LPS3015

MCP16301 High Voltage Input Integrated Switch Step-Down Regulator Features • • • • • • • • • • • • • • • • • Up to 96% Typical Efficiency Input Voltage Range: 4.0V to 30V Output Voltage Range: 2.0V to 15V 2% Output Voltage Accuracy Integrated N-Channel Buck Switch: 460 mΩ 600 mA Output Current 500 kHz Fixed Frequency Adjustable Output Voltage Low Device Shutdown Current Peak Current Mode Control Internal Compensation Stable with Ceramic Capacitors Internal Soft-Start Cycle by Cycle Peak Current Limit Under Voltage Lockout (UVLO): 3.5V Overtemperature Protection Available Package: SOT-23-6 General Description The MCP16301 is a highly integrated, high-efficiency, fixed frequency, step-down DC-DC converter in a popular 6-pin SOT-23 package that operates from input voltage sources up to 30V. Integrated features include a high side switch, fixed frequency Peak Current Mode Control, internal compensation, peak current limit and overtemperature protection. Minimal external components are necessary to develop a complete step-down DC-DC converter power supply. High converter efficiency is achieved by integrating the current limited, low resistance, high-speed N-Channel MOSFET and associated drive circuitry. High switching frequency minimizes the size of external filtering components resulting in a small solution size. The MCP16301 can supply 600 mA of continuous current while regulating the output voltage from 2.0V to 15V. An integrated, high-performance peak current mode architecture keeps the output voltage tightly regulated, even during input voltage steps and output current transient conditions that are common in power systems. The EN input is used to turn the device on and off. While turned off, only a few micro amps of current are consumed from the input for power shedding and load distribution applications. Output voltage is set with an external resistor divider. The MCP16301 is offered in a space saving SOT-23-6 surface mount package. Applications PIC®/dsPIC Microcontroller Bias Supply 24V Industrial Input DC-DC Conversion Set-Top Boxes DSL Cable Modems Automotive Wall Cube Regulation SLA Battery Powered Devices AC-DC Digital Control Power Source Power Meters D2 Package Linear Regulator Replacement - See Figure 5-2 • Consumer • Medical and Health Care • Distributed Power Supplies • • • • • • • • • • Package Type MCP16301 6-Lead SOT-23 BOOST 1 6 SW 5 VIN 4 EN GND 2 VFB 3 © 2011 Microchip Technology Inc. DS25004A-page 1 MCP16301 Typical Applications 1N4148 CBOOST L1 100 nF 15 µH SW VIN CIN 10 µF EN VFB GND 10 KΩ 40V Schottky Diode VOUT 3.3V @ 600 mA COUT 2 X10 µF 31.2 KΩ VIN 4.5V To 30V BOOST 1N4148 CBOOST L1 100 nF 22 µH SW VIN CIN 10 µF EN VFB GND 10 KΩ 40V Schottky Diode VOUT 5.0V @ 600 mA COUT 2 X10 µF 52.3 KΩ VIN 6.0V To 30V BOOST 100 90 80 VOUT = 5.0V Efficiency (%) 70 60 50 40 30 20 10 0 10 VOUT = 3.3V VIN = 12V 100 1000 IOUT (mA) DS25004A-page 2 © 2011 Microchip Technology Inc. MCP16301 1.0 ELECTRICAL CHARACTERISTICS † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings † VIN, SW ............................................................... -0.5V to 40V BOOST – GND ................................................... -0.5V to 46V BOOST – SW Voltage........................................ -0.5V to 6.0V VFB Voltage ........................................................ -0.5V to 6.0V EN Voltage ............................................. -0.5V to (VIN + 0.3V) Output Short Circuit Current ................................. Continuous Power Dissipation ....................................... Internally Limited Storage Temperature ................................... -65°C to +150°C Ambient Temperature with Power Applied ..... -40°C to +85°C Operating Junction Temperature.................. -40°C to +125°C ESD Protection On All Pins: HBM ................................................................. 3 kV MM .................................................................200 V DC CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VIN = VEN = 12V, VBOOST - VSW = 3.3V, VOUT = 3.3V, IOUT = 100 mA, L = 15 µH, COUT = CIN = 2 X 10 µF X7R Ceramic Capacitors Boldface specifications apply over the TA range of -40oC to +85oC. Parameters Input Voltage Feedback Voltage Output Voltage Adjust Range Feedback Voltage Line Regulation Feedback Input Bias Current Undervoltage Lockout Start Undervoltage Lockout Stop Undervoltage Lockout Hysteresis Switching Frequency Maximum Duty Cycle Minimum Duty Cycle NMOS Switch On Resistance NMOS Switch Current Limit Quiescent Current Quiescent Current - Shutdown Maximum Output Current EN Input Logic High EN Input Logic Low EN Input Leakage Current Soft-Start Time Note 1: 2: 3: Sym VIN VFB VOUT (ΔVFB/VFB)/ΔVIN IFB UVLOSTRT UVLOSTOP UVLOHYS fSW DCMAX DCMIN RDS(ON) IN(MAX) IQ IQ IOUT VIH VIL IENLK tSS Min — 0.784 2.0 — -250 — 2.4 — 425 90 — — — — — 600 1.4 — — — Typ 4.0 0.800 — 0.01 ±10 3.5 3.0 0.4 500 95 1 0.46 1.3 2 7 — — — 0.05 150 Max 30 0.816 15.0 0.1 +250 4.0 — — 550 — — — — 7.5 10 — — 0.4 1.0 — Units V V V %/V nA V V V kHz % % Ω A mA µA mA V V µA