M25PE20, M25PE10 Serial Flash Embedded Memory
Features
M25PE20/M25PE10 2Mb and 1Mb
3V NOR Serial Flash Memory
Serial Flash Memory with Byte Alterability, 75 MHz SPI bus, Standard
Pinout
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
1Mb or 2Mb of page-erasable Flash memory
2.7V to 3.6V single supply voltage
SPI bus compatible serial interface
75 MHz clock rate (maximum)
Page size: 256 bytes
– Page write in 11ms (TYP)
– Page program in 0.8ms (TYP)
– Page erase in 10ms (TYP)
Subsector erase: 32Kb
– Sector erase: 512Kb
– Bulk erase: 1Mb for M25PE10; 2Mb for M25PE20
Deep power-down mode: 1µA (TYP)
Electronic signature
– JEDEC standard 2-byte signature (8012h for
M25PE20; 8011h for M25PE10)
Software write-protection on a 64KB sector basis
More than 100,000 write cycles per sector
More than 20 years of data retention
Hardware write protection of the memory area selected using the BP0 and BP1 bits
Packages (RoHS compliant)
– SO8N (MN) 150 mil width
– VFQFPN8 (MP) 6mm x 5mm
Automotive grade parts available
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Products and specifications discussed herein are subject to change by Micron without notice.
M25PE20, M25PE10 Serial Flash Embedded Memory
Features
Contents
Functional Description ..................................................................................................................................... 5
Signal Descriptions ........................................................................................................................................... 7
Serial Peripheral Interface Modes ...................................................................................................................... 8
Operating Features ......................................................................................................................................... 10
Sharing the overhead of modifying data ...................................................................................................... 10
An easy way to modify data ......................................................................................................................... 10
A fast way to modify data ............................................................................................................................ 10
Polling during a Write, Program, or Erase Cycle ............................................................................................ 11
Reset .......................................................................................................................................................... 11
Active Power, Standby Power, and Deep Power-Down .................................................................................. 11
Status Register ............................................................................................................................................ 11
Protection Modes ....................................................................................................................................... 11
Specific Hardware and Software Protection ................................................................................................. 12
Memory Organization .................................................................................................................................... 14
M25PE20 .................................................................................................................................................... 14
M25PE10 .................................................................................................................................................... 16
Command Set Overview ................................................................................................................................. 18
WRITE ENABLE .............................................................................................................................................. 20
WRITE DISABLE ............................................................................................................................................. 21
READ IDENTIFICATION ................................................................................................................................. 22
READ STATUS REGISTER ................................................................................................................................ 23
WIP Bit ...................................................................................................................................................... 23
WEL Bit ...................................................................................................................................................... 23
Block Protect Bits ....................................................................................................................................... 24
SRWD Bit ................................................................................................................................................... 24
WRITE STATUS REGISTER .............................................................................................................................. 25
READ DATA BYTES ......................................................................................................................................... 27
READ DATA BYTES at HIGHER SPEED ............................................................................................................ 28
READ LOCK REGISTER ................................................................................................................................... 29
PAGE WRITE .................................................................................................................................................. 30
PAGE PROGRAM ............................................................................................................................................ 32
WRITE to LOCK REGISTER ............................................................................................................................. 34
PAGE ERASE ................................................................................................................................................... 35
SUBSECTOR ERASE ....................................................................................................................................... 36
SECTOR ERASE .............................................................................................................................................. 37
BULK ERASE .................................................................................................................................................. 38
DEEP POWER-DOWN ..................................................................................................................................... 39
RELEASE from DEEP POWER-DOWN .............................................................................................................. 40
Power-Up and Power-Down ............................................................................................................................ 41
RESET ............................................................................................................................................................ 43
Initial Delivery State ....................................................................................................................................... 43
Maximum Ratings and Operating Conditions .................................................................................................. 44
DC Parameters ............................................................................................................................................... 45
AC Characteristics .......................................................................................................................................... 46
Package Dimensions ....................................................................................................................................... 52
Device Ordering Information .......................................................................................................................... 54
Revision History ............................................................................................................................................. 55
Rev. C – 3/2013 ........................................................................................................................................... 55
Rev. B – 10/2012 ......................................................................................................................................... 55
Rev. A – 09/2012 .......................................................................................................................................... 55
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M25PE20, M25PE10 Serial Flash Embedded Memory
Features
List of Figures
Figure 1: Logic Diagram ................................................................................................................................... 5
Figure 2: Pin Connections: VFQFPN and SO ..................................................................................................... 6
Figure 3: Bus Master and Memory Devices on the SPI Bus ................................................................................. 9
Figure 4: SPI Modes ......................................................................................................................................... 9
Figure 5: M25PE20 Block Diagram ................................................................................................................. 15
Figure 6: M25PE10 Block Diagram ................................................................................................................. 17
Figure 7: WRITE ENABLE Command Sequence .............................................................................................. 20
Figure 8: WRITE DISABLE Command Sequence ............................................................................................. 21
Figure 9: READ IDENTIFICATION Command Sequence ................................................................................. 23
Figure 10: READ STATUS REGISTER Command Sequence .............................................................................. 23
Figure 11: Status Register Format ................................................................................................................... 24
Figure 12: WRITE STATUS REGISTER Command Sequence ............................................................................. 25
Figure 13: READ DATA BYTES Command Sequence ........................................................................................ 27
Figure 14: READ DATA BYTES at HIGHER SPEED Command Sequence ........................................................... 28
Figure 15: READ LOCK REGISTER Command Sequence ................................................................................. 29
Figure 16: PAGE WRITE Command Sequence ................................................................................................. 31
Figure 17: PAGE PROGRAM Command Sequence ........................................................................................... 33
Figure 18: WRITE to LOCK REGISTER Instruction Sequence ........................................................................... 34
Figure 19: PAGE ERASE Command Sequence ................................................................................................. 35
Figure 20: SUBSECTOR ERASE Command Sequence ...................................................................................... 36
Figure 21: SECTOR ERASE Command Sequence ............................................................................................. 37
Figure 22: BULK ERASE Command Sequence ................................................................................................. 38
Figure 23: DEEP POWER-DOWN Command Sequence ................................................................................... 39
Figure 24: RELEASE from DEEP POWER-DOWN Command Sequence ............................................................. 40
Figure 25: Power-Up Timing .......................................................................................................................... 42
Figure 26: AC Measurement I/O Waveform ..................................................................................................... 46
Figure 27: Serial Input Timing ........................................................................................................................ 49
Figure 28: Write Protect Setup and Hold Timing ............................................................................................. 49
Figure 29: Output Timing .............................................................................................................................. 50
Figure 30: Reset AC Waveform ....................................................................................................................... 51
Figure 31: SO8N 150mils Body Width ............................................................................................................. 52
Figure 32: VFQFPN8 (MLP8) 6mm x 5mm ...................................................................................................... 53
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M25PE20, M25PE10 Serial Flash Embedded Memory
Features
List of Tables
Table 1: Signal Names ...................................................................................................................................... 6
Table 2: Signal Descriptions ............................................................................................................................. 7
Table 3: SPI Modes .......................................................................................................................................... 8
Table 4: Software Protection Truth Table, 64KB granularity (sectors 0-3 for M25PE20; sectors 0-1 for M25PE10) ...13
Table 5: Protected Area Sizes — M25PE20 ....................................................................................................... 13
Table 6: Protected Area Sizes — M25PE10 ....................................................................................................... 13
Table 7: M25PE20 Memory Organization ........................................................................................................ 14
Table 8: M25PE10 Memory Organization ........................................................................................................ 16
Table 9: Command Set Codes ........................................................................................................................ 19
Table 10: READ IDENTIFICATION Data Out Sequence .................................................................................... 22
Table 11: Status Register Protection Modes ..................................................................................................... 26
Table 12: Lock Register Out ............................................................................................................................ 29
Table 13: Lock Register In .............................................................................................................................. 34
Table 14: Power-up Timing and V WI Threshold ............................................................................................... 42
Table 15: Device Status After a RESET# LOW Pulse .......................................................................................... 43
Table 16: Absolute Maximum Ratings ............................................................................................................. 44
Table 17: Operating Conditions ...................................................................................................................... 44
Table 18: DC Characteristics .......................................................................................................................... 45
Table 19: AC Measurement Conditions ........................................................................................................... 46
Table 20: Capacitance .................................................................................................................................... 46
Table 21: AC Specifications (50 MHz operation) .............................................................................................. 47
Table 22: AC Specifications (75MHz operation) ............................................................................................... 48
Table 23: Reset Conditions ............................................................................................................................. 50
Table 24: Timings After a RESET# LOW Pulse .................................................................................................. 50
Table 25: Standard Part Number Information Scheme ..................................................................................... 54
Table 26: Automotive Part Number Information Scheme ................................................................................. 54
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M25PE20, M25PE10 Serial Flash Embedded Memory
Functional Description
Functional Description
The M25PE20 and M25PE10 are 2Mb (256Kb x 8 bit) and 1Mb (128Kb x 8 bit) serial-paged Flash memory devices, respectively, accessed by a high-speed SPI-compatible bus.
The memories can be written or programmed 1 to 256 bytes at a time using the PAGE
WRITE or PAGE PROGRAM command. The PAGE WRITE command consists of an integrated PAGE ERASE cycle followed by a PAGE PROGRAM cycle.
