TC4429M

TC4420M/TC4429M 6A High-Speed MOSFET Drivers Features • Latch-Up Protected: Will Withstand >1.5A Reverse Output Current • Logic Input: Will Withstand Negative Swing Up To 5V • ESD Protected: 4 kV • Matched Rise and Fall Times: - 25 ns (2500 pF load) • High Peak Output Current: 6A • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Capacitive Load Drive Capability: 10,000 pF • Short Delay Time: 55 ns (typ.) • CMOS/TTL-Compatible Input • Low Supply Current With Logic ‘1’ Input: - 450 µA (typ.) • Low Output Impedance: 2.5Ω • Output Voltage Swing to Within 25 mV of Ground or VDD • Wide Operating Temperature Range: - -55°C to +125°C • See TC4420/TC4429 Data Sheet (DS21419) for additional temperature range and package offerings. General Description The TC4420M/TC4429M are 6A (peak), single-output MOSFET drivers. The TC4429M is an inverting driver (pin-compatible with the TC429M), while the TC4420M is a non-inverting driver. These drivers are fabricated in CMOS for lower power and more efficient operation versus bipolar drivers. Both devices have TTL/CMOS-compatible inputs, which can be driven as high as VDD + 0.3V or as low as -5V without upset or damage to the device. This eliminates the need for external level-shifting circuitry and its associated cost and size. The output swing is rail-to-rail, ensuring better drive voltage margin, especially during power-up/power-down sequencing. The propagational delay time is only 55 ns (typ.), while the output rise and fall times are only 25 ns (typ.) into 2500 pF across the usable power supply range. Unlike other drivers, the TC4420M/TC4429M are virtually latch-up proof. They replace three or more discrete components, saving PCB area and parts while improving overall system reliability. Package Types: 8-Pin CERDIP VDD 1 8 7 6 5 TC4420M VDD OUTPUT OUTPUT GND TC4429M VDD OUTPUT OUTPUT GND Applications • • • • Switch-mode Power Supplies Motor Controls Pulse Transformer Driver Class D Switching Amplifiers INPUT 2 NC 3 GND 4 Note: Duplicate pins must both be connected for proper operation. © 2005 Microchip Technology Inc. TC4420M TC4429M DS21933A-page 1 TC4420M/TC4429M Functional Block Diagram VDD 500 µA 300 mV Output TC4429M Inverting Input 4.7V TC4420M Non-Inverting GND Effective Input C = 38 pF DS21933A-page 2 © 2005 Microchip Technology Inc. TC4420M/TC4429M 1.0 ELECTRICAL CHARACTERISTICS † Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings† Supply Voltage ..................................................... +20V Input Voltage ....................................-5V to VDD + 0.3V Input Current (VIN > VDD)................................... 50 mA DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V ≤ VDD ≤ 18V. Parameters Input Logic ‘1’, High Input Voltage Logic ‘0’, Low Input Voltage Input Voltage Range Input Current Output High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Latch-Up Protection Withstand Reverse Current Switching Time (Note 1) Rise Time Fall Time Delay Time Delay Time Power Supply Power Supply Current Operating Input Voltage Note 1: IS VDD — — 4.5 0.45 55 — 1.5 150 18 mA µA V VIN = 3V VIN = 0V tR tF tD1 tD2 — — — — 25 25 55 55 35 35 75 75 ns. ns. ns. ns. Figure 4-1, CL = 2,500 pF Figure 4-1, CL = 2,500 pF Figure 4-1 Figure 4-1 VOH VOL ROH ROL IPK IREV VDD – 0.025 — — — — — — — 2.1 1.5 6.0 > 1.5 — 0.025 2.8 2.5 — — V V Ω Ω A A DC TEST DC TEST IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V VDD = 18V Duty cycle ≤ 2%, t ≤ 300 µs VIH VIL VIN IIN 2.4 — -5 -10 1.8 1.3 — — — 0.8 VDD + 0.3 +10 V V V µA 0V ≤ VIN ≤ VDD Sym Min Typ Max Units Conditions Switching times ensured by design. © 2005 Microchip Technology Inc. DS21933A-page 3 TC4420M/TC4429M DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ VDD ≤ 18V. Parameters Input Logic ‘1’, High Input Voltage Logic ‘0’, Low Input Voltage Input Voltage Range Input Current Output High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Switching Time (Note 1) Rise Time Fall Time Delay Time Delay Time Power Supply Power Supply Current Operating Input Voltage Note 1: IS VDD — — 4.5 0.45 60 — 3 400 18 mA µA V VIN = 3V VIN = 0V tR tF tD1 tD2 — — — — 32 34 50 65 60 60 100 100 ns. ns. ns. ns. Figure 4-1, CL = 2,500 pF Figure 4-1, CL = 2,500 pF Figure 4-1 Figure 4-1 VOH VOL ROH ROL VDD – 0.025 — — — — — 3 2.3 — 0.025 5 5 V V Ω Ω DC TEST DC TEST IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V VIH VIL VIN IIN 2.4 — -5 -10 — — — — — 0.8 VDD + 0.3 +10 V V V µA 0V ≤ VIN ≤ VDD Sym Min Typ Max Units Conditions Switching times ensured by design. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V. Parameters Temperature Ranges Specified Temperature Range (M) Maximum Junction Temperature Storage Temperature Range Package Thermal Resistances Thermal Resistance, 8L-CERDIP θJA — 150 — °C/W TA TJ TA -55 — -65 — — — +125 +150 +150 °C °C °C Sym Min Typ Max Units Conditions DS21933A-page 4 © 2005 Microchip Technology Inc. TC4420M/TC4429M 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V. 120 100 100 80 60 C L = 10,000 pF 80 TIME (nsec) TIME (nsec) 60 C L = 10,000 pF C L = 4700 pF 40 40 C L = 4700 pF C L = 2200 pF C L = 2200 pF 20 0 20 5 7 9 11 13 15 0 5 SUPPLY VOLTAGE (V) 7 9 11 13 SUPPLY VOLTAGE (V) 15 FIGURE 2-1: Voltage. 100 80 60 TIME (nsec) Rise Time vs. Supply FIGURE 2-4: Voltage. 100 80 60 TIME (nsec) Fall Time vs. Supply 40 VDD = 5V 40 VDD = 5V VDD = 12V VDD = 18V VDD = 12V VDD = 18V 20 20 10 1000 CAPACITIVE LOAD (pF) 10,000 10 1000 CAPACITIVE LOAD (pF) 10,000 FIGURE 2-2: Load. 50 Rise Time vs. Capacitive FIGURE 2-5: Load. 84 Fall Time vs. Capacitive C L = 2200 pF VDD = 18V VDD = 15V SUPPLY CURRENT (mA) 40 70 56 42 DELAY TIME (nsec) t D2 30 t D1 20 500 kHz 28 10 200 kHz 14 20 kHz 0 –60 –20 20 60 TA (°C) 100 140 0 0 100 1000 CAPACITIVE LOAD (pF) 10,000 FIGURE 2-3: Temperature. Propagation Delay Time vs. FIGURE 2-6: Capacitive Load. Supply Current vs. © 2005 Microchip Technology Inc. DS21933A-page 5 TC4420M/TC4429M Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V. 50 C L = 2200 pF VDD = 18V 40 5 100 mA TIME (nsec) 4 ROUT (Ω ) 30 t FALL t RISE 10 mA 50 mA 20 3 10 0 –60 –20 20 60 TA (°C) 100 140 2 5 7 9 11 13 SUPPLY VOLTAGE (V) 15 FIGURE 2-7: Temperature. 65 60 Rise and Fall Times vs. FIGURE 2-10: High-State Output Resistance vs. Supply Voltage. 200 LOAD = 2200 pF 160 DELAY TIME (nsec) 55 50 45 40 35 tD2 DELAY TIME (nsec) 120 INPUT 2.4V INPUT 3V 80 INPUT 5V 40 INPUT 8V AND 10V tD1 0 4 6 8 10 12 14 16 SUPPLY VOLTAGE (V) 18 5 6 7 8 9 10 11 12 13 14 15 VDD (V) FIGURE 2-8: Supply Voltage. 1000 Propagation Delay Time vs. FIGURE 2-11: Effect of Input Amplitude on Propagation Delay. 2.5 CL = 2200 pF SUPPLY CURRENT (mA) 18V 100 10V 2 ROUT (Ω ) 5V 100 mA 50 mA 1.5 10 10 mA 0 0 100 1000 FREQUENCY (kHz) 10,000 1 5 7 9 11 13 SUPPLY VOLTAGE (V) 15 FIGURE 2-9: Frequency. Supply Current vs. FIGURE 2-12: Low-State Output Resistance vs. Supply Voltage. DS21933A-page 6 © 2005 Microchip Technology Inc. TC4420M/TC4429M Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V. 4 -8 Crossover Area (A•S) x 10 3 2 1 0 5 6 78 9 10 11 12 13 14 15 SUPPLY VOLTAGE (V) * The values on this graph represent the loss seen by the driver during one complete cycle. For a single transition, divide the value by 2. FIGURE 2-13: Crossover Energy*. © 2005 Microchip Technology Inc. DS21933A-page 7 TC4420M/TC4429M 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: Pin No. 8-Pin CERDIP PIN FUNCTION TABLE Symbol Description 1 2 3 4 5 6 7 8 VDD INPUT NC GND GND OUTPUT OUTPUT VDD Supply input, 4.5V to 18V Control input, TTL/CMOS compatible input No Connection Ground Ground CMOS push-pull output CMOS push-pull output Supply input, 4.5V to 18V 3.1 Supply Input (VDD) 3.3 CMOS Push-Pull Output The VDD input is the bias supply for the MOSFET driver and is rated for 4.5V to 18V with respect to the ground pins. The VDD input should be bypassed to ground with a local ceramic capacitor. The value of the capacitor should be chosen based on the capacitive load that is being driven. A minimum value of 1.0 µF is suggested. The MOSFET driver output is a low-impedance, CMOS, push-pull style output capable of driving a capacitive load with 6.0A peak currents. The MOSFET driver output is capable of withstanding 1.5A peak reverse currents of either polarity. 