TC429_03

M Features • High Peak Output Current: 6A • Wide Input Supply Voltage Operating Range: - 7V to 18V • High-Impedance CMOS Logic Input • Logic Input Threshold Independent of Supply Voltage • Low Supply Current: - With Logic ‘1’ Input – 5 mA max. - With Logic ‘0’ Input – 0.5 mA max. • Output Voltage Swing Within 25 mV of Ground or V DD • Short Delay Time: 75 nsec max • Available in the Space-Saving 8-Pin SOIC Package. • High Capacitive Load Drive Capability: - tRISE, tFALL = 35 nsec max with C LOAD = 2500 pF TC429 General Description The TC429 is a high-speed, single output, CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features a 2.5Ω output impedance and 6A peak output current drive. A 2500 pF capacitive load will be driven to 18V in 25 nsec. The rapid switching times with large capacitive loads minimize MOSFET switching power losses. A TTL/CMOS input logic level is translated into an output voltage swing that equals the supply voltage and will swing to within 25 mV of ground or VDD. Input voltage swing may equal the supply voltage. Logic input current is under 10 µA, making direct interface to CMOS/bipolar switch-mode power supply controllers easy. Input “speed-up” capacitors are not required. The CMOS design minimizes quiescent power supply current. With a logic ‘1’ input, power supply current is 5 mA maximum and decreases to 0.5 mA for logic ‘0’ inputs. For dual output MOSFET drivers, see the TC426/ TC427/TC428 (DS21415), TC4426/TC4427/TC4428 (DS21422) and TC4426A/TC4427A/TC4428A (DS21423) data sheets. For non-inverting applications, or applications requiring latch-up protection, see the TC4420/TC4429 (DS21419) data sheet. 6A Single High-Speed, CMOS Power MOSFET Driver Applications • • • • Switch-Mode Power Supplies CCD Drivers Pulse Transformer Drive Class D Switching Amplifiers Package Types CERDIP/PDIP/SOIC VDD INPUT NC GND 1 2 3 4 8 7 6 VDD OUTPUT OUTPUT GND TC429 5 NC = No Internal Connection Note: Duplicate pins must both be connected for proper operation.  2003 Microchip Technology Inc. DS21416C-page 1 TC429 Functional Block Diagram 1,8 VDD 300 mV 6,7 Output Input 2 Effective Input C = 38 pF TC429 GND 4,5 DS21416C-page 2  2003 Microchip Technology Inc. TC429 1.0 ELECTRICAL CHARACTERISTICS PIN FUNCTION TABLE Symbol VDD INPUT Description Supply input, 7V to 18V Control input. TTL/CMOS compatible logic input No connection Ground Ground CMOS push-pull, common to pin 7 CMOS push-pull, common to pin 6 Supply input, 7V to 18V Absolute Maximum Ratings † Supply Voltage ..................................................... +20V Input Voltage, Any Terminal ................................... VDD + 0.3V to GND – 0.3V Power Dissipation (TA ≤ 70°C) PDIP ............................................................ 730 mW CERDIP ....................................................... 800 mW SOIC............................................................ 470 mW Storage Temperature Range.............. -65°C to +150°C Maximum Junction Temperature, TJ ............... +150°C † Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. NC GND GND OUTPUT OUTPUT VDD DC ELECTRICAL CHARACTERISTICS Electrical Specifications: U nless otherwise noted, TA = +25°C with 7V ≤ VDD ≤ 18V. Parameters Input Logic ‘1’, High Input Voltage Logic ‘0’, Low Input Voltage Input Current Output High Output Voltage Low Output Voltage Output Resistance VOH VOL RO VDD – 0.025 — — — Peak Output Current Latch-Up Protection Withstand Reverse Current Switching Time (Note 1) Rise Time Fall Time Delay Time Delay Time Power Supply Power Supply Current IS — — Note 1: Switching times ensured by design. 