US2884LSE-AAA-000-RE

US2884 Bipolar Hall Switch – Very High Sensitivity Features and Benefits        Applications        Wide operating voltage range from 3.5V to 24V Very high magnetic sensitivity CMOS technology Chopper-stabilized amplifier stage Low current consumption Open drain output Thin SOT23 3L and flat TO-92 3L Automotive, Consumer and Industrial Solid-state switch Brushless DC motor commutation Speed detection Linear position detection Angular position detection Proximity detection Ordering information Product code Temperature Code Package Code Option code Packing form code US2884 L SE AAA-000 RE Legend: Temperature code: Package Code: Packing Form: Ordering Example: L(-40 to 150°C) SE = TSOT-23L RE = Reel US2884LSE-AAA-000-RE 1. Functional Diagram 2. General Description The Melexis US2884 is a bipolar Hall-effect switch designed in mixed signal CMOS technology. The device integrates a voltage regulator, Hall sensor with dynamic offset cancellation system, Schmitt trigger and an open-drain output driver, all in a single package. Due to its wide operating voltage range and temperature range it is particularly suitable for use in automotive and BLDC motor applications. The device is delivered in a Thin Small Outline Transistor (TSOT) RoHS compliant 3-lead package. REVISION 007 – MAY 7, 2019 3901002884 Page 1 of 11 US2884 Bipolar Hall Switch – Very High Sensitivity Contents 1. Functional Diagram................................................................................................................................................................ 1 2. General Description ............................................................................................................................................................... 1 3. Glossary of Terms .................................................................................................................................................................. 3 4. Absolute Maximum Ratings ................................................................................................................................................... 3 5. Pin Definitions and Descriptions ............................................................................................................................................ 3 6. General Electrical Specifications ............................................................................................................................................ 4 7. Magnetic Specifications ......................................................................................................................................................... 4 8. Output Behaviour versus Magnetic Pole ................................................................................................................................ 4 9. Detailed General Description ................................................................................................................................................. 5 10. Unique Features .................................................................................................................................................................. 5 11. Performance Graphs ............................................................................................................................................................ 6 11.1. Magnetic parameters vs. TA .............................................................................................................................................. 6 11.2. Magnetic parameters vs. VDD ........................................................................................................................................... 6 11.3. VDSon vs. TA ...................................................................................................................................................................... 6 11.4. VDSon vs. VDD ................................................................................................................................................................... 6 11.5. IDD vs. TA ........................................................................................................................................................................... 6 11.6. IDD vs. VDD ........................................................................................................................................................................ 6 11.7. IOFF vs. TA .......................................................................................................................................................................... 7 11.8. IOFF vs. VDD ........................................................................................................................................................................... 7 12. Test Conditions.................................................................................................................................................................... 7 12.1. Supply Current ................................................................................................................................................................... 7 12.2. Output Saturation Voltage ................................................................................................................................................ 7 12.3. Output Leakage Current .................................................................................................................................................... 7 12.4. Magnetic Thresholds.......................................................................................................................................................... 