MCP1631/HV/MCP1631V/VHV
High-Speed, Pulse Width Modulator
Features
• Programmable Switching Battery Charger Designs • High-Speed Analog PWM Controller (2 MHz Operation) • Combine with Microcontroller for “Intelligent” Power System Development • Peak Current Mode Control (MCP1631) • Voltage Mode Control (MCP1631V) • High Voltage Options Operate to +16V Input: - MCP1631HV Current Mode - MCP1631VHV Voltage Mode • Regulated Output Voltage Options: +5.0V or +3.3V 250 mA maximum current • External Oscillator Input sets Switching Frequency and Maximum Duty Cycle Limit • External Reference Input Sets Regulation Voltage or Current • Error Amplifier, Battery Current ISNS Amplifier, Battery Voltage VSNS Amplifier Integrated • Integrated Overvoltage Comparator • Integrated High Current Low Side MOSFET Driver (1A Peak) • Shutdown mode reduces IQ to 2.4 µA (typical) • Internal Overtemperature Protection • Undervoltage Lockout (UVLO) • Package Options: - 4 mm x 4 mm 20-Lead QFN (MCP1631/MCP1631V only) - 20-Lead TSSOP (All Devices) - 20-Lead SSOP (All Devices)
General Description
T he MCP16 31/MC P1631 V is a hi gh-spe ed analog pulse width modulator (PWM) used to develop intelligent power systems. When combined with a microcontroller, the MCP1631/MCP1631V will control the power system duty cycle providing output voltage or current regulation. The microcontroller can be used to adjust output voltage or current, switching frequency and maximum duty cycle while providing additional features making the power system more intelligent, robust and adaptable. Typical applications for the MCP1631/MCP1631V include programmable switch mode battery chargers capable of charging multiple chemistries, like Li-Ion, NiMH, NiCd and Pb-Acid configured as single or multiple cells. By combining with a small microcontroller, intelligent LED lighting designs and programmable SEPIC topology voltage and current sources can also be developed. The MCP1631/MCP1631V inputs were developed to be attached to the I/O pins of a microcontroller for design flexibility. Additional features integrated into the MCP1631HV/MCP1631VHV provide signal conditioning and protection features for battery charger or constant current source applications. For applications that operate from a high voltage input, the MCP1631HV and MCP1631VHV device options can be used to operate directly from a +3.5V to +16V input. For these applications, an additional low drop out +5V or +3.3V regulated output is available and can provide current up to 250 mA to power a microcontroller and auxiliary circuits.
Applications
• High Input Voltage Programmable Switching Battery Chargers • Supports Multiple Chemistries Li-Ion, NiMH, NiCd Intelligent and Pb-Acid • LED Lighting Applications • Constant Current SEPIC Power Train Design • USB Input Programmable Switching Battery Chargers
© 2008 Microchip Technology Inc.
DS22063B-page 1
MCP1631/HV/MCP1631V/VHV
Package Types
20-Lead SSOP and TSSOP MCP1631/MCP1631V PGND SHDN OSCIN OSCDIS OVIN VREF AGND NC NC NC 1 2 3 4 5 6 7 8 9 10 20 VEXT 19 PVDD 18 CS/VRAMP 17 FB 16 COMP 15 ISOUT 14 VSOUT 13 ISIN 12 VSIN 11 AVDD_IN PGND SHDN OSCIN OSCDIS OVIN VREF AGND NC NC VIN 20-Lead SSOP and TSSOP MCP1631HV/MCP1631VHV 1 2 3 4 5 6 7 8 9 10 20 VEXT 19 PVDD 18 CS/VRAMP
17 FB 16 COMP
15 ISOUT 14 VSOUT
13 ISIN 12 VSIN 11 AVDD_OUT
OSCDIS
OSCIN 17
20 AGND NC 1 2 3 4 5 6 ISIN
19
18
16 15 PGND 14 VEXT
AVDD_IN
NC VSIN
EP 21
SHDN 13 PVDD 12 NC 11 CS/VRAMP 10 FB
VREF
OVIN
7 VSOUT
8 ISOUT
9 COMP
20 Lead 4x4 QFN MCP1631/MCP1631V
DS22063B-page 2
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
Typical Application Diagram
Multi-cell, Multi-Chemistry Charger VIN Range +5.5V to +16V CIN MCP1631HV VIN AVDD_OUT PVDD OSCIN ISOUT NC FB NC COMP AGND VEXT CS PGND ISIN OVIN VSIN VREF SHDN OSCDIS VSOUT L1B L1A CC SCHOTTKY DIODE COUT RTHERM
R PIC12F683 VDD CCP1 GP4 GND GP1/C GP3 GP5 GP0/C
C
AVDD_OUT
© 2008 Microchip Technology Inc.
LED
DS22063B-page 3
MCP1631/HV/MCP1631V/VHV
Functional Block Diagram(1)
MCP1631HV/VHV High Speed PIC PWM
Internal Regulator for MCP1631HV and MCP1631VHV Options Only; For MCP1631 and MCP1631V AVDD_IN is input
VIN
+3.3V or +5.0V LDO 250 mA
VDD
Internal 1.2V VREF VDD
AVDD_OUT / AVDD_IN Shutdown Control A3 Remains On
SHDN OVIN
C2 +
Overvoltage Comp w/ Hysteresis
PVDD VDD OSCDIS 100 kΩ 0.1 µA OT VEXT UVLO S Q PGND
OSCIN
VDD
VDD CS/VRAMP COMP VDD FB VREF A1 + AGND + C1 R Q 10R VDD R R
100 kΩ
ISIN
A2
2R R 2.7V Clamp A3 Remove for MCP1631V and MCP1631VHV Options VDD
Note 1: For Shutdown control, amplifier A3 remains functional so battery voltage can be sensed during discharge phase. 2: For HV options, internal Low Drop Out Regulator provides +3.3V or +5.0V bias to VDD.
DS22063B-page 4
© 2008 Microchip Technology Inc.