3.5 0.3 5.0 0.5 mA VIN = 3V VIN = 0V tR tF tD1 tD2 — — — — 23 25 53 60 35 35 75 75 nsec nsec nsec nsec CL = 2500 pF, Figure 4-1 CL = 2500 pF, Figure 4-1 Figure 4-1 Figure 4-1 IPK IREV — — — — 1.8 1.5 6.0 0.5 — 0.025 2.5 2.5 — — A A V V Ω VIN = 0.8V, VOUT = 10 mA, VDD = 18V VIN = 2.4V, VOUT = 10 mA, VDD = 18V VDD = 18V, Figure 4-4 Duty cycle ≤ 2%, t ≤ 300 µsec, VDD = 16V VIH VIL IIN 2.4 — -10 1.8 1.3 — — 0.8 10 V V µA 0V ≤ VIN ≤ VDD Sym Min Typ Max Units Conditions  2003 Microchip Technology Inc. DS21416C-page 3 TC429 DC ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Specifications: U nless otherwise noted, over operating temperature range with 7V ≤ VDD ≤ 18V. Parameters Input Logic ‘1’, High Input Voltage Logic ‘0’, Low Input Voltage Input Current Output High Output Voltage Low Output Voltage Output Resistance VOH VOL RO VDD – 0.025 — — — Switching Time (Note 1) Rise Time Fall Time Delay Time Delay Time Power Supply Power Supply Current IS — — Note 1: Switching times ensured by design. — — 12 1.0 mA VIN = 3V VIN = 0V tR tF tD1 tD2 — — — — — — — — 70 70 100 120 nsec nsec nsec nsec CL = 2500 pF, Figure 4-1 CL = 2500 pF, Figure 4-1 Figure 4-1 Figure 4-1 — — — — — 0.025 5.0 5.0 V V Ω VIN = 0.8V, VOUT = 10 mA, VDD = 18V VIN = 2.4V, VOUT = 10 mA, VDD = 18V VIH VIL IIN 2.4 — -10 — — — — 0.8 10 V V µA 0V ≤ VIN ≤ VDD Sym Min Typ Max Units Conditions TEMPERATURE CHARACTERISTICS Electrical Specifications: U nless otherwise noted, TA = +25°C with 7V ≤ VDD ≤ 18V. Parameters Temperature Ranges Specified Temperature Range (C) Specified Temperature Range (E) Specified Temperature Range (M) Maximum Junction Temperature Storage Temperature Range Package Thermal Resistances Thermal Resistance, 8L-CERDIP Thermal Resistance, 8L-PDIP Thermal Resistance, 8L-SOIC θJA θJA θJA — — — 150 125 155 — — — ºC/W ºC/W ºC/W TA TA TA TJ TA 0 -40 -55 — -65 — — — — — +70 +85 +125 +150 +150 ºC ºC ºC ºC ºC Sym Min Typ Max Units Conditions DS21416C-page 4  2003 Microchip Technology Inc. TC429 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, TA = +25°C with 7V ≤ VDD ≤ 18V. 60 70 TA = +25°C CL = 2500 pF 50 TIME (nsec) SUPPLY CURRENT (mA) 60 50 40 30 20 TA = +25°C VDD = +15V 40 30 tF tR 400 kHz 200 kHz 20 10 20 20 kHz 100 1K CAPACITIVE LOAD (pF) 10K 10 5 10 15 SUPPLY VOLTAGE (V) 0 10 FIGURE 2-1: Voltage. 60 Rise/Fall Times vs. Supply FIGURE 2-4: Capacitive Load. 90 Supply Current vs. 50 CL = 2500 pF VDD = +15V DELAY TIME (nsec) 80 CL = 2500 pF VDD = +15V TIME (nsec) 40 tF 30 tR 70 tD2 60 20 50 tD1 10 -50 -25 0 25 50 75 100 125 150 TEMPERATURE (°C) 40 -50 -25 0 25 50 75 100 125 150 TEMPERATURE (°C) FIGURE 2-2: Temperature. 100 Rise/Fall Times vs. FIGURE 2-5: Temperature. 140 Delay Times vs. TA = +25°C VDD = +15V tF TIME (nsec) DELAY TIME (nsec) 120 TA = +25°C CL = 2500 pF tR 10 100 80 tD2 60 tD1 1 100 1K CAPACITIVE LOAD (pF) 10K 40 5 10 15 SUPPLY VOLTAGE (V) 20 FIGURE 2-3: Capacitive Load. Rise/Fall Times vs. FIGURE 2-6: Voltage. Delay Times vs. Supply  2003 Microchip Technology Inc. DS21416C-page 5 TC429 Note: Unless otherwise indicated, TA = +25°C with 7V ≤ VDD ≤ 18V. . 50 TA = +25°C CL = 2500 pF 20 TA = +25°C HYSTERESIS ≈310 mV SUPPLY CURRENT (mA) OUTPUT VOLTAGE (V) 40 15V 30 VDD = 18V 10V 15 300 mV 10 200 mV 5 20 10 5V 0 1 10 100 FREQUENCY (kHz) 1K 0 0.25 0.50 0.75 1 1.25 1.50 1.75 2 INPUT VOLTAGE (V) FIGURE 2-7: Frequency. 4 SUPPLY CURRENT (mA) Supply Current vs. FIGURE 2-10: Characterstics. 