US1881ESE-AAA-000-RE

US1881 Hall Latch – High Sensitivity Features and Benefits Applications  Wide operating voltage range from 3.5V to 24V  Automotive, Consumer and Industrial  High magnetic sensitivity – Multi-purpose  Solid-state switch  CMOS technology  Brushless DC motor commutation  Chopper-stabilized amplifier stage  Speed detection  Low current consumption  Linear position detection  Open drain output   Angular position detection Thin SOT23 3L and flat TO-92 3L both RoHS Compliant packages  Proximity detection Ordering information Product code Temperature Code Package Code Option code Packing form code US1881 US1881 US1881 US1881 US1881 US1881 E E K K L L SE UA SE UA SE UA AAA-000 AAA-000 AAA-000 AAA-000 AAA-000 AAA-000 RE BU RE BU RE UA Legend: Temperature code: Package Code: Packing Form: Ordering Example: L(-40 to 150°C) E(-40 to 85°C) K (-40 to 125°C) SE = TSOT-23L UA = TO92-3L BU = Bulk RE = Reel US1881ESE-AAA-000-RE 1. Functional Diagram 2. General Description The Melexis US1881 is a Hall-effect latch designed in mixed signal CMOS technology. The device integrates a voltage regulator, Hall sensor with dynamic offset cancellation system, Schmitt trigger and an open-drain output driver, all in a single package. Thanks to its wide operating voltage range and extended choice of temperature range, it is quite suitable for use in automotive, industrial and consumer applications. The device is delivered in a Thin Small Outline Transistor (TSOT) for surface mount process and in a Plastic Single In Line (TO-92 flat) for through-hole mount. Both 3-lead packages are RoHS compliant. REVISION 019 - 13 JUNE 2019 3901001881 Page 1 of 12 US1881 Hall Latch – High Sensitivity Contents Features and Benefits ................................................................................................................................ 1 Applications ............................................................................................................................................... 1 Ordering information................................................................................................................................. 1 1. Functional Diagram................................................................................................................................ 1 2. General Description ............................................................................................................................... 1 3. Glossary of Terms .................................................................................................................................. 3 4. Absolute Maximum Ratings ................................................................................................................... 3 5. Pin Definitions and Descriptions ............................................................................................................ 3 6. General Electrical Specifications ............................................................................................................ 4 7. Magnetic Specifications ......................................................................................................................... 4 8. Output Behaviour versus Magnetic Pole ................................................................................................ 4 9. Detailed General Description ................................................................................................................. 5 10. Unique Features .................................................................................................................................. 5 11. Performance Graphs ............................................................................................................................ 6 11.1. Magnetic parameters vs. TA .............................................................................................................. 6 11.2. Magnetic parameters vs. VDD .......................................................................................................... 6 11.3. VDSON vs. TA ........................................................................................................................................ 6 11.4. VDSON vs. VDD ...................................................................................................................................... 6 11.5. IDD vs. TA ............................................................................................................................................ 6 11.6. IDD vs. VDD........................................................................................................................................... 6 11.7. IOFF vs. TA ........................................................................................................................................... 7 11.8. IOFF vs. VDD .......................................................................................................................................... 7 12. Test Conditions .................................................................................................................................... 7 12.1. Supply Current .................................................................................................................................. 