TC1186-2.5VCT

TC1054/TC1055/TC1186 50mA, 100mA and 150mA CMOS LDOs with Shutdown and ERROR Output Features • Extremely Low Ground Current for Longer Battery Life • Very Low Dropout Voltage • Choice of 50mA (TC1054), 100mA (TC1055) and 150mA (TC1186) Output • High Output Voltage Accuracy • Standard or Custom Output Voltages • Power-Saving Shutdown Mode • ERROR Output Can Be Used as a Low Battery Detector, or Processor Reset Generator • Over Current and Over Temperature Protection • Space-Saving 5-Pin SOT-23A Package • Pin Compatible Upgrades for Bipolar Regulators Device Selection Table Part Number TC1054-xxVCT TC1055-xxVCT TC1186-xxVCT Package 5-Pin SOT-23A 5-Pin SOT-23A 5-Pin SOT-23A Junction Temp. Range -40°C to +125°C -40°C to +125°C -40°C to +125°C NOTE: xx indicates output voltages Available Output Voltages: 1.8, 2.5, 2.7, 2.8, 2.85, 3.0, 3.3, 3.6, 4.0, 5.0. Other output voltages are available. Please contact Microchip Technology Inc. for details. Package Type 5-Pin SOT-23A VOUT 5 ERROR 4 Applications • • • • • • • Battery Operated Systems Portable Computers Medical Instruments Instrumentation Cellular/GSM/PHS Phones Linear Post-Regulators for SMPS Pagers TC1054 TC1055 TC1186 1 VIN 2 GND 3 SHDN NOTE: 5-Pin SOT-23A is equivalent to the EIAJ (SC-74A) 2002 Microchip Technology Inc. DS21350B-page 1 © TC1054/TC1055/TC1186 General Description The TC1054, TC1055 and TC1186 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply current is typically 50µA at full load (20 to 60 times lower than in bipolar regulators). The devices’ key features include ultra low noise operation, very low dropout voltage – typically 85mV (TC1054); 180mV (TC1055); and 270mV (TC1186) at full load — and fast response to step changes in load. An error output (ERROR) is asserted when the devices are out-of-regulation (due to a low input voltage or excessive output current). ERROR can be used as a low battery warning or as a processor RESET signal (with the addition of an external RC network). Supply current is reduced to 0.5µA (max) and both V OUT and ERROR are disabled when the shutdown input is low. The devices incorporate both over-temperature and over-current protection. The TC1054, TC1055 and TC1186 are stable with an output capacitor of only 1µF and have a maximum output current of 50mA, 100mA and 150mA, respectively. For higher output current regulators, please see the TC1173 (IOUT = 300mA) data sheet. Typical Application 1 5 + 1µF VIN VIN VOUT VOUT 2 TC1054 TC1055 TC1186 GND 3 SHDN ERROR 4 ERROR Shutdown Control (from Power Control Logic) © DS21350B-page 2 2002 Microchip Technology Inc. TC1054/TC1055/TC1186 1.0 ELECTRICAL CHARACTERISTICS *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings* Input Voltage......................................................... 6.5V Output Voltage ...........................(-0.3V) to (VIN + 0.3V) Power Dissipation ............... Internally Limited (Note 6) Maximum Voltage on Any Pin ........ VIN +0.3V to -0.3V Operating Temperature Range ......