The M25PE20 memory is organized as 4 sectors, each containing 256 pages. Each page
is 256 bytes wide. The entire memory can be viewed as consisting of 1024 pages, or
262,144 bytes.
The M25PE10 memory is organized as 2 sectors, each containing 256 pages. Each page
is 256 bytes wide. The entire memory can be viewed as consisting of 512 pages, or
131,072 bytes.
The memories can be erased one page at a time using the PAGE ERASE command, one
sector at a time using the SECTOR ERASE command, one subsector at a time using the
SUBSECTOR ERASE command, or as a whoe using the BULK ERASE command.
The memories can be write-protected by either hardware or software using a mix of volatile and non-volatile protection features, depending on application needs. The protection granularity is 64KB (sector granularity). The entire memory array is partitioned into
4KB subsectors.
Figure 1: Logic Diagram
VCC
DQ0
DQ1
C
S#
W#
RESET#
VSS
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M25PE20, M25PE10 Serial Flash Embedded Memory
Functional Description
Table 1: Signal Names
Signal Name
Function
Direction
C
Serial clock
Input
DQ0
Serial data input
Input
DQ1
Serial data output
Output
S#
Chip select
Input
W#
Write Protect
Input
RESET#
Reset
Input
VCC
Supply voltage
–
VSS
Ground
–
Figure 2: Pin Connections: VFQFPN and SO
S#
1
8
VCC
DQ1
2
7
RESET#
TSL#/W#
3
6
C
VSS
4
5
DQ0
There is an exposed central pad on the underside of the VFQFPN package that is pulled
internally to V SS and must not be connected to any other voltage or signal line on the
PCB. The Package Mechanical section provides information on package dimensions
and how to identify pin 1.
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M25PE20, M25PE10 Serial Flash Embedded Memory
Signal Descriptions
Signal Descriptions
Table 2: Signal Descriptions
Signal
Type
DQ1
Output
Serial data: The DQ1 output signal is used to transfer data serially out of the device.
Data is shifted out on the falling edge of the serial clock (C).
DQ0
Input
Serial data: The DQ0 input signal is used to transfer data serially into the device. It
receives commands, addresses, and the data to be programmed. Values are latched on
the rising edge of the serial clock (C).
C
Input
Clock: The C input signal provides the timing of the serial interface. Commands, addresses, or data present at serial data input (DQ0) is latched on the rising edge of the
serial clock (C). Data on DQ1 changes after the falling edge of C.
S#
Input
Chip select: When the S# input signal is HIGH, the device is deselected and DQ1 is at
HIGH impedance. Unless an internal READ, PROGRAM, ERASE, or WRITE cycle is in progress, the device will be in the standby power mode (not the DEEP POWER-DOWN
mode). Driving S# LOW enables the device, placing it in the active power mode. After
power-up, a falling edge on S# is required prior to the start of any command.
RESET#
Input
Reset: The RESET# input provides a hardware reset for the memory.
When RESET# is driven HIGH, the memory is in the normal operating mode. When RESET# is driven LOW, the memory will enter the Reset mode. In this mode, the output is
at HIGH impedance.
Driving RESET# LOW while an internal operation is in progress affects the WRITE, PROGRAM, or ERASE cycle, and data may be lost.
W#
Input
Write protect: The W# input signal is used to freeze the size of the area of memory
that is protected against WRITE, PROGRAM, and ERASE instructions as specified by the
values in the BP1 and BP0 bits of the Status Register.
VCC
Input
Supply voltage
VSS
Input
Ground: Reference for the VCC supply voltage.
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Description
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M25PE20, M25PE10 Serial Flash Embedded Memory
Serial Peripheral Interface Modes
Serial Peripheral Interface Modes
The device can be driven by a microcontroller while its serial peripheral interface (SPI)
is in either of the two modes shown here. The difference between the two modes is the
clock polarity when the bus master is in standby mode and not transferring data. Input
data is latched in on the rising edge of the clock, and output data is available from the
falling edge of the clock.
Table 3: SPI Modes
SPI Modes
Clock Polarity
CPOL = 0, CPHA = 0
C remains at 0 for (CPOL = 0, CPHA = 0)
CPOL = 1, CPHA = 1
C remains at 1 for (CPOL = 1, CPHA = 1)
The following figure is an example of three memory devices in a simple connection to
an MCU on an SPI bus. Because only one device is selected at a time, that one device
drives DQ1, while the other devices are HIGH-Z.
Resistors ensure the device is not selected if the bus master leaves S# HIGH-Z. The bus
master might enter a state in which all input/output is HIGH-Z simultaneously, such as
when the bus master is reset. Therefore, the serial clock must be connected to an external pull-down resistor so that S# is pulled HIGH while the serial clock is pulled LOW.
This ensures that S# and the serial clock are not HIGH simultaneously and that tSHCH
is met. The typical resistor value of 100kΩ, assuming that the time constant R × Cp (Cp =
parasitic capacitance of the bus line), is shorter than the time the bus master leaves the
SPI bus in HIGH-Z.
Example: Cp = 50 pF, that is R × Cp = 5μs. The application must ensure that the bus
master never leaves the SPI bus HIGH-Z for a time period shorter than 5μs. W# and
HOLD# should be driven either HIGH or LOW, as appropriate.
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M25PE20, M25PE10 Serial Flash Embedded Memory
Serial Peripheral Interface Modes
Figure 3: Bus Master and Memory Devices on the SPI Bus
VSS
VCC
R
SDO
SPI interface:
(CPOL, CPHA) =
(0, 0) or (1, 1)
SDI
SCK
VCC
C
SPI bus master
DQ1 DQ0
R
CS3
SPI memory
device
VCC
C
VSS
R
DQ1
DQ0
SPI memory
device
VCC
C
VSS
R
DQ1 DQ0
VSS
SPI memory
device
CS2 CS1
S#
W# HOLD#
S#
W# HOLD#
S#
W# HOLD#
Figure 4: SPI Modes
CPOL CPHA
0
0
C
1
1
C
DQ0
MSB
DQ1
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M25PE20, M25PE10 Serial Flash Embedded Memory
Operating Features
Operating Features
Sharing the overhead of modifying data
To write or program one or more data bytes, two commands are required: WRITE ENABLE (WREN), which is one byte, and a PAGE WRITE (PW) or PAGE PROGRAM (PP) sequence, which consists of four bytes plus data. This is followed by the internal cycle of
duration tPW or tPP.
To share this overhead, the PW or PP command allows up to 256 bytes to be programmed (changing bits from 1 to 0) or written (changing bits to 0 or 1) at a time, provided
that they lie in consecutive addresses on the same page of memory.
An easy way to modify data
The Page Write (PW) instruction provides a convenient way of modifying data (up to
256 contiguous bytes at a time), and simply requires the start address, and the new data
in the instruction sequence.
The Page Write (PW) instruction is entered by driving Chip Select (S#) LOW, and then
transmitting the instruction byte, three address bytes (A23-A0) and at least one data
byte, and then driving S# HIGH. While S# is being held LOW, the data bytes are written
to the data buffer, starting at the address given in the third address byte (A7-A0). When
Chip S# is driven HIGH, the Write cycle starts. The remaining unchanged bytes of the
data buffer are automatically loaded with the values of the corresponding bytes of the
addressed memory page. The addressed memory page is then automatically put into an
Erase cycle. Finally, the addressed memory page is programmed with the contents of
the data buffer.
All of this buffer management is handled internally, and is transparent to the user. The
user is given the facility of being able to alter the contents of the memory on a byte-bybyte basis. For optimized timings, it is recommended to use the PAGE WRITE (PW) instruction to write all consecutive targeted bytes in a single sequence versus using several PAGE WRITE (PW) sequences with each containing only a few bytes.
A fast way to modify data
The PAGE PROGRAM (PP) command providesa fast way of modifying data (up to 256
contiguous bytes at a time), provided that it only involves resetting bits to 0 that had
previously been set to 1.
This might be:
• When the designer is programming the device for the first time.
• When the designer knows that the page has already been erased by an earlier PAGE
ERASE (PE), SUBSECTOR ERASE (SSE), SECTOR ERASE (SE), or BULK ERASE (BE)
command. This is useful, for example, when storing a fast stream of data, having first
performed the erase cycle when time was available.
• When the designer knows that the only changes involve resetting bits to 0 that are still
set to 1. When this method is possible, it has the additional advantage of minimizing
the number of unnecessary erase operations, and the extra stress incurred by each
page.
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M25PE20, M25PE10 Serial Flash Embedded Memory
Operating Features
For optimized timings, it is recommended to use the PAGE PROGRAM (PP) instruction
to program all consecutive targeted bytes in a single sequence versus using several
PAGE PROGRAM (PP) sequences with each containing only a few bytes.
Polling during a Write, Program, or Erase Cycle
An improvement in the time to complete the following commands can be achieved by
not waiting for the worst case delay (tPW, tPP, tPE, tBE, tWor tSE).
The write in progress (WIP) bit is provided in the status register so that the application
program can monitor this bit in the status register, polling it to establish when the previous WRITE cycle, PROGRAM cycle, or ERASE cycle is complete.
Reset
An internal power-on reset circuit helps protect against inadvertent data writes. Additional protection is provided by driving RESET# LOW during the power-on process, and
only driving it HIGH when V CC has reached the correct voltage level, V CC(min).
Active Power, Standby Power, and Deep Power-Down
When chip select (S#) is LOW, the device is selected and in the ACTIVE POWER mode.