+ + -
-
ISOUT
VSIN
VSOUT
MCP1631/HV/MCP1631V/VHV
1.0 ELECTRICAL CHARACTERISTICS
† Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings †
VIN - GND (MCP1631/V)................................................+6.5V VIN - GND (MCP1631HV/VHV)....................................+18.0V All Other I/O ..............................(GND - 0.3V) to (VDD + 0.3V) LX to GND............................................. -0.3V to (VDD + 0.3V) VEXT Output Short Circuit Current ........................ Continuous Storage temperature .....................................-65°C to +150°C Maximum Junction Temperature ...................-40°C to +150°C Operating Junction Temperature...................-40°C to +125°C ESD Protection On All Pins: HBM ................................................................................. 4 kV MM ..................................................................................400V
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VDD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums. Parameters Input Characteristics Input Voltage (MCP1631/V) Input Voltage (MCP1631HV/VHV) Undervoltage Lockout (MCP1631/V) Undervoltage Lockout Hysteresis (MCP1631/MCP1631V) Input Quiescent Current (MCP1631/V, MCP1631HV,VHV) Shutdown Current I_AVDD for MCP1631/V I_VIN for MCP1631HV/VHV Low Level Input Voltage High Level Input Voltage Input Leakage Current External Oscillator Range VDD VDD UVLO UVLO_HYS I(VIN) IIN_SHDN 3.0 3.5 2.7 40 — — 2.4 4.4 — 2.0 — — — 0.005 — 12 17 0.8 — 1 2 µA µA V V µA MHz Maximum operating frequency is dependent upon circuit topology and duty cycle. — — 2.8 64 3.7 5.5 16.0 3.0 100 5 V V V mV mA Non-HV Options HV Options (Note 2) VIN Falling, VEXT low when input below UVLO threshold UVLO Hysteresis SHDN = VDD =OSCDIS SHDN = GND =OSCDIS, Note: Amplifier A3 remains powered during Shutdown. Sym Min Typ Max Units Conditions
OSCIN, OSCDIS and SHDN Input Levels VIL VIH ILEAK FOSC
Minimum Oscillator High Time Minimum Oscillator Low Time Oscillator Rise and Fall Time Oscillator Input Capacitance Note 1:
TOH_MIN. TOL_MIN. TR and TF COSC
— 0.01 —
10 — 5
— 10 —
ns µs pf Note 1
2: 3: 4: 5:
External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and specified that are not production tested. The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)). TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater. DS22063B-page 5
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VDD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums. Parameters External Reference Input Reference Voltage Input Internal Driver) RDSON P-channel RDSON N-channel VEXT Rise Time VEXT Fall Time Error Amplifier (A1) Input Offset Voltage A1 Input Bias Current Error Amplifier PSRR Common Mode Input Range Common Mode Rejection Ratio Open-loop Voltage Gain AVOL VOS IBIAS PSRR VCM -5 — — GND - 0.3 — 80 -0.6 0.05 85.4 — 90 95 +5 1 — VIN — — mV µA dB V dB dB VIN = 5V, VCM = 0V to 2.5V RL = 5 kΩ to VIN/2, 100 mV < VEAOUT < VIN - 100 mV, VCM = 1.2V RL = 5 kΩ to VIN/2 VIN = 5V VIN = 5V, VREF = 1.2V, VFB = 1.4V, VCOMP = 2.0V VIN = 5V, VREF = 1.2V, VFB = 1.0V, VCOMP = 2.0V, Absolute Value VIN = 3.0V to 5.0V, VCM = 1.2V RDSon_P RDSon_N TRISE TFALL — — — — 7.2 3.8 2.5 2.7 15 15 18 18 Ω Ω ns ns CL = 100 pF Typical for VIN = 5V (Note 1) CL = 100 pF Typical for VIN = 5V (Note 1) VREF 0 — AVDD V The reference input is capable of rail-to-rail operation. Sym Min Typ Max Units Conditions
Low-level Output Gain Bandwidth Product Error Amplifier Sink Current Error Amplifier Source Current
VOL GBWP ISINK ISOURCE
— — 4 -2
25 3.5 12 -9.8
GND + 65 — — —
mV MHz mA mA
Current Sense (CS) Amplifier (A2) Input Offset Voltage CS Input Bias Current CS Amplifier PSRR Closed-loop Voltage Gain VOS IBIAS PSRR A2VCL -3.0 — — — 1.2 0.13 65 10 +3.0 1 — — mV µA dB V/V VIN = 3.0V to 5.0V, VCM = 0.12V, GAIN = 10 RL = 5 kΩ to VIN/2, 100 mV < VOUT < VIN - 100 mV, VCM = +0.12V RL = 5 kΩ to VIN/2
Low-level Output CS Sink Current CS Amplifier Source Current Voltage Sense (VS) Amplifier (A3) Input Offset Voltage VS Input Bias Current Note 1:
VOL ISINK ISOURCE VOS IBIAS
5 5 -5 -5 —
11 17.7 -19.5 0.9 0.001
GND + 50 — — +5 1
mV mA mA mV µA
2: 3: 4: 5:
External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and specified that are not production tested. The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)). TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater.
DS22063B-page 6
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VDD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums. Parameters VS Amplifier PSRR Common Mode Input Range Closed-loop Voltage Gain Sym PSRR VCM A3VCL Min — GND — Typ 65 — 1 Max — AVDD — Units dB V V/V Conditions VIN = 3.0V to 5.0V, VCM = 1.2V Rail to Rail Input RL = 5 kΩ to VIN/2, 100 mV < VEAOUT < VIN - 100 mV, VCM = 1.2V RL = 5 kΩ to VIN/2
Low-level Output VS Amplifier Sink Current VS Amplifier Source Current Peak Current Sense Input (C1) Maximum Current Sense Signal MCP1631/MCP1631HV Maximum Ramp Signal MCP1631V/MCP1631VHV
VOL ISINK ISOURCE VCS_MAX VRAMP
— 1 -2 0.85 2.7
38 5 -5 0.9 2.78
GND + 85 — — 0.98 2.9
mV mA mA V V
VIN > 4V Maximum CS input range limited by comparator input common mode range. VCS_MAX = VIN-1.4V VIN = 5V Note 1 VFB = VREF + 0.1V, VCS = GND
Current Sense Input Bias Current Delay From CS to VEXT MCP1631 Minimum Duty Cycle
ICS_B TCS_VEXT DCMIN
— — —
-0.1 8.5 —
— 25 0
µA ns %
Overvoltage Sense Comparator (C2) OV Reference Voltage High OV Reference Voltage Low OV Hysteresis OV_IN Bias Current Delay From OV to VEXT OV Input Capacitance Input Operating Voltage Maximum Output Current Output Short Circuit Current OV_VREF_H OV_VREF_L OV_HYS OV_IBIAS TOV_VEXT C_OV VIN IOUT_mA IOUT_SC — 1.15 — — — — 3.5 250 — 1.23 1.18 50 0.001 63 5 — — 400 — 1.23 — 1 150 — 16.0 — — V V mV µA ns pF V mA mA VIN = VIN(MIN) (Note 2), VOUT = GND, Current (average current) measured 10 ms after short is applied. VR = 3.3V or 5.0V Note 3 Note 2 Delay from OV detection to PWM termination (Note 1) Overvoltage Comparator Hysteresis
Internal Regulator HV Options Input / Output Characteristics
Output Voltage Regulation VOUT Temperature Coefficient Note 1:
VOUT TCVOUT
VR-3.0% —
VR±0.4% 50
VR+3.0% 150
V ppm/ °C
2: 3: 4: 5:
External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and specified that are not production tested. The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)). TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater.
