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37LV128-TISN

37LV128-TISN

  • 厂商:

    MICROCHIP

  • 封装:

  • 描述:

    37LV128-TISN - 36K, 64K, and 128K Serial EPROM Family - Microchip Technology

  • 数据手册
  • 价格&库存
37LV128-TISN 数据手册
37LV36/65/128 36K, 64K, and 128K Serial EPROM Family FEATURES • • • • • • • • • • • • • • • Operationally equivalent to Xilinx® XC1700 family Wide voltage range 3.0 V to 6.0 V Maximum read current 10 mA at 5.0 V Standby current 100 µA typical Industry standard Synchronous Serial Interface/ 1 bit per rising edge of clock Full Static Operation Sequential Read/Program Cascadable Output Enable 10 MHz Maximum Clock Rate @ 5.0 Vdc Programmable Polarity on Hardware Reset Programming with industry standard EPROM programmers Electrostatic discharge protection > 4,000 volts 8-pin PDIP/SOIC and 20-pin PLCC packages Data Retention > 200 years Temperature ranges: - Commercial: 0°C to +70°C - Industrial: -40°C to +85°C PACKAGE TYPES PDIP DATA CLK RESET/OE CE 1 8 VCC VPP CEO VSS 37LV36 37LV65 37LV128 2 3 4 7 6 5 SOIC DATA CLK RESET/OE CE 1 8 VCC VPP CEO VSS 37LV36 37LV65 37LV128 2 3 4 7 6 5 PLCC DATA VCC 3 2 1 20 12 19 18 17 VPP 16 15 14 CEO 13 DESCRIPTION The Microchip Technology Inc. 37LV36/65/128 is a family of Serial OTP EPROM devices organized internally in a x32 configuration. The family also features a cascadable option for increased memory storage where needed. The 37LV36/65/128 is suitable for many applications in which look-up table information storage is desirable and provides full static operation in the 3.0V to 6.0V VCC range. The devices also support the industry standard serial interface to the popular RAM-based Field Programmable Gate Arrays (FPGA). Advanced CMOS technology makes this an ideal bootstrap solution for today's high speed SRAM-based FPGAs. The 37LV36/65/128 family is available in the standard 8-pin plastic DIP, 8-pin SOIC and 20-pin PLCC packages. Device 37LV36 37LV65 37LV128 Bits 36,288 65,536 131,072 Programming Word 1134 x 32 2048 x 32 4096 x 32 CLK ADDRESS Counter CLK 4 5 37LV36 37LV65 37LV128 10 RESET/OE 6 7 CE 8 9 Vss BLOCK DIAGRAM CE CEO RESET/OE 11 EPROM ARRAY OE DATA Xilinx is a registered trademark of Xilinx Corporation. © 1996 Microchip Technology Inc. DS21109E-page 1 This document was created with FrameMaker 4 0 4 37LV36/65/128 1.0 1.1 ELECTRICAL CHARACTERISTICS Maximum Ratings* TABLE 1-1: Name DATA CLK PIN FUNCTION TABLE Function Data I/O Clock Input 8 1 2 3 4 5 6 7 8 20 2 4 6 8 10 14 17 20 VCC and input voltages w.r.t. VSS .......... -0.6V to +0.6V VPP voltage w.r.t. VSS during programming ...................................... -0.6V to +14.0V Output voltage w.r.t. VSS ............... -0.6V to VCC +0.6V Storage temperature .......................... -65˚C to +150˚C Ambient temp. with power applied ..... -65˚C to +125˚C Soldering temperature of leads (10 sec.) ......... +300°C ESD protection on all pins ..................................... ≥ 4 kV *Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. RESET/OE Reset Input and Output Enable CE VSS CEO VPP VCC Chip Enable Input Ground Chip Enable Output Programming Voltage Supply +3.0V to 6.0V Power Supply Not Labeled Not utilized, not connected TABLE 1-2: READ OPERATION DC CHARACTERISTICS VCC = +3.0 to 6.0V Commercial (C): Tamb = 