When S# is HIGH, the device is deselected, but could remain in the ACTIVE POWER
mode until all internal cycles have completed (PROGRAM, ERASE, WRITE). The device
then goes in to the STANDBY POWER mode. The device consumption drops to I CC1.
The DEEP POWER-DOWN mode is entered when the DEEP POWER-DOWN command
is executed. The device consumption drops further to I CC2. The device remains in this
mode until the RELEASE FROM DEEP POWER-DOWN command is executed. While in
the DEEP POWER-DOWN mode, the device ignores all WRITE, PROGRAM, and ERASE
commands. This provides an extra software protection mechanism when the device is
not in active use, by protecting the device from inadvertent WRITE, PROGRAM, or
ERASE operations.
Status Register
The status register contains a number of status bits that can be read by the READ STATUS REGISTER (RDSR) command.
Protection Modes
Non-volatile memory is used in environments that can include excessive noise. The following capabilities help protect data in these noisy environments.
Power on reset and an internal timer (tPUW) can provide protection against inadvertent
changes while the power supply is outside the operating specification.
WRITE, PROGRAM, and ERASE commands are checked before they are accepted for execution to ensure they consist of a number of clock pulses that is a multiple of eight.
All commands that modify data must be preceded by a WRITE ENABLE command to set
the write enable latch (WEL) bit. This bit is returned to its reset state by the following
events.
• Power-up
• Reset (RESET#) driven LOW
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M25PE20, M25PE10 Serial Flash Embedded Memory
Operating Features
•
•
•
•
•
•
•
•
WRITE DISABLE (WRDI) command completion
PAGE WRITE (PW) command completion
PAGE PROGRAM (PP) command completion
WRITE TO LOCK REGISTER (WRLR) command completion
PAGE ERASE (PE) command completion
SUBSECTOR ERASE (SSE) command completion
SECTOR EASE (SE) command completion
BULK ERASE (BE) command completion
The Reset (RESET#) signal can be driven LOW to freeze and reset the internal logic.
In addition to the low power consumption feature, DEEP POWER-DOWN mode offers
extra software protection from inadvertant WRITE, PROGRAM, and ERASE commands
while the device is not in active use.
Specific Hardware and Software Protection
The M25PE10 and M25PE20 devices feature a hardware protected mode (HPM) and two
software protected modes (SPM1 and SPM2). SPM1 and SPM2 can be combined to protect the memory array as required.
Hardware Protected Mode (HPM): The Hardware Protected Mode (HPM) is used to
write-protect the non-volatile bits of the Status Register (that is, the Block Protect Bits
and the Status Register bit). HPM is entered by driving the Write Protect (W#) signal
LOW with the SRWD bit set to HIGH. This additional protection allows the Status Register to be hardware-protected.
SPM1 and SPM2 Modes:
The first Software Protected Mode (SPM1) is managed by specific Lock Registers assigned to each 64KB sector.
The Lock Registers can be read and written using the Read Lock Register (RDLR) and
Write to Lock Register (WRLR) commands.
In each Lock Register, two bits control the protection of each sector: the Write Lock bit
and the Lock Down bit.
• Write lock bit: This bit determines whether the contents of the sector can be modified
using the WRITE, PROGRAM, and ERASE commands. When the bit is set to ‘1’, the
sector is write protected, and any operations that attempt to change the data in the
sector will fail. When the bit is reset to ‘0’, the sector is not write protected by the lock
register, and may be modified.
• Lock down bit: This bit provides a mechanism for protecting software data from simple hacking and malicious attack. When the bit is set to '1’, further modification to the
write lock bit and lock down bit cannot be performed. A power-up, is required before
changes to these bits can be made. When the bit is reset to ‘0’, the write lock bit and
lock down bit can be changed.
The Write Lock bit and the Lock Down bit are volatile and their value is reset to 0 after a
power-down or reset.
The software protection truth table shows the lock down bit and write lock bit settings
and the sector protection status.
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M25PE20, M25PE10 Serial Flash Embedded Memory
Operating Features
Table 4: Software Protection Truth Table, 64KB granularity (sectors 0-3 for M25PE20; sectors 0-1 for
M25PE10)
Sector Lock
Register:
Lock Down Bit
Sector Lock
Register:
Write Lock Bit
0
0
Sector unprotected from PROGRAM / ERASE / WRITE operations; protection status reversible
0
1
Sector protected from PROGRAM / ERASE / WRITE operations; protection status
reversible
1
0
Sector unprotected from PROGRAM / ERASE / WRITE operations; protection status cannot be changed except by a reset or power-up.
1
1
Sector protected from PROGRAM / ERASE / WRITE operations; protection status
cannot be changed except by a reset or power-up.
Protection Status
The second Software Protected Mode (SPM2) uses the block protect (BP1, BP0) bits to
allow part of the memory to be configured as read-only.
Table 5: Protected Area Sizes — M25PE20
Status Register Content
Memory Content
BP Bit 1
BP Bit 0
0
0
none
All sectors (sectors 0 to 3)
0
1
Upper 4th (sector 3)
Lower 3/4ths (sectors 0 to 2)
1
0
Upper half (sectors 2 and 3)
Lower half (sectors 0 to 1)
1
1
All sectors (sectors 0 to 3)
none
Note:
Protected Area
Unprotected Area
Notes
1
1. The device is ready to accept a BULK ERASE command only if all block protect bits (BP1,
BP0) are 0.
Table 6: Protected Area Sizes — M25PE10
Status Register Content
Memory Content
BP Bit 1
BP Bit 0
0
0
none
All sectors (sectors 0 and 1)
0
1
Upper half (sector 1)
Lower half (sector 0)
1
0
Upper half (sector 1)
Lower half (sector 0)
1
1
All sectors (sectors 0 and 1)
none
Note:
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Protected Area
Unprotected Area
Notes
1
1. The device is ready to accept a BULK ERASE command only if all block protect bits (BP1,
BP0) are 0.
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M25PE20, M25PE10 Serial Flash Embedded Memory
Memory Organization
Memory Organization
For both devices, each page can be individually:
• programmed (bits are programmed from 1 to 0)
• erased (bits are erased from 0 to 1)
• written (bits are changed to either 0 or 1)
The device is page- or sector-erasable (bits are erased from 0 to 1).
M25PE20
The M25PE20 memory is organized as follows:
•
•
•
•
1024 pages (256 bytes each)
262,144 bytes (8 bits each)
64 subsectors (32Kb, 4096 bytes each)
4 sectors (512Kb, 65,536 bytes each)
Table 7: M25PE20 Memory Organization
Sector
Subsector
3
63
3F000h
3FFFFh
⋮
⋮
⋮
48
30000h
30FFFh
47
2F000h
2FFFFh
⋮
⋮
⋮
32
20000h
20FFFh
31
1F000h
1FFFFh
2
1
0
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Address Range
⋮
⋮
⋮
16
10000h
10FFFh
15
0F000h
0FFFFh
⋮
⋮
⋮
4
04000h
04FFFh
3
03000h
03FFFh
2
02000h
02FFFh
1
01000h
01FFFh
0
00000h
00FFFh
14
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M25PE20, M25PE10 Serial Flash Embedded Memory
Memory Organization
Figure 5: M25PE20 Block Diagram
RESET#
W#
High Voltage
Generator
Control Logic
S#
C
DQ0
I/O Shift Register
DQ1
Address Register
and Counter
Status
Register
256 Byte
Data Buffer
3FFFFh
3FF00h
Y Decoder
2FFFFh
00000h
000FFh
256 bytes (page size)
X Decoder
Note:
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1. Entire memory array can be made read-only on a 64KB basis through the Lock Registers.
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M25PE20, M25PE10 Serial Flash Embedded Memory
Memory Organization
M25PE10
The M25PE10 memory is organized as follows:
•
•
•
•
512 pages (256 bytes each)
131,074 bytes (8 bits each)
32 subsectors (32Kb, 4096 bytes each)
2 sectors (512Kb, 65,536 bytes each)
Table 8: M25PE10 Memory Organization
Sector
Subsector
1
31
0
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Address Range
1F000h
1FFFFh
⋮
⋮
⋮
16
10000h
10FFFh
15
0F000h
0FFFFh
⋮
⋮
⋮
4
04000h
04FFFh
3
03000h
03FFFh
2
02000h
02FFFh
1
01000h
01FFFh
0
00000h
00FFFh
16
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M25PE20, M25PE10 Serial Flash Embedded Memory
Memory Organization
Figure 6: M25PE10 Block Diagram
RESET#
W#
High Voltage
Generator
Control Logic
S#
C
DQ0
I/O Shift Register
DQ1
Address Register
and Counter
Status
Register
256 Byte
Data Buffer
1FFFFh
Y Decoder
1FF00h
FFFFFh
00000h
000FFh
256 bytes (page size)
X Decoder
Note:
PDF: 09005aef845660ef
m25pe20_10.pdf - Rev. C 3/13 EN
1. Entire memory array can be made read-only on a 64KB basis through the Lock Registers.
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M25PE20, M25PE10 Serial Flash Embedded Memory
Command Set Overview
Command Set Overview
All commands, addresses, and data are shifted in and out of the device, most significant
bit first.
Serial data inputs DQ0 and DQ1 are sampled on the first rising edge of serial clock (C)
after chip select (S#) is driven LOW. Then, the one-byte command code must be shifted
in to the device, most significant bit first, on DQ0 and DQ1, each bit being latched on
the rising edges of C.
