TC429

M Features • • • • • • • • TC429 General Description The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5Ω output impedance and 6A peak output current drive. A 2500pF capacitive load will be driven 18V in 25nsec. The rapid switching times with large capacitive loads minimize MOSFET transition power loss. A TTL/CMOS input logic level is translated into an output voltage swing that equals the supply and will swing to within 25mV of ground or VDD. Input voltage swing may equal the supply. Logic input current is under 10µA, making direct interface to CMOS/bipolar switch-mode power supply controllers easy. Input “speed-up” capacitors are not required. The CMOS design minimizes quiescent power supply current. With a logic 1 input, power supply current is 5mA maximum and decreases to 0.5mA for logic 0 inputs. For dual devices, see the TC426/TC427/TC428, TC4426/TC4427/TC4428 and TC4426A/TC4427A/ TC4428A data sheets. For noninverting applications, or applications requiring latch-up protection, see the TC4420/TC4429 data sheet. 6A Single High-Speed, CMOS Power MOSFET Driver High Peak Output Current: 6A Wide Operating Range: 7V to 18V High Impedance CMOS Logic Input Logic Input Threshold Independent of Supply Voltage Low Supply Current - With Logic 1 Input – 5mA Max - With Logic 0 Input – 0.5mA Max Output Voltage Swing Within 25mV of Ground or VDD Short Delay Time: 75nsec Max High Capacitive Load Drive Capability - tRISE, tFALL = 35nsec Max With CLOAD = 2500pF Applications • • • • Switch-Mode Power Supplies CCD Drivers Pulse Transformer Drive Class D Switching Amplifiers Device Selection Table Part Number TC429CPA TC429EPA TC429MJA Package 8-Pin PDIP 8-Pin PDIP 8-Pin CERDIP Temp. Range 0°C to +70°C -40°C to +85°C -55°C to +125°C Typical Application 1,8 VDD Package Type 8-Pin PDIP/CERDIP VDD INPUT NC GND 1 2 3 4 8 7 6 VDD OUTPUT GND Input 2 300mV 6,7 Output TC429 4,5 Effective Input C = 38pF OUTPUT GND TC429 5 NC = No internal connection NOTE: Duplicate pins must both be connected for proper operation.  2002 Microchip Technology Inc. DS21416B-page 1 TC429 1.0 ELECTRICAL CHARACTERISTICS *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings* Supply Voltage .....................................................+20V Input Voltage, Any Terminal ...................................VDD + 0.3V to GND – 0.3V Power Dissipation (TA ≤ 70°C) PDIP .........................................................730mW CERDIP....................................................800mW Derating Factor PDIP .................................5.6mW/°C Above 36°C CERDIP................................................6.4mW/°C Operating Temperature Range C Version......................................... 0°C to +70°C E Version ......................................-40°C to +85°C M Version ...................................-55°C to +125°C Storage Temperature Range ..............-65°C to +150°C TC429 ELECTRICAL SPECIFICATIONS Electrical Characteristics: TA = +25°C with 7V ≤ VDD ≤ 18V, unless otherwise noted. Symbol Input VIH VIL IIN Output VOH VOL RO High Output Voltage Low Output Voltage Output Resistance VDD – 0.025 — — — IPK tR tF tD1 tD2 IS Note 1: Parameter Min Typ Max Units Test Conditions Logic 1, High Input Voltage Logic 0, Low Input Voltage Input Current 2.4 — -10 1.8 1.3 — — — 1.8 1.5 6 23 25 53 60 3.5 0.3 — 0.8 10 — 0.025 2.5 2.5 — 35 35 75 75 5 0.5 V V µA 0V ≤ VIN ≤ VDD V V Ω Ω VIN = 0.8V, IOUT = 10mA, VDD = 18V VIN = 2.4V, IOUT = 10mA, VDD = 18V VDD = 18V (Figure 3-4) Figure 3-1, CL = 2500pF Figure 3-1, CL = 2500pF Figure 3-1 Figure 3-1 VIN = 3V VIN = 0V Peak Output Current Rise Time Fall Time Delay Time Delay Time Power Supply Current Switching times ensured by design. — — — — — — — A nsec nsec nsec nsec mA Switching Time (Note 1) Power Supply DS21416B-page 2  2002 Microchip Technology Inc. TC429 TC429 ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Characteristics: Over