TC1016-3.0VLTTR

TC1016 80 mA, Tiny CMOS LDO With Shutdown Features • Space-Saving 5-Pin SC-70 and SOT-23 Packages • Extremely Low Operating Current for Longer Battery Life: 53 µA (typ.) • Very Low Dropout Voltage • Rated 80 mA Output Current • Requires only 1 µF Ceramic Output Capacitance • High Output Voltage Accuracy: ±0.5% (typ.) • 10 µsec (typ.) Wake-Up Time from SHDN • Power-Saving Shutdown Mode: 0.05 µA(typ.) • Overcurrent and Overtemperature Protection • Pin Compatible Upgrade for Bipolar Regulators General Description The TC1016 is a high-accuracy (typically ±0.5%), CMOS upgrade for bipolar low dropout regulators (LDOs). The TC1016 is offered in both the SC-70 and SOT-23 packages. The SC-70 package represents a 50% footprint reduction versus the popular SOT-23 package. Developed specifically for battery-powered systems, the device’s CMOS construction consumes only 53 µA typical supply current over the entire 80 mA operating load range. This can be as much as 60 times less than the quiescent operating current consumed by bipolar LDOs. With small-space requirements and cost in mind, the TC1016 was developed to be stable over the entire input voltage and output current operating range using low value (1 µF ceramic), low Equivalent Series Resistance (ESR) output capacitors. Additional integrated features (such as shutdown, overcurrent and overtemperature protection) further reduce board space and cost of the entire voltage-regulating application. Key performance parameters for the TC1016 are low drop out voltage (150 mV (typ.) at 80 mA output current), low supply current while shutdown (0.05 µA typical) and fast stable response to sudden input voltage and load changes. Applications • • • • • • Cellular/GSM/PHS Phones Battery-operated Systems Portable Computers Medical Instruments Electronic Games Pagers Pin Configurations SC-70 VIN 5 TC1016 1 2 3 1 VIN VOUT 4 SOT-23 VOUT 5 TC1016 2 3 NC 4 SHDN NC GND GND SHDN © 2005 Microchip Technology Inc. DS21666B-page 1 TC1016 1.0 ELECTRICAL CHARACTERISTICS *Notice: Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability ABSOLUTE MAXIMUM RATINGS* Input Voltage .........................................................6.5V Power Dissipation................ Internally Limited (Note 7) Operating Temperature ................. -40°C < TJ < 125°C Storage Temperature......................... -65°C to +150°C Maximum Voltage On Any Pin........VIN + 0.3V to -0.3V ELECTRICAL CHARACTERISTICS VIN = VR + 1V, IL = 100 µA, CL = 1.0µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface type specifications apply for junction temperatures of – 40°C to +125°C. Parameter Input Operating Voltage Maximum Output Current Output Voltage VOUT Temperature Coefficient Line Regulation Load Regulation (Note 4) Dropout Voltage (Note 5) Sym VIN IOUTMAX VOUT TCVOUT (ΔVOUT/ΔVIN)/VR ΔVOUT/VR VIN – VOUT Min 2.7 80 VR – 2.5% — — — — — — — — — — Typ — — VR ±0.5% 40 0.01 0.23 2 100 150 53 0.05 58 10 Max 6.0 — VR + 2.5% — 0.2 1 — 200 300 90 0.5 — — Units V mA V %/V % mV Note 2 (VR + 1V) < VIN < 6V IL = 0.1 mA to IOUTMAX IL = 100 µA IL = 50 mA IL = 80 mA SHDN = VIH, IL = 0 SHDN = 0V f =1 kHz, IL = 50 mA VIN = 5V, IL = 60 mA, CIN = 1 µF, COUT = 1 µF, f = 100 Hz VIN = 5V, IL = 60 mA,CIN = 1 µF, COUT = 1 µF, f = 100 Hz VOUT = 0V Notes 6, 7 ppm/°C Note 3 Test Conditions Note 1 Supply Current Shutdown Supply Current Power Supply Rejection Ratio Wake-Up Time (from Shutdown mode) Settling Time (from Shutdown Mode) Output Short Circuit Current Thermal Regulation Thermal Shutdown Die Temperature Thermal Shutdown