-40°C < TJ < 125°C Storage Temperature ......................... -65°C to +150°C TC1054/TC1055/TC1186 ELECTRICAL SPECIFICATIONS Electrical Characteristics: VIN = VOUT + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH , TA = 25°C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Symbol V IN IOUTMAX Parameter Input Operating Voltage Maximum Output Current Min 2.7 50 100 150 VR – 2.5% — — — TC1054; TC1055 TC1186 — — — — — — — — — — — — — — — Typ — — — — 20 40 0.05 0.5 0.5 2 65 85 180 270 50 0.05 64 300 0.04 160 10 260 Max 6.0 — — — — — 0.35 2 3 — — 120 250 400 80 0.5 — 450 — — — — Units V mA Test Conditions Note 8 TC1054 TC1055 TC1186 Note 1 Note 2 (VR + 1V) ≤ VIN ≤ 6V IL = 0.1mA to IOUTMAX IL = 0.1mA to IOUTMAX (Note 3) IL = 100µA IL = 20mA IL = 50mA IL = 100mA IL = 150mA (Note 4) SHDN = VIH, IL = 0 SHDN = 0V FRE ≤ 1kHz VOUT = 0V Notes 5, 6 VOUT TCVOUT ∆VOUT/∆VIN ∆VOUT/VOUT Output Voltage VOUT Temperature Coefficient Line Regulation Load Regulation VR ±0.5% VR + 2.5% V ppm/°C % % V IN-V OUT Dropout Voltage mV TC1055; TC1186 TC1186 IIN IINSD PSRR IOUTSC ∆VOUT/∆PD TSD ∆TSD eN Note 1: 2: 3: Supply Current Shutdown Supply Current Power Supply Rejection Ratio Output Short Circuit Current Thermal Regulation Thermal Shutdown Die Temperature Thermal Shutdown Hysteresis Output Noise µA µA dB mA V/W °C °C nV/√Hz IL = IOUT MAX VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. TC VOUT = (VOUTMAX – VOUTMIN)x 10 6 VOUT x ∆T Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θ JA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0 Thermal Considerations for more details. Hysteresis voltage is referenced by VR. The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1mA to IOUTMAX . 4: 5: 6: 7: 8: 2002 Microchip Technology Inc. DS21350B-page 3 © TC1054/TC1055/TC1186 TC1054/TC1055/TC1186 ELECTRICAL SPECIFICATION S (CONTINUED) Electrical Characteristics: VIN = VOUT + 1V, IL = 100µA, C L = 3.3µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Symbol SHDN Input VIH VIL VINMIN VOL VTH VHYS Note 1: 2: 3: Parameter Min Typ Max Units Test Conditions SHDN Input High Threshold SHDN Input Low Threshold 45 — — — — 15 %VIN %VIN V mV V mV VIN = 2.5V to 6.5V VIN = 2.5V to 6.5V ERROR Output Minimum VIN Operating Voltage Output Logic Low Voltage 1.0 — — — — — 0.95 x VR 50 — 400 — — 1 mA Flows to ERROR See Figure 3-2 Note 7 ERROR Threshold Voltage ERROR Positive Hysteresis VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. TC VOUT = (VOUTMAX – VOUTMIN )x 10 6 VOUT x ∆T Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0 Thermal Considerations for more details. Hysteresis voltage is referenced by VR. The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1mA to I OUT MAX. 4: 5: 6: 7: 8: © DS21350B-page 4 2002 Microchip Technology Inc. TC1054/TC1055/TC1186 2.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 2-1. TABLE 2-1: Pin No. (5-Pin SOT-23A) 1 2 3 PIN FUNCTION TABLE Symbol VIN GND SHDN Unregulated supply input. Ground terminal. Shutdown control input. The regulator is fully enabled when a logic high is applied to this input. The regulator enters shutdown when a logic low is applied to this input. During shutdown, output voltage falls to zero, ERROR is open circuited and supply current is reduced to 0.5µA (max). Out-of-Regulation Flag. (Open drain output). This output goes low when VOUT is out-oftolerance by approximately – 5%. Regulated voltage output. Description 4 5 ERROR VOUT 2002 Microchip Technology Inc. DS21350B-page 5 © TC1054/TC1055/TC1186 3.0 DETAILED DESCRIPTION 3.1 ERROR Open Drain Output The TC1054, TC1055 and TC1186 are precision fixed output voltage regulators. (If an adjustable version is desired, please see the TC1070/TC1071/TC1187 data sheet.) Unlike bipolar regulators, the TC1054, TC1055 and TC1186 supply current does not increase with load current. In addition, VOUT remains stable and within regulation over the entire 0mA to IOUTMAX operating load current