US5681ESE-AAA-000-RE

US5681 Unipolar Hall Switch – High Sensitivity Features and Benefits        Applications      Wide operating voltage range from 3.5V to 24V High sensitivity CMOS technology Chopper-stabilized amplifier stage Low current consumption Open drain output Thin SOT23 3L RoHS Compliant package Automotive, Consumer and Industrial Solid-state switch Interrupter Current detector Proximity detection Ordering information Product code US5681 US5681 Temperature Code E K Legend: Temperature code: Package Code: Packing Form: Ordering Example: Package Code SE SE 2. General Description OUT VDD ESD protection DIG POR Temperature compensation DAMP Hall Plate GND REVISION 007 – APRIL 05, 2019 3901005681 Packing form code RE RE E(-40 to 85°C) K (-40 to 125°C) SE = TSOT-23L RE = Reel US5681ESE-AAA-000-RE 1. Functional Diagram Voltage Regulator Option code AAA-000 AAA-000 Oscillator and Bias ESD protection reference DIDO COMP The Melexis US5681 is a unipolar Hall-effect switch designed in mixed signal CMOS technology. The device integrates a voltage regulator; Hall sensor with advanced Correlated Double Sampling (CDS) offset cancellation system and an open-drain output driver, all in a single package. Thanks to its wide operating voltage range and temperature range, it is suitable for use in automotive and solid state switch applications. The device is delivered in a Thin Small Outline Transistor (TSOT) 3-lead RoHS compliant package. Page 1 of 11 US5681 Unipolar Hall Switch – High Sensitivity Contents 1. Functional Diagram ................................................................................................................................1 2. General Description................................................................................................................................1 3. Glossary of Terms ...................................................................................................................................3 4. Absolute Maximum Ratings ....................................................................................................................3 5. Pin Definitions and Descriptions .............................................................................................................3 6. General Electrical Specifications .............................................................................................................4 7. Magnetic Specifications ..........................................................................................................................4 8. Output Behaviour versus Magnetic Pole ................................................................................................5 9. Detailed General Description..................................................................................................................5 10. Unique Features ...................................................................................................................................5 11. Performance Graphs ............................................................................................................................6 11.1. Magnetic parameters vs. TA ............................................................................................................. 6 11.2. Magnetic parameters vs. VDD ........................................................................................................... 6 11.3. VDSon vs. TA ......................................................................................................................................... 6 11.4. VDSon vs. VDD ....................................................................................................................................... 6 11.5. IDD vs. TA ............................................................................................................................................. 6 11.6. IDD vs. VDD ........................................................................................................................................... 6 12. Test Conditions.....................................................................................................................................7 12.1. Supply Current .................................................................................................................................. 7 12.2. Output Saturation Voltage ............................................................................................................... 7 12.3. Output Leakage Current ................................................................................................................... 7 12.4. Magnetic Thresholds ........................................................................................................................ 7 13. Application Information........................................................................................................................8 13.1. Typical Three-Wire Application Circuit ............................................................................................ 8 13.2. Two-Wire Circuit ............................................................................................................................... 8 13.3. Automotive and Harsh, Noisy Environments Three-Wire Circuit .................................................. 