MLX92212LSE-AAA-000-SP

MLX92212LSE 3-Wire Hall Effect Latch / Switch Datasheet Features and Benefits Application Examples               Low voltage supply : from 2.5V to 5.5V Chopper-stabilized amplifier stage Low power switch: 2.1mA Wide temperature range: -40C to 150C Automotive qualified: AEC-Q100 Optimized ESD performance: 8kV Designed for standalone PCB applications Thin SOT23 3L Green Compliant package Automotive, Consumer and Industrial BLDC motor commutation Solid-state Latch Low power applications Index counting Electrical power steering Ordering Information Product Code Temperature Code Package Code Option code Packing form code MLX92212 L SE AAA-000 RE MLX92212 L SE ABA-000 RE Legend: Temperature code: Package Code: Packing Form: Ordering code L (-40 to 150°C) SE = TSOT-23L RE = Reel AAA = Very sensitive latch ABA = Unipolar switch Ordering Example: MLX92212LSE-AAA-000 1. Functional Diagram VDD Voltage Regulator VHALL Regulator Switched Hall Plate Oscillator 2. General Description Bandgap Reference BOP/BRP Reference OUT Output Driver The Melexis MLX92212 is a low voltage Hall-effect switch designed in mixed signal CMOS technology. The device integrates a voltage regulator, Hall sensor with advanced offset cancellation system and an open-drain output driver, all in a single package. Amplifier Phase generator GND The device features a low voltage regulator with optimized performances targetting low power consumption at low voltage levels. POR It is suitable for use in automotive applications thanks to its wide temperature range and extensive qualification according to automotive standards. The MLX92212 is delivered in a Green compliant 3-pin Thin Small Outline Transistor (TSOT) for surface-mount process. REVISION 3 – June 03 2019 390109221203 Page 1 of 12 MLX92212LSE 3-Wire Hall Effect Latch / Switch Datasheet Table of Contents 1. Functional Diagram .................................................................................................................................... 1 2. General Description .................................................................................................................................... 1 3. Glossary of Terms ........................................................................................................................................ 3 4. Absolute Maximum Ratings ..................................................................................................................... 3 5. General Electrical Specifications ............................................................................................................ 4 6. Magnetic Specification ............................................................................................................................... 5 6.1. MLX92212LSE-AAA-000-RE .......................................................................................................................... 5 6.2. MLX92212LSE-ABA-000-RE .......................................................................................................................... 5 7. Output behaviour versus Magnetic Field ............................................................................................ 6 7.1. Latch sensor: MLX92212LSE-AAA-000 .................................................................................................... 6 7.2. Switch sensor: MLX92212LSE-ABA-000 ................................................................................................... 6 8. Detailed General Description .................................................................................................................. 7 9. Latch/Switch characteristics ................................................................................................................... 7 10. Performance graphs................................................................................................................................. 8 10.1. MLX92212LSE -AAA-000 .............................................................................................................................. 8 10.2. MLX92212LSE -ABA-000 .............................................................................................................................. 8 11. Application Information ......................................................................................................................... 9 11.1. Typical Three-Wire Application Circuit .................................................................................................. 9 11.2. Automotive and Harsh, Noisy Environments Three-Wire Circuit ................................................ 