µS Conditions Note 1 Note 2 VIN = 12V to 30V; VIN Rising VIN Falling IOUT = 200 mA VIN = 5V; VFB = 0.7V; IOUT = 100 mA VBOOST - VSW = 3.3V VBOOST - VSW = 3.3V VBOOST= 3.3V; Note 3 VOUT = EN = 0V Note 1 VEN = 12V EN Low to High, 90% of VOUT The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage necessary for regulation. See characterization graphs for typical input to output operating voltage range. For VIN < VOUT, VOUT will not remain in regulation. VBOOST supply is derived from VOUT. © 2011 Microchip Technology Inc. DS25004A-page 3 MCP16301 DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VIN = VEN = 12V, VBOOST - VSW = 3.3V, VOUT = 3.3V, IOUT = 100 mA, L = 15 µH, COUT = CIN = 2 X 10 µF X7R Ceramic Capacitors Boldface specifications apply over the TA range of -40oC to +85oC. Parameters Thermal Shutdown Die Temperature Die Temperature Hysteresis Note 1: 2: 3: Sym TSD TSDHYS Min — — Typ 150 30 Max — — Units °C °C Conditions The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage necessary for regulation. See characterization graphs for typical input to output operating voltage range. For VIN < VOUT, VOUT will not remain in regulation. VBOOST supply is derived from VOUT. TEMPERATURE SPECIFICATIONS Electrical Specifications: Parameters Temperature Ranges Operating Junction Temperature Range Storage Temperature Range Maximum Junction Temperature Package Thermal Resistances Thermal Resistance, 6L-SOT-23 θJA — 190.5 — °C/W EIA/JESD51-3 Standard TJ TA TJ -40 -65 — — — — +125 +150 +150 °C °C °C Transient Steady State Sym Min Typ Max Units Conditions DS25004A-page 4 © 2011 Microchip Technology Inc. MCP16301 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 200 mA, TA = +25°C. 90 80 Efficiency (%) Efficiency (%) VIN = 6V 100 90 80 70 60 50 40 30 VIN = 16V VIN = 30V 70 60 50 40 30 0 VIN = 12V VIN = 24V VOUT = 12.0V VIN = 30V VOUT = 2.0V 100 200 300 IOUT(mA) 400 500 600 0 100 200 300 IOUT (mA) 400 500 600 FIGURE 2-1: IOUT. 100 90 Efficiency (%) 80 70 60 50 40 30 0 100 VIN = 6V 2.0V VOUT Efficiency vs. FIGURE 2-4: IOUT. 100 90 Efficiency (%) 80 70 60 50 40 30 12V VOUT Efficiency vs. VIN = 16V VIN = 30V VIN = 24V VIN = 12V VIN = 30V VOUT = 3.3V VOUT = 15.0V 200 300 IOUT (mA) 400 500 600 0 100 200 300 IOUT (mA) 400 500 600 FIGURE 2-2: IOUT. 100 90 Efficiency (%) 80 70 60 50 40 30 0 100 V IN = 12V VIN = 6V 3.3V VOUT Efficiency vs. FIGURE 2-5: IOUT. 6 5 4 IQ (mA) VIN = 6V 15V VOUT Efficiency vs. VOUT = 3.3V IOUT = 0 mA VIN = 12V VIN = 30V V IN = 30V VOUT = 5.0V 3 2 1 0 200 300 IOUT (mA) 400 500 600 -40 -25 -10 5 20 35 50 65 80 Ambient Temperature (°C) FIGURE 2-3: IOUT. 5.0V VOUT Efficiency vs. FIGURE 2-6: Temperature. Input Quiescent Current vs. © 2011 Microchip Technology Inc. DS25004A-page 5 MCP16301 Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 200 mA, TA = +25°C. 505 500 495 490 485 480 475 470 465 460 -40 -25 -10 5 20 35 50 65 80 Ambient Temperature (°C) 510 500 490 RDSON (mΩ) 480 470 460 450 440 430 420 3 3.5 4 Boost Voltage (V) 4.5 5 Switching Frequency (kHz) VIN = 12V VOUT = 3.3V IOUT = 200 mA TA = +25°C VDS = 100 mV FIGURE 2-7: Switching Frequency vs. Temperature; VOUT = 3.3V. 95.85 Maximum Duty Cycle (%) 95.8 95.75 95.7 95.65 95.6 95.55 95.5 95.45 -40 -25 -10 5 20 35 50 65 80 Ambient Temperature (°C) VIN = 5V IOUT = 200 mA FIGURE 2-10: Switch RDSON vs. VBOOST. 0.802 0.801 VFB Voltage (V) 0.800 0.799 0.798 0.797 0.796 -40 -25 VIN = 12V VOUT = 3.3V IOUT = 100 mA -10 5 20 35 50 65 80 Ambient Temperature (°C) FIGURE 2-8: Maximum Duty Cycle vs. Ambient Temperature; VOUT = 5.0V. 1600 Peak Current Limit (mA) 1400 1200 1000 VOUT = 3.3V FIGURE 2-11: VOUT = 3.3V. 3.60 3.55 3.50 3.45 3.40 3.35 3.30 3.25 3.20 3.15 3.10 -40 -25 VFB vs. Temperature; VIN = 30V VIN = 12V VIN = 6V UVLO Start 800 600 -40 -25 -10 5 20 35 50 65 80 Ambient Temperature (°C) Voltage (V) UVLO Stop -10 5 20 35 50 65 80 Ambient Temperature (°C) FIGURE 2-9: Peak Current Limit vs. Temperature; VOUT = 3.3V. FIGURE 2-12: Temperature. Under Voltage Lockout vs. DS25004A-page 6 © 2011 Microchip Technology Inc. MCP16301 Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 200 mA, TA = +25°C. Enable Threshold Voltage (V) 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 -40 -25 -10 5 20 35 50 65 80 Ambient Temperature (°C) 5.00 Minimum Input Voltage (V) 4.70 4.40 4.10 3.80 3.50 3.20 1 10 IOUT (mA) 100 1000 To Run To Start VIN = 12V VOUT = 3.3V IOUT = 100 mA FIGURE 2-13: Temperature. EN Threshold Voltage vs. FIGURE 2-16: Typical Minimum Input Voltage vs. Output Current. VOUT = 3.3V IOUT = 100 mA VIN = 12V VOUT 20 mV/DIV AC coupled VSW 5V/DIV VOUT = 3.3V IOUT = 50 mA VIN = 12V VOUT 2V/DIV VEN 2V/DIV IL 100 mA/DIV 1 µs/DIV 100 µs/DIV µs/ FIGURE 2-14: Waveforms. Light Load Switching FIGURE 2-17: Startup From Enable. VOUT = 20 mV/DIV AC coupled VSW = 5V/DIV VOUT = 3.3V IOUT = 600 mA VIN = 12V VOUT = 3.3V IOUT = 100 mA VIN = 12V VOUT 1V/DIV IL = 20 mA/DIV VIN 5V/DIV 1 µs/DIV 100 µs/DIV FIGURE 2-15: Waveforms. Heavy Load Switching FIGURE 2-18: Startup From VIN. © 2011 Microchip Technology Inc. DS25004A-page 7 MCP16301 Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 200 mA, TA = +25°C. VOUT = 3.3V IOUT = 100 mA to 600 mA VIN = 12V VOUT AC coupled 100 mV/DIV IOUT 200 mA/DIV 100 µs/DIV FIGURE 2-19: Load Transient Response. VOUT = 3.3V IOUT = 100 mA VIN = 8V to 12V Step VOUT AC coupled 100 mV/DIV VIN 1V/DIV 10 µs/DIV FIGURE 2-20: Line Transient Response. DS25004A-page 8 © 2011 Microchip Technology Inc. MCP16301 3.0 PIN DESCRIPTIONS PIN FUNCTION TABLE Symbol BOOST GND VFB EN VIN SW Description Boost voltage that drives the internal NMOS control switch. A bootstrap capacitor is connected between the BOOST and SW pins. Ground Pin Output voltage feedback pin. Connect VFB to an external resistor divider to set the output voltage. Enable pin. Logic high enables the operation. Do not allow this pin to float. Input supply voltage pin for power and internal biasing. Output switch node, connects to the inductor, freewheeling diode and the bootstrap capacitor. The descriptions of the pins are listed in Table 3-1. TABLE 3-1: MCP16301 SOT-23 1 2 3 4 5 6 3.1 Boost Pin (BOOST) 3.5 The high side of the floating supply used to turn the integrated N-Channel MOSFET on and off is connected to the boost pin. Power Supply Input Voltage Pin (VIN) 3.2 Ground Pin (GND) The ground or return pin is used for circuit ground connection. The length of the trace from the input cap return, output cap return and GND pin should be made as short as possible to minimize the noise on the GND pin. Connect the input voltage source to VIN. The input source should be decoupled to GND with a 4.7 µF - 20 µF capacitor, depending on the impedance of the source and output current. The input capacitor provides AC current for the power switch and a stable voltage source for the internal device power. This capacitor should be connected as close as possible to the VIN and GND pins. For lighter load applications, a 1 µF X7R or X5R ceramic capacitor can be used. 3.6 Switch Pin (SW) 3.3 Feedback Voltage Pin (VFB) The VFB pin is used to provide output voltage regulation by using a resistor divider. The VFB voltage will be 0.800V typical with the output voltage in regulation. 3.4 Enable Pin (EN) The switch node pin is connected internally to the N-channel switch, and externally to the SW node consisting of the inductor and Schottky diode. The SW node can rise very fast as a result of the internal switch turning on. The external Schottky diode should be connected close to the SW node and GND. The EN pin is a logic-level input used to enable or disable the device switching, and lower the quiescent current while disabled. A logic high (> 1.4V) will enable the regulator output. A logic low ( VOUT. The integrated high-side switch is used to chop or modulate the input voltage using a controlled duty cycle for output voltage regulation. High efficiency is achieved by using a low resistance switch, low forward drop diode, low equivalent series resistance (ESR), inductor and capacitor. When the switch is turned on, a DC voltage is applied to the inductor (VIN - VOUT), resulting in a positive linear ramp of inductor current. When the switch turns off, the applied inductor voltage is equal to -VOUT, resulting in a negative linear ramp of inductor current (ignoring the forward drop of the Schottky diode). For steady-state, continuous inductor current operation, the positive inductor current ramp must equal the negative current ramp in magnitude. While operating in steady state, the switch duty cycle must be equal to the relationship of VOUT/VIN for constant output voltage regulation, under the condition that the inductor current is continuous, or never reaches zero. For discontinuous inductor current operation, the steady-state duty cycle will be less than VOUT/VIN to maintain voltage regulation. The average of the IL 0 IOUT VIN SW on on on off off Continuous Inductor Current Mode VOUT IL 0 SW on IOUT VIN on off off on Discontinuous Inductor Current Mode FIGURE 4-2: Step-Down Converter. DS25004A-page 12 © 2011 Microchip Technology Inc. MCP16301 4.2.2 PEAK CURRENT MODE CONTROL 4.2.4 HIGH SIDE DRIVE The MCP16301 integrates a Peak Current Mode Control architecture, resulting in superior AC regulation while minimizing the number of voltage loop compensation components, and their size, for integration. Peak Current Mode Control takes a small portion of the inductor current, replicates it and compares this replicated current sense signal with the output of the integrated error voltage. In practice, the inductor current and the internal switch current are equal during the switch-on time. By adding this peak current sense to the system control, the step-down power train system is reduced from a 2nd order to a 1st order. This reduces the system complexity and increases its dynamic performance. For Pulse-Width Modulation (PWM) duty cycles that exceed 50%, the control system can become bimodal where a wide pulse followed by a short pulse repeats instead of the desired fixed pulse width. To prevent this mode of operation, an internal compensating ramp is summed into the current shown in