US5682ESE-AAA-000-RE

US5682 Unipolar Hall Switch – High Sensitivity Inverted Output Features and Benefits  Applications      Wide operating voltage range from 3.5V to 24V High sensitivity CMOS technology Chopper-stabilized amplifier stage Low current consumption Open drain output Inverted Output Thin SOT23 3L RoHS Compliant package        Automotive, Consumer and Industrial Solid-state switch Interrupter Current detector Proximity detection Ordering information Product code Temperature Code Package Code Option code Packing form code US5682 US5682 E K SE SE AAA-000 AAA-000 RE RE Legend: Temperature code: Package Code: Packing Form: Ordering Example: E(-40 to 85°C) K (-40 to 125°C) SE = TSOT-23L RE = Reel US5682ESE-AAA-000-RE 1. Functional Diagram 2. General Description OUT VDD Voltage Regulator ESD protection DIG POR Temperature compensation DAMP Hall Plate GND REVISION 008 – APRIL 05, 2019 3901005682 Oscillator and Bias ESD protection reference DIDO COMP The Melexis US5682 is a unipolar Hall-effect switch designed in mixed signal CMOS technology. The device integrates a voltage regulator, Hall sensor with advanced Correlated Double Sampling (CDS) offset cancellation system and an open-drain output driver, all in a single package. Thanks to its wide operating voltage range and temperature range, it is suitable for use in automotive and solid state switch applications. The device is delivered in a Thin Small Outline Transistor (TSOT) 3-lead RoHS compliant package. Page 1 of 11 US5682 Unipolar Hall Switch – High Sensitivity Inverted Output Contents 1. Functional Diagram .............................................................................................................................................. 1 2. General Description .............................................................................................................................................. 1 3. Glossary of Terms ................................................................................................................................................. 3 4. Absolute Maximum Ratings .................................................................................................................................. 3 5. Pin Definitions and Descriptions ........................................................................................................................... 3 6. General Electrical Specifications ........................................................................................................................... 4 7. Magnetic Specifications ........................................................................................................................................ 4 8. Output Behaviour versus Magnetic Pole............................................................................................................... 5 9. Detailed General Description ................................................................................................................................ 5 10. Unique Features ................................................................................................................................................. 5 11. Performance Graphs........................................................................................................................................... 6 11.1. Magnetic parameters vs. TA ....................................................................................................................... 6 11.2. Magnetic parameters vs. VDD ..................................................................................................................... 6 11.3. VDSon vs. TA .................................................................................................................................................. 6 11.4. VDSon vs. VDD ................................................................................................................................................ 6 11.5. IDD vs. TA ..................................................................................................................................................... 6 11.6. IDD vs. VDD ................................................................................................................................................... 6 11.7. IOFF vs. TA .................................................................................................................................................... 