M25PX16 Serial Flash Embedded Memory
Features
M25PX16 NOR Serial Flash Embedded
Memory
16Mb, Dual I/O, 4KB Subsector Erase, 3V Serial Flash Memory
with 75 MHz SPI Bus Interface
Features
• Write protections
– Software write protection: applicable to every
64KB sector (volatile lock bit)
– Hardware write protection: non-volatile bits BP0,
BP1, BP2 define protected area size
• Deep power down: 5µA typical
• Electronic signature
– JEDEC standard 2-byte signature (7115h)
– Unique ID code (UID) with 16-byte read-only
space, available upon request
• More than 100,000 write cycles per sector
• More than 20 years data retention
• Packages (RoHS compliant)
– VFQFPN8 (MP) 6mm x 5mm
– SO8W (MW) 208 mils
– SO8N (MN) 150 mils
– TBGA24 (ZM) 6mm x 8mm
• Automotive certified parts available
•
•
•
•
SPI bus compatible serial interface
75 MHz (maximum) clock frequency
2.3V to 3.6V single supply voltage
Dual input/output commands resulting in an
equivalent clock frequency of 150 MHz
– DUAL OUTPUT FAST READ command
– DUAL INPUT FAST PROGRAM command
• 16Mb Flash memory
– Uniform 4KB subsectors
– Uniform 64KB sectors
• Additional 64-byte user-lockable, one-time programmable (OTP) area
• Erase capability
– Subsector (4KB granularity)
– Sector (64KB granularity)
– Bulk erase (16Mb) in 15 s typical
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
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Products and specifications discussed herein are subject to change by Micron without notice.
M25PX16 Serial Flash Embedded Memory
Features
Contents
Functional Description ..................................................................................................................................... 5
Signal Descriptions ........................................................................................................................................... 8
Serial Peripheral Interface Modes ...................................................................................................................... 9
Operating Features ......................................................................................................................................... 11
Page Programming ..................................................................................................................................... 11
Dual Input Fast Program ............................................................................................................................. 11
Subsector Erase, Sector Erase, Bulk Erase ..................................................................................................... 11
Polling during a Write, Program, or Erase Cycle ............................................................................................ 11
Active Power, Standby Power, and Deep Power-Down .................................................................................. 11
Status Register ............................................................................................................................................ 12
Data Protection by Protocol ........................................................................................................................ 12
Software Data Protection ............................................................................................................................ 12
Hardware Data Protection .......................................................................................................................... 13
Hold Condition .......................................................................................................................................... 14
Memory Configuration and Block Diagram ...................................................................................................... 15
Memory Map – 16Mb Density ......................................................................................................................... 16
Command Set Overview ................................................................................................................................. 17
WRITE ENABLE .............................................................................................................................................. 19
WRITE DISABLE ............................................................................................................................................. 20
READ IDENTIFICATION ................................................................................................................................. 21
READ STATUS REGISTER ................................................................................................................................ 22
WIP Bit ...................................................................................................................................................... 23
WEL Bit ...................................................................................................................................................... 23
Block Protect Bits ....................................................................................................................................... 23
Top/Bottom Bit .......................................................................................................................................... 23
SRWD Bit ................................................................................................................................................... 23
WRITE STATUS REGISTER .............................................................................................................................. 24
READ DATA BYTES ......................................................................................................................................... 26
READ DATA BYTES at HIGHER SPEED ............................................................................................................ 27
DUAL OUTPUT FAST READ ............................................................................................................................ 28
READ LOCK REGISTER ................................................................................................................................... 29
READ OTP ...................................................................................................................................................... 30
PAGE PROGRAM ............................................................................................................................................ 31
DUAL INPUT FAST PROGRAM ........................................................................................................................ 32
PROGRAM OTP .............................................................................................................................................. 33
WRITE to LOCK REGISTER ............................................................................................................................. 35
SUBSECTOR ERASE ....................................................................................................................................... 36
SECTOR ERASE .............................................................................................................................................. 37
BULK ERASE .................................................................................................................................................. 38
DEEP POWER-DOWN ..................................................................................................................................... 39
RELEASE from DEEP POWER-DOWN .............................................................................................................. 40
Power-Up/Down and Supply Line Decoupling ................................................................................................. 41
Maximum Ratings and Operating Conditions .................................................................................................. 43
Electrical Characteristics ................................................................................................................................ 44
AC Characteristics .......................................................................................................................................... 45
Package Information ...................................................................................................................................... 51
Device Ordering Information .......................................................................................................................... 55
Revision History ............................................................................................................................................. 56
Rev. B – 3/2013 ........................................................................................................................................... 56
Rev. A – 11/2012 .......................................................................................................................................... 56
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M25PX16 Serial Flash Embedded Memory
Features
List of Figures
Figure 1: Logic Diagram ................................................................................................................................... 5
Figure 2: Pin Connections: VFQFPN, SO8N ...................................................................................................... 6
Figure 3: Pinout: 24-Ball BGA, 6x8mm .............................................................................................................. 7
Figure 4: Bus Master and Memory Devices on the SPI Bus ............................................................................... 10
Figure 5: SPI Modes ....................................................................................................................................... 10
Figure 6: Hold Condition Activation ............................................................................................................... 14
Figure 7: Block Diagram ................................................................................................................................ 15
Figure 8: WRITE ENABLE Command Sequence .............................................................................................. 19
Figure 9: WRITE DISABLE Command Sequence ............................................................................................. 20
Figure 10: READ IDENTIFICATION Command Sequence ................................................................................ 21
Figure 11: READ STATUS REGISTER Command Sequence .............................................................................. 22
Figure 12: Status Register Format ................................................................................................................... 22
Figure 13: WRITE STATUS REGISTER Command Sequence ............................................................................. 24
Figure 14: READ DATA BYTES Command Sequence ........................................................................................ 26
Figure 15: READ DATA BYTES at HIGHER SPEED Command Sequence ........................................................... 27
Figure 16: DUAL OUTPUT FAST READ Command Sequence ........................................................................... 28
Figure 17: READ LOCK REGISTER Command Sequence ................................................................................. 29
Figure 18: READ OTP Command Sequence .................................................................................................... 30
Figure 19: PAGE PROGRAM Command Sequence ........................................................................................... 31
Figure 20: DUAL INPUT FAST PROGRAM Command Sequence ....................................................................... 32
Figure 21: PROGRAM OTP Command Sequence ............................................................................................. 33
Figure 22: How to Permanently Lock the OTP Bytes ........................................................................................ 34
Figure 23: WRITE to LOCK REGISTER Instruction Sequence ........................................................................... 35
Figure 24: SUBSECTOR ERASE Command Sequence ...................................................................................... 36
Figure 25: SECTOR ERASE Command Sequence ............................................................................................. 37
Figure 26: BULK ERASE Command Sequence ................................................................................................. 38
Figure 27: DEEP POWER-DOWN Command Sequence ................................................................................... 39
Figure 28: RELEASE from DEEP POWER-DOWN Command Sequence ............................................................. 40
Figure 29: Power-Up Timing .......................................................................................................................... 42
Figure 30: AC Measurement I/O Waveform ..................................................................................................... 45
Figure 31: Serial Input Timing ........................................................................................................................ 48
Figure 32: Write Protect Setup and Hold During WRSR when SRWD = 1 Timing ............................................... 48
Figure 33: Hold Timing .................................................................................................................................. 49
Figure 34: Output Timing .............................................................................................................................. 49
Figure 35: V PPH Timing .................................................................................................................................. 50
Figure 36: VFQFPN8 (MLP8) 6mm x 5mm ...................................................................................................... 51
Figure 37: SO8W 208 mils Body Width ............................................................................................................ 52
Figure 38: SO8N 150 mils Body Width ............................................................................................................ 53
Figure 39: TBGA 24-Ball, 6mm x 8mm ............................................................................................................ 54
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M25PX16 Serial Flash Embedded Memory
Features
List of Tables
Table 1: Signal Descriptions ............................................................................................................................. 8
Table 2: SPI Modes .......................................................................................................................................... 9
Table 3: Software Protection Truth Table ........................................................................................................ 13
Table 4: Sectors 0 to 32, Protected Area Sizes – Upper Area Protection .............................................................. 13
Table 5: Sectors 0 to 32, Protected Area Sizes – Lower Area Protection .............................................................. 13
Table 6: Sectors 31:0 ...................................................................................................................................... 16
Table 7: Command Set Codes ........................................................................................................................ 18
Table 8: READ IDENTIFICATION Data Out Sequence ..................................................................................... 21
Table 9: Status Register Protection Modes ...................................................................................................... 25
Table 10: Lock Register Out ............................................................................................................................ 29
Table 11: Lock Register In .............................................................................................................................. 35
Table 12: Absolute Maximum Ratings ............................................................................................................. 43
Table 13: Operating Conditions ...................................................................................................................... 43
Table 14: Data Retention and Endurance ........................................................................................................ 43
Table 15: Power Up Timing Specifications ...................................................................................................... 44
Table 16: DC Current Specifications ............................................................................................................... 44
Table 17: DC Voltage Specifications ................................................................................................................ 44
Table 18: AC Measurement Conditions ........................................................................................................... 45
Table 19: Capacitance .................................................................................................................................... 45
Table 20: AC Specifications (75MHz) .............................................................................................................. 46
Table 21: Part Number Information Scheme ................................................................................................... 55
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M25PX16 Serial Flash Embedded Memory
Functional Description
Functional Description
The M25PX16 is a 16Mb (2Mb x 8) serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The device supports two
high-performance dual input/output instructions that double the transfer bandwidth
for read and program operations:
• DUAL OUTPUT FAST READ (DOFR) instruction reads data at up to 75MHz by using
both pin DQ1 and pin DQ0 as outputs.