Hysteresis Output Noise SHDN Input High Threshold SHDN Input Low Threshold Note 1: 2: 3: 4: IIN IINSD PSRR tWK µA µA dB µs tS — 32 — µs IOUTSC VOUT/PD TSD ΔTSD eN VIH VIL — — — — — 60 — 120 0.04 160 10 800 — — — — — — — — 15 mA V/W °C °C nV/√Hz %VIN %VIN f = 10 kHz VIN = 2.7V to 6.0V VIN = 2.7V to 6.0V The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + 2.5%)+VDROPOUT. VR is the regulator voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 3.0V. TCV 6 ( VOUTMAX – V OUTMIN ) × 10 = ------------------------------------------------------------------------------------OUT V OUT × ΔT 5: 6: 7: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the Thermal Regulation specification. Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a 1V differential. Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to Ilmax at VIN = 6V for t = 10 msec. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable juction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” of this data sheet for more details. DS21666B-page 2 © 2005 Microchip Technology Inc. TC1016 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 0.25 VOUT = 2.7V 0.25 VOUT = 2.7V 0.2 Dropout Voltage (V) +125°C Dropout Voltage (V) 0.20 ILOAD = 80 mA 0.15 +25°C -40°C 0.15 ILOAD = 50mA 0.1 0.05 0.10 0 0 10 20 30 40 50 60 70 80 0.05 -45 -20 5 30 55 80 105 130 Load Current (mA) Temperature(°C) FIGURE 2-1: Current. 0.35 0.30 VOUT = 2.7V Full Load = 0 – 80 mA Dropout Voltage vs. Output FIGURE 2-4: Temperature. 0.18 Dropout Voltage vs. VOUT = 2.7V VIN = 3.3V 0.16 Short Circuit Current (A) Load Regulation (%) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0.25 0.20 0.15 0.10 0.05 -45 -20 5 30 55 VIN = 3.7V VIN = 6.0V 80 105 130 1 2 3 4 5 6 Temperature (°C) Input Voltage FIGURE 2-2: Temperature. Load Regulation vs. FIGURE 2-5: Input Voltage. Short Circuit Current vs. 57.0 56.0 +125°C VOUT = 2.7V 57.0 56.0 55.0 VIN = 6V VOUT = 2.7V Supply Current (µA) Supply Current (µA) 55.0 54.0 53.0 52.0 51.0 50.0 49.0 48.0 47.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0 -40°C +25°C 54.0 53.0 52.0 51.0 50.0 49.0 48.0 47.0 -45 -20 5 30 55 80 105 130 VIN = 3.3V Input Voltage (V) Temperature(°C) FIGURE 2-3: Voltage. Supply Current vs. Input FIGURE 2-6: Temperature. Supply Current vs. © 2005 Microchip Technology Inc. DS21666B-page 3 TC1016 0.25 VOUT = 3.0V 0.20 0.18 0.16 VOUT = 3.0V ILOAD = 80 mA Dropout Voltage (V) Dropout Voltage (V) 0.2 +125°C 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 ILOAD = 50 mA 0.15 +25°C 0.1 -40°C 0.05 0 -45 0 10 20 30 40 50 60 70 80 -20 5 30 55 80 105 130 Load Current (mA) Temperature (°C) FIGURE 2-7: Current. 0.30 VOUT = 3.0V Full Load = 0 – 80 mA Dropout Voltage vs. Output FIGURE 2-10: Temperature. 54.0 53.0 Dropout Voltage vs. VOUT = 3.0V 0.25 Load Regulation (%) Supply Current (µA) VIN = 6.0V +125°C 0.20 VIN = 3.3V 52.0 51.0 50.0 49.0 -40°C +25°C VIN = 4.0V 0.15 0.10 0.05 0.00 -45 -20 5 30 55 80 105 130 48.0 47.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0 Temperature (°C) Input Voltage (V) FIGURE 2-8: Temperature. 54.0 VOUT = 3.0V Load Regulation vs. FIGURE 2-11: Voltage 2.797 Supply Current vs. Input VIN = 6.0V +25°C 53.0 2.796 +125°C VOUT = 2.8V Supply Current (µA) 52.0 51.0 50.0 49.0 48.0 47.0 -45 -20 5 30 55 80 105 130 VIN = 3.3V Output Voltage (V) 2.795 2.794 2.793 2.792 2.791 -40°C 2.790 2.789 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6 Temperature (°C) Input Voltage (V) FIGURE 2-9: Temperature. Supply Current vs. FIGURE 2-12: Voltage. Output Voltage vs. Supply DS21666B-page 4 © 2005 Microchip Technology Inc. TC1016 2.797 2.796 2.795 VIN = 3.3V VOUT = 2.8V 2.798 2.797 VOUT = 2.8V VIN = 3.3V Output Voltage (V) 2.794 2.793 2.792 2.791 2.790 2.789 2.788 2.787 0 10 20 30 40 50 60 70 80 VIN = 6.0V Output Voltage (V) 2.796 2.795 2.794 VIN = 6.0V 2.793 2.792 2.791 2.790 2.789 -45 -20 5 30 55 80 105 130 VIN = 4.0V Output Current (mA) Temperature (°C) FIGURE 2-13: Current. 