7 13. Application Information ....................................................................................................................................................... 8 13.1. Typical Three-Wire Application Circuit ............................................................................................................................. 8 13.2. Two-Wire Circuit ................................................................................................................................................................ 8 13.3. Automotive and Harsh, Noisy Environments Three-Wire Circuit .................................................................................... 8 14. Application Comments......................................................................................................................................................... 8 15. Standard information regarding manufacturability of Melexis products with different soldering processes ........................ 9 16. ESD Precautions................................................................................................................................................................... 9 17. SE Package Information (TSOT-3L) ..................................................................................................................................... 10 18. Contact .............................................................................................................................................................................. 10 19. Disclaimer.......................................................................................................................................................................... 11 REVISION 007 – MAY 7, 2019 3901002884 Page 2 of 11 US2884 Bipolar Hall Switch – Very High Sensitivity 3. Glossary of Terms MilliTesla (mT), Gauss RoHS TSOT ESD BLDC Units of magnetic flux density: 1mT = 10 Gauss Restriction of Hazardous Substances Thin Small Outline Transistor (TSOT package) – also referred with the Melexis package code “SE” Electro-Static Discharge Brush-Less Direct-Current 4. Absolute Maximum Ratings Parameter Supply Voltage Supply Current Output Voltage Output Current Operating Temperature Range Storage Temperature Range Maximum Junction Temperature Symbol VDD IDD VOUT IOUT TA TS TJ Value 28 50 28 50 -40 to 150 -50 to 150 165 Units V mA V mA C °C °C Table 1: Absolute maximum ratings Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum- rated conditions for extended periods may affect device reliability. 5. Pin Definitions and Descriptions SE Pin № 1 2 3 UA Pin № 1 3 2 Name VDD OUT GND Type Supply Output Ground Function Supply Voltage pin Open Drain Output pin Ground pin Table 2: Pin definitions and descriptions REVISION 007 – MAY 7, 2019 3901002884 Page 3 of 11 US2884 Bipolar Hall Switch – Very High Sensitivity 6. General Electrical Specifications o DC Operating Parameters TA = 25 C, VDD = 3.5V to 24V (unless otherwise specified) Parameter Supply Voltage Symbol VDD Test Conditions Operating Min 3.5 Typ Supply Current IDD B < BRP Output Saturation Voltage VDSon IOUT = 20mA, B > BOP Output Leakage Current IOFF B < BRP, VOUT = 24V 0.01 Output Rise Time tr RL = 1kΩ, CL = 20pF 0.25 µs Output Fall Time tf RL = 1kΩ, CL = 20pF 0.25 Maximum Switching Frequency FSW 10 µs KHz Package Thermal Resistance RTH 301 °C/W Single layer (1S) Jedec board Max 24 Units V 5 mA 0.5 V 10 µA Table 3: Electrical specifications 7. Magnetic Specifications DC Operating Parameters VDD = 3.5V to 24V (unless otherwise specified) Parameter Operating Point Release Point Hysteresis Symbol BOP BRP BHYST Test Conditions Min -2 -6 1 Typ Max 6 2 6 Units mT mT mT Table 4: Magnetic specifications Note: For typical values, please refer to the performance graphs in section 11 8. Output Behaviour versus Magnetic Pole DC Operating Parameters TA = -40 C too150 C, VDDo = 3.5V to 24V (unless otherwise specified) Parameter Test Conditions OUT South pole B > BOP Low North pole B < BRP High Table 5: Output behaviour versus magnetic pole REVISION 007 – MAY 7, 2019 3901002884 Page 4 of 11 US2884 Bipolar Hall Switch – Very High Sensitivity 9. Detailed General Description Based on mixed signal CMOS technology, Melexis US2884 is a Hall-effect device with very high magnetic sensitivity. It allows using generic magnets, weak magnets or larger air gap. The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed with Hall sensors and amplifiers. The CMOS technology makes this advanced technique possible and contributes to smaller chip size and lower current consumption than bipolar technology. The small chip size is also an important factor to minimize the effect of physical stress. This combination results in more stable magnetic characteristics and enables faster and more precise design. The wide operating voltage from 3.5V to 24V, wide operating temperature according to “L” specification and low current consumption make this device especially suitable for automotive and BLDC motor applications. The output signal is open-drain type. Such output allows simple connectivity with TTL or CMOS logic by using a pull-up resistor tied between a pull-up voltage and the device output. 