• DUAL INPUT FAST PROGRAM (DIFP) instruction programs data at up to 75MHz by
using both pin DQ1 and pin DQ0 as inputs.
Note: 75MHz operation is available only in VCC range 2.7V–3.6V.
The memory can be programmed 1 to 256 bytes at a time, using the PAGE PROGRAM
instruction. It is organized as 32 sectors that are further divided into 16 subsectors each
(512 total subsectors).
The memory can be erased a 4KB subsector at a time, a 64KB sector at a time, or as a
whole. It can be write protected by software using a mix of volatile and non-volatile protection features, depending on the application needs. The protection granularity is of
64KB (sector granularity).
The M25PX16 has 64 one-time-programmable bytes (OTP bytes) that can be read and
programmed using two dedicated instructions, READ OTP and PROGRAM OTP, respectively. These 64 bytes can be locked permanently by a particular PROGRAM OTP sequence. Once they have been locked, they become read-only and this state cannot be
reverted.
Further features are available as additional security options. More information on these
security features is available, upon completion of an NDA (nondisclosure agreement),
and are, therefore, not described in this datasheet. For more details of this option contact your nearest Micron sales office.
Figure 1: Logic Diagram
VCC
DQ0
DQ1
C
S#
W#/VPP
HOLD#
VSS
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M25PX16 Serial Flash Embedded Memory
Functional Description
Signal Name
Function
Direction
C
Serial clock
Input
DQ0
Serial data input
(Serves as output during DUAL OUTPUT FAST READ operation)
I/O
DQ1
Serial data output
(Serves as input during DUAL INPUT FAST PROGRAM operation)
I/O
S#
Chip select
Input
W#/VPP
Write protect or enhanced program supply voltage
Input
HOLD#
Hold
Input
VCC
Supply voltage
VSS
Ground
Figure 2: Pin Connections: VFQFPN, SO8N
S#
1
8
VCC
DQ1
2
7
HOLD#
W#/VPP
3
6
C
VSS
4
5
DQ0
There is an exposed central pad on the underside of the VFQFPN package. This is pulled
internally to V SS, and must not be connected to any other voltage or signal line on the
PCB. The Package Mechanical section provides information on package dimensions
and how to identify pin 1.
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M25PX16 Serial Flash Embedded Memory
Functional Description
Figure 3: Pinout: 24-Ball BGA, 6x8mm
1
2
3
4
5
A
NC
NC
NC
NC
NC
C
VSS
VCC
NC
NC
S#
NC
W#/VPP
NC
NC
DQ1
DQ0
HOLD#
NC
NC
NC
NC
NC
NC
B
C
D
E
Note:
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1. DNU = do not use. NC = no connect.
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M25PX16 Serial Flash Embedded Memory
Signal Descriptions
Signal Descriptions
Table 1: Signal Descriptions
Signal
Type
DQ1
Output
Serial data: The DQ1 output signal is used to transfer data serially out of the device.
Data is shifted out on the falling edge of the serial clock (C). During the DUAL INPUT
FAST PROGRAM command, pin DQ1 is used as an input. It is latched on the rising edge
of C.
DQ0
Input
Serial data: The DQ0 input signal is used to transfer data serially into the device. It
receives commands, addresses, and the data to be programmed. Values are latched on
the rising edge of the serial clock (C). During the DUAL OUTPUT FAST READ command,
pin DQ0 is used as an output. Data is shifted out on the falling edge of C.
C
Input
Clock: The C input signal provides the timing of the serial interface. Commands, addresses, or data present at serial data input (DQ0) is latched on the rising edge of the
serial clock (C). Data on DQ1 changes after the falling edge of C.
S#
Input
Chip select: When the S# input signal is HIGH, the device is deselected and DQ1 is at
HIGH impedance. Unless an internal PROGRAM, ERASE, or WRITE STATUS REGISTER cycle is in progress, the device will be in the standby power mode (not the DEEP POWERDOWN mode). Driving S# LOW enables the device, placing it in the active power
mode. After power-up, a falling edge on S# is required prior to the start of any command.
HOLD#
Input
Hold: The HOLD# signal is used to pause any serial communications with the device
without deselecting the device. During the hold condition, DQ1 is High-Z. DQ0 and C
are "Don’t Care." To start the hold condition, the device must be selected, with S#
driven LOW.
W#/VPP
Input
Write protect/enhanced program supply voltage:The W#/VPP signal is both a control input and a power supply pin. The two functions are selected by the voltage
range applied to the pin. If the W#/VPP input is kept in a low voltage range (0 V to
VCC) the pin is seen as a control input. The W# input signal is used to freeze the size of
the area of memory that is protected against program or erase commands as specified
by the values in BP2, BP1, and BP0 bits of the Status Register. VPP acts as an additional
power supply if it is in the range of VPPH, as defined in the AC Measurement Conditions table. Avoid applying VPPH to the W#/VPP pin during a Bulk Erase operation.
VCC
Input
Device core power supply: Source voltage.
VSS
Input
Ground: Reference for the VCC supply voltage.
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Description
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M25PX16 Serial Flash Embedded Memory
Serial Peripheral Interface Modes
Serial Peripheral Interface Modes
The device can be driven by a microcontroller while its serial peripheral interface (SPI)
is in either of the two modes shown here. The difference between the two modes is the
clock polarity when the bus master is in standby mode and not transferring data. Input
data is latched in on the rising edge of the clock, and output data is available from the
falling edge of the clock.
Table 2: SPI Modes
SPI Modes
Clock Polarity
CPOL = 0, CPHA = 0
C remains at 0 for (CPOL = 0, CPHA = 0)
CPOL = 1, CPHA = 1
C remains at 1 for (CPOL = 1, CPHA = 1)
The following figure is an example of three memory devices in a simple connection to
an MCU on an SPI bus. Because only one device is selected at a time, that one device
drives DQ1, while the other devices are HIGH-Z.
Resistors ensure the device is not selected if the bus master leaves S# HIGH-Z. The bus
master might enter a state in which all input/output is HIGH-Z simultaneously, such as
when the bus master is reset. Therefore, the serial clock must be connected to an external pull-down resistor so that S# is pulled HIGH while the serial clock is pulled LOW.