400 Voltage Transfer OUTPUT VOLTAGE (mV) TA = +25°C RL = ∞ INPUT LOGIC "1" TA = +25°C 300 VDD = 5V 200 2 10V 15V 100 18V 0 4 8 12 16 SUPPLY VOLTAGE (V) 20 0 20 40 60 80 100 SOURCE CURRENT (mA) FIGURE 2-8: Voltage. Supply Current vs. Supply FIGURE 2-11: High Output Voltage (VDD-VOH) vs. Output Source Current. 400 OUTPUT VOLTAGE (mV) 4 SUPPLY CURRENT (mA) VDD = +18°C RL = ∞ INPUT LOGIC "1" TA = +25°C 300 VDD = 5V 200 10V 100 18V 15V 3 2 -75 -50 -25 0 25 50 75 100 125 150 TEMPERATURE (°C) 0 20 40 60 80 100 SINK CURRENT (mA) FIGURE 2-9: Temperature. Supply Current vs. FIGURE 2-12: Low Output Voltage vs. Output Sink Current. DS21416C-page 6  2003 Microchip Technology Inc. TC429 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: Pin No. 1 2 3 4 5 6 7 8 PIN FUNCTION TABLE Symbol VDD INPUT Description Supply input, 7V to 18V Control input. TTL/CMOS compatible logic input No connection Ground Ground CMOS push-pull output, common to pin 7 CMOS push-pull output, common to pin 6 Supply input, 7V to 18V NC GND GND OUTPUT OUTPUT VDD 3.1 Supply Input (VDD) 3.3 The VDD input is the bias supply for the MOSFET driver and is rated for 7.0V to 18V with respect to the ground pin. The VDD input should be bypassed to ground with a local ceramic capacitor. The value of the capacitor should be chosen based on the capacitive load that is being driven. A value of 1.0 µF is suggested. CMOS Push-Pull Output (OUTPUT) The MOSFET driver output is a low-impedance, CMOS push-pull style output, capable of driving a capacitive load with 6.0A peak currents. 3.4 Ground (GND) 3.2 Control Input (INPUT) The MOSFET driver input is a high-impedance, TTL/CMOS compatible input. The input also has 300 mV of hysteresis between the high and low thresholds that prevents output glitching even when the rise and fall time of the input signal is very slow. The ground pins are the return path for the bias current and for the high peak currents that discharge the load capacitor. The ground pins should be tied into a ground plane or have very short traces to the bias supply source return. 3.5 No Connect (NC) No connection.  2003 Microchip Technology Inc. DS21416C-page 7 TC429 4.0 4.1 APPLICATIONS INFORMATION Supply Bypassing VDD = 18V Charging and discharging large capacitive loads quickly requires large currents. For example, charging a 2500 pF load to 18V in 25 nsec requires a 1.8A current from the device's power supply. To ensure low supply impedance over a wide frequency range, a parallel capacitor combination is recommended for supply bypassing. Low-inductance ceramic disk capacitors with short lead lengths (< 0.5 in.) should be used. A 1 µF film capacitor in parallel with one or two 0.1 µF ceramic disk capacitors normally provides adequate bypassing. Input 2 1 µF 1, 8 0.1 µF 6, 7 Output CL = 2500 pF TC429 4, 5 4.2 Grounding Input: 100 kHz, square wave, tRISE = tFALL ≤ 10 nsec 90% +5V Input 0V 18V Output 0V 10% 10% tD1 90% tF The high-current capability of the TC429 demands careful PC board layout for best performance. Since the TC429 is an inverting driver, any ground lead impedance will appear as negative feedback that can degrade switching speed. The feedback is especially noticeable with slow rise-time inputs, such as those produced by an open-collector output with resistor pullup. The TC429 input structure includes about 300 mV of hysteresis to ensure clean transitions and freedom from oscillation, but attention to layout is still recommended. Figure 4-3 shows the feedback effect in detail. As the TC429 input begins to go positive, the output goes negative and several amperes of current flow in