range, (an important consideration in RTC and CMOS RAM battery back-up applications). Figure 3-1 shows a typical application circuit. The regulator is enabled any time the shutdown input (SHDN) is at or above VIH, and shutdown (disabled) when SHDN is at or below VIL. SHDN may be controlled by a CMOS logic gate, or I/O port of a microcontroller. If the SHDN input is not required, it should be connected directly to the input supply. While in shutdown, supply current decreases to 0.05µA (typical), VOUT falls to zero volts, and ERROR is opencircuited. ERROR is driven low whenever VOUT falls out of regulation by more than – 5% (typical). This condition may be caused by low input voltage, output current limiting, or thermal limiting. The ERROR threshold is 5% below rated VOUT regardless of the programmed output voltage value (e.g. ERROR = VOL at 4.75V (typ.) for a 5.0V regulator and 2.85V (typ.) for a 3.0V regulator). ERROR output operation is shown in Figure 3-2. Note that ERROR is active when VOUT falls to VTH, and inactive when VOUT rises above VTH by V HYS. As shown in Figure 3-1, ERROR can be used as a battery low flag, or as a processor RESET signal (with the addition of timing capacitor C2). R1 x C2 should be chosen to maintain ERROR below VIH of the processor RESET input for at least 200 msec to allow time for the system to stabilize. Pull-up resistor R1 can be tied to VOUT, VIN or any other voltage less than (VIN + 0.3V). FIGURE 3-1: TYPICAL APPLICATION CIRCUIT + VIN 1µF VOUT VOUT + 1µF C1 FIGURE 3-2: ERROR OUTPUT OPERATION VOUT VTH HYSTERESIS (VH) + Battery TC1054 TC1055 TC1186 GND ERROR V+ SHDN Shutdown Control (to CMOS Logic or Tie to VIN if unused) ERROR R1 1M BATTLOW or RESET 0.2µF C2 VIH VOL C2 Required Only if ERROR is used as a Processor RESET Signal (See Text) 3.2 Output Capacitor A 1µF (min) capacitor from VOUT to ground is recommended. The output capacitor should have an effective series resistance greater than 0.1Ω and less than 5.0Ω, and a resonant frequency above 1MHz. A 1µF capacitor should be connected from V IN to GND if there is more than 10 inches of wire between the regulator and the AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or tantalum capacitor types can be used. (Since many aluminum electrolytic capacitors freeze at approximately -30°C, solid tantalums are recommended for applications operating below -25°C.) When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. © DS21350B-page 6 2002 Microchip Technology Inc. TC1054/TC1055/TC1186 4.0 4.1 THERMAL CONSIDERATIONS Thermal Shutdown Equation 4-1 can be used in conjunction with Equation 4-2 to ensure regulator thermal operation is within limits. For example: Given: VINMAX = 3.0V ±5% VOUTMIN = 2.7V – 2.5% ILOADMAX = 40mA TJMAX TAMAX = 125°C = 55°C Integrated thermal protection circuitry shuts the regulator off when die temperature exceeds 160°C. The regulator remains off until the die temperature drops to approximately 150°C. 4.2 Power Dissipation The amount of power the regulator dissipates is primarily a function of input and output voltage, and output current. The following equation is used to calculate worst case actual power dissipation: Find: 1. Actual power dissipation 2. Maximum allowable dissipation Actual power dissipation: PD ≈ (VINMAX – VOUTMIN)ILOADMAX = [(3.0 x 1.05) – (2.7 x .975)]40 x 10–3 = 20.7mW Maximum allowable power dissipation: PDMAX = (TJMAX – TAMAX) θJA = (125 – 55) 220 = 318mW In this example, the TC1054 