7 11.8. IOFF vs. VDD .................................................................................................................................................. 7 12. Test Conditions................................................................................................................................................... 7 12.1. Supply Current ........................................................................................................................................... 7 12.2. Output Saturation Voltage ......................................................................................................................... 7 12.3. Output Leakage Current ............................................................................................................................ 7 12.4. Magnetic Thresholds ................................................................................................................................. 7 13. Application Information...................................................................................................................................... 8 13.1. Typical Three-Wire Application Circuit ...................................................................................................... 8 13.2. Two-Wire Circuit ........................................................................................................................................ 8 13.3. Automotive and Harsh, Noisy Environments Three-Wire Circuit............................................................... 8 14. Application Comments ....................................................................................................................................... 8 15. Standard information regarding manufacturability of Melexis products with different soldering processes....... 9 16. ESD Precautions.................................................................................................................................................. 9 17. SE Package Information (TSOT-3L) .................................................................................................................... 10 18. Contact ............................................................................................................................................................. 11 19. Disclaimer......................................................................................................................................................... 11 REVISION 008 – APRIL 05, 2019 3901005682 Page 2 of 11 US5682 Unipolar Hall Switch – High Sensitivity Inverted Output 3. Glossary of Terms MilliTesla (mT), Gauss RoHS TSOT ESD Units of magnetic flux density: 1mT = 10 Gauss Restriction of Hazardous Substances Thin Small Outline Transistor (TSOT package) – also referred with the Melexis package code “SE” Electro-Static Discharge 4. Absolute Maximum Ratings Parameter Supply Voltage Supply Current Output Voltage Output Current Operating Temperature Range Symbol VDD IDD VOUT IOUT Value 28 50 28 50 Units V mA V mA TA -40 to 85 C Storage Temperature Range TS -50 to 150 C Maximum Junction Temperature TJ 165 C Table 1: Absolute maximum ratings Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 5. Pin Definitions and Descriptions Pin No 1 2 3 Name VDD OUT GND Type Supply Output Ground Function Supply Voltage pin Open Drain Output pin Ground pin Table 2: Pin definitions and descriptions REVISION 008 – APRIL 05, 2019 3901005682 Page 3 of 11 US5682 Unipolar Hall Switch – High Sensitivity Inverted Output 6. General Electrical Specifications o DC Operating Parameters TA = 25 C, VDD = 12V (unless otherwise specified) Parameter Supply Voltage Supply Current Output Saturation Voltage Output Leakage Current Output Rise Time Output Fall Time Maximum Switching Frequency (1) Power-On Time Package Thermal Resistance Symbol VDD IDD VDSon IOFF tr tf FSW tON RTH Test Conditions Operating B < BRP IOUT = 20mA, B < BRP B > BOP, VOUT = 24V RL = 1k, CL = 20pF RL = 1k, CL = 20pF Min 3.5 0.5 Typ 2.5 0.3 0.01 0.25 0.25 5 Max 24 5 0.5 10 100 Single layer (1S) Jedec board 301 Units V mA V A s s KHz s °C/W Table 3: Electrical specifications 7. Magnetic Specifications o DC Operating Parameters TA = 25 C, VDD = 12V (unless otherwise specified) Parameter Operating Point Release Point Hysteresis Symbol Test Conditions BOP BRP BHYST Min 3.8 2 1.5 Typ 5.5 3.5 2 Max 7.2 5 2.7 Units mT mT mT Table 4: Magnetic specifications o o o o DC Operating Parameters TA = -40 C to 125 C (K-version), TA = -40 C to 85 C (E-version), VDD = 12V Parameter Operating Point Release Point Hysteresis Symbol Test Conditions BOP BRP BHYST