the ground lead. A PC trace resistance of as little as 0.05Ω can produce hundreds of millivolts at the TC429 ground pins. If the driving logic is referenced to power ground, the effective logic input level is reduced and oscillations may result. To ensure optimum device performance, separate ground traces should be provided for the logic and power connections. Connecting logic ground directly to the TC429 GND pins ensures full logic drive to the input and fast output switching. Both GND pins should be connected to power ground. tD2 tR 90% 10% FIGURE 4-1: Time Test Circuit. Inverting Driver Switching VOLTAGE (5V/DIV) INPUT OUTPUT CL = 2500pF VS = 18V 5V 100ns TIME (100ns/DIV) VOLTAGE (5V/DIV) CL = 2500pF VS = 7V INPUT OUTPUT 5V 100ns TIME (100ns/DIV) FIGURE 4-2: Switching Speed. DS21416C-page 8  2003 Microchip Technology Inc. TC429 +18V +18V 1 µF 18V 0V 0.1 µF 2500 pF 2.4V 0V 0.1 µF 2 4 1 TEK Current Probe 6302 0.1 µF 2500 pF 18V 0V TC429 2.4V 0V 0.1 µF 2 4 1 1 µF TEK Current Probe 6302 8 6,7 5 8 6,7 5 Logic Ground 300 mV Power Ground 6A PC Trace Resistance = 0.05 Ω TC429 FIGURE 4-4: Circuit. Peak Output Current Test 4.4 FIGURE 4-3: Switching Time Degradation Due To Negative Feedback. Power Dissipation 4.3 Input Stage The input voltage level changes the no-load or quiescent supply current. The N-channel MOSFET input stage transistor drives a 3 mA current source load. With a logic ‘1’ input, the maximum quiescent supply current is 5 mA. Logic ‘0’ input level signals reduce quiescent current to 500 µA maximum. The TC429 input is designed to provide 300 mV of hysteresis, providing clean transitions and minimizing output stage current spiking when changing states. Input voltage levels are approximately 1.5V, making the device TTL-compatible over the 7V to 18V operating supply range. Input pin current draw is less than 10 µA over this range. The TC429 can be directly driven by TL494, SG1526/ 1527, SG1524, SE5560 or similar switch-mode power supply integrated circuits. By off-loading the power-driving duties to the TC429, the power supply controller can operate at lower dissipation, improving performance and reliability. CMOS circuits usually permit the user to ignore power dissipation. Logic families such as the 4000 and 74C have outputs that can only supply a few milliamperes of current, and even shorting outputs to ground will not force enough current to destroy the device. The TC429, however, can source or sink several amperes and drive large capacitive loads at high frequency. Since the package power dissipation limit can easily be exceeded, some attention should be given to power dissipation when driving low-impedance loads and/or operating at high frequency. The supply current versus frequency and supply current versus capacitive load characteristic curves will aid in determining power dissipation calculations. Table 4-1 lists the maximum operating frequency for several power supply voltages when driving a 2500 pF load. More accurate power dissipation figures can be obtained by summing the three components that make up the total device power dissipation. Input signal duty cycle, power supply voltage and capacitive load influence package power dissipation. Given power dissipation and package thermal resistance, the maximum ambient operation temperature is easily calculated. The 8-pin CERDIP junction-toambient thermal resistance is 150°C/W. At +25°C, the package is rated at 800 mW maximum dissipation. Maximum allowable junction temperature is +150°C. Three components make up total package power dissipation: • Capacitive load dissipation (PC) • Quiescent power (PQ) • Transition power (PT) The capacitive load-caused dissipation is a direct function of frequency, capacitive load and supply voltage.  