TC4422EPA

M Features • • • • TC4421/TC4422 Package Type TO-220-5 8-Pin PDIP/CERDIP VDD 1 INPUT 2 8 VDD 9A High-Speed MOSFET Drivers Applications • • • • • Line Drivers for Extra-Heavily-Loaded Lines Pulse Generators Driving the Largest MOSFETs and IGBTs Local Power ON/OFF Switch Motor and Solenoid Driver NC = No connection NOTE: Duplicate pins must both be connected for proper operation. General Description The TC4421/TC4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over-dissipation – they cannot be latched under any conditions within their power and voltage ratings; they are not subject to damage or improper operation when up to 5V of ground bounce is present on their ground terminals; they can accept, without either damage or logic upset, more than 1A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4kV of electrostatic discharge. The TC4421/TC4422 inputs may be driven directly from either TTL or CMOS (3V to 18V). In addition, 300mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. Device Selection Table Part Number TC4421CAT TC4421CPA TC4421EPA TC4421MJA TC4422CAT TC4422CPA TC4422EPA TC4422MJA Package 5-Pin TO-220 8-Pin PDIP 8-Pin PDIP 8-Pin CERDIP 5-Pin TO-220 8-Pin PDIP 8-Pin PDIP 8-Pin CERDIP Temp. Range 0°C to +70°C 0°C to +70°C -40°C to +85°C -55°C to +125°C 0°C to +70°C 0°C to +70°C -40°C to +85°C -55°C to +125°C Functional Block Diagram Inverting VDD 300mV Output Input 4.7V Noninverting TC4421/TC4422 Inverting/Noninverting GND Effective Input C = 25pF  2002 Microchip Technology Inc. INPUT GND VDD GND OUTPUT Tough CMOS Construction High Peak Output Current: 9A High Continuous Output Current: 2A Max Fast Rise and Fall Times: - 30nsec with 4,700pF Load - 180nsec with 47,000pF Load • Short Internal Delays: 30nsec Typ. • Low Output Impedance: 1.4Ω Typ. TC4421 TC4422 Tab is Common to VDD NC 3 GND 4 TC4421 TC4422 7 OUTPUT 6 OUTPUT 5 GND DS21420B-page 1 TC4421/TC4422 1.0 ELECTRICAL CHARACTERISTICS *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings* Supply Voltage .....................................................+20V Input Voltage .................... (VDD + 0.3V) to (GND – 5V) Input Current (VIN > VDD) ....................................50mA Package Power Dissipation (TA ≤ 70°C) PDIP .........................................................730mW CERDIP....................................................800mW 5-Pin TO-220................................................1.6W Package Power Dissipation (TA ≤ 25°C) 5-Pin TO-220 (With Heatsink) ....................12.5W Derating Factors (To Ambient) PDIP ........................................................8mW/°C CERDIP................................................6.4mW/°C 5-Pin TO-220.........................................12mW/°C Thermal Impedances (To Case) 5-Pin TO-220 RθJ-C ..................................10°C/W Operating Temperature Range (Ambient) C Version......................................... 0°C to +70°C E Version ......................................-40°C to +85°C M Version ...................................-55°C to +125°C Storage Temperature Range ..............-65°C to +150°C TC4421/TC4422 ELECTRICAL SPECIFICATIONS Electrical Characteristics: TA = +25°C, with 4.5V ≤ VDD ≤ 18V, unless otherwise noted. Symbol Input VIH VIL IIN Output VOH VOL RO RO IPK IDC IREV High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Continuous Output Current Latch-Up Protection Withstand Reverse Current Rise Time Fall Time Delay Time Delay Time 1: Switching times ensured by design. Parameter Min Typ Max Units Test Conditions Logic 1, High Input Voltage Logic 0, Low Input Voltage Input Current 2.4 — -10 VDD – 0.025 — — — — 2 — 1.8 1.3 — — — 1.4 0.9 9 — >1.5 — 0.8 10 — 0.025 — 1.7 — — — V V µA 0V ≤ VIN ≤ VDD Figure 3-1 Figure 3-1 IOUT = 10mA, VDD = 18V IOUT = 10mA, VDD = 18V VDD = 18V 10V ≤ VDD ≤ 18V, TA = +25°C (TC4421/TC4422 CAT only) Duty cycle ≤ 2%, t ≤ 300µsec V V Ω Ω A A A