This ensures that S# and the serial clock are not HIGH simultaneously and that tSHCH
is met. The typical resistor value of 100kΩ, assuming that the time constant R × Cp (Cp =
parasitic capacitance of the bus line), is shorter than the time the bus master leaves the
SPI bus in HIGH-Z.
Example: Cp = 50 pF, that is R × Cp = 5μs. The application must ensure that the bus
master never leaves the SPI bus HIGH-Z for a time period shorter than 5μs. W# and
HOLD# should be driven either HIGH or LOW, as appropriate.
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M25PX16 Serial Flash Embedded Memory
Serial Peripheral Interface Modes
Figure 4: Bus Master and Memory Devices on the SPI Bus
VSS
VCC
R
SDO
SPI interface:
(CPOL, CPHA) =
(0, 0) or (1, 1)
SDI
SCK
VCC
C
SPI bus master
DQ1 DQ0
R
CS3
SPI memory
device
VCC
C
VSS
R
DQ1
DQ0
SPI memory
device
VCC
C
VSS
R
DQ1 DQ0
VSS
SPI memory
device
CS2 CS1
S#
W# HOLD#
S#
W# HOLD#
S#
W# HOLD#
Figure 5: SPI Modes
CPOL CPHA
0
0
C
1
1
C
DQ0
MSB
DQ1
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M25PX16 Serial Flash Embedded Memory
Operating Features
Operating Features
Page Programming
To program one data byte, two commands are required: WRITE ENABLE, which is one
byte, and a PAGE PROGRAM sequence, which is four bytes plus data. This is followed by
the internal PROGRAM cycle of duration tPP. To spread this overhead, the PAGE PROGRAM command allows up to 256 bytes to be programmed at a time (changing bits
from 1 to 0), provided they lie in consecutive addresses on the same page of memory. To
optimize timings, it is recommended to use the PAGE PROGRAM command to program
all consecutive targeted bytes in a single sequence than to use several PAGE PROGRAM
sequences with each containing only a few bytes.
Dual Input Fast Program
The DUAL INPUT FAST PROGRAM command makes it possible to program up to 256
bytes using two input pins at the same time (by changing bits from 1 to 0). For optimized timings, it is recommended to use the DUAL INPUT FAST PROGRAM command
to program all consecutive targeted bytes in a single sequence than to use several DUAL
INPUT FAST PROGRAM sequences each containing only a few bytes.
Subsector Erase, Sector Erase, Bulk Erase
The PAGE PROGRAM command allows bits to be reset from 1 to 0. Before this can be
applied, the bytes of memory need to have been erased to all 1s (FFh). This can be achieved a subsector at a time using the SUBSECTOR ERASE command, a sector at a time
using the SECTOR ERASE command, or throughout the entire memory using the BULK
ERASE command. This starts an internal ERASE cycle of duration t SSE, tSE or tBE. The
ERASE command must be preceded by a WRITE ENABLE command.
Polling during a Write, Program, or Erase Cycle
An improvement in the time to complete the following commands can be achieved by
not waiting for the worst case delay (tW, tPP, tSSE, tSE, or tBE).
•
•
•
•
•
WRITE STATUS REGISTER
PROGRAM OTP
PROGRAM
DUAL INPUT FAST PROGRAM
ERASE (SUBSECTOR ERASE, SECTOR ERASE, BULK ERASE)
The write in progress (WIP) bit is provided in the status register so that the application
program can monitor this bit in the status register, polling it to establish when the previous WRITE cycle, PROGRAM cycle, or ERASE cycle is complete.
Active Power, Standby Power, and Deep Power-Down
When chip select (S#) is LOW, the device is selected, and in the ACTIVE POWER mode.
When S# is HIGH, the device is deselected, but could remain in the ACTIVE POWER
mode until all internal cycles have completed (PROGRAM, ERASE, WRITE STATUS
REGISTER). The device then goes in to the STANDBY POWER mode. The device consumption drops to ICC1.
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M25PX16 Serial Flash Embedded Memory
Operating Features
The DEEP POWER-DOWN mode is entered when the DEEP POWER-DOWN command
is executed. The device consumption drops further to I CC2. The device remains in this
mode until the RELEASE FROM DEEP POWER-DOWN command is executed. While in
the DEEP POWER-DOWN mode, the device ignores all WRITE, PROGRAM, and ERASE
commands. This provides an extra software protection mechanism when the device is
not in active use, by protecting the device from inadvertent WRITE, PROGRAM, or
ERASE operations. For further information, see DEEP POWER-DOWN (page 39).
Status Register
The status register contains a number of status and control bits that can be read or set
(as appropriate) by specific commands. For a detailed description of the status register
bits, see READ STATUS REGISTER (page 22).
Data Protection by Protocol
Non-volatile memory is used in environments that can include excessive noise. The following capabilities help protect data in these noisy environments.
Power on reset and an internal timer (tPUW) can provide protection against inadvertent
changes while the power supply is outside the operating specification.
PROGRAM, ERASE, and WRITE STATUS REGISTER commands are checked before they
are accepted for execution to ensure they consist of a number of clock pulses that is a
multiple of eight.
All commands that modify data must be preceded by a WRITE ENABLE command to set
the write enable latch (WEL) bit.
In addition to the low power consumption feature, the DEEP POWER-DOWN mode offers extra software protection since all WRITE, PROGRAM, and ERASE commands are
ignored when the device is in this mode.
Software Data Protection
Memory can be configured as read-only using the top/bottom bit and the block protect
bits (BP2, BP1, BP0) as shown in the Protected Area Sizes table.
Memory sectors can be protected by specific lock registers assigned to each 64KB sector. These lock registers can be read and written using the READ LOCK REGISTER and
WRITE to LOCK REGISTER commands. In each lock register the following two bits control the protection of each sector:
• Write lock bit: This bit determines whether the contents of the sector can be modified
using the WRITE, PROGRAM, and ERASE commands. When the bit is set to ‘1’, the
sector is write protected, and any operations that attempt to change the data in the
sector will fail. When the bit is reset to ‘0’, the sector is not write protected by the lock
register, and may be modified.
• Lock down bit: This bit provides a mechanism for protecting software data from simple hacking and malicious attack. When the bit is set to '1’, further modification to the
write lock bit and lock down bit cannot be performed. A power-up, is required before
changes to these bits can be made. When the bit is reset to ‘0’, the write lock bit and
lock down bit can be changed.
The software protection truth table shows the lock down bit and write lock bit settings
and the sector protection status.
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M25PX16 Serial Flash Embedded Memory
Operating Features
Table 3: Software Protection Truth Table
Sector Lock Register
Bits
Lock Down
Write Lock
Protection Status
0
0
Sector unprotected from PROGRAM / ERASE / WRITE operations; protection status reversible
0
1
Sector protected from PROGRAM / ERASE / WRITE operations; protection status reversible
1
0
Sector unprotected from PROGRAM / ERASE / WRITE operations; protection status cannot be
changed except by a power-up.
1
1
Sector protected from PROGRAM / ERASE / WRITE operations; protection status cannot be
changed except by a power-up.
Hardware Data Protection
Hardware data protection is implemented using the write protect signal applied on the
W#/VPP pin. This freezes the status register in a read-only mode, protecting the block
protect (BP) bits and the status register write disable bit (SRWD). The device is ready to
accept a BULK ERASE command only if all block protect bits are 0.