0˚C to +70˚C Industrial (I): Tamb = -40˚C to +85˚C Parameter DATA, CE, CEO and Reset pins: High level input voltage Low level input voltage High level output voltage Low level output voltage Input Leakage Output Leakage Input Capacitance (all inputs/outputs) Operating Current Symbol VIH VIL VOH1 VOH2 VOL ILI ILO CINT ICC Read Min. 2.0 -0.3 3.86 2.4 — -10 -10 — — — — Max. VCC 0.8 Units V V V V µA µA pF mA mA µA µA Conditions .32 10 10 10 10 2 100 50 IOH = -4 mA VCC ≥ 4.5V IOH = -4 mA VCC ≥ 3.0V IOL = 4.0 mA VIN = .1V to VCC VOUT = .1V to VCC Tamb = 25°C; FCLK = 1 MHz (Note 1) VCC = 6.0V, CLK = 10 MHz VCC = 3.6V, CLK = 2.5 MHz Outputs open VCC = 6.0V, CE = 5.8V VCC = 3.6V, CE = 3.4V Standby Current ICCS Note 1: This parameter is initially characterized and not 100% tested. DS21109E-page 2 © 1996 Microchip Technology Inc. 37LV36/65/128 2.0 2.1 DATA Data I/O 8.0 CASCADING SERIAL EPROMS Three-state DATA output for reading and input during programming. Cascading Serial EPROMs provide additional memory for multiple FPGAs configured as a daisy-chain, or for future applications requiring larger configuration memories. When the last bit from the first Serial EPROM is read, the next clock signal to the Serial EPROM asserts its CEO output LOW and disables its DATA line. The second Serial EPROM recognizes the LOW level on its CE input and enables its DATA output. When configuration is complete, the address counters of all cascaded Serial EPROMs are reset if RESET goes LOW forcing the RESET/OE on each Serial EPROM to go HIGH. If the address counters are not to be reset upon completion, then the RESET/OE inputs can be tied to ground. Additional logic may be required if cascaded memories are so large that the rippled chip enable is not fast enough to activate successive Serial EPROMs. 3.0 3.1 CLK Clock Input Used to increment the internal address and bit counters for reading and programming. 4.0 4.1 RESET/OE Reset Input and Output Enable A LOW level on both the CE and RESET/OE inputs enables the data output driver. A HIGH level on RESET/OE resets both the address and bit counters. In the 37LVXXX, the logic polarity of this input is programmable as either RESET/OE or OE/RESET. This document describes the pin as RESET/OE although the opposite polarity is also possible. This option is defined and set at device program time. 9.0 STANDBY MODE 5.0 5.1 CE Chip Enable Input The 37LVXXX enters a low-power Standby Mode whenever CE is HIGH. In Standby Mode, the Serial EPROM consumes less than 100 µA of current. The output will remain in a high-impedance state regardless of the state of the OE input. CE is used for device selection. A LOW level on both CE and OE enables the data output driver. A HIGH level on CE disables both the address and bit counters and forces the device into a low power mode. 10.0 PROGRAMMING MODE 6.0 6.1 CEO Chip Enable Output Programming Mode is entered by holding VPP HIGH (+13 volts) for two clock edges and then holding VPP = VDD for one clock edge. Programming mode is exited by driving a LOW on both CE and OE and then removing power from the device. Figures 4 through 7 show the programming algorithm. This signal is asserted LOW on the clock cycle following the last bit read from the memory. It will stay LOW as long as CE and OE are both LOW. It will then follow CE until OE goes HIGH. Thereafter, CEO will stay HIGH until the entire EPROM is read again. This pin also used to sense the status of RESET polarity when Programming Mode is entered. 