M2012Y

MICRO ELECTRONICS M2012Y HIGH BRIGHTNESS AMBER SURFACE LIGHTING FEATURES: GaAsP/GaP Amber Chip Amber Diffused Lens Low Power Requirements Wide Viewing Angle ABSOLUTE MAXIMUM RATINGS Power dissipation/Chip Continuous Forward Current/Chip Peak Forward Current/Chip (*Pulse Width = 1ms , Duty Ratio = 1/10) Reverse Voltage Operating Temperature Range Storage Temperature Range Solder Temperature (1/16 Inch from body) Maximum Soldering Time( ≤260°C) (Ta=25°C) Pd IF *IFP VR Topr Tstg 60mW 20mA 100mA 5V -20 to +80°C -25 to +85°C 260 ℃ 5 sec ELECTRO-OPTICAL CHARACTERISTICS PARAMETER Forward Voltage/Chip Reverse Current/Chip Peak Wavelength Dominant Wavelength Spectral Line Half Width Luminous Intensity (Ta=25°C) MIN TYP 2.1 589 590 35 5 15 MAX UNIT 2.8 100 CONDITIONS IF=20mA VR=5V IF=20mA IF=20mA IF=20mA IF=10mA/Chip 16/5/2005 Sheet 1 of 2 SYMBOL VF IR λp λd Δλ IV V μA nm nm nm mcd M2012Y 16/5/2005 Sheet 2 of 2