MCP1700T-3002ETO

MCP1700 Low Quiescent Current LDO Features • • • • • • • • • • • 1.6 µA Typical Quiescent Current Input Operating Voltage Range: 2.3V to 6.0V Output Voltage Range: 1.2V to 5.0V 250 mA Output Current for output voltages ≥ 2.5V 200 mA Output Current for output voltages < 2.5V Low Dropout (LDO) voltage - 178 mV typical @ 250 mA for VOUT = 2.8V 0.4% Typical Output Voltage Tolerance Standard Output Voltage Options: - 1.2V, 1.8V, 2.5V, 3.0V, 3.3V, 5.0V Stable with 1.0 µF Ceramic Output capacitor Short Circuit Protection Overtemperature Protection General Description The MCP1700 is a family of CMOS low dropout (LDO) voltage regulators that can deliver up to 250 mA of current while consuming only 1.6 µA of quiescent current (typical). The input operating range is specified from 2.3V to 6.0V, making it an ideal choice for two and three primary cell battery-powered applications, as well as single cell Li-Ion-powered applications. The MCP1700 is capable of delivering 250 mA with only 178 mV of input to output voltage differential (VOUT = 2.8V). The output voltage tolerance of the MCP1700 is typically ±0.4% at +25°C and ±3% maximum over the operating junction temperature range of -40°C to +125°C. Output voltages available for the MCP1700 range from 1.2V to 5.0V. The LDO output is stable when using only 1 µF output capacitance. Ceramic, tantalum or aluminum electrolytic capacitors can all be used for input and output. Overcurrent limit and overtemperature shutdown provide a robust solution for any application. Package options include the SOT-23, SOT-89 and TO-92. Applications • • • • • • • • • • Battery-powered Devices Battery-powered Alarm Circuits Smoke Detectors CO2 Detectors Pagers and Cellular Phones Smart Battery Packs Low Quiescent Current Voltage Reference PDAs Digital Cameras Microcontroller Power Package Types 3-Pin SOT-23 VIN 3 MCP1700 1 2 MCP1700 1 2 3 GND VIN VOUT 3-Pin SOT-89 VIN 3-Pin TO-92 MCP1700 123 Related Literature • AN765, “Using Microchip’s Micropower LDOs”, DS00765, Microchip Technology Inc., 2002 • AN766, “Pin-Compatible CMOS Upgrades to BiPolar LDOs”, DS00766, Microchip Technology Inc., 2002 • AN792, “A Method to Determine How Much Power a SOT23 Can Dissipate in an Application”, DS00792, Microchip Technology Inc., 2001 GND VOUT GND VIN VOUT © 2007 Microchip Technology Inc. DS21826B-page 1 MCP1700 Functional Block Diagrams MCP1700 VIN VOUT Error Amplifier +VIN Voltage Reference + Over Current Over Temperature GND Typical Application Circuits MCP1700 GND VOUT 1.8V IOUT 150 mA VIN VOUT COUT 1 µF Ceramic VIN (2.3V to 3.2V) CIN 1 µF Ceramic DS21826B-page 2 © 2007 Microchip Technology Inc. MCP1700 1.0 ELECTRICAL CHARACTERISTICS † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings † VDD ............................................................................................+6.5V All inputs and outputs w.r.t. .............(VSS-0.3V) to (VIN+0.3V) Peak Output Current .................................... Internally Limited Storage temperature .....................................-65°C to +150°C Maximum Junction Temperature ................................... 150°C Operating Junction Temperature...................