TC4451VAT

TC4451/TC4452 12A High-Speed MOSFET Drivers Features • High Peak Output Current: 13A (typ.) • Low Shoot-Through/Cross-Conduction Current in Output Stage • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Continuous Output Current: 2.6A (max.) • Matched Fast Rise and Fall Times: - 21 ns with 10,000 pF Load - 42 ns with 22,000 pF Load • Matched Short Propagation Delays: 44 ns (typ.) • Low Supply Current: - With Logic ‘1’ Input – 140 μA (typ.) - With Logic ‘0’ Input – 40 μA (typ.) • Low Output Impedance: 0.9Ω (typ.) • Latch-Up Protected: Will Withstand 1.5A Output Reverse Current • Input Will Withstand Negative Inputs Up To 5V • Pin-Compatible with the TC4420/TC4429, TC4421/TC4422 and TC4421A/TC4422A MOSFET Drivers • Space-Saving, Thermally-Enhanced, 8-Pin DFN Package General Description The TC4451/TC4452 are single-output MOSFET drivers. These devices are high-current buffer/drivers capable of driving large MOSFETs and Insulated Gate Bipolar Transistors (IGBTs). The TC4451/TC4452 have matched output rise and fall times, as well as matched leading and falling-edge propagation delay times. The TC4451/TC4452 devices also have very low crossconduction current, reducing the overall power dissipation of the device. These devices are essentially immune to any form of upset, except direct overvoltage or over-dissipation. They cannot be latched under any conditions within their power and voltage ratings. These parts are not subject to damage or improper operation when up to 5V of ground bounce is present on their ground terminals. They can accept, without damage or logic upset, more than 1.5A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge. The TC4451/TC4452 inputs may be driven directly from either TTL or CMOS (3V to 18V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. With both surface-mount and pin-through-hole packages, in addition to a wide operating temperature range, the TC4451/TC4452 family of 12A MOSFET drivers fit into most any application where high gate/line capacitance drive is required. Applications • • • • • • Line Drivers for Extra Heavily-Loaded Lines Pulse Generators Driving the Largest MOSFETs and IGBTs Local Power ON/OFF Switch Motor and Solenoid Driver LF Initiator © 2006 Microchip Technology Inc. DS21987A-page 1 TC4451/TC4452 Package Types(1) 8-Pin TC4451 TC4452 PDIP/SOIC VDD INPUT NC GND 1 8 VDD 2 TC4451 7 OUTPUT 3 TC4452 6 OUTPUT 4 5 GND VDD OUTPUT OUTPUT GND VDD 1 INPUT 2 NC 3 GND 4 8-Pin DFN(2) 8 TC4451 TC4452 VDD VDD 5-Pin TO-220 Tab is Common to VDD TC4451 TC4452 TC4451 TC4452 7 6 5 OUTPUT OUTPUT OUTPUT OUTPUT GND GND Note 1: Duplicate pins must both be connected for proper operation. 2: Exposed pad of the DFN package is electrically isolated. Functional Block Diagram VDD TC4451 Inverting 140 μA 300 mV Cross-Conduction Reduction and Pre-Drive Circuitry TC4452 Non-Inverting 4.7V Output Output Input GND Effective Input C = 25 pF DS21987A-page 2 © 2006 Microchip Technology Inc. INPUT GND VDD GND OUTPUT TC4451/TC4452 1.0 ELECTRICAL CHARACTERISTICS † Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings † Supply Voltage ..................................................... +20V Input Voltage .................... (VDD + 0.3V) to (GND – 5V) Input Current (VIN > VDD)................................... 