TC1300VUA

M Features • LDO with Integrated Microcontroller Reset Monitor Functionality • Low Input Supply Current (80 µA, typical) • Very Low Dropout Voltage • 10 µsec (typ.) Wake-Up Time from SHDN • 300 mA Output Current • Standard or Custom Output and Detected Voltages • Power-Saving Shutdown Mode • Bypass Input for Quiet Operation • Separate Input for Detected Voltage • 140 msec Minimum RESET Output Duration • Space-Saving MSOP Package • Specified Junction Temperature Range: -40°C to +125°C TC1300 General Description The TC1300 combines a low dropout regulator and a microcontroller reset monitor in an 8-Pin MSOP package. Total supply current is 80 µA (typical), 20 to 60 times lower than bipolar regulators. The TC1300 has a precise output with a typical accuracy of ±0.5%. Other key features include low noise operation, low dropout voltage and internal feedforward compensation for fast response to step changes in load. The TC1300 has both over-temperature and over-current protection. When the shutdown control (SHDN) is low, the regulator output voltage falls to zero, RESET output remains valid and supply current is reduced to 30 µA (typical). The TC1300 is rated for 300 mA of output current and stable with a 1 µF output capacitor. An active-low RESET is asserted when the detected voltage (VDET) falls below the reset voltage threshold. The RESET output remains low for 300 msec (typical) after VDET rises above reset threshold. The TC1300 also has a fast wake-up response time (10 µsec., typical) when released from shutdown. 300 mA CMOS LDO with Shutdown, Bypass and Independent Delayed Reset Function Applications • • • • • Battery-Operated Systems Portable Computers Medical Instruments Pagers Cellular / GSM / PHS Phones Typical Application Circuit RESET 1 RESET VDET VIN 8 VDET Related Literature • AN765, “Using Microchip’s Micropower LDOs”, DS00765. • AN766, “Pin-Compatible CMOS Upgrades to Bipolar LDOs”, DS00766. • AN792, “A Method to Determine How Much Power a SOT23 Can Dissipate in an Application”, DS00792. VOUT 2 C1 1 µF 3 4 CBYPASS 470 pF (Optional) VOUT TC1300 GND Bypass 7 C2 1 µF 6 Battery + NC SHDN 5 Package Type MSOP RESET 1 VOUT 2 GND 3 Bypass 4 TC1300VUA 8 VDET 7 VIN 6 NC 5 SHDN Shutdown Control (from Power Control Logic)  2002 Microchip Technology Inc. DS21385C-page 1 TC1300 1.0 ELECTRICAL CHARACTERISTICS PIN DESCRIPTIONS Pin RESET Description RESET output remains low while V DET is below the reset voltage threshold and for 300 msec after VDET rises above reset theshold. Regulated Voltage Output Ground Terminal Reference Bypass Input. Connecting an optional 470 pF to this input further reduces output noise. Shutdown Control Input. The regulator is fully enabled when a logic high is applied to this input. The regulator enters shutdown when a logic low is applied to this input. During shutdown, regulator output voltage falls to zero, RESET output remains valid and supply current is reduced to 30 µA (typ.). No connect Power Supply Input Detected Input Voltage. VDET and V IN can be connected together. Absolute Maximum Ratings* Input Voltage ....................................................................6.5V Output Voltage ................................. (VSS - 0.3) to (VIN + 0.3) Power Dissipation ......................... Internally Limited (Note 6) Operating Junction Temperature, TJ ....... – 40°C < TJ< 150°C Maximum Junction Temperature, Tj .............................. 