Figure 4-1. The MCP16301 features an integrated high-side N-Channel MOSFET for high efficiency step-down power conversion. An N-Channel MOSFET is used for its low resistance and size (instead of a P-Channel MOSFET). The N-Channel MOSFET gate must be driven above its source to fully turn on the transistor. A gate-drive voltage above the input is necessary to turn on the high side N-Channel. The high side drive voltage should be between 3.0V and 5.5V. The N-Channel source is connected to the inductor and Schottky diode, or switch node. When the switch is off, the inductor current flows through the Schottky diode, providing a path to recharge the boost cap from the boost voltage source, typically the output voltage for 3.0V to 5.0V output applications. A boost-blocking diode is used to prevent current flow from the boost cap back into the output during the internal switch-on time. Prior to startup, the boost cap has no stored charge to drive the switch. An internal regulator is used to “pre-charge” the boost cap. Once pre-charged, the switch is turned on and the inductor current flows. When the switch turns off, the inductor current free-wheels through the Schottky diode, providing a path to recharge the boost cap. Worst case conditions for recharge occur when the switch turns on for a very short duty cycle at light load, limiting the inductor current ramp. In this case, there is a small amount of time for the boost capacitor to recharge. For high input voltages there is enough pre-charge current to replace the boost cap charge. For input voltages above 5.5V typical, the MCP16301 device will regulate the output voltage with no load. After starting, the MCP16301 will regulate the output voltage until the input voltage decreases below 4V. See Figure 2-16 for device range of operation over input voltage, output voltage and load. 4.2.3 PULSE-WIDTH MODULATION (PWM) The internal oscillator periodically starts the switching period, which in MCP16301’s case occurs every 2 µs or 500 kHz. With the integrated switch turned on, the inductor current ramps up until the sum of the current sense and slope compensation ramp exceeds the integrated error amplifier output. The error amplifier output slews up or down to increase or decrease the inductor peak current feeding into the output LC filter. If the regulated output voltage is lower than its target, the inverting error amplifier output rises. This results in an increase in the inductor current to correct for errors in the output voltage. The fixed frequency duty cycle is terminated when the sensed inductor peak current, summed with the internal slope compensation, exceeds the output voltage of the error amplifier. The PWM latch is set by turning off the internal switch and preventing it from turning on until the beginning of the next cycle. An overtemperature signal, or boost cap undervoltage, can also reset the PWM latch to asynchronously terminate the cycle. 4.2.5 ALTERNATIVE BOOST BIAS For 3.0V to 5.0V output voltage applications, the boost supply is typically the output voltage. For applications with 3.0V < VOUT < 5.0V, an alternative boost supply can be used. Alternative boost supplies can be from the input, input derived, output derived or an auxiliary system voltage. For low voltage output applications with unregulated input voltage, a shunt regulator derived from the input can be used to derive the boost supply. For applications with high output voltage or regulated high input voltage, a series regulator can be used to derive the boost supply. © 2011 Microchip Technology Inc. DS25004A-page 13 MCP16301 Boost Diode C1 VZ = 5.1V BOOST RSH VIN 12V CIN FB GND RBOT VIN FW Diode CB EN MCP16301 SW COUT RTOP L VOUT 2V 3.0V to 5.5V External Supply Boost Diode BOOST CB EN VIN 12V CIN FB GND RBOT VIN FW Diode MCP16301 SW COUT RTOP L VOUT 2V FIGURE 4-3: Shunt and External Boost Supply. IBOOST_TYP for 3.3V Boost Supply = 0.6 mA IBOOST_TYP for 5.0V Boost Supply = 0.8 mA. Shunt Boost Supply Regulation is used for low output voltage converters operating from a wide ranging input source. A regulated 3.0V to 5.5V supply is needed to provide high side-drive bias. The shunt uses a Zener diode to clamp the voltage within the 3.0V to 5.5V range using the resistance shown in Figure 4-3. To calculate the shunt resistance, the boost drive current can be estimated using Equation 4-1. EQUATION 4-1: BOOST CURRENT I BOOST = I BOOST_TYP × 1.5 mA DS25004A-page 14 © 2011 Microchip Technology Inc. MCP16301 To calculate the shunt resistance, the maximum IBOOST and IZ current are used at the minimum input voltage (Equation 4-2). VZ and IZ can be found on the Zener diode manufacturer’s data sheet. Typical IZ = 1 mA. EQUATION 4-2: SHUNT RESISTANCE V INMIN – V Z R SH = ----------------------------I Boost + I Z Boost Diode VZ = 7.5V BOOST CB EN VIN 15V to 30V CIN FB GND RBOT VIN FW Diode MCP16301 SW COUT RTOP L VOUT 12V Boost Diode BOOST VZ = 7.5V EN VIN 12V CIN FB GND RBOT VIN FW Diode MCP16301 SW COUT RTOP CB L VOUT 2V FIGURE 4-4: Series Regulator Boost Supply. Series regulator applications use a Zener diode to drop the excess voltage. The series regulator bias source can be input or output voltage derived, as shown in Figure 4-4. The boost supply must remain between 3.0V and 5.5V at all times for proper circuit operation. © 2011 Microchip Technology Inc. DS25004A-page 15 MCP16301 NOTES: DS25004A-page 16 © 2011 Microchip Technology Inc. MCP16301 5.0 5.1 APPLICATION INFORMATION Typical Applications 5.3 General Design Equations The MCP16301 step-down converter operates over a wide input voltage range, up to 30V maximum. Typical applications include generating a bias or VDD voltage for the PIC® microcontrollers product line, digital control system bias supply for AC-DC converters, 24V industrial input and similar applications. 