Table 4: Sectors 0 to 32, Protected Area Sizes – Upper Area Protection
Status Register Content
Memory Content
Top/Bottom Bit
BP 2
BP 1
BP 0
Protected Area
Unprotected Area
0
0
0
0
none
All sectors 1
0
0
0
1
Upper 32nd (sector 31)
Lower 31/32nds (sectors 0 to 30)
0
0
1
0
Upper 16th (sectors 30 to 31)
Lower 15/16ths (sectors 0 to 29)
0
0
1
1
Upper 8th (sectors 28 to 31)
Lower 7/8ths (sectors 0 to 27)
0
1
0
0
Upper 4th (sectors 24 to 31)
Lower 3/4ths (sectors 0 to 23)
0
1
0
1
Upper half (sectors 16 to 31)
Lower half (sectors 0 to 15)
0
1
1
0
All sectors
none
0
1
1
1
All sectors
none
Note:
1. The device is ready to accept a BULK ERASE command only if all block protect bits are 0.
Table 5: Sectors 0 to 32, Protected Area Sizes – Lower Area Protection
Status Register Content
Memory Content
Top/Bottom Bit
BP 2
BP 1
BP 0
Protected Area
Unprotected Area
1
0
0
0
none
All sectors 1
1
0
0
1
Lower 32nd (sector 0)
Upper 31/32nds (sectors 1 to 31)
1
0
1
0
Lower 16th (sectors 0 to 1)
Upper 15/16ths (sectors 2 to 31)
1
0
1
1
Lower 8th (sectors 0 to 3)
Upper 7/8ths (sectors 4 to 31)
1
1
0
0
Lower 4th (sectors 0 to 7)
Upper 3/4ths (sectors 8 to 31)
1
1
0
1
Lower half (sectors 0 to 15)
Upper half (sectors 16 to 31)
1
1
1
0
All sectors
none
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M25PX16 Serial Flash Embedded Memory
Operating Features
Table 5: Sectors 0 to 32, Protected Area Sizes – Lower Area Protection (Continued)
Status Register Content
Memory Content
Top/Bottom Bit
BP 2
BP 1
BP 0
1
1
1
1
Note:
Protected Area
Unprotected Area
All sectors
none
1. The device is ready to accept a BULK ERASE command only if all block protect bits are 0.
Hold Condition
The HOLD# signal is used to pause any serial communications with the device without
resetting the clocking sequence. However, taking this signal LOW does not terminate
any WRITE STATUS REGISTER, PROGRAM, or ERASE cycle that is currently in progress.
To enter the hold condition, the device must be selected, with S# LOW. The hold condition starts on the falling edge of the HOLD# signal, if this coincides with serial clock (C)
being LOW. The hold condition ends on the rising edge of the HOLD# signal, if this coincides with C being LOW. If the falling edge does not coincide with C being LOW, the
hold condition starts after C next goes LOW. Similarly, if the rising edge does not coincide with C being LOW, the hold condition ends after C next goes LOW.
During the hold condition, DQ1 is HIGH impedance while DQ0 and C are Don’t Care.
Typically, the device remains selected with S# driven LOW for the duration of the hold
condition. This ensures that the state of the internal logic remains unchanged from the
moment of entering the hold condition. If S# goes HIGH while the device is in the hold
condition, the internal logic of the device is reset. To restart communication with the
device, it is necessary to drive HOLD# HIGH, and then to drive S# LOW. This prevents
the device from going back to the hold condition.
Figure 6: Hold Condition Activation
C
HOLD#
HOLD condition (standard use)
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HOLD condition (nonstandard use)
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M25PX16 Serial Flash Embedded Memory
Memory Configuration and Block Diagram
Memory Configuration and Block Diagram
Each page of memory can be individually programmed; bits are programmed from 1 to
0. The device is sector or bulk-erasable, but not page-erasable; bits are erased from 0 to
1. The memory is configured as follows:
•
•
•
•
•
2,097,152 bytes (8 bits each)
512 subsectors (4KB each)
32 sectors (64KB each)
8,192 pages (256 bytes each)
64 OTP bytes located outside main memory
Figure 7: Block Diagram
HOLD#
W#/VPP
High Voltage
Generator
Control Logic
64 OTP bytes
S#
C
DQ0
I/O Shift Register
DQ1
Address Register
and Counter
Status
Register
256 Byte
Data Buffer
Y Decoder
1FFFFFh
00000h
000FFh
256 bytes (page size)
X Decoder
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M25PX16 Serial Flash Embedded Memory
Memory Map – 16Mb Density
Memory Map – 16Mb Density
Table 6: Sectors 31:0
Address Range
Sector
Subsector
31
511
001F F000
001F FFFF
510
001F E000
001F EFFF
509
001F D000
001F DFFF
⋮
⋮
⋮
498
001F 2000
001F 2FFF
497
001F 1000
001F 1FFF
496
001F 0000
001F 0FFF
495
001E F000
001E FFFF
30
Start
End
494
001E E000
001E EFFF
493
001E D000
001E DFFF
⋮
⋮
⋮
482
001E 2000
001E 2FFF
481
001E 1000
001E 1FFF
480
001E 0000
001E 0FFF
⋮
⋮
⋮
⋮
1
31
0001 F000
0001 FFFF
0
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0001 E000
0001 EFFF
29
0001 D000
0001 DFFF
⋮
⋮
⋮
18
0001 2000
0001 2FFF
17
0001 1000
0001 1FFF
16
0001 0000
0001 0FFF
15
0000 F000
0000 FFFF
14
0000 E000
0000 EFFF
13
0000 D000
0000 DFFF
⋮
⋮
⋮
2
0000 2000
0000 2FFF
1
0000 1000
0000 1FFF
0
0000 0000
0000 0FFF
16
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M25PX16 Serial Flash Embedded Memory
Command Set Overview
Command Set Overview
All commands, addresses, and data are shifted in and out of the device, most significant
bit first.
Serial data inputs DQ0 and DQ1 are sampled on the first rising edge of serial clock (C)
after chip select (S#) is driven LOW. Then, the one-byte command code must be shifted
in to the device, most significant bit first, on DQ0 and DQ1, each bit being latched on
the rising edges of C.
Every command sequence starts with a one-byte command code. Depending on the
command, this command code might be followed by address or data bytes, by address
and data bytes, or by neither address or data bytes. For the following commands, the
shifted-in command sequence is followed by a data-out sequence. S# can be driven
HIGH after any bit of the data-out sequence is being shifted out.
•
•
•
•
•
•
•
•
READ DATA BYTES (READ)
READ DATA BYTES at HIGHER SPEED
DUAL OUTPUT FAST READ
READ OTP
READ LOCK REGISTERS
READ STATUS REGISTER
READ IDENTIFICATION
RELEASE from DEEP POWER-DOWN
For the following commands, S# must be driven HIGH exactly at a byte boundary. That
is, after an exact multiple of eight clock pulses following S# being driven LOW, S# must
be driven HIGH. Otherwise, the command is rejected and not executed.
•
•
•
•
•
•
•
•
•
•
•
PAGE PROGRAM
PROGRAM OTP
DUAL INPUT FAST PROGRAM
SUBSECTOR ERASE
SECTOR ERASE
BULK ERASE
WRITE STATUS REGISTER
WRITE to LOCK REGISTER
WRITE ENABLE
WRITE DISABLE
DEEP POWER-DOWN
All attempts to access the memory array are ignored during a WRITE STATUS REGISTER
command cycle, a PROGRAM command cycle, or an ERASE command cycle. In addition, the internal cycle for each of these commands continues unaffected.
