RE46C143

R&E International A Subsidiary of Microchip Technology Inc. RE46C143 CMOS Photoelectric Smoke Detector ASIC with Interconnect Product Specification General Description The RE46C143 is low power CMOS photoelectric type smoke detector IC. With minimal external components this circuit will provide all the required features for a photoelectric type smoke detector. The design incorporates a gain selectable photo amplifier for use with an infrared emitter/detector pair. An internal oscillator strobes power to the smoke detection circuitry for 100us every 8.1 seconds to keep standby current to a minimum. If smoke is sensed the detection rate is increased to verify an alarm condition. A high gain mode is available for push button chamber testing. A check for a low battery condition and chamber integrity is performed every 40 seconds when in standby. The alarm horn pattern utilizes a 75% duty cycle. An interconnect pin allows multiple detectors to be connected such that when one units alarms, all units will sound. Utilizing low power CMOS technology the RE46C143 was designed for use in smoke detectors that comply with Underwriters Laboratory Specification UL217 and UL268. Features • • • • • • • • • Internal Power On Reset Low Quiescent Current Consumption Available in 16L PDIP or 16L N SOIC ESD Protection on all Pins Interconnect up to 40 Detectors 75% Duty Cycle Horn Pattern Low Battery and Chamber Test Compatible with Motorola MC145010 Available in Standard Packaging or RoHS Compliant Pb Free Packaging. Pin Configuration C1 C2 DETECT STROBE VDD IRED IO HORNB 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 TEST LBSET VSS ROSC COSC LED FEED HORNS ABSOLUTE MAXIMUM RATINGS PARAMETER Supply Voltage Input Voltage Range Except FEED, IO FEED Input Voltage Range IO Input Voltage Range Input Current except FEED Operating Temperature Storage Temperature Maximum Junction Temperature SYMBOL VDD Vin Vinfd Vio1 Iin TA TSTG TJ VALUE 12.5 -.3 to Vdd +.3 -10 to +22 -.3 to +17 10 -25 to 75 -55 to 125 150 UNITS V V V V mA °C °C °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and operation at these conditions for extended periods may affect device reliability. This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used when handling this product. Damage can occur when exposed to extremely high static electrical charge. © 2009 Microchip Technology Inc. DS22178A-page 1 RE46C143 CMOS Photoelectric Smoke Detector ASIC with Interconnect Product Specification R&E International A Subsidiary of Microchip Technology Inc. DC Electrical Characteristics at TA = -25° to 75°C, VDD=9V, Typical Application (unless otherwise noted) Parameter Supply Voltage Supply Current Symbol VDD IDD1 IDD2 IDD3 IDD4 Test Pin 5 5 5 5 5 10 7 16 10 7 16 1,2,3 12,15 16 10 1,2 3,12,15 10 16 7 7 11,13 11,13 Test Conditions Operating Configured as in Figure 2, COSC=VSS Configured as in Figure 2, VDD=12V, COSC=VSS Configured as in Figure 2, STROBE on, IRED off, VDD=12V Configured as in Figure 2, STROBE on, IRED on, VDD=12V, Note 1 FEED No Local Alarm, IO as an Input TEST FEED No Local Alarm, IO as an Input TEST VDD=12V, COSC=12V, STROBE active VDD=12V, Vin=VSS VDD=12V, Vin=VSS FEED=-10V VDD=12V, Vin=VDD, STROBE active VDD=12V, Vin=VDD FEED=22V Vin=VDD Vin=VDD Vin=17V, VDD=12 Output Off, Output=VSS Output Off, Output=VDD Min 6 Limits Typ Max 12 4 5.5 6 8 2 3 Units V uA uA mA mA V V V Input Voltage High VIH1 VIH2 VIH4 6.2 3.2 8.5 4.5 Input Voltage Low VIL1 VIL2 VIL4 4.5 2.7 1.5 7 -100 -100 -1 -50 100 100 50 V V V nA nA uA uA nA nA uA uA uA uA uA uA Input Leakage Low IIL1 IIL2 IIL3 ILFD Input Leakage High IIH1 IIH2 IHFD Input Pull Down Current IPD1 IPDIO1 IPDIO2 .25 20 10 80 140 -1 1 Output Leakage Current Low Output Leakage Current High IOZL1 IOZH1 Note 1: Does not include Q3 emitter current. © 2009 Microchip Technology Inc. DS22178A-page 2 RE46C143 CMOS Photoelectric Smoke Detector ASIC with Interconnect Product Specification R&E International A Subsidiary of Microchip Technology Inc. DC Electrical Characteristics (continued) at TA= -25° to 75°, VDD=9V, Typical Application (unless