11.0 37LVXXX RESET POLARITY The 37LVXXX lets the user choose the reset polarity as either RESET/OE or OE/RESET. Any third-party commercial programmer should prompt the user for the desired reset polarity. The programming of the overflow word should be handled transparently by the EPROM programmer; it is mentioned here as supplemental information only. The polarity is programmed into the first overflow word location, maximum address+1. 00000000 in these locations makes the reset active LOW, FFFFFFFF in these locations makes the reset active HIGH. The default condition is RESET active HIGH. 7.0 7.1 VPP Programming Voltage Supply Used to enter programming mode (+13 volts) and to program the memory (+13 volts). Must be connected directly to Vcc for normal Read operation. No overshoot above +14 volts is permitted. © 1996 Microchip Technology Inc. DS21109E-page 3 37LV36/65/128 FIGURE 11-1: READ CHARACTERISTICS TIMING CE TSCE TSCED TSCE THCED THC THCE RESET/OE TLC THOE CLK TOE TCE TCAC TOH TDF DATA TOH TABLE 11-1: READ CHARACTERISTICS AC Testing Waveform: VIL = 0.2V; VIH = 3.0V AC Test Load: 50 pF VOL = VOL_MAX; VOH = VOH_MIN Limits 3.0V ≤ Vcc ≤ 6.0V Min. Max. 45 60 200 — 50 — — — — — — Limits 4.5V ≤ Vcc ≤ 6.0V Min. — — — 0 — 25 25 25 80 0 0 20 2.5 — Max. 45 50 60 — 50 — — — — — — — 10 ns ns ns ns ns ns ns ns ns ns ns ns MHz Note 1 Note 1 Notes 1, 2 Symbol Parameter Units Conditions TOE TCE TCAC TOH TDF TLC THC TSCE TSCED THCE THCED THOE CLK max OE to Data Delay CE to Data Delay CLK to Data Delay Data Hold from CE, OE or CLK CE or OE to Data Float Delay CLK Low Time CLK High Time CE Set up Time to CLK (to guarantee proper counting) CE setup time to CLK (to guarantee proper DATA read) CE Hold Time to CLK (to guarantee proper counting) CE hold time to CLK (to guarantee proper DATA read) OE High Time (Guarantees counters are Reset) Clock Frequency — — — 0 — 100 100 40 100 0 50 100 — Note 1: This parameter is periodically sampled and not 100% tested. 2: Float delays are measured with output pulled through 1kΩ to VLOAD = VCC/2. DS21109E-page 4 © 1996 Microchip Technology Inc. 37LV36/65/128 FIGURE 11-2: READ CHARACTERISTICS AT END OF ARRAY TIMING RESET/OE CE CLK T CDF DATA LAST BIT T OCK CEO TOCE T OCE TOOE FIRST BIT TABLE 11-2: READ CHARACTERISTICS AT END OF ARRAY AC Testing Waveform: VIL = 0.2V; VIH = 3.0V AC Test Load: 50 pF VOL = VOL_MAX; VOH = VOH_MIN Limits 3.0V ≤ Vcc ≤ Limits 4.5V ≤ Vcc ≤ 6.0V 6.0V Min. Max. 50 65 45 45 Min. — — — — Max. 50 40 40 40 ns ns ns ns Notes 1, 2 Symbol Parameter Units Conditions TCDF TOCK TOCE TOOE CLK to Data Float Delay CLK to CEO Delay CE to CEO Delay RESET/OE to CEO Delay — — — — Note 1: This parameter is periodically sampled and not 100% tested. 