Switching Time (Note 1) tR tF tD1 tD2 Note — — — — 60 60 30 33 75 75 60 60 nsec nsec nsec nsec Figure 3-1, CL = 10,000pF Figure 3-1, CL = 10,000pF Figure 3-1 Figure 3-1 DS21420B-page 2  2002 Microchip Technology Inc. TC4421/TC4422 TC4421/TC4422 ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Characteristics: TA = +25°C, with 4.5V ≤ VDD ≤ 18V, unless otherwise noted. Symbol Power Supply IS VDD Symbol Input VIH VIL IIN Output VOH VOL RO RO tR tF tD1 tD2 IS VDD Note 1: Parameter Min Typ Max Units Test Conditions Power Supply Current Operating Input Voltage — — 4.5 0.2 55 — 1.5 150 18 mA µA V VIN = 3V VIN = 0V Electrical Characteristics: Over operating temperature range with 4.5V ≤ VDD ≤ 18V, unless otherwise noted. Parameter Min Typ Max Units Test Conditions Logic 1, High Input Voltage Logic 0, Low Input Voltage Input Current High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Rise Time Fall Time Delay Time Delay Time Power Supply Current Operating Input Voltage Switching times ensured by design. 2.4 — -10 VDD – 0.025 — — — — — — — — — 4.5 — — — — — 2.4 1.8 60 60 50 65 0.45 0.06 — — 0.8 10 — 0.025 3.6 2.7 120 120 80 80 3 0.2 18 V V µA 0V ≤ VIN ≤ VDD Figure 3-1 Figure 3-1 IOUT = 10mA, VDD = 18V IOUT = 10mA, VDD = 18V Figure 3-1, CL = 10,000pF Figure 3-1, CL = 10,000pF Figure 3-1 Figure 3-1 VIN = 3V VIN = 0V V V Ω Ω Switching Time (Note 1) nsec nsec nsec nsec mA V Power Supply  2002 Microchip Technology Inc. DS21420B-page 3 TC4421/TC4422 2.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 2-1. TABLE 2-1: Pin No. (8-Pin PDIP, CERDIP) 1 2 3 4 5 6 7 8 PIN FUNCTION TABLE Symbol VDD INPUT NC GND GND OUTPUT OUTPUT VDD Supply input, 4.5V to 18V. Control input, TTL/CMOS compatible input. No Connection. Ground. Ground. CMOS totem pole output. CMOS totem pole output. Supply input, 4.5V to 18V. Description Pin No. (5-Pin TO-220) 1 2 3 4 5 Symbol INPUT GND VDD GND OUTPUT Description Control input, TTL/CMOS compatible input. Ground. Supply input, 4.5V to 18V. Ground CMOS totem pole output. DS21420B-page 4  2002 Microchip Technology Inc. TC4421/TC4422 3.0 APPLICATIONS INFORMATION SWITCHING TIME TEST CIRCUITS VDD = 18V FIGURE 3-1: 0.1µF 1 8 +5V 90% Input 0.1µF 2 6 7 0.1µF 0V +18V 10% tD1 90% tF tD2 tR 90% Input Output Output CL = 10,000pF 0V 10% 10% TC4421 4 5 Input: 100kHz, square wave, tRISE = tFALL ≤ 10nsec  2002 Microchip Technology Inc. DS21420B-page 5 TC4421/TC4422 4.0 Note: TYPICAL CHARACTERISTICS The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Rise Time vs. Supply Voltage 220 200 180 160 tRISE (nsec) 140 120 100 80 60 40 20 0 4 6 8 10 12 VDD (V) 14 16 18 10,000pF 4700pF 1000pF 22,000pF tFALL (nsec) 180 160 140 Fall Time vs. Supply Voltage 22,000pF 120 100 80 60 4700pF 40 20 1000pF 0 4 6 8 10 12 VDD (V) 14 16 18 10,000pF Rise TIme vs. Capacitive Load 300 5V 250 10V tFALL (nsec) 250 300 Fall TIme vs. Capacitive Load 5V 10V 200 150 15V 100 50 0 100 tRISE (nsec) 200 150 15V 100 50 0 100 1000 10,000 CLOAD (pF) 100,000 1000 10,000 CLOAD (pF) 100,000 Rise and Fall Times vs. Temperature 90 80 70 60 Propagation Delay vs. Supply Voltage 50 CLOAD = 1000pF CLOAD = 10,000pF VDD = 15V 45 TIME (nsec) TIME (nsec) 40 tRISE 50 40 30 35 tD1 tD2 tFALL 30 -40 0 40 TA (°C) 80 120 25 4 6 8 10 12 14 16 18 VDD (V) DS21420B-page 6  2002 Microchip Technology Inc. TC4421/TC4422 TYPICAL CHARACTERISTICS (CONTINUED) Supply Current vs. Capacitive Load 220 200 180 160 ISUPPLY (mA) VDD = 18V 180 160 140 ISUPPLY (mA) VDD = 18V 47,000pF Supply Current vs. Frequency 22,000pF 2MHz 10,000pF 140 120 100 80 60 40 20 0 100 1000 10,000 CLOAD (pF) 100,000 632kHz 200kHz 20kHz 1.125MHz 63.2kHz 120 100 80 60 40 20 0 10 470pF 100 FREQUENCY (kHz) 1000 4700pF 0.1µF Supply Current vs. Capacitive Load 180 160 140 ISUPPLY (mA) VDD = 12V Supply Current vs. Frequency 180 160 140 ISUPPLY (mA) VDD = 12V 22,000pF 10,000pF 47,000pF 120 100 80 60 40 20 0 1.125MHz 632kHz 200kHz 2MHz 63.2kHz 120 100 80 60 40 