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TC4626CPA

TC4626CPA

  • 厂商:

    MICROCHIP

  • 封装:

  • 描述:

    TC4626CPA - Power CMOS Drivers With Voltage Tripler - Microchip Technology

  • 详情介绍
  • 数据手册
  • 价格&库存
TC4626CPA 数据手册
TC4626/TC4627 Power CMOS Drivers With Voltage Tripler Features • • • • • • Power Driver With On Board Voltage Booster Low IDD – 8.5V, Figure 3-1 Peak Output Current — 1.5 13 15 — A 20 25 Ω — — — 0.025 V V Ω IOUT = 10mA, VDD = 5V C & E Version (TA = 70°C or 85°C) M Version (TA = 125°C) IOUT = 10mA, VDD = 5V C & E Version (TA = 70°C or 85°C) M Version (TA = 125°C) Logic 1, High Input Voltage Logic 0, Low Input Voltage Input Current 2.4 — -10 — — — — 0.8 1 V V µA 0V ≤ VIN ≤ VBOOST Power Supply Current Supply Voltage — 4.0 — — 2.5 6.0 mA V VIN = LOW or HIGH Parameter Min Typ Max Units Test Conditions Electrical Characteristics: Over operating temperature range, VDD = 5V, C1 = C2 = C3 10µF unless otherwise noted. Parameter Min Typ Max Units Test Conditions 2002 Microchip Technology Inc. DS21426B-page 3 © TC4626/TC4627 2.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 2-1. TABLE 2-1: Pin No. (8-Pin PDIP, CERDIP) 1 2 3 4 5 6 7 8 PIN FUNCTION TABLE Symbol C1C1+ C2 GND OUT VBOOST IN VDD Ground. Description Pin No. (16-Pin SOIC Wide) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Symbol C1NC C1+ NC C2 NC NC GND OUT NC VBOOST NC IN NC NC VDD No connect. No connect. No connect. No connect. No connect. No connect. Ground. No connect. No connect. Description © DS21426B-page 4 2002 Microchip Technology Inc. TC4626/TC4627 3.0 APPLICATIONS INFORMATION INVERTING DRIVER SWITCHING TIME VBOOST FIGURE 3-1: FIGURE 3-2: NONINVERTING DRIVER SWITCHING TIME VBOOST C3 10µF 6 Input C1 10µF 1 3 C2 10µF 7 2 C1+ C15 0.1µF Ceramic C3 10µF 6 7 2 C1 10µF 1 C1+ C15 0.1µF Ceramic Output CL = 1000pF Input Output CL = 1000pF C2 TC4626 4 8 VDD = 5V 3 C2 10µF C2 TC4627 4 8 VDD = 5V +5V Input 0V VBOOST Output 0V Input: 100kHz, square wave, tRISE = tFALL ≤ 10nsec 10% 10% tD1 tF 90% 90% +5V Input 90% tD2 0V tR 90% 10% 90% 90% VBOOST tD1 Output tD2 tR tF 10% 10% 0V 10% Input: 100kHz, square wave, tRISE = tFALL ≤ 10nsec 2002 Microchip Technology Inc. DS21426B-page 5 © TC4626/TC4627 3.1 BOOSTER FUNCTION The voltage booster is an unregulated voltage tripler circuit. The tripler consists of three sets of internal switches and three external capacitors. S1a and S1b charge capacitor C1 to V DD potential. S2a and S2b add C1 potential to VDD input to charge C2 to 2 x VDD. S3a and S3b add C1 potential to C2 to charge C3 to 3 x VDD. The position of the switches is controlled by the internal 4 phase clock. FIGURE 3-3: VOLTAGE BOOSTER 6 + C3 S3a 3 + C2 S2a 2 x VDD S3b 3 x VDD, VBOOST 6 (4 to 6V) VDD 8 S1a 2 S2b + C1 1 S1b GND 4 FIGURE 3-4: POSITION OF SWITCHES Pin 1 & 2 Waveforms 3 x VDD Pin 2 Voltage 2 x VDD VDD 2 x VDD Pin 1 Voltage VDD 0 On S1 Off S2 On Off S3 On Off © DS21426B-page 6 2002 Microchip Technology Inc. TC4626/TC4627 4.0 Note: TYPICAL CHARACTERISTICS The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. TC4626 VOH vs. Frequency 16 14 12 10 2200pF 8 6 4 2 0 1000pF 470pF VS = 5V TA = -55°C TC4626 VOH vs. Frequency 14 12 470pF VS = 5V TA = 25°C VOUT HI (Volts) VOUT HI (Volts) 10 8 6 2200pF 4 2 0 1000pF 5 500 1,000 1,500 2,000 2,500 3,000 3,500 FREQUENCY (kHz) 10 500 1,000 1,500 2,000 2,500 3,000 3,500 FREQUENCY (kHz) TC4626 VOH vs. Frequency 14 12 VS = 5V TA = 125°C 100 Delay Time vs. Temperature Input = 0-5V; TR & TF
TC4626CPA
1. 物料型号: - TC4626COE:16-Pin SOIC (Wide) 封装,工作温度范围 -55°C 至 +125°C。 - TC4626CPA:8-Pin PDIP 封装,工作温度范围 -40°C 至 +85°C。 - TC4626EOE:16-Pin SOIC (Wide) 封装,工作温度范围 -40°C 至 +85°C。 - TC4626EPA:8-Pin PDIP 封装,工作温度范围 0°C 至 +70°C。 - TC4626MJA:8-Pin CERDIP 封装,工作温度范围 0°C 至 +70°C。 - TC4627COE:16-Pin SOIC (Wide) 封装,工作温度范围 -55°C 至 +125°C。 - TC4627CPA:8-Pin PDIP 封装,工作温度范围 -40°C 至 +85°C。 - TC4627EOE:16-Pin SOIC (Wide) 封装,工作温度范围 -40°C 至 +85°C。 - TC4627EPA:8-Pin PDIP 封装,工作温度范围 0°C 至 +70°C。 - TC4627MJA:8-Pin CERDIP 封装,工作温度范围 0°C 至 +70°C。