2: Float delays are measured with output pulled through 1kΩ to VLOAD = VCC/2. © 1996 Microchip Technology Inc. DS21109E-page 5 37LV36/65/128 TABLE 11-3: DIP/SOIC Pin 1 2 3 PIN ASSIGNMENTS IN THE PROGRAMMING MODE PLCC Pin 2 4 6 Name DATA CLK RESET/OE I/O I/O I I Description The rising edge of the clock shifts a data word in or out of the EPROM one bit at a time. Clock Input. Used to increment the internal address/word counter for reading and programming operation. The rising edge of CLK shifts a data word into the EPROM when CE and OE are HIGH; it shifts a data word out of the EPROM when CE is LOW and OE is HIGH. The address/ word counter is incremented on the rising edge of CLK while CE is held HIGH and OE is held LOW. Note 1: Any modified polarity of the RESET/OE pin is ignored in the programming mode. 4 8 CE I The rising edge of CLK shifts a data word into the EPROM when CE and OE are HIGH; it shifts a data word out of the EPROM when CE is LOW and OE is HIGH. The address/ word counter is incremented on the rising edge of CLK while CE is held HIGH and OE is held LOW. Ground pin. 5 6 10 14 VSS CEO O The polarity of the RESET/OE pin can be read by sensing the CEO pin. Note 1: The polarity of the RESET/OE pin is ignored while in the Programming Mode. In final verification, this pin must be monitored to go LOW one clock cycle after the last data bit has been read. 7 17 VPP Programming Voltage Supply. Programming Mode is entered by holding CE and OE HIGH and VPP at VPP1 for two rising clock edges and then lowering VPP to VPP2 for one more rising clock edge. A word is programmed by strobing the device with VPP for the duration TPGM. VPP must be tied to VCC for normal read operation. +5 V power supply input. 8 20 VCC DS21109E-page 6 © 1996 Microchip Technology Inc. 37LV36/65/128 TABLE 11-4: DC PROGRAMMING SPECIFICATIONS Ambient Temperature: Tamb = 25°C ±5°C Min. VCCP VIL VIH VOL VOH VPP1 VPP2 IPPP IL VCCL VCCH Supply voltage during programming Low-level input voltage High-level input voltage Low-level output voltage High-level output voltage Programming voltage* Programming Mode access voltage Supply current in Programming Mode Input or output leakage current First pass Low-level supply voltage for final verification Second pass High-level supply voltage for final verification 5.0 0.0 2.4 — 3.7 12.5 VCCP — -10 2.8 6.4 Limits Units Max. 6.0 0.5 VCC 0.4 — 13.5 VCCP+1 100 10 3.0 6.6 V V V V V V V mA µA V V Symbol Parameter * No overshoot is permitted on this signal. VPP must not be allowed to exceed 14 volts. TABLE 11-5: AC PROGRAMMING SPECIFICATIONS (SEE NOTE 2) Limits Symbol TRPP TFPP TPGM TSVC TSVCE TSVOE THVC TSDP THDP TLCE TSCC TSIC THIC THOV TPCAC TPOH TPCE Parameter Min. 10% to 90% Rise Time of VPP 90% to 10% Fall Time of VPP VPP Programming Pulse Width VPP Setup to CLK for Entering Programming Mode CE Setup to CLK for Entering Programming Mode OE Setup to CLK for Entering Programming Mode VPP Hold from CLK for Entering Programming Mode Data Setup to CLK for Programming Data Hold from CLK for Programming CE Low time to clear data latches CE Setup to CLK for Programming/Verifying OE Setup to CLK for Incrementing Address Counter OE Hold from CLK for Incrementing Address Counter OE Hold from VPP CLK to Data Valid Data Hold from CLK CE Low to Data Valid 0 250 1 1 .50 100 100 100 300 50 0 100 100 100 0 200 400 1.05 Max. Units µs µs ms ns ns ns ns ns ns ns ns ns ns ns ns ns ns Conditions Note 1 Note 1 Note 1 Note 1 Note 1 Note 1 Note 1 Note 1: This parameter is periodically sampled and not 100% tested. Note 2: While in Programming Mode, CE should only be changed while OE is HIGH and has been HIGH for 200 ns, and OE should only be