9 12. Standard information regarding manufacturability of Melexis products with different soldering processes ................................................................................................................................. 10 13. ESD Precautions...................................................................................................................................... 10 14. Package Information............................................................................................................................. 11 14.1. SE (TSOT-3L) Package Information ....................................................................................................... 11 15. Contact ....................................................................................................................................................... 12 16. Disclaimer ................................................................................................................................................. 12 REVISION 3 – June 03 2019 390109221203 Page 2 of 12 MLX92212LSE 3-Wire Hall Effect Latch / Switch Datasheet 3. Glossary of Terms MilliTesla (mT), Gauss ESD Units of magnetic flux density: 1mT = 10 Gauss Restriction of Hazardous Substances Thin Small Outline Transistor (TSOT package) – also referred with the Melexis package code “SE” Electro-Static Discharge BLDC Brush-Less Direct-Current RoHS TSOT 4. Absolute Maximum Ratings Parameter Symbol Value Units VDD -0.5 to 6 V IDD ± 20 mA VOUT -0.5 to 6 V IOUT ± 20 mA Operating Temperature Range TA -40 to 150 C Storage Temperature Range TS -50 to 165 C Maximum Junction Temperature TJ 165 C Supply Voltage Supply Current (1) Output Voltage Output Current (1) (2) ESD Sensitivity – HBM - 8000 ESD Sensitivity – CDM - 750 V V Table 1: Absolute maximum ratings Note 1: Including current through the protection structure. Max Power dissipation should be also considered. Note 2: Human Body Model according AEC-Q100-002 standard Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. REVISION 3 – June 03 2019 390109221203 Page 3 of 12 MLX92212LSE 3-Wire Hall Effect Latch / Switch Datasheet 5. General Electrical Specifications o DC Operating Parameters TA = -40 to 150 C, VDD = 2.5V to 5.5V (unless otherwise specified) Parameter Symbol Test Conditions Min Supply Voltage VDD Operating 2.5 Supply Current IDD Output Saturation Voltage VDSON IOUT = 5mA, B > BOP Output Leakage Current IOFF B < BRP, VOUT = 5.5V 0.01 Output Rise Time (1) tr RL = 1k, CL = 50pF 0.25 s Output Fall Time (1) tf RL = 1k, CL = 50pF 0.25 s Power-On Time (2) tPON dVDD/dt > 2V/µs Power-On Reset Voltage (3) Power-On State 1.3 Typ 2.1 Max Units 5.5 V 3.2 mA 0.5 V 10 A 38 70 s VPOR 1.95 2.1 V - High Maximum Switching Frequency (1) FSW B≥±40mT and square wave magnetic field SE Package Thermal Resistance RTH Single layer (1S) Jedec board 10 KHz 300 °C/W Table 2: Electrical specifications 1 Guaranteed by design and verified by characterization, not production tested The Power-On time represents the time from reaching VDD = 2.5V to the first refresh of the output. 3 If VDD drops below VPOR the output is reset to High state. 2 REVISION 3 – June 03 2019 390109221203 Page 4 of 12 MLX92212LSE 3-Wire Hall Effect Latch / Switch Datasheet 6. Magnetic Specification 6.1. MLX92212LSE-AAA-000-RE o DC Operating Parameters TA = -40 upto 150 C, VDD = 2.5V to 5.5V (unless otherwise specified) Parameter Operating Point Release Point Hysteresis Symbol Test Conditions Min BOP BRP BHYST Typ Max Units TA = -40°C 0.6 2.1 3.8 mT TA = 25°C 0.6 2.0 3.8 mT TA = 150°C 0.6 1.9 3.8 mT TA = -40°C -3.8 -2.1 -0.6 mT TA = 25°C -3.8 -2.0 -0.6 mT TA = 150°C -3.8 -1.9 -0.6 mT TA = -40°C 1.7 4.2 6.8 mT TA = 25°C 1.7 4 6.8 mT TA = 150°C 1.7 3.8 6.8 mT Table 3: Magnetic specifications 6.2. MLX92212LSE-ABA-000-RE o DC Operating Parameters, TA = -40 upto 150 C, VDD = 2.5V to 5.5V (unless otherwise specified) Parameter Symbol Test Conditions Min Typ TA = -40°C 9.2 12.7 TA = 25°C 9.4 12.2 Operating Point BOP TA = 85°C 9.2 12.3 TA = 125°C 8.8 12.4 TA = 150°C 8.2 12.5 TA = -40°C 7.6 11 TA = 25°C 7.8 10.5 Release Point BRP TA = 85°C 7.8 10.6 TA = 125°C 7.4 10.7 TA = 150°C 6.8 10.8 Max Units 16.6 mT 15.4 mT 15.4 mT 16.0 mT 16.8 mT 14.4 mT 13.4 mT 13.4 mT 13.9 mT 14.8 mT Table 4: Magnetic specifications REVISION 3 – June 03 2019 390109221203 Page 5 of 12 MLX92212LSE 3-Wire Hall Effect Latch / Switch Datasheet 7. Output behaviour versus Magnetic Field 7.1. Latch sensor: MLX92212LSE-AAA-000 Parameter Test Conditions OUT South pole B > BOP Low North pole B < BRP High Table 5: Output behaviour versus magnetic pole (1) 7.2. Switch sensor: MLX92212LSE-ABA-000 Parameter Test Conditions OUT South pole B > BOP Low North pole (2) B < BRP High Table 6: Output behaviour versus magnetic pole South pole (1) North pole (2) OUT = High OUT = Low SE Package 1 2 Magnetic pole facing the branded / top side of