50 mA DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V ≤ VDD ≤ 18V. Parameters Input Logic ‘1’, High Input Voltage Logic ‘0’, Low Input Voltage Input Current Input Voltage Output High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Continuous Output Current Latch-Up Protection Withstand Reverse Current Switching Time (Note 1) Rise Time Fall Time Propagation Delay Time Propagation Delay Time Power Supply Power Supply Current Operating Input Voltage Note 1: 2: IS VDD — — 4.5 140 40 — 200 100 18.0 μA μA V VIN = 3V VIN = 0V tR tF tD1 tD2 — — — — 30 32 44 44 40 40 52 52 ns ns ns ns Figure 4-1, CL = 15,000 pF Figure 4-1, CL = 15,000 pF Figure 4-1, CL = 15,000 pF Figure 4-1, CL = 15,000 pF VOH VOL ROH ROL IPK IDC IREV VDD – 0.025 — — — — 2.6 — — — 1.0 0.9 13 — >1.5 — 0.025 1.5 1.5 — — — V V Ω Ω A A A DC Test DC Test IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V VDD = 18V 10V ≤ VDD ≤ 18V (Note 2, Note 3) Duty cycle ≤ 2%, t ≤ 300 μs VIH VIL IIN VIN 2.4 — –10 –5 1.5 1.3 — — — 0.8 +10 VDD + 0.3 V V μA V 0V ≤ VIN ≤ VDD Sym Min Typ Max Units Conditions Switching times ensured by design. Tested during characterization, not production tested. 3: Valid for AT and MF packages only. TA = +25°C. © 2006 Microchip Technology Inc. DS21987A-page 3 TC4451/TC4452 DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ VDD ≤ 18V. Parameters Input Logic ‘1’, High Input Voltage Logic ‘0’, Low Input Voltage Input Current Output High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Switching Time (Note 1) Rise Time Fall Time Propagation Delay Time Propagation Delay Time Power Supply Power Supply Current Operating Input Voltage Note 1: IS VDD — — 4.5 Switching times ensured by design. 200 50 — 400 150 18.0 μA μA V VIN = 3V VIN = 0V tR tF tD1 tD2 — — — — 35 38 55 55 60 60 65 65 ns ns ns ns Figure 4-1, CL = 15,000 pF Figure 4-1, CL = 15,000 pF Figure 4-1, CL = 15,000 pF Figure 4-1, CL = 15,000 pF VOH VOL ROH ROL VDD – 0.025 — — — — — — — — 0.025 2.2 2.0 V V Ω Ω DC Test DC Test IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V VIH VIL IIN 2.4 — –10 — — — — 0.8 +10 V V μA 0V ≤ VIN ≤ VDD Sym Min Typ Max Units Conditions TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V. Parameters Temperature Ranges Specified Temperature Range (V) Maximum Junction Temperature Storage Temperature Range Package Thermal Resistances Thermal Resistance, 5L-TO-220 Thermal Resistance, 8L-6x5 DFN Thermal Resistance, 8L-PDIP Thermal Resistance, 8L-SOIC θJA θJA θJA θJA — — — — 71 33.2 125 155 — — — — °C/W °C/W °C/W °C/W Without heat sink Typical 4-layer board with vias to ground plane TA TJ TA –40 — –65 — — — +125 +150 +150 °C °C °C Sym Min Typ Max Units Conditions DS21987A-page 4 © 2006 Microchip Technology Inc. TC4451/TC4452 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V. 220 200 180 160 140 120 100 80 60 40 20 0 4 300 47,000 pF 250 Fall Time (ns) 200 150 100 50 Rise Time (ns) 5V 10V 22,000 pF 18V 10,000 pF 6 8 10 12 14 16 18 0 100 1000 10000 100000 Supply Voltage (V) Capacitive Load (pF) FIGURE 2-1: Voltage. 300 250 Rise Time (ns) 200 150 100 50 0 100 Rise Time vs. Supply FIGURE 2-4: Load. 40 Fall Time vs. Capacitive Rise and Fall Times (ns) VDD = 18V 5V 10V tRISE tFALL 30 20 10 0 18V 1000 10000 100000 -40 -25 -10 5 20 35 50 65 80 95 110 125 Capacitive Load (pF) Temperature (°C) FIGURE 2-2: Load. 220 200 180 160 140 120 100 80 60 40 20 0 4 Rise Time vs. Capacitive FIGURE 2-5: Temperature. 1E-07 10-7 Rise and Fall Times vs. 47,000 pF Crossover Energy (A·sec) Fall Time (ns) 22,000 pF 1E-08 10-8 10,000 pF 1E-09 10-9 6 8 10 12 14 16 18 4 6 8 10 12 14 16 18 Supply Voltage (V) Supply Voltage (V) FIGURE 2-3: Voltage. Fall Time vs. Supply FIGURE 2-6: Supply Voltage. Crossover Energy vs. © 2006 Microchip Technology Inc. DS21987A-page 5 TC4451/TC4452 Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V. 95 90 85 80 75 70 65 60 55 50 45 40 4 6 8 10 Propagation Delay (ns) CLOAD = 15,000 pF VIN = 5V 140 120 IQUIESCENT (μA) INPUT = High 100 80 60 40 20 INPUT = Low tD2 tD1 12 14 16 18 4 6 8 10 12 14 16 18 Supply Voltage (V) Supply Voltage (V) FIGURE 2-7: Supply Voltage. 