TC1017-2.7VLT

M Features • Space-saving 5-Pin SC-70 and SOT-23 Packages • Extremely Low Operating Current for Longer Battery Life: 53 µA (typ.) • Very Low Dropout Voltage • Rated 150 mA Output Current • Requires Only 1 µF Ceramic Output Capacitance • High Output Voltage Accuracy: ±0.5% (typ.) • 10 µsec (typ.) Wake-Up Time from SHDN • Power-Saving Shutdown Mode: 0.05 µA (typ.) • Overcurrent and Overtemperature Protection • Pin Compatible Upgrade for Bipolar Regulators TC1017 General Description The TC1017 is a high-accuracy (typically ±0.5%) CMOS upgrade for bipolar low dropout regulators. It is offered in a SC-70 or SOT-23 package. The SC-70 package represents a 50% reduced footprint versus the popular SOT-23 package. Developed specifically for battery-powered systems, the TC1017’s CMOS construction consumes only 53 µA typical supply current over the entire 150 mA operating load range. This can be as much as 60 times less than the quiescent operating current consumed by bipolar LDOs. With small-space requirements and cost in mind, the TC1017 was developed to be stable over the entire input voltage and output current operating range using low value (1 µF ceramic), low equivalent series resistance output capacitors. Additional integrated features, such as shutdown, overcurrent and overtemperature protection, further reduce the board space and cost of the entire voltage regulating application. Key performance parameters for the TC1017 are low dropout voltage (285 mV typical at 150 mA output current), low supply current while shutdown (0.05 µA typical) and fast stable response to sudden input voltage and load changes. 150 mA, Tiny CMOS LDO With Shutdown Applications • • • • • • Cellular/GSM/PHS Phones Battery Operated Systems Portable Computers Medical Instruments Electronic Games Pagers Package Types SC-70 VIN 5 VOUT 4 TC1017 1 2 3 GND NC 4 SHDN NC SOT-23 VOUT 5 TC1017 1 2 3 VIN GND SHDN  2003 Microchip Technology Inc. DS21813B-page 1 TC1017 1.0 ELECTRICAL CHARACTERISTICS PIN FUNCTION TABLE Name SHDN NC GND VOUT VIN No connect Ground terminal Regulated voltage output Unregulated supply input Function Shutdown control input. Absolute Maximum Ratings † Input Voltage ....................................................................6.5V Output Voltage ......................................... (–0.3) to (VIN + 0.3) Power Dissipation .......................... Internally Limited (Note 7) Maximum Voltage On Any Pin ................. VIN + 0.3V to –0.3V † Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH , TA = +25°C Boldface type specifications apply for junction temperatures of – 40°C to +125°C. Parameter Input Operating Voltage Maximum Output Current Output Voltage VOUT Temperature Coefficient Line Regulation Load Regulation (Note 4) Dropout Voltage (Note 5) Sym VIN IOUTMAX V OUT TCV OUT |(∆VOUT /∆VIN)| / VR |∆VOUT| / VR VIN – VOUT Min 2.7 150 VR – 2.5% — — — — — — — — — — — Typ — — VR ±0.5% 40 0.04 0.38 2 90 180 285 53 0.05 58 10 Max 6.0 — VR + 2.5% — 0.2 1.5 — 200 350 500 90 2 — — Units V mA V ppm/°C %/V % mV Note 2 Note 3 (VR + 1V) < VIN < 6V IL = 0.1 mA to IOUTMAX IL = 100 µA IL = 50 mA IL = 100 mA IL = 150 mA SHDN = VIH , IL = 0 SHDN = 0V f =1 kHz, IL = 50 mA V IN = 5V, IL = 60 mA, CIN = COUT =1 µF, f = 100 Hz Test Conditions Note 1 Supply Current Shutdown Supply Current Power Supply Rejection Ratio Wake-Up Time (from Shutdown Mode) Note 1: 2: 3: IIN IINSD PSRR tWK µA µA dB µs The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ ( VR + 2.5%) + VDROPOUT. VR is the regulator voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 3.0V. 6 ( V O UTMAX – V OUTMIN ) × 10 TCV OUT = ------------------------------------------------------------------------------------V OUT × ∆T 4: 5: 6: Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a 1V differential. Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 5.1, “Thermal Considerations”, for more details. 7: DS21813B-page 2  2003 Microchip Technology Inc. TC1017 ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH , TA = +25°C Boldface type specifications apply for junction temperatures of – 40°C to +125°C. Parameter Settling Time (from Shutdown Mode) Output Short-Circuit Current Thermal Regulation Thermal Shutdown Die Temperature Thermal Shutdown Hysteresis Output Noise SHDN Input High Threshold SHDN Input Low Threshold Note 1: 2: 3: Sym tS Min — Typ 32 Max — Units µs Test Conditions V IN = 5V, IL = 60 mA, CIN = 1 µF, COUT = 1 µF, f = 100 Hz V OUT = 0V, Average Current Notes 6, 7 IOUTSC VOUT/PD TSD ∆TSD eN VIH V IL — — — — — 45 — 120 0.04 160 10 800 — — — — — — — — 15 mA V/W °C °C nV/√Hz %V IN %V IN f = 10 kHz VIN = 2.7V to 6.0V VIN = 2.7V to 6.0V The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ ( VR + 2.5%) + VDROPOUT. VR is the regulator voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 3.0V. TCV 6 (V –V ) × 10 O UTMAX OUTMIN = ------------------------------------------------------------------------------------OUT V OUT × ∆T 4: 5: 6: Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a 1V differential. Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 5.1, “Thermal Considerations”, for more details. 7: TEMPERATURE CHARACTERISTICS Electrical Specifications: U nless otherwise indicated, VDD = +2.7V to +5.5V and VSS = G ND. Parameters Temperature Ranges Specified Temperature Range Operating Temperature Range Storage Temperature Range Thermal Package Resistances Thermal Resistance, 5L-SOT23 Thermal Resistance, 5L-SC-70 θJA θJA — — 255 450 — — °C/W °C/W TA TA TA TA -40 -40 -40 -65 — — — — +85 +125 +125 +150 °C °C °C °C Industrial Temperature parts Extended Temperature parts Sym Min Typ Max Units Conditions  2003 Microchip Technology Inc. DS21813B-page 3 TC1017 2.0 Note: TYPICAL PERFORMANCE CHARACTERISTICS The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise noted, V IN = VR + 1V, IL = 100 µA, C L = 1.0 µF, SHDN > VIH, TA = +25°C. 0.40 Dropout Voltage (V) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 25 50 75 100 125 150 Load Current (mA) 0.40 TA = +125°C TA = +25°C TA = -40°C VOUT = 2.85V Dropout Voltage (V) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -40 VOUT = 2.85V IOUT = 150 mA IOUT = 100 mA IOUT = 50 mA -15 10 35 60 85 110 Temperature (°C) FIGURE 2-1: Current. -0.30 Load Regulation (%) -0.35 -0.40 -0.45 -0.50 -0.55 -0.60 -0.65 -0.70 -40 -15 Dropout Voltage vs. Output FIGURE 2-4: Temperature. 160 Short Circuit Current (mA) 140 120 100 80 60 40 20 0 1 2 Dropout Voltage vs. VOUT = 2.85V IOUT = 0-150 mA VOUT = 2.85V VIN = 6.0V VIN = 3.85V VIN = 3.3V 10 35 60 85 110 3 4 5 6 Temperature (°C) Input Voltage (V) FIGURE 2-2: Temperature. 57 Supply Current (µA) 56 55 54 53 52 51 50 3.3 3.6 3.9 TA = -40°C TA = +125°C Load Regulation vs. FIGURE 2-5: Input Voltage. 57 Supply Current (µA) 56 55 54 53 52 51 50 -40 -15 10 Short-Circuit Current vs. VOUT = 2.85V VOUT = 2.85V VIN = 6.0V VIN = 3.85V TA = +25°C VIN = 3.3V 4.2 4.5 4.8 5.1 5.4 5.7 6.0 35 60 85 110 Input Voltage (V) Temperature (°C) FIGURE 2-3: Voltage. Supply Current vs. Input FIGURE 2-6: Temperature. Supply Current vs. DS21813B-page 4  2003 Microchip Technology Inc. TC1017 Note: Unless otherwise noted, V IN = VR + 1V, IL = 100 µA, C L = 1.0 µF, SHDN > VIH, TA = +25°C. 0.40 Dropout Voltage (V) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 25 50 75 100 125 150 Load Current (mA) 0.40 Dropout Voltage (V) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -40 -15 10 35 60 85 110 Temperature (°C) IOUT = 50 mA IOUT = 100 mA V OUT = 3.30V TA = +125°C TA = +25°C TA = -40°C VOUT = 3.30V IOUT = 150 mA FIGURE 2-7: Current. -0.30 Load Regulation (%) -0.35 -0.40 -0.45 -0.50 -0.55 -0.60 -0.65 -0.70 -40 -15 V IN = 4.3V V IN = 4.0V V IN = 6.0V Dropout Voltage vs. Output FIGURE 2-10: Temperature. 