0.250 Output Voltage vs. Output FIGURE 2-16: Temperature. 100 Output Voltage vs. Shutdown Current (µA) 0.200 +125°C 10 0.150 Noise (µV/√Hz) VIN = 4.0V VOUT = 3.0V CIN = 1 μF COUT = 1 μF IOUT = 40 mA 1 0.100 0.1 0.050 +25°C 0.000 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0 0.01 10 100 1000 10000 100000 1000000 Input Voltage (V) Frequency (Hz) FIGURE 2-14: Voltage. Shutdown Current vs. Input FIGURE 2-17: Output Noise vs. Frequency. 0 -10 -20 1. E +01 1 . +03 E 1. +0 5 E VINDC = 2.8V VINAC = 100 mVp-p VOUTDC = 1.8V IOUT = 100 μA COUT = 1 μF X7R Ceramic 0 -10 -20 10 1 000 1 00000 VINDC = 2.8V VINAC = 100 mVp-p VOUTDC = 1.8V IOUT = 1 mA COUT = 1 μF X7R Ceramic PSRR(dB) -30 -40 -50 -60 PSRR(dB) -30 -40 -50 -60 -70 -70 -80 -80 10 100 1K 10K 100K 1M 10 100 1K 10K 100K 1M Frequency (Hz) Frequency (Hz) FIGURE 2-15: Power Supply Rejection Ratio vs. Frequency. FIGURE 2-18: Power Supply Rejection Ratio vs. Frequency. © 2005 Microchip Technology Inc. DS21666B-page 5 TC1016 0 -10 -20 10 1 000 1 00000 VINDC = 2.8V VINAC = 100 mVp-p VOUTDC = 1.8V IOUT = 50 mA COUT = 1 μF X7R Ceramic VIN = 2.8V CIN = 10 µF COUT = 1 µF Ceramic PSRR(dB) -30 -40 -50 -60 -70 -80 10 100 1K 10K 100K 1M VOUT = 1.8V IOUT = 0.1 mA to 60 mA Frequency (Hz) FIGURE 2-19: Power Supply Rejection Ratio vs. Frequency. FIGURE 2-22: Load Transient Response. VIN = 2.8V CIN = 10 µF COUT = 1 µF Ceramic VOUT = 1.8V VIN = 2.8V CIN = 10 µF COUT = 1 µF Ceramic VOUT = 1.8V IOUT = 0.1 mA to 60 mA Shutdown Input FIGURE 2-20: Wake-Up Response. FIGURE 2-23: Load Transient Response. VIN = 2.8V CIN = 10 µF COUT = 4.7 µF Ceramic VOUT = 1.8V ILOAD = 60 mA CIN = 0 µF COUT = 1 µF Ceramic VOUT = 1.8V IOUT = 2.8V to 3.8V Shutdown Input FIGURE 2-21: Wake-Up Response. FIGURE 2-24: Line Transient Response. DS21666B-page 6 © 2005 Microchip Technology Inc. TC1016 ILOAD = 60 mA CIN = 0 µF COUT = 4.7 µF Ceramic VOUT = 1.8V VOUT = 2.8V to 3.8V FIGURE 2-25: Line Transient Response. ILOAD = 100 µA CIN = 0 µF COUT = 1 µF Ceramic VIN = 4V to 5V VOUT = 2.8V FIGURE 2-26: Line Transient Response. ILOAD = 100 µA CIN = 0 µF COUT = 10 µF Ceramic VIN = 4V to 5V VOUT = 2.8V FIGURE 2-27: Line Transient Response. © 2005 Microchip Technology Inc. DS21666B-page 7 TC1016 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Name SHDN NC GND VOUT VIN Shutdown control input No connect Ground terminal Regulated voltage output Unregulated supply input Function 5-Pin Pin No. SC-70 5-Pin SOT-23 1 2 3 4 5 3 4 2 5 1 3.1 Shutdown Control Input (SHDN) 3.4 Unregulated Supply Input (VIN) The regulator is fully enabled when a logic-high is applied to SHDN. The regulator enters shutdown when a logic-low is applied to this input. During shutdown, the output voltage falls to zero and the supply current is reduced to 0.05 µA (typ.) 3.2 Ground Terminal (GND) The minimum VIN has to meet two conditions in order to ensure that the output maintains regulation: VIN ≥ 2.7V and VIN ≥ [(VR + 2.5%) + VDROPOUT]. The maximum VIN should be less than or equal to 6V. Power dissipation may limit VIN to a lower potential in order to maintain a junction temperature below 125°C. Refer to Section 5.0 “Thermal Considerations”, for determining junction temperature. It is recommended that VIN be bypassed to GND with a ceramic capacitor. For best performance, it is recommended that the ground pin be tied to a ground plane. 