US4881
CMOS Low Voltage High Sensitivity Latch Preliminary Datasheet
Features and Benefits
• • • • • • • • •
Chopper stabilized amplifier stage Optimized for BDC motor applications New miniature package / thin, high reliability package Operation down to 2.2V CMOS for optimum stability, quality, and cost Low IDD current
Applications
Solid state switch Brushless DC motor commutation Speed sensing
Ordering Information
Part No. US4881 US4881
Temperature Suffix Package Temperature Range E SO or UA -40 to 85oC Extended L SO or UA -40 to 150oC Automotive Contact factory or sales representative for legacy temperature code options
ry a in im l re P
Functional Diagram
Description
The US4881 is a bipolar Hall effect sensor IC fabricated from mixed signal CMOS technology. It incorporates advanced chopper stabilization techniques to provide accurate and stable magnetic switch points. There are many applications for this HED in addition to those listed above. The design specifications and performance have been optimized for commutation applications in brushless DC motors and automotive speed sensing. The output transistor will be latched on (BOP) in the presence of a sufficiently s trong South pole magnetic field facing the marked side of the package. Similarly, the output will be latched off (BRP) in the presence of a North field.
SO Package Pin 1 - VD D Pin 2 - Output Pin 3 - GND
V DD
Output
Voltage Regulator
Chopper
GND UA Package Pin 1 - V D D Pin 2 - GND Pin 3 - Output
The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be latched on (BOP) in the presence of a sufficiently strong North pole magnetic field subjected to the marked face.
Note: Static sensitive device; please observe ESD precautions. Re verse VDD protection is not included. For reverse voltage protec tion, a 100 Ω resistor in series with VDD is recommended. US4881 CMOS Low Voltage High Sensitivity Latch 3901004881 Rev 1.5 24/July/01 Page 1
US4881
CMOS Low Voltage High Sensitivity Latch
US4881 Electrical Specifications
DC operating parameters: TA = 25oC, VDD = 12VDC (unless otherwise specified). Parameter Supply Voltage Supply Current Saturation Voltage Output Leakage Output Rise Time Output Fall Time Symbol Test Conditions VDD Operating IDD VDS(on) IOFF tr tf BBOP B
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