8 14. Application Comments .........................................................................................................................8 15. Standard information regarding manufacturability of Melexis products with different soldering processes...............................................................................................................................................9 16. ESD Precautions ...................................................................................................................................9 17. SE Package Information (TSOT-3L) ......................................................................................................10 18. Contact ...............................................................................................................................................11 19. Disclaimer...........................................................................................................................................11 REVISION 007 – APRIL 05, 2019 3901005681 Page 2 of 11 US5681 Unipolar Hall Switch – High Sensitivity 3. Glossary of Terms MilliTesla (mT), Gauss RoHS TSOT ESD Units of magnetic flux density: 1mT = 10 Gauss Restriction of Hazardous Substances Thin Small Outline Transistor (TSOT package) – also referred with the Melexis package code “SE” Electro-Static Discharge 4. Absolute Maximum Ratings Parameter Symbol Value Units Supply Voltage VDD 28 V Supply Current IDD 50 mA Output Voltage VOUT 28 V Output Current IOUT 50 mA Operating Temperature Range TA -40 to 125 C Storage Temperature Range Maximum Junction Temperature TS -50 to 150 C TJ 165 C Table 1: Absolute maximum ratings Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 5. Pin Definitions and Descriptions Pin No Name Type Function 1 VDD Supply Supply Voltage pin 2 OUT Output Open Drain Output pin 3 GND Ground Ground pin Table 2: Pin definitions and descriptions REVISION 007 – APRIL 05, 2019 3901005681 Page 3 of 11 US5681 Unipolar Hall Switch – High Sensitivity 6. General Electrical Specifications o DC Operating Parameters TA = 25 C, VDD = 12V (unless otherwise specified) Parameter Supply Voltage Supply Current Output Saturation Voltage Output Leakage Current Output Rise Time Output Fall Time Output Update Frequency (1) Power-On Time Package Thermal Resistance Symbol VDD IDD VDSon IOFF tr tf FOUT tON RTH Test Conditions Operating B < BRP IOUT = 20mA, B > BOP B < BRP, VOUT = 24V RL = 1k, CL = 20pF RL = 1k, CL = 20pF Min 3.5 0.5 Typ 2.5 0.3 0.01 0.25 0.25 25 Max 24 5 0.5 10 100 Single layer (1S) Jedec board 301 Units V mA V A s s kHz s °C/W Table 3: Electrical specification 7. Magnetic Specifications o DC Operating Parameters TA = 25 C, VDD = 12V (unless otherwise specified) Parameter Operating Point Release Point Hysteresis Symbol Test Conditions BOP BRP BHYST Min 3.8 2 1.5 Typ 5.5 3.5 2 Max 7.2 5 2.7 Units mT mT mT Table 4: Magnetic specifications o o o o DC Operating Parameters TA = -40 C to 125 C (K-version), TA = -40 C to 85 C (E-version), VDD = 12V Parameter Operating Point Release Point Hysteresis Symbol Test Conditions BOP BRP BHYST Min 3.4 1.8 1 Typ Max 7.7 5.4 2.8 Units mT mT mT Table 5: Magnetic specifications 1 The Power-On Time represents the time from reaching the power-on reset level to the first refresh of the output (first valid output state).Value according simulation only, not subject to production test. REVISION 007 – APRIL 05, 2019 3901005681 Page 4 of 11 US5681 Unipolar Hall Switch – High Sensitivity 8. Output Behaviour versus Magnetic Pole o o DC Operating Parameters TA = -40 C to 125 C, VDD = 3.5V to 24V (unless otherwise specified) Parameter Test Conditions OUT South pole B > BOP Low Null or weak magnetic field B  0 or B < BRP High North pole B > BOP High Table 6: Output behaviour versus magnetic pole OUT = low (VDSon) 9. Detailed General Description Based on mixed signal CMOS technology, Melexis US5681 is a Hall-effect device with high magnetic sensitivity. Its sensitivity enables high accuracy in position sensing by the use of small air gap. The Correlated Double Sampling (CDS) technique suppresses the offset generally observed with Hall sensors and amplifiers. The CMOS technology makes this advanced technique possible and contributes to smaller chip size and lower current consumption than bipolar technology. The small chip size is also an important factor to minimize the effect of physical stress. This combination results in more accurate and stable magnetic characteristics, and enables faster and more precise design. The wide operating voltage from 3.5V to 24V and low current consumption make this device especially suitable for solid state switch applications. The output signal is open-drain type. Such output allows simple connectivity with TTL or CMOS logic by using a pull-up resistor tied between a pull-up voltage and the device output. 10. Unique Features The US5681 exhibits unipolar magnetic switching characteristics. Therefore, it operates only with one magnetic pole. Output level The US5681 device is south pole active: Applying a south magnetic pole greater than BOP facing the branded side of the package switches the output low. OUT switches to High OUT switches to Low OUT = High Removing the magnetic field (B0) switches the output high. The use of the opposite magnetic pole facing the branded side does not affect the output state. OUT = Low 0mT BRP BOP Flux density Unipolar switch characteristic A magnetic hysteresis BHYST keeps BOP and BRP separated by a minimal value. This hysteresis prevents output oscillation near the switching point. REVISION 007 – APRIL 05, 2019 3901005681 Page 5 of 11 US5681 Unipolar Hall Switch – High Sensitivity 11. Performance Graphs 11.1. Magnetic parameters vs. TA Bop, Vdd = 24V Brp, Vdd = 3.5V Brp, Vdd = 24V Bop -40 Bop 125 Brp -40 Magnetic field [mT] Magnetic field [mT] Bop, Vdd = 3.5V 11.2. Magnetic parameters vs. VDD Vdd (Volts) TA (oC) 11.3. VDSon vs. TA 11.4. VDSon vs. VDD Vdd = 24V Ta = -40 oC Vdson (Volts) TA (oC) 11.5. IDD vs. TA Vdd (Volts) 11.6. IDD vs. VDD Ta = -40 Ta = 25 Vdd = 12V Vdd = 24V Ta = 85 Ta = 125 Idd (mA) Vdd = 5V Idd (mA) Vdd = 3.5V TA (oC) REVISION 007 – APRIL 05, 2019 3901005681 Ta = 125 oC Vdson (Volts) Vdd = 3.5V Vdd (Volt) Page 6 of 11 US5681 Unipolar Hall Switch – High Sensitivity 12. Test Conditions Note : DUT = Device Under Test 12.1. Supply Current IDD A 12.2. Output Saturation Voltage OUT VDD VDD DUT VDD VDD 3.5 / 24V GND DUT OUT V 20mA GND Note 1 - The supply current IDD represents the static supply current. OUT is left open during measurement. Note 1 - The output saturation voltage VDSon is measured at VDD = 3.5V and VDD = 24V. Note 2 - The device is put under magnetic field with BBOP. 12.3. Output Leakage Current 12.4. Magnetic Thresholds VDSon 10Kohms IOFF VDD DUT OUT 24V VDD VDD A GND Note 1 - The device is put under magnetic field with B