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93AA76-P

93AA76-P

  • 厂商:

    MICROCHIP

  • 封装:

  • 描述:

    93AA76-P - 8K/16K 1.8V Microwire Serial EEPROM - Microchip Technology

  • 详情介绍
  • 数据手册
  • 价格&库存
93AA76-P 数据手册
93AA76/86 8K/16K 1.8V Microwire® Serial EEPROM FEATURES • Single supply operation down to 1.8V • Low power CMOS technology - 1 mA active current typical - 5 µA standby current (typical) at 3.0V • ORG pin selectable memory configuration - 1024 x 8 or 512 x 16-bit organization (93AA76) - 2048 x 8 or 1024 x 16-bit organization (93AA86) • Self-timed ERASE and WRITE cycles • Automatic ERAL before WRAL • Power on/off data protection circuitry • Industry standard 3-wire serial I/O • Device status signal during ERASE/WRITE cycles • Sequential READ function • 10,000,000 ERASE/WRITE cycles guaranteed • Data retention > 200 years • 8-pin PDIP/SOIC package • Temperature ranges available: - Commercial (C): 0°C to +70°C PACKAGE TYPES DIP Package CS CLK DI DO 1 2 3 4 8 7 6 5 VCC PE ORG VSS 93AA76/86 SOIC Package 1 2 3 4 8 7 6 5 93AA76/86 CS CLK DI DO VCC PE ORG VSS BLOCK DIAGRAM VCC VSS DESCRIPTION The Microchip Technology Inc. 93AA76/86 are 8K and 16K low voltage serial Electrically Erasable PROMs. The device memory is configured as x8 or x16 bits depending on the ORG pin setup. Advanced CMOS technology makes these devices ideal for low power non-volatile memory applications. These devices also have a Program Enable (PE) pin to allow the user to write protect the entire contents of the memory array. The 93AA76/86 is available in standard 8-pin DIP and 8-pin surface mount SOIC packages. DI Memory Array Address Decoder Address Counter Data Register Output Buffer DO PE CS Mode Decode Logic CLK Clock Generator Microwire is a registered trademark of National Semiconductor Incorporated. © 1996 Microchip Technology Inc. Preliminary This document was created with FrameMaker 4 0 4 DS21130C-page 1 93AA76/86 1.0 ELECTRICAL CHARACTERISTICS 1.1 Maximum Ratings* TABLE 1-1: Name CS CLK DI DO VSS ORG PE VCC PIN FUNCTION TABLE Function Chip Select Serial Data Clock Serial Data Input Serial Data Output Ground Memory Configuration Program Enable Power Supply VCC ..................................................................................7.0V All inputs and outputs w.r.t. VSS ............... -0.6V to Vcc +1.0V Storage temperature ..................................... -65˚C to +150˚C Ambient temp. with power applied................. -65˚C to +125˚C Soldering temperature of leads (10 seconds) ............. +300˚C ESD protection on all pins................................................4 kV *Notice: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability 1.2 AC Test Conditions AC Waveform: VLO = 2.0V VHI = Vcc - 0.2V VHI = 4.0V for (Note 1) (Note 2) Timing Measurement Reference Level Input Output Note 1: For VCC ≤ 4.0V 2: For VCC > 4.0V 0.5 VCC 0.5 VCC TABLE 1-2: DC CHARACTERISTICS Applicable over recommended operating ranges shown below unless otherwise noted: VCC = +1.8V to +6.0V Commercial (C): Tamb = 0˚C to +70˚C Parameter High level input voltage Low level input voltage Low level output voltage High level output voltage Input leakage current Output leakage current Pin capacitance (all inputs/outputs) Operating current Symbol VIH1 VIH2 VIL1 VIL2 VOL1 VOL2 VOH1 VOH2 ILI ILO CINT ICC write ICC read Min. 2.0 0.7 VCC -0.3 -0.3 — — 2.4 VCC-0.2 -10 -10 — — — Max. +1 VCC +1 0.8 0.2 VCC 0.4 0.2 — — 10 10 7 VCC Units V V V V V V V V µA µA pF Conditions VCC ≥ 2.7V VCC < 2.7V VCC ≥ 2.7V VCC < 2.7V IOL = 2.1 mA; VCC = 4.5V IOL =100 µA; VCC = VCC Min. IOH = -400 µA; VCC = 4.5V IOH = -100 µA; VCC = VCC Min. VIN = 0.1V to VCC VOUT = 0.1V to VCC (Note Note:) Tamb = +25˚C, FCLK = 1 MHz VCC = 5.5V FCLK = 3 MHz; VCC = 5.5V FCLK = 1 MHz; VCC = 3.0V CLK = CS = 0V; VCC = 5.5V CLK = CS = 0V; VCC = 3.0V 3 mA 1 mA 500 µA µA Standby current ICCS — 100 30 µA Note: This parameter is periodically sampled and not 100% tested. DS21130C-page 2 Preliminary © 1996 Microchip Technology Inc. 93AA76/86 TABLE 1-3: AC CHARACTERISTICS Applicable over recommended operating ranges shown below unless otherwise noted: VCC = +1.8V to +6.0V Commercial (C): Tamb = 0˚C to +70˚C Parameter Clock frequency Symbol FCLK Min. — Max. 3 2 1 — Units MHz MHz Mhz ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms ms cycles Conditions 4.5V ≤ VCC ≤ 6.0V 2.5V ≤ VCC ≤ 4.5V 1.8V ≤ VCC < 2.5V 4.5V ≥ VCC ≤ 6.0V 2.5V ≤ VCC < 4.5V 1.8V ≤ VCC < 2.5V 4.5V ≤ VCC ≤ 6.0V 2.5V ≤ VCC < 4.5V 1.8V ≤ VCC < 2.5V 4.5V ≤ VCC ≤ 6.0V, Relative to CLK 2.5V ≤ VCC < 4.5V, Relative to CLK 1.8V ≤ VCC < 2.5V, Relative to CLK 1.8V ≤ VCC ≤ 6.0V 1.8V ≤ VCC ≤ 6.0V, Relative to CLK 4.5V ≤ VCC ≤ 6.0V, Relative to CLK 2.5V ≤ VCC
93AA76-P
物料型号:93AA76/86