150°C Storage Temperature .................................. – 65°C to +150°C Maximum Voltage on Any Pin ............. (VSS-0.3) to (VIN +0.3) *Notice: Stresses above those listed under “maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. VOUT GND Bypass SHDN NC VIN VDET ELECTRICAL CHARACTERISTICS VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 µF, SHDN > VIH , TA = 25°C, unless otherwise noted. BOLDFACE type specifications apply for junction temperature (Note 8) of -40°C to +125°C. Parameters Input Operating Voltage Maximum Output Current Output Voltage VOUT Temperature Coefficient Line Regulation Load Regulation Sym VIN IOUT MAX V OUT ∆VOUT/∆T ∆VOUT/∆VIN ∆VOUT/VOUT Min 2.7 300 — VR - 2.5% — — — Typ — — VR ± 0.5% — 25 0.02 0.5 Max 6.0 — — VR + 2.5% — 0.35 2.0 Units V mA V Note 1 Note 7 Conditions ppm/°C Note 2 % % (VR + 1V) < VIN < 6V IL = 0.1 mA to IOUTMAX, Note 3 Note 1: VR is the regulator output voltage setting. 2: TCV 6 ( V O UTMAX – V OUTMIN ) × 10 = ------------------------------------------------------------------------------------OUT V × ∆T OUT 3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V differential. 5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec. 6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0, “Thermal Considerations”, of this data sheet for more details. 7: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and V IN ≥ (VR + VDROPOUT). 8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. DS21385C-page 2  2002 Microchip Technology Inc. TC1300 ELECTRICAL CHARACTERISTICS (CONTINUED) VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 µF, SHDN > VIH , TA = 25°C, unless otherwise noted. BOLDFACE type specifications apply for junction temperature (Note 8) of -40°C to +125°C. Parameters Dropout Voltage (Note 4) Sym VIN –VOUT Min — Typ 1 70 210 80 30 60 800 0.04 900 Max 30 130 390 160 60 — 1200 — — Units mV Conditions IL = 0.1 mA IL = 100 mA IL = 300 mA SHDN = VIH SHDN = 0V f ≤ 1 kHz, CBYPASS = 1 nF VOUT = 0V Note 5 f < 1 kHz, COUT = 1 µF, RLOAD = 50 Ω, CBYPASS = 1 nF CIN = 1 µF, VIN = 5V, COUT = 4.7 µF, IL = 30 mA, See Figure 3-2 CIN = 1 µF, VIN = 5V COUT = 4.7 µF IL = 30 mA, See Figure 3-2 Supply Current Shutdown Supply Current Power Supply Rejection Ratio Output Short Circuit Current Thermal Regulation Output Noise ISS1 ISS2 PSRR IOUT SC ∆VOUT /∆PD eN — — — — — — µA µA dB mA %/W nV/Hz Wake-Up Time (from Shutdown Mode) Settling Time (from Shutdown Mode) Thermal Shutdown Die Temperature Thermal Shutdown Hysteresis Thermal Resistance Junction to Case SHDN Input High Threshold SHDN Input Low Threshold tWK — 10 20 µsec ts — 50 — µsec TSD THYS RthetaJA VIH V IL — — — 45 — 150 10 200 — — — — — — 15 °C °C °C/Watt EIA/JEDEC JESD51-751-7 4Layer Board %V IN %V IN VIN = 2.5V to 6.0V VIN = 2.5V to 6.0V Note 1: VR is the regulator output voltage setting. 2: TCV 6 (V –V ) × 10 O UTMAX OUTMIN = ------------------------------------------------------------------------------------OUT V × ∆T OUT 3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V differential. 5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec. 6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0, “Thermal Considerations”, of this data sheet for more details. 7: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and V IN ≥ (VR + VDROPOUT). 8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant.  2002 Microchip Technology Inc. DS21385C-page 3 TC1300 ELECTRICAL CHARACTERISTICS (CONTINUED) VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 µF, SHDN > VIH , TA = 25°C, unless otherwise noted. BOLDFACE type specifications apply for junction temperature (Note 8) of -40°C to +125°C. Parameters RESET Output Voltage Range Reset Threshold VDET VTH 1.0 1.2 2.59 2.55 2.36 2.32 Reset Threshold Tempco VDET to Reset Delay Reset Active Timeout Period RESET Output Voltage Low RESET Output Voltage High ∆VTH / ∆T tRPD tRPU VOL VOH — — 140 — 0.8 VDET — — 2.63 — 2.40 — 30 160 300 — — 6.0 6.0 2.66 2.70 2.43 2.47 — — 560 0.3 — ppm/°C µsec msec V V VDET = VTH min, ISINK = 1.2 mA VDET > VTH max, ISOURCE = 500 µA VDET = VTH to (VTH – 100 mV) V V TA = 0°C to +70°C TA = – 40°C to +125°C TC1300R-XX, TA = +25°C TC1300R-XX, TA = – 40°C to +125°C TC1300Y-XX, TA = +25°C TC1300Y-XX, TA = – 40°C to +125°C Sym Min Typ Max Units Conditions Note 1: VR is the regulator output voltage setting. 