-40°C to +125°C ESD protection on all pins (HBM;MM)............... ≥ 4 kV; ≥ 400V DC CHARACTERISTICS Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1, ILOAD = 100 µA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C. Boldface type applies for junction temperatures, TJ (Note 6) of -40°C to +125°C. Parameters Input / Output Characteristics Input Operating Voltage Input Quiescent Current Maximum Output Current Output Short Circuit Current VIN Iq IOUT_mA IOUT_SC 2.3 — 250 200 — — 1.6 — — 408 6.0 4 — — — V µA mA mA Note 1 IL = 0 mA, VIN = VR +1V For VR ≥ 2.5V For VR < 2.5V VIN = VR + V, VOUT = GND, Current (peak current) measured 10 ms after short is applied. Note 2 Note 3 (VR+1)V ≤ VIN ≤ 6V IL = 0.1 mA to 250 mA for VR ≥ 2.5V IL = 0.1 mA to 200 mA for VR < 2.5V Note 4 IL = 250 mA, (Note 1, Note 5) IL = 200 mA, (Note 1, Note 5) 10% VR to 90% VR VIN = 0V to 6V, RL = 50Ω resistive Sym Min Typ Max Units Conditions Output Voltage Regulation VOUT Temperature Coefficient Line Regulation Load Regulation VOUT TCVOUT ΔVOUT/ (VOUTXΔVIN) VR-3.0% VR-2.0% — -1.0 -1.5 VR±0.4 % 50 ±0.75 ±1.0 VR+3.0% VR+2.0% — +1.0 +1.5 V ppm/°C %/V % ΔVOUT/VOUT VIN-VOUT VIN-VOUT TR eN Dropout Voltage VR > 2.5V Dropout Voltage VR < 2.5V Output Rise Time Output Noise Note 1: 2: 3: 4: 5: 6: — — — — 178 150 500 3 350 350 — — mV mV µs µV/(Hz)1/2 IL = 100 mA, f = 1 kHz, COUT = 1 µF 7: The minimum VIN must meet two conditions: VIN ≥ 2.3V and VIN ≥ (VR + 3.0%) +VDROPOUT. VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The input voltage (VIN = VR + 1.0V); IOUT = 100 µA. TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with a VR + 1V differential applied. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained junction temperatures above 150°C can impact the device reliability. The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the ambient temperature is not significant. © 2007 Microchip Technology Inc. DS21826B-page 3 MCP1700 DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1, ILOAD = 100 µA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C. Boldface type applies for junction temperatures, TJ (Note 6) of -40°C to +125°C. Parameters Power Supply Ripple Rejection Ratio Thermal Shutdown Protection Note 1: 2: 3: 4: 5: 6: Sym PSRR Min — Typ 44 Max — Units dB Conditions f = 100 Hz, COUT = 1 µF, IL = 50 mA, VINAC = 100 mV pk-pk, CIN = 0 µF, VR = 1.2V VIN = VR + 1, IL = 100 µA TSD — 140 — °C 7: The minimum VIN must meet two conditions: VIN ≥ 2.3V and VIN ≥ (VR + 3.0%) +VDROPOUT. VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The input voltage (VIN = VR + 1.0V); IOUT = 100 µA. TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with a VR + 1V differential applied. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained junction temperatures above 150°C can impact the device reliability. The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the ambient temperature is not significant. TEMPERATURE SPECIFICATIONS Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1, ILOAD = 100 µA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C. Boldface type applies for junction temperatures, TJ (Note 1) of -40°C to +125°C. Parameters Temperature Ranges Specified Temperature Range Operating Temperature Range Storage Temperature Range Thermal Package Resistance Thermal Resistance, SOT-23 θJA θJA θJA — — Thermal Resistance, SOT-89 Thermal Resistance, TO-92 Note 1: — — 336 230 52 131.9 — — — — °C/W °C/W °C/W °C/W Minimum Trace Width Single Layer Board Typical FR4 4-layer Application Typical, 1 square inch of copper EIA/JEDEC JESD51-751-7 4-Layer Board TA TA TA -40 -40 -65 +125 +125 +150 °C °C °C Sym Min Typ Max Units Conditions The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained junction temperatures above 150°C can impact the device reliability. DS21826B-page 4 © 2007 Microchip Technology Inc. MCP1700 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA, TA = +25°C, VIN = VR + V. Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant. 3.0 1.206 Quiescent Current (µA) 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 VR = 1.2V IOUT = 0 µA TJ = +125°C 1.204 TJ = +125°C VR = 1.2V IOUT = 0.1 mA Output Voltage (V) 1.202 1.200 1.198 1.196 1.194 1.192 1.190 TJ = - 40°C TJ = +25°C TJ = - 40°C TJ = +25°C 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2 2.5 3 3.5 4 4.5 5 5.5 6 Input Voltage (V) Input Voltage (V) FIGURE 2-1: Input Voltage. 50 45 Input Quiescent Current vs. FIGURE 2-4: Output Voltage vs. Input Voltage (VR = 1.2V). 1.8 VR = 1.8V IOUT = 0.1 mA VR = 2.8V TJ = +25°C TJ = +125°C Ground Current (µA) 35 30 25 20 15 10 5 0 0 25 50 Output Voltage (V) 40 1.795 1.79 TJ = - 40°C 1.785 1.78 1.775 1.77 TJ = - 40°C TJ = +125°C TJ = +25°C 75 100 125 150 175 200 225 250 2 2.5 3 3.5 4 4.5 5 5.5 6 Load Current (mA) Input Voltage (V) FIGURE 2-2: Current. 2.50 Ground Current vs. Load FIGURE 2-5: Output Voltage vs. Input Voltage (VR = 1.8V). 2.800 2.798 2.796 2.794 2.792 2.790 2.788 2.786 2.784 2.782 2.780 2.778 TJ = +125°C TJ = - 40°C TJ = +25°C VR = 2.8V IOUT = 0.1 mA Quiscent Current (µA) VR = 5.0V 2.00 1.75 1.50 1.25 -40 -25 -10 5 20 35 50 65 80 95 110 125 VR = 1.2V VR = 2.8V Output Voltage (V) 2.25 VIN = VR + 1V IOUT = 0 µA 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6 Junction Temperature (°C) Input Voltage (V) FIGURE 2-3: Quiescent Current vs. Junction Temperature. FIGURE 2-6: Output Voltage vs. Input Voltage (VR = 2.8V). © 2007 Microchip Technology Inc. DS21826B-page 5 MCP1700 Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA, TA = +25°C, VIN = VR +1V. 5.000 4.995 VR = 5.0V IOUT = 0.1 mA TJ = +25°C 2.798 2.796 2.794 2.792 2.790 2.788 2.786 2.784 2.782 2.780 2.778 5 5.2 5.4 5.6 5.8 6 0 50 100 150 200 250 TJ = +125°C TJ = - 40°C TJ = +25°C VR = 2.8V VIN = VR + 1V Output Voltage (V) 4.990 4.985 4.980 4.975 4.970 4.965 4.960 4.955 TJ = +125°C TJ = - 40°C Input Voltage (V) Output Voltage (V) Load Current (mA) FIGURE 2-7: Output Voltage vs. Input Voltage (VR = 5.0V). 1.21 1.20 1.19 1.18 1.17 1.16 1.15 0 25 50 75 100 125 150 175 200 TJ = +125°C TJ = +25°C TJ = - 40°C VR = 1.2V VIN = VR + 1V FIGURE 2-10: Output Voltage vs. Load Current (VR = 2.8V). 5.000 4.995 TJ = +25°C TJ = - 40°C VR = 5.0V VIN = VR + 1V TJ = +125°C Output Voltage (V) Output Voltage (V) 4.990 4.985 4.980 4.975 4.970 4.965 4.960 4.955 0 50 100 150 200 250 Load Curent (mA) Load Current (mA) FIGURE 2-8: Output Voltage vs. Load Current (VR = 1.2V). 1.792 1.790 FIGURE 2-11: Output Voltage vs. Load Current (VR = 5.0V). 0.25 VR = 2.8V Dropout Votage (V) TJ = +25°C TJ = - 40°C TJ = +125°C 0.2 Output Voltage (V) 1.788 1.786 1.784 1.782 1.780 1.778 0 TJ = +125°C TJ = +25°C 0.15 0.1 TJ = - 40°C 0.05 VR = 1.8V VIN = VR + 1V 25 50 75 100 125 150 175 200 0 0 25 50 75 100 125 150 175 200 225 250 Load Current (mA) Load Current (mA) FIGURE 2-9: Output Voltage vs. Load Current (VR = 1.8V). FIGURE 2-12: Dropout Voltage vs. Load Current (VR = 2.8V). DS21826B-page 6 © 2007 Microchip Technology Inc. MCP1700 Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA, TA = +25°C, VIN = VR +1V. 0.16 0.14 10 VR = 5.0V Dropout Voltage (V) Noise (µV/ √Hz) 0.12 0.1 0.08 0.06 0.04 0.02 0 0 25 50 75 100 125 TJ = +125°C TJ = +25°C VIN = 3.8V VR = 2.8V IOUT = 50ma VIN = 2.5V VR = 1.2V IOUT = 50ma VIN = 2.8V VR = 1.8V IOUT = 50ma 1 0.1 TJ = - 40°C 150 175 200 225 250 0.01 0.01 0.1 1 10 100 1000 Load Current (mA) Frequency (KHz) FIGURE 2-13: Dropout Voltage vs. Load Current (VR = 5.0V). FIGURE 2-16: Noise vs. Frequency. FIGURE 2-14: Power Supply Ripple Rejection vs. Frequency (VR = 1.2V). FIGURE 2-17: (VR = 1.2V). Dynamic Load Step FIGURE 2-15: Power Supply Ripple Rejection vs. Frequency (VR = 2.8V). FIGURE 2-18: (VR = 1.8V). Dynamic Load Step © 2007 Microchip Technology Inc. DS21826B-page 7 MCP1700 Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = µF Ceramic (X7R), IL = 100 µA, TA = +25°C, VIN = VR +1V. FIGURE 2-19: (VR = 2.8V). Dynamic Load Step FIGURE 2-22: (VR = 5.0V). Dynamic Load Step FIGURE 2-20: (VR = 1.8V). Dynamic Load Step FIGURE 2-23: (VR = 2.8V). Dynamic Line Step FIGURE 2-21: (VR = 2.8V). Dynamic Load Step FIGURE 2-24: (VR = 1.2V). Startup From VIN DS21826B-page 8 © 2007 Microchip Technology Inc. MCP1700 Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA, TA = +25°C, VIN = VR +1V. 0 Load Regulation (%) -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -40 VIN = 5.0V VIN = 4.3V VR = 2.8V IOUT = 0 to 250 mA VIN = 3.3V -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (°C) FIGURE 2-25: (VR = 1.8V). Start-up From VIN FIGURE 2-28: Load Regulation vs. Junction Temperature (VR = 2.8V). 0.1 VR = 5.0V IOUT = 0 to 250 mA VIN = 6.0V Load Regulation (%) 0.05 0 -0.05 -0.1 -0.15 -0.2 -40 VIN = 5.5V -25 -10 5 20 35 50 65 80 95 110 125 Junction Temperature (°C) FIGURE 2-26: (VR = 2.8V). 0.3 Start-up From VIN FIGURE 2-29: Load Regulation vs. Junction Temperature (VR = 5.0V). 0.1 Line Regulation (%/V) Load Regulation (%) 0.2 0.1 0 -0.1 -0.2 -0.3 -0.4 -40 VIN = 5.0V VIN = 3.5V VR = 1.8V IOUT = 0 to 200 mA 0.05 0 -0.05 -0.1 -0.15 -0.2 -0.25 -0.3 -40 -25 -10 5 VR = 1.2V VR = 1.8V VR = 2.8V VIN = 2.2V -25 -10 5 20 35 50 65 80 95 110 125 20 35 50 65 80 95 110 125 Junction Temperature (°C) Junction Temperature (°C) FIGURE 2-27: Load Regulation vs. Junction Temperature (VR = 1.8V). FIGURE 2-30: Line Regulation vs. Temperature (VR = 1.2V, 1.8V, 2.8V). © 2007 Microchip Technology Inc. DS21826B-page 9 MCP1700 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: Pin No. SOT-23 1 2 3 PIN FUNCTION TABLE Pin No. SOT-89 1 3 2 Pin No. TO-92 1 3 2 Name GND VOUT VIN Ground Terminal Regulated Voltage Output Unregulated Supply Voltage Function 3.1 Ground Terminal (GND) 3.3 Regulator ground. Tie GND to the negative side of the output and the negative side of the input capacitor. Only the LDO bias current (1.6 µA typical) flows out of this pin; there is no high current. The LDO output regulation is referenced to this pin. Minimize voltage drops between this pin and the negative side of the load. Unregulated Input Voltage Pin (VIN) 3.2 Regulated Output Voltage (VOUT) Connect VOUT to the positive side of the load and the positive terminal of the output capacitor. The positive side of the output capacitor should be physically located as close to the LDO VOUT pin as is practical. The current flowing out of this pin is equal to the DC load current. Connect VIN to the input unregulated source voltage. Like all low dropout linear regulators, low source impedance is necessary for the stable operation of the LDO. The amount of capacitance required to ensure low source impedance will depend on the proximity of the input source capacitors or battery type. For most applications, 1 µF of capacitance will ensure stable operation of the LDO circuit. For applications that have load currents below 100 mA, the input capacitance requirement can be lowered. The type of capacitor used can be ceramic, tantalum or aluminum electrolytic. The low ESR characteristics of the ceramic will yield better noise and PSRR performance at high frequency. DS21826B-page 10 © 2007 Microchip Technology Inc. MCP1700 4.0 4.1 DETAILED DESCRIPTION Output Regulation 4.3 Overtemperature A portion of the LDO output voltage is fed back to the internal error amplifier and compared with the precision internal bandgap reference. The error amplifier output will adjust the amount of current that flows through the P-Channel pass transistor, thus regulating the output voltage to the desired value. Any changes in input voltage or output current will cause the error amplifier to respond and adjust the output voltage to the target voltage (refer to Figure 4-1). 