Every command sequence starts with a one-byte command code. Depending on the
command, this command code might be followed by address or data bytes, by address
and data bytes, or by neither address or data bytes. For the following commands, the
shifted-in command sequence is followed by a data-out sequence. S# can be driven
HIGH after any bit of the data-out sequence is being shifted out.
•
•
•
•
READ DATA BYTES (READ)
READ DATA BYTES at HIGHER SPEED
READ STATUS REGISTER
READ TO LOCK REGISTER
For the following commands, S# must be driven HIGH exactly at a byte boundary. That
is, after an exact multiple of eight clock pulses following S# being driven LOW, S# must
be driven HIGH. Otherwise, the command is rejected and not executed.
•
•
•
•
•
•
•
•
•
•
•
•
PAGE WRITE
PAGE PROGRAM
PAGE ERASE
SUBSECTOR ERASE
SECTOR ERASE
BULK ERASE
WRITE ENABLE
WRITE DISABLE
WRITE STATUS REGISTER
WRITE TO LOCK REGISTER
DEEP POWER-DOWN
RELEASE FROM DEEP POWER-DOWN
All attempts to access the memory array are ignored during a WRITE STATUS REGISTER
command cycle, a PROGRAM command cycle, or an ERASE command cycle. In addition, the internal cycle for each of these commands continues unaffected.
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M25PE20, M25PE10 Serial Flash Embedded Memory
Command Set Overview
Table 9: Command Set Codes
Command Name
Bytes
One-Byte
Command Code
Address
Dummy
Data
WRITE ENABLE
0000 0110
06h
0
0
0
WRITE DISABLE
0000 0100
04h
0
0
0
READ IDENTIFICATION
1001 1111
9Fh
0
0
1 to 20
READ STATUS REGISTER
0000 0101
05h
0
0
1 to ∞
WRITE STATUS REGISTER
0000 0001
01h
0
0
1
WRITE to LOCK REGISTER
1110 0101
E5h
3
0
1
READ LOCK REGISTER
1110 1000
E8h
3
0
1
READ DATA BYTES
0000 0011
03h
3
0
1 to ∞
READ DATA BYTES at HIGHER
SPEED
0000 1011
0Bh
3
1
1 to ∞
PAGE WRITE
0000 1010
0Ah
3
0
1 to 256
PAGE PROGRAM
0000 0010
02h
3
0
1 to 256
PAGE ERASE
1101 1011
DBh
3
0
0
SUBSECTOR ERASE
0010 0000
20h
3
0
0
SECTOR ERASE
1101 1000
D8h
3
0
0
BULK ERASE
1100 0111
C7h
0
0
0
DEEP POWER-DOWN
1011 1001
B9h
0
0
0
RELEASE from DEEP POWERDOWN
1010 1011
ABh
0
0
0
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M25PE20, M25PE10 Serial Flash Embedded Memory
WRITE ENABLE
WRITE ENABLE
The WRITE ENABLE command sets the write enable latch (WEL) bit.
The WEL bit must be set before execution of every PAGE WRITE, PAGE PROGRAM,
PAGE ERASE, and SECTOR ERASE command.
The WRITE ENABLE command is entered by driving chip select (S#) LOW, sending the
command code, and then driving S# HIGH.
Figure 7: WRITE ENABLE Command Sequence
0
1
2
3
4
5
6
7
C
S#
Command Bits
DQ[0]
0
0
0
0
0
LSB
1
1
0
MSB
DQ1
High-Z
Don’t Care
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M25PE20, M25PE10 Serial Flash Embedded Memory
WRITE DISABLE
WRITE DISABLE
The WRITE DISABLE command resets the write enable latch (WEL) bit.
The WRITE DISABLE command is entered by driving chip select (S#) LOW, sending the
command code, and then driving S# HIGH.
The WEL bit is reset under the following conditions:
•
•
•
•
•
•
•
•
•
•
Power-up
Completion of WRITE DISABLE operation
Completion of PAGE WRITE operation
Completion of PAGE PROGRAM operation
Completion of WRITE STATUS REGISTER operation
Completion of WRITE TO LOCK REGISTER operation
Completion of PAGE ERASE operation
Completion of SUBSECTOR ERASE operation
Completion of SECTOR ERASE operation
Completion of BULK ERASE operation
Figure 8: WRITE DISABLE Command Sequence
0
1
2
3
4
5
6
7
C
S#
Command Bits
DQ[0]
0
0
0
0
0
LSB
1
0
0
MSB
DQ1
High-Z
Don’t Care
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M25PE20, M25PE10 Serial Flash Embedded Memory
READ IDENTIFICATION
READ IDENTIFICATION
The READ IDENTIFICATION command reads the following device identification data:
• Manufacturer identification (1 byte): This is assigned by JEDEC.
• Device identification (2 bytes): This is assigned by device manufacturer; the first byte
indicates memory type and the second byte indicates device memory capacity.
• A Unique ID code (UID) (17 bytes,16 available upon customer request): The first byte
contains length of data to follow; the remaining 16 bytes contain optional Customized
Factory Data (CFD) content.
Table 10: READ IDENTIFICATION Data Out Sequence
Device Identification
UID
Manufacturer
Identification
Memory Type
Memory Capacity
CFD Length
CFD Content
20h
80h
12h (M25PE20)
10h
16 bytes
20h
80h
11h (M25PE10)
10h
16 bytes
Note:
1. The CFD bytes are read-only and can be programmed with customer data upon demand.
If customers do not make requests, the devices are shipped with all the CFD bytes programmed to zero (ooh).
A READ IDENTIFICATION command is not decoded while an ERASE or PROGRAM cycle is in progress and has no effect on a cycle in progress.
The device is first selected by driving chip select (S#) LOW. Then, the 8-bit command
code is shifted in and content is shifted out on serial data output (DQ1) as follows: the
24-bit device identification that is stored in the memory, the 8-bit CFD length, followed
by 16 bytes of CFD content. Each bit is shifted out during the falling edge of serial clock
(C).
The READ IDENTIFICATION command is terminated by driving S# HIGH at any time
during data output. When S# is driven HIGH, the device is put in the STANDBY POWER
mode and waits to be selected so that it can receive, decode, and execute commands.
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M25PE20, M25PE10 Serial Flash Embedded Memory
READ STATUS REGISTER
Figure 9: READ IDENTIFICATION Command Sequence
0
7
16
15
8
31
32
C
LSB
Command
DQ0
MSB
DOUT
High-Z
DOUT
DOUT
MSB
LSB
LSB
LSB
DQ1
DOUT
DOUT
MSB
MSB
Manufacturer
identification
DOUT
Device
identification
UID
Don’t Care
READ STATUS REGISTER
The READ STATUS REGISTER command allows the status register to be read. The status
register may be read at any time, even while a PROGRAM, ERASE, or WRITE STATUS
REGISTER cycle is in progress. When one of these cycles is in progress, it is recommended to check the write in progress (WIP) bit before sending a new command to the device. It is also possible to read the status register continuously.
Figure 10: READ STATUS REGISTER Command Sequence
0
7
8
9
10
11
12
13
14
15
C
LSB
Command
DQ0
MSB
LSB
DQ1
High-Z
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
MSB
Don’t Care
WIP Bit
The write in progress (WIP) bit indicates whether the memory is busy with a WRITE cycle, a PROGRAM cycle, or an ERASE cycle. When the WIP bit is set to 1, a cycle is in progress; when the WIP bit is set to 0, a cycle is not in progress.
WEL Bit
The write enable latch (WEL) bit indicates the status of the internal write enable latch.
When the WEL bit is set to 1, the internal write enable latch is set; when the WEL bit is
set to 0, the internal write enable latch is reset and no WRITE , PROGRAM, or ERASE
command is accepted.
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M25PE20, M25PE10 Serial Flash Embedded Memory
READ STATUS REGISTER
Block Protect Bits
The block protect (BP1, BP0) bits are non-volatile. They define the size of the area to be
software protected against PROGRAM and ERASE commands. The block protect bits are
written with the WRITE STATUS REGISTER command.
When one or more of the block protect (BP1, BP0) bits is set to 1, the relevant memory
area, as defined in the Protected Area Sizes table, becomes protected against PAGE
PROGRAM, PAGE ERASE, SECTOR ERASE, and SUBSECTOR ERASE commands. The
block protect (BP1, BP0) bits can be written provided that the HARDWARE PROTECTED
mode has not been set. The BULK ERASE command is executed only if all block protect
(BP1, BP0) bits are 0 and the Lock Register protection bits are not all set to 1.
SRWD Bit
The status register write disable (SRWD) bit is operated in conjunction with the write
protect (W#) signal. When the SRWD bit is set to 1 and W# is driven LOW, the device is
put in the hardware protected mode. In the hardware protected mode, the non-volatile
bits of the status register (SRWD, BP1, BP0) become read-only bits and the WRITE STATUS REGISTER command is no longer accepted for execution.
Figure 11: Status Register Format
b7
SRWD
b0
0
0
0
BP1
BP0
WEL
WIP
status register write protect
block protect bits
write enable latch bit
write in progress bit
Note: WEL and WIP are volatile read-only bits (WEL is set and reset by specific instructions; WIP is automatically
set and rest by the internal logic of the device).
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M25PE20, M25PE10 Serial Flash Embedded Memory
WRITE STATUS REGISTER
WRITE STATUS REGISTER
The WRITE STATUS REGISTER command allows new values to be written to the status
register. Before the WRITE STATUS REGISTER command can be accepted, a WRITE ENABLE command must have been executed previously. After the WRITE ENABLE command has been decoded and executed, the device sets the write enable latch (WEL) bit.