5.2 Adjustable Output Voltage Calculations The step down converter duty cycle can be estimated using Equation 5-2, while operating in Continuous Inductor Current Mode. This equation also counts the forward drop of the freewheeling diode and internal N-Channel MOSFET switch voltage drop. As the load current increases, the switch voltage drop and diode voltage drop increase, requiring a larger PWM duty cycle to maintain the output voltage regulation. Switch voltage drop is estimated by multiplying the switch current times the switch resistance or RDSON. EQUATION 5-2: To calculate the resistor divider values for the MCP16301, Equation 5-1 can be used. RTOP is connected to VOUT, RBOT is connected to GND and both are connected to the VFB input pin. CONTINUOUS INDUCTOR CURRENT DUTY CYCLE ( V OUT + V Diode ) D = -----------------------------------------------------( V IN – ( I SW × R DSON ) ) The MCP16301 device features an integrated slope compensation to prevent the bimodal operation of the PWM duty cycle. Internally, half of the inductor current down slope is summed with the internal current sense signal. For the proper amount of slope compensation, it is recommended to keep the inductor down-slope current constant by varying the inductance with VOUT, where K = 0.22V/µH. EQUATION 5-1: R TOP EXAMPLE 5-1: VOUT VFB RBOT RTOP VOUT = = = = = V OUT = R BOT × ⎛ ------------ – 1⎞ ⎝ V FB ⎠ 3.3V 0.8V 10 kΩ 31.25 kΩ (Standard Value = 31.2 kΩ) 3.3V EQUATION 5-3: K = V OUT ⁄ L For VOUT = 3.3V, recommended. an inductance of 15 µH is EXAMPLE 5-2: VOUT VFB RBOT RTOP VOUT = = = = = 5.0V 0.8V 10 kΩ 52.5 kΩ (Standard Value = 52.3 kΩ) 4.98V TABLE 5-1: VOUT 2.0V 3.3V 5.0V 12V 15V RECOMMENDED INDUCTOR VALUES K 0.20 0.22 0.23 0.21 0.22 LSTANDARD 10 µH 15 µH 22 µH 56 µH 68 µH The transconductance error amplifier gain is controlled by its internal impedance. The external divider resistors have no effect on system gain, so a wide range of values can be used. A 10 kΩ resistor is recommended as a good trade-off for quiescent current and noise immunity. © 2011 Microchip Technology Inc. DS25004A-page 17 MCP16301 5.4 Input Capacitor Selection 5.6 Inductor Selection The step-down converter input capacitor must filter the high input ripple current, as a result of pulsing or chopping the input voltage. The MCP16301 input voltage pin is used to supply voltage for the power train and as a source for internal bias. A low equivalent series resistance (ESR), preferably a ceramic capacitor, is recommended. The necessary capacitance is dependent upon the maximum load current and source impedance. Three capacitor parameters to keep in mind are the voltage rating, equivalent series resistance and the temperature rating. For wide temperature range applications, a multi-layer X7R dielectric is recommended, while for applications with limited temperature range, a multilayer X5R dielectric is acceptable. Typically, input capacitance between 4.7 µF and 10 µF is sufficient for most applications. For applications with 100 mA to 200 mA load, a 1 µF X7R capacitor can be used, depending on the input source and its impedance. The input capacitor voltage rating should be a minimum of VIN plus margin. Table 5-2 contains the recommended range for the input capacitor value. The MCP16301 is designed to be used with small surface mount inductors. Several specifications should be considered prior to selecting an inductor. To optimize system performance, the inductance value is determined by the output voltage (Table 5-1) so the inductor ripple current is somewhat constant over the output voltage range. EQUATION 5-4: INDUCTOR RIPPLE CURRENT L Δ IL = ----- × t ON - V L EXAMPLE 5-3: VIN = 12V VOUT = 3.3V IOUT = 600 mA EQUATION 5-5: 5.5 Output Capacitor Selection INDUCTOR PEAK CURRENT The output capacitor helps in providing a stable output voltage during sudden load transients, and reduces the output voltage ripple. As with the input capacitor, X5R and X7R ceramic capacitors are well suited for this application. The MCP16301 is internally compensated, so the output capacitance range is limited. See Table 5-2 for the recommended output capacitor range. The amount and type of output capacitance and equivalent series resistance will have a significant effect on the output ripple voltage and system stability. The range of