2: 6 ( V O UTMAX – V OUTMIN ) × 10 TCV OUT = ------------------------------------------------------------------------------------V OUT × ∆T 3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V differential. 5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec. 6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0, “Thermal Considerations”, of this data sheet for more details. 7: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and V IN ≥ (VR + VDROPOUT). 8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. DS21385C-page 4  2002 Microchip Technology Inc. TC1300 2.0 Note: TYPICAL CHARACTERISTICS The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Junction temperature (T J) is approximated by soaking the device under test at an ambient temperature equal to the desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the Ambient temperature is not significant. 0.035 450 400 350 300 250 200 150 100 50 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 Line Regulation (%) 0.030 0.025 0.020 0.015 0.010 0.005 0.000 -40 -25 -10 5 20 35 50 VOUT = 3.0V VIN = 3.5V to 6.0V 65 80 95 110 125 Junction Temperature (°C) Reset Active Time-out Period (ms) Junction Temperature (°C) FIGURE 2-1: Temperature. 0.14 Supply Current (mA) 0.12 0.10 0.08 0.06 0.04 0.02 0.00 -40 -25 -10 5 Line Regulation vs. FIGURE 2-4: Reset Active Time-out Period vs. Temperature. 10.00 VOUT = 3.0V VOUT = 2.5V Output Noise (µV/lHz) VOUT = 5.0V VIN = VOUT + 1V 1.00 RLOAD = 50 Ohms COUT = 1 µ F 0.10 20 35 50 65 80 95 110 125 0.01 0.01 0.10 1 1.00 10 10.00 100 100.00 1000 1000.00 Junction Temperature (°C) Frequency (kHz) FIGURE 2-2: Temperature. 2.500 2.499 Supply Current vs. FIGURE 2-5: Output Noise vs. Frequency. 0.30 VOUT = 2.5V TJ = -40°C TJ = +125°C TJ = +25°C Output Voltage (V) 2.498 2.497 2.496 2.495 2.494 2.493 2.492 2.491 -40 -25 -10 5 20 35 50 65 80 95 110 125 Dropout Voltage (V) 0.25 0.20 0.15 0.10 0.05 0.00 0 100 VIN = VOUT + 1V IOUT = 100 µA VOUT = 2.5V 200 300 400 Junction Temperature (°C) Load Current (mA) FIGURE 2-3: Temperature. Normalized VOUT vs. FIGURE 2-6: Current (2.5V). Dropout Voltage vs. Load  2002 Microchip Technology Inc. DS21385C-page 5 TC1300 2.0 TYPICAL CHARACTERISTICS (CON’T) Junction temperature (T J) is approximated by soaking the device under test at an ambient temperature equal to the desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the Ambient temperature is not significant. 60 Power Supply Ripple Rejection (dB) 45 Dropout Voltage (V) 30 VIN = 3.8V VOUT = 2.8V IOUT = 50 mA COUT = 10 µF COUTesr = 0.25 CBYPASS = 0 µF 0.3 0.25 0.2 0.15 0.1 0.05 0 VOUT = 5.0V TJ = +125°C TJ = -40°C TJ = +25°C 15 0 10 100 1k 1000 10k 10000 100k 100000 1M 1000000 0 100 200 300 400 Frequency (Hz) Load Current (mA) FIGURE 2-7: Power Supply Rejection Ratio vs. Frequency. 2.6330 2.6325 2.6320 2.6315 2.6310 2.6305 2.6300 2.6295 2.6290 2.6285 2.6280 2.6275 -40 -25 -10 5 20 35 50 65 80 95 110 125 FIGURE 2-10: Current (5.0V). Dropout Voltage vs. Load Reset Voltage Threshold (V) Junction Temperature (°C) FIGURE 2-8: Reset Voltage Threshold vs. Junction Temperature. 