The WRITE STATUS REGISTER command is entered by driving chip select (S#) LOW,
followed by the command code and the data byte on serial data input (DQ0). The
WRITE STATUS REGISTER command has no effect on b6, b5, b4, b1 and b0 of the status
register. The status register b6, b5, and b4 are always read as 0. S# must be driven HIGH
after the eighth bit of the data byte has been latched in. If not, the WRITE STATUS REGISTER command is not executed.
Figure 12: WRITE STATUS REGISTER Command Sequence
0
7
8
9
10
11
12
13
15
14
C
LSB
Command
DQ0
MSB
LSB
DIN
DIN
DIN
DIN
DIN
DIN
DIN
DIN
DIN
MSB
As soon as S# is driven HIGH, the self-timed WRITE STATUS REGISTER cycle is initiated; its duration is tW. While the WRITE STATUS REGISTER cycle is in progress, the status register may still be read to check the value of the write in progress (WIP) bit. The
WIP bit is 1 during the self-timed WRITE STATUS REGISTER cycle, and is 0 when the
cycle is completed. Also, when the cycle is completed, the WEL bit is reset.
The WRITE STATUS REGISTER command allows the user to change the values of the
block protect bits. Setting these bit values defines the size of the area that is to be treated as read-only, as defined in the Protected Area Sizes table.
The WRITE STATUS REGISTER command also allows the user to set and reset the status
register write disable (SRWD) bit in accordance with the write protect (W#) signal. The
SRWD bit and the W# signal allow the device to be put in the HARDWARE PROTECTED
(HPM) mode. The WRITE STATUS REGISTER command is not executed once the HPM
is entered. The options for enabling the status register protection modes are summarized here.
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M25PE20, M25PE10 Serial Flash Embedded Memory
WRITE STATUS REGISTER
Table 11: Status Register Protection Modes
Memory Content
W#
Signal
SRWD
Bit
1
0
0
0
1
1
0
1
Protection
Mode (PM)
Status Register
Write Protection
Protected
Area1
Unprotected
Area1
SECOND SOFTWARE
PROTECTED mode
(SPM2)
Software protection
Commands not
accepted
Commands
accepted
HARDWARE
PROTECTED mode
(HPM)
Hardware protection
Commands not
accepted
Commands
accepted
Note:
1. As defined by the values in the Block Protect bits of the status register.
When the SRWD bit of the status register is 0 (its initial delivery state), it is possible to
write to the status register provided that the WEL bit has been set previously by a WRITE
ENABLE command, regardless of whether the W# signal is driven HIGH or LOW. When
the status register SRWD bit is set to 1, two cases need to be considered depending on
the state of the W# signal:
• If the W# signal is driven HIGH, it is possible to write to the status register provided
that the WEL bit has been set previously by a WRITE ENABLE command.
• If the W# signal is driven LOW, it is not possible to write to the status register even if
the WEL bit has been set previously by a WRITE ENABLE command. Therefore, attempts to write to the status register are rejected, and are not accepted for execution.
The result is that all the data bytes in the memory area that have been put in SPM2 by
the status register block protect bits (BP1, BP0) are also hardware protected against
data modification.
Regardless of the order of the two events, the HPM can be entered in either of the following ways:
• Setting the status register SRWD bit after driving the W# signal LOW
• Driving the W# signal LOW after setting the status register SRWD bit.
The only way to exit the HPM is to pull the W# signal HIGH. If the W# signal is permanently tied HIGH, the HPM can never be activated. In this case, only the SPM2 is available, using the status register block protect bits.
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M25PE20, M25PE10 Serial Flash Embedded Memory
READ DATA BYTES
READ DATA BYTES
The device is first selected by driving chip select (S#) LOW. The command code for
READ DATA BYTES is followed by a 3-byte address (A23-A0), each bit being latched-in
during the rising edge of serial clock (C). Then the memory contents at that address is
shifted out on serial data output (DQ1), each bit being shifted out at a maximum frequency fR during the falling edge of C.
The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Therefore, the entire
memory can be read with a single READ DATA BYTES command. When the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence
to be continued indefinitely.
The READ DATA BYTES command is terminated by driving S# HIGH. S# can be driven
HIGH at any time during data output. Any READ DATA BYTES command issued while
an ERASE, PROGRAM, or WRITE cycle is in progress is rejected without any effect on
the cycle that is in progress.
Figure 13: READ DATA BYTES Command Sequence
0
7
8
Cx
C
LSB
MSB
DQ1
A[MIN]
Command
DQ[0]
A[MAX]
DOUT
High-Z
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
LSB
DOUT
DOUT
MSB
Don’t Care
Note:
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1. Address bits A23-A18 are don't care in the M25PE20. Address bits A23-A17 are don't
care in the M25PE10.
27
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M25PE20, M25PE10 Serial Flash Embedded Memory
READ DATA BYTES at HIGHER SPEED
READ DATA BYTES at HIGHER SPEED
The device is first selected by driving chip select (S#) LOW. The command code for the
READ DATA BYTES at HIGHER SPEED command is followed by a 3-byte address (A23A0) and a dummy byte, each bit being latched-in during the rising edge of serial clock
(C). Then the memory contents at that address are shifted out on serial data output
(DQ1) at a maximum frequency fC, during the falling edge of C.
The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Therefore, the entire
memory can be read with a single READ DATA BYTES at HIGHER SPEED command.
When the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence to be continued indefinitely.
The READ DATA BYTES at HIGHER SPEED command is terminated by driving S# HIGH.
S# can be driven HIGH at any time during data output. Any READ DATA BYTES at
HIGHER SPEED command issued while an ERASE, PROGRAM, or WRITE cycle is in
progress is rejected without any effect on the cycle that is in progress.
Figure 14: READ DATA BYTES at HIGHER SPEED Command Sequence
0
7
8
Cx
C
LSB
A[MIN]
Command
DQ0
MSB
DQ1
A[MAX]
DOUT
High-Z
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
LSB
DOUT
DOUT
MSB
Dummy cycles
Note:
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Don’t Care
1. Address bits A23-A18 are don't care in the M25PE20. Address bits A23-A17 are don't
care in the M25PE10.
28
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M25PE20, M25PE10 Serial Flash Embedded Memory
READ LOCK REGISTER
READ LOCK REGISTER
The device is first selected by driving chip select (S#) LOW. The command code for the
READ LOCK REGISTER command is followed by a 3-byte address (A23-A0) pointing to
any location inside the concerned sector (or subsector). Each address bit is latched-in
during the rising edge of serial clock (C). Then the value of the lock register is shifted
out on serial data output (DQ1), each bit being shifted out at a maximum frequency fC
during the falling edge of C.
The READ LOCK REGISTER command is terminated by driving S# HIGH at any time
during data output.
Figure 15: READ LOCK REGISTER Command Sequence
0
7
8
Cx
C
LSB
MSB
DQ1
A[MIN]
Command
DQ[0]
A[MAX]
DOUT
High-Z
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
LSB
DOUT
DOUT
MSB
Don’t Care
Any READ LOCK REGISTER command issued while an ERASE, PROGRAM, or WRITE
cycle is in progress is rejected without any effect on the cycle that is in progress.
Values of b1 and b0 after power-up are defined in the table below.
Table 12: Lock Register Out
Bit
Bit name
Value
b7-b4
b1
b0
Function
Reserved
Sector lock down
Sector write lock
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1
The write lock and lock-down bits cannot be changed. Once a value of 1 is written to the lock-down bit, it cannot be cleared to a value of 0 except by a powerup.
0
The write lock and lock-down bits can be changed by writing new values to
them.
1
WRITE, PROGRAM, and ERASE operations in this sector will not be executed. The
memory contents will not be changed.
0
WRITE, PROGRAM, or ERASE operations in this sector are executed and will
modify the sector contents.
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M25PE20, M25PE10 Serial Flash Embedded Memory
PAGE WRITE
PAGE WRITE
The PAGE WRITE command allows bytes in the memory to be programmed. Before a
PAGE WRITE command can be accepted a WRITE ENABLE command must be executed. After the WRITE ENABLE command has been decoded, the device sets the write enable latch (WEL) bit.
The PAGE WRITE command is entered by driving chip select (S#) LOW, followed by the
command code, three address bytes, and at least one data byte on serial data input
(DQ0). The reset of the page remains unchanged if no power failure occurs during this
write cycle.
The PAGE WRITE command performs a page erase cycle even if only one byte is updated.
If the eight least-significant address bits (A7-A0) are not all zero, all transmitted data
that goes beyond the end of the current page are programmed from the start address of
the same page; that is, from the address whose eight least significant bits (A7-A0) are all
zero. S# must be driven LOW for the entire duration of the sequence.
If more than 256 bytes are sent to the device, previously latched data is discarded and
the last 256 data bytes are guaranteed to be programmed correctly within the same
page. If less than 256 data bytes are sent to device, they are correctly programmed at the
requested addresses without any effects on the other bytes of the same page.
For optimized timings, it is recommended to use the PAGE WRITE command to program all consecutive targeted bytes in a single sequence rather than to use several PAGE
WRITE sequences, each containing only a few bytes.
S# must be driven HIGH after the eighth bit of the last data byte has been latched in.