2. 器件简介: - TC4626/TC4627是带有电压倍增器的单通道CMOS高速驱动器。这些器件工作在4至6伏的输入供电电压下,内部电压倍增器可以产生比输入电压高12伏的$V_{BOOST}$。这个$V_{BOOST}$没有调节,因此其电压取决于输入$V_{DD}$电压和输出驱动负载要求。内部欠压锁定电路在$V_{BOOST}$低于7.8伏时保持输出低电平。当$V_{BOOST}$高于11.3伏时,输出被启用。

3. 引脚分配: - 8-Pin PDIP/CERDIP2封装: - 1: C1- - 2: C1+ - 3: C2 - 4: GND(地) - 5: OUT(输出) - 6: VBOOST - 7: IN(输入) - 8: VDD(供电) - 16-Pin SOIC (Wide)封装: - 1: C1- - 2: NC(无连接) - 3: C1+ - 4: NC(无连接) - 5: C2 - 6: NC(无连接) - 7: NC(无连接) - 8: GND(地) - 9: OUT(输出) - 10: NC(无连接) - 11: VBOOST - 12: NC(无连接) - 13: IN(输入) - 14: NC(无连接) - 15: NC(无连接) - 16: VDD(供电)

4. 参数特性: - 低功耗:小于4mA - 小型封装:8-Pin PDIP - 欠压电路 - 快速上升/下降时间:小于40纳秒@1000pF - 下限轨输入保护

5. 功能详解: - TC4626/TC4627内部包含一个非调节的电压三倍电路,由三组内部开关和三个外部电容器组成。S1a和S1b充电电容器C1到VDD电位,S2a和S2b将C1电位加到VDD输入充电C2到2×VDD,S3a和S3b将C1电位加到C2充电C3到3×VDD。开关的位置由内部4相时钟控制。

6. 应用信息: - 将5V升至驱动更高Vgs(ON)的MOSFET - 消除一个系统电源供应

7. 封装信息: - 提供了8-Pin Plastic DIP、8-Pin CDIP (Narrow)和16-Pin SOIC (Wide)封装的尺寸信息。
TC4626CPA 价格&库存

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