changed while CE is HIGH and has been HIGH for 200 ns. © 1996 Microchip Technology Inc. DS21109E-page 7 37LV36/65/128 FIGURE 11-3: ENTER AND EXIT PROGRAMMING MODES Enter Mode VCC VPP VPP2 TRPP TSVC THVC CLK TSVC TFPP VCCP Exit Mode VPP2 VPP1 VPP VCCP VCC V SS 1 ms CE V SS V SS DATA TSVCE CE TSVOE RESET/OE RESET/OE V SS CLK VSS FIGURE 11-4: PROGRAMMING CYCLE OVERVIEW (NO VERIFY UNTIL ENTIRE ARRAY IS PROGRAMMED) VCC = VCCP VCC VPP1 VPP = VPP2 Enter 500 µs Programming Programming Mode Mode VPP 500 µs Programming Mode 500 µs Programming Mode 500 µs Programming Mode CLK 2 CLKS **Load Word 1 CE low to clear data latches **Load Word 2 **Load Word 3 **Load Word 4 **Load Word 5 Clock Increments Address Counter CE RESET/OE High if RESET/OE configured * CEO * * * * ** 32 Clocks *Note: The CEO pin is high impedance when VPP = VPP1 Low if RESET/OE configured FIGURE 11-5: DETAILS OF PROGRAM CYCLE Clear PROM Internal Data Latches Load PROM Internal Data Latches TRPP TFPP V PP TPGM CLK TSDP DATA CE TLCE RESET/OE *Note: The programmer must float the data pin while CE is low to avoid bus contention Program Pulse Increment Word Counter THDP 2 32 (Last Bit) THIC TSIC * TSCC 1 THOV DS21109E-page 8 © 1996 Microchip Technology Inc. 37LV36/65/128 FIGURE 11-6: READ MANUFACTURER AND DEVICE ID OVERVIEW VCC = VCCP VCC VPP1 VPP = VPP2 Enter Programming 37LV128 needs 4104 clocks Mode Clock past user memory array to ID location ( 37LV36/65 needs 2056 clocks) VPP CLK 7 Clocks To Read Manufacturer ID 8 Clocks To Read Device ID CE RESET/OE CEO High if RESET/OE configured Low if RESET/OE configured LSB first Data X floats Microchip ID 29 Hex Device ID 37LV128 = 72 Hex 37LV65 = 71 Hex 37LV36 = 70 Hex FIGURE 11-7: DETAILS OF READ MANUFACTURER AND DEVICE ID Microchip ID = 29 Hex Device ID Œ CLK DATA CE T PCAC LSB=1 TPCE 0  TPOH 0 Ž   ‘ ’ Œ  ••• 1 0 1 0 0 LSB ••• RESET/OE © 1996 Microchip Technology Inc. DS21109E-page 9 37LV36/65/128 FIGURE 11-8: 37LVXXX PROGRAMMING SPECIFICATIONS Start Check Device ID Device Power Off Device Power On Enter Programming Mode 1. 2. 3. VCC = VCCP VPP = VPP2 CE = OE = VIH VPP = VPP1 for 2 CLK Rising Edges VPP = VPP2 for 1 CLK Rising Edge 32 bit data word to be programmed = FFFFFFFFhex Yes No CE low to clear EPROM internal data latches Load 32-bit word to be programmed Increment Address Counter Pulse VPP to VPP1 (13V) for Tpgm (500 µs) No Last Word? Yes Exit Programming Mode Device Power Off Device Power On Yes 1st Pass? No Device Failure Fail Verify All Data Bits (Read Mode) VCC = VPP = VCCL and VCC = VPP = VCCH Pass Device Passed DS21109E-page 10 © 1996 Microchip Technology Inc. 37LV36/65/128 37LV36/65/128 Product Identification System To order or to obtain information, e.g., on pricing or delivery, please use the listed part numbers, and refer to the factory or the listed sales offices. 37LV36/65/128 – I T /P Package: P = Plastic DIP, 8 lead SN = Plastic SOIC (150 mil Body), 8 lead L = Plastic Leaded Chip Carrier (PLCC), 20 lead Blank = 0˚C to +70˚C I = -40˚C to +85˚C Blank = Tube T = Tape and Reel 37LV128 37LV65 37LV36 128K Serial EPROM 64K Serial EPROM 36K Serial EPROM Temperature Range: Shipping: Device: © 1996 Microchip Technology Inc. DS21109E-page 11 WORLDWIDE SALES & SERVICE AMERICAS Corporate Office Microchip Technology Inc. 