60 Supply Current (µA) 59 58 57 56 55 54 53 52 4.0 Dropout Voltage vs. VOUT = 3.30V IOUT = 0-150 mA VOUT = 3.30V TA = +25°C TA = +125°C TA = -40°C 10 35 60 85 110 4.5 5.0 Input Voltage (V) 5.5 6.0 Temperature (°C) FIGURE 2-8: Temperature. 60 Supply Current (µA) 59 58 57 56 55 54 53 52 -40 -15 VIN = 4.0V VIN = 6.0V VIN = 4.3V Load Regulation vs. FIGURE 2-11: Voltage. 2.869 Output Voltage (V) 2.868 2.867 2.866 2.865 2.864 2.863 2.862 3.3 3.6 3.9 Supply Current vs. Input VOUT = 3.30V VOUT = 2.85V TA = -40°C TA = +25°C TA = +125°C 10 35 60 85 110 4.2 4.5 4.8 5.1 5.4 5.7 6.0 Temperature (°C) Input Voltage (V) FIGURE 2-9: Temperature. Supply Current vs. FIGURE 2-12: Voltage. Output Voltage vs. Supply  2003 Microchip Technology Inc. DS21813B-page 5 TC1017 Note: Unless otherwise noted, V IN = VR + 1V, IL = 100 µA, C L = 1.0 µF, SHDN > VIH, TA = +25°C. 2.870 2.868 Output Voltage (V) 2.866 2.864 2.862 2.860 2.858 2.856 2.854 0 25 50 75 100 125 150 Load Current (mA) VIN = 3.85V VIN = 6.0V VOUT = 2.85V 2.869 2.868 Output Voltage (V) 2.867 2.866 2.865 2.864 2.863 2.862 -40 -15 10 35 60 VIN= 3.85V VIN = 6.0V VIN = 3.3V VOUT = 2.85V 85 110 Temperature (°C) FIGURE 2-13: Current. 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Output Voltage vs. Output FIGURE 2-16: Temperature. 100 10 1 0.1 0.01 10 100 Output Voltage vs. Shutdown Current (µA) VOUT = 2.85V TA = +125°C TA = +25°C 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0 Noise (mV/ Hz) VIN = 3.85V VOUT = 2.85V CIN = 1 F COUT = 1 F IOUT = 40 mA 1000 10000 100000 1000000 Input Voltage (V) Frequency (Hz) FIGURE 2-14: Voltage. 0 -10 PSRR (dB) -20 -30 -40 -50 -60 -70 0.01 0.1 Shutdown Current vs. Input FIGURE 2-17: Output Noise vs. Frequency. VINDC = 3.85V VINAC = 100 mVp-p VOUTDC = 2.85V IOUT = 100 µA COUT =1 µF X7R Ceramic 0 -10 PSRR (dB) -20 -30 -40 -50 -60 VINDC = 3.85V VINAC = 100 mVp-p VOUTDC = 2.85V IOUT = 1 mA COUT = 1 µF X7R Ceramic 1 10 100 1000 -70 0.01 0.1 1 10 100 1000 Frequency (KHz) Frequency (KHz) FIGURE 2-15: Power Supply Rejection Ratio vs. Frequency. FIGURE 2-18: Power Supply Rejection Ratio vs. Frequency. DS21813B-page 6  2003 Microchip Technology Inc. TC1017 Note: Unless otherwise noted, V IN = VR + 1V, IL = 100 µA, C L = 1.0 µF, SHDN > VIH, TA = +25°C. 0 -10 -20 PSRR (dB) -30 -40 -50 -60 -70 -80 0.01 0.1 1 10 100 1000 IOUT = 0.1 mA to 120 mA V IN = 3.85V CIN = 10 µF = 1 µF Ceramic VINDC = 3.85V VINAC = 100 mVp-p VOUTDC = 2.85V IOUT = 50 mA COUT = 1µF X7R Ceramic V OUT = 2.85V COUT Frequency (KHz) FIGURE 2-19: Power Supply Rejection Ratio vs. Frequency. V OUT = 2.85V FIGURE 2-22: Load Transient Response. COUT V IN = 3.85V CIN = 10 µF = 1 µF Ceramic VOUT = 2.85V V IN = 3.85V CIN = 10 µF = 4.7 µF Ceramic COUT Shutdow n Input IOUT = 0.1 mA to 120 mA FIGURE 2-20: Wake-Up Response. VOUT = 2.85V FIGURE 2-23: Load Transient Response. CIN = 0 µF COUT = 1.0 µF Ceramic ILOAD = 120 mA V IN = 3.85V CIN = 10 µF COUT = 4.7 µF Ceramic VOUT = 2.85V VIN = 3.85V to 4.85V Shutdow n Input FIGURE 2-21: Wake-Up Response. FIGURE 2-24: Line Transient Response.  2003 Microchip Technology Inc. DS21813B-page 7 TC1017 Note: Unless otherwise noted, V IN = VR + 1V, IL = 100 µA, C L = 1.0 µF, SHDN > VIH, TA = +25°C. CIN = 0 µF COUT = 4.7 µF Ceramic ILOA D = 120 mA V OUT = 2.85V CIN = 0 µF COUT = 1 0 µF Ceramic ILOAD = 1 00 µA V IN = 4 .3V to 5.3V V IN = 3.85V to 4.85V V OUT = 3 .33V FIGURE 2-25: Line Transient Response. CIN = 0 µF COUT = 1 µF Ceramic ILOAD = 100 µA FIGURE 2-27: Line Transient Response. V IN = 4.3V to 5.3V V OUT = 3.33V FIGURE 2-26: Line Transient Response. DS21813B-page 8  2003 Microchip Technology Inc. TC1017 