器件简介: - 93AA76/86是Microchip Technology Inc.生产的低电压串行EEPROM,分别提供8K和16K的存储容量。

- 这些设备采用先进的CMOS技术,适用于低功耗非挥发性存储应用。

- 具备程序使能(PE)引脚,允许用户对整个存储器阵列进行写保护。

- 存储器配置取决于ORG引脚设置,可以是x8或x16位。


引脚分配: - CS(Chip Select):芯片选择引脚。

- CLK(Serial Data Clock):串行数据时钟引脚。

- DI(Serial Data Input):串行数据输入引脚。

- DO(Serial Data Output):串行数据输出引脚。

- Vss(Ground):地引脚。

- ORG(Memory Configuration):存储器配置引脚。

- PE(Program Enable):程序使能引脚。

- Vcc(Power Supply):电源引脚。


参数特性: - 工作电压:单电源操作低至1.8V。

- 活动电流典型值:1mA,待机电流典型值:5µA(3.0V时)。

- 自我计时的擦除和写入周期。

- 自动擦除前写入。

- 电源开关数据保护电路。

- 行业标准的3线串行I/O。

- 擦除/写入周期中设备状态信号。

- 顺序读取功能。

- 保证1000万次擦除/写入周期。


功能详解: - 93AA76/86 EEPROM允许通过串行接口进行数据的读写操作,具有不同的操作指令集,包括读、擦除、写入、擦除所有、写入所有等。

- 通过POL引脚选择存储器组织结构,x8或x16位。

- 具有数据保持功能,数据保留时间超过200年。


应用信息: - 适用于需要低功耗非挥发性存储的场合,如配置存储、校准数据存储等。


封装信息: - 8脚PDIP封装和8脚SOIC表面贴装封装。
93AA76-P 价格&库存

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