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M25PX16 Serial Flash Embedded Memory
Command Set Overview
Table 7: Command Set Codes
Command Name
Bytes
One-Byte
Command Code
Address
Dummy
Data
WRITE ENABLE
0000
0110
06h
0
0
0
WRITE DISABLE
0000
0100
04h
0
0
0
READ IDENTIFICATION
1001
1111
9Fh
0
0
1 to 20
1001
1110
9Eh
READ STATUS REGISTER
0000
0101
05h
0
0
1 to ∞
WRITE STATUS REGISTER
0000
0001
01h
0
0
1
WRITE to LOCK REGISTER
1110
0101
E5h
3
0
1
READ LOCK REGISTER
1110
1000
E8h
3
0
1
READ DATA BYTES
0000
0011
03h
3
0
1 to ∞
READ DATA BYTES at HIGHER SPEED
0000
1011
0Bh
3
1
1 to ∞
DUAL OUTPUT FAST READ
0011
1011
3Bh
3
1
1 to ∞
READ OTP (Read 64 bytes of OTP area)
0100
1011
4Bh
3
1
1 to 65
PROGRAM OTP (Program 64 bytes of OTP
area)
0100
0010
42h
3
0
1 to 65
PAGE PROGRAM
0000
0010
02h
3
0
1 to 256
DUAL INPUT FAST PROGRAM
1010
0010
A2h
3
0
1 to 256
SUBSECTOR ERASE
0010
0000
20h
3
0
0
SECTOR ERASE
1101
1000
D8h
3
0
0
BULK ERASE
1100
0111
C7h
0
0
0
DEEP POWER-DOWN
1011
1001
B9h
0
0
0
RELEASE from DEEP POWER-DOWN
1010
1011
ABh
0
0
0
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M25PX16 Serial Flash Embedded Memory
WRITE ENABLE
WRITE ENABLE
The WRITE ENABLE command sets the write enable latch (WEL) bit.
The WEL bit must be set before execution of every PROGRAM, ERASE, and WRITE command.
The WRITE ENABLE command is entered by driving chip select (S#) LOW, sending the
command code, and then driving S# HIGH.
Figure 8: WRITE ENABLE Command Sequence
0
1
2
3
4
5
6
7
C
S#
Command Bits
DQ[0]
0
0
0
0
0
LSB
1
1
0
MSB
DQ1
High-Z
Don’t Care
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M25PX16 Serial Flash Embedded Memory
WRITE DISABLE
WRITE DISABLE
The WRITE DISABLE command resets the write enable latch (WEL) bit.
The WRITE DISABLE command is entered by driving chip select (S#) LOW, sending the
command code, and then driving S# HIGH.
The WEL bit is reset under the following conditions:
•
•
•
•
•
Power-up
Completion of any ERASE operation
Completion of any PROGRAM operation
Completion of any WRITE REGISTER operation
Completion of WRITE DISABLE operation
Figure 9: WRITE DISABLE Command Sequence
0
1
2
3
4
5
6
7
C
S#
Command Bits
DQ[0]
0
0
0
0
0
LSB
1
0
0
MSB
DQ1
High-Z
Don’t Care
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M25PX16 Serial Flash Embedded Memory
READ IDENTIFICATION
READ IDENTIFICATION
The READ IDENTIFICATION command reads the following device identification data:
• Manufacturer identification (1 byte): This is assigned by JEDEC.
• Device identification (2 bytes): This is assigned by device manufacturer; the first byte
indicates memory type and the second byte indicates device memory capacity.
• A Unique ID code (UID) (17 bytes,16 available upon customer request): The first byte
contains length of data to follow; the remaining 16 bytes contain optional Customized
Factory Data (CFD) content.
Table 8: READ IDENTIFICATION Data Out Sequence
Device Identification
UID
Manufacturer
Identification
Memory Type
Memory Capacity
CFD Length
CFD Content
20h
71h
15h
10h
16 bytes
1. The CFD bytes are read-only and can be programmed with customer data upon demand.
If customers do not make requests, the devices are shipped with all the CFD bytes programmed to zero.
Note:
A READ IDENTIFICATION command is not decoded while an ERASE or PROGRAM cycle is in progress and has no effect on a cycle in progress. The READ IDENTIFICATION
command must not be issued while the device is in DEEP POWER-DOWN mode.
The device is first selected by driving S# LOW. Then the 8-bit command code is shifted
in and content is shifted out on DQ1 as follows: the 24-bit device identification that is
stored in the memory, the 8-bit CFD length, followed by 16 bytes of CFD content. Each
bit is shifted out during the falling edge of serial clock (C).
The READ IDENTIFICATION command is terminated by driving S# HIGH at any time
during data output. When S# is driven HIGH, the device is put in the STANDBY POWER
mode and waits to be selected so that it can receive, decode, and execute commands.
Figure 10: READ IDENTIFICATION Command Sequence
0
7
16
15
8
31
32
C
LSB
Command
DQ0
MSB
LSB
LSB
DQ1
High-Z
DOUT
DOUT
DOUT
MSB
DOUT
MSB
Manufacturer
identification
LSB
DOUT
DOUT
MSB
Device
identification
UID
Don’t Care
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M25PX16 Serial Flash Embedded Memory
READ STATUS REGISTER
READ STATUS REGISTER
The READ STATUS REGISTER command allows the status register to be read. The status
register may be read at any time, even while a PROGRAM, ERASE, or WRITE STATUS
REGISTER cycle is in progress. When one of these cycles is in progress, it is recommended to check the write in progress (WIP) bit before sending a new command to the device. It is also possible to read the status register continuously.
Figure 11: READ STATUS REGISTER Command Sequence
0
7
8
9
10
11
12
13
14
15
C
LSB
Command
DQ0
MSB
LSB
DQ1
DOUT
High-Z
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
MSB
Don’t Care
Figure 12: Status Register Format
b7
SRWD
b0
0
BP2
TB
BP1
BP0
WEL
WIP
Status register write protect
Top/bottom bit
Block protect bits
Write enable latch bit
Write in progress bit
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M25PX16 Serial Flash Embedded Memory
READ STATUS REGISTER
WIP Bit
The write in progress (WIP) bit indicates whether the memory is busy with a WRITE
STATUS REGISTER cycle, a PROGRAM cycle, or an ERASE cycle. When the WIP bit is set
to 1, a cycle is in progress; when the WIP bit is set to 0, a cycle is not in progress.
WEL Bit
The write enable latch (WEL) bit indicates the status of the internal write enable latch.
When the WEL bit is set to 1, the internal write enable latch is set; when the WEL bit is
set to 0, the internal write enable latch is reset and no WRITE STATUS REGISTER, PROGRAM, or ERASE command is accepted.
Block Protect Bits
The block protect bits are non-volatile. They define the size of the area to be software
protected against PROGRAM and ERASE commands. The block protect bits are written
with the WRITE STATUS REGISTER command.
When one or more of the block protect bits is set to 1, the relevant memory area, as defined in the Protected Area Sizes table, becomes protected against PAGE PROGRAM and
SECTOR ERASE commands. The block protect bits can be written provided that the
HARDWARE PROTECTED mode has not been set. The BULK ERASE command is executed only if all block protect bits are 0.
Top/Bottom Bit
The top/bottom (TB) bit is non-volatile. It can be set and reset with the WRITE STATUS
REGISTER command provided that the WRITE ENABLE command has been issued. The
TB bit is used in conjunction with the block protect bits to determine if the protected
area defined by the block protect bits starts from the top or the bottom of the memory
array:
• When TB is reset to 0 (default value), the area protected by the block protect bits starts
from the top of the memory array
• When TB is set to 1, the area protected by the block protect bits starts from the bottom of the memory array
The TB bit cannot be written when the status register write disable (SRWD) bit is set to 1
and the W# pin is driven LOW. For further information, see on page
SRWD Bit
The status register write disable (SRWD) bit is operated in conjunction with the write
protect (W#/VPP) signal. When the SRWD bit is set to 1 and W#/V PP is driven LOW, the
device is put in the hardware protected mode. In the hardware protected mode, the
non-volatile bits of the status register (SRWD, and the block protect bits) become readonly bits and the WRITE STATUS REGISTER command is no longer accepted for execution.
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M25PX16 Serial Flash Embedded Memory
WRITE STATUS REGISTER
WRITE STATUS REGISTER
The WRITE STATUS REGISTER command allows new values to be written to the status
register. Before the WRITE STATUS REGISTER command can be accepted, a WRITE ENABLE command must have been executed previously. After the WRITE ENABLE command has been decoded and executed, the device sets the write enable latch (WEL) bit.
The WRITE STATUS REGISTER command is entered by driving chip select (S#) LOW,
followed by the command code and the data byte on serial data input (DQ0). The
WRITE STATUS REGISTER command has no effect on b6, b1 and b0 of the status register. The status register b6 is always read as ‘0’. S# must be driven HIGH after the eighth
bit of the data byte has been latched in. If not, the WRITE STATUS REGISTER command
is not executed.