2003 Microchip Technology Inc. DS21416C-page 9 TC429 The device capacitive load dissipation is: EQUATION 2 P C = fCV S Where: f = Switching frequency C = Capacitive load VS = Supply voltage Quiescent power dissipation depends on input signal duty cycle. A logic low input results in a low-power dissipation mode with only 0.5 mA total current drain. Logic-high signals raise the current to 5 mA maximum. The quiescent power dissipation is: Note: Ambient operating temperature should not exceed +85ºC for EPA or EOA devices or +125ºC for MJA devices. TABLE 4-1: VS 18V 15V 10V 5V MAXIMUM OPERATING FREQUENCIES fMAX 500 kHz 700 kHz 1.3 MHz >2 MHz EQUATION P Q = V S ( D ( I H ) + ( 1 – D ) IL ) Where: IH = Quiescent current with input high (5 mA max) IL = Quiescent current with input low (0.5 mA max) D = Duty cycle Transition power dissipation arises because the output stage N- and P-channel MOS transistors are ON simultaneously for a very short period when the output changes. The device transition power dissipation is approximately: Conditions: 1. CERDIP Package (θJA =150°C/W) 2. TA = +25°C 3. CL = 2500 pF 5V/DIV 500mV/DIV (5 AMP/DIV) INPUT OUTPUT VS = 18V RL = 0.1Ω 5V 500mV 5µs EQUATION –9 P = fV  3.3 × 10 A • Sec T S  An example shows the relative magnitude for each item. C VS D f PD = 2500 pF = 15V = 50% = 200 kHz = Package power dissipation: = PC + PT + PQ = 113 mW + 10 mW + 41 mW = 164 mW TIME (5µs/DIV) FIGURE 4-5: Capability. Peak Output Current 4.5 Note: POWER-ON OSCILLATION It is extremely important that all MOSFET driver applications be evaluated for the possibility of having high-power oscillations occur during the power-on cycle. Maximum ambient operating temperature: = TJ – θJA (P D) = 150ºC - (150ºC/W)(0.164W) = 125°C Where: TJ θJA = Maximum allowable junction temperature (+150°C) = Junction-to-ambient thermal resistance (150°C/W, CERDIP) Power-on oscillations are due to trace size, layout and component placement. A ‘quick fix’ for most applications that exhibit power-on oscillation problems is to place approximately 10 kΩ in series with the input of the MOSFET driver. DS21416C-page 10  2003 Microchip Technology Inc. TC429 5.0 5.1 PACKAGING INFORMATION Package Marking Information 8-Lead PDIP (300 mil) XXXXXXXX NNN YYWW Example: TC429CPA 057 0350 8-Lead CERDIP (300 mil) Example: XXXXXXXX NNN YYWW TC429MJA 057 0350 8-Lead SOIC (150 mil) Example: TC429 EOA0350 057 XXXXXXXX XXXXYYWW NNN Legend: XX...X YY WW NNN Note : Customer specific information* Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * Standard marking consists of Microchip part number, year code, week code, traceability code (facility code, mask rev#, and assembly code). For marking beyond this, certain price adders apply. Please check with your Microchip Sales Office.  2003 Microchip Technology Inc. DS21416C-page 11 TC429 8-Lead Plastic Dual In-line (PA) – 300 mil (PDIP) E1 D 2 n 1 α E A A2 c L A1 β eB B1 p B Number of Pins Pitch Top to Seating Plane Molded Package Thickness Base to Seating Plane Shoulder to Shoulder Width Molded Package Width Overall Length Tip to Seating Plane Lead Thickness Upper Lead Width Lower Lead Width Overall Row Spacing Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic Units Dimension Limits n p A A2 A1 E E1 D L c B1 B eB a b MIN INCHES* NOM 8 .100 .155 .130 .313 .250 .373 .130 .012 .058 .018 .370 