10. Unique Features The US2884 exhibits bipolar magnetic switching characteristics. Therefore, it operates with both south and north poles. Typically, the device behaves as a latch with symmetric operating and release switching points (BOP=|BRP|). This means magnetic fields with equivalent strength and opposite direction drive the output high and low. Removing the magnetic field (B→0) keeps the output in its previous state. This latching property defines the device as a magnetic memory. Depending on the magnetic switching points, the device may also behave as a unipolar positive switch (BOP and BRP strictly positive) or negative switch (BOP and BRP strictly negative). That is the output can be set high and low by only using one magnetic pole. In such case, removing the magnetic field changes the output level. In latch, positive or negative switch behaviour, a magnetic hysteresis BHYST keeps BOP and BRP separated by a minimal value. This hysteresis prevents output oscillation near the switching point. REVISION 007 – MAY 7, 2019 3901002884 Page 5 of 11 US2884 Bipolar Hall Switch – Very High Sensitivity 11. Performance Graphs 11.1. Magnetic parameters vs. TA 11.2. Magnetic 11.3. VDSon vs. TA 11.4. VDSon vs. VDD 11.5. IDD vs. TA 11.6. IDD vs. VDD REVISION 007 – MAY 7, 2019 3901002884 parameters vs. VDD Page 6 of 11 US2884 Bipolar Hall Switch – Very High Sensitivity 11.7. IOFF vs. TA 11.8. IOFF vs. VDD 12. Test Conditions Note : DUT = Device Under Test 12.1. Supply Current 12.2. Output Saturation Voltage 12.3. Output Leakage Current 12.4. Magnetic Thresholds REVISION 007 – MAY 7, 2019 3901002884 Page 7 of 11 US2884 Bipolar Hall Switch – Very High Sensitivity 13. Application Information 13.1. Typical Three-Wire Application Circuit 13.2. Two-Wire Circuit 13.3. Automotive and Harsh, Noisy Environments Three-Wire Circuit 14. Application Comments For proper operation, a 100nF bypass capacitor should be placed as close as possible to the device between the VDD and ground pin. For reverse voltage protection, it is recommended to connect a resistor or a diode in series with the VDD pin. When using a resistor, three points are important: - the resistor has to limit the reverse current to 50mA maximum (VCC / R1 ≤ 50mA) - the resulting device supply voltage VDD has to be higher than VDD min (VDD = VCC – R1.IDD) - the resistor has to withstand the power dissipated in reverse voltage condition (PD = VCC2 / R1) When using a diode, a reverse current cannot flow and the voltage drop is almost constant (≈0.7V). Therefore, a 100Ω/0.25W resistor for 5V application and a diode for higher supply voltage are recommended. Both solutions provide the required reverse voltage protection. When a weak power supply is used or when the device is intended to be used in noisy environment, it is recommended that figure 13.3 from the Application Information section is used. The low-pass filter formed by R1 and C1 and the zener diode Z1 bypass the disturbances or voltage spikes occurring on the device supply voltage VDD. The diode D1 provides additional reverse voltage protection. REVISION 007 – MAY 7, 2019 3901002884 Page 8 of 11 US2884 Bipolar Hall Switch – Very High Sensitivity 15. Standard information regarding manufacturability of Melexis products with different soldering processes Our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity level according to following test methods: Reflow Soldering SMD’s (Surface Mount Devices)   IPC/JEDEC J-STD-020 Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices (classification reflow profiles according to table 5-2) EIA/JEDEC JESD22-A113 Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing (reflow profiles according to table 2) Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)   EN60749-20 Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat EIA/JEDEC JESD22-B106 and EN60749-15 Resistance to soldering temperature for through-hole mounted devices Iron Soldering THD’s (Through Hole Devices)  EN60749-15 Resistance to soldering temperature for through-hole mounted devices Solderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)  EIA/JEDEC JESD22-B102 and EN60749-21 Solderability For all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature, temperature gradient, temperature profile etc) additional classification and qualification tests have to be agreed upon with Melexis. The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of adhesive strength between device and board. Melexis is contributing to global environmental conservation by promoting lead free solutions. For more information on qualifications of RoHS compliant products (RoHS = European directive on the Restriction Of the use of certain Hazardous Substances) please visit the quality page on our website: http://www.melexis.com/quality.aspx 16. ESD Precautions Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). Always observe Electro Static Discharge control procedures whenever handling semiconductor products. REVISION 007 – MAY 7, 2019 3901002884 Page 9 of 11 US2884 Bipolar Hall Switch – Very High Sensitivity 17. SE Package Information (TSOT-3L) Notes: 1. Dimension “D” and “E1” do not include mold flash or protrusions. Mold flash or protrusion shall not exceed 0.15mm on “D” and 0.25mm on “E” per side. Hall plate location 1.417 2. Dimension “b” does not include dambar protrusion. 0.891 3. All dimensions are in millimeters Marking: 0.275 Top side: 2884 – Name of the Device Bottom side : xyww SIDE VIEW x = Last digit of lot number y = last digit of year ww = calendar week Package line TOP VIEW This table in mm A A1 A2 D E E1 L b c e e1  min max 0.85 0.90 2.80 3.00 2.60 3.00 1.50 1.70 0.30 0.50 0.30 0.45 0.10 0.20 0.95 BSC 1.90 BSC 0° 8° – 1.00 0.025 0.10 REVISION 007 – MAY 7, 2019 3901002884 Page 10 of 11 US2884 Bipolar Hall Switch – Very High Sensitivity 18. Contact For the latest version of this document, go to our website at www.melexis.com. For additional information, please contact our Direct Sales team and get help for your specific needs: Europe, Africa Telephone: +32 13 67 04 95 Email : sales_europe@melexis.com Americas Telephone: +1 603 223 2362 Email : sales_usa@melexis.com Asia Email : sales_asia@melexis.com 19. 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This document supersedes and replaces all prior information regarding the Product(s) and/or previous versions of this document. Melexis NV © - No part of this document may be reproduced without the prior written consent of Melexis. (2016) ISO/TS 16949 and ISO14001 Certified REVISION 007 – MAY 7, 2019 3901002884 Page 11 of 11