Figure 13: WRITE STATUS REGISTER Command Sequence
0
7
8
9
10
11
12
13
15
14
C
LSB
Command
DQ0
MSB
LSB
DIN
DIN
DIN
DIN
DIN
DIN
DIN
DIN
DIN
MSB
As soon as S# is driven HIGH, the self-timed WRITE STATUS REGISTER cycle is initiated; its duration is tW. While the WRITE STATUS REGISTER cycle is in progress, the status register may still be read to check the value of the write in progress (WIP) bit. The
WIP bit is 1 during the self-timed WRITE STATUS REGISTER cycle, and is 0 when the
cycle is completed. Also, when the cycle is completed, the WEL bit is reset.
The WRITE STATUS REGISTER command allows the user to change the values of the
block protect bits (BP2, BP1, BP0). Setting these bit values defines the size of the area
that is to be treated as read-only, as defined in the Protected Area Sizes table.
The WRITE STATUS REGISTER command also allows the user to set and reset the status
register write disable (SRWD) bit in accordance with the write protect (W#/VPP) signal.
The SRWD bit and the W#/V PP signal allow the device to be put in the HARDWARE PROTECTED (HPM) mode. The WRITE STATUS REGISTER command is not executed once
the HPM is entered. The options for enabling the status register protection modes are
summarized here.
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M25PX16 Serial Flash Embedded Memory
WRITE STATUS REGISTER
Table 9: Status Register Protection Modes
Memory Content
W#/VPP
Signal
SRWD
Bit
1
0
0
0
1
1
0
1
Protection
Mode (PM)
Status Register
Write Protection
Protected
Area
Unprotected
Area
Notes
SOFTWARE
PROTECTED mode
(SPM)
Software protection
Commands not
accepted
Commands
accepted
1, 2, 3
HARDWARE
PROTECTED mode
(HPM)
Hardware protection
Commands not
accepted
Commands
accepted
3, 4, 5,
Notes:
1. Software protection: status register is writable (SRWD, BP2, BP1, and BP0 bit values can
be changed) if the WRITE ENABLE command has set the WEL bit.
2. PAGE PROGRAM, SECTOR ERASE, AND BULK ERASE commands are not accepted.
3. PAGE PROGRAM and SECTOR ERASE commands can be accepted.
4. Hardware protection: status register is not writable (SRWD, BP2, BP1, and BP0 bit values
cannot be changed).
5. PAGE PROGRAM, SECTOR ERASE, AND BULK ERASE commands are not accepted.
When the SRWD bit of the status register is 0 (its initial delivery state), it is possible to
write to the status register provided that the WEL bit has been set previously by a WRITE
ENABLE command, regardless of whether the W#/V PP signal is driven HIGH or LOW.
When the status register SRWD bit is set to 1, two cases need to be considered depending on the state of the W#/V PP signal:
• If the W#/V PP signal is driven HIGH, it is possible to write to the status register provided that the WEL bit has been set previously by a WRITE ENABLE command.
• If the W#/V PP signal is driven LOW, it is not possible to write to the status register even
if the WEL bit has been set previously by a WRITE ENABLE command. Therefore, attempts to write to the status register are rejected, and are not accepted for execution.
The result is that all the data bytes in the memory area that have been put in SPM by
the status register block protect bits (BP2, BP1, BP0) are also hardware protected
against data modification.
Regardless of the order of the two events, the HPM can be entered in either of the following ways:
• Setting the status register SRWD bit after driving the W#/V PP signal LOW
• Driving the W#/V PP signal LOW after setting the status register SRWD bit.
The only way to exit the HPM is to pull the W#/V PP signal HIGH. If the W#/V PP signal is
permanently tied HIGH, the HPM can never be activated. In this case, only the SPM is
available, using the status register block protect bits (BP2, BP1, BP0).
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M25PX16 Serial Flash Embedded Memory
READ DATA BYTES
READ DATA BYTES
The device is first selected by driving chip select (S#) LOW. The command code for
READ DATA BYTES is followed by a 3-byte address (A23-A0), each bit being latched-in
during the rising edge of serial clock (C). Then the memory contents at that address is
shifted out on serial data output (DQ1), each bit being shifted out at a maximum frequency fR during the falling edge of C.
The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Therefore, the entire
memory can be read with a single READ DATA BYTES command. When the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence
to be continued indefinitely.
The READ DATA BYTES command is terminated by driving S# HIGH. S# can be driven
HIGH at any time during data output. Any READ DATA BYTES command issued while
an ERASE, PROGRAM, or WRITE cycle is in progress is rejected without any effect on
the cycle that is in progress.
Figure 14: READ DATA BYTES Command Sequence
0
7
8
Cx
C
LSB
MSB
DQ1
A[MIN]
Command
DQ[0]
A[MAX]
DOUT
High-Z
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
LSB
DOUT
DOUT
MSB
Don’t Care
Note:
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1. Cx = 7 + (A[MAX] + 1).
26
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M25PX16 Serial Flash Embedded Memory
READ DATA BYTES at HIGHER SPEED
READ DATA BYTES at HIGHER SPEED
The device is first selected by driving chip select (S#) LOW. The command code for the
READ DATA BYTES at HIGHER SPEED command is followed by a 3-byte address (A23A0) and a dummy byte, each bit being latched-in during the rising edge of serial clock
(C). Then the memory contents at that address are shifted out on serial data output
(DQ1) at a maximum frequency fC, during the falling edge of C.
The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Therefore, the entire
memory can be read with a single READ DATA BYTES at HIGHER SPEED command.
When the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence to be continued indefinitely.
The READ DATA BYTES at HIGHER SPEED command is terminated by driving S# HIGH.
S# can be driven HIGH at any time during data output. Any READ DATA BYTES at
HIGHER SPEED command issued while an ERASE, PROGRAM, or WRITE cycle is in
progress is rejected without any effect on the cycle that is in progress.
Figure 15: READ DATA BYTES at HIGHER SPEED Command Sequence
0
7
8
Cx
C
LSB
A[MIN]
Command
DQ0
MSB
DQ1
A[MAX]
DOUT
High-Z
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
LSB
DOUT
DOUT
MSB
Dummy cycles
Note:
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Don’t Care
1. Cx = 7 + (A[MAX] + 1).
27
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M25PX16 Serial Flash Embedded Memory
DUAL OUTPUT FAST READ
DUAL OUTPUT FAST READ
The DUAL OUTPUT FAST READ command is similar to the READ DATA BYTES at
HIGHER SPEED command, except that data is shifted out on two pins (DQ0 and DQ1)
instead of one. Outputting the data on two pins doubles the data transfer bandwidth
compared to the READ DATA BYTES at HIGHER SPEED command.
The device is first selected by driving chip select S# LOW. The command code for the
DUAL OUTPUT FAST READ command is followed by a 3-byte address (A23-A0) and a
dummy byte, each bit being latched-in during the rising edge of serial clock (C). Then
the memory contents at that address are shifted out on DQ0 and DQ1 at a maximum
frequency fC, during the falling edge of C.
Figure 16: DUAL OUTPUT FAST READ Command Sequence
0
7
8
Cx
C
LSB
A[MIN]
Command
DQ0
MSB
DQ1
DOUT
DOUT
DOUT
LSB
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
A[MAX]
High-Z
DOUT
MSB
Dummy cycles
Note:
1. Cx = 7 + (A[MAX] + 1).
The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out on DQ0 and DQ1.
Therefore, the entire memory can be read with a single DUAL OUTPUT FAST READ
command. When the highest address is reached, the address counter rolls over to 00
0000h so that the read sequence can be continued indefinitely.
