TC4421_04

TC4421/TC4422 9A High-Speed MOSFET Drivers Features • High Peak Output Current: 9A • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Continuous Output Current: 2A Max • Fast Rise and Fall Times: - 30 ns with 4,700 pF Load - 180 ns with 47,000 pF Load • Short Propagation Delays: 30 ns (typ) • Low Supply Current: - With Logic ‘1’ Input – 200 µA (typ) - With Logic ‘0’ Input – 55 µA (typ) • Low Output Impedance: 1.4Ω (typ) • Latch-Up Protected: Will Withstand 1.5A Output Reverse Current • Input Will Withstand Negative Inputs Up To 5V • Pin-Compatible with the TC4420/TC4429 6A MOSFET Driver • Space-saving 8-Pin 6x5 DFN Package General Description The TC4421/TC4422 are high-current buffer/drivers capable of driving large MOSFETs and IGBTs. These devices are essentially immune to any form of upset, except direct overvoltage or over-dissipation. They cannot be latched under any conditions within their power and voltage ratings. These parts are not subject to damage or improper operation when up to 5V of ground bounce is present on their ground terminals. They can accept, without damage or logic upset, more than 1A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge. The TC4421/TC4422 inputs may be driven directly from either TTL or CMOS (3V to 18V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. With both surface-mount and pin-through-hole packages and four operating temperature range offerings, the TC4421/22 family of 9A MOSFET drivers fit into most any application where high gate/line capacitance drive is required. Applications • • • • • Line Drivers for Extra Heavily-Loaded Lines Pulse Generators Driving the Largest MOSFETs and IGBTs Local Power ON/OFF Switch Motor and Solenoid Driver Package Types(1) 8-Pin PDIP/ TC4421 TC4422 SOIC VDD INPUT NC GND 1 8 VDD 2 TC4421 7 OUTPUT 3 TC4422 6 OUTPUT 4 5 GND VDD OUTPUT OUTPUT GND VDD 1 INPUT 2 NC 3 GND 4 8-Pin DFN(2) 8 TC4421 TC4422 VDD VDD 5-Pin TO-220 Tab is Common to VDD TC4421 TC4422 7 6 5 OUTPUT OUTPUT OUTPUT OUTPUT GND GND TC4421 TC4422 Note 1: Duplicate pins must both be connected for proper operation. 2: Exposed pad of the DFN package is electrically isolated.  2004 Microchip Technology Inc. INPUT GND VDD GND OUTPUT DS21420D-page 1 TC4421/TC4422 Functional Block Diagram VDD TC4421 Inverting 200 µA 300 mV Output Input 4.7V TC4422 Non-Inverting GND Effective Input C = 25 pF DS21420D-page 2  2004 Microchip Technology Inc. TC4421/TC4422 1.0 ELECTRICAL CHARACTERISTICS † Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings† Supply Voltage ..................................................... +20V Input Voltage .................... (VDD + 0.3V) to (GND – 5V) Input Current (VIN > VDD)................................... 50 mA Package Power Dissipation (TA ≤ 70°C) 5-Pin TO-220 .................................................... 1.6W DFN .............................................................. Note 2 PDIP ............................................................ 730 mW SOIC............................................................ 750 mW Package Power Dissipation (TA ≤ 25°C) 5-Pin TO-220 (With Heatsink) ........................ 