dissipates a maximum of 20.7mW; below the allowable limit of 318mW. In a similar manner, Equation 4-1 and Equation 4-2 can be used to calculate maximum current and/or input voltage limits. EQUATION 4-1: PD ≈ (VINMAX – VOUTMIN)ILOADMAX Where: PD VINMAX VOUTMIN ILOADMAX = Worst case actual power dissipation = Maximum voltage on VIN = Minimum regulator output voltage = Maximum output (load) current The maximum allowable power dissipation (Equation 4-2) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (TJMAX) and the thermal resistance from junction-to-air (θJA). The 5-Pin SOT-23A package has a θJA of approximately 220°C/Watt. EQUATION 4-2: PDMAX= (TJMAX – TAMAX) θJA Where all terms are previously defined. 4.3 Layout Considerations The primary path of heat conduction out of the package is via the package leads. Therefore, layouts having a ground plane, wide traces at the pads, and wide power supply bus lines combine to lower θJA and therefore, increase the maximum allowable power dissipation limit. 2002 Microchip Technology Inc. DS21350B-page 7 © TC1054/TC1055/TC1186 5.0 Note: TYPICAL CHARACTERISTICS (Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C) The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 0.020 0.018 Dropout Voltage vs. Temperature (VOUT = 3.3V) ILOAD = 10mA 0.100 0.090 DROPOUT VOLTAGE (V) Dropout Voltage vs. Temperature (VOUT = 3.3V) ILOAD = 50mA DROPOUT VOLTAGE (V) 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.000 -40 -20 0 20 50 TEMPERATURE (°C) 70 125 0.080 0.070 0.060 0.050 0.040 0.030 0.020 0.010 0.000 -40 -20 0 20 50 TEMPERATURE (°C) 70 125 CIN = 1µF COUT = 1µF CIN = 1µF COUT = 1µF 0.200 0.180 DROPOUT VOLTAGE (V) Dropout Voltage vs. Temperature (VOUT = 3.3V) ILOAD = 100mA DROPOUT VOLTAGE (V) 0.300 0.250 0.200 0.150 0.100 0.050 0.000 Dropout Voltage vs. Temperature (VOUT = 3.3V) ILOAD = 150mA 0.160 0.140 0.120 0.100 0.080 0.060 0.040 0.020 0.000 -40 -20 0 20 50 70 125 CIN = 1µF COUT = 1µF CIN = 1µF COUT = 1µF -40 -20 0 20 50 TEMPERATURE (°C) 70 125 TEMPERATURE (°C) 90 80 Ground Current vs. VIN (VOUT = 3.3V) ILOAD = 10mA GND CURRENT (µA) 90 80 70 60 50 40 30 20 10 0 Ground Current vs. VIN (VOUT = 3.3V) ILOAD = 100mA GND CURRENT (µA) 70 60 50 40 30 20 10 0 CIN = 1µF COUT = 1µF 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V) CIN = 1µF COUT = 1µF 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V) © DS21350B-page 8 2002 Microchip Technology Inc. TC1054/TC1055/TC1186 5.0 TYPICAL CHARACTERISTICS (CONTINUED) (Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C) 80 70 GND CURRENT (µA) Ground Current vs. VIN (VOUT = 3.3V) ILOAD = 150mA 3.5 VOUT vs. VIN (VOUT = 3.3V) ILOAD = 0 3 2.5 60 VOUT (V) 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V) 2 1.5 1 CIN = 1µF COUT = 1µF 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 CIN = 1µF COUT = 1µF 5.5 6 6.5 7 VIN (V) 3.5 3.0 2.5 VOUT (V) VOUT vs. VIN (VOUT = 3.3V) 3.320 3.315 3.310 3.305 Output Voltage vs. Temperature (VOUT = 3.3V) ILOAD = 10mA ILOAD = 100mA 2.0 1.5 1.0 0.5 0.0 0 VOUT (V) 3.300 3.295 3.290 3.285 CIN = 1µF COUT = 1µF 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 VIN (V) 3.280 3.275 -40 CIN = 1µF COUT = 1µF VIN = 4.3V -20 -10 0 20 40 85 125 TEMPERATURE (°C) 3.290 3.288 3.286 Output Voltage vs. Temperature (VOUT = 3.3V) ILOAD = 150mA VOUT (V) 3.284 3.282 3.280 3.278 3.276 3 .274 -40 -20 -10 0 20 40 85 125 CIN = 1µF COUT = 1µF VIN = 4.3V TEMPERATURE (°C) 2002 Microchip Technology Inc. DS21350B-page 9 © TC1054/TC1055/TC1186 5.0 TYPICAL CHARACTERISTICS (CONTINUED) (Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C) 5.025 5.020 5.015 Output Voltage vs. Temperature (VOUT = 5V) ILOAD = 10mA 4.994 4.992 4.990 4.988 Output Voltage vs. Temperature (VOUT = 5V) ILOAD = 150mA VOUT (V) 5.005 5.000 4.995 4.990 4.985 VOUT (V) VIN = 6V CIN = 1µF COUT = 1µF -40 -20 -10 0 20 40 85 125 5.010 4.986 4.984 4.982 4.980 4.978 4.976 4.974 -40 -20 -10 0 20 40 85 125 VIN = 6V CIN = 1µF COUT = 1µF TEMPERATURE (°C) TEMPERATURE (°C) 70 60 Temperature vs. Quiescent Current (VOUT = 5V) ILOAD = 10mA GND CURRENT (µA) 80 70 60 50 40 30 20 10 0 Temperature vs. Quiescent Current (VOUT = 5V) ILOAD = 150mA GND CURRENT (µA) 50 40 30 20 10 0 -40 -20 -10 0 20 40 TEMPERATURE (°C) 85 125 VIN = 6V CIN = 1µF COUT = 1µF VIN = 6V CIN = 1µF COUT = 1µF -40 -20 -10 0 20 40 85 125 TEMPERATURE (°C) Output Noise vs. Frequency 10.0 RLOAD = 50Ω COUT = 1µF CIN = 1µF 1000 Stability Region vs. Load Current COUT = 1µF to 10µF -30 -35 -40 100 COUT ESR (Ω) 10 1 Stable Region Stable Region PSRR (dB) -45 -50 -55 -60 -65 0.1 -70 -75 Power Supply Rejection Ratio IOUT = 10mA VINDC = 4V VINAC = 100mVp-p VOUT = 3V CIN = 0 COUT = 1µF NOISE (µV/√Hz) 1.0 0.1 0.0 0.01K 0.1K 0.01 1K 10K 100K 1000K FREQUENCY (Hz) 0 10 20 30 40 50 60 70 80 90 100 LOAD CURRENT (mA) -80 0.01K 0.1K 1K 10K 100K 1000K FREQUENCY (Hz) © DS21350B-page 10 2002 Microchip Technology Inc. TC1054/TC1055/TC1186 5.0 TYPICAL CHARACTERISTICS (CONTINUED) Measure Rise Time of 3.3V LDO Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 4.3V, Temp = 25°C, Fall Time = 184µS Measure Fall Time of 3.3V LDO Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 4.3V, Temp = 25°C, Fall Time = 52µS VSHDN VSHDN VOUT VOUT Measure Rise Time of 5.0V LDO Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 6V, Temp = 25°C, Fall Time = 192µS Measure Fall Time of 5.0V LDO Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 6V, Temp = 25°C, Fall Time = 88µS VSHDN VSHDN VOUT VOUT Thermal Shutdown Response of 5.0V LDO Conditions: VIN = 6V, CIN = 0µF, COUT = 1µF VOUT ILOAD was increased until temperature of die reached about 160°C, at which time integrated thermal protection circuitry shuts the regulator off when die temperature exceeds approximately 160°C. The regulator remains off until die temperature drops to approximately 150°C. 2002 Microchip Technology Inc. DS21350B-page 11 © TC1054/TC1055/TC1186 6.0 6.1 PACKAGING INFORMATION Package Marking Information “1” & “2” = part number code + temperature range and voltage (V) 1.8 2.5 2.7 2.8 2.85 3.0 3.3 3.6 4.0 5.0 TC1054 Code CY C1 C2 CZ C8 C3 C5 C9 C0 C7 TC1055 Code DY D1 D2 DZ D8 D3 D5 D9 D0 D7 TC1186 Code PY P1 P2 PZ P8 P3 P5 P9 P0 P7 “3” represents year and quarter code “4” represents lot ID number 6.2 Taping Form Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices User Direction of Feed Device Marking W PIN 1 P Standard Reel Component Orientation TR Suffix Device (Mark Right Side Up) Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 5-Pin SOT-23A 8 mm 4 mm 3000 7 in © DS21350B-page 12 2002 Microchip Technology Inc. TC1054/TC1055/TC1186 6.3 Package Dimensions SOT-23A-5 .075 (1.90) REF. .122 (3.10) .098 (2.50) .020 (0.50) .012 (0.30) PIN 1 .122 (3.10) .106 (2.70) .057 (1.45) .035 (0.90) .006 (0.15) .000 (0.00) .071 (1.80) .059 (1.50) .037 (0.95) REF. 10° MAX. .024 (0.60) .004 (0.10) .010 (0.25) .004 (0.09) Dimensions: inches (mm) 2002 Microchip Technology Inc. DS21350B-page 13 © TC1054/TC1055/TC1186 NOTES: © DS21350B-page 14 2002 Microchip Technology Inc. TC1054/TC1055/TC1186 SALES AND SUPPORT Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  2002 Microchip Technology Inc. DS21350B-page 15 TC1054/TC1055/TC1186 NOTES: DS21350B-page 16  2002 Microchip Technology Inc. TC1054/TC1055/TC1186 Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. 