© 2008 Microchip Technology Inc.
DS22063B-page 7
MCP1631/HV/MCP1631V/VHV
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VDD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums. Parameters Line Regulation Sym ΔVOUT/ (VOUTXΔ VIN) ΔVOUT/ VOUT VDROPOUT TDELAY eN PSRR Min -0.3 Typ ±0.1 Max +0.3 Units %/V Conditions (VOUT(MAX) + VDROPOUT(MAX)) ≤ VIN ≤ 16V Note 2 IL = 1.0 mA to 250 mA, Note 4 IL = 250 mA, VR = 5.0V IL = 250 mA, VR = 3.3V VIN = 0V to 6V, VOUT = 90% VR, RL = 50Ω resistive
Load Regulation Dropout Voltage Note 2, Note 5 Output Delay Time Output Noise Power Supply Ripple Rejection Ratio
-2.5 — — — — —
±1.0 330 525 1000 8 44
+2.5 650 725 — — —
% mV mV µs
µV/ IL = 50 mA, f = 1 kHz, COUT = (Hz)1/2 1 µF dB f = 100 Hz, COUT = 1 µF, IL = 100 µA, VINAC =100 mV pk-pk, CIN = 0 µF, VR = 1.2V
Protection Features Thermal Shutdown Thermal Shutdown Hysteresis Note 1: TSHD TSHD_HYS — — 150 18 — — °C °C
2: 3: 4: 5:
External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and specified that are not production tested. The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)). TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater.
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise indicated, all limits are specified for: VIN + 3.0V to 5.5V Parameters Temperature Ranges Operating Junction Temperature Range Storage Temperature Range Maximum Junction Temperature Package Thermal Resistances Thermal Resistance, 20L-TSSOP Thermal Resistance, 20L-SSOP Thermal Resistance, 20L-QFN θJA θJA θJA — — — 90 89.3 43 — — — °C/W °C/W °C/W Typical 4 Layer board with interconnecting vias Typical 4 Layer board with interconnecting vias Typical 4 Layer board with interconnecting vias TJ TA TJ -40 -65 — — — — +125 +150 +150 °C °C °C Transient Steady State Sym Min Typ Max Units Conditions
DS22063B-page 8
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typical values = 5.0V, TA
for typical values = +25°C.
2.89 Undervoltage Lockout (V) 2.87 2.86 2.85 2.84 2.83 2.82 2.81 2.8 5 20 35 50 65 80 -40 -25 -10 95 110 125 Ambient Temperature (°C)
Device Turn Off
Shutdown Current (µA)
2.88
Device Turn On
4.00 3.70 3.40 3.10 2.80 2.50 2.20 1.90 1.60 1.30 1.00 -40
VDD = +5.5V VDD = +5.0V
VDD = +4.0V VDD = +3.3V
VDD = +3.0V
-25
-10
5
20
35
50
65
80
95
110 110 110
Ambient Temperature (°C)
FIGURE 2-1: Temperature.
0.068 0.067 UVLO Hyst (V) 0.066 0.065 0.064 0.063 0.062 0.061 -40 -25 -10
Undervoltage Lockout vs.
FIGURE 2-4: Shutdown Current vs. Temperature (MCP1631/MCP1631V).
1.60 1.50 1.40 1.30 1.20 1.10 1.00 -40 -25 -10 5 20 35 50 65 80 95 125 125
VDD = +3.3V VDD = +3.0V VDD = +4.0V VDD = +5.5V VDD = +5.0V
5
20
35
50
65
80
95
110
Ambient Temperature (°C)
125
OSC_IN Input Threshold (V)
Ambient Temperature (°C)
FIGURE 2-2: Undervoltage Lockout Hysteresis vs. Temperature.
Input Quiescent Current (mA) 4.00
FIGURE 2-5: vs. Temperature.
1.70 1.60 1.50 1.40 1.30 1.20 1.10 1.00 0.90 0.80 -40
Oscillator Input Threshold
OSC_DIS Input Threshold Voltage (V)
3.80 3.60 3.40 3.20 3.00 2.80 -40
VDD = +5.0V
VDD = +5.5V
VDD = +5.5V VDD = +5.0V
VDD = +4.0V VDD = +3.3V VDD = +3.0V
VDD = +4.0V VDD = +3.3V
VDD = +3.0V
-25
-10
5
20
35
50
65
80
-25
-10
110
125
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-3: Temperature.
Input Quiescent Current vs.
FIGURE 2-6: Oscillator Disable Input Threshold vs. Temperature.
© 2008 Microchip Technology Inc.
DS22063B-page 9
95
5
20
35
50
65
80
95
125
MCP1631/HV/MCP1631V/VHV
Typical Performance Curves (Continued)
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typical values = 5.0V, TA for typical values = +25°C.
DSON
14 VEXT Fall Time (ns) 12 10 8 6 4 -40 -25 -10 5 20 35 50 65 80 95 110 125
VDD = +5.5V VDD = +5.0V VDD = +4.0V VDD = +3.0V
VDD = +3.3V
5.0 4.7 4.4 4.1 3.8 3.5 3.2 2.9 2.6 2.3 2.0
CL = 100 pF
VDD = +3.3V VDD = +3.0V VDD = +4.0V VDD = +5.0V VDD = +5.5V
EXT Output P-Channel R (ohms)
5
20
35
50
65
80
-40
-25
-10
95
110 110 110
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-7: VEXT P-Channel Driver RDSON vs. Temperature.
6.6 6.2 5.8 5.4 5.0 4.6 4.2 3.8 3.4 3.0 -40 -25
FIGURE 2-10: Temperature.
-0.50 A1 Offset Voltage (mV)
VEXT Fall Time vs.