otherwise noted) Parameter Output Voltage Low Symbol VOL1 VOL2 VOL3 Test Pin 8,9 13 11 8,9 7 7 5 4 4 6 6 1,2,3 4 6 4,5 6,5 Test Conditions Iol=16mA, VDD=6.5V Iol=5mA, VDD=6.5V Iol=10mA, VDD=6.5V Ioh=-16mA, VDD=6.5V Alarm, Vio=Vdd-2V or Vio=0V At Conclusion of Local Alarm or Test, Vio=1V R14=100K, R15=47K, ILed=10mA STROBE off, VDD=12V, Iout=-1uA STROBE on, VDD=9V Iout= 100uA to 500uA IRED off, VDD=12V, Iout=1uA IRED on, VDD=9V Iout=0 to -6mA, Ta=25C Local smoke, Push to Test or Chamber Test, Note 1 Internal Reference VDD=6V to 12V, STROBE Output Voltage VDD=6V to 12V, IRED Output Voltage Active, VDD=6V to 12V Active, VDD=6V to 12V Min Limits Typ Max 1 .5 .6 Units V V V V mA mA Output Voltage High Output Current VOh1 IIOH1 IIODMP 5.5 -4 5 6.9 VDD .1 VDD 5.3 2.25 .5 VDD3.85 .01 .3 -50 -30 7.2 7.5 -16 Low Battery Alarm Voltage Output Voltage VLB VSTOF VSTON VIREDOF VIREDON V V VDD 5 3.1 VDD 4.7 .1 3.75 VDD-2 VDD3.15 V V V V V %/ºC %/ºC dB dB Common Mode Voltage Smoke Compare Reference Temperature Coefficient VCM1 Vref TCST TCIRED Line Regulation ΔVSTON ΔVIREDON Note 1: Not production tested Typical values are for design information and are not guaranteed. Limits over the specified temperature range are not production tested and are based on characterization data. © 2009 Microchip Technology Inc. DS22178A-page 3 RE46C143 CMOS Photoelectric Smoke Detector ASIC with Interconnect Product Specification R&E International A Subsidiary of Microchip Technology Inc. AC Electrical Characteristics at TA =-25° to 75°, VDD=9V, VSS=0V, Component Values from Figure 2 ; R9=100KΩ, R12=10MΩ, C5= 1.5nF(unless otherwise noted) Test Pin 12 11,4 11 11 11 4,6 4,6 4,6 4,6 4,6 4,6 4,6 6 8,9 8,9 8,9 8,9 7 7 7 7 Parameter Oscillator Period LED and STROBE On Time LED Period Symbol TPOSC TON1 TPLED1 TPLED2 TPLED4 Test Conditions No Alarm Condition, Note 2 Operating Standby, No Alarm Local Alarm Condition Remote Alarm Only Standby, No Alarm Standby, After 1 Valid Smoke Sample Standby, After 2 Consecutive Valid Smoke Samples In Local Alarm – (3 Consecutive Valid Smoke Samples) In Remote Alarm Pushbutton Test Chamber Test or Low Battery Test, no Alarms Operating, Note 2 Operating, Alarm Condition, Note 1 Low Battery or Failed Chamber Test , No Alarm Operating, Alarm Condition, Note 1 Low Battery or Failed Chamber Test, No Alarm At Conclusion of Local Alarm or Test From Start of Local Alarm to IO Active IO pulse width guaranteed to be filtered. IO as Input, No Local Alarm No Local Alarm, From IO Active Horn Active Min 9.4 9.4 38 .6 9.7 2.42 1.21 1.21 9.7 Limits Typ Max 10.5 10.5 43 .67 11.5 11.5 47 .74 11.8 2.96 1.47 1.47 11.8 Units mS mS S S S S S S S S mS LED IS NOT ON STROBE and IRED Pulse Period TPER1 TPER1A TPER1B TPER2 TPER3 TPER4 TPER5 10.5 2.7 1.33 1.33 10.5 336 39 94 227 9.5 76 39 .91 0 104 252 10.5 84 43 47 115 277 11.5 92 47 1.46 S uS mS mS mS S S S IRED On Time Horn On Time TON2 THON1 THON2 Horn Off Time THOF1 THOF3 IO Charge Dump Duration IO Delay IO Filter TIODMP TIODLY1 TIOFILT 600 .75 1.65 mS S Remote Alarm Delay TIODLY2 Note 1 – See timing diagram for Horn Temporal Pattern Note 2 - TPOSC and TON2 are 100% production tested. All other timing is guaranteed by functional testing. Typical values are for design information and are not guaranteed. Limits over the specified temperature range are not production tested and are based on characterization data. © 2009 Microchip Technology Inc. DS22178A-page 4 RE46C143 CMOS Photoelectric Smoke Detector ASIC with Interconnect Product Specification R&E International A Subsidiary of Microchip Technology Inc. Functional Block Diagram Figure 1 © 2009 Microchip Technology Inc. DS22178A-page 5 RE46C143 CMOS Photoelectric Smoke Detector ASIC with Interconnect Product Specification R&E International A Subsidiary of Microchip Technology Inc. PIN DESCRIPTIONS PIN# 1 PIN NAME C1 DESCRIPTION The capacitor connected to this pin sets the photo amplifier gain (high) for the push-to-test and chamber sensitivity test. The size of this capacitor will depend on the chamber background reflections. A=1+(C1/10) where C1 is in pF. The gain should be