7 12.2. Output Saturation Voltage ............................................................................................................... 7 12.3. Output Leakage Current ................................................................................................................... 7 12.4. Magnetic Thresholds ........................................................................................................................ 7 13. Application Information ....................................................................................................................... 8 13.1. Typical Three-Wire Application Circuit ............................................................................................ 8 13.2. Two-Wire Circuit ............................................................................................................................... 8 13.3. Automotive and Harsh, Noisy Environments Three-Wire Circuit ................................................... 8 14. Application Comments ......................................................................................................................... 8 15. Standard information regarding manufacturability of Melexis products with different soldering processes .............................................................................................................................................. 9 16. ESD Precautions ................................................................................................................................... 9 17. Package Information .......................................................................................................................... 10 17.1. SE Package (TSOT-3L) ..................................................................................................................... 10 17.2. UA Package (TO-92 flat) .................................................................................................................. 11 18. Contact .............................................................................................................................................. 12 19. Disclaimer .......................................................................................................................................... 12 REVISION 019 - 13 JUNE 2019 3901001881 Page 2 of 12 US1881 Hall Latch – High Sensitivity 3. Glossary of Terms MilliTesla (mT), Gauss Units of magnetic flux density: 1mT = 10 Gauss Restriction of Hazardous Substances Thin Small Outline Transistor (TSOT package) – also referred with the Melexis package code “SE” Electro-Static Discharge Brush-Less Direct-Current Magnetic flux density applied on the branded side of the package which turns the output driver ON (VOUT = VDSon) Magnetic flux density applied on the branded side of the package which turns the output driver OFF (VOUT = high) RoHS TSOT ESD BLDC Operating Point (BOP) Release Point (BRP) 4. Absolute Maximum Ratings Parameter Supply Voltage Supply Current Output Voltage Output Current Storage Temperature Range Maximum Junction Temperature Symbol VDD IDD VOUT IOUT TS TJ Value 28 50 28 50 -50 to 150 165 Units V mA V mA °C °C Table 1: Absolute maximum ratings Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum- rated conditions for extended periods may affect device reliability. Operating Temperature Range Temperature Suffix “E” Temperature Suffix “K” Temperature Suffix “L” Symbol TA TA TA Value -40 to 85 -40 to 125 -40 to 150 Units °C °C °C 5. Pin Definitions and Descriptions SE Pin № 1 2 3 UA Pin № 1 3 2 Name VDD OUT GND Type Supply Output Ground Function Supply Voltage pin Open Drain Output pin Ground pin Table 2: Pin definitions and descriptions SE package REVISION 019 - 13 JUNE 2019 3901001881 UA package Page 3 of 12 US1881 Hall Latch – High Sensitivity 6. General Electrical Specifications o DC Operating Parameters TA = 25 C, VDD = 3.5V to 24V (unless otherwise specified) Parameter Symbol Test Conditions Min Typ Supply Voltage S VDD Operating 3.5 ymbol Current Supply IDD B < BRP Output Saturation Voltage VDSon IOUT = 20mA, B > BOP Test Conditions Output Leakage Current IOFF B < BRP, VOUT = 24V 0.3 Output Rise Time tr 0.25 RL = 1kΩ, CL = 20pF Min Output Fall Time tf 0.25 RL = 1kΩ, CL = 20pF Maximum Switching Frequency FSW 10 Typ Package Thermal Resistance RTH Single layer (1S) Jedec board 301 Max Max 24 5 0.5 10 Units Max Max 9.5 -0.5 12 9.5 -0.5 12 9.5 -0.5 12.5 Units Units mT mT mT mT mT mT mT mT mT V mA V µA µs µs kHz °C/W Table 3: Electrical specifications 7.Units Magnetic Specifications DC Operating Parameters VDD = 3.5V to 24V (unless otherwise specified) Parameter Symbol Test Conditions Operating Point BOP Release Point TA = 85°C, E spec. BRP Hysteresis BHYST Operating Point BOP Release Point TA = 125°C, K spec. BRP Hysteresis BHYST Operating Point BOP Release Point TA = 150°C, L spec. BRP Hysteresis BHYST Min Min 0.5 -9.5 7 0.5 -9.5 7 0.5 -9.5 6 Typ Typ Table 4: Magnetic specifications Note: For typical values, please refer to the performance graphs in section 11 8. Output Behaviour versus Magnetic Pole DC Operating Parameters TA = -40 ᵒC to 150 ᵒC, VDD = 3.5V to 24V (unless otherwise specified) Parameter Test Conditions (SE) OUT (SE) Test Conditions (UA) OUT (UA) South pole B < BRP High B > BOP Low North pole B > BOP Low B < BRP High Table 