the output capacitance is limited due to the integrated compensation of the MCP16301. The output voltage capacitor voltage rating should be a minimum of VOUT, plus margin. Table 5-2 contains the recommended range for the input and output capacitor value: Δ IL I LPK = ------- + I OUT 2 Inductor ripple current = 319 mA Inductor peak current = 760 mA An inductor saturation rating minimum of 760 mA is recommended. Low ESR inductors result in higher system efficiency. A trade-off between size, cost and efficiency is made to achieve the desired results. TABLE 5-2: Parameter CIN COUT CAPACITOR VALUE RANGE Min 2.2 µF 20 µF Max none none DS25004A-page 18 © 2011 Microchip Technology Inc. MCP16301 TABLE 5-3: MCP16301 RECOMMENDED 3.3V INDUCTORS DCR (Ω) Size WxLxH (mm) 3.2x2.521.0 4.3x4.3x1.4 6.0x6.0x3.5 6.1x6.1x3.2 7.3x7.3x4.1 2.8x3.2x2.0 2.0x2.0x0.6 3.0x3.0x1.4 2.8x2.8x1.1 ISAT (A) Value (µH) 5.7 Freewheeling Diode Part Number Coilcraft® ME3220 LPS4414 LPS6235 MSS6132 MSS7341 ME3220 XFL2006 LPS3015 Wurth 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 0.52 0.440 0.125 0.135 0.057 0.520 2.02 0.700 0.750 0.600 0.90 0.92 2.00 1.56 1.78 0.8 0.25 0.61 0.35 The freewheeling diode creates a path for inductor current flow after the internal switch is turned off. The average diode current is dependent upon output load current at duty cycle (D). The efficiency of the converter is a function of the forward drop and speed of the freewheeling diode. A low forward drop Schottky diode is recommended. The current rating and voltage rating of the diode is application dependent. The diode voltage rating should be a minimum of VIN, plus margin. For example, a diode rating of 40V should be used for an application with a maximum input of 30V. The average diode current can be calculated using Equation 5-6. EQUATION 5-6: DIODE AVERAGE CURRENT Elektronik® 0.42 2.8x2.8x1.35 I D1AVG = ( 1 – D ) × I OUT EXAMPLE 5-4: IOUT VIN VOUT D ID1AVG = 0.5A = 15V = 5V = 5/15 = 333 mA 744028 744029 744025 744031 744042 Coiltronics® SD12 SD18 SD20 SD3118 SD52 Sumida® CDPH4D19F CDRH2D09C CDRH2D162D CDRH3D161H TDK - EPC® VLF3012A VLF30251 VLF4012A VLF5014A B82462G4332M 0.400 0.900 2.8x2.8x2.8 0.255 0.450 3.8x3.8x1.65 0.175 0.48 0.75 4.8x4.8x1.8 0.692 5.2x5.2x1.2 0.266 0.831 5.2x5.2x1.8 0.193 0.718 5.2x5.2x2.0 0.51 0.189 0.075 0.52 0.198 0.328 0.54 0.5 0.46 0.28 0.097 0.75 0.88 0.66 0.24 0.35 0.65 0.41 0.47 0.63 0.97 1.05 3.2x3.2x1.8 5.2x5.5.2.0 5.2x5.2x2.0 3.2x3.2x1.0 3.2x3.2x1.8 4.0x4.0x1.8 2.8x2.6x1.2 2.5x3.0x1.2 3.5x3.7x1.2 4.5x4.7x1.4 6x6x2.2 12 VIN 600 mA 24 VIN 100 mA 18 VIN 600 mA A 0.5A to 1A diode is recommended. TABLE 5-4: App FREEWHEELING DIODES Part Number DFLS120L-7 B0540Ws-7 B130L-13-F Rating 20V, 1A 40V, 0.5A 30V, 1A Manufacturer Diodes Inc. Diodes Inc. Diodes Inc. 5.8 Boost Diode The boost diode is used to provide a charging path from the low voltage gate drive source, while the switch node is low. The boost diode blocks the high voltage of the switch node from feeding back into the output voltage when the switch is turned on, forcing the switch node high. A standard 1N4148 ultra-fast diode is recommended for its recovery speed, high voltage blocking capability, availability and cost. The voltage rating required for the boost diode is VIN. For low boost voltage applications, a small Schottky diode with the appropriately rated voltage can be used to lower the forward drop, increasing the boost supply for gate drive. © 2011 Microchip Technology Inc. DS25004A-page 19 MCP16301 5.9 Boost Capacitor EXAMPLE 5-5: VIN VOUT IOUT Efficiency Total System Dissipation LESR PL Diode VF D PDiode = 10V = 5.0V = 0.4A = 90% = 222 mW = 0.15Ω = 24 mW = 0.50 = 50% = 125 mW The boost capacitor is used to supply current for the internal high side drive circuitry that is above the input voltage. The boost capacitor must store enough energy to completely drive the high side switch on and off. A 0.1 µF X5R or X7R capacitor is recommended for all applications. The boost capacitor maximum voltage is 5.5V, so a 6.3V or 10V rated capacitor is recommended. 5.10 Thermal Calculations The MCP16301 is available in a SOT-23-6 package. By calculating the power dissipation and applying the package thermal resistance (θJA), the junction temperature is estimated. The maximum continuous junction temperature rating for the MCP16301 is +125°C. To quickly estimate the internal power dissipation for the switching step-down regulator, an empirical calculation using measured efficiency can be used. Given the measured efficiency, the internal power dissipation is estimated by Equation 5-7. This power dissipation includes all internal and external component losses. For a quick internal estimate, subtract the estimated Schottky diode loss and inductor ESR loss from the PDIS calculation in Equation 5-7. MCP16301 internal power dissipation estimate: PDIS - PL - PDIODE = 73 mW θJA Estimated Junction Temperature Rise = 198°C/W = +14.5°C 5.11 PCB Layout Information EQUATION 5-7: TOTAL POWER DISSIPATION ESTIMATE ⎛ V OUT × I OUT⎞ – ( V -----------------------------OUT × I OUT ) = P