MCP1415

MCP1415/16 Tiny 1.5A, High-Speed Power MOSFET Driver Features • High Peak Output Current: 1.5A (typical) • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • Low Shoot-Through/Cross-Conduction Current in Output Stage • High Capacitive Load Drive Capability: - 470 pF in 13 ns (typical) - 1000 pF in 20 ns (typical) • Short Delay Times: 41 ns (tD1), 48 ns (tD2) (typical) • Low Supply Current: - With Logic ‘1’ Input - 0.65 mA (typical) - With Logic ‘0’ Input - 0.1 mA (typical) • Latch-Up Protected: Will Withstand 500 mA Reverse Current • Logic Input Will Withstand Negative Swing Up to 5V • Space-saving 5L SOT-23 Package General Description MCP1415/16 devices are high-speed MOSFET drivers that are capable of providing 1.5A of peak current. The inverting or non-inverting single channel output is directly controlled from either TTL or CMOS (3V to 18V) logic. These devices also feature low shootthrough current, matched rise and fall time, and short propagation delays which make them ideal for high switching frequency applications. MCP1415/16 devices operate from a single 4.5V to 18V power supply and can easily charge and discharge 1000 pF gate capacitance in under 20 ns (typical). They provide low enough impedances in both the on and off states to ensure that the intended state of the MOSFET will not be affected, even by large transients. These devices are highly latch-up resistant under any condition within their power and voltage ratings. They are not subject to damage when noise spiking (up to 5V, of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current being forced back into their outputs. All terminals are fully protected against Electrostatic Discharge (ESD) up to 2.0 kV (HBM) and 400V (MM). Applications • • • • • Switch Mode Power Supplies Pulse Transformer Drive Line Drivers Level Translator Motor and Solenoid Drive Package Types: SOT-23-5 MCP1415 NC 1 VDD 2 IN 3 4 GND GND 5 OUT MCP1416 OUT MCP1415R MCP1416R NC 1 GND 2 IN 3 4 OUT OUT VDD VDD 5  2010 Microchip Technology Inc. DS22092D-page 1 MCP1415/16 Functional Block Diagram Inverting 650 µA 300 mV Output VDD Input Effective Input C = 25 pF (Each Input) GND Note: 4.7V Non-inverting MCP1415 Inverting MCP1416 Non-inverting Unused inputs should be grounded. DS22092D-page 2  2010 Microchip Technology Inc. MCP1415/16 1.0 ELECTRICAL CHARACTERISTICS † Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings † VDD, Supply Voltage............................................. +20V VIN, Input Voltage.............. (VDD + 0.3V) to (GND - 5V) Package Power Dissipation (TA = 50°C) 5L SOT23...................................................... 0.39W ESD Protection on all Pins ......................2.0 kV (HBM) ....................................................................400V (MM) DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = +25°C, with 4.5V  VDD  18V Parameters Input Logic ‘1’ High Input Voltage Logic ‘0’ Low Input Voltage Input Current Input Voltage Output High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Latch-Up Protection Withstand Reverse Current Switching Time (Note 1) Rise Time Fall Time Delay Time Delay Time Power Supply Supply Voltage Power Supply Current Note 1: 2: VDD IS IS 4.5 — — — 0.65 0.1 18 1.1 0.15 V mA mA VIN = 3V VIN = 0V tR tF tD1 tD2 — — — — 20 20 41 48 25 25 50 55 ns ns ns ns Figure 4-1, Figure 4-2 CL = 1000 pF (Note 2) Figure 4-1, Figure 4-2 CL = 1000 pF (Note 2) Figure 4-1, Figure 4-2 (Note 2) Figure 4-1, Figure 4-2 (Note 2) VOH VOL ROH ROL IPK IREV VDD - 0.025 — — — — 0.5 — — 6 4 1.5 — — 0.025 7.5 5.5 — — V V   A A DC Test DC Test IOUT = 10 mA, VDD = 18V (Note 2) IOUT = 10 mA, VDD = 18V (Note 2) VDD = 18V (Note 2) Duty cycle  2%, t  300 µs (Note 2) VIH VIL IIN VIN 2.4 — -1 -5 1.9 1.6 — — — 0.8 +1 VDD+0.3 V V µA V 0V  VIN  VDD Sym Min Typ Max Units Conditions Switching times ensured by design. Tested during characterization, not production tested.  