12.5W Thermal Impedances (To Case) 5-Pin TO-220 RθJ-C ...................................... 10°C/W DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V ≤ VDD ≤ 18V. Parameters Input Logic ‘1’, High Input Voltage Logic ‘0’, Low Input Voltage Input Current Output High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Continuous Output Current Latch-Up Protection Withstand Reverse Current Switching Time (Note 1) Rise Time Fall Time Delay Time Delay Time Power Supply Power Supply Current Operating Input Voltage Note 1: 2: 3: IS VDD — — 4.5 0.2 55 — 1.5 150 18 mA µA V VIN = 3V VIN = 0V tR tF tD1 tD2 — — — — 60 60 30 33 75 75 60 60 ns ns ns ns Figure 4-1, CL = 10,000 pF Figure 4-1, CL = 10,000 pF Figure 4-1 Figure 4-1 VOH VOL ROH ROL IPK IDC IREV VDD – 0.025 — — — — 2 — — — 1.4 0.9 9.0 — >1.5 — 0.025 — 1.7 — — — V V Ω Ω A A A DC TEST DC TEST IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V VDD = 18V 10V ≤ VDD ≤ 18V, TA = +25°C (TC4421/TC4422 CAT only) (Note 3) Duty cycle ≤ 2%, t ≤ 300 µsec VIH VIL IIN 2.4 — –10 1.8 1.3 — — 0.8 +10 V V µA 0V ≤ VIN ≤ VDD Sym Min Typ Max Units Conditions Switching times ensured by design. Package power dissipation is dependent on the copper pad area on the PCB. Tested during characterization, not production tested.  2004 Microchip Technology Inc. DS21420D-page 3 TC4421/TC4422 DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ VDD ≤ 18V. Parameters Input Logic ‘1’, High Input Voltage Logic ‘0’, Low Input Voltage Input Current Output High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Switching Time (Note 1) Rise Time Fall Time Delay Time Delay Time Power Supply Power Supply Current Operating Input Voltage Note 1: IS VDD — — 4.5 — — — 3 0.2 18 mA V VIN = 3V VIN = 0V tR tF tD1 tD2 — — — — 60 60 50 65 120 120 80 80 ns ns ns ns Figure 4-1, CL = 10,000 pF Figure 4-1, CL = 10,000 pF Figure 4-1 Figure 4-1 VOH VOL ROH ROL VDD – 0.025 — — — — — 2.4 1.8 — 0.025 3.6 2.7 V V Ω Ω DC TEST DC TEST IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V VIH VIL IIN 2.4 — –10 — — — — 0.8 +10 V V µA 0V ≤ VIN ≤ VDD Sym Min Typ Max Units Conditions Switching times ensured by design. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V. Parameters Temperature Ranges Specified Temperature Range (C) Specified Temperature Range (E) Specified Temperature Range (V) Maximum Junction Temperature Storage Temperature Range Package Thermal Resistances Thermal Resistance, 5L-TO-220 Thermal Resistance, 8L-6x5 DFN Thermal Resistance, 8L-PDIP Thermal Resistance, 8L-SOIC θJA θJA θJA θJA — — — — 71 33.2 125 120 — — — — °C/W °C/W °C/W °C/W Typical 4-layer board with vias to ground plane TA TA TA TJ TA 0 –40 –40 — –65 — — — — — +70 +85 +125 +150 +150 °C °C °C °C °C Sym Min Typ Max Units Conditions DS21420D-page 4  2004 Microchip Technology Inc. TC4421/TC4422 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V. 220 200 180 160 22,000 pF tFALL (nsec) 180 160 140 22,000 pF 120 100 80 60 4700 pF 40 20 1000 pF 10,000 pF tRISE (nsec) 140 120 100 80 60 40 20 0 4 10,000 pF 4700 pF 1000 pF 6 8 10 12 VDD (V) 14 16 18 0 4 6 8 10 12 VDD (V) 14 16 18 FIGURE 2-1: Voltage. 300 Rise Time vs. Supply FIGURE 2-4: Voltage. 