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: Pin No. (5-Pin SC-70) 1 2 3 4 5 PIN FUNCTION TABLE Pin No. (5-Pin SOT-23) 3 4 2 5 1 Symbol SHDN NC GND VOUT Description Shutdown Control Input No Connect Ground Terminal Regulated Voltage Output Unregulated Supply Input VIN 3.1 Shutdown Control Input (SHDN) 3.3 Regulated Voltage Output (VOUT) The regulator is fully enabled when a logic-high is applied to SHDN. The regulator enters shutdown when a logic-low is applied to this input. During shutdown, output voltage falls to zero, and supply current is reduced to 0.05 µA (typ.) Bypass the regulated voltage output to GND with a minimum capacitance of 1 µF. A ceramic bypass capacitor is recommended for best performance. 3.4 Unregulated Supply Input (VIN) 3.2 Ground Terminal For best performance, it is recommended that the ground pin be tied to a ground plane. The minimum VIN has to meet two conditions in order to ensure that the output maintains regulation: VIN ≥ 2.7V and V IN ≥ [(VR + 2.5%) + VDROPOUT]. The maximum VIN should be less than or equal to 6V. Power dissipation may limit VIN to a lower potential in order to maintain a junction temperature below 125°C. Refer to Section 5.0, “Thermal Considerations”, for determining junction temperature. It is recommended that VIN be bypassed to GND with a ceramic capacitor.  2003 Microchip Technology Inc. DS21813B-page 9 TC1017 4.0 DETAILED DESCRIPTION The TC1017 is a precision, fixed-output, linear voltage regulator. The internal linear pass element is a P-Channel MOSFET. As with all P-Channel CMOS LDOs, there is a body drain diode with the cathode connected to VIN and the anode connected to VOUT (Figure 4-1). As is shown in Figure 4-1, the output voltage of the LDO is sensed and divided down internally to reduce external component count. The internal error amplifier has a fixed bandgap reference on the inverting input and the sensed output voltage on the non-inverting input. The error amplifier output will pull the gate voltage down until the inputs of the error amplifier are equal to regulate the output voltage. By sensing the current in the P-Channel MOSFET, the maximum current delivered to the load is limited to a typical average value of 120 mA, preventing excessive current from damaging the printed circuit board in the event of a shorted or faulted load. An internal thermal sensing device is used to monitor the junction temperature of the LDO. When the sensed temperature is over the set threshold of 160°C (typical), the P-Channel MOSFET is turned off. When the P-Channel is off, the power dissipation internal to the device is almost zero. The device cools until the junction temperature is approximately 150°C and the P-Channel is turned on. If the internal power dissipation is still high enough for the junction to rise to 160°C, it will again shut off and cool. The maximum operating junction temperature of the device is 125°C. Steadystate operation at or near the 160°C overtemperature point can lead to permanent damage of the device. The output voltage VOUT remains stable over the entire input operating voltage range (2.7V to 6.0V) and the entire load range (0 mA to 150 mA). The output voltage is sensed through an internal resistor divider and compared with a precision internal voltage reference. Several fixed-output voltages are available by changing the value of the internal resistor divider. Figure 4-2 shows a typical application circuit. The regulator is enabled any time the shutdown input pin is at or above VIH. It is shut down (disabled) any time the shutdown input pin is below VIL. For applications where the SHDN feature is not used, tie the SHDN pin directly to the input supply voltage source. While in shutdown, the supply current decreases to 0.006 µA (typical) and the P-Channel MOSFET is turned off. As shown in Figure 4-2, batteries have internal source impedance. An input capacitor is used to lower the input impedance of the LDO. In some applications, high input impedance can cause the LDO to become unstable. Adding more input capacitance can compensate for this. 1 SHDN Current Limit EA + VIN 5 Body Diode VOUT 4 2 NC VIN SHDN VREF Control Over Temp. 3 GND Error Amp R1 R2 Feedback Resistors FIGURE 4-1: TC1017 Block Diagram. 