2010 Microchip Technology Inc. DS22092D-page 3 MCP1415/16 DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise indicated, over operating range with 4.5V  VDD  18V. Parameters Input Logic ‘1’, High Input Voltage Logic ‘0’, Low Input Voltage Input Current Input Voltage Output High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Switching Time (Note 1) Rise Time Fall Time Delay Time Delay Time Power Supply Supply Voltage Power Supply Current Note 1: 2: VDD IS IS 4.5 — — — 0.75 0.15 18 1.5 0.25 V mA mA VIN = 3.0V VIN = 0V tR tF tD1 tD2 — — — — 30 30 45 50 40 40 55 60 ns ns ns Figure 4-1, Figure 4-2 CL = 1000 pF (Note 2) Figure 4-1, Figure 4-2 CL = 1000 pF (Note 2) Figure 4-1, Figure 4-2 (Note 2) Figure 4-1, Figure 4-2 (Note 2) VOH VOL ROH ROL VDD - 0.025 — — — — — 8.5 6 — 0.025 9.5 7 V V   DC Test DC Test IOUT = 10 mA, VDD = 18V (Note 2) IOUT = 10 mA, VDD = 18V (Note 2) VIH VIL IIN VIN 2.4 — -10 -5 — — — — — 0.8 +10 VDD+0.3 V V µA V 0V  VIN  VDD Sym Min Typ Max Units Conditions Switching times ensured by design. Tested during characterization, not production tested. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V  VDD  18V Parameter Temperature Ranges Specified Temperature Range Maximum Junction Temperature Storage Temperature Range Package Thermal Resistances Thermal Resistance, 5LD SOT23 JA — 256 — °C/W TA TJ TA -40 — -65 — — — +125 +150 +150 °C °C °C Sym Min Typ Max Units Comments DS22092D-page 4  2010 Microchip Technology Inc. MCP1415/16 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  = 18V. 400 350 Rise Time (ns) 300 250 200 150 100 50 0 4 6 8 10 12 14 16 18 Supply Voltage (V) 3,300 pF 1,000 pF 6,800 pF 470 pF 300 10,000 pF 10,000 pF 250 Fall Time (ns) 200 150 100 50 0 4 6 8 10 12 14 16 18 Supply Voltage (V) 1,000 pF 3,300 pF 6,800 pF 470 pF FIGURE 2-1: Voltage. 225 200 Rise Time (ns) 175 150 125 100 75 50 25 0 100 5V Rise Time vs. Supply FIGURE 2-4: Voltage. 200 Fall Time vs. Supply 12V 175 Fall Time (ns) 150 125 100 75 50 25 0 100 5V 18V 12V 18V 1000 Capacitive Load (pF) 10000 1000 Capacitive Load (pF) 10000 FIGURE 2-2: Load. 35 30 Time (ns) 25 20 15 10 -40 -25 -10 5 tFALL Rise Time vs. Capacitive FIGURE 2-5: Load. 54 Propagation Delay (ns) Fall Time vs. Capacitive CLOAD = 1000 pF VDD = 18V 52 50 48 46 44 42 40 4 VDD = 12V tD2 tRISE tD1 20 35 50 65 80 95 110 125 5 6 7 8 9 10 11 12 Temperature (°C) Input Amplitude (V) FIGURE 2-3: Temperature. Rise and Fall Times vs. FIGURE 2-6: Input Amplitude. Propagation Delay Time vs.  2010 Microchip Technology Inc. DS22092D-page 5 MCP1415/16 Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  = 18V. 115 Quiescent Current (mA) Propagation Delay (ns) 105 95 85 75 65 55 45 35 4 6 8 10 12 14 16 18 Supply Voltage (V) tD2 tD1 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 VDD = 18V Input = 1 Input = 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (°C) FIGURE 2-7: Supply Voltage. 60 Propagation Delay (ns) 55 50 45 40 35 30 -40 -25 -10 5 tD1 tD2 Propagation Delay Time vs. FIGURE 2-10: Temperature. 3.0 Input Threshold (V) 2.5 2.0 1.5 VLO Quiescent Current vs. VDD = 18V VHI 1.0 0.5 20 35 50 65 80 95 110 125 4 6 8 10 12 14 16 18 Temperature (°C) Supply Voltage (V) FIGURE 2-8: Temperature. 0.8 Quiescent Current (mA) 0.6 0.5 0.4 0.3 0.2 0.1 0 4 6 8 Input = 0 Input = 1 Propagation Delay Time vs. FIGURE 2-11: Voltage. 2.0 Input Threshold (V) 1.9 1.8 1.7 1.6 1.5 1.4 1.3 -40 -25 -10 5 Input Threshold vs. Supply VDD = 12V 0.7 VHI VLO 10 12 14 16 18 20 35 50 65 80 95 110 125 Temperature (°C) Supply Voltage (V) FIGURE 2-9: Supply Voltage. Quiescent Current vs. FIGURE 2-12: Temperature. Input Threshold vs. DS22092D-page 6  2010 Microchip Technology Inc. MCP1415/16 Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  = 18V. 160 Supply Current (mA) 140 120 100 80 60 40 20 0 100 1000 Capacitive Load (pF) 10000 500 kHz 200 kHz VDD = 18V 1 MHz 50 kHz 100 kHz 140 Supply Current (mA) 120 100 80 60 40 20 0 VDD = 18V 10,000 pF 470 pF 1,000 pF 3,300 pF 6,800 pF 10 100 Frequency (kHz) 1000 FIGURE 2-13: Capacitive Load. 90 Supply Current (mA) 80 70 60 50 40 30 20 10 0 100 500 kHz Supply Current vs. FIGURE 2-16: Frequency. 