4.2 Overcurrent The MCP1700 internal circuitry monitors the amount of current flowing through the P-Channel pass transistor. In the event of a short-circuit or excessive output current, the MCP1700 will turn off the P-Channel device for a short period, after which the LDO will attempt to restart. If the excessive current remains, the cycle will repeat itself. The internal power dissipation within the LDO is a function of input-to-output voltage differential and load current. If the power dissipation within the LDO is excessive, the internal junction temperature will rise above the typical shutdown threshold of 140°C. At that point, the LDO will shut down and begin to cool to the typical turn-on junction temperature of 130°C. If the power dissipation is low enough, the device will continue to cool and operate normally. If the power dissipation remains high, the thermal shutdown protection circuitry will again turn off the LDO, protecting it from catastrophic failure. MCP1700 VIN VOUT Error Amplifier +VIN Voltage Reference + Overcurrent Overtemperature GND FIGURE 4-1: Block Diagram. © 2007 Microchip Technology Inc. DS21826B-page 11 MCP1700 5.0 FUNCTIONAL DESCRIPTION 5.2 Output The MCP1700 CMOS low dropout linear regulator is intended for applications that need the lowest current consumption while maintaining output voltage regulation. The operating continuous load range of the MCP1700 is from 0 mA to 250 mA (VR ≥ 2.5V). The input operating voltage range is from 2.3V to 6.0V, making it capable of operating from two, three or four alkaline cells or a single Li-Ion cell battery input. The maximum rated continuous output current for the MCP1700 is 250 mA (VR ≥ 2.5V). For applications where VR < 2.5V, the maximum output current is 200 mA. A minimum output capacitance of 1.0 µF is required for small signal stability in applications that have up to 250 mA output current capability. The capacitor type can be ceramic, tantalum or aluminum electrolytic. The esr range on the output capacitor can range from 0Ω to 2.0Ω. 5.1 Input The input of the MCP1700 is connected to the source of the P-Channel PMOS pass transistor. As with all LDO circuits, a relatively low source impedance (10Ω) is needed to prevent the input impedance from causing the LDO to become unstable. The size and type of the capacitor needed depends heavily on the input source type (battery, power supply) and the output current range of the application. For most applications (up to 100 mA), a 1 µF ceramic capacitor will be sufficient to ensure circuit stability. Larger values can be used to improve circuit AC performance. 5.3 Output Rise time When powering up the internal reference output, the typical output rise time of 500 µs is controlled to prevent overshoot of the output voltage. DS21826B-page 12 © 2007 Microchip Technology Inc. MCP1700 6.0 6.1 APPLICATION CIRCUITS & ISSUES Typical Application EQUATION 6-2: T J ( MAX ) = P TOTAL × R θ JA + T AMAX TJ(MAX) = Maximum continuous junction temperature. PTOTAL = Total device power dissipation. RθJA = Thermal resistance from junction to ambient. TAMAX = Maximum ambient temperature. The maximum power dissipation capability for a package can be calculated given the junction-toambient thermal