3.3 Regulated Voltage Output (VOUT) Bypass the regulated voltage output to GND with a minimum capacitance of 1 µF. A ceramic bypass capacitor is recommended for best performance. DS21666B-page 8 © 2005 Microchip Technology Inc. TC1016 4.0 DETAILED DESCRIPTION The TC1016 is a precision, fixed-output, linear voltage regulator. The internal linear pass element is a Pchannel MOSFET. As with all P-channel CMOS LDOs, there is a body drain diode, with the cathode connected to VIN and the anode connected to VOUT (Figure 4-1). As shown in Figure 4-1, the output voltage of the LDO is sensed and divided down internally to reduce external component count. The internal error amplifier has a fixed, band gap reference on the inverting input, with the sensed output voltage on the non-inverting input. The error amplifier output will pull the gate voltage down until the inputs of the error amplifier are equal in order to regulate the output voltage. By sensing the current in the P-channel MOSFET, the maximum current delivered to the load is limited to a typical value of 120 mA, preventing excessive current from damaging the Printed Circuit Board (PCB) in the event of a shorted or faulted load. An internal thermal sensing device is used to monitor the junction temperature of the LDO. When the sensed temperature is over the set threshold of 160°C (typ.), the P-channel MOSFET is turned off. When the MOSFET is off, the power dissipation internal to the device is almost zero. The device cools until the junction temperature is approximately 150°C and the MOSFET is turned on. If the internal power dissipation is still high enough for the junction to rise to 160°C, it will again shut off and cool. The maximum operating junction temperature of the device is 125°C. Steadystate operation at or near the 160°C overtemperature point can lead to permanent damage of the device. The output voltage (VOUT) remains stable over the entire input operating voltage range (2.7V to 6.0V), as well as the entire load range (0 mA to 80 mA). The output voltage is sensed through an internal resistor divider and compared with a precision internal voltage reference. Several fixed-output voltages are available by changing the value of the internal resistor divider. Figure 4-2 shows a typical application circuit. The regulator is enabled anytime the shutdown input pin is at or above VIH, and shutdown (disabled) anytime the shutdown input pin is below VIL. For applications where the SHDN feature is not used, tie the SHDN pin directly to the input supply voltage source. While in shutdown, the supply current decreases to 0.05 µA (typ.) and the P-channel MOSFET is turned off. As shown in Figure 4-2, batteries have internal source impedance. An input capacitor in used to lower the input impedance of the LDO. In some applications, high input impedance can cause the LDO to become unstable. Adding more input capacitance can compensate for this. 1 SHDN VIN 5 Current Limit 2 NC VIN SHDN VREF Control EA + Error Amp 3 GND Over Temp. R1 R2 Feedback Resistors VOUT 4 Body Diode FIGURE 4-1: TC1016 Block Diagram. 