120 Supply Current vs. VDD = 12V 1 MHz VDD = 12V 470 pF 10,000 pF 6,800 pF 50 kHz 100 kHz 200 kHz Supply Current (mA) 100 80 60 3,300 pF 40 20 0 100 1,000 pF 1000 Capacitive Load (pF) 10000 1000 Frequency (kHz) 10000 FIGURE 2-14: Capacitive Load. 40 Supply Current (mA) 35 30 25 20 15 10 5 500 kHz Supply Current vs. FIGURE 2-17: Frequency. 60 Supply Current (mA) 50 40 30 20 10 0 100 470 pF Supply Current vs. VDD = 6V 1 MHz V DD = 6V 10,000 pF 50 kHz 100 kHz 200 kHz 6,800 pF 3,300 pF 1,000 pF 0 100 1000 Capacitive Load (pF) 10000 1000 Frequency (kHz) 10000 FIGURE 2-15: Capacitive Load. Supply Current vs. FIGURE 2-18: Frequency. Supply Current vs.  2010 Microchip Technology Inc. DS22092D-page 7 MCP1415/16 Note: Unless otherwise indicated, TA = +25°C with 4.5V  VDD  = 18V. 30 25 TA = +125°C Crossover Energy (A*sec) VIN = 0V (MCP1415) VIN = 5V (MCP1416) 1E-07 ROUT-HI (Ω) 20 15 10 5 0 4 6 8 10 12 14 16 18 Supply Voltage (V) TA = + 25°C 1E-08 1E-09 1E-10 4 6 8 10 12 14 16 18 Supply Voltage (V) FIGURE 2-19: Output Resistance (Output High) vs. Supply Voltage. 25 20 ROUT-LO (Ω) 15 10 5 0 4 6 8 10 12 14 16 18 Supply Voltage (V) TA = +25°C TA = +125°C FIGURE 2-21: Supply Voltage. Crossover Energy vs. VIN = 5V (MCP1415) VIN = 0V (MCP1416) FIGURE 2-20: Output Resistance (Output Low) vs. Supply Voltage. DS22092D-page 8  2010 Microchip Technology Inc. MCP1415/16 3.0 PIN DESCRIPTIONS PIN FUNCTION TABLE Symbol MCP1415/6 NC VDD IN GND OUT MCP1415R/6R NC GND IN OUT VDD No Connection Supply Input Control Input Ground Output Description The descriptions of the pins are listed in Table 3-1. TABLE 3-1: SOT-23-5 Pin 1 2 3 4 5 3.1 Supply Input (VDD) 3.3 Ground (GND) VDD is the bias supply input for the MOSFET driver and has a voltage range of 4.5V to 18V. This input must be decoupled to ground with a local capacitor. This bypass capacitor provides a localized low impedance path for the peak currents that are to be provided to the load. Ground is the device return pin. The ground pin should have a low impedance connection to the bias supply source return. High peak currents will flow out the ground pin when the capacitive load is being discharged. 3.2 Control Input (IN) 3.4 Output (OUT) The MOSFET driver input is a high impedance, TTL/ CMOS compatible input. The input also has hysteresis between the high and low input levels, allowing them to be driven from a slow rising and falling signals, and to provide noise immunity. The output is a CMOS push-pull output that is capable of sourcing and sinking 1.5A of peak current (VDD = 18V). The low output impedance ensures the gate of the external MOSFET will stay in the intended state even during large transients. This output also has a reverse current latch-up rating of 500 mA.  2010 Microchip Technology Inc. DS22092D-page 9 MCP1415/16 NOTES: DS22092D-page 10  2010 Microchip Technology Inc. MCP1415/16 4.0 4.1 APPLICATION INFORMATION General Information VDD = 18V 1 µF 0.1 µF Ceramic MOSFET drivers are high-speed, high current devices which are intended to source/sink high peak currents to charge/discharge the gate capacitance of external MOSFETs or IGBTs. In high frequency switching power supplies, the PWM controller may not have the drive capability to directly drive the power MOSFET. A MOSFET driver like the MCP1415/16 family can be used to provide additional source/sink current capability. Input Output CL = 1000 pF MCP1416 4.2 MOSFET Driver Timing The ability of a MOSFET driver to transition from a fullyoff state to a fully-on state are characterized by the drivers rise time (tR), fall time (tF), and propagation delays (tD1 and tD2). The MCP1415/16 family of drivers can typically charge and discharge a 1000 pF load capacitance in 20 ns along with a typical turn on (tD1) propagation delay of 41 ns. Figure 4-1 and Figure 4-2 show the test circuit and timing waveform used to verify the MCP1415/16 timing. VDD = 18V 1 µF 0.1 µF Ceramic +5V Input 0V 18V Output 