operating temperature range with 7V ≤ VDD ≤ 18V, unless otherwise noted. Symbol Input VIH VIL IIN Output VOH VOL RO High Output Voltage Low Output Voltage Output Resistance VDD – 0.025 — — — Switching Time (Note 1) tR tF tD1 tD2 IS Note 1: Parameter Min Typ Max Units Test Conditions Logic 1, High Input Voltage Logic 0, Low Input Voltage Input Current 2.4 — -10 — — — — — — — — 0.8 10 — 0.025 5 5 V V µA 0V ≤ VIN ≤ VDD V V Ω Ω VIN = 0.8V, IOUT = 10mA, VDD = 18V VIN = 2.4V, IOUT = 10mA, VDD = 18V Figure 3-1, CL = 2500pF Figure 3-1, CL = 2500pF Figure 3-1 Figure 3-1 VIN = 3V VIN = 0V Rise Time Fall Time Delay Time Delay Time Power Supply Current Switching times ensured by design. — — — — — — — — — — — — 70 70 100 120 12 1 nsec nsec nsec nsec mA Power Supply  2002 Microchip Technology Inc. DS21416B-page 3 TC429 2.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 2-1. TABLE 2-1: Pin No. (8-Pin PDIP, CERDIP) 1 2 3 4 5 6 7 8 PIN FUNCTION TABLE Symbol VDD INPUT NC GND GND OUTPUT OUTPUT VDD Supply input, 7V to 18V. Control input, TTL/CMOS compatible logic input. No connection. Ground. Ground. CMOS totem-pole output, common to Pin 7. CMOS totem-pole output, common to Pin 6. Supply input, 7V to 18V. Description DS21416B-page 4  2002 Microchip Technology Inc. TC429 3.0 3.1 APPLICATIONS INFORMATION Supply Bypassing FIGURE 3-1: INVERTING DRIVER SWITCHING TIME TEST CIRCUIT VDD = 18V Charging and discharging large capacitive loads quickly requires large currents. For example, charging a 2500pF load to 18V in 25nsec requires a 1.8A current from the device’s power supply. To ensure low supply impedance over a wide frequency range, a parallel capacitor combination is recommended for supply bypassing. Low-inductance ceramic disk capacitors with short lead lengths (< 0.5 in.) should be used. A 1µF film capacitor in parallel with one or two 0.1µF ceramic disk capacitors normally provides adequate bypassing. 1 1µF 8 0.1µF Input 2 6 7 Output CL = 2500pF TC429 4 5 3.2 Grounding +5V Input 0V 18V Output 0V 10% 10% tD1 90% tF tD2 Input: 100kHz, square wave, tRISE = tFALL ≤ 10nsec 90% The high-current capability of the TC429 demands careful PC board layout for best performance. Since the TC429 is an inverting driver, any ground lead impedance will appear as negative feedback which can degrade switching speed. The feedback is especially noticeable with slow rise-time inputs, such as those produced by an open-collector output with resistor pullup. The TC429 input structure includes about 300mV of hysteresis to ensure clean transitions and freedom from oscillation, but attention to layout is still recommended. Figure 3-3 shows the feedback effect in detail. As the TC429 input begins to go positive, the output goes negative and several amperes of current flow in the ground lead. As little as 0.05Ω of PC trace resistance can produce hundreds of millivolts at the TC429 ground pins. If the driving logic is referenced to power ground, the effective logic input level is reduced and oscillations may result. To ensure optimum device performance, separate ground traces should be provided for the logic and power connections. Connecting logic ground directly to the TC429 GND pins ensures full logic drive to the input and fast output switching. Both GND pins should be connected to power ground. tR 90% 10% FIGURE 3-2: SWITCHING SPEED VOLTAGE (5V/DIV) INPUT OUTPUT CL = 2500pF VS = 18V 5V 100ns TIME (100ns/DIV) VOLTAGE (5V/DIV) CL = 2500pF VS = 7V INPUT OUTPUT 5V 100ns TIME (100ns/DIV)  2002 Microchip Technology Inc. DS21416B-page 5 TC429 FIGURE 3-3: SWITCHING TIME DEGRADATION DUE TO NEGATIVE FEEDBACK +18V FIGURE 3-4: +18V PEAK OUTPUT CURRENT TEST CIRCUIT TC429 2.4V 0V 0.1µF 2 4 1µF 1µF 18V 1 8 6,7 5 TEK Current Probe 6302 0V 0.1µF 2500pF 18V 2.4V 0V 0.1µF 2 4 1 8 6,7 5 TEK Current Probe 6302 0V 0.1µF 2500pF Logic Ground 300 mV Power Ground 6A PC Trace Resistance = 0.05W TC429 3.4 Power Dissipation 