Dis ⎝ Efficiency ⎠ The difference between the first term, input power, and the second term, power delivered, is the total system power dissipation. The freewheeling Schottky diode losses are determined by calculating the average diode current and multiplying by the diode forward drop. The inductor losses are estimated by PL = IOUT2 x LESR. Good printed circuit board layout techniques are important to any switching circuitry, and switching power supplies are no different. When wiring the switching high-current paths, short and wide traces should be used. Therefore, it is important that the input and output capacitors be placed as close as possible to the MCP16301 to minimize the loop area. The feedback resistors and feedback signal should be routed away from the switching node and the switching current loop. When possible, ground planes and traces should be used to help shield the feedback signal and minimize noise and magnetic interference. A good MCP16301 layout starts with CIN placement. CIN supplies current to the input of the circuit when the switch is turned on. In addition to supplying highfrequency switch current, CIN also provides a stable voltage source for the internal MCP16301 circuitry. Unstable PWM operation can result if there are excessive transients or ringing on the VIN pin of the MCP16301 device. In Figure 5-1, CIN is placed close to pin 5. A ground plane on the bottom of the board provides a low resistive and inductive path for the return current. The next priority in placement is the freewheeling current loop formed by D1, COUT and L, while strategically placing COUT return close to CIN return. Next, CB and DB should be placed between the boost pin and the switch node pin SW. This leaves space close to the MCP16301 VFB pin to place RTOP and RBOT. RTOP and RBOT are routed away from the Switch node so noise is not coupled into the highimpedance VFB input. EQUATION 5-8: DIODE POWER DISSIPATION ESTIMATE P Diode = V F × ( ( 1 – D ) × I OUT ) DS25004A-page 20 © 2011 Microchip Technology Inc. MCP16301 Bottom Plane is GND MCP16301 RBOT RTOP 10 Ohm EN C 1 B DB VIN REN Bottom Trace VOUT D1 2 x CIN GND COUT COUT GND L DB 4 REN VIN 4V to 30V CIN FB GND 2 Component CIN COUT L RTOP RBOT D1 DB CB Value 10 µF 2 x 10 µF 15 µH 31.2 kΩ 10 kΩ B140 1N4148 100 nF *Note: 10 Ohm resistor is used with network analyzer, to measure system gain and phase. 3 5 MCP16301 VIN D1 RTOP SW 6 COUT 10 Ohm EN BOOST 1 CB L VOUT 3.3V RBOT FIGURE 5-1: MCP16301 SOT-23-6 Recommended Layout, 600 mA Design. © 2011 Microchip Technology Inc. DS25004A-page 21 MCP16301 Bottom Plane is GND MCP16301 RBOT VIN RTOP DB CB VOUT REN L CIN GND D1 COUT GND GND DB 4 EN BOOST 1 CB REN VIN 4V to 30V CIN GND Component CIN COUT L RTOP RBOT D1 CB REN Value 1 µF 10 µF 15 µH 31.2 kΩ 10 kΩ PD3S130 100 nF 1 MΩ 2 FB 3 5 VIN MCP16301 SW 6 COUT D1 RTOP L VOUT 3.3V RBOT FIGURE 5-2: MCP16301 SOT-23-6 D2 Recommended Layout, 200 mA Design. DS25004A-page 22 © 2011 Microchip Technology Inc. MCP16301 6.0 TYPICAL APPLICATION CIRCUITS Boost Diode BOOST CB EN VIN 6V to 30V CIN GND FB RBOT VIN FW Diode MCP16301 SW COUT RTOP L VOUT 3.3V Component CIN COUT L RTOP RBOT FW Diode Boost Diode CB Value 2 x 4.7 µF 2 x 10 µF 15 µH 31.2 kΩ 10 kΩ B140 1N4148 100 nF Manufacturer Taiyo Yuden® Taiyo Yuden Coilcraft® Panasonic®-ECG Panasonic-ECG Diodes® Inc. Diodes Inc. AVX® Corporation Part Number Comment UMK325B7475KM-T CAP 4.7µF 50V CERAMIC X7R 1210 10% JMK212B7106KG-T CAP 10µF 6.3V CERAMIC X7R 0805 10% MSS6132-153ML ERJ-3EKF3162V ERJ-3EKF1002V B140-13-F 1N4448WS-7-F 0603YC104KAT2A MSS6132 15µH Shielded Power Inductor RES 31.6K OHM 1/10W 1% 0603 SMD RES 10.0K OHM 1/10W 1% 0603 SMD DIODE SCHOTTKY 40V 1A SMA DIODE SWITCH 75V 200MW SOD-323 CAP 0.1µF 16V CERAMIC X7R 0603 10% FIGURE 6-1: Typical Application 30V VIN to 3.3V VOUT. © 2011 Microchip Technology Inc. DS25004A-page 23 MCP16301 Boost Diode BOOST CB EN 15V to 30V VIN VIN FW Diode CIN FB GND RBOT MCP16301 SW COUT RTOP L DZ VOUT 12V Component CIN COUT L RTOP RBOT FW Diode Boost Diode CB DZ Value 2 x 4.7 µF 2 x 10 µF 56 µH 140 kΩ 10 kΩ B140 1N4148 100 nF 7.5V Zener Manufacturer Taiyo Yuden Taiyo Yuden Coilcraft Panasonic-ECG Panasonic-ECG Diodes Inc. Diodes Inc. AVX Corporation Diodes Inc. Part Number JMK212B7106KG-T MSS6132-153ML ERJ-3EKF3162V ERJ-3EKF1002V B140-13-F 1N4448WS-7-F 0603YC104KAT2A MMSZ5236BS-7-F Comment CAP CER 10µF 25V X7R 10% 1206 MSS7341 56µH Shielded Power Inductor RES 140K OHM 1/10W 1% 0603 SMD RES 10.0K OHM 1/10W 1% 0603 SMD DIODE SCHOTTKY 40V 1A SMA DIODE SWITCH 75V 200MW SOD-323 CAP 0.1µF 16V CERAMIC X7R 0603 10% DIODE ZENER 7.5V 200MW SOD-323 UMK325B7475KM-T CAP 4.7uF 50V CERAMIC X7R 1210 10% FIGURE 6-2: Typical Application 15V – 30V Input; 12V Output. DS25004A-page 24 © 2011 Microchip Technology Inc. MCP16301 DZ Boost Diode BOOST CB EN VIN 12V CIN GND FB RBOT VIN FW Diode MCP16301 SW COUT RTOP L VOUT 2V Component CIN COUT L RTOP RBOT FW Diode Boost Diode CB DZ Value 10 µF 22 µF 10 µH 15 kΩ 10 kΩ PD3S 1N4148 100 nF 7.5V Zener Manufacturer Taiyo Yuden Taiyo Yuden Coilcraft Panasonic-ECG