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 -40 -25 -10 5 20 35 50 65 80 95 110 125 FIGURE 2-11: Wake-Up Response Time. VIN = VOUT + 1V VOUT = 3.0V VDET to RESET Delay Time (µS) Load Regulation (1 mA to 300 mA) % 300 250 200 150 100 50 0 -40 -25 -10 5 20 35 50 65 80 95 110 125 10 mV Overdrive 100 mV Overdrive VOUT = 2.5V VOUT = 5.0V Junction Temperature (°C) Junction Temperature (°C) FIGURE 2-9: Temperature. Load Regulation vs. FIGURE 2-12: Temperature. VDET to Reset Delay vs. DS21385C-page 6  2002 Microchip Technology Inc. TC1300 2.0 TYPICAL CHARACTERISTICS (CON’T) Junction temperature (T J) is approximated by soaking the device under test at an ambient temperature equal to the desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the Ambient temperature is not significant. FIGURE 2-13: Load Transient Response 1 µF Output Capacitor. FIGURE 2-16: Line Transient Response 10 µF Output Capacitor. 0.30 0.25 VDET = VTH - 20 mV ISINK = 3.2 mA RESET VOL (V) 0.20 0.15 0.10 0.05 0.00 -40 -25 -10 5 20 35 50 65 80 95 110 125 ISINK = 1.2 mA Junction Temperature (°C) FIGURE 2-14: Line Transient Response 1 µF Output Capacitor. FIGURE 2-17: RESET Output Voltage Low vs. Junction Temperature. 3.960 3.950 ISOURCE = 500 µA RESET VOH (V) 3.940 3.930 3.920 3.910 3.900 3.890 -40 -25 -10 5 20 35 50 65 80 95 110 125 ISOURCE = 800 µA VDET = 4.0V Junction Temperature (°C) FIGURE 2-15: Load Transient Response 10 µF Output Capacitor. FIGURE 2-18: RESET Output Voltage High vs. Junction Temperature.  2002 Microchip Technology Inc. DS21385C-page 7 TC1300 3.0 DETAILED DESCRIPTION The TC1300 is a combination of a fixed output, low dropout regulator and a microcontroller monitor/RESET. Unlike bipolar regulators, the TC1300 supply current does not increase with load current. In addition, VOUT remains stable and within regulation over the entire specified operating load range (0 mA to 300 mA) and operating input voltage range (2.7V to 6.0V). Figure 3-1 shows a typical application circuit. The regulator is enabled any time the shutdown input (SHDN) is above VIH. The regulator is shutdown (disabled) when SHDN is at or below VIL. SHDN m ay be controlled by a CMOS logic gate or an I/O port of a microcontroller. If the SHDN input is not required, it should be connected directly to the input supply. While in shutdown, supply current decreases to 30 µA (typical), VOUT falls to zero and RESET remains valid. TC1300, the selected output capacitor equivalent series resistance (ESR) range is 0.1 ohms to 5 ohms when using 1 µF of output capacitance, and 0.01 ohms to 5 ohms when using 10 µF of output capacitance. Because of the ESR requirement, tantalum and aluminum electrolytic capacitors are recommended. Aluminum electrolytic capacitors are not recommended for operation at temperatures below -25°C. When operating from sources other than batteries, rejection and transient responses can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. 3.3 Bypass Input (Optional) 3.1 RESET Output An optional 470 pF capacitor connected from the Bypass input to ground reduces noise present on the internal reference, which in turn significantly reduces output noise and improves PSRR performance. This input may be left unconnected. Larger capacitor values may be used, but results in a longer time period to rated output voltage when power is initially applied. The RESET output is driven active-low within 160 µsec of VDET falling through the reset voltage threshold. RESET is maintained active for a minimum of 140 msec after VDET rises above the reset threshold. The TC1300 has an active-low RESET output. The output of the TC1300 is valid down to V DET = 1V and is optimized to reject fast transient glitches on the V DET line. Microcontroller RESET VOUT C1 1 µF 1 VDET 8 