100 95 90 85 80 75 70 65 60 55 50 45 40 2 3 4 Propagation Delay vs. FIGURE 2-10: Quiescent Supply Current vs. Supply Voltage. 220 200 180 160 140 120 100 80 60 40 20 Propagation Delay (ns) CLOAD = 15,000 pF VDD = 10V VDD = 18 V INPUT = High IQUIESCENT (μA) tD2 tD1 INPUT = Low 5 6 7 8 9 10 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (oC) Input Amplitude (V) FIGURE 2-8: Amplitude. 60 Propagation Delay (ns) 55 50 45 40 35 30 -40 -25 -10 5 tD1 tD2 Propagation Delay vs. Input FIGURE 2-11: vs. Temperature. 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 Quiescent Supply Current Input Threshold (V) VDD = 10V VIN = 5V CLOAD = 15,000 pF VDD = 12 V VIH VIL 20 35 50 65 o 80 95 110 125 -40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature (oC) Temperature ( C) FIGURE 2-9: Temperature. Propagation Delay vs. FIGURE 2-12: Temperature. Input Threshold vs. DS21987A-page 6 © 2006 Microchip Technology Inc. TC4451/TC4452 Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V. 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 4 300 Supply Current (mA) VDD = 18 V Input Threshold (V) 250 200 150 100 50 0 100 2 MHz 200 kHz 100 kHz 50 kHz 10 kHz VIH 1 MHz VIL 6 8 10 12 14 16 18 1,000 10,000 100,000 Supply Voltage (V) Capacitive Load (pF) FIGURE 2-13: Voltage. 4.0 3.5 3.0 ROUT-HI (Ω) 2.5 2.0 1.5 1.0 0.5 0.0 4 6 8 Input Threshold vs. Supply FIGURE 2-16: Supply Current vs. Capacitive Load (VDD = 18V). 300 Supply Current (mA) VDD = 12 V VIN = 5V (TC4452) VIN = 0V (TC4451) 1 MHz 200 kHz 250 200 150 100 50 0 100 2 MHz 10 kHz TJ = 125oC 100 kHz 50 kHz TJ = 25 C o 10 12 14 16 18 1,000 10,000 100,000 Supply Voltage (V) Capacitive Load (pF) FIGURE 2-14: High-State Output Resistance vs. Supply Voltage. 3.0 2.5 FIGURE 2-17: Supply Current vs. Capacitive Load (VDD = 12V). 175 Supply Current (mA) VDD = 6 V VIN = 0V (TC4452) VIN = 5V (TC4451) 155 135 115 95 75 55 35 15 2 MHz 1 MHz ROUT-LO (Ω) 2.0 1.5 1.0 0.5 0.0 4 6 8 10 12 14 16 18 TJ = 2 5 C o 200 kHz 100 kHz 50 kHz 10 kHz TJ = 125 C o -5 100 1,000 10,000 100,000 Supply Voltage (V) Capacitive Load (pF) FIGURE 2-15: Low-State Output Resistance vs. Supply Voltage. FIGURE 2-18: Supply Current vs. Capacitive Load (VDD = 6V). © 2006 Microchip Technology Inc. DS21987A-page 7 TC4451/TC4452 Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V. 250 Supply Current (mA) 200 22,000 pF VDD = 18 V 250 15,000 pF VDD = 6 V 15,000 pF 22,000 pF 10,000 pF 47,000 pF 0.1 μF 1,000 pF 470 pF Supply Current (mA) 10,000 pF 1,000 pF 200 150 100 50 0 150 100 50 0 47,000 pF 0.1 μF 470 pF 10 100 1000 10000 10 100 1000 10000 Frequency (kHz) Frequency (kHz) FIGURE 2-19: Supply Current vs. Frequency (VDD = 18V). 250 Supply Current (mA) FIGURE 2-21: Supply Current vs. Frequency (VDD = 6V). VDD = 12 V 15,000 pF 200 150 100 50 0 10 100 1000 22,000 pF 47,000 pF 0.1 μF 10,000 pF 1,000 pF 470 pF 10000 Frequency (kHz) FIGURE 2-20: Supply Current vs. Frequency (VDD = 12V). DS21987A-page 8 © 2006 Microchip Technology Inc. TC4451/TC4452 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: Pin No. 8-Pin PDIP, SOIC PIN FUNCTION TABLE Pin No. 8-Pin DFN Pin No. 5-Pin TO-220 Symbol Description 1 2 3 4 5 6 7 8 — — 1 2 3 4 5 6 7 8 PAD — — 1 — 2 4 5 — 3 — TAB VDD INPUT NC GND GND OUTPUT OUTPUT VDD NC VDD Supply input, 4.5V to 18V Control input, TTL/CMOS-compatible input No connection Ground Ground CMOS push-pull output CMOS push-pull output Supply input, 4.5V to 18V Exposed metal pad Metal tab is at the VDD potential 3.1 Supply Input (VDD) 3.4 Ground The VDD input is the bias supply for the MOSFET driver and is rated for 4.5V to 18V with respect to the ground pin. The VDD input should be bypassed to ground with a local ceramic capacitor. The value of the capacitor should be chosen based on the capacitive load that is being driven. A minimum value of 1.0 μF is suggested. The ground pins are the return path for the bias current and for the high peak currents that discharge the load capacitor. The ground pins should be tied into a ground plane or have very short traces to the bias supply source return. 