300 Fall Time vs. Supply 5V 250 10V 200 150 15V 100 50 0 100 250 10V 200 150 5V tFALL (nsec) tRISE (nsec) 15V 100 50 0 100 1000 10,000 CLOAD (pF) 100,000 1000 10,000 CLOAD (pF) 100,000 FIGURE 2-2: Load. 90 80 70 60 Rise Time vs. Capacitive FIGURE 2-5: Load. 50 Fall Time vs. Capacitive CLOAD = 10,000 pF VDD = 15V CLOAD = 1000 pF 45 Time (nsec) Time (nsec) 40 tRISE 50 40 30 35 tD1 tD2 tFALL 30 -40 0 40 TA (°C) 80 120 25 4 6 8 10 12 14 16 18 VDD (V) FIGURE 2-3: Temperature. Rise and Fall Times vs. FIGURE 2-6: Supply Voltage. Propagation Delay vs.  2004 Microchip Technology Inc. DS21420D-page 5 TC4421/TC4422 Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V. 220 200 180 160 ISUPPLY (mA) 180 VDD = 18V 160 140 VDD = 18V 47,000 pF 22,000 pF 2 MHz 10,000 pF 140 120 100 80 60 40 20 0 100 1000 10,000 CLOAD (pF) 100,000 632 kHz 200 kHz 20 kHz 1.125 MHz 63.2 kHz ISUPPLY (mA) 120 100 80 60 40 20 0 10 470 pF 100 Frequency (kHz) 1000 4700 pF 0.1 µF FIGURE 2-7: Supply Current vs. Capacitive Load (VDD = 18V). 180 160 140 ISUPPLY (mA) FIGURE 2-10: Supply Current vs. Frequency (VDD = 18V). 180 160 140 VDD = 12V VDD = 12V 22,000 pF 10,000 pF 47,000 pF 100 80 60 40 20 0 2 MHz 63.2 kHz 1.125 MHz 632 kHz 200 kHz ISUPPLY (mA) 120 120 100 80 60 40 0.1 µF 4700 pF 20 kHz 20 0 470 pF 10 100 Frequency (kHz) 1000 100 1000 10,000 CLOAD (pF) 100,000 FIGURE 2-8: Supply Current vs. Capacitive Load (VDD = 12V). 100 90 80 70 VDD = 6V FIGURE 2-11: Supply Current vs. Frequency (VDD = 12V). 120 VDD = 6V 200 kHz 47,000 pF 22,000 pF 100 80 4700 pF 60 40 0.1 µF 20 kHz ISUPPLY (mA) 60 50 40 30 20 10 0 100 1000 10,000 CLOAD (pF) 2 MHz 632 kHz 63.2 kHz ISUPPLY (mA) 10,000 pF 20 470 pF 0 10 100,000 100 Frequency (kHz) 1000 FIGURE 2-9: Supply Current vs. Capactive Load (VDD = 6V). FIGURE 2-12: Supply Current vs. Frequency (VDD = 6V). DS21420D-page 6  2004 Microchip Technology Inc. TC4421/TC4422 Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V. 120 110 100 90 Time (nsec) 50 VDD = 10V CLOAD = 10,000 pF 45 40 35 VDD = 18V CLOAD = 10,000 pF VIN = 5V 70 60 50 40 30 20 10 0 1 2 3 4 5 6 7 8 Input Amplitude (V) 9 10 tD1 tD2 Time (nsec) 80 tD2 30 25 20 –60 –40 –20 tD1 0 20 40 TA (°C) 60 80 100 120 FIGURE 2-13: Amplitude. 10-6 Propagation Delay vs. Input FIGURE 2-16: Temperature. 103 Propagation Delay vs. VDD = 18V 10-7 IQUIESCENT (µA) A•sec Input = 1 102 Input = 0 10-8 4 6 8 10 12 VDD (V) 14 16 18 -60 -40 -20 0 20 40 60 80 100 120 NOTE: The values on this graph represent the loss seen by the driver during a complete cycle. For the loss in a single transition, divide the stated value by 2. TJ (°C) FIGURE 2-17: vs. Temperature. Quiescent Supply Current FIGURE 2-14: Supply Voltage. 6 5.5 5 4.5 RDS(ON) (Ω) Crossover Energy vs. 6 5.5 5 TJ = 150°C 4.5 RDS(ON) (Ω) 4 3.5 3 2.5 2 1.5 1 0.5 4 6 8 10 12 VDD (V) 14 16 18 TJ = 25°C 4 3.5 3 2.5 2 1.5 1 0.5 4 6 8 10 12 VDD (V) 14 16 18 TJ = 25°C TJ = 150°C FIGURE 2-15: High-State Output Resistance vs. Supply Voltage. FIGURE 2-18: Low-State Output Resistance vs. Supply Voltage.  