3.4 Turn On Response The turn-on response is defined as two separate response categories, Wake-Up Time (tWK) and Settling Time (tS). The TC1300 has a fast Wake-Up Time (10 µsec typical) when released from shutdown. See Figure 3-2 for the Wake-Up Time designated as tWK. The Wake-Up Time is defined as the time it takes for the output to rise to 2% of the VOUT value after being released from shutdown. The total turn-on response is defined as the Settling Time (tS) (see Figure 3-2). Settling Time (inclusive with tWK) is defined as the condition when the output is within 2% of its fully enabled value (50 µsec typical) when released from shutdown. The settling time of the output voltage is dependent on load conditions and output capacitance on VOUT (RC response). VIH SHDN VOUT VIL 98% tS RESET VDET 2V OUT 3 4 GND VIN 7 6 TC1300 NC C2 1 µF Battery + Bypass SHDN 5 Shutdown Control (from Power Control Logic) CBYPASS 470 pF (Optional) FIGURE 3-1: Typical Application Circuit. 3.2 Output Capacitor 2% tWK A 1 µF (min) capacitor from V OUT to ground is required. A 1 µF capacitor should also be connected from VIN to GND if there is more than 10 inches of wire between the regulator and the AC filter capacitor, or if a battery is used as the power source. As with all low dropout regulators, a minimum output capacitance is required to stabilize the output voltage. For the TC1300, a minimum of 1 µF of output capacitance is enough to stabilize the device over the entire operating load and line range. The selected output capacitor plays an important role is compensating the LDO regulator. For the FIGURE 3-2: Wake-Up Response Time. DS21385C-page 8  2002 Microchip Technology Inc. TC1300 4.0 4.1 THERMAL CONSIDERATIONS Thermal Shutdown Integrated thermal protection circuitry shuts the regulator off when the die temperature exceeds 150°C. The regulator remains off until the die temperature drops to approximately 140°C. The worst case actual power dissipation equation can be used in conjunction with the LDO maximum allowable power dissipation equation to ensure regulator thermal operation is within limits. For example: Given: VINMAX VOUTMIN ILOADMAX TJMAX TAMAX θJA Find: = = = = = = 4.1V 3.0V -2.5% 200 mA 125°C 55°C 200°C/W 4.2 Power Dissipation The amount of power the regulator dissipates is primarily a function of input and output voltage, and output current. The following equation is used to calculate worst case actual power dissipation: EQUATION P D ≈ ( V INMAX – V OUTMIN ) I LO ADMAX Where: PD = worst case actual power dissipation VINMAX = maximum voltage on VIN VOUTMIN = minimum regulator output voltage ILOADMAX = maximum output (load) current The maximum allowable power dissipation, PDMAX, is a function of the maximum ambient temperature (TAMAX), the maximum recommended die temperature (125°C) and the thermal resistance from junction-to-air (θJA). The MSOP-8 package has a θJA of approximately 200°C/Watt when mounted on a FR4 dielectric copper clad PC board. EQUATION: ACTUAL POWER DISSIPATION –3 P D ≈ ( V INMAX – V OUTMIN ) I LO ADMAX = [ ( 4.1 ) – ( 3.0 × .975 ) ] 200 × 10 = 220 mW EQUATION: MAXIMUM ALLOWABLE POWER DISSIPATION ( T JMAX – T AMAX ) P DMAX = ------------------------------------------θ JA ( 125 – 55 ) = ------------------------200 = 350 mW In this example, the TC1300 dissipates a maximum of only 220 mW; below the allowable limit of 350 mW. In a similar manner, the maximum actual power dissipation equation and the maximum allowable power dissipation equation can be used to calculate maximum current and/or input voltage limits. For example, the maximum allowable VIN is found by substituting the maximum allowable power dissipation of 350 mW into the actual power dissipation equation, from which VINMAX = 4.97V. EQUATION ( T JMAX – T AMAX ) P DMAX = ------------------------------------------θ JA 4.3 Layout Considerations The primary path of heat conduction out of the package is via the package leads. Therefore, layouts having a ground plane, wide traces at the pads and wide power supply bus lines combine to lower θJA and, therefore, increase the maximum allowable power dissipation limit.  