Panasonic-ECG Diodes Inc. Diodes Inc. AVX Corporation Diodes Inc. Part Number JMK316B7226ML-T MSS4020-103ML ERJ-3EKF1502V ERJ-3EKF1002V PD3S120L-7 1N4448WS-7-F 0603YC104KAT2A MMSZ5236BS-7-F Comment CAP CER 22µF 6.3V X7R 1206 10 µH Shielded Power Inductor RES 15.0K OHM 1/10W 1% 0603 SMD RES 10.0K OHM 1/10W 1% 0603 SMD DIODE SCHOTTKY 1A 20V POWERDI323 DIODE SWITCH 75V 200MW SOD-323 CAP 0.1uF 16V CERAMIC X7R 0603 10% DIODE ZENER 7.5V 200MW SOD-323 EMK316B7106KL-TD CAP CER 10µF 16V X7R 10% 1206 FIGURE 6-3: Typical Application 12V Input; 2V Output at 600 mA. © 2011 Microchip Technology Inc. DS25004A-page 25 MCP16301 Boost Diode DZ RZ EN VIN 10V to 16V CIN FB GND RBOT VIN FW Diode MCP16301 SW COUT RTOP BOOST CB L VOUT 2.5V CZ Component CIN COUT L RTOP RBOT FW Diode Boost Diode CB DZ CZ RZ Value 10 µF 22 µF 12 µH 21.5 kΩ 10 kΩ DFLS120 1N4148 100 nF 7.5V Zener 1 µF 1 kΩ Manufacturer Taiyo Yuden Taiyo Yuden Coilcraft Panasonic-ECG Panasonic-ECG Diodes Inc. Diodes Inc. AVX Corporation Diodes Inc. Taiyo Yuden Panasonic-ECG Part Number JMK316B7226ML-T LPS4414-123MLB ERJ-3EKF2152V ERJ-3EKF1002V DFLS120L-7 1N4448WS-7-F 0603YC104KAT2A MMSZ5236BS-7-F LMK107B7105KA-T ERJ-8ENF1001V Comment CAP CER 22 µF 6.3V X7R 1206 LPS4414 12 uH Shielded Power Inductor RES 21.5K OHM 1/10W 1% 0603 SMD RES 10.0K OHM 1/10W 1% 0603 SMD DIODE SCHOTTKY 20V 1A POWERDI123 DIODE SWITCH 75V 200MW SOD-323 CAP 0.1uF 16V CERAMIC X7R 0603 10% DIODE ZENER 7.5V 200MW SOD-323 CAP CER 1.0UF 10V X7R 0603 RES 1.00K OHM 1/4W 1% 1206 SMD TMK316B7106KL-TD CAP CER 10 µF 25V X7R 10% 1206 FIGURE 6-4: Typical Application 10V to 16V VIN to 2.5V VOUT. DS25004A-page 26 © 2011 Microchip Technology Inc. MCP16301 Boost Diode EN REN VIN 4V to 30V CIN GND FB RBOT VIN FW Diode MCP16301 SW COUT RTOP BOOST CB L VOUT 3.3V Component CIN COUT L RTOP RBOT FW Diode Boost Diode CB REN Value 1 µF 10 µF 15 µH 31.2 kΩ 10 kΩ B0540 1N4148 100 nF 10 MΩ Manufacturer Taiyo Yuden Taiyo Yuden Coilcraft Panasonic-ECG Panasonic-ECG Diodes Inc. Diodes Inc. TDK® Corporation Panasonic-ECG Part Number JMK107BJ106MA-T LPS3015-153MLB ERJ-2RKF3162X ERJ-3EKF1002V B0540WS-7 1N4448WS-7-F C1005X5R0J104M ERJ-2RKF1004X Comment CAP CER 10µF 6.3V X5R 0603 INDUCTOR POWER 15µH 0.61A SMD RES 31.6K OHM 1/10W 1% 0402 SMD RES 10.0K OHM 1/10W 1% 0603 SMD DIODE SCHOTTKY 0.5A 40V SOD323 DIODE SWITCH 75V 200MW SOD-323 CAP CER 0.10uF 6.3V X5R 0402 RES 1.00M OHM 1/10W 1% 0402 SMD GMK212B7105KG-T CAP CER 1.0µF 35V X7R 0805 FIGURE 6-5: Typical Application 4V to 30V VIN to 3.3V VOUT at 150 mA. © 2011 Microchip Technology Inc. DS25004A-page 27 MCP16301 NOTES: DS25004A-page 28 © 2011 Microchip Technology Inc. MCP16301 7.0 7.1 PACKAGING INFORMATION Package Marking Information 6-Lead SOT-23 Example HTNN HT25 Legend: XX...X Y YY WW NNN e3 * Note: Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. © 2011 Microchip Technology Inc. DS25004A-page 29 MCP16301 6-Lead Plastic Small Outline Transistor (CHY) [SOT-23] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging b N 4 E E1 PIN 1 ID BY LASER MARK 1 2 e e1 D 3 A A2 c φ A1 L L1 Units Dimension Limits MIN MILLIMETERS NOM 6 0.95 BSC 1.90 BSC 0.90 0.89 0.00 2.20 1.30 2.70 0.10 0.35 0° 0.08 – – – – – – – – – – 1.45 1.30 0.15 3.20 1.80 3.10 0.60 0.80 30° 0.26 MAX Number of Pins Pitch Outside Lead Pitch Overall Height Molded Package Thickness Standoff Overall Width Molded Package Width Overall Length Foot Length Footprint Foot Angle Lead Thickness N e e1 A A2 A1 E E1 D L L1 I c Lead Width b 0.20 – 0.51 Notes: 1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side. 2. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing C04-028B DS25004A-page 30 © 2011 Microchip Technology Inc. MCP16301 6-Lead Plastic Small Outline Transistor (CHY) [SOT-23] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging © 2011 Microchip Technology Inc. DS25004A-page 31 MCP16301 NOTES: DS25004A-page 32 © 2011 Microchip Technology Inc. MCP16301 APPENDIX A: REVISION HISTORY Revision A (May 2011) • Original Release of this Document. © 2011 Microchip Technology Inc. DS25004A-page 33 MCP16301 NOTES: DS25004A-page 34 © 2011 Microchip Technology Inc. MCP16301 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device X Tape and Reel -X Temperature Range /XXX Package Examples: a) MCP16301T-I/CHY: Step-Down Regulator, Tape and Reel, Industrial Temperature 6LD SOT-23 pkg. Device MCP16301T: High Voltage Step-Down Regulator, Tape and Reel = -40°C to +85°C Temperature Range I (Industrial) Package CHY = Plastic Small Outline Transistor (SOT-23), 6-lead © 2011 Microchip Technology Inc. DS25004A-page 35 MCP16301 NOTES: DS25004A-page 36 © 2011 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • • Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” • • • Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance, TSHARC, UniWinDriver, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2011, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 978-1-61341-179-7 Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. © 2011 Microchip Technology Inc. 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