EXT Output N-Channel RDSON (ohms)
VDD = +3.3V VDD = +3.0V
-0.55 -0.60 -0.65 -0.70 -0.75 -0.80 5 20 35 50
VDD = +3.3V VDD = +4.0V VDD = +5.5V
VDD = +5.0V
VDD = +3.0V
VDD = +5.5V
VDD = +5.0V
VDD = +4.0V
-10
5
20
35
50
65
80
95
110
125
65
80
-40
-25
-10
95
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-8: VEXT N-Channel Driver RDSON vs. Temperature.
4.7 4.4 4.1 3.8 3.5 3.2 2.9 2.6 2.3 2.0
FIGURE 2-11: vs. Temperature.
40
Amplifier A1 Offset Voltage
CL = 100 pF
VEXT Rise Time (ns)
VDD = +3.3V
35 A1 V OUT Low (mV) 30 25 20 15 10 5 0
VDD = +3.0V
VDD = +5.5V
VDD = +3.0V
VDD = +5.0V VDD = +4.0V
VDD = +4.0V
VDD = +5.0V
VDD = +5.5V
VDD = +3.3V
-40
-25
-10
5
20
35
50
65
80
95
110
125
-40
-25
-10
5
20
35
50
65
80
95
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-9: Temperature.
VEXT Rise Time vs.
FIGURE 2-12: Amplifier A1 Output Voltage Low vs. Temperature.
DS22063B-page 10
© 2008 Microchip Technology Inc.
125
125
125
MCP1631/HV/MCP1631V/VHV
Typical Performance Curves (Continued)
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typical values = 5.0V, TA for typical values = +25°C.
18.8 17.6 16.4 15.2 14.0 12.8 11.6 10.4 9.2 8.0 -40 18 16 A2 V OUT Low (mV)
VDD = +3.0V VDD = +3.3V VDD = +4.0V VDD = +5.0V VDD = +5.5V VDD = +5.5V VDD = +5.0V VDD = +4.0V VDD = +3.3V VDD = +3.0V
A1 Sink Current (mA)
14 12 10 8 6
-25
-10
5
20
35
50
65
80
95
110
125
4 5 20 35 50 65 80 -40 -25 -10 Ambient Temperature (°C)
95
110
110
Ambient Temperature (°C)
FIGURE 2-13: vs. Temperature.
14.0 A1 Source Current (mA)
Amplifier A1 Sink Current
FIGURE 2-16: Amplifier A2 Output Voltage Low vs. Temperature.
40 A2 Sink Current (mA)
12.5 11.0 9.5 8.0 6.5 5.0 -40
VDD = +5.0V VDD = +4.0V VDD = +5.5V
35 30 25 20 15 10
-40 -25 -10 5 20 35 50 65 80 95
VDD = +3.0V VDD = +4.0V VDD = +5.0V VDD = +5.5V VDD = +3.3V
VDD = +3.3V VDD = +3.0V
-25
-10
5
20
35
50
65
80
95
110
125
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-14: vs. Temperature.
1.6 A2 Offset Voltage (mV) 1.4 1.2 1.0 0.8 0.6 0.4 5 -40 -25 -10
VDD = +3.3V
Amplifier A1 Source Current
FIGURE 2-17: vs. Temperature.
26 A2 Source Current (mA) 24 22 20 18 16 14 12 10 -40 -25 -10 5
Amplifier A2 Sink Current
VDD = +5.5V
VDD = +3.3V VDD = +5.0V VDD = +5.5V VDD = +3.0V
VDD = +5.0V VDD = +4.0V
VDD = +3.0V
20
35
50
65
80
95
20
35
50
65
80
110
125
95
110
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-15: vs. Temperature.
Amplifier A2 Offset Voltage
FIGURE 2-18: vs. Temperature.
Amplifier A2 Source Current
© 2008 Microchip Technology Inc.
DS22063B-page 11
125
125
125
MCP1631/HV/MCP1631V/VHV
Typical Performance Curves (Continued)
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typical values = 5.0V, TA for typical values = +25°C.
2.5 2 1.5 1 0.5 0 -40
VDD = +3.0V VDD = +4.0V
7.0 A3 Source Current (mA) 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 5 20 35 50 65 80 -40 -25 -10 95 110 110 Ambient Temperature (°C) 125
VDD = +3.0V VDD = +3.3V VDD = +4.0V VDD = +5.5V VDD = +5.0V
VDD = +5.5V
A3 Offset Voltage (mV)
VDD = +5.0V
VDD = +3.3V
-25
-10
5
20
35
50
65
80
95
110
Ambient Temperature (°C)
FIGURE 2-19: vs. Temperature.
70 A3 V OUT Low (mV) 60 50 40 30 20 10 0 -40 -25 -10 5
Amplifier A3 Offset Voltage
125
FIGURE 2-22: vs. Temperature.
0.920 0.918 0.916 0.914 0.912 0.910 0.908 0.906 0.904 0.902 0.900 -40 CS Max Threshold Voltage (V)
Amplifier A3 Source Current
VDD = +5.5V VDD = +5.0V VDD = +4.0V
VDD = +5.5V
VDD = +5.0V VDD = +4.0V
VDD = +3.0V
VDD = +3.3V
VDD = +3.3V
VDD = +3.0V
20
35
50
65
80
95
110
125
-25
-10
5
20
35
50
65
80
95
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-20: Amplifier A3 Output Voltage Low vs. Temperature.
6.8
FIGURE 2-23: MCP1631 and MCP1631HV CS Maximum Voltage (V) vs. Temperature.
2.790 2.788 2.786 2.784 2.782 2.780 2.778 2.776 2.774 2.772 2.770 -40
MCP1631V V RAMP Maximum Voltage (V)
A3 Sink Current (mA)
6.3 5.8 5.3 4.8 4.3 3.8 3.3 2.8 -40 -25 -10 5 20 35 50 65 80 95 110 125
VDD = +3.0V to +5.5V
VDD = +5.0V
-25
-10
5
20
35
50
65
80
95
110
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-21: vs. Temperature.
Amplifier A3 Sink Current
FIGURE 2-24: MCP1631V and MCP1631VHV VRAMP Max Voltage (V).
DS22063B-page 12
© 2008 Microchip Technology Inc.
125
125
MCP1631/HV/MCP1631V/VHV
Typical Performance Curves (Continued)
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typical values = 5.0V, TA for typical values = +25°C.
1.27 Shutdown Input Threshold Voltage (V) OV Threshold High (V) 1.26 1.25 1.24 1.23 1.22 1.21 1.2 -40 -25 -10 5 20 35 50 65 80 95 110 125
VDD = +3.3V VDD = +3.0V VDD = +5.5V VDD = +5.0V VDD = +4.0V
1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 -40 -25 -10 5 20 35 50 65 80 95 110 Ambinet Temperature (°C) 125
18
VDD = +3.0V VDD = +5.0V VDD = +4.0V VDD = +3.3V VDD = +5.5V
Ambient Temperature (°C)
FIGURE 2-25: Overvoltage Threshold High (V) vs. Temperature.