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 602 786-7200 Fax: 602 786-7277 Technical Support: 602 786-7627 Web: http://www.microchip.com Atlanta Microchip Technology Inc. 500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770 640-0034 Fax: 770 640-0307 Boston Microchip Technology Inc. 5 Mount Royal Avenue Marlborough, MA 01752 Tel: 508 480-9990 Fax: 508 480-8575 Chicago Microchip Technology Inc. 333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 708 285-0071 Fax: 708 285-0075 Dallas Microchip Technology Inc. 14651 Dallas Parkway, Suite 816 Dallas, TX 75240-8809 Tel: 972 991-7177 Fax: 972 991-8588 Dayton Microchip Technology Inc. Suite 150 Two Prestige Place Miamisburg, OH 45342 Tel: 513 291-1654 Fax: 513 291-9175 Los Angeles Microchip Technology Inc. 18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 714 263-1888 Fax: 714 263-1338 New York Microchip Technmgy Inc. 150 Motor Parkway, Suite 416 Hauppauge, NY 11788 Tel: 516 273-5305 Fax: 516 273-5335 San Jose Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408 436-7950 Fax: 408 436-7955 Toronto Microchip Technology Inc. 5925 Airport Road, Suite 200 Mississauga, Ontario L4V 1W1, Canada Tel: 905 405-6279 Fax: 905 405-6253 ASIA/PACIFIC China Microchip Technology Unit 406 of Shanghai Golden Bridge Bldg. 2077 Yan’an Road West, Hongiao District Shanghai, Peoples Republic of China Tel: 86 21 6275 5700 Fax: 011 86 21 6275 5060 Hong Kong Microchip Technology RM 3801B, Tower Two Metroplaza 223 Hing Fong Road Kwai Fong, N.T. Hong Kong Tel: 852 2 401 1200 Fax: 852 2 401 3431 India Microchip Technology No. 6, Legacy, Convent Road Bangalore 560 025 India Tel: 91 80 526 3148 Fax: 91 80 559 9840 Korea Microchip Technology 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku, Seoul, Korea Tel: 82 2 554 7200 Fax: 82 2 558 5934 Singapore Microchip Technology 200 Middle Road #10-03 Prime Centre Singapore 188980 Tel: 65 334 8870 Fax: 65 334 8850 Taiwan, R.O.C Microchip Technology 10F-1C 207 Tung Hua North Road Taipei, Taiwan, ROC Tel: 886 2 717 7175 Fax: 886 2 545 0139 EUROPE United Kingdom Arizona Microchip Technology Ltd. Unit 6, The Courtyard Meadow Bank, Furlong Road Bourne End, Buckinghamshire SL8 5AJ Tel: 44 1628 850303 Fax: 44 1628 850178 France Arizona Microchip Technology SARL Zone Industrielle de la Bonde 2 Rue du Buisson aux Fraises 91300 Massy - France Tel: 33 1 69 53 63 20 Fax: 33 1 69 30 90 79 Germany Arizona Microchip Technology GmbH Gustav-Heinemann-Ring 125 D-81739 Muenchen, Germany Tel: 49 89 627 144 0 Fax: 49 89 627 144 44 Italy Arizona Microchip Technology SRL Centro Direzionale Colleone Pas Taurus 1 Viale Colleoni 1 20041 Agrate Brianza Milan Italy Tel: 39 39 6899939 Fax: 39 39 689 9883 JAPAN Microchip Technology Intl. Inc. Benex S-1 6F 3-18-20, Shin Yokohama Kohoku-Ku, Yokohama Kanagawa 222 Japan Tel: 81 45 471 6166 Fax: 81 45 471 6122 9/3/96 All rights reserved. © 1996, Microchip Technology Incorporated, USA. 9/96 Printed on recycled paper. Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. The Microchip logo and name are registered trademarks of Microchip Technology Inc. All rights reserved. All other trademarks mentioned herein are the property of their respective companies. DS21109E-page 12 © 1996 Microchip Technology Inc.
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