3.3 Input Stage The input voltage level changes the no-load or quiescent supply current. The N-channel MOSFET input stage transistor drives a 3mA current source load. With a logic “1” input, the maximum quiescent supply current is 5mA. Logic “0” input level signals reduce quiescent current to 500µA maximum. The TC429 input is designed to provide 300mV of hysteresis, providing clean transitions and minimizing output stage current spiking when changing states. Input voltage levels are approximately 1.5V, making the device TTL compatible over the 7V to 18V operating supply range. Input current is less than 10µA over this range. The TC429 can be directly driven by TL494, SG1526/ 1527, SG1524, SE5560 or similar switch-mode power supply integrated circuits. By off-loading the power-driving duties to the TC429, the power supply controller can operate at lower dissipation, improving performance and reliability. CMOS circuits usually permit the user to ignore power dissipation. Logic families such as the 4000 and 74C have outputs that can only supply a few milliamperes of current, and even shorting outputs to ground will not force enough current to destroy the device. The TC429, however, can source or sink several amperes and drive large capacitive loads at high frequency. The package power dissipation limit can easily be exceeded. Therefore, some attention should be given to power dissipation when driving low impedance loads and/or operating at high frequency. The supply current versus frequency and supply current versus capacitive load characteristic curves will aid in determining power dissipation calculations. Table 3-1 lists the maximum operating frequency for several power supply voltages when driving a 2500pF load. More accurate power dissipation figures can be obtained by summing the three power sources. Input signal duty cycle, power supply voltage and capacitive load influence package power dissipation. Given power dissipation and package thermal resistance, the maximum ambient operation temperature is easily calculated. The 8-pin CERDIP junction-toambient thermal resistance is 150°C/W. At +25°C, the package is rated at 800mW maximum dissipation. Maximum allowable chip temperature is +150°C. DS21416B-page 6  2002 Microchip Technology Inc. TC429 Three components make up total package power dissipation: • Capacitive load dissipation (PC) • Quiescent power (PQ) • Transition power (PT) The capacitive load-caused dissipation is a direct function of frequency, capacitive load and supply voltage. The package power dissipation is: PC = f C VS2 Where: f = Switching frequency C = Capacitive load VS = Supply voltage Quiescent power dissipation depends on input signal duty cycle. A logic low input results in a low-power dissipation mode with only 0.5mA total current drain. Logic high signals raise the current to 5mA maximum. The quiescent power dissipation is: PQ = VS (D (IH) + (1 – D) IL) Where: IH = Quiescent current with input high (5mA max) IL = Quiescent current with input low (0.5mA max) D = Duty cycle Transition power dissipation arises because the output stage N- and P-channel MOS transistors are ON simultaneously for a very short period when the output changes. The transition approximately: package 10–9 power dissipation is VS = 18V RL = 0.1Ω 5V 500mV Where: TJ = Maximum allowable junction temperature (+150°C) θJA = Junction-to-ambient thermal resistance (150°C/W, CERDIP) Note: Ambient operating temperature should not exceed +85°C for IJA devices or +125°C for MJA devices. TABLE 3-1: VS 18V 15V 10V 5V MAXIMUM OPERATING FREQUENCIES fMAX 500kHz 700kHz 1.3MHz >2MHz CONDITIONS: 1. CERDIP Package (θJA =150°C/W) 2. TA = +25°C 3. CL = 2500pF FIGURE 3-5: PEAK OUTPUT CURRENT CAPABILITY 5V/DIV 500mV/DIV (5 AMP/DIV) INPUT OUTPUT PT = f VS (3.3 x A • Sec) An example shows the relative magnitude for each item. C VS D f PD = 2500pF = 15V = 50% = 200kHz = Package power dissipation = PC + PT + PQ = 113mW + 10mW + 41mW = 164mW 5µs TIME (5µs/DIV) 3.5 Note: POWER-ON OSCILLATION It is extremely important that all MOSFET Driver applications be evaluated for the possibility of having High-Power Oscillations occurring during the power-on cycle. Maximum operating temperature = TJ – θJA (PD) = 125°C Power-on oscillations are due to trace size and layout as well as component placement. A ‘quick fix’ for most applications which exhibit power-on oscillation problems is to place approximately 10kΩ in series with the input of the MOSFET driver.  