0.1µF 4700pF 20kHz 20 0 470pF 10 100 FREQUENCY (kHz) 1000 100 1000 10,000 CLOAD (pF) 100,000 Supply Current vs. Capacitive Load 100 90 80 70 60 50 40 30 20 10 0 100 1000 10,000 CLOAD (pF) 20kHz 2MHz 632kHz 63.2kHz VDD = 6V Supply Current vs. Frequency 120 VDD = 6V 200kHz 47,000pF 22,000pF 100 80 4700pF 60 40 0.1µF 20 470pF 100,000 ISUPPLY (mA) ISUPPLY (mA) 10,000pF 0 10 100 FREQUENCY (kHz) 1000  2002 Microchip Technology Inc. DS21420B-page 7 TC4421/TC4422 TYPICAL CHARACTERISTICS (CONTINUED) Propagation Delay vs. Input Amplitude 120 110 100 90 TIME (nsec) 70 60 50 40 30 20 10 0 1 2 3 4 5 6 INPUT (V) 7 8 9 10 20 -60 -40 -20 0 20 40 TA (°C) 60 80 100 120 TIME (nsec) 50 Propagation Delay vs. Temperature VDD = 18V CLOAD = 10,000pF VIN = 5V VDD = 10V CLOAD = 10,000pF 45 40 35 80 tD2 tD1 tD2 30 25 tD1 10-6 Crossover Energy vs. Supply Voltage Quiescent Supply Current vs. Temperature 103 VDD = 18V 10-7 IQUIESCENT (µA) A•sec INPUT = 1 102 INPUT = 0 10-8 4 6 8 10 12 VDD (V) 14 16 18 -60 -40 -20 0 20 40 60 80 100 120 NOTE: The values on this graph represent the loss seen by the driver during a complete cycle. For the loss in a single transition, divide the stated value by 2. TJ (°C) High-State Output Resistance vs. Supply Voltage 6 5.5 5 4 3.5 3 2.5 2 1.5 1 0.5 4 6 8 10 12 VDD (V) 14 16 18 TJ = 25°C Low-State Output Resistance vs. Supply Voltage 6 5.5 5 4.5 RDS(ON) (Ω) 4.5 RDS(ON) (Ω) TJ = 150°C 4 3.5 3 2.5 2 1.5 1 0.5 4 6 8 10 12 VDD (V) 14 16 18 TJ = 25°C TJ = 150°C DS21420B-page 8  2002 Microchip Technology Inc. TC4421/TC4422 5.0 5.1 PACKAGING INFORMATION Package Marking Information Package marking data not available at this time. 5.2 Package Dimensions 8-Pin Plastic DIP PIN 1 .260 (6.60) .240 (6.10) .045 (1.14) .030 (0.76) .400 (10.16) .348 (8.84) .200 (5.08) .140 (3.56) .150 (3.81) .115 (2.92) .070 (1.78) .040 (1.02) .310 (7.87) .290 (7.37) .040 (1.02) .020 (0.51) .015 (0.38) .008 (0.20) .400 (10.16) .310 (7.87) 3° MIN. .110 (2.79) .090 (2.29) .022 (0.56) .015 (0.38) Dimensions: inches (mm)  2002 Microchip Technology Inc. DS21420B-page 9 TC4421/TC4422 Package Dimensions (Continued) 8-Pin CERDIP (Narrow) .110 (2.79) .090 (2.29) PIN 1 .300 (7.62) .230 (5.84) .055 (1.40) MAX. .400 (10.16) .370 (9.40) .200 (5.08) .160 (4.06) .200 (5.08) .125 (3.18) .020 (0.51) MIN. .320 (8.13) .290 (7.37) .040 (1.02) .020 (0.51) .015 (0.38) .008 (0.20) .400 (10.16) .320 (8.13) .065 (1.65) .020 (0.51) .045 (1.14) .016 (0.41) Dimensions: inches (mm) .150 (3.81) MIN. 3° MIN. 5-Pin TO-220 .185 (4.70) .165 (4.19) .117 (2.97) .103 (2.62) .415 (10.54) .390 (9.91) .156 (3.96) .140 (3.56) DIA. .055 (1.40) .045 (1.14) .293 (7.44) .204 (5.18) .613 (15.57) .569 (14.45) 3° - 7.5° 5 PLCS. .590 (14.99) .482 (12.24) .037 (0.95) .025 (0.64) .025 (0.64) .012 (0.30) .072 (1.83) .062 (1.57) .273 (6.93) .263 (6.68) .115 (2.92) .087 (2.21) PIN 1 Dimensions: inches (mm) DS21420B-page 10  2002 Microchip Technology Inc. TC4421/TC4422 Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  2002 Microchip Technology Inc. DS21420B-page11 TC4421/TC4422 NOTES: DS21420B-page12  2002 Microchip Technology Inc. TC4421/TC4422 Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, FilterLab, KEELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER, PICSTART, PRO MATE, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, MXDEV, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified.  2002 Microchip Technology Inc. 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Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 Italy Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883 Toronto 6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 India Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O’Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062 United Kingdom Arizona Microchip Technology Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820 03/01/02 ' !$ ' DS21420B-page 14  2002 Microchip Technology Inc.