resistance and the maximum ambient temperature for the application. The following equation can be used to determine the package maximum internal power dissipation. The MCP1700 is most commonly used as a voltage regulator. It’s low quiescent current and low dropout voltage make it ideal for many battery-powered applications. MCP1700 VOUT 1.8V IOUT 150 mA GND VIN VOUT VIN (2.3V to 3.2V) CIN 1 µF Ceramic COUT 1 µF Ceramic FIGURE 6-1: 6.1.1 Typical Application Circuit. EQUATION 6-3: ( T J ( MAX ) – T A ( MAX ) ) P D ( MAX ) = --------------------------------------------------R θ JA PD(MAX) = Maximum device power dissipation. TJ(MAX) = Maximum continuous junction temperature. TA(MAX) = Maximum ambient temperature. RθJA = Thermal resistance from junction to ambient. APPLICATION INPUT CONDITIONS Package Type = SOT-23 Input Voltage Range = 2.3V to 3.2V VIN maximum = 3.2V VOUT typical = 1.8V IOUT = 150 mA maximum 6.2 6.2.1 Power Calculations POWER DISSIPATION EQUATION 6-4: T J ( RISE ) = P D ( MAX ) × R θ JA TJ(RISE) = Rise in device junction temperature over the ambient temperature. PTOTAL = Maximum device power dissipation. RθJA = Thermal resistance from junction to ambient. The internal power dissipation of the MCP1700 is a function of input voltage, output voltage and output current. The power dissipation, as a result of the quiescent current draw, is so low, it is insignificant (1.6 µA x VIN). The following equation can be used to calculate the internal power dissipation of the LDO. EQUATION 6-1: P LDO = ( V IN ( MAX ) ) – V OUT ( MIN ) ) × I OUT ( MAX ) ) PLDO = LDO Pass device internal power dissipation VIN(MAX) = Maximum input voltage VOUT(MIN) = LDO minimum output voltage The maximum continuous operating junction temperature specified for the MCP1700 is +125°C. To estimate the internal junction temperature of the MCP1700, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (RθJA). The thermal resistance from junction to ambient for the SOT-23 pin package is estimated at 230°C/W. EQUATION 6-5: T J = T J ( RISE ) + T A TJ = Junction Temperature. TJ(RISE) = Rise in device junction temperature over the ambient temperature. TA = Ambient temperature. © 2007 Microchip Technology Inc. DS21826B-page 13 MCP1700 6.3 Voltage Regulator TJ = TJRISE + TA(MAX) TJ = 90.2°C Maximum Package Power Dissipation at +40°C Ambient Temperature SOT-23 (230.0°C/Watt = RθJA) PD(MAX) = (125°C - 40°C) / 230°C/W PD(MAX) = 369.6 milli-Watts SOT-89 (52°C/Watt = RθJA) PD(MAX) = (125°C - 40°C) / 52°C/W PD(MAX) = 1.635 Watts TO-92 (131.9°C/Watt = RθJA) PD(MAX) = (125°C - 40°C) / 131.9°C/W PD(MAX) = 644 milli-Watts Internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation are calculated in the following example. The power dissipation, as a result of ground current, is small enough to be neglected. 6.3.1 Package POWER DISSIPATION EXAMPLE Package Type = SOT-23 Input Voltage VIN = 2.3V to 3.2V LDO Output Voltages and Currents VOUT = 1.8V IOUT = 150 mA Maximum Ambient Temperature TA(MAX) = +40°C Internal Power Dissipation Internal Power dissipation is the product of the LDO output current times the voltage across the LDO (VIN to VOUT). PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX) PLDO = (3.2V - (0.97 x 1.8V)) x 150 mA PLDO = 218.1 milli-Watts 6.4 Voltage Reference Device Junction Temperature Rise The internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction to ambient for the application. The thermal resistance from junction to ambient (RθJA) is derived from an EIA/JEDEC standard for measuring thermal resistance for small surface mount packages. The EIA/ JEDEC specification