2004 Microchip Technology Inc. DS21420D-page 7 TC4421/TC4422 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: Pin No. 8-Pin PDIP, SOIC PIN FUNCTION TABLE Pin No. 8-Pin DFN Pin No. 5-Pin TO-220 Symbol Description 1 2 3 4 5 6 7 8 — — 1 2 3 4 5 6 7 8 PAD — — 1 — 2 4 5 — 3 — TAB VDD INPUT NC GND GND OUTPUT OUTPUT VDD NC VDD Supply input, 4.5V to 18V Control input, TTL/CMOS compatible input No connection Ground Ground CMOS push-pull output CMOS push-pull output Supply input, 4.5V to 18V Exposed metal pad Metal tab is at the VDD potential 3.1 Supply Input (VDD) 3.3 CMOS Push-Pull Output The VDD input is the bias supply for the MOSFET driver and is rated for 4.5V to 18V with respect to the ground pin. The VDD input should be bypassed to ground with a local ceramic capacitor. The value of the capacitor should be chosen based on the capacitive load that is being driven. A minimum value of 1.0 µF is suggested. The MOSFET driver output is a low-impedance, CMOS, push-pull style output capable of driving a capacitive load with 9.0A peak currents. The MOSFET driver output is capable of withstanding 1.5A peak reverse currents of either polarity. 3.4 3.2 Control Input The MOSFET driver input is a high-impedance, TTL/CMOS compatible input. The input also has 300 mV of hysteresis between the high and low thresholds that prevents output glitching even when the rise and fall time of the input signal is very slow. Ground The ground pins are the return path for the bias current and for the high peak currents that discharge the load capacitor. The ground pins should be tied into a ground plane or have very short traces to the bias supply source return. 3.5 Exposed Metal Pad The exposed metal pad of the 6x5 DFN package is not internally connected to any potential. Therefore, this pad can be connected to a ground plane or other copper plane on a printed circuit board to aid in heat removal from the package. DS21420D-page 8  2004 Microchip Technology Inc. TC4421/TC4422 4.0 APPLICATIONS INFORMATION +5V Input VDD = 18V 4.7 µF 1 0.1 µF Input 2 6 7 CL = 10,000 pF 4 5 0V +18V Input: 100 kHz, square wave, tRISE = tFALL ≤ 10 nsec Output 0V 10% 10% tD1 90% tR tD2 90% tF 10% +5V Input 90% 8 0.1 µF Output 0V +18V Output 0V 10% 10% 10% tD1 tF 90% tD2 tR 90% 90% Inverting Driver TC4421 Note: Pinout shown is for the DFN, PDIP and SOIC packages. Non-Inverting Driver TC4422 FIGURE 4-1: Switching Time Test Circuits.  2004 Microchip Technology Inc. DS21420D-page 9 TC4421/TC4422 5.0 5.1 PACKAGING INFORMATION Package Marking Information 5-Lead TO-220 Example: XXXXXXXXX XXXXXXXXX YYWWNNN TC4421CAT XXXXXXXXX 0420256 8-Lead DFN Example: XXXXXXX XXXXXXX XXYYWW NNN TC4421 EMF 0420 256 8-Lead PDIP (300 mil) XXXXXXXX XXXXXNNN YYWW Example: TC4421 CPA256 0420 8-Lead SOIC (208 mil) Example: XXXXXXXX XXXXXXXX YYWWNNN GTC4421 ESM 0420256 Legend: XX...X YY WW NNN Customer specific information* Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * Standard OTP marking consists of Microchip part number, year code, week code, and traceability code. DS21420D-page 10  2004 Microchip Technology Inc. TC4421/TC4422 5-Lead Plastic Transistor Outline (AT) (TO-220) L H1 Q b e3 e e1 E EJECTOR PIN ØP a (5X) C1 J1 A F D Lead Pitch Overall Lead Centers Space Between Leads Overall Height Overall Width Overall Length Flag