macronix.com MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice. P/N: PM2031 REV. 1.0, MAY 29, 2014 85