1 SHDN BATTERY RSOURCE 2 NC VIN 5 CIN 1 µF Ceramic TC1017 VOUT 4 3 GND Load COUT 1 µF Ceramic FIGURE 4-2: DS21813B-page 10 Typical Application Circuit.  2003 Microchip Technology Inc. TC1017 4.1 Input Capacitor 4.3 Turn-On Response Low input source impedance is necessary for the LDO to operate properly. When operating from batteries, or in applications with long lead length (> 10") between the input source and the LDO, some input capacitance is required. A minimum of 0.1 µF is recommended for most applications and the capacitor should be placed as close to the input of the LDO as is practical. Larger input capacitors will help reduce the input impedance and further reduce any high-frequency noise on the input and output of the LDO. The turn-on response is defined as two separate response categories, wake-up time (tWK) and settling time (tS). The TC1017 has a fast wake-up time (10 µsec, typical) when released from shutdown. See Figure 4-3 for the wake-up time designated as tWK. The wake-up time is defined as the time it takes for the output to rise to 2% of the VOUT value after being released from shutdown. The total turn-on response is defined as the settling time (tS) (see Figure 4-3). Settling time (inclusive with tWK) is defined as the condition when the output is within 98% of its fully-enabled value (32 µsec, typical) when released from shutdown. The settling time of the output voltage is dependent on load conditions and output capacitance on VOUT (RC response). The table below demonstrates the typical turn-on response timing for different input voltage power-up frequencies: VOUT = 2.85V, VIN = 5.0V, IOUT = 60 mA and COUT = 1 µF. Frequency 1000 Hz 500 Hz 100 Hz 50 Hz 10 Hz Typical (tWK) 5.3 µsec 5.9 µsec 9.8 µsec 14.5 µsec 17.2 µsec Typical (tS) 14 µsec 16 µsec 32 µsec 52 µsec 77 µsec 4.2 Output Capacitor A minimum output capacitance of 1 µF for the TC1017 is required for stability. The equivalent series resistance (ESR) requirements on the output capacitor are between 0 and 2 ohms. The output capacitor should be located as close to the LDO output as is practical. Ceramic materials X7R and X5R have low temperature coefficients and are well within the acceptable ESR range required. A typical 1 µF X5R 0805 capacitor has an ESR of 50 milli-ohms. Larger output capacitors can be used with the TC1017 to improve dynamic behavior and input ripple-rejection performance. Ceramic, aluminum electrolytic or tantalum capacitor types can be used. Since many aluminum electrolytic capacitors freeze at approximately –30°C, ceramic or solid tantalums are recommended for applications operating below –25°C. When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. VIH SHDN VIL 98% tS VOUT 2% tWK FIGURE 4-3: Wake-Up Time from Shutdown.  2003 Microchip Technology Inc. DS21813B-page 11 TC1017 5.0 5.1 THERMAL CONSIDERATIONS Thermal Shutdown Given the following example: VIN VOUT ILOAD TA Find: 1. Internal power dissipation: P DMAX = ( V IN_MAX – V OUT_MIN ) × I LOAD = ( 4.1V – 2.85 × ( 0.975 ) ) × 120mA = 158.5mW 2. Maximum allowable ambient temperature: × R θJ A T A_MAX = T J_MAX – P DM AX = ( 125 ° C – 158.5mW × 450 ° C/W ) = ( 125 ° C – 71 ° C ) = 54 ° C 3. Maximum allowable desired ambient: power dissipation at = = = = 3.0V to 4.1V 2.85V ±2.5% 120 mA (output current) 55°C (max. desired ambient) Integrated thermal protection