Length Flag Thickness Through Hole Center Through Hole Diameter Lead Length Base to Bottom of Lead Lead Thickness Lead Width Mold Draft Angle Units Dimension Limits e e1 e3 A E D H1 F Q P L J1 C1 b a INCHES* MAX MIN .060 .072 .263 .273 .030 .040 .190 .160 .385 .415 .560 .590 .234 .258 .045 .055 .103 .113 .146 .156 .560 .540 .090 .115 .022 .014 .025 .040 3° 7° MILLIMETERS MIN MAX 1.52 1.83 6.68 6.93 0.76 1.02 4.06 4.83 9.78 10.54 14.22 14.99 5.94 6.55 1.14 1.40 2.62 2.87 3.71 3.96 13.72 14.22 2.29 2.92 0.36 0.56 0.64 1.02 3° 7° *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC equivalent: TO-220 Drawing No. C04-036  2004 Microchip Technology Inc. DS21420D-page 11 TC4421/TC4422 8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated DS21420D-page 12  2004 Microchip Technology Inc. TC4421/TC4422 8-Lead Plastic Dual In-line (P) – 300 mil (PDIP) E1 D 2 n 1 α E A A2 c L A1 β eB B1 p B Number of Pins Pitch Top to Seating Plane Molded Package Thickness Base to Seating Plane Shoulder to Shoulder Width Molded Package Width Overall Length Tip to Seating Plane Lead Thickness Upper Lead Width Lower Lead Width Overall Row Spacing Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic Units Dimension Limits n p A A2 A1 E E1 D L c B1 B eB α β MIN INCHES* NOM 8 .100 .155 .130 .313 .250 .373 .130 .012 .058 .018 .370 10 10 MAX MIN § .140 .115 .015 .300 .240 .360 .125 .008 .045 .014 .310 5 5 .170 .145 .325 .260 .385 .135 .015 .070 .022 .430 15 15 MILLIMETERS NOM 8 2.54 3.56 3.94 2.92 3.30 0.38 7.62 7.94 6.10 6.35 9.14 9.46 3.18 3.30 0.20 0.29 1.14 1.46 0.36 0.46 7.87 9.40 5 10 5 10 MAX 4.32 3.68 8.26 6.60 9.78 3.43 0.38 1.78 0.56 10.92 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-018  2004 Microchip Technology Inc. DS21420D-page 13 TC4421/TC4422 8-Lead Plastic Small Outline (SM) – Medium, 208 mil Body (SOIJ) (JEITA/EIAJ Standard, Formerly called SOIC) E E1 p D 2 n B 1 α c A A2 φ β L A1 Number of Pins Pitch Overall Height A .080 .070 Molded Package Thickness A2 .078 .069 Standoff A1 .002 .010 Overall Width E .300 .325 Molded Package Width E1 .201 .212 Overall Length D .202 .210 Foot Length L .020 .030 φ Foot Angle 0 8 c Lead Thickness .008 .010 Lead Width B .014 .020 α Mold Draft Angle Top 0 15 β Mold Draft Angle Bottom 0 15 *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. Drawing No. C04-056 Units Dimension Limits n p MIN INCHES* NOM 8 .050 .075 .074 .005 .313 .208 .205 .025 4 .009 .017 12 12 MAX MIN MILLIMETERS NOM 8 1.27 1.78 1.97 1.75 1.88 0.05 0.13 7.62 7.95 5.11 5.28 5.13 5.21 0.51 0.64 0 4 0.20 0.23 0.36 0.43 0 12 0 12 MAX 2.03 1.98 0.25 8.26 5.38 5.33 0.76 8 0.25 0.51 15 15 DS21420D-page 14  2004 Microchip Technology Inc. TC4421/TC4422 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device X Temperature Range XX Package XXX Tape & Reel X PB Free Examples: a) TC4421CAT: 9A High-Speed Inverting MOSFET Driver, TO-220 package, 0°C to +70°C. Device: TC4421: TC4422: 9A High-Speed MOSFET Driver, Inverting 9A High-Speed MOSFET Driver, Non-Inverting b) TC4421ESMG: 9A High-Speed Inverting MOSFET Driver, PB Free SOIC package, -40°C to +85°C. TC4421VMF: 9A High-Speed Inverting MOSFET Driver, DFN