5: Output behaviour versus magnetic pole REVISION 019 - 13 JUNE 2019 3901001881 Page 4 of 12 US1881 Hall Latch – High Sensitivity 9. Detailed General Description Based on mixed signal CMOS technology, Melexis US1881 is a Hall-effect device with high magnetic sensitivity. This multipurpose latch suits most of the application requirements. The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed with Hall sensors and amplifiers. The CMOS technology makes this advanced technique possible and contributes to smaller chip size and lower current consumption than bipolar technology. The small chip size is also an important factor to minimize the effect of physical stress. This combination results in more stable magnetic characteristics and enables faster and more precise design. The wide operating voltage from 3.5V to 24V, low current consumption and large choice of operating temperature range according to “L”, “K” and “E” specification make this device suitable for automotive, industrial and consumer applications. The output signal is open-drain type. Such output allows simple connectivity with TTL or CMOS logic by using a pull-up resistor tied between a pull-up voltage and the device output. 10. Unique Features The US1881 exhibits latch magnetic switching characteristics. Therefore, it requires both south and north poles to operate properly. The device behaves as a latch with symmetric operating and release switching points (BOP=|BRP|). This means magnetic fields with equivalent strength and opposite direction drive the output high and low. Removing the magnetic field (B→0) keeps the output in its previous state. This latching property defines the device as a magnetic memory. A magnetic hysteresis BHYST keeps BOP and BRP separated by a minimal value. This hysteresis prevents output oscillation near the switching point. REVISION 019 - 13 JUNE 2019 3901001881 Page 5 of 12 US1881 Hall Latch – High Sensitivity 11. Performance Graphs 11.1. Magnetic parameters vs. TA 11.2. Magnetic parameters vs. VDD 11.3. VDSON vs. TA 11.4. VDSON vs. VDD 11.5. IDD vs. TA 11.6. IDD vs. VDD REVISION 019 - 13 JUNE 2019 3901001881 Page 6 of 12 US1881 Hall Latch – High Sensitivity 11.7. IOFF vs. TA 11.8. IOFF vs. VDD 12. Test Conditions Note: DUT = Device under Test 12.1. Supply Current 12.2. Output Saturation Voltage 12.3. Output Leakage Current 12.4. Magnetic Thresholds REVISION 019 - 13 JUNE 2019 3901001881 Page 7 of 12 US1881 Hall Latch – High Sensitivity 13. Application Information 13.1. Typical Three-Wire Application Circuit 13.2. Two-Wire Circuit 13.3. Automotive and Harsh, Noisy Environments Three-Wire Circuit 14. Application Comments For proper operation, a 100nF bypass capacitor should be placed as close as possible to the device between the VDD and ground pin. For reverse voltage protection, it is recommended to connect a resistor or a diode in series with the VDD pin. When using a resistor, three points are important: - the resistor has to limit the reverse current to 50mA maximum (VCC / R1 ≤ 50mA) - the resulting device supply voltage VDD has to be higher than VDD min (VDD = VCC – R1.IDD) - the resistor has to withstand the power dissipated in reverse voltage condition (PD = VCC 2/ R1) When using a diode, a reverse current cannot flow and the voltage drop is almost constant (≈0.7V). Therefore, a 100Ω/0.25W resistor for 5V application and a diode for higher supply voltage are recommended. Both solutions provide the required reverse voltage protection. When a weak power supply is used or when the device is intended to be used in noisy environment, it is recommended that figure 13.3 from the Application Information section is used. The low-pass filter formed by R1 and C1 and the zener diode Z1 bypass the disturbances or voltage spikes occurring on the device supply voltage VDD. The diode D1 provides additional reverse voltage protection. REVISION 019 - 13 JUNE 2019 3901001881 Page 8 of 12 US1881 Hall Latch – High Sensitivity 15. Standard information regarding manufacturability of Melexis products with different soldering processes Our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity level according to following test methods: Reflow Soldering SMD’s (Surface Mount Devices)   IPC/JEDEC J-STD-020 Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices (classification reflow profiles according to table 5-2) EIA/JEDEC JESD22-A113 Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing (reflow profiles according to table 2) Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)   EN60749-20 Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat EIA/JEDEC JESD22-B106 and EN60749-15 Resistance to soldering temperature for through-hole mounted devices Iron Soldering THD’s (Through Hole Devices)  EN60749-15 Resistance to soldering temperature for through-hole mounted devices Solderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)  EIA/JEDEC JESD22-B102 and EN60749-21 Solderability For all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature, temperature gradient, temperature profile etc) additional classification and qualification tests have to be agreed upon with Melexis. The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of adhesive strength between device and board. Melexis is contributing to global environmental conservation by promoting lead free solutions. For more information