10 10 MAX MIN § .140 .115 .015 .300 .240 .360 .125 .008 .045 .014 .310 5 5 .170 .145 .325 .260 .385 .135 .015 .070 .022 .430 15 15 MILLIMETERS NOM 8 2.54 3.56 3.94 2.92 3.30 0.38 7.62 7.94 6.10 6.35 9.14 9.46 3.18 3.30 0.20 0.29 1.14 1.46 0.36 0.46 7.87 9.40 5 10 5 10 MAX 4.32 3.68 8.26 6.60 9.78 3.43 0.38 1.78 0.56 10.92 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-018 DS21416C-page 12  2003 Microchip Technology Inc. TC429 8-Lead Ceramic Dual In-line – 300 mil (CERDIP) E1 2 n 1 D E A2 A c eB A1 B1 B p L Number of Pins Pitch Top to Seating Plane Standoff § Shoulder to Shoulder Width Ceramic Pkg. Width Overall Length Tip to Seating Plane Lead Thickness Upper Lead Width Lower Lead Width Overall Row Spacing *Controlling Parameter JEDEC Equivalent: MS-030 Drawing No. C04-010 Units Dimension Limits n p A A1 E E1 D L c B1 B eB MIN .160 .020 .290 .230 .370 .125 .008 .045 .016 .320 INCHES* NOM 8 .100 .180 .030 .305 .265 .385 .163 .012 .055 .018 .360 MAX MIN .200 .040 .320 .300 .400 .200 .015 .065 .020 .400 MILLIMETERS NOM 8 2.54 4.06 4.57 0.51 0.77 7.37 7.75 5.84 6.73 9.40 9.78 3.18 4.13 0.20 0.29 1.14 1.40 0.41 0.46 8.13 9.15 MAX 5.08 1.02 8.13 7.62 10.16 5.08 0.38 1.65 0.51 10.16  2003 Microchip Technology Inc. DS21416C-page 13 TC429 8-Lead Plastic Small Outline (OA) – Narrow, 150 mil (SOIC) E E1 p D 2 B n 1 45° h α c A A2 φ β L A1 Number of Pins Pitch Overall Height Molded Package Thickness Standoff § Overall Width Molded Package Width Overall Length Chamfer Distance Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic Units Dimension Limits n p A A2 A1 E E1 D h L φ c B α β MIN .053 .052 .004 .228 .146 .189 .010 .019 0 .008 .013 0 0 INCHES* NOM 8 .050 .061 .056 .007 .237 .154 .193 .015 .025 4 .009 .017 12 12 MAX MIN .069 .061 .010 .244 .157 .197 .020 .030 8 .010 .020 15 15 MILLIMETERS NOM 8 1.27 1.35 1.55 1.32 1.42 0.10 0.18 5.79 6.02 3.71 3.91 4.80 4.90 0.25 0.38 0.48 0.62 0 4 0.20 0.23 0.33 0.42 0 12 0 12 MAX 1.75 1.55 0.25 6.20 3.99 5.00 0.51 0.76 8 0.25 0.51 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-057 DS21416C-page 14  2003 Microchip Technology Inc. TC429 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device X Temperature Range /XX Package Examples: a) b) Device: TC429: = = = 6A Single MOSFET Driver 0°C to +70°C -40°C to +85°C -55°C to +125°C (CERDIP only) c) d) TC429CPA: 6A Single MOSFET driver, PDIP package, 0°C to +70°C. TC429MJA: 6A Single MOSFET driver, CERDIP package, -55°C to +125°C. TC429EPA: 6A Single MOSFET driver, PDIP package, -40°C to +85°C. TC429EOA713: Tape and Reel, 6A Single MOSFET driver, SOIC package, 40°C to +85°C. Temperature Range: C E M Package: JA = Plastic CERDIP, (300 mil Body), 8-lead OA = Plastic SOIC, (150 mil Body), 8-lead * OA713 = Plastic SOIC, (150 mil Body), 8-lead * (Tape and Reel) PA = Plastic DIP (300 mil Body), 8-lead * SOIC package offered in E-Temp only Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  2003 Microchip Technology Inc. DS21416C-page15 TC429 NOTES: DS21416C-page 16  2003 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • • • Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” • • Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, KEELOQ, MPLAB, PIC, PICmicro, PICSTART, PRO MATE and PowerSmart are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, microID , MXDEV, MXLAB, PICMASTER, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Accuron, Application Maestro, dsPIC, dsPICDEM, dsPICDEM.net, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICC, PICkit, PICDEM, PICDEM.net, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPIC, Select Mode, SmartSensor, SmartShunt, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2003, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro ® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified.  