3.4 3.2 Control Input The MOSFET driver input is a high-impedance, TTL/CMOS-compatible input. The input circuitry of the TC4420M/TC4429M MOSFET driver also has a “speed-up” capacitor. This helps to decrease the propagation delay times of the driver. Because of this, input signals with slow rising or falling edges should not be used, as this can result in double-pulsing of the MOSFET driver output. Ground The ground pins are the return path for the bias current and the high peak currents that discharge the load capacitor. The ground pins should be tied into a ground plane or have very short traces to the bias supply source return. DS21933A-page 8 © 2005 Microchip Technology Inc. TC4420M/TC4429M 4.0 APPLICATIONS INFORMATION +5V Input VDD = 18V 4.7 µF 1 0.1 µF Input 2 6 7 CL = 2,500 pF 4 5 0V +18V Input: 100 kHz, square wave, tRISE = tFALL ≤ 10 ns Output 0V 10% Non-Inverting Driver TC4420M 8 0.1 µF Output +5V Input 10% tD1 90% tR tD2 90% tF 10% 0V +18V Output 0V 10% Inverting Driver TC4429M 90% 10% 10% tD1 tF 90% tD2 tR 90% 90% FIGURE 4-1: Switching Time Test Circuits. © 2005 Microchip Technology Inc. DS21933A-page 9 TC4420M/TC4429M 5.0 5.1 PACKAGING INFORMATION Package Marking Information 8-Lead CERDIP (300 mil) Example: XXXXXXXX XXXXXNNN YYWW TC4420 e3 MJA^^256 0542 Legend: XX...X Y YY WW NNN e3 * Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. DS21933A-page 10 © 2005 Microchip Technology Inc. TC4420M/TC4429M 8-Lead Ceramic Dual In-line – 300 mil (CERDIP) E1 2 n 1 D E A2 A c eB A1 B1 B p L Number of Pins Pitch Top to Seating Plane Standoff § Shoulder to Shoulder Width Ceramic Pkg. Width Overall Length Tip to Seating Plane Lead Thickness Upper Lead Width Lower Lead Width Overall Row Spacing *Controlling Parameter JEDEC Equivalent: MS-030 Drawing No. C04-010 Units Dimension Limits n p A A1 E E1 D L c B1 B eB MIN .160 .020 .290 .230 .370 .125 .008 .045 .016 .320 INCHES* NOM 8 .100 .180 .030 .305 .265 .385 .163 .012 .055 .018 .360 MAX MIN .200 .040 .320 .300 .400 .200 .015 .065 .020 .400 MILLIMETERS NOM 8 2.54 4.06 4.57 0.51 0.77 7.37 7.75 5.84 6.73 9.40 9.78 3.18 4.13 0.20 0.29 1.14 1.40 0.41 0.46 8.13 9.15 MAX 5.08 1.02 8.13 7.62 10.16 5.08 0.38 1.65 0.51 10.16 © 2005 Microchip Technology Inc. DS21933A-page 11 TC4420M/TC4429M NOTES: DS21933A-page 12 © 2005 Microchip Technology Inc. TC4420M/TC4429M APPENDIX A: REVISION HISTORY Revision A (February 2005) • Original Release of this Document. © 2005 Microchip Technology Inc. DS21933A-page 13 TC4420M/TC4429M NOTES: DS21933A-page 14 © 2005 Microchip Technology Inc. TC4420M/TC4429M PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device and Temperature Range XX Package Examples: a) TC4420MJA: 6A High-Speed MOSFET Driver, Non-inverting, 8LD CERDIP package. Device and Temperature Range: TC4420M: 6A High-Speed MOSFET Driver, Non-Inverting, -55°C to +125°C TC4429M: 6A High-Speed MOSFET Driver, Inverting, -55°C to +125°C a) TC4429MJA: 6A High-Speed MOSFET Driver, Inverting, 8LD CERDIP package. Package: JA = Ceramic Dual In-line (300 mil Body), 8-lead © 2005 Microchip Technology Inc. DS21933A-page 15 TC4420M/TC4429M NOTES: DS21933A-page 16 © 2005 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • • Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” • • • Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance and WiperLock are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2005, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company’s quality system processes and procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. © 2005 Microchip Technology Inc. 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