Otherwise the PAGE WRITE command is not executed.
As soon as S# is driven HIGH, the self-timed PAGE WRITE cycle is initiated. While the
PAGE WRITE cycle is in progress, the status register may be read to check the value of
the write in progress (WIP) bit. The WIP bit is 1 during the self-timed PAGE WRITE cycle, and 0 when the cycle is completed. At some unspecified time before the cycle is
completed, the write enable latch (WEL) bit is reset.
A PAGE WRITE command applied to a page that is hardware or software protected is
not executed.
Any PAGE WRITE command while an ERASE, PROGRAM, or WRITE cycle is in progress
is rejected without having any effects on the cycle that is in progress.
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M25PE20, M25PE10 Serial Flash Embedded Memory
PAGE WRITE
Figure 16: PAGE WRITE Command Sequence
S#
0
1
2
3
4
5
6
7
8
9
10
28
29
30 31
32
33 34
35
36 37
38
39
C
24-bit address
instruction
23
DQ0
22
21
3
2
data byte 1
1
MSB
0
7
6
5
4
3
2
1
0
MSB
47
48
49
50
51
52
53
54
55
2079
46
2078
45
2077
44
2076
43
2075
42
2074
41
2073
40
2072
S#
1
0
C
data byte 2
DQ0
7
MSB
6
5
4
3
data byte 3
2
1
0
7
6
5
4
3
MSB
data byte 256
2
1
0
7
6
5
4
3
2
MSB
Note:
Address bits A23-A18 are don't care in the M25PE20. Address bits A23-A17 are don't care in the M25PE10. 1≤n≤256.
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M25PE20, M25PE10 Serial Flash Embedded Memory
PAGE PROGRAM
PAGE PROGRAM
The PAGE PROGRAM command allows bytes in the memory to be programmed, which
means the bits are changed from 1 to 0. Before a PAGE PROGRAM command can be accepted a WRITE ENABLE command must be executed. After the WRITE ENABLE command has been decoded, the device sets the write enable latch (WEL) bit.
The PAGE PROGRAM command is entered by driving chip select (S#) LOW, followed by
the command code, three address bytes, and at least one data byte on serial data input
(DQ0).
If the eight least significant address bits (A7-A0) are not all zero, all transmitted data that
goes beyond the end of the current page are programmed from the start address of the
same page; that is, from the address whose eight least significant bits (A7-A0) are all
zero. S# must be driven LOW for the entire duration of the sequence.
If more than 256 bytes are sent to the device, previously latched data are discarded and
the last 256 data bytes are guaranteed to be programmed correctly within the same
page. If less than 256 data bytes are sent to device, they are correctly programmed at the
requested addresses without any effects on the other bytes of the same page.
For optimized timings, it is recommended to use the PAGE PROGRAM command to
program all consecutive targeted bytes in a single sequence rather than to use several
PAGE PROGRAM sequences, each containing only a few bytes.
S# must be driven HIGH after the eighth bit of the last data byte has been latched in.
Otherwise the PAGE PROGRAM command is not executed.
As soon as S# is driven HIGH, the self-timed PAGE PROGRAM cycle is initiated; the cycles's duration is tPP. While the PAGE PROGRAM cycle is in progress, the status register
may be read to check the value of the write in progress (WIP) bit. The WIP bit is 1 during
the self-timed PAGE PROGRAM cycle, and 0 when the cycle is completed. At some unspecified time before the cycle is completed, the write enable latch (WEL) bit is reset.
A PAGE PROGRAM command applied to a page that is hardware protected is not executed.
Any PAGE PROGRAM command while an ERASE, PROGRAM, or WRITE cycle is in progress is rejected without having any effects on the cycle that is in progress.
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M25PE20, M25PE10 Serial Flash Embedded Memory
PAGE PROGRAM
Figure 17: PAGE PROGRAM Command Sequence
S#
0
1
2
3
4
5
6
7
8
9
10
28
29
30 31
32
33 34
35
36 37
38
39
C
24-bit address
instruction
23
DQ0
22
21
3
2
data byte 1
1
MSB
7
0
6
5
4
3
2
1
0
MSB
S#
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
C
data byte 2
DQ0
7
6
MSB
Note:
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5
4
3
data byte 3
2
1
0
7
6
5
4
MSB
3
data byte n
2
1
0
7
6
5
4
3
2
1
0
MSB
1. Address bits A23-A18 are don't care in the M25PE20. Address bits A23-A17 are don't
care in the M25PE10. 1≤n≤ 256.
33
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© 2013 Micron Technology, Inc. All rights reserved.
M25PE20, M25PE10 Serial Flash Embedded Memory
WRITE to LOCK REGISTER
WRITE to LOCK REGISTER
The WRITE to LOCK REGISTER instruction allows the lock register bits to be changed.
Before the WRITE to LOCK REGISTER instruction can be accepted, a WRITE ENABLE
instruction must have been executed previously. After the WRITE ENABLE instruction
has been decoded, the device sets the write enable latch (WEL) bit.
The WRITE to LOCK REGISTER instruction is entered by driving chip select (S#) LOW,
followed by the instruction code, three address bytes, and one data byte on serial data
input (DQ0). The address bytes must point to any address in the targeted sector. S#
must be driven HIGH after the eighth bit of the data byte has been latched in. Otherwise
the WRITE to LOCK REGISTER instruction is not executed.
Lock register bits are volatile, and therefore do not require time to be written. When the
WRITE to LOCK REGISTER instruction has been successfully executed, the WEL bit is
reset after a delay time of less than tSHSL minimum value.
Any WRITE to LOCK REGISTER instruction issued while an ERASE, PROGRAM, or
WRITE cycle is in progress is rejected without any effect on the cycle that is in progress.
Figure 18: WRITE to LOCK REGISTER Instruction Sequence
S#
0
1
2
3
4
5
6
7
8
9
10
28
29
30 31
32
33 34
35
36 37
38
39
1
0
C
instruction
24-bit address
23
DQ0
22 21
3
MSB
2
lock register in
1
0
7
6
5
4
3
2
MSB
Table 13: Lock Register In
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m25pe20_10.pdf - Rev. C 3/13 EN
Sector
Bit
Value
All sectors
b7–b2
0
b1
Sector lock-down bit value
b0
Sector write lock bit value
34
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© 2013 Micron Technology, Inc. All rights reserved.
M25PE20, M25PE10 Serial Flash Embedded Memory
PAGE ERASE
PAGE ERASE
The PAGE ERASE command sets to 1 (FFh) all bits inside the chosen page. Before the
PAGE ERASE command can be accepted, a WRITE ENABLE command must have been
executed previously. After the WRITE ENABLE command has been decoded, the device
sets the write enable latch (WEL) bit.
The PAGE ERASE command is entered by driving chip select (S#) LOW, followed by the
command code, and three address bytes on serial data input (DQ0). Any address inside
the sector is a valid address for the PAGE ERASE command. S# must be driven LOW for
the entire duration of the sequence.
S# must be driven HIGH after the eighth bit of the last address byte has been latched in.
Otherwise the PAGE ERASE command is not executed. As soon as S# is driven HIGH,
the self-timed PAGE ERASE cycle is initiated; the cycle's duration is tPE. While the PAGE
ERASE cycle is in progress, the status register may be read to check the value of the write
in progress (WIP) bit. The WIP bit is 1 during the self-timed PAGE ERASE cycle, and is 0
when the cycle is completed. At some unspecified time before the cycle is completed,
the WEL bit is reset.
A PAGE ERASE command applied to a page that is hardware or software protected is not
executed.
A PAGE ERASE command while an ERASE, PROGRAM, or WRITE cycle is in progress is
rejected without having any effects on the cycle that is in progress.
Figure 19: PAGE ERASE Command Sequence
0
7
8
Cx
C
LSB
DQ0
MSB
Note:
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A[MIN]
Command
A[MAX]
1. Address bits A23-A18 are don't care in the M25PE20. Address bits A23-A17 are don't
care in the M25PE10.
35
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© 2013 Micron Technology, Inc. All rights reserved.
M25PE20, M25PE10 Serial Flash Embedded Memory
SUBSECTOR ERASE
SUBSECTOR ERASE
The SUBSECTOR ERASE command sets to 1 (FFh) all bits inside the chosen subsector.
Before the SUBSECTOR ERASE command can be accepted, a WRITE ENABLE command must have been executed previously. After the WRITE ENABLE command has
been decoded, the device sets the write enable latch (WEL) bit.
The SUBSECTOR ERASE command is entered by driving chip select (S#) LOW, followed
by the command code, and three address bytes on serial data input (DQ0). Any address
inside the subsector is a valid address for the SUBSECTOR ERASE command. S# must
be driven LOW for the entire duration of the sequence.
S# must be driven HIGH after the eighth bit of the last address byte has been latched in.
Otherwise the SUBSECTOR ERASE command is not executed. As soon as S# is driven
HIGH, the self-timed SUBSECTOR ERASE cycle is initiated; the cycle's duration is tSSE.
While the SUBSECTOR ERASE cycle is in progress, the status register may be read to
check the value of the write in progress (WIP) bit. The WIP bit is 1 during the self-timed
SUBSECTOR ERASE cycle, and is 0 when the cycle is completed. At some unspecified
time before the cycle is complete, the WEL bit is reset.
A SUBSECTOR ERASE command issued to a sector that is hardware or software protected is not executed.