2003 Microchip Technology Inc. DS21416C - page 17 M WORLDWIDE SALES AND SERVICE AMERICAS Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com ASIA/PACIFIC Australia Microchip Technology Australia Pty Ltd Marketing Support Division Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 Japan Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Atlanta 3780 Mansell Road, Suite 130 Alpharetta, GA 30022 Tel: 770-640-0034 Fax: 770-640-0307 Korea Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934 China - Beijing Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104 Boston 2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692-3821 Singapore Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850 Chicago 333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 630-285-0071 Fax: 630-285-0075 China - Chengdu Microchip Technology Consulting (Shanghai) Co., Ltd., Chengdu Liaison Office Rm. 2401-2402, 24th Floor, Ming Xing Financial Tower No. 88 TIDU Street Chengdu 610016, China Tel: 86-28-86766200 Fax: 86-28-86766599 Taiwan Microchip Technology (Barbados) Inc., Taiwan Branch 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139 Dallas 4570 Westgrove Drive, Suite 160 Addison, TX 75001 Tel: 972-818-7423 Fax: 972-818-2924 Detroit Tri-Atria Office Building 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Tel: 248-538-2250 Fax: 248-538-2260 China - Fuzhou Microchip Technology Consulting (Shanghai) Co., Ltd., Fuzhou Liaison Office Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 350001, China Tel: 86-591-7503506 Fax: 86-591-7503521 EUROPE Austria Microchip Technology Austria GmbH Durisolstrasse 2 A-4600 Wels Austria Tel: 43-7242-2244-399 Fax: 43-7242-2244-393 Kokomo 2767 S. Albright Road Kokomo, Indiana 46902 Tel: 765-864-8360 Fax: 765-864-8387 China - Hong Kong SAR Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 Los Angeles 18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 949-263-1888 Fax: 949-263-1338 Denmark Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910 China - Shanghai Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060 Phoenix 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-4338 France Microchip Technology SARL Parc d’Activite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 San Jose Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955 China - Shenzhen Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 1812, 18/F, Building A, United Plaza No. 5022 Binhe Road, Futian District Shenzhen 518033, China Tel: 86-755-82901380 Fax: 86-755-82966626 Toronto 6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 Germany Microchip Technology GmbH Steinheilstrasse 10 D-85737 Ismaning, Germany Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 China - Qingdao Rm. B505A, Fullhope Plaza, No. 12 Hong Kong Central Rd. Qingdao 266071, China Tel: 86-532-5027355 Fax: 86-532-5027205 Italy Microchip Technology SRL Via Quasimodo, 12 20025 Legnano (MI) Milan, Italy Tel: 39-0331-742611 Fax: 39-0331-466781 India Microchip Technology Inc. India Liaison Office Marketing Support Division Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O’Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062 United Kingdom Microchip Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820 03/25/03 DS21416C-page 18  2003 Microchip Technology Inc.