1 RSOURCE BATTERY 2 SHDN TC1016 NC VIN 5 CIN 1 µF Ceramic 3 GND VOUT 4 COUT Load 1 µF Ceramic FIGURE 4-2: Typical Application Circuit. © 2005 Microchip Technology Inc. DS21666B-page 9 TC1016 4.1 Input Capacitor 4.3 Turn-On Response Low input source impedance is necessary for the LDO to operate properly. When operating from batteries, or in applications with long lead length (> 10") between the input source and the LDO, some input capacitance is required. A minimum of 0.1 µF is recommended for most applications and the capacitor should be placed as close to the input of the LDO as is practical. Larger input capacitors will help reduce the input impedance and further reduce any high-frequency noise on the input and output of the LDO. The turn on response is defined as two separate response categories, Wake-up Time (tWK) and Settling Time (tS). The TC1016 has a fast tWK (10 µsec, typ.) when released from shutdown. Figure 4-3 provides the TC1016’s tWK. The tWK is defined as the time it takes for the output to rise to 2% of the VOUT value after being released from shutdown. The total turn-on response is defined as the tS (see Figure 4-3). The tS (inclusive with tWK) is defined as the condition when the output is within 98% of its fully enabled value (42 µsec, typ.) when released from shutdown. The settling time of the output voltage is dependent on load conditions and output capacitance on VOUT (RC response). Table 4-1 demonstrates the typical turn-on response timing for different input voltage power-up frequencies: VOUT = 2.8V, VIN = 5.0V, IOUT = 60 mA and COUT = 1 µF. 4.2 Output Capacitor A minimum output capacitance of 1 µF for the TC1016 is required for stability. The ESR requirements on the output capacitor are between 0 and 2 ohms. The output capacitor should be located as close to the LDO output as is practical. Ceramic materials X7R and X5R have low temperature coefficients and are well within the acceptable ESR range required. A typical 1 µF X5R 0805 capacitor has an ESR of 50 milli-ohms. Larger output capacitors can be used with the TC1016 to improve dynamic behavior and input ripple rejection performance. Ceramic, aluminum electrolytic or tantalum capacitor types can be used. Since many aluminum electrolytic capacitors freeze at approximately –30°C, ceramic or solid tantalums are recommended for applications operating below –25°C. When operating from sources other than batteries, supply noise rejection and transient response can be improved by increasing the value of the input and output capacitors, and by employing passive filtering techniques. TABLE 4-1: Frequency 1000 Hz 500 Hz 100 Hz 50 Hz 10 Hz TYPICAL TURN-ON RESPONSE TIMING Typical (tWK) 5.3 µsec 5.9 µsec 9.8 µsec 14.5 µsec 17.2 µsec Typical (tS) 14 µsec 16 µsec 32 µsec 52 µsec 77 µsec VIH VIL 98% VOUT 2% tWK tS SHDN FIGURE 4-3: Wake-Up Time from Shutdown. DS21666B-page 10 © 2005 Microchip Technology Inc. TC1016 5.0 5.1 THERMAL CONSIDERATIONS Thermal Shutdown Given the following example: VIN VOUT ILOAD Find: 1. Internal power dissipation: P DMAX = ( V IN_MAX – V OUT_MIN ) × ILOAD = ( 4.1 V – 2.8 × ( 0.975 ) ) × 60 mA = 82.2 mW 2. Junction temperature: T J_MAX = = = = 3. P DMAX × R θ JA 82.2 mWatts × 450 ° C /W + T AMAX 37 ° C + 55 ° C 92 ° C = 3.0V to 4.1V = 2.8V ±2.5% = 60 mA (output current) Integrated thermal-protection circuitry shuts the regulator off when die temperature exceeds approximately 160°C. The regulator remains off until the die temperature drops to approximately 150°C. TAMAX = 55°C (max. ambient temp.) 5.2 Power Dissipation The TC1016 is available in the SC-70 package. The thermal resistance for the SC-70 package is approximately 450°C/W when the copper area used in the PCB layout is similar to the JEDEC J51-7 high thermal conductivity or Semi G42-88 standards. For applications with larger or thicker copper areas, the thermal resistance can be lowered. See AN792 “A Method to