1.187 1.187 1.186 1.186 1.185 1.185 1.184 1.184 1.183 1.183 1.182 -40
FIGURE 2-28: Shutdown Input Voltage Threshold (V) vs. Temperature.
6.00 5.00 4.00
+130°C
HV LDO Quiescent Current (µA)
OV Threshold Low (V)
VDD = +3.0V VDD = +3.3V VDD = +4.0V
VOUT = 5.0V IOUT = 0 µA 0°C -45°C
3.00
+25°C
2.00 1.00 6 8 10 12
+90°C
VDD = +5.0V
VDD = +5.5V
-25
-10
20
35
50
65
80
95
110
125
14
16
5
Ambient Temperature (°C)
Input Voltage (V)
FIGURE 2-26: Overvoltage Threshold Low (V) vs. Temperature.
0.080
FIGURE 2-29: Input Voltage.
3.00 2.50 2.00 1.50 1.00 0.50 0.00 -45 -20
VOUT = 2.5V VIN = 3.5V
LDO Quiescent Current vs.
OV Threshold Hysteresis (V)
HV LDO Quiescent Current (µA)
0.070 0.060 0.050 0.040 0.030 0.020 0.010 0.000 -40 -25
VDD = +5.5V
VDD = +3.3V
VOUT = 1.2V VIN = 2.7V
IOUT = 0mA
VDD = +4.0V VDD = +3.0V VDD = +5.0V
VOUT = 5.0V VIN = 6.0V
-10
5
20
35
50
65
80
95
110
125
5
30
55
80
105
130
Ambient Temperature (°C)
Junction Temperature (°C)
FIGURE 2-27: Overvoltage Threshold Hysteresis (V) vs. Temperature.
FIGURE 2-30: LDO Quiescent Current vs. Junction Temperature.
© 2008 Microchip Technology Inc.
DS22063B-page 13
MCP1631/HV/MCP1631V/VHV
Typical Performance Curves (Continued)
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF, VIN for typical values = 5.0V, TA for typical values = +25°C.
5.06 Output Voltage (V) 5.04 5.02 5.00 4.98 4.96 4.94 4.92 0 50 100 150 200 250 Load Current (mA)
+25°C -45°C 0°C +130°C +90°C
Line Regulation (%/V)
VIN = 6V VOUT = 5.0V
0.18 0.16 0.14 0.12 0.10 0.08 0.06
VOUT = 5.0V VIN = 6.0V to 16.0V 200 mA 250 mA
0 mA 100 mA
-45
-20
5
30
55
80
105
130
Temperature (°C)
FIGURE 2-31: Load Current.
0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0
LDO Output Voltage vs.
FIGURE 2-34: Temperature.
0
LDO Line Regulation vs.
VOUT = 5.0V +130°C
-10 -20 PSRR (dB) -30 -40 -50 -60 -70 -80 -90 0.01
VR=5.0V VIN=6.0V VINAC = 100 mV p-p CIN=0 μF IOUT=100 µA
Dropout Voltage (V)
+90°C +25°C
+0°C -45°C
25
50
75 100 125 150 175 200 225 250 Load Current (mA)
0.1
1 10 Frequency (kHz)
100
1000
FIGURE 2-32: Load Current.
1.00 Load Regulation (%) 0.80 0.60 0.40 0.20 0.00 -0.20 -0.40 -45 -20 5
VIN = 8V VIN = 16V
LDO Dropout Voltage vs.
FIGURE 2-35:
LDO PSRR vs. Frequency.
VOUT = 5.0V IOUT = 1 to 250 mA
100
VR = 5.0V, VIN = 6.0V
IOUT = 50 mA
Noise (µV/ √Hz)
VIN = 6V VIN = 12V
10 1 0.1 0.01 0.001 0.01
VIN = 14V
30
55
80
105
130
0.1
Temperature (°C)
1 10 Frequency (kHz)
100
1000
FIGURE 2-33: Temperature.
LDO Load Regulation vs.
FIGURE 2-36: Frequency.
LDO Output Noise vs.
DS22063B-page 14
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
MCP1631HV/ MCP1631VHV TSSOP/SSOP 1 2 3 4 5 6 7 8,9 10 — 11 12 13 14 15 16 17 18 19 20
—
MCP1631/MCP1631V TSSOP/SSOP 1 2 3 4 5 6 7 8,9,10 — 11 — 12 13 14 15 16 17 18 19 20
—
4x4 QFN 15 16 17 18 19 20 1 2,4,12 — 3 — 5 6 7 8 9 10 11 13 14 21
Sym
Description
PGND SHDN OSCIN OSCDIS OVIN VREF AGND NC VIN AVDD_IN
Power ground return Shutdown input External oscillator input Oscillator disable input Overvoltage comparator input External voltage reference input Quiet or analog ground No connection High voltage input Analog bias voltage input
AVDD_OUT Regulated VDD output VSIN Voltage sense amplifier (A3) input ISIN VSOUT ISOUT COMP FB PVDD VEXT EP Current sense input Voltage sense amplifier output Current sense amplifier output Error amplifier (A1) output Error amplifier inverting input (A1) Power VDD input External driver output Exposed Thermal Pad (EP); must be connected to AGND
CS/VRAMP CS - current sense input; VRAMP voltage ramp input
3.1
Power Ground (PGND)
3.4
Oscillator Disable (OSCDIS)
Connect power ground return pin to power ground plane, high peak current flows through the PGND during the turn on and turn off the external MOSFET devices.
3.2
Shutdown Input (SHDN)
Oscillator disable input, used to asycnronously terminate the VEXT duty cycle. Commonly used to modulate current for LED driver applications.For minimum shutdown IQ, connect OSCDIS to SHDN.
Shutdown input logic low disables device and lowers IQ to minimum value, amplifier A3 (VS) remains functional for battery voltage sense applications.
3.5
Overvoltage Input (OVIN)
Overvoltage Comparator input, connect to voltage divider, internal comparator terminates VEXT output in 50 ns to limit output voltage to predetermined value.
3.3
Oscillator Input (OSCIN)
External Oscillator Input, used to set power train switching frequency and maximum duty cycle, VEXT enabled while low and disabled while high.