package, -40°C to +125°C. 9A High-Speed Non-Inverting MOSFET Driver, PDIP package, -40°C to +125°C. 9A High-Speed Non-Inverting MOSFET Driver, PDIP package, -40°C to +85°C. 9A High-Speed Inverting MOSFET Driver, DFN package, -40°C to +85°C. Temperature Range: C E V = 0°C to +70°C (PDIP and TO-220 Only) = -40°C to +85°C = -40°C to +125°C c) Package: AT = TO-220, 5-lead (C-Temp Only) MF = Dual, Flat, No-Lead (6x5 mm Body), 8-lead MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead (Tape and Reel) PA = Plastic DIP (300 mil Body), 8-lead SM = Plastic SOIC (208 mil Body), 8-lead SM713 = Plastic SOIC (208 mil Body), 8-lead (Tape and Reel) a) TC4422VPA: b) TC4422EPA: PB Free G = Lead-Free device = Blank * Available on selected packages. Contact your local sales representative for availability c) TC4422EMF: Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  2004 Microchip Technology Inc. DS21420D-page 15 TC4421/TC4422 NOTES: DS21420D-page 16  2004 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • • Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” • • • Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2004, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company’s quality system processes and procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.  2004 Microchip Technology Inc. DS21420D-page 17 WORLDWIDE SALES AND SERVICE AMERICAS Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: www.microchip.com Atlanta Alpharetta, GA Tel: 770-640-0034 Fax: 770-640-0307 Boston Westford, MA Tel: 978-692-3848 Fax: 978-692-3821 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Farmington Hills, MI Tel: 248-538-2250 Fax: 248-538-2260 Kokomo Kokomo, IN Tel: 765-864-8360 Fax: 765-864-8387 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 San Jose Mountain View, CA Tel: 650-215-1444 Fax: 650-961-0286 Toronto Mississauga, Ontario, Canada Tel: 905-673-0699 Fax: 905-673-6509 ASIA/PACIFIC Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8528-2100 Fax: 86-10-8528-2104 China - Chengdu Tel: 86-28-8676-6200 Fax: 86-28-8676-6599 China - Fuzhou Tel: 86-591-750-3506 Fax: 86-591-750-3521 China - Hong Kong SAR Tel: 852-2401-1200 Fax: 852-2401-3431 China - Shanghai Tel: 86-21-6275-5700 Fax: 86-21-6275-5060 China - Shenzhen Tel: 86-755-8290-1380 Fax: 86-755-8295-1393 China - Shunde Tel: 86-757-2839-5507 Fax: 86-757-2839-5571 China - Qingdao Tel: 86-532-502-7355 Fax: 86-532-502-7205 ASIA/PACIFIC India - Bangalore Tel: 91-80-2229-0061 Fax: 91-80-2229-0062 India - New Delhi Tel: 91-11-5160-8632 Fax: 91-11-5160-8632 Japan - Kanagawa Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan - Kaohsiung Tel: 886-7-536-4816 Fax: 886-7-536-4817 Taiwan - Taipei Tel: 886-2-2500-6610 Fax: 886-2-2508-0102 Taiwan - Hsinchu Tel: 886-3-572-9526 Fax: 886-3-572-6459 EUROPE Austria - Weis Tel: 43-7242-2244-399 Fax: 43-7242-2244-393 Denmark - Ballerup Tel: 45-4420-9895 Fax: 45-4420-9910 France - Massy Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Germany - Ismaning Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 England - Berkshire Tel: 44-118-921-5869 Fax: 44-118-921-5820 08/24/04 DS21420D-page 18  2004 Microchip Technology Inc.