2002 Microchip Technology Inc. DS21385C-page 9 TC1300 5.0 5.1 PACKAGING INFORMATION Package Marking Information 8-Lead MSOP XXXXXX YWWNNN Example: 1300RA YWWNNN Part Number TC1300R - 2.5VUA TC1300Y - 2.7VUA TC1300R - 2.8VUA TC1300R - 2.85VUA TC1300R - 3.0VUA TC1300R - 3.3VUA Marking Code (XXXXXX) 1300RA 1300YF 1300RB 1300RC 1300RD 1300RE Legend: XX...X Y WW NNN Customer specific information* Year code (last digit of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * Standard marking consists of Microchip part number, year code, week code, traceability code (facility code, mask rev#, and assembly code). For marking beyond this, certain price adders apply. Please check with your Microchip Sales Office. DS21385C-page 10  2002 Microchip Technology Inc. TC1300 5.2 Package Dimensions Component Taping Orientation for 8-Pin MSOP Devices User Direction of Feed PIN 1 W P Standard Reel Component Orientation for TR Suffix Device Carrier Tape, Number of Components Per Reel and Reel Size: Package 8-Pin MSOP Carrier Width (W) 12 mm Pitch (P) 8 mm Part Per Full Reel 2500 Reel Size 13 in.  2002 Microchip Technology Inc. DS21385C-page 11 TC1300 8-Lead Plastic Micro Small Outline Package (UA) (MSOP) p E E1 D 2 B n 1 α A A1 c φ A2 (F) β L Units Number of Pins Pitch Overall Height Molded Package Thickness Standoff Overall Width Molded Package Width Overall Length Foot Length Footprint (Reference) Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom *Controlling Parameter § Significant Characteristic Notes: § Dimension Limits n p A A2 A1 E E1 D L F φ c B α β .030 .002 .184 .114 .114 .016 .035 0 .004 .010 MIN INCHES NOM 8 .026 .044 .034 .193 .118 .118 .022 .037 .006 .012 7 7 .038 .006 .200 .122 .122 .028 .039 6 .008 .016 MAX MIN MILLIMETERS* NOM 0.65 1.18 0.76 0.05 4.67 2.90 2.90 0.40 0.90 0 0.10 0.25 0.15 0.30 7 7 4.90 3.00 3.00 0.55 0.95 0.86 0.97 0.15 .5.08 3.10 3.10 0.70 1.00 6 0.20 0.40 MAX 8 Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. Drawing No. C04-111 DS21385C-page 12  2002 Microchip Technology Inc. TC1300 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device -X.X Output Voltages X Temperature Range /XX Package Examples: a) TC1300R-2.5VUA: 300mA CMOS LDO w/ Shutdown, Bypass & Independent Delayed Reset, 2.5V output voltage, 2.63V RESET Threshold. TC1300R-2.8VUA: 300mA CMOS LDO w/Shutdown, Bypass & Independent Delayed Reset, 2.8V output voltage, 2.63V RESET Threshold. TC1300R-2.85VUA: 300mA CMOS LDO w/ Shutdown, Bypass & Independent Delayed Reset, 2.85V output voltage, 2.63V RESET Threshold. TC1300R-3.0VUA: 300mA CMOS LDO w/Shutdown, Bypass & Independent Delayed Reset, 3.0V output voltage, 2.63V RESET Threshold. TC1300R-3.3VUA: 300mA CMOS LDO w/Shutdown, Bypass & Independent Delayed Reset, 3.3V output voltage, 2.63V RESET Threshold. TC1300R-2.85VUATR: 300mA CMOS LDO w/ Shutdown, Bypass & Independent Delayed Reset, 2.85V output voltage, 2.63V RESET Threshold, tape and reel. TC1300Y-2.7VUA: 300mA CMOS LDO w/ Shutdown, Bypass & independant Delayed Reset, 2.7V output voltage, 2.4V RESET Threshold. Device: TC1300X-X.XXXX: 300mA CMOS LDO w/Shutdown, Bypass & Independent Delayed Reset TC1300X-X.XXXXTR: 300mA CMOS LDO w/Shutdown, Bypass & Independent Delayed Reset (Tape and Reel) = = = = = = 2.5 2.7 2.8 2.85 3.0 3.3 b) c) d) Output Voltages: RESET Threshold Voltages: - 2.4V = Y - 2.63V = R Temperature Range: Package: 2.5V 2.7V 2.8V 2.85V 3.0V 3.3V e) f) V = -40°C to +125°C g) UA = Micro Small Outline Package (MSOP), 8-lead Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  2002 Microchip Technology Inc. DS21385C-page13 TC1300 NOTES: DS21385C-page 14  2002 Microchip Technology Inc. Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, K EELOQ, MPLAB, PIC, PICmicro, PICSTART and PRO MATE are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro ® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified.  2002 Microchip Technology Inc. DS21385C - page 15 M WORLDWIDE SALES AND SERVICE AMERICAS Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com ASIA/PACIFIC Australia Microchip Technology Australia Pty Ltd Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 Japan Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Rocky Mountain 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-4338 China - Beijing Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104 Korea Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934 Atlanta 500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770-640-0034 Fax: 770-640-0307 Singapore Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850 Boston 2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692-3821 China - Chengdu Microchip Technology Consulting (Shanghai) Co., Ltd., Chengdu Liaison Office Rm. 2401, 24th Floor, Ming Xing Financial Tower No. 88 TIDU Street Chengdu 610016, China Tel: 86-28-86766200 Fax: 86-28-86766599 Taiwan Microchip Technology (Barbados) Inc., Taiwan Branch 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139 Chicago 333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 630-285-0071 Fax: 630-285-0075 China - Fuzhou Microchip Technology Consulting (Shanghai) Co., Ltd., Fuzhou Liaison Office Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 350001, China Tel: 86-591-7503506 Fax: 86-591-7503521 Dallas 4570 Westgrove Drive, Suite 160 Addison, TX 75001 Tel: 972-818-7423 Fax: 972-818-2924 EUROPE Austria Microchip Technology Austria GmbH Durisolstrasse 2 A-4600 Wels Austria Tel: 43-7242-2244-399 Fax: 43-7242-2244-393 Detroit Tri-Atria Office Building 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Tel: 248-538-2250 Fax: 248-538-2260 China - Shanghai Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060 Kokomo 2767 S. Albright Road Kokomo, Indiana 46902 Tel: 765-864-8360 Fax: 765-864-8387 Denmark Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910 Los Angeles 18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 949-263-1888 Fax: 949-263-1338 China - Shenzhen Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 1315, 13/F, Shenzhen Kerry Centre, Renminnan Lu Shenzhen 518001, China Tel: 86-755-82350361 Fax: 86-755-82366086 France Microchip Technology SARL Parc d’Activite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 San Jose Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955 China - Hong Kong SAR Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 Toronto 6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 Germany Microchip Technology GmbH Steinheilstrasse 10 D-85737 Ismaning, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44 India Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O’Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062 Italy Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883 United Kingdom Microchip Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820 10/18/02 DS21385B-page 16  2002 Microchip Technology Inc.