on qualifications of RoHS compliant products (RoHS = European directive on the Restriction Of the use of certain Hazardous Substances) please visit the quality page on our website: http://www.melexis.com/quality.aspx 16. ESD Precautions Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). Always observe Electro Static Discharge control procedures whenever handling semiconductor products. REVISION 019 - 13 JUNE 2019 3901001881 Page 9 of 12 US1881 Hall Latch – High Sensitivity 17. Package Information 17.1. SE Package (TSOT-3L) Notes: 1. Dimension “D” and “E1” do not include mold flash or protrusions. Mold flash or protrusion shall not exceed 0.15mm on “D” and 0.25mm on “E” per side. 2. Dimension “b” does not include dambar protrusion. Marking: Top side :1yww 1 = part number (US1881) y = last digit of year ww = calendar week Bottom side: zzzz zzzz = last 4 digits for lot# Hall plate location 0.891 1.417 Notes: 1. All dimensions are in millimeters 0.275 END VIEW Package line TOP VIEW This table in mm min max A A1 A2 D E E1 L b c e e1  – 1.00 0.025 0.10 0.85 0.90 2.80 3.00 2.60 3.00 1.50 1.70 0.30 0.50 0.30 0.45 0.10 0.20 0.95 BSC 1.90 BSC 0° 8° REVISION 019 - 13 JUNE 2019 3901001881 Page 10 of 12 US1881 Hall Latch – High Sensitivity 17.2. UA Package (TO-92 flat) Notes: 1. 2. Mold flashes and protrusion are not included. Gate burrs shall not exceed 0.127mm on the top side. 2.0 1.4 0.425 This table in mm min max min max A D E F J L L1 S b1 b2 c e e1 2.80 3.20 3.90 4.30 1.40 1.60 0.00 0.20 2.51 2.72 14.0 15.0 1.55 1.75 0.63 0.84 0.35 0.44 0.43 0.52 0.35 0.44 2.51 2.57 1.24 1.30     5° MAX 5° REF 45° REF 3° REF REVISION 019 - 13 JUNE 2019 3901001881 Page 11 of 12 US1881 Hall Latch – High Sensitivity 18. Contact For the latest version of this document, go to our website at www.melexis.com. For additional information, please contact our Direct Sales team and get help for your specific needs: Europe, Africa Telephone: +32 13 67 04 95 Email : sales_europe@melexis.com Americas Telephone: +1 603 223 2362 Email : sales_usa@melexis.com Asia Email : sales_asia@melexis.com 19. Disclaimer The information furnished by Melexis herein (“Information”) is believed to be correct and accurate. Melexis disclaims (i) any and all liability in connection with or arising out of the furnishing, performance or use of the technical data or use of the product(s) as described herein (“Product”) (ii) any and all liability, including without limitation, special, consequential or incidental damages, and (iii) any and all warranties, express, statutory, implied, or by description, includ ing warranties of fitness for particular purpose, noninfringement and merchantability. No obligation or liability shall arise or flow out of Melexis’ rendering of technical or other services. The Information is provided "as is” and Melexis reserves the right to change the Information at any time and without notice. Therefore, before placing orders and/or prior to designing the Product into a system, users or any third party should obtain the latest version of the relevant information to verify that the information being relied upon is current. Users or any third party must further determine the suitability of the Product for its application, including the level of reliability required and determine whether it is fit for a particular purpose. The Information is proprietary and/or confidential information of Melexis and the use thereof or anything described by the Information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights. This document as well as the Product(s) may be subject to export control regulations. Please be aware that export might require a prior authorization from competent authorities. The Product(s) are intended for use in normal commercial applications. Unless otherwise agreed upon in writing, the Product(s) are not designed, authorized or warranted to be suitable in applications requiring extended temperature range and/or unusual environmental requirements. High reliability applications, such as medical life-support or lifesustaining equipment are specifically not recommended by Melexis. The Product(s) may not be used for the following applications subject to export control regulations: the development, product ion, processing, operation, maintenance, storage, recognition or proliferation of 1) chemical, biological or nuclear weapons, or for the development, production, maintenance o r storage of missiles for such weapons: 2) civil firearms, including spare parts or ammunition for such arms; 3) defense related products, or other material for military use or for law enforcement; 4) any applications that, alone or in combination with other goods, substances or organisms could cause serious harm to persons or goods and that can be used as a means of violence in an armed conflict or any similar violent situation. The Products sold by Melexis are subject to the terms and conditions as specified in the Terms of Sale, which can be found at https://www.melexis.com/en/legal/terms-andconditions. This document supersedes and replaces all prior information regarding the Product(s) and/or previous versions of this document. Melexis NV © - No part of this document may be reproduced without the prior written consent of Melexis. (2016) ISO/TS 16949 and ISO14001 Certified REVISION 019 - 13 JUNE 2019 3901001881 Page 12 of 12