circuitry shuts the regulator off when die temperature exceeds approximately 160°C. The regulator remains off until the die temperature drops to approximately 150°C. 5.2 Power Dissipation: SC-70 The TC1017 is available in the SC-70 package. The thermal resistance for the SC-70 package is approximately 450°C/W when the copper area used in the printed circuit board layout is similar to the JEDEC J51-7 high thermal conductivity standard or semi-G42-88 standard. For applications with larger or thicker copper area, the thermal resistance can be lowered. See AN792, “A Method to Determine How Much Power a SOT-23 Can Dissipate in an Application”, DS00792, for a method to determine the thermal resistance for a particular application. The TC1017 power dissipation capability is dependant upon several variables: input voltage, output voltage, load current, ambient temperature and maximum junction temperature. The absolute maximum steadystate junction temperature is rated at +125°C. The power dissipation within the device is equal to: T J_MAX – T A P D = ----------------------------R θ JA 125 ° C – 55 ° C = ---------------------------------450 ° C/W = 155mW In this example, the TC1017 dissipates approximately 158.5 mW and the junction temperature is raised 71°C over the ambient. The absolute maximum power dissipation is 155 mW when given a maximum ambient temperature of 55°C. Input voltage, output voltage or load current limits can also be determined by substituting known values in the power dissipation equations. Figure 5-1 and Figure 5-2 depict typical maximum power dissipation versus ambient temperature and typical maximum current versus ambient temperature, with a one volt input voltage to output voltage differential, respectively. 400 Power Dissipation (mW) 350 300 250 200 150 100 50 0 -40 -15 10 35 60 85 110 Ambient Temperature (°C) EQUATION: P D = ( V IN – V OUT ) × ILOAD + V IN × I G ND The VIN x IGND term is typically very small when compared to the (VIN-VOUT) x ILOAD term, simplifying the power dissipation within the LDO to be: EQUATION: P D = ( V IN – V OU T ) × I LO AD To determine the maximum power capability, the following equation is used: dissipation EQUATION: ( T J_MAX – T A_MAX ) P DMAX = ---------------------------------------------R θ JA Where: TJ_MAX = the maximum junction temperature allowed TA_MAX = the maximum ambient temperature RθJA = the thermal resistance from junction to air FIGURE 5-1: Power Dissipation vs. Ambient Temperature (SC-70 package). DS21813B-page 12  2003 Microchip Technology Inc. TC1017 EQUATION: 160 Maximum Current (mA) 140 120 100 80 60 40 20 0 -40 -15 10 35 60 85 110 Ambient Temperature (°C) VIN - VOUT = 1V ( T J_MAX – T A_MAX ) P D MAX = -----------------------------------------------R θJ A Where: TJ_MAX = the maximum junction temperature allowed TA_MAX = the maximum ambient temperature RθJA = the thermal resistance from junction to air FIGURE 5-2: Maximum Current vs. Ambient Temperature (SC-70 package). Given the following example: VIN = VOUT = ILOAD = TA = Find: 1. Internal power dissipation: P DMA X = ( V IN_MAX – V OUT_MIN ) × I LOAD = ( 4.1V – 2.85 × ( 0.975 ) ) × 120mA = 158.5mW 2. Maximum allowable ambient temperature: T A_MAX = T J_MAX – P DMAX × R θ JA = ( 125 ° C – 158.5mW × 255 ° C/W ) = ( 125 ° C – 40.5 ° C ) = 84.5 ° C power dissipation at 3.0V to 4.1V 2.85V ±2.5% 120 mA (output current) +85°C (max. desired ambient) 5.3 Power Dissipation: SOT-23 The TC1017 is also available in a SOT-23 package for improved thermal performance. The thermal resistance for the SOT-23 package is approximately 255°C/W when the copper area used in the printed circuit board layout is similar to the JEDEC J51-7 low thermal conductivity standard or semi-G42-88 standard. For applications with larger or thicker copper