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M25PX16 Serial Flash Embedded Memory
READ LOCK REGISTER
READ LOCK REGISTER
The device is first selected by driving chip select (S#) LOW. The command code for the
READ LOCK REGISTER command is followed by a 3-byte address (A23-A0) pointing to
any location inside the concerned sector. Each address bit is latched-in during the rising edge of serial clock (C). Then the value of the lock register is shifted out on serial
data output (DQ1), each bit being shifted out at a maximum frequency fC during the
falling edge of C.
The READ LOCK REGISTER command is terminated by driving S# HIGH at any time
during data output.
Figure 17: READ LOCK REGISTER Command Sequence
0
7
8
Cx
C
LSB
MSB
DQ1
A[MIN]
Command
DQ[0]
A[MAX]
DOUT
High-Z
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
LSB
DOUT
DOUT
MSB
Don’t Care
Note:
1. Cx = 7 + (A[MAX] + 1).
Any READ LOCK REGISTER command issued while an ERASE, PROGRAM, or WRITE
cycle is in progress is rejected without any effect on the cycle that is in progress.
Values of b1 and b0 after power-up are defined in Power-Up/Down and Supply Line Decoupling (page 41).
Table 10: Lock Register Out
Bit
b7-b2
b1
b0
Bit name
Value
Function
1
The write lock and lock-down bits cannot be changed. Once a value of 1 is written to the lock-down bit, it cannot be cleared to a value of 0 except by a powerup.
0
The write lock and lock-down bits can be changed by writing new values to
them.
1
WRITE, PROGRAM, and ERASE operations in this sector will not be executed. The
memory contents will not be changed.
0
WRITE, PROGRAM, or ERASE operations in this sector are executed and will
modify the sector contents.
Reserved
Sector lock down
Sector write lock
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M25PX16 Serial Flash Embedded Memory
READ OTP
READ OTP
The device is first selected by driving chip select (S#) LOW. The command code for the
READ OTP (one-time programmable) command is followed by a 3-byte address (A23A0) and a dummy byte. Each bit is latched in on the rising edge of serial clock (C). Then
the memory contents at that address are shifted out on serial data output (DQ1). Each
bit is shifted out at the maximum frequency fCmax on the falling edge of C. The address
is automatically incremented to the next higher address after each byte of data is shifted
out.
There is no rollover mechanism with the READ OTP command. This means that the
READ OTP command must be sent with a maximum of 65 bytes to read because once
the 65th byte has been read, the same 65th byte continues to be read on the DQ1 pin.
The READ OTP command is terminated by driving S# HIGH. S# can be driven HIGH at
any time during data output. Any READ OTP command issued while an ERASE, PROGRAM, or WRITE cycle is in progress is rejected without having any effect on the cycle
that is in progress.
Figure 18: READ OTP Command Sequence
0
7
8
Cx
C
LSB
A[MIN]
Command
DQ0
MSB
DQ1
A[MAX]
DOUT
High-Z
DOUT
DOUT
DOUT
DOUT
DOUT
DOUT
LSB
DOUT
DOUT
MSB
Dummy cycles
Note:
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Don’t Care
1. Cx = 7 + (A[MAX] + 1).
30
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M25PX16 Serial Flash Embedded Memory
PAGE PROGRAM
PAGE PROGRAM
The PAGE PROGRAM command allows bytes in the memory to be programmed, which
means the bits are changed from 1 to 0. Before a PAGE PROGRAM command can be accepted a WRITE ENABLE command must be executed. After the WRITE ENABLE command has been decoded, the device sets the write enable latch (WEL) bit.
The PAGE PROGRAM command is entered by driving chip select (S#) LOW, followed by
the command code, three address bytes, and at least one data byte on serial data input
(DQ0).
If the eight least significant address bits (A7-A0) are not all zero, all transmitted data that
goes beyond the end of the current page are programmed from the start address of the
same page; that is, from the address whose eight least significant bits (A7-A0) are all
zero. S# must be driven LOW for the entire duration of the sequence.
If more than 256 bytes are sent to the device, previously latched data are discarded and
the last 256 data bytes are guaranteed to be programmed correctly within the same
page. If less than 256 data bytes are sent to device, they are correctly programmed at the
requested addresses without any effects on the other bytes of the same page.
For optimized timings, it is recommended to use the PAGE PROGRAM command to
program all consecutive targeted bytes in a single sequence rather than to use several
PAGE PROGRAM sequences, each containing only a few bytes.
S# must be driven HIGH after the eighth bit of the last data byte has been latched in.
Otherwise the PAGE PROGRAM command is not executed.
As soon as S# is driven HIGH, the self-timed PAGE PROGRAM cycle is initiated; the cycles's duration is tPP. While the PAGE PROGRAM cycle is in progress, the status register
may be read to check the value of the write in progress (WIP) bit. The WIP bit is 1 during
the self-timed PAGE PROGRAM cycle, and 0 when the cycle is completed. At some unspecified time before the cycle is completed, the write enable latch (WEL) bit is reset.
A PAGE PROGRAM command is not executed if it applies to a page protected by the
block protect bits BP2, BP1, and BP0.
Figure 19: PAGE PROGRAM Command Sequence
0
7
8
Cx
C
LSB
A[MIN]
LSB
DIN
Command
DQ[0]
MSB
A[MAX]
Note:
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DIN
DIN
DIN
DIN
DIN
DIN
DIN
DIN
MSB
1. Cx = 7 + (A[MAX] + 1).
31
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M25PX16 Serial Flash Embedded Memory
DUAL INPUT FAST PROGRAM
DUAL INPUT FAST PROGRAM
The DUAL INPUT FAST PROGRAM command is similar to the PAGE PROGRAM command, except that data is entered on two pins (DQ0 and DQ1) instead of one, doubling
the data transfer bandwidth.
The DUAL INPUT FAST PROGRAM command is entered by driving Chip Select S# LOW,
followed by the command code, three address bytes, and at least one data byte on serial
data input (DQ0).
If the eight least significant address bits (A7-A0) are not all zero, all transmitted data that
goes beyond the end of the current page is programmed from the start address of the
same page; that is, from the address whose eight least significant bits (A7-A0) are all
zero. S# must be driven LOW for the entire duration of the sequence.
If more than 256 bytes are sent to the device, previously latched data is discarded and
the last 256 data bytes are guaranteed to be programmed correctly within the same
page. If less than 256 data bytes are sent to device, they are correctly programmed at the
requested addresses without any effect on other bytes in the same page.
For optimized timings, it is recommended to use the DUAL INPUT FAST PROGRAM
command to program all consecutive targeted bytes in a single sequence than to use
several DUAL INPUT FAST PROGRAM sequences, each containing only a few bytes.
S# must be driven HIGH after the eighth bit of the last data byte has been latched in.
Otherwise the DUAL INPUT FAST PROGRAM command is not executed.
As soon as S# is driven HIGH, the self-timed PAGE PROGRAM cycle is initiated; the cycle's duration is tPP. While the DUAL INPUT FAST PROGRAM cycle is in progress, the
status register may be read to check the value of the write In progress (WIP) bit. The
WIP bit is 1 during the self-timed PAGE PROGRAM cycle, and 0 when the cycle is completed. At some unspecified time before the cycle is completed, the write enable latch
(WEL) bit is reset.
A DUAL INPUT FAST PROGRAM command is not executed if it applies to a page protected by the block protect bits BP2, BP1, and BP0.
Figure 20: DUAL INPUT FAST PROGRAM Command Sequence
0
7
8
Cx
C
LSB
DQ0
MSB
DQ1
A[MIN]
Command
LSB
DIN
DIN
DIN
DIN
DIN
DIN
DIN
DIN
DIN
DIN
A[MAX]
High-Z
MSB
Notes:
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1. For the M25PX16, the DUAL INPUT FAST PROGRAM command is available only in VCC
range 2.7 V - 3.6 V.
2. Cx = 7 + (A[MAX] + 1).
32
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M25PX16 Serial Flash Embedded Memory
PROGRAM OTP
PROGRAM OTP
The PROGRAM OTP command allows a maximum of 64 bytes in the OTP memory area
to be programmed, which means the bits are changed from 1 to 0. Before a PROGRAM
OTP command can be accepted, a WRITE ENABLE command must have been executed
previously. After the WRITE ENABLE command has been decoded, the device sets the
write enable latch (WEL) bit.