2002 Microchip Technology Inc. DS21416B-page 7 TC429 4.0 Note: TYPICAL CHARACTERISTICS The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Rise/Fall Times vs. Temperature 60 Rise/Fall Times vs. Supply Voltage 60 T 50 TIME (nsec) L Rise/Fall Times vs. Capacitive Load 100 °C 50 T V tF 40 40 tF TIME (nsec) tR 10 30 tF tR 30 tR 20 20 10 5 10 15 SUPPLY VOLTAGE (V) 20 10 -50 -25 0 25 50 75 100 125 150 °C) 1 100 1K CAPACITIVE LOAD (pF) 10K Supply Current vs. Capacitive Load 70 60 50 40 30 20 200kHz 10 0 10 20kHz 100 1K CAPACITIVE LOAD (pF) 10K 40 90 Delay Times vs. Temperature L Delay Times vs. Supply Voltage 140 SUPPLY CURRENT (mA) TA V °C 80 DELAY TIME (nsec) VDD = +15V DELAY TIME (nsec) T °C C = 2500p pF 120 70 tD2 100 400kHz 60 80 tD2 60 tD1 50 tD1 -50 -25 0 25 50 75 100 125 150 °C) 40 5 10 15 SUPPLY VOLTAGE (V) 20 Supply Current vs. Frequency 50 T CL SUPPLY CURRENT (mA) Supply Current vs. Supply Voltage 4 SUPPLY CURRENT (mA) Supply Current vs. Temperature 4 SUPPLY CURRENT (mA) °C 40 15V 30 VDD = 18V 10V T = +25°C RL = ∞ V = +18°C RL = ∞ 2 20 3 10 5V 0 1 10 100 FREQUENCY (kHz) 1K 0 4 8 12 16 SUPPLY VOLTAGE (V) 20 2 -75 -50 -25 0 25 50 75 100 125 150 °C) DS21416B-page 8  2002 Microchip Technology Inc. TC429 TYPICAL CHARACTERISTICS (CONTINUED) Voltage Transfer Characteristics 20 High Output Voltage vs. Current 400 TA = +25°C Low Output Voltage vs. Current 400 OUTPUT VOLTAGE (mV) TA = +25°C OUTPUT VOLTAGE (mV) HYSTERESIS ≈310m V TA = +25°C OUTPUT VOLTAGE (V) 15 300 VDD = 5V 200 300 VDD = 5V 200 10V 100 18V 18V 15V 15V 300mV 10 200mV 5 10V 15V 15V 100 18V 18V 0 0.25 0.50 0.75 1 1.25 1.50 1.75 2 INPUT VOLTAGE (V) 0 20 40 60 80 100 0 20 40 60 80 100 CURRENT SOURCED (mA) CURRENT SUNK (mA) Thermal Derating Curves 1600 1400 8-Pin DIP 88-Pin CERDIP 1000 800 600 400 200 0 0 10 20 30 40 50 60 70 80 90 100 110 120 MAX. POWER (mW) 1200 AMBIENT TEMPERATURE (°C)  2002 Microchip Technology Inc. DS21416B-page 9 TC429 5.0 5.1 PACKAGING INFORMATION Package Marking Information Package marking data not available at this time. 5.2 Package Dimensions 8-Pin Plastic DIP PIN 1 .260 (6.60) .240 (6.10) .045 (1.14) .030 (0.76) .400 (10.16) .348 (8.84) .200 (5.08) .140 (3.56) .150 (3.81) .115 (2.92) .070 (1.78) .040 (1.02) .310 (7.87) .290 (7.37) .040 (1.02) .020 (0.51) .015 (0.38) .008 (0.20) .400 (10.16) .310 (7.87) 3° MIN. .110 (2.79) .090 (2.29) .022 (0.56) .015 (0.38) Dimensions: inches (mm) 8-Pin CERDIP (Narrow) .110 (2.79) .090 (2.29) PIN 1 .300 (7.62) .230 (5.84) .055 (1.40) MAX. .400 (10.16) .370 (9.40) .200 (5.08) .160 (4.06) .200 (5.08) .125 (3.18) .020 (0.51) MIN. .320 (8.13) .290 (7.37) .040 (1.02) .020 (0.51) .015 (0.38) .008 (0.20) .400 (10.16) .320 (8.13) .065 (1.65) .020 (0.51) .045 (1.14) .016 (0.41) Dimensions: inches (mm) .150 (3.81) MIN. 3° MIN. DS21416B-page 10  2002 Microchip Technology Inc. TC429 Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  2002 Microchip Technology Inc. DS21416B-page11 TC429 NOTES: DS21416B-page12  2002 Microchip Technology Inc. TC429 Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, FilterLab, KEELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER, PICSTART, PRO MATE, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, MXDEV, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified.  2002 Microchip Technology Inc. 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