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Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro ® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified. 2002 Microchip Technology Inc. DS21350B-page 17 © WORLDWIDE SALES AND SERVICE AMERICAS Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com ASIA/PACIFIC Australia Microchip Technology Australia Pty Ltd Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 Japan Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Rocky Mountain 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-7456 China - Beijing Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104 Korea Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934 Atlanta 500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770-640-0034 Fax: 770-640-0307 Singapore Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850 Boston 2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692-3821 China - Chengdu Microchip Technology Consulting (Shanghai) Co., Ltd., Chengdu Liaison Office Rm. 2401, 24th Floor, Ming Xing Financial Tower No. 88 TIDU Street Chengdu 610016, China Tel: 86-28-86766200 Fax: 86-28-86766599 Taiwan Microchip Technology Taiwan 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139 Chicago 333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 630-285-0071 Fax: 630-285-0075 Dallas 4570 Westgrove Drive, Suite 160 Addison, TX 75001 Tel: 972-818-7423 Fax: 972-818-2924 China - Fuzhou Microchip Technology Consulting (Shanghai) Co., Ltd., Fuzhou Liaison Office Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 350001, China Tel: 86-591-7503506 Fax: 86-591-7503521 EUROPE Denmark Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910 Detroit Tri-Atria Office Building 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Tel: 248-538-2250 Fax: 248-538-2260 China - Shanghai Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060 Kokomo 2767 S. Albright Road Kokomo, Indiana 46902 Tel: 765-864-8360 Fax: 765-864-8387 France Microchip Technology SARL Parc d’Activite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Los Angeles 18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 949-263-1888 Fax: 949-263-1338 China - Shenzhen Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 1315, 13/F, Shenzhen Kerry Centre, Renminnan Lu Shenzhen 518001, China Tel: 86-755-2350361 Fax: 86-755-2366086 New York 150 Motor Parkway, Suite 202 Hauppauge, NY 11788 Tel: 631-273-5305 Fax: 631-273-5335 Germany Microchip Technology GmbH Gustav-Heinemann Ring 125 D-81739 Munich, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44 San Jose Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955 China - Hong Kong SAR Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 Italy Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883 Toronto 6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 India Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O’Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062 United Kingdom Microchip Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820 05/01/02 © DS21350B-page 18 2002 Microchip Technology Inc. *B05312SD*