the package North pole or absence of field or South field lower then Brp (ABA version) REVISION 3 – June 03 2019 390109221203 Page 6 of 12 MLX92212LSE 3-Wire Hall Effect Latch / Switch Datasheet 8. Detailed General Description Based on mixed signal CMOS technology, Melexis MLX92212LSE-AAA-000 is a Hall-effect device with very high magnetic sensitivity. Melexis MLX92212LSE-ABA-000 is a Hall-effect device with a low hysteresis covering higher magnetic fields. Both versions are allowing the use of generic magnets, weak magnets or larger air gap. The chopper-stabilized amplifier uses switched capacitor techniques to suppress the offset generally observed with Hall sensors and amplifiers. The CMOS technology makes this advanced technique possible and contributes to smaller chip size and lower current consumption than bipolar technology. The small chip size is also an important factor to minimize the effect of physical stress. This combination results in more stable magnetic characteristics and enables faster and more precise design. The operating voltage from 2.5V to 5.5V, low current consumption and large choice of operating temperature range according to “L” specification make this device suitable for automotive, industrial and consumer low voltage applications. The output signal is open-drain type. Such output allows simple connectivity with TTL or CMOS logic by using a pull-up resistor tied between a pull-up voltage and the device output 9. Latch/Switch characteristics The MLX92212-AAA exhibits magnetic latching characteristics. Output level Typically, the device behaves as a latch with symmetric operating and release switching points (BOP=|BRP|). This means magnetic fields with equivalent strength and opposite direction drive the output high and low. OUT switches to High OUT switches to Low OUT = High Removing the magnetic field (B0) keeps the output in its previous state. This latching property defines the device as a magnetic memory. OUT = Low BRP 0mT Flux density BOP The MLX92212LSE-ABA exhibits magnetic switching characteristics. Output level The device is south pole active: Applying a south magnetic pole greater than BOP facing the branded side of the package switches the output low. OUT switches to High OUT switches to Low Out = High Removing the magnetic field (B0) switches the output high. The use of the opposite magnetic pole facing the branded side does not affect the output state. Out = Low 0mT BRP BOP REVISION 3 – June 03 2019 390109221203 Flux density Page 7 of 12 MLX92212LSE 3-Wire Hall Effect Latch / Switch Datasheet 10. Performance graphs 10.1. MLX92212LSE -AAA-000 Typical Magnetic switch points vs Temperature 3 Bop, Vdd = 2.5V Brp, Vdd = 2.5V Typical Magnetic switch points vs Vdd Bop, Vdd = 5.5V Brp, Vdd = 5.5V Magnetic Field (mT) Magnetic Field (mT) 2 1 0 -1 -2 Brp, Tj = -40 °C Bop, Tj = 150 °C 5.00 Bop, Tj = -40 °C Brp, Tj = 150 °C 3.00 1.00 -1.00 -3.00 -5.00 -3 -40 -20 0 20 40 60 80 100 Temperature (°C) 120 140 2 160 3 4 5 6 Supply (V) Typical Supply current vs Temperature Idd, Vdd = 2.5V Idd, Vdd = 5.5V 2.5 2 1.5 1 -40 -20 0 20 Typical Supply current vs Vdd 2.3 On Supply Current (mA) On Supply Current (mA) 3 Idd, Temp = -40degC Idd, Temp = 150 degC 2.2 2.1 2 1.9 1.8 1.7 40 60 80 100 120 140 160 Temperature (°C) 2 3 4 Supply (V) 5 6 10.2. MLX92212LSE -ABA-000 Typical Magnetic switch points vs Temperature Bop, Vdd = 2.5V Brp, Vdd = 2.5V 18 Typical Magnetic switch points vs Vdd Bop, Vdd = 5.5V Brp, Vdd = 5.5V 15 Magnetic Field (mT) Magnetic Field (mT) 16 14 12 10 8 Bop, Tj = -40 °C Bop, Tj = 150 °C Brp, Tj = -40 °C Brp, Tj = 150 °C 14 13 12 11 10 6 -40 -20 0 20 40 60 80 Temperature (°C) REVISION 3 – June 03 2019 390109221203 100 120 140 160 9 2 3 4 5 6 Supply (V) Page 8 of 12 MLX92212LSE 3-Wire Hall Effect Latch / Switch Datasheet 11. Application Information 11.1. Typical Three-Wire Application Circuit MLX92212 VDD C1 10nF VCC Notes: 1. For proper operation, a 10nF to 100nF bypass capacitor should be placed as close as possible to the VDD and ground pin. RPU 10k VOUT 2. A capacitor connected to the output is not obligatory, because OUT the output slope is generated internally. GND 11.2. Automotive and Harsh, Noisy Environments Three-Wire Circuit D1 VCC R1 100 Ohms MLX92212 10k VDD Z1 C1 RPU VOUT OUT 10nF GND C2 4.7nF Notes: 1. For proper operation, a 10nF to 100nF bypass capacitor should be placed as close as possible to the VDD and ground pin. 2. The device could tolerate negative voltage down to -0.5 V, so if negative transients over supply line VPEAK< -32V are expected, usage of the diode D1 is recommended. Otherwise only R1 is sufficient. When selecting the resistor R1, three points are important: - the resistor has to limit IDD/IDDREV to 40mA maximum - the resistor has to withstand the power dissipated in