is JESD51-7, “High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages”. The standard describes the test method and board specifications for measuring the thermal resistance from junction to ambient. The actual thermal resistance for a particular application can vary depending on many factors, such as copper area and thickness. Refer to AN792, “A Method to Determine How Much Power a SOT-23 Can Dissipate in an Application”, (DS00792), for more information regarding this subject. TJ(RISE) = PTOTAL x RqJA TJRISE = 218.1 milli-Watts x 230.0°C/Watt TJRISE = 50.2°C The MCP1700 can be used not only as a regulator, but also as a low quiescent current voltage reference. In many microcontroller applications, the initial accuracy of the reference can be calibrated using production test equipment or by using a ratio measurement. When the initial accuracy is calibrated, the thermal stability and line regulation tolerance are the only errors introduced by the MCP1700 LDO. The low cost, low quiescent current and small ceramic output capacitor are all advantages when using the MCP1700 as a voltage reference. Ratio Metric Reference 1 µA Bias CIN 1 µF MCP1700 VIN VOUT GND COUT 1 µF PIC® Microcontroller VREF ADO AD1 Bridge Sensor FIGURE 6-2: voltage reference. Using the MCP1700 as a 6.5 Pulsed Load Applications Junction Temperature Estimate To estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. For this example, the worst-case junction temperature is estimated below. For some applications, there are pulsed load current events that may exceed the specified 250 mA maximum specification of the MCP1700. The internal current limit of the MCP1700 will prevent high peak load demands from causing non-recoverable damage. The 250 mA rating is a maximum average continuous rating. As long as the average current does not exceed 250 mA, pulsed higher load currents can be applied to the MCP1700. The typical current limit for the MCP1700 is 550 mA (TA +25°C). DS21826B-page 14 © 2007 Microchip Technology Inc. MCP1700 7.0 7.1 PACKAGING INFORMATION Package Marking Information 3-Pin SOT-23 CKNN Standard Extended Temp Symbol Voltage * 1.2 1.8 2.5 3.0 3.3 5.0 CK CM CP CR CS CU 3-Pin SOT-89 CUYYWW NNN * Custom output voltages available upon request. Contact your local Microchip sales office for more information. 3-Pin TO-92 Example: XXXXXX XXXXXX XXXXXX YWWNNN 1700 1202E e3 TO^^ 313256 Legend: XX...X Y YY WW NNN e3 * Note: Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. © 2007 Microchip Technology Inc. DS21826B-page 15 MCP1700 3-Lead Plastic Small Outline Transistor (TT or NB) [SOT-23] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging b N E E1 1 e e1 D 2 A c A2 φ A1 Units Dimension Limits Number of Pins Lead Pitch Outside Lead Pitch Overall Height Molded Package Thickness Standoff Overall Width Molded Package Width Overall Length Foot Length Foot Angle Lead Thickness N e e1 A A2 A1 E E1 D L φ c 0.89 0.79 0.01 2.10 1.16 2.67 0.13 0° 0.08 MIN MILLIMETERS NOM 3 0.95 BSC 1.90 BSC – 0.95 – – 1.30 2.90 0.50 – – L MAX 1.12 1.02 0.10 2.64 1.40 3.05 0.60 10° 0.20 Lead Width b 0.30 – 0.54 Notes: 1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.25 mm per side. 2. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing C04-104B DS21826B-page 16 © 2007 Microchip Technology Inc. MCP1700 3-Lead Plastic Small Outline Transistor Header (MB) [SOT-89] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging D D1 E H L 1 b1 2 b e e1 N b1 E1 A C Units Dimension Limits Number of Leads Pitch Outside Lead Pitch Overall Height Overall Width Molded Package Width at Base Molded Package Width at Top Overall Length Tab Length Foot Length Lead Thickness Lead 2 Width N e e1 A H E E1 D D1 L c b 1.40 3.94 2.29 2.13 4.39 1.40 0.79 0.35 0.41 MILLIMETERS MIN 3 1.50 BSC 3.00 BSC 1.60 4.25 2.60 2.29 4.60 1.83 1.20 0.44 0.56 MAX Leads 1 & 3 Width b1 0.36 0.48 Notes: 1. Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side. 2. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing C04-029B © 2007 Microchip Technology Inc. DS21826B-page 17 MCP1700 3-Lead Plastic Transistor Outline (TO or ZB) [TO-92] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E A 1 N L 12 3 b e c D R Units Dimension Limits Number of Pins Pitch Bottom to Package Flat Overall Width Overall Length Molded Package Radius Tip to Seating Plane Lead Thickness N e D E A R L c .125 .175 .170 .080 .500 .014 MIN 3 .050 BSC .165 .205 .210 .105 – .021 INCHES MAX Lead Width b .014 .022 Notes: 1. Dimensions A and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" per side. 2. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing C04-101B DS21826B-page 18 © 2007 Microchip Technology Inc. MCP1700 APPENDIX A: REVISION HISTORY Revision B (February 2007) • Updated Packaging Information. • Corrected Section “Product Identification System”. • Changed X5R to X7R in Notes to “DC Characteristics”, “Temperature Specifications”, and “Typical Performance Curves” . Revision A (November 2005) • Original Release of this Document. © 2007 Microchip Technology Inc. DS21826B-page 19 MCP1700 NOTES: DS21826B-page 20 © 2007 Microchip Technology Inc. MCP1700 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. MCP1700 XTape & Reel XXX Voltage Output X Tolerance X Temp. Range /XX Package Examples: SOT-89 Package: a) b) c) d) e) f) g) h) i) j) k) l) a) b) c) d) e) f) MCP1700T-1202E/MB: MCP1700T-1802E/MB: MCP1700T-2502E/MB: MCP1700T-3002E/MB: MCP1700T-3302E/MB: MCP1700T-5002E/MB: MCP1700-1202E/TO: MCP1700-1802E/TO: MCP1700-2502E/TO: MCP1700-3002E/TO: MCP1700-3302E/TO: MCP1700-5002E/TO: MCP1700T-1202E/TT: MCP1700T-1802E/TT: MCP1700T-2502E/TT: MCP1700T-3002E/TT: MCP1700T-3302E/TT: MCP1700T-5002E/TT: 1.2V VOUT 1.8V VOUT 2.5V VOUT 3.0V VOUT 3.3V VOUT 5.0V VOUT 1.2V VOUT 1.8V VOUT 2.5V VOUT 3.0V VOUT 3.3V VOUT 5.0V VOUT 1.2V VOUT 1.8V VOUT 2.5V VOUT 3.0V VOUT 3.3V VOUT 5.0V VOUT Device: Tape and Reel: MCP1700: Low Quiescent Current LDO T: Tape and Reel only applies to SOT-23 and SOT-89 devices = = = = = = 1.2V 1.8V 2.5V 3.0V 3.3V 5.0V TO-92 Package: Standard Output Voltage: * 120 180 250 300 330 500 * Custom output voltages available upon request. Contact your local Microchip sales office for more information Tolerance: Temperature Range: Package: 2 E = 2% = -40°C to +125°C (Extended) SOT-23 Package: MB = Plastic Small Outline Transistor (SOT-89), 3-lead TO = Plastic Small Outline Transistor (TO-92), 3-lead TT = Plastic Small Outline Transistor SOT-23), 3-lead © 2007 Microchip Technology Inc. DS21826B-page 21 MCP1700 NOTES: DS21826B-page 22 © 2007 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • • • Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” • • Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, KEELOQ logo, microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, Linear Active Thermistor, Migratable Memory, MXDEV, MXLAB, PS logo, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance, UNI/O, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2007, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona, Gresham, Oregon and Mountain View, California. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. © 2007 Microchip Technology Inc. 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