3.2 Control Input 3.5 Exposed Metal Pad The MOSFET driver input is a high-impedance, TTL/CMOS-compatible input. The input also has 300 mV of hysteresis between the high and low thresholds that prevents output glitching even when the rise and fall time of the input signal is very slow. The exposed metal pad of the 6x5 DFN package is not internally connected to any potential. Therefore, this pad can be connected to a ground plane or other copper plane on a Printed Circuit Board (PCB) to aid in heat removal from the package. 3.3 CMOS Push-Pull Output 3.6 Metal Tab The MOSFET driver output is a low-impedance, CMOS, push-pull style output capable of driving a capacitive load with 12A peak currents. The MOSFET driver output is capable of withstanding 1.5A peak reverse currents of either polarity. The metal tab of the TO-220 package is connected to the VDD potential of the device. This connection to VDD can be used as a current carrying path for the device. © 2006 Microchip Technology Inc. DS21987A-page 9 TC4451/TC4452 4.0 APPLICATIONS INFORMATION +5V Input VDD = 18V 0.1 μF 1 8 VDD VDD Input 2 Input Output 6 Output 7 GND 4 GND 5 Output CL = 15,000 pF +5V Input 0V +18V Input: 100 kHz, square wave, tRISE = tFALL ≤ 10 ns Output 0V 10% Non-Inverting Driver Note: Pinout shown is for the DFN, PDIP and SOIC packages. 10% tD1 90% tD2 90% tF 10% 0V 0.1 μF 4.7 μF +18V Output 0V 10% Inverting Driver 10% 10% tD1 90% tD2 90% tF tR 90% TC4451 90% tR TC4452 FIGURE 4-1: Switching Time Test Circuits. DS21987A-page 10 © 2006 Microchip Technology Inc. TC4451/TC4452 5.0 5.1 PACKAGING INFORMATION Package Marking Information 5-Lead TO-220 Example: XXXXXXXXX XXXXXXXXX YYWWNNN TC4451 XXXXXXXXX e3 VAT^^ 0649256 8-Lead DFN-S XXXXXXX XXXXXXX XXYYWW NNN Example: TC4451 VMF^ 3 e 0649 256 8-Lead PDIP (300 mil) XXXXXXXX XXXXXNNN YYWW Example: TC4451V e3 PA^^ 256 0649 8-Lead SOIC (150 mil) XXXXXXXX XXXXYYWW NNN Example: TC4451V OA e3 0649 ^^ 256 Legend: XX...X Y YY WW NNN e3 * Note: Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. © 2006 Microchip Technology Inc. DS21987A-page 11 TC4451/TC4452 5-Lead Plastic Transistor Outline (AT) (TO-220) L H1 Q β e1 e e3 E EJECTOR PIN α (5°) C1 J1 ØP A F D Units Dimension Limits Lead Pitch Overall Lead Centers Space Between Leads Overall Height Overall Width Overall Length Flag Length Flag Thickness Through Hole Center Through Hole Diameter Lead Length Base to Bottom of Lead Lead Thickness Lead Width Mold Draft Angle e e1 e3 A E D H1 F Q P L J1 C1 β α INCHES* MIN .060 .263 .030 .160 .385 .560 .234 .045 .103 .146 .540 .090 .014 .025 3° MAX .072 .273 .040 .190 .415 .590 .258 .055 .113 .156 .560 .115 .022 .040 7° MILLIMETERS MIN 1.52 6.68 0.76 4.06 9.78 14.22 5.94 1.14 2.62 3.71 13.72 2.29 0.36 0.64 3° MAX 1.83 6.93 1.02 4.83 10.54 14.99 6.55 1.40 2.87 3.96 14.22 2.92 0.56 1.02 7° * Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254 mm) per side. JEDEC equivalent: TO-220 Drawing No. C04-036 Revised 08-01-05 DS21987A-page 12 © 2006 Microchip Technology Inc. TC4451/TC4452 8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated © 2006 Microchip Technology Inc. DS21987A-page 13 TC4451/TC4452 8-Lead Plastic Dual In-line (PA) – 300 mil (PDIP) E1 D 2 n 1 α E A A2 c L A1 β eB B1 p B Number of Pins Pitch Top to Seating Plane Molded Package Thickness Base to Seating Plane