3.6
External Reference Voltage Input (VREF)
External Voltage Reference input, connect fixed or variable external reference to VREF, with A1 configured as an error amplifier, the power supply output variable (voltage or current) will follow this input.
© 2008 Microchip Technology Inc.
DS22063B-page 15
MCP1631/HV/MCP1631V/VHV
3.7 Analog Ground (AGND) 3.15 Current Sense Output (ISOUT)
Quiet or analog ground, connect to analog ground plane to minimize noise on sensitive MCP1631 circuitry. Current sense amplifier output, connect to error amplifier (A1) inverting input (FB) to regulate SEPIC output current.
3.8
No Connection (NC)
3.16
Error Amplifier Output (COMP)
No connection.
Error amplifier (A1) output, connect control loop compensation from FB input to COMP output pin.
3.9
Input Voltage (VIN)
High voltage input for MCP1631HV/MCP1631VHV devices, operates from 3.5V to 16V input supply.
3.17
Feedback (FB)
Error amplifier input (A1), connect to current sense output amplifier (A2) to regulate current.
3.10
Analog supply Input (AVDD_IN)
Analog bias input, minimum 3.0V to 5.5V operation for MCP1631/MCP1631V devices.
3.18
Current Sense or Voltage Ramp (CS/VRAMP)
3.11
Analog Supply Output (AVDD_OUT)
Regulated VDD output used to power internal MCP1631HV/MCP1631VHV and external microcontroller, supplies up to 250 ma of bias current at 3.3V or 5.0V regulated low drop out rail.
For MCP1631/MCP1631HV applications, connect to low side current sense of SEPIC switch for current mode control and peak current limit. For MCP1631/ MCP1631HV application, connect artificial ramp voltage to VRAMP input for voltage mode PWM control.
3.19
Power VDD (PVDD)
3.12
Voltage Sense Input (VSIN)
Voltage sense amplifier (A3) input, connect to high impedance battery voltage resistor divider to sense battery voltage with minimal loading.
Power VDD input, VEXT gate drive supply input, connect to +5.0V or +3.3V supply for driving external MOSFET.
3.20
External Driver (VEXT)
3.13
Current Sense Input (ISIN)
High current driver output used to drive external MOSFET at high frequency, capable of 1A peak currents with +5.0V PVDD.
Connect to SEPIC secondary side sense resistor to develop a regulated current source used to charge multi-chemistry batteries.
3.21
Exposed PAD 4x4 QFN (EP)
3.14
Voltage Sense Output (VSOUT)
Voltage sense amplifier output, connect to microcontroller analog to digital converter to measure battery voltage.
There is an internal electrical connection between the Exposed Thermal Pad (EP) and the AGND pin; they must be connected to the same potential on the Printed Circuit Board (PCB).
DS22063B-page 16
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
4.0
4.1
DETAILED DESCRIPTION
Device Overview
4.4
Current Sense Amplifier (A2)
The MCP1631/MCP1631V device family combines the analog functions to develop high frequency switch mode power systems while integrating features for battery charger and LED current source applications. With the integration of a MOSFET driver, voltage sense, current sense and over voltage protection, the MCP1631/MCP1631V is a highly integrated, highspeed analog pulse width modulator. The MCP1631/MCP1631V output (VEXT) is used to control the switch of the power system (on and off time). By controlling the switch on and off time, the power system output can be regulated. With the oscillator and reference voltage as inputs, a simple interface to a microcontroller is available with the MCP1631/MCP1631V to develop intelligent power systems. A good example of an intelligent power system is a battery charger, programmable LED driver current source or programmable power supply. The MCP1631/MCP1631V is a combination of specialty analog blocks consisting of a Pulse Width Modulator (PWM), MOSFET Driver, Current Sense Amplifier (A2), Voltage Sense Amplifier (A3), Overvoltage Comparator (C2) and additional features (Shutdown, Undervoltage Lockout, Overtemperature Protection). For the HV options, an internal low dropout regulator is integrated for operation from high voltage inputs (MCP1631HV/MCP1631VHV).
The A2 current sense amplifier is used to sense current in the secondary side of a SEPIC converter or freewheeling current in a Buck converter. The inverting amplifier has a built in voltage gain of ten with low offset and high speed.
4.5
Voltage Sense Amplifier (A3)
The A3 voltage sense amplifier is used to sense battery voltage. In battery powered applications, it is important to minimize the steady stage load current draw on the battery. The voltage sense amplifier (A3) is used to buffer a high impedance series divider used to reduce the battery pack voltage to a level that can be read using an analog to digital converter. The voltage sense amplifier draws a very low quiescent current and remains functional when the MCP1631/MCP1631V is shutdown making it possible to read battery voltage without turning on the charger.
4.6
Overvoltage Comparator(C2)
The C2 overvoltage comparator is used to prevent the power system from being damaged when the load (battery) is disconnected. By comparing the divided down power train output voltage with a 1.2V internal reference voltage, the MCP1631/MCP1631V VEXT output switching is interrupted when the output voltage is above a pre-set value. This limits the output voltage of the power train, the 0V comparator’s hysteresis will operate as a ripple regulator.
4.2
Pulse Width Modulator (PWM)
4.7
Shutdown Input
The internal PWM of the MCP1631/MCP1631V is comprised of an error amplifier, high-speed comparator and latch. The output of the amplifier is compared to either the MCP1631 CS (primary current sense input) or the MCP1631V VRAMP (voltage mode ramp input) of the high speed comparator. When the CS or VRAMP signal reach the level of the error amplifier output, the on cycle is terminated and the external switch is latched off until the beginning of the next cycle (high to low transition of OSCIN).
The MCP1631/MCP1631V shutdown feature is used to disable the device with the exception of the voltage sense amplifier A3 to minimize quiescent current draw. While shutdown, A3 remains operational while the device draws 4.4 µA from the input.
4.8
Protection
4.3
VEXT MOSFET Driver
The MCP1631/MCP1631V output can be used to drive the external MOSFET directly for low side topology applications. The VEXT is capable of sourcing up to 700 mA and sinking up to 1A of current from a PVDD source of 5V. Typical output power using the VEXT output to directly drive the external MOSFET can exceed 50W depending upon application and switching frequency.
The MCP1631/MCP1631V has built in Undervoltage Lockout (UVLO) that ensures the output VEXT pin is forced to a known state (low) when the input voltage or AVDD is below the specified value. This prevents the main MOSFET switch from being turned on during a power up or down sequence. The MCP1631/MCP1631V provides a thermal shutdown protection feature, if the internal junction temperature of the device becomes high, the overtemperature protection feature will disable (pull the VEXT output low) and shut down the power train.
