1N4448

FAST SWITCHING DIODES 1N4448 FEATURES
Silicon Epitaxial Planar Diode
Fast switching diode
This diode is also available in other case styles including: the SOD-123 case with the type designation 1N4448W, the MiniMELF case with the type designation LL4448, and the SOT23 case with the type designation MECHANICAL DATA
Case: DO-35
Weight: apprax: 0.13gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified Symbol Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz Surge Forward Current at t < 1 s and Tj = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 75 100 1501) Unit V V mA VR V RM I0 IFSM Ptot Tj TS 500 5001) 175 –65 to +175 mA mW °C °C Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. MIC INVESTMENTS (CHINA) COMPANY LIMITED ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Forward Voltage at IF = 5 mA at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 °C Reverse Breakdown Voltage tested with 100 µA Pulses Capacitance at VF = VR = 0 V Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω Thermal Resistance Junction to Ambient Air Recification Efficiency at f = 100 MHz, VRF = 2 V 1) Min. 0.62 – – – – 100 – – Typ. – – – – – – – – Max. 0.72 1 25 5 50 – 4 4 Unit V V nA µA µA V pF ns VF VF IR IR IR V(BR)R Ctot trr RthJA ηv – 0.45 – – 3501) – K/W – Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Rectification Efficiency Measurement Circuit RATINGS AND CHARACTERISTIC CURVES 1N4448 RATINGS AND CHARACTERISTIC CURVES 1N4448