Any SUBSECTOR ERASE command issued while an ERASE, PROGRAM, or WRITE cycle
is in progress is rejected without any effect on the cycle that is in progress.
If RESET# is driven LOW while a SUBSECTOR ERASE cycle is in progress, the SUBSECTOR ERASE cycle is interrupted and data may not be erased correctly. On RESET# going
LOW, the device enters the RESET mode and a time of tRHSL is then required before the
device can be reselected by driving S# LOW.
Figure 20: SUBSECTOR ERASE Command Sequence
S#
0
1
2
3
4
5
6
7
8
9
29
30
31
1
0
C
instruction
24 bit address
23
DQ0
22
2
MSB
Note:
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m25pe20_10.pdf - Rev. C 3/13 EN
1. Address bits A23-A18 are don't care in the M25PE20. Address bits A23-A17 are don't
care in the M25PE10.
36
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© 2013 Micron Technology, Inc. All rights reserved.
M25PE20, M25PE10 Serial Flash Embedded Memory
SECTOR ERASE
SECTOR ERASE
The SECTOR ERASE command sets to 1 (FFh) all bits inside the chosen sector. Before
the SECTOR ERASE command can be accepted, a WRITE ENABLE command must have
been executed previously. After the WRITE ENABLE command has been decoded, the
device sets the write enable latch (WEL) bit.
The SECTOR ERASE command is entered by driving chip select (S#) LOW, followed by
the command code, and three address bytes on serial data input (DQ0). Any address inside the sector is a valid address for the SECTOR ERASE command. S# must be driven
LOW for the entire duration of the sequence.
S# must be driven HIGH after the eighth bit of the last address byte has been latched in.
Otherwise the SECTOR ERASE command is not executed. As soon as S# is driven HIGH,
the self-timed SECTOR ERASE cycle is initiated; the cycle's duration is tSE. While the
SECTOR ERASE cycle is in progress, the status register may be read to check the value of
the write in progress (WIP) bit. The WIP bit is 1 during the self-timed SECTOR ERASE
cycle, and is 0 when the cycle is completed. At some unspecified time before the cycle is
completed, the WEL bit is reset.
A SECTOR ERASE command applied to a sector that contains a page that is hardware
protected is not executed.
Any SECTOR ERASE command while an ERASE, PROGRAM, or WRITE cycle is in progress is rejected without having any effects on the cycle that is in progress.
Figure 21: SECTOR ERASE Command Sequence
S#
0
1
2
3
4
5
6
7
8
9
29
30
31
1
0
C
instruction
24 bit address
23
DQ0
22
2
MSB
Note:
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m25pe20_10.pdf - Rev. C 3/13 EN
1. Address bits A23-A18 are don't care in the M25PE20. Address bits A23-A17 are don't
care in the M25PE10.
37
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© 2013 Micron Technology, Inc. All rights reserved.
M25PE20, M25PE10 Serial Flash Embedded Memory
BULK ERASE
BULK ERASE
The BULK ERASE command sets all bits to 1 (FFh). Before the BULK ERASE command
can be accepted, a WRITE ENABLE command must have been executed previously. After the WRITE ENABLE command has been decoded, the device sets the write enable
latch (WEL) bit.
The BULK ERASE command is entered by driving chip select (S#) LOW, followed by the
command code on serial data input (DQ0). S# must be driven LOW for the entire duration of the sequence.
S# must be driven HIGH after the eighth bit of the command code has been latched in;
otherwise, the BULK ERASE command is not executed. As soon as S# is driven HIGH,
the self-timed BULK ERASE cycle is initiated; the cycle's duration is tBE. While the BULK
ERASE cycle is in progress, the status register may be read to check the value of the write
In progress (WIP) bit. The WIP bit is 1 during the self-timed BULK ERASE cycle, and is 0
when the cycle is completed. At some unspecified time before the cycle is completed,
the WEL bit is reset.
Any BULK ERASE command while an ERASE, PROGRAM, or WRITE cycle is in progress
is rejected without having any effects on the cycle that is in progress. A BULK ERASE
command is ignored if at least one sector or subsector is write-protected (hardware or
software protection).
If RESET# is driven LOW while a BULK ERASE is in progress, the BULK ERASE cycle is
interrupted and data may not be erased correctly. On RESET# going LOW, the device enters the RESET mode and a time of tRHSL is then required before the device can be reselected by driving S# LOW.
Figure 22: BULK ERASE Command Sequence
0
7
C
LSB
Command
DQ0
MSB
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M25PE20, M25PE10 Serial Flash Embedded Memory
DEEP POWER-DOWN
DEEP POWER-DOWN
Executing the DEEP POWER-DOWN command is the only way to put the device in the
lowest power consumption mode, the DEEP POWER-DOWN mode. The DEEP POWERDOWN command can also be used as a software protection mechanism while the device is not in active use because in the DEEP POWER-DOWN mode the device ignores
all WRITE, PROGRAM, and ERASE commands.
Driving chip select (S#) HIGH deselects the device, and puts it in the STANDBY POWER
mode if there is no internal cycle currently in progress. Once in STANDBY POWER
mode, the DEEP POWER-DOWN mode can be entered by executing the DEEP POWERDOWN command, subsequently reducing the standby current from ICC1 to ICC2.
To take the device out of DEEP POWER-DOWN mode, the RELEASE from DEEP POWER-DOWN command must be issued. Other commands must not be issued while the
device is in DEEP POWER-DOWN mode. The DEEP POWER-DOWN mode stops automatically at power-down. The device always powers up in STANDBY POWER mode.
The DEEP POWER-DOWN command is entered by driving S# LOW, followed by the
command code on serial data input (DQ0). S# must be driven LOW for the entire duration of the sequence.
S# must be driven HIGH after the eighth bit of the command code has been latched in.
Otherwise the DEEP POWER-DOWN command is not executed. As soon as S# is driven
HIGH, it requires a delay of tDP before the supply current is reduced to ICC2 and the
DEEP POWER-DOWN mode is entered.
Any DEEP POWER-DOWN command issued while an ERASE, PROGRAM, or WRITE cycle is in progress is rejected without any effect on the cycle that is in progress.
Figure 23: DEEP POWER-DOWN Command Sequence
0
7
C
LSB
t
DP
Command
DQ0
MSB
Standby Mode
Deep Power-Down Mode
Don’t Care
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M25PE20, M25PE10 Serial Flash Embedded Memory
RELEASE from DEEP POWER-DOWN
RELEASE from DEEP POWER-DOWN
Once the device has entered DEEP POWER-DOWN mode, all commands are ignored except RELEASE from DEEP POWER-DOWN. Executing this command takes the device
out of the DEEP POWER-DOWN mode.
The RELEASE from DEEP POWER-DOWN command is entered by driving chip select
(S#) LOW, followed by the command code on serial data input (DQ0). S# must be driven
LOW for the entire duration of the sequence.
The RELEASE from DEEP POWER-DOWN command is terminated by driving S# high.
Sending additional clock cycles on serial clock C while S# is driven LOW causes the
command to be rejected and not executed.
After S# has been driven high, followed by a delay, tRDP, the device is put in the STANDBY mode. S# must remain HIGH at least until this period is over. The device waits to be
selected so that it can receive, decode, and execute commands.
Any RELEASE from DEEP POWER-DOWN command issued while an ERASE, PROGRAM, or WRITE cycle is in progress is rejected without any effect on the cycle that is in
progress.
Figure 24: RELEASE from DEEP POWER-DOWN Command Sequence
0
7
C
LSB
RDP
t
Command
DQ0
MSB
DQ1
High-Z
Deep Power-Down Mode
Standby Mode
Don’t Care
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M25PE20, M25PE10 Serial Flash Embedded Memory
Power-Up and Power-Down
Power-Up and Power-Down
At power-up and power-down, the device must not be selected; that is, chip select (S#)
must follow the voltage applied on V CC until V CC reaches the correct value:
• VCC(min) at power-up, and then for a further delay of tVSL
• VSS at power-down
A safe configuration is provided under the SPI modes heading.
To avoid data corruption and inadvertent write operations during power-up, a poweron-reset (POR) circuit is included. The logic inside the device is held reset while V CC is
less than the POR threshold voltage, V WI – all operations are disabled, and the device
does not respond to any instruction. Moreover, the device ignores the following instructions until a time delay of tPUW has elapsed after the moment that V CC rises above the
VWI threshold:
•
•
•
•
•
WRITE ENABLE
PAGE WRITE
PAGE PROGRAM
PAGE ERASE
SECTOR ERASE
However, the correct operation of the device is not guaranteed if, by this time, V CC is still
below V CC(min). No WRITE, PROGRAM, or ERASE instruction should be sent until:
• tPUW after V CC has passed the V WI threshold
• tVSL after V CC has passed the V CC(min) level
If the time, tVSL, has elapsed, after V CC rises above V CC(min), the device can be selected
for READ instructions even if the tPUW delay has not yet fully elapsed.
As an extra precaution, the RESET# signal could be driven LOW for the entire duration
of the power-up and power-down phases.
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M25PE20, M25PE10 Serial Flash Embedded Memory
Power-Up and Power-Down
Figure 25: Power-Up Timing
VCC
VCC,max
PROGRAM, ERASE, and WRITE commands are rejected by the device
Chip selection not allowed
VCC,min
t
RESET state
of the
device
VSL
READ access allowed
Device fully
accessible
VWI
t
PUW
Time
Table 14: Power-up Timing and VWI Threshold
Note: These parameters are characterized only, over the temperature range -40 °C to +85 °C.