© 2008 Microchip Technology Inc.
DS22063B-page 17
MCP1631/HV/MCP1631V/VHV
NOTES:
DS22063B-page 18
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
5.0
5.1
APPLICATION INFORMATION
Typical Applications
inductors has significant advantages in addition to the size and cost benefits of a single core with multiple windings.
The MCP1631/MCP1631V can be used to develop intelligent power management solutions, typical applications include a multi-chemistry battery charger used to charge Li-Ion, NiMH or NiCd batteries and constant current LED drivers.
5.4
Mixed Signal Design
5.2
Battery Charger Design Overview
The design approach for developing high current switching battery chargers using the MCP1631 is described in this section. Depending on input voltage range, there are two versions of the device that can be used to accommodate a very wide range of input voltages. For a regulated input voltage range of 5V, the MCP1631/MCP1631V device is used, for this input voltage application (regulated ac-dc converter or USB input), the MCP1631/MCP1631V is powered directly from the 5V dc input. For input voltages to +16V steady state with +18V transients, the MCP1631HV/MCP1631VHV, or high voltage option can be used. The high voltage devices integrate a low dropout (LDO) linear regulator with a set output voltage of +3.3V or +5.0V that internally powers the MCP1631HV/MCP1631VHV and is also capable of providing 250 mA of bias current for the attached microcontroller and other circuitry. MCP1631HV/ MCP1631VHV internal power dissipation must be considered when loading the internal LDO regulator. For higher input voltages the MCP1631/MCP1631V can be biased from an external regulated +3.0V to +5.5V supply.
For intelligent battery charger design, a microcontroller is used to generate the proper charge profile, charge termination, safety timers and battery charger features. When using the MCP1631/MCP1631V for Li-Ion battery charger applications, the microcontroller is also used to generate the constant voltage regulation phase of the charge cycle. This is accomplished by using the external reference feature of the MCP1631/MCP1631V as a programmable current source. The microcontroller is used to vary the VREF input of the MCP1631/ MCP1631V. The charge current into the battery is regulated by the MCP1631/MCP1631V, the level that it is regulated to is set by the programmability of the microcontroller. The internal MCP1631/MCP1631V analog components are used to regulate the microcontroller programmed current. The secondary or battery current is sensed using amplifier A2, the output of A2 is feed into the input of the error amplifier A1, the output of A1 sets the peak switch current of the SEPIC converter, it increases or decreases the battery current to match its (A1) inputs. By increasing the VREF or non-inverting input of A1, the battery current is increased.
5.5
Safety Features
5.3
Programmable Single Ended Primary Inductive (SEPIC) Current Source
The MCP1631/MCP1631V integrates a high-speed comparator used to protect the charger and battery from being exposed to high voltages if the battery is removed or opens. Comparator C2 is used to sense the SEPIC output voltage. If the divided down output voltage becomes higher than the 1.2V internal MCP1631/MCP1631V reference, the VEXT PWM output is terminated within 50 ns preventing the build up of voltage on the SEPIC output. Peak switch current is limited by the MCP1631/ MCP1631V comparator C1 and error amplifier A1 output voltage clamp. For the MCP1631, the error amplifier output is clamped at 2.7V. The A1 output is divided down by 1/3 and compared with CS (current sense) input. The VEXT output is turned off if the CS input reaches a level of 1/3 of 2.7V or 0.9V in 12 ns, preventing the external switch current from becoming high enough to damage the SEPIC power train. Internal overtemperature protection limits the device junction temperature to 150°C preventing catastrophic failure for overtemperature conditions. Once the temperature decreases 10°C, the device will resume normal operation. Safety timers are typically used to limit the amount of energy into a faulted battery or pack. This is accomplished using the microcontroller and MCP1631/ MCP1631V shutdown feature.
The MCP1631/MCP1631V family integrates features that are necessary to develop programmable current sources. The SEPIC converter is commonly used in battery charger applications. The primary or input inductor is used to filter input current and minimize the switching noise at the converter input. The primary to secondary capacitive isolation blocks any dc path from input to output making the SEPIC safer than Buck or other non-isolated topologies. The SEPIC rectifier blocks the reverse path preventing battery leakage, in other topologies an additional diode for blocking is necessary adding additional components and efficiency loss. The input or primary inductor and output or secondary inductor are typically constructed from a single magnetic device with two windings, this is commonly referred to as a coupled inductor. Using coupled
© 2008 Microchip Technology Inc.
DS22063B-page 19
MCP1631/HV/MCP1631V/VHV
5.6 OSC Disable Feature
The oscillator disable or OSC_DIS input is used to asychronously terminate the PWM VEXT output. This can be used with a slow PWM input to modulate current into an LED for lighting applications.
Multi-cell Multi-Chemistry Charger VIN Range +4.5V to +5.5V CIN MCP1631 NC AVDD_IN PVDD OSCIN ISOUT NC FB NC COMP AGND VEXT CS PGND ISIN OVIN VSIN VREF SHDN OSCDIS VSOUT L1B L1A CC SCHOTTKY DIODE COUT RTHERM
R PIC12F683 VDD CCP1 GP4 GND GP1/C GP3 GP5 GP0/C
C
AVDD_OUT
FIGURE 5-1:
DS22063B-page 20
LED
+5V ac-dc or USB Input Application.
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
Multi-cell Multi-Chemistry Charger VIN Range +5.5V to +16V CIN MCP1631HV VIN AVDD_OUT PVDD OSCIN ISOUT NC FB NC COMP AGND VEXT CS PGND ISIN OVIN VSIN VREF SHDN OSCDIS VSOUT L1B L1A CC SCHOTTKY DIODE COUT RTHERM
R PIC12F683 VDD CCP1 GP4 GND GP1/C GP3 GP5 GP0/C
C
AVDD_OUT
FIGURE 5-2:
© 2008 Microchip Technology Inc.
LED
+5.5V to +16.0V Input.
DS22063B-page 21
MCP1631/HV/MCP1631V/VHV
Multi-cell Multi-Chemistry Charger VIN Range +6V to +40V CIN +5V HV Regulator COUT NC AVDD_IN PVDD OSCIN ISOUT NC FB NC COMP AGND L1A CC SCHOTTKY DIODE COUT MCP1631 VEXT CS PGND ISIN OVIN VSIN VREF SHDN OSCDIS VSOUT L1B RTHERM
R PIC12F683 VDD CCP1 GP4 GND GP1/C GP3 GP5 GP0/C
C
AVDD_OUT
FIGURE 5-3:
DS22063B-page 22
LED
Wide Range High Voltage Input.