0V 10% 10% tD1 90% 90% tR tD2 90% tF 10% FIGURE 4-2: Waveform. Non-Inverting Driver Timing 4.3 Decoupling Capacitors Input Output CL = 1000 pF MCP1415 Careful layout and decoupling capacitors are required when using power MOSFET drivers. Large current are required to charge and discharge capacitive loads quickly. For example, approximately 720 mA are needed to charge a 1000 pF load with 18V in 25 ns. To operate the MOSFET driver over a wide frequency range with low supply impedance, a ceramic and low ESR film capacitor is recommended to be placed in parallel between the driver VDD and GND. A 1.0 µF low ESR film capacitor and a 0.1 µF ceramic capacitor placed between pins 2 and 4 is required for reliable operation. These capacitors should be placed close to the driver to minimize circuit board parasitics and provide a local source for the required current. 90% +5V Input 0V 18V Output 0V 10% tD1 90% 10% tF 90% tD2 tR 10% FIGURE 4-1: Waveform. Inverting Driver Timing  2010 Microchip Technology Inc. DS22092D-page 11 MCP1415/16 4.4 Power Dissipation 4.4.3 OPERATING POWER DISSIPATION The total internal power dissipation in a MOSFET driver is the summation of three separate power dissipation elements. The operating power dissipation occurs each time the MOSFET driver output transitions because for a very short period of time both MOSFETs in the output stage are on simultaneously. This cross-conduction current leads to a power dissipation describe in Equation 4-4. EQUATION 4-1: P T = PL + PQ + P CC Where: PT PL PQ PCC = = = = Total power dissipation Load power dissipation Quiescent power dissipation Operating power dissipation EQUATION 4-4: P Where: CC f VDD = = = Cross-conduction constant (A*sec) Switching frequency MOSFET driver supply voltage CC = CC  f  V DD 4.4.1 CAPACITIVE LOAD DISSIPATION The power dissipation caused by a capacitive load is a direct function of the frequency, total capacitive load, and supply voltage. The power lost in the MOSFET driver for a complete charging and discharging cycle of a MOSFET is shown in Equation 4-2. 4.5 PCB Layout Considerations EQUATION 4-2: P Where: f CT VDD = = = L = fC V T DD 2 Switching frequency Total load capacitance MOSFET driver supply voltage Proper PCB layout is important in high current, fast switching circuits to provide proper device operation and robustness of design. Improper component placement may cause errant switching, excessive voltage ringing, or circuit latch-up. PCB trace loop area and inductance must be minimized. This is accomplished by placing the MOSFET driver directly at the load and placing the bypass capacitor directly at the MOSFET driver (Figure 4-3). Locating ground planes or ground return traces directly beneath the driver output signal also reduces trace inductance. A ground plane will also help as a radiated noise shield as well as providing some heat sinking for power dissipated within the device (Figure 4-4). 4.4.2 QUIESCENT POWER DISSIPATION The power dissipation associated with the quiescent current draw depends upon the state of the input pin. The MCP1415/16 devices have a quiescent current draw when the input is high of 0.65 mA (typical) and 0.1 mA (typical) when the input is low. The quiescent power dissipation is shown in Equation 4-3. EQUATION 4-3: Where: PQ =  IQH  D + IQL   1 – D    VDD = = = = Quiescent current in the high state Duty cycle Quiescent current in the low state MOSFET driver supply voltage FIGURE 4-3: (TOP). Recommended PCB Layout IQH D IQL VDD FIGURE 4-4: (BOTTOM). Recommended PCB Layout DS22092D-page 12  2010 Microchip Technology Inc. MCP1415/16 5.0 5.1 PACKAGING INFORMATION Package Marking Information 5-Lead SOT-23 Standard Markings for SOT-23 Example: XXNN 1 Part Number MCP1415T-E/OT MCP1416T-E/OT MCP1415RT-E/OT MCP1416RT-E/OT Code FYNN FZNN F7NN F8NN FYNN 1 Legend: XX...X Y YY WW NNN e3 * Note: Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.  2010 Microchip Technology Inc. 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