area, the thermal resistance can be lowered. See AN792, “A Method to Determine How Much Power a SOT-23 Can Dissipate in an Application”, DS00792, for a method to determine the thermal resistance for a particular application. The TC1017 power dissipation capability is dependant upon several variables: input voltage, output voltage, load current, ambient temperature and maximum junction temperature. The absolute maximum steadystate junction temperature is rated at +125°C. The power dissipation within the device is equal to: 3. Maximum allowable desired ambient: EQUATION: P D = ( V IN – V O UT ) × I LOAD + V IN × IGND The VIN x IGND term is typically very small when compared to the (VIN-VOUT) x ILOAD term, simplifying the power dissipation within the LDO to be: T J_MAX – T A P D = ----------------------------R θ JA 125 ° C – 85 ° C = ---------------------------------255 ° C/W = 157mW In this example, the TC1017 dissipates approximately 158.5 mWatts and the junction temperature is raised 40.5°C over the ambient. The absolute maximum power dissipation is 157 mW when given a maximum ambient temperature of +85°C. Input voltage, output voltage or load current limits can also be determined by substituting known values in the power dissipation equations. Figure 5-3 and Figure 5-4 depict typical maximum power dissipation versus ambient temperature and typical maximum current versus ambient temperature with a one volt input voltage to output voltage differential, respectively. EQUATION: P D = ( V IN – V OU T ) × I LO AD To determine the maximum power capability, the following equation is used: dissipation  2003 Microchip Technology Inc. DS21813B-page 13 TC1017 700 5.4 Layout Considerations Power Dissipation (mW) 600 500 400 300 200 100 0 -40 -15 10 35 60 85 110 The primary path for heat conduction out of the SC-70 or SOT-23 package is through the package leads. Using heavy wide traces at the pads of the device will facilitate the removal of the heat within the package, thus lowering the thermal resistance RθJA. By lowering the thermal resistance, the maximum internal power dissipation capability of the package is increased. SHDN VIN C1 U1 VOUT C2 Ambient Temperature (°C) FIGURE 5-3: Power Dissipation vs. Ambient Temperature (SOT-23 Package). 160 Maximum Current (mA) 140 120 100 80 60 40 20 0 VIN - VOUT = 1V GND FIGURE 5-5: Layout. SC-70 Package Suggested -40 -15 10 35 60 85 110 Ambient Temperature (°C) FIGURE 5-4: Maximum Current vs. Ambient Temperature (SOT-23 Package). DS21813B-page 14  2003 Microchip Technology Inc. TC1017 6.0 6.1 PACKAGE INFORMATION Package Marking Information 5-Pin SC-70 Part Number TC1017 - 1.8VLT TC1017 - 2.6VLT X X N Y W W TC1017 - 2.7VLT TC1017 - 2.8VLT TC1017 - 2.85VLT TOPSIDE BOTTOMSIDE TC1017 - 2.9VLT TC1017 - 3.0VLT TC1017 - 3.3VLT TC1017 - 4.0VLT Code CE CF CG CH CJ CK CL CM CP 5-Lead SOT-23 Part Number TC1017 - 1.8VCT TC1017 - 2.6VCT TC1017 - 2.7VCT Code DA DB DC DD DE DF DG DH DJ DANN TC1017 - 2.8VCT TC1017 - 2.85VCT TC1017 - 2.9VCT TC1017 - 3.0VCT TC1017 - 3.3VCT TC1017 - 4.0VCT Legend: XX...X Y YY WW NNN Note : Customer specific information* Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * Standard device marking consists of Microchip part number, year code, week code, and traceability code.  2003 Microchip Technology Inc. DS21813B-page 15 TC1017 5-Lead Plastic Small Outline Transistor (LT) (SC-70) E E1 D p B n 1 Q1 c A1 L Units Dimension Limits n p A A2 A1 E E1 D L Q1 c B INCHES NOM 5 .026 (BSC) MILLIMETERS* NOM 5 0.65 (BSC) 0.80 0.80 0.00 1.80 1.15 1.80 0.10 0.10 0.10 0.15 A2 A MIN MAX MIN MAX Number of Pins Pitch Overall Height Molded Package Thickness Standoff Overall Width Molded Package Width Overall Length Foot Length Top of Molded Pkg to Lead Shoulder Lead Thickness Lead Width .031 .031 .000 .071 .045 .071 .004 .004 .004 .006 .043 .039 .004 .094 .053 .087 .012 .016 .007 .012 1.10 1.00 0.10 2.40 1.35 2.20 0.30 0.40 0.18 0.30 *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" (0.127mm) per side. JEITA (EIAJ) Standard: SC-70 Drawing No. C04-061 DS21813B-page 16  2003 Microchip Technology Inc. TC1017 5-Lead Plastic Small Outline Transistor (OT) (SOT-23) E E1 p B p1 D n 1 α c A A2 β L φ A1 Units Dimension Limits n Number of Pins p Pitch p1 Outside lead pitch (basic) Overall Height Molded Package Thickness Standoff § Overall Width Molded Package Width Overall Length Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic A A2 A1 E E1 D L φ c B α β MIN INCHES* NOM 5 .038 .075 .046 .043 .003 .110 .064 .116 .018 5 .006 .017 5 5 MAX MIN .035 .035 .000 .102 .059 .110 .014 0 .004 .014 0 0 .057 .051 .006 .118 .069 .122 .022 10 .008 .020 10 10 MILLIMETERS NOM 5 0.95 1.90 0.90 1.18 0.90 1.10 0.00 0.08 2.60 2.80 1.50 1.63 2.80 2.95 0.35 0.45 0 5 0.09 0.15 0.35 0.43 0 5 0 5 MAX 1.45 1.30 0.15 3.00 1.75 3.10 0.55 10 0.20 0.50 10 10 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MO-178 Drawing No. C04-091  2003 Microchip Technology Inc. DS21813B-page 17 TC1017 NOTES: DS21813B-page 18  2003 Microchip Technology Inc. TC1017 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device XX Voltage Range X Temperature Range Examples: a) 150 mA, Tiny CMOS LDO with Shutdown, SC-70 package. TC1017-2.6VCTTR: 150 mA, Tiny CMOS LDO with Shutdown, SOT-23 package. TC1017-2.7VLTTR: 150 mA, Tiny CMOS LDO with Shutdown, SC-70 package. TC1017-2.8VCTTR: 150 mA, Tiny CMOS LDO with Shutdown, SOT-23 package. TC1017-2.85VLTTR: 150 mA, Tiny CMOS LDO with Shutdown, SC-70 package. TC1017-2.9VCTTR: 150 mA, Tiny CMOS LDO with Shutdown, SOT-23 package. TC1017-3.0VLTTR: 150 mA, Tiny CMOS LDO with Shutdown, SC-70 package. TC1017-3.3VCTTR: 150 mA, Tiny CMOS LDO with Shutdown, SOT-23 package. TC1017-4.0VLTTR: 150 mA, Tiny CMOS LDO with Shutdown, SC-70 package. TC1017-1.8VLTTR: b) Device: Voltage Range: TC1017: 150 mA Tiny CMOS LDO with Shutdown SC-70 Package CE = 1.8V CF = 2.6V CG = 2.7V CH = 2.8V CJ = 2.85V CK = 2.9V CL = 3.0V CM = 3.3V CP = 4.0V V = -40°C to +125°C SOT-23 Package DA = 1.8V DB = 2.6V DC = 2.7V DD = 2.8V DE = 2.85V DF = 2.9V DG = 3.0V DH = 3.3V DJ = 4.0V c) d) e) f) Temperature Range: Package: g) LTTR = 5-pin SC-70 (Tape and Reel) CTTR = 5-pin SOT-23 (Tape and Reel) h) i) Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  2003 Microchip Technology Inc. DS21813B-page 19 TC1017 NOTES: DS21813B-page 20  2003 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • • • Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” • • Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, MPLAB, PIC, PICmicro, PICSTART, PRO MATE and PowerSmart are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Application Maestro, dsPICDEM, dsPICDEM.net, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPIC, Select Mode, SmartSensor, SmartShunt, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2003, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro® 8 -bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified. 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B505A, Fullhope Plaza, No. 12 Hong Kong Central Rd. Qingdao 266071, China Tel: 86-532-5027355 Fax: 86-532-5027205 Netherlands P. A. De Biesbosch 14 NL-5152 SC Drunen, Netherlands Tel: 31-416-690399 Fax: 31-416-690340 Toronto 6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 India Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O’Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062 United Kingdom 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44-118-921-5869 Fax: 44-118-921-5820 07/28/03 Japan Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122 DS21813B-page 22  2003 Microchip Technology Inc.