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
6.0
6.1
PACKAGING INFORMATION
Package Marking Information (Not to Scale)
20-Lead 4x4 QFN (MCP1631/MCP1631V) Example:
XXXXX XXXXXX XXXXXX YWWNNN
1631 e3 E/ML^^ 0822 256
20-Lead SSOP (All Devices)
Example:
XXXXXXXXXXX XXXXXXXXXXX YYWWNNN
1631V e3 EST^^ 0822256
20-Lead TSSOP (All Devices)
Example:
XXXXXXXX XXXXXNNN YYWW
1631HV33 e3 EST^^256 0822
Legend: XX...X Y YY WW NNN
e3
* Note:
Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.
© 2008 Microchip Technology Inc.
DS22063B-page 23
MCP1631/HV/MCP1631V/VHV
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DS22063B-page 24
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
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MCP1631/HV/MCP1631V/VHV
NOTES:
DS22063B-page 28
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
APPENDIX A: REVISION HISTORY
Revision B (October 2008)
The following is the list of modifications: 1. Section 2.0 “Typical Performance Curves”, Input Offset Voltage: changed minimum, typical, maximum from -0.6, -, +0.6 to -5, -0.6, +5, respectively; Updated Section 6.0 “Packaging Information”; Updated the Product Identification System.
2. 3.
Revision A (October 2007)
• Original Release of this Document.
© 2008 Microchip Technology Inc.
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NOTES:
DS22063B-page 30
© 2008 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device -XXX X /XX Package Examples:
a) b)
Device MCP1631: MCP1631T: High-Speed PWM High-Speed PWM Tape and Reel MCP1631HV: High-Speed PWM MCP1631HVT: High-Speed PWM Tape and Reel MCP1631HV: High-Speed PWM MCP1631HVT: High-Speed PWM Tape and Reel MCP1631VHV: High-Speed PWM MCP1631VHVT: High-Speed PWM Tape and Reel 330 500 E ML SS ST = = = 3.3V 5.0V -40°C to +125°C
Voltage Temperature Options Range
MCP1631-E/ML: MCP1631-E/SS: MCP1631-E/ST:
c)
High-Speed PWM, 20LD QFN package. High-Speed PWM, 20LD SSOP package. High-Speed PWM, 20LD TSSOP package.
a)
b)
Voltage options
c)
Temperature Range Package
MCP1631HV-330E/SS:High Speed PWM, Current Mode Control, 3.3V Internal Regulator, 20LD SSOP Package. MCP1631HV-500E/SS: High Speed PWM, Current Mode Control, 5.0V Internal Regulator, 20LD SSOP Package. MCP1631HV-500E/ST:High Speed PWM, Current Mode Control, 5.0V Internal Regulator, 20LD TSSOP Package. MCP1631VHVT-500E/ST:High Speed PWM, Voltage Mode Control, 5.0V Internal Regulator, 20LD TSSOP Package. MCP1631VHV-330E/SS: High Speed PWM, Voltage Mode Control, 3.3V Internal Regulator, 20LD SSOP Package. MCP1631VHV-330E/ST:High Speed PWM, Voltage Mode Control, 3.3V Internal Regulator, 20LD TSSOP Package.
a)
= Plastic Quad Flat, No Lead (4x4x0.9), 20-lead = Plastic Shrink Small Outline (5.30 mm), 20-lead = Plastic Thin Shrink Small Outline (4.4 mm), 20-Lead
* All package offerings are Pb Free (Lead Free)
b)
c)
© 2008 Microchip Technology Inc.
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NOTES:
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© 2008 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices: • • • Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.”
• •
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights.
Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, rfPIC, SmartShunt and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, PICkit, PICDEM, PICDEM.net, PICtail, PIC32 logo, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total Endurance, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2008, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.
© 2008 Microchip Technology Inc.
DS22063B-page 33
WORLDWIDE SALES AND SERVICE
AMERICAS
Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://support.microchip.com Web Address: www.microchip.com Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Farmington Hills, MI Tel: 248-538-2250 Fax: 248-538-2260 Kokomo Kokomo, IN Tel: 765-864-8360 Fax: 765-864-8387 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Santa Clara Santa Clara, CA Tel: 408-961-6444 Fax: 408-961-6445 Toronto Mississauga, Ontario, Canada Tel: 905-673-0699 Fax: 905-673-6509
ASIA/PACIFIC
Asia Pacific Office Suites 3707-14, 37th Floor Tower 6, The Gateway Harbour City, Kowloon Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8528-2100 Fax: 86-10-8528-2104 China - Chengdu Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 China - Hong Kong SAR Tel: 852-2401-1200 Fax: 852-2401-3431 China - Nanjing Tel: 86-25-8473-2460 Fax: 86-25-8473-2470 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 China - Shanghai Tel: 86-21-5407-5533 Fax: 86-21-5407-5066 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 China - Shenzhen Tel: 86-755-8203-2660 Fax: 86-755-8203-1760 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 China - Xiamen Tel: 86-592-2388138 Fax: 86-592-2388130 China - Xian Tel: 86-29-8833-7252 Fax: 86-29-8833-7256 China - Zhuhai Tel: 86-756-3210040 Fax: 86-756-3210049
ASIA/PACIFIC
India - Bangalore Tel: 91-80-4182-8400 Fax: 91-80-4182-8422 India - New Delhi Tel: 91-11-4160-8631 Fax: 91-11-4160-8632 India - Pune Tel: 91-20-2566-1512 Fax: 91-20-2566-1513 Japan - Yokohama Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Korea - Daegu Tel: 82-53-744-4301 Fax: 82-53-744-4302 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 Malaysia - Kuala Lumpur Tel: 60-3-6201-9857 Fax: 60-3-6201-9859 Malaysia - Penang Tel: 60-4-227-8870 Fax: 60-4-227-4068 Philippines - Manila Tel: 63-2-634-9065 Fax: 63-2-634-9069 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan - Hsin Chu Tel: 886-3-572-9526 Fax: 886-3-572-6459 Taiwan - Kaohsiung Tel: 886-7-536-4818 Fax: 886-7-536-4803 Taiwan - Taipei Tel: 886-2-2500-6610 Fax: 886-2-2508-0102 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350
EUROPE
Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 UK - Wokingham Tel: 44-118-921-5869 Fax: 44-118-921-5820
01/02/08
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© 2008 Microchip Technology Inc.
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