Symbol
Parameter
Min
Max
Unit
tVSL
VCC(min) to S# LOW
30
–
µs
tPUW
Time delay before the first WRITE, PROGRAM, or ERASE instruction
1
10
ms
VWI
Write inhibit voltage
1.5
2.5
V
After power-up, the device is in the following state:
•
•
•
•
Standby Power mode (not the Deep Power-down mode).
Write enable latch (WEL) bit is reset.
Write in progress (WIP) bit is reset.
The Lock Registers are reset (write lock bit, lock down bit) = (0,0).
Normal precautions must be taken for supply line decoupling to stabilize the V CC supply. Each device in a system should have the V CC line decoupled by a suitable capacitor
close to the package pins; generally, this capacitor is of the order of 100 nF.
At power-down, when V CC drops from the operating voltage to below the POR threshold
voltage V WI, all operations are disabled and the device does not respond to any instruction.
Note: Designers need to be aware that if power-down occurs while a WRITE, PROGRAM, or ERASE cycle is in progress, some data corruption may result.
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M25PE20, M25PE10 Serial Flash Embedded Memory
RESET
RESET
Driving RESET# LOW while an internal operation is in progress will affect this operation
(WRITE, PROGRAM, or ERASE cycle) and data may be lost. All lock bits are reset to 0
after a RESET# LOW pulse.
Table 15: Device Status After a RESET# LOW Pulse
Conditions: RESET Pulse Occurred
Lock Bits
Status
Internal
Logic Status
Addressed
Data
Reset to 0
Same as
power-on/reset
Not significant
While decoding the following commands:
WRITE ENABLE, WRITE DISABLE, READ ID, READ STATUS REGISTER, READ, READ LOCK REGISTER, FAST READ, WRITE LOCK
REGISTER, PAGE WRITE, PAGE PROGRAM, PAGE ERASE, SECTOR ERASE, BULK ERASE, SUBSECTOR ERASE, DEEP POWERDOWN, RELEASE DEEP POWER-DOWN
Under completion of ERASE or PROGRAM cycle for the following commands:
PAGE WRITE, PAGE PROGRAM, PAGE ERASE, SUBSECTOR
ERASE, SECTOR ERASE, or BULK ERASE
Reset to 0
Equivalent to
power-on/reset
Addressed data
could be modified
Under completion of a WRITE STATUS REGISTER operation
Reset to 0
Equivalent to
power-on/reset
(after tW)
Write is correctly
completed
Device deselected (S# HIGH) and in STANDBY mode
Reset to 0
Same as
power-on/reset
Not significant
Note:
1. S# remains LOW while RESET# is LOW.
Initial Delivery State
The device is delivered with the memory array erased: all bits are set to 1 (each byte
contains FFh). All usable status register bits are 0.
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M25PE20, M25PE10 Serial Flash Embedded Memory
Maximum Ratings and Operating Conditions
Maximum Ratings and Operating Conditions
CAUTION: Stressing the device beyond the absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and operation of the device
beyond any specification or condition in the operating sections of this datasheet is not
recommended. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
Table 16: Absolute Maximum Ratings
Symbol
Parameter
TSTG
Storage temperature
TLEAD
Lead temperature during soldering
Min
Max
Units
–65
150
°C
See note
°C
VIO
Input and output voltage (with respect to
ground)
–0.6
VCC+0.6
V
VCC
Supply voltage
–0.6
4.0
V
VESD
Electrostatic discharge voltage (Human Body
model)
–2000
2000
V
Notes:
Notes
1
2
1. The TLEAD signal is compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the Micron RoHS compliant 7191395 specification, and the European directive
on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
2. The VESD signal: JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).
Table 17: Operating Conditions
Symbol
Parameter
Min
Max
Unit
VCC
Supply voltage
2.7
3.6
V
TA
Ambient operating temperature (grade 6)
–40
85
°C
TA
Ambient operating temperature (grade 3)
–40
125
°C
Note:
PDF: 09005aef845660ef
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Notes
1
1. Only for 1Mb device.
44
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M25PE20, M25PE10 Serial Flash Embedded Memory
DC Parameters
DC Parameters
Table 18: DC Characteristics
Symbol
ILI
Parameter
Test Conditons
(in addition to those listed in Operating Conditions table)
Min
Max
Units
–
–
±2
µA
Input leakage current
ILO
Output leakage current
–
–
±2
µA
ICC1
Standby current (Standby and Reset modes)
S# = VCC, VIN = VSS or VCC
–
50
µA
ICC2
Deep power-down current
S# = VCC, VIN = VSS or VCC
–
10
µA
ICC3
Operating current (FAST_READ)
C = 0.1VCC / 0.9VCC at 33 MHz, DQ1 =
open
–
4
mA
C = 0.1VCC / 0.9VCC at 75 MHz, DQ1 =
open
–
12
mA
ICC4
Operating current
(PAGE WRITE)
S# = VCC
–
15
mA
ICC5
Operating current
(SECTOR ERASE)
S# = VCC
–
15
mA
VIL
Input Low Voltage
-0.5
0.3VCC
V
0.7VCC
VCC+0.4
V
0.4
V
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 1.6mA
VOH
Output High Voltage
IOH = -100 µA
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45
VCC-0.2
V
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M25PE20, M25PE10 Serial Flash Embedded Memory
AC Characteristics
AC Characteristics
In the following AC measurement conditions, output HIGH-Z is defined as the point
where data out is no longer driven.
Table 19: AC Measurement Conditions
Symbol
CL
Parameter
Min
Max
Unit
30
30
pF
–
5
ns
Input pulse voltages
0.2VCC
0.8VCC
V
Input and output timing reference voltages
0.3VCC
0.7VCC
V
Load capacitance
Input rise and fall times
Figure 26: AC Measurement I/O Waveform
Input levels
Input and output
timing reference levels
0.8VCC
0.7VCC
0.5VCC
0.2VCC
0.3VCC
Table 20: Capacitance
Symbol Parameter
Min
Max
Unit
Notes
COUT
Output capacitance (DQ0/DQ1)
VOUT = 0 V
–
8
pF
1
CIN
Input capacitance (other pins)
VIN = 0 V
–
6
pF
Note:
PDF: 09005aef845660ef
m25pe20_10.pdf - Rev. C 3/13 EN
Test condition
1. Values are sampled only, not 100% tested, at TA=25°C and a frequency of 25MHz.
46
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
M25PE20, M25PE10 Serial Flash Embedded Memory
AC Characteristics
Table 21: AC Specifications (50 MHz operation)
Test conditions are specified in the Operating Conditions and AC Measurement Conditions tables.
Symbol
Alt.
Parameter
Min
Typ
Max
Unit
Notes
fC
fC
Clock frequency for the following commands:
FAST_READ, RDLR, PW, PP, WRLR, PE, SE, SSE,
DP, RDP, WREN, WRDI, RDSR, WRSR
D.C.
–
50
MHz
fR
–
Clock frequency for READ command
D.C.
–
33
MHz
tCH
tCLH
Clock HIGH time
9
–
–
ns
1
tCL
tCLL
Clock LOW time
9
–
–
ns
1
2
tSLCH
tCSS
Clock Slew Rate (peak to peak)
tCHSL
0.1
–
–
V/ns
S# active setup time (relative to C)
5
–
–
ns
S# not active hold time (relative to C)
5
–
–
ns
tDVCH
tDSU
Data In setup time
2
–
–
ns
tCHDX
tDH
Data In hold time
5
–
–
ns
tCHSH
–
S# active hold time (relative to C)
5
–
–
ns
tSHCH
–
S# not active setup time (relative to C)
5
–
–
ns
tSHSL
tCSH
S# deselect time
100
–
–
ns
tSHQZ
tDIS
Output disable time
–
–
8
ns
tCLQV
tV
Clock LOW to output valid
–
–
8
ns
tCLQX
tHO
Output hold time
0
–
–
ns
tWHSL
–
WRITE PROTECT setup time
50
–
–
ns
3
tSHWL
–
WRITE PROTECT hold time
100
–
–
ns
3
tDP
–
S# to DEEP POWER-DOWN mode
–
–
3
μs
2
tRDP
–
S# HIGH to STANDBY mode
–
–
30
μs
2
tW
–
WRITE STATUS REGISTER cycle time
3
15
ms
tPW
–
PAGE WRITE cycle time (256 bytes)
–
11
23
ms
4
tPP
–
PAGE PROGRAM cycle time (256 bytes)
–
0.8
3
ms
4
tPP
–
PAGE PROGRAM cycle time (n bytes)
–
int(n/8) x 0.025
3
ms
4,5
tPE
–
PAGE ERASE cycle time
–
10
20
ms
tSE
–
SECTOR ERASE cycle time
–
1.5
5
s
tSSE
–
SUBSECTOR ERASE cycle time
–
80
150
ms
tBE
–
BULK ERASE cycle time
–
4.5
10
s
Notes:
PDF: 09005aef845660ef
m25pe20_10.pdf - Rev. C 3/13 EN
2
1.
2.
3.
4.
The tCH and tCL signal values must be greater than or equal to 1/fC.
Signal values are guaranteed by characterization, not 100% tested in production.
Only applicable as a constraint for a WRSR instruction when SRWD is set to 1.
When using PP and PW commands to update consecutive bytes, optimized timings are
obtained with one sequence including all the bytes versus several sequences of only a
few bytes (1
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