Shoulder to Shoulder Width Molded Package Width Overall Length Tip to Seating Plane Lead Thickness Upper Lead Width Lower Lead Width Overall Row Spacing Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic Units Dimension Limits n p A A2 A1 E E1 D L c B1 B eB α β MIN INCHES* NOM 8 .100 .155 .130 .313 .250 .373 .130 .012 .058 .018 .370 10 10 MAX MIN § .140 .115 .015 .300 .240 .360 .125 .008 .045 .014 .310 5 5 .170 .145 .325 .260 .385 .135 .015 .070 .022 .430 15 15 MILLIMETERS NOM 8 2.54 3.56 3.94 2.92 3.30 0.38 7.62 7.94 6.10 6.35 9.14 9.46 3.18 3.30 0.20 0.29 1.14 1.46 0.36 0.46 7.87 9.40 5 10 5 10 MAX 4.32 3.68 8.26 6.60 9.78 3.43 0.38 1.78 0.56 10.92 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-018 DS21987A-page 14 © 2006 Microchip Technology Inc. TC4451/TC4452 8-Lead Plastic Small Outline (OA) – Narrow, 150 mil (SOIC) E E1 p D 2 B n 1 45° h α c A A2 φ β L A1 Number of Pins Pitch Overall Height Molded Package Thickness Standoff § Overall Width Molded Package Width Overall Length Chamfer Distance Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic Units Dimension Limits n p A A2 A1 E E1 D h L φ c B α β MIN .053 .052 .004 .228 .146 .189 .010 .019 0 .008 .013 0 0 INCHES* NOM 8 .050 .061 .056 .007 .237 .154 .193 .015 .025 4 .009 .017 12 12 MAX MIN .069 .061 .010 .244 .157 .197 .020 .030 8 .010 .020 15 15 MILLIMETERS NOM 8 1.27 1.35 1.55 1.32 1.42 0.10 0.18 5.79 6.02 3.71 3.91 4.80 4.90 0.25 0.38 0.48 0.62 0 4 0.20 0.23 0.33 0.42 0 12 0 12 MAX 1.75 1.55 0.25 6.20 3.99 5.00 0.51 0.76 8 0.25 0.51 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-057 © 2006 Microchip Technology Inc. DS21987A-page 15 TC4451/TC4452 NOTES: DS21987A-page 16 © 2006 Microchip Technology Inc. TC4451/TC4452 APPENDIX A: REVISION HISTORY Revision A (February 2006) • Original Release of this Document. © 2006 Microchip Technology Inc. DS21987A-page 17 TC4451/TC4452 NOTES: DS21987A-page 18 © 2006 Microchip Technology Inc. TC4451/TC4452 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device X Temperature Range XX Package XXX Tape & Reel Examples: a) TC4451VAT: 12A High-Speed Inverting MOSFET Driver, TO-220 package 12A High-Speed Inverting MOSFET Driver, SOIC package 12A High-Speed Inverting MOSFET Driver, DFN package 12A High-Speed Non-Inverting MOSFET Driver, PDIP package 12A High-Speed Non-Inverting MOSFET Driver, SOIC package 12A High-Speed Non-Inverting MOSFET Driver, DFN package b) Device: TC4451: TC4452: V 12A High-Speed MOSFET Driver, Inverting 12A High-Speed MOSFET Driver, Non-Inverting TC4451VOA: c) TC4451VMF: Temperature Range: Package: * = -40°C to +125°C AT = TO-220, 5-lead MF = Dual, Flat, No-Lead (6x5 mm Body), 8-lead MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead (Tape and Reel) PA = Plastic DIP (300 mil Body), 8-lead OA = Plastic SOIC (150 mil Body), 8-lead OA713 = Plastic SOIC (150 mil Body), 8-lead (Tape and Reel) *All package offerings are Pb Free (Lead Free). a) TC4452VPA: b) TC4452VOA: c) TC4452VMF: © 2006 Microchip Technology Inc. DS21987A-page 19 TC4451/TC4452 NOTES: DS21987A-page 20 © 2006 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • • • Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” • • Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Linear Active Thermistor, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, Real ICE, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance, UNI/O, WiperLock and Zena are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2006, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company’s quality system processes and procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. © 2006 Microchip Technology Inc. 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