both over voltage conditions (VR12/R1) - the resulting device supply voltage VDD has to be higher than VDD min (VDD = VCC – R1.IDD) 3. The device could tolerate positive supply voltage up to +6V (until the maximum power dissipation is not exceeded), so if positive transients over supply line with VPEAK> 6V are expected, usage a zener diode Z1 is recommended. The R1-Z1 network should be sized to limit the voltage over the device below the maximum allowed. REVISION 3 – June 03 2019 390109221203 Page 9 of 12 MLX92212LSE 3-Wire Hall Effect Latch / Switch Datasheet 12. Standard information regarding manufacturability of Melexis products with different soldering processes Our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity level according to following test methods: Reflow Soldering SMD’s (Surface Mount Devices)   IPC/JEDEC J-STD-020 Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices (classification reflow profiles according to table 5-2) EIA/JEDEC JESD22-A113 Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing (reflow profiles according to table 2) Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)   EN60749-20 Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat EIA/JEDEC JESD22-B106 and EN60749-15 Resistance to soldering temperature for through-hole mounted devices Iron Soldering THD’s (Through Hole Devices)  EN60749-15 Resistance to soldering temperature for through-hole mounted devices Solderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)  EIA/JEDEC JESD22-B102 and EN60749-21 Solderability For all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature, temperature gradient, temperature profile etc) additional classification and qualification tests have to be agreed upon with Melexis. The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of adhesive strength between device and board. Melexis recommends reviewing on our web site the General Guidelines soldering recommendation (http://www.melexis.com/Quality_soldering.aspx) as well as trim&form recommendations (http://www.melexis.com/Assets/Trim-and-form-recommendations-5565.aspx). Melexis is contributing to global environmental conservation by promoting lead free solutions. For more information on qualifications of RoHS compliant products (RoHS = European directive on the Restriction Of the use of certain Hazardous Substances) please visit the quality page on our website: http://www.melexis.com/quality.aspx 13. ESD Precautions Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). Always observe Electro Static Discharge control procedures whenever handling semiconductor products. REVISION 3 – June 03 2019 390109221203 Page 10 of 12 MLX92212LSE 3-Wire Hall Effect Latch / Switch Datasheet 14. Package Information 14.1. SE (TSOT-3L) Package Information Notes: 1. All dimensions are in millimeters 2. Outermost plastic extreme width does not include mold flash or protrusions. Mold flash and protrusions shall not exceed 0.15mm per side. 3. Outermost plastic extreme length does not include mold flash or protrusions. Mold flash and protrusions shall not exceed 0.25mm per side. 4. The lead width dimension does not include dambar protrusion. Allowable dambar protrusion shall be 0.07mm total in excess of the lead width dimension at maximum material condition. 5. Dimension is the length of terminal for soldering to a substrate. 6. Formed lead shall be planar with respect to one another with 0.076mm at seating plane. Marking: Top side : MLX92212LSE-AAA-000 = 12YY (YY = year code) MLX92212LSE-ABA-000 = 12BY (Y = year code ) Bottom side: LLLL= last 4 digits from lot# Hall plate location 1.45 0.80 0.275 END VIEW TOP VIEW Package line A A1 A2 D E E1 L b c e e1  min – 0.025 0.85 2.80 2.60 1.50 0.30 0.30 0.10 0.95 1.90 0° max 1.00 0.10 0.90 3.00 3.00 1.70 0.50 0.45 0.20 BSC BSC Pin № Name Type Function 1 2 3 VDD OUT GND Supply Output Ground Supply Voltage pin Open Drain output pin Ground pin 8° Table 7: Package pinout REVISION 3 – June 03 2019 390109221203 Page 11 of 12 MLX92212LSE 3-Wire Hall Effect Latch / Switch Datasheet 15. Contact For the latest version of this document, go to our website at www.melexis.com. For additional information, please contact our Direct Sales team and get help for your specific needs: Europe, Africa Telephone: +32 13 67 04 95 Email : sales_europe@melexis.com Americas Telephone: +1 603 223 2362 Email : sales_usa@melexis.com Asia Email : sales_asia@melexis.com 16. 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This document supersedes and replaces all prior information regarding the Product(s) and/or previous versions of this document. Melexis NV © - No part of this document may be reproduced without the prior written consent of Melexis. (2016) ISO/TS 16949 and ISO14001 Certified REVISION 3 – June 03 2019 390109221203 Page 12 of 12