Determine How Much Power a SOT23 Can Dissipate in an Application” (DS00792), for a method to determine the thermal resistance for a particular application. The TC1016 power dissipation capability is dependant upon several variables: input voltage, output voltage, load current, ambient temperature and maximum junction temperature. The absolute maximum steadystate junction temperature is rated at 125°C. The power dissipation within the device is equal to: Maximum allowable dissipation: T J_MAX – T A_MAX P D = -------------------------------------------R θ JA 125 ° C – 55 ° C = ---------------------------------450 ° C /W = 155 mW EQUATION 5-1: PD = ( VIN – V OUT ) × I LOAD + V IN × I GND The VIN x IGND term is typically very small when compared to the (VIN-VOUT) x ILOAD term simplifying the power dissipation within the LDO to be: In this example, the TC1016 dissipates approximately 82.2 mW and the junction temperature is raised 37°C over the 55°C ambient to 92°C. The absolute maximum power dissipation is 155 mW when given a maximum ambient temperature of 55°C. Input voltage, output voltage or load current limits can also be determined by substituting known values in Equation 5-2 and Equation 5-3. EQUATION 5-2: PD = ( VIN – VOUT ) × I LOAD To determine the maximum power capability, the following equation is used: dissipation 5.3 Layout Considerations EQUATION 5-3: ( T J_MAX – T A_MAX ) P DMAX = -----------------------------------------------R θJA Where: TJ_MAX = maximum junction temperature allowed TA_MAX = the maximum ambient temperature allowed RθJA = the thermal resistance from junction-to-air The primary path for heat conduction out of the SC-70 package is through the package leads. Using heavy, wide traces at the pads of the device will facilitate the removal of heat within the package, thus lowering the thermal resistance RθJA. By lowering the thermal resistance, the maximum internal power dissipation capability of the package is increased. SHDN VIN U1 VOUT C1 C2 GND FIGURE 5-1: © 2005 Microchip Technology Inc. Suggested layout DS21666B-page 11 TC1016 6.0 6.1 PACKAGE INFORMATION Package Marking Information 5-Lead SC-70 Part Number XXN (Front) YWW (Back) TC1016 – 1.8VLT TC1016 – 1.85VLT TC1016 – 2.6VLT TC1016 – 2.7VLT TC1016 – 2.8VLT 5-Lead SC-70 TC1016 – 2.85VLT TC1016 – 2.9VLT TC1016 – 3.0VLT TC1016 – 3.3VLT TC1016 – 4.0VLT Code AE AW AF AG AH AJ AK AL AM AP Example: AE7 (Front) 432 (Back) Example: XXNN AE74 Legend: XX...X Y YY WW NNN e3 * Customer-specific information* Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. DS21666B-page 12 © 2005 Microchip Technology Inc. TC1016 6.1 Package Marking Information (Continued) Part Number TC1016 – 1.8VCT 5-Lead SOT-23 TC1016 – 1.85VCT TC1016 – 2.6VCT TC1016 – 2.7VCT TC1016 – 2.8VCT TC1016 – 2.85VCT TC1016 – 2.9VCT TC1016 – 3.0VCT TC1016 – 3.3VCT TC1016 – 4.0VCT Code XXNN HK HW HL HM HP HQ HR HS HT HU Example HK73 © 2005 Microchip Technology Inc. DS21666B-page 13 TC1016 5-Lead Plastic Small Outline Transistor (LT) (SC-70) E E1 D p B n 1 Q1 c A1 L Units Dimension Limits n p A A2 A1 E E1 D L Q1 c B INCHES NOM 5 .026 (BSC) MILLIMETERS* NOM 5 0.65 (BSC) 0.80 0.80 0.00 1.80 1.15 1.80 0.10 0.10 0.10 0.15 A2 A MIN MAX MIN MAX Number of Pins Pitch Overall Height Molded Package Thickness Standoff Overall Width Molded Package Width Overall Length Foot Length Top of Molded Pkg to Lead Shoulder Lead Thickness Lead Width .031 .031 .000 .071 .045 .071 .004 .004 .004 .006 .043 .039 .004 .094 .053 .087 .012 .016 .007 .012 1.10 1.00 0.10 2.40 1.35 2.20 0.30 0.40 0.18 0.30 *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" (0.127mm) per side. JEITA (EIAJ) Standard: SC-70 Drawing No. C04-061 Dimensions: inches (mm) DS21666B-page 14 © 2005 Microchip Technology Inc. TC1016 5-Lead Plastic Small Outline Transistor (OT) (SOT-23) E E1 p B p1 D n 1 α c A A2 β L φ A1 Number of Pins Pitch p1 Outside lead pitch (basic) Overall Height A .035 .057 0.90 Molded Package Thickness A2 .035 .051 0.90 Standoff A1 .000 .006 0.00 Overall Width E .102 .118 2.60 Molded Package Width E1 .059 .069 1.50 Overall Length D .110 .122 2.80 Foot Length L .014 .022 0.35 φ Foot Angle 0 10 0 c Lead Thickness .004 .008 0.09 Lead Width B .014 .020 0.35 α Mold Draft Angle Top 0 10 0 β Mold Draft Angle Bottom 0 10 0 *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" (0.127mm) per side. EIAJ Equivalent: SC-74A Drawing No. C04-091 Units Dimension Limits n p MIN INCHES* NOM 5 .038 .075 .046 .043 .003 .110 .064 .116 .018 5 .006 .017 5 5 MAX MIN MILLIMETERS NOM 5 0.95 1.90 1.18 1.10 0.08 2.80 1.63 2.95 0.45 5 0.15 0.43 5 5 MAX 1.45 1.30 0.15 3.00 1.75 3.10 0.55 10 0.20 0.50 10 10 © 2005 Microchip Technology Inc. DS21666B-page 15 TC1016 NOTES: DS21666B-page 16 © 2005 Microchip Technology Inc. TC1016 APPENDIX A: REVISION HISTORY Revision B (March 2005) • Updated Section 6.0 “Package Information” to include old and new packaging examples, as well as replaced SC-70 package diagram with up-todate version. Added additional voltage options • Added SOT-23 package and voltage options. • Applied new template and rearranged sections to be consistent with current documentation. .Revision A (October 2001) • Original Release of this Document. © 2005 Microchip Technology Inc. DS21666B-page 17 TC1016 NOTES: DS21666B-page 18 © 2005 Microchip Technology Inc. TC1016 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device X.XX Voltage Options X Temperature Range XXXX Package Examples: a) TC1016-1.8VCTTR: 80 mA Tiny CMOS LDO with Shutdown, SOT-23 Package. 80 mA Tiny CMOS LDO with Shutdown, SC-70 Package. LDO with Shutdown, SOT-23 Package. a) Device: TC1016: 80 mA Tiny CMOS LDO with Shutdown TC1016-1.8VLTTR: Voltage Options*: (Standard) 1.8V 1.85V 2.6V 2.7V 2.8V 2.85V 2.9V 3.0V 3.3V 4.0V * Other voltage options available. Please contact your local Microchip sales office for details. b) TC1016-1.85VCTTR: 80 mA Tiny CMOS c) TC1016-1.85VLTTR: 80 mA Tiny CMOS LDO with Shutdown, SC-70 Package. d) TC1016-2.6VCTTR: 80 mA Tiny CMOS LDO with Shutdown, SOT-23 Package. 80 mA Tiny CMOS LDO with Shutdown, SC-70 Package. 80 mA Tiny CMOS LDO with Shutdown, SOT-23 Package. 80 mA Tiny CMOS LDO with Shutdown, SC-70 Package. 80 mA Tiny CMOS LDO with Shutdown, SOT-23 Package. 80 mA Tiny CMOS LDO with Shutdown, SC-70 Package. with Shutdown, SC-70 Package. e) TC1016-2.6VLTTR: Temperature Range: V = -40°C to +125°C f) TC1016-2.7VCTTR: Packages: LTTR = 5-pin SC-70 (Tape and Reel) CTTR = 5-pin SOT-23 (Tape and Reel) g) TC1016-2.7VLTTR: h) TC1016-2.8VCTTR: i) TC1016-2.8VLTTR: j) TC1016-2.85VLTTR: 80 mA Tiny CMOS LDO © 2005 Microchip Technology Inc. DS21666A-page19 TC1016 NOTES: DS21666A-page20 © 2005 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • • Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” • • • Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance and WiperLock are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2005, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company’s quality system processes and procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. © 2005 Microchip Technology Inc. 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