Min 3.4 1.8 1 Typ Max 7.7 5.4 2.8 Units mT mT mT Table 5: Magnetic specifications 1 The Power-On Time represents the time from reaching the power-on reset level to the first refresh of the output (first valid output state).Value according simulation only, not subject to production test. REVISION 008 – APRIL 05, 2019 3901005682 Page 4 of 11 US5682 Unipolar Hall Switch – High Sensitivity Inverted Output 8. Output Behaviour versus Magnetic Pole o o DC Operating Parameters TA = -40 C to 125 C, VDD = 3.5V to 24V (unless otherwise specified) Parameter Test Conditions OUT South pole B > BOP High Null or weak magnetic field B  0 or B < BRP Low North pole B > BOP Low Table 6: Output behaviour versus magnetic pole 9. Detailed General Description OUT = High (≈VPU) Based on mixed signal CMOS technology, Melexis US5682 is a Hall-effect device with high magnetic sensitivity and inverted output. Its sensitivity enables high accuracy in position sensing by the use of small air gap. The Correlated Double Sampling (CDS) technique suppresses the offset generally observed with Hall sensors and amplifiers. The CMOS technology makes this advanced technique possible and contributes to smaller chip size and lower current consumption than bipolar technology. The small chip size is also an important factor to minimize the effect of physical stress. This combination results in more accurate and stable magnetic characteristics, and enables faster and more precise design. The wide operating voltage from 3.5V to 24V and low current consumption make this device especially suitable for solid state switch applications. The output signal is open-drain type. Such output allows simple connectivity with TTL or CMOS logic by using a pull-up resistor tied between a pull-up voltage and the device output. 10. Unique Features The US5682 exhibits unipolar magnetic switching characteristics. Therefore, it operates only with one magnetic pole. Output level OUT switches to High OUT switches to Low OUT = High The US5682 device is inverted output, south pole active: Applying a south magnetic pole greater than BOP facing the branded side of the package switches the output high. Removing the magnetic field (B0) switches the output low. The use of the opposite magnetic pole facing the branded side does not affect the output state. OUT = Low 0mT BRP BOP Flux density Unipolar switch characteristic A magnetic hysteresis BHYST keeps BOP and BRP separated by a minimal value. This hysteresis prevents output oscillation near the switching point. REVISION 008 – APRIL 05, 2019 3901005682 Page 5 of 11 US5682 Unipolar Hall Switch – High Sensitivity Inverted Output 11. Performance Graphs 11.1. Magnetic parameters vs. TA 11.2. Magnetic parameters vs. VDD 7.5 6 7 5.5 6.5 5 6 4.5 5 Magnetic Field(mT) Magnetic Field (mT) 5.5 4.5 4 3.5 3 2.5 2 4 3.5 3 2.5 2 1.5 1.5 1 0.5 Bop, Vdd=3.5V Bop, Vdd=24V 1 Brp, Vdd=24V Brp, Vdd=3.5V 0.5 Bhys, Vdd=24V Bhys, Vdd=3.5V Bop, Ta=85oC Brp, Ta=25oC Brp, Ta=85oC Bhys, Ta=25oC Bhys, Ta=85oC 0 0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 3 90 4 5 6 7 8 9 10 11 12 TA (o C) 13 14 15 16 17 18 19 20 21 22 23 24 VDD (Volts) 11.3. VDSon vs. TA 11.4. VDSon vs. VDD 0.3 0.3 0.25 0.25 0.2 0.2 VDSon (Volts) VDSon (Volts) Bop, Ta=25oC 0.15 0.15 0.1 0.1 VDD=3.5V VDD=12V VDD=24V Ta=-40oC 0.05 0.05 Ta=25oC Ta=85oC 0 0 -40 -30 -20 -10 0 10 20 30 Ta (o C) 40 50 60 70 80 11.5. IDD vs. TA 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 VDD (Volts) 11.6. IDD vs. VDD 4 4 3.5 3.5 3 3 2.5 2.5 IDD (mA) IDD (mA) 3 90 2 1.5 2 1.5 1 1 VDD=3.5V Ta=-40oC VDD=12V 0.5 Ta=25oC 0.5 VDD=24V Ta=85oC 0 0 -40 -30 -20 -10 0 10 20 30 Ta (o C) REVISION 008 – APRIL 05, 2019 3901005682 40 50 60 70 80 90 3 4 5 6 7 8 9 10 11 12 13 14 15 VDD (Volts) 16 17 18 19 20 21 22 23 24 Page 6 of 11 US5682 Unipolar Hall Switch – High Sensitivity Inverted Output 11.7. IOFF vs. TA 11.8. IOFF vs. VDD 0.2 0.2 VDD=3.5V 0.18 0.18 VDD=12V VDD=24V 0.16 0.16 0.12 0.12 Ioff (μA) 0.14 Ioff (μA) 0.14 0.1 0.1 0.08 0.08 Ta=-40oC 0.06 0.06 Ta=25oC Ta=85oC 0.04 0.04 0.02 0.02 0 0 -40 -30 -20 -10 0 10 20 30 Ta (o C) 40 50 60 70 80 90 3 4 5 6 7 8 9 10 11 12 13 14 15 VDD (Volts) 16 17 18 19 20 21 22 23 24 12. Test Conditions Note : DUT = Device Under Test 12.1. Supply Current IDD A 12.2. Output Saturation Voltage OUT VDD VDD DUT OUT DUT VDD GND VDD 3.5 / 24V 20mA GND Note 1 - The supply current IDD represents the static supply current. OUT is left open during measurement. Note 1 - The output saturation voltage VDSon is measured at VDD = 3.5V and VDD = 24V. Note 2 - The device is put under magnetic field with B