The PROGRAM OTP command is entered by driving chip select (S#) LOW, followed by
the command opcode, three address bytes, and at least one data byte on serial data input (DQ0).
S# must be driven HIGH after the eighth bit of the last data byte has been latched in.
Otherwise the PROGRAM OTP command is not executed.
There is no rollover mechanism with the PROGRAM OTP command. This means that
the PROGRAM OTP command must be sent with a maximum of 65 bytes to program.
When all 65 bytes have been latched in, any following byte will be discarded.
As soon as S# is driven HIGH, the self-timed PAGE PROGRAM cycle is initiated; the cycle's duration is tPP. While the PROGRAM OTP cycle is in progress, the status register
may be read to check the value of the write in progress (WIP) bit. The WIP bit is 1 during
the self-timed PROGRAM OTP cycle, and 0 when when the cycle is completed. At some
unspecified time before the cycle is complete, the WEL bit is reset.
Figure 21: PROGRAM OTP Command Sequence
0
7
8
Cx
C
LSB
A[MIN]
LSB
DIN
Command
DQ[0]
MSB
A[MAX]
Note:
DIN
DIN
DIN
DIN
DIN
DIN
DIN
DIN
MSB
1. Cx = 7 + (A[MAX] + 1).
The OTP control byte is byte 64. Bit 0 of this OTP control byte is used to permanently
lock the OTP memory array.
• When bit 0 of the OTP control byte = 1, the 64 bytes of the OTP memory array can be
programmed.
• When bit 0 of the OTP control byte = 0, the 64 bytes of the OTP memory array are
read-only and cannot be programmed anymore.
Once a bit of the OTP memory has been programmed to 0, it can no longer be set to 1.
Therefore, as soon as bit 0 of the control byte is set to 0, the 64 bytes of the OTP memory
array is set permanently as read-only.
Any PROGRAM OTP command issued while an ERASE, PROGRAM, or WRITE cycle is in
progress is rejected without any effect on the cycle that is in progress.
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M25PX16 Serial Flash Embedded Memory
PROGRAM OTP
Figure 22: How to Permanently Lock the OTP Bytes
64 data bytes
OTP control byte
byte byte byte
0
1
2
byte byte
63
64
X
X
X
X
X
X
X
bit 0
When bit 0 = 0
the 64 OTP bytes
become READ only
Bit 1 to bit 7 are NOT
programmable
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M25PX16 Serial Flash Embedded Memory
WRITE to LOCK REGISTER
WRITE to LOCK REGISTER
The WRITE to LOCK REGISTER instruction allows the lock register bits to be changed.
Before the WRITE to LOCK REGISTER instruction can be accepted, a WRITE ENABLE
instruction must have been executed previously. After the WRITE ENABLE instruction
has been decoded, the device sets the write enable latch (WEL) bit.
The WRITE to LOCK REGISTER instruction is entered by driving chip select (S#) LOW,
followed by the instruction code, three address bytes, and one data byte on serial data
input (DQ0). The address bytes must point to any address in the targeted sector. S#
must be driven HIGH after the eighth bit of the data byte has been latched in. Otherwise
the WRITE to LOCK REGISTER instruction is not executed.
Lock register bits are volatile, and therefore do not require time to be written. When the
WRITE to LOCK REGISTER instruction has been successfully executed, the WEL bit is
reset after a delay time of less than tSHSL minimum value.
Any WRITE to LOCK REGISTER instruction issued while an ERASE, PROGRAM, or
WRITE cycle is in progress is rejected without any effect on the cycle that is in progress.
Figure 23: WRITE to LOCK REGISTER Instruction Sequence
0
7
8
Cx
C
LSB
A[MIN]
LSB
DIN
Command
DQ[0]
MSB
A[MAX]
Note:
DIN
DIN
DIN
DIN
DIN
DIN
DIN
DIN
MSB
1. Cx = 7 + (A[MAX] + 1).
Table 11: Lock Register In
Sector
Bit
Value
All sectors
b7–b2
0
All sectors
b1
Sector lock-down bit value
All sectors
b0
Sector write lock bit value
Note: Values of b1 and b0 after power-up are defined in Power-Up/Down and Supply
Line Decoupling (page 41). For the sector lock down and sector write lock values, see
the Lock Register Out table in READ LOCK REGISTER (page 29).
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M25PX16 Serial Flash Embedded Memory
SUBSECTOR ERASE
SUBSECTOR ERASE
The SUBSECTOR ERASE command sets to 1 (FFh) all bits inside the chosen subsector.
Before the SUBSECTOR ERASE command can be accepted, a WRITE ENABLE command must have been executed previously. After the WRITE ENABLE command has
been decoded, the device sets the write enable latch (WEL) bit.
The SUBSECTOR ERASE command is entered by driving chip select (S#) LOW, followed
by the command code, and three address bytes on serial data input (DQ0). Any address
inside the subsector is a valid address for the SUBSECTOR ERASE command. S# must
be driven LOW for the entire duration of the sequence.
S# must be driven HIGH after the eighth bit of the last address byte has been latched in.
Otherwise the SUBSECTOR ERASE command is not executed. As soon as S# is driven
HIGH, the self-timed SUBSECTOR ERASE cycle is initiated; the cycle's duration is tSSE.
While the SUBSECTOR ERASE cycle is in progress, the status register may be read to
check the value of the write in progress (WIP) bit. The WIP bit is 1 during the self-timed
SUBSECTOR ERASE cycle, and is 0 when the cycle is completed. At some unspecified
time before the cycle is complete, the WEL bit is reset.
A SUBSECTOR ERASE command issued to a sector that is hardware or software protected is not executed.
Any SUBSECTOR ERASE command issued while an ERASE, PROGRAM, or WRITE cycle
is in progress is rejected without any effect on the cycle that is in progress.
Figure 24: SUBSECTOR ERASE Command Sequence
0
7
8
Cx
C
LSB
DQ0
MSB
Note:
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A[MIN]
Command
A[MAX]
1. Cx = 7 + (A[MAX] + 1).
36
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M25PX16 Serial Flash Embedded Memory
SECTOR ERASE
SECTOR ERASE
The SECTOR ERASE command sets to 1 (FFh) all bits inside the chosen sector. Before
the SECTOR ERASE command can be accepted, a WRITE ENABLE command must have
been executed previously. After the WRITE ENABLE command has been decoded, the
device sets the write enable latch (WEL) bit.
The SECTOR ERASE command is entered by driving chip select (S#) LOW, followed by
the command code, and three address bytes on serial data input (DQ0). Any address inside the sector is a valid address for the SECTOR ERASE command. S# must be driven
LOW for the entire duration of the sequence.
S# must be driven HIGH after the eighth bit of the last address byte has been latched in.
Otherwise the SECTOR ERASE command is not executed. As soon as S# is driven HIGH,
the self-timed SECTOR ERASE cycle is initiated; the cycle's duration is tSE. While the
SECTOR ERASE cycle is in progress, the status register may be read to check the value of
the write in progress (WIP) bit. The WIP bit is 1 during the self-timed SECTOR ERASE
cycle, and is 0 when the cycle is completed. At some unspecified time before the cycle is
completed, the WEL bit is reset.
A SECTOR ERASE command is not executed if it applies to a sector that is hardware or
software protected.
Figure 25: SECTOR ERASE Command Sequence
0
7
8
Cx
C
LSB
DQ0
MSB
Note:
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A[MIN]
Command
A[MAX]
1. Cx = 7 + (A[MAX] + 1).
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M25PX16 Serial Flash Embedded Memory
BULK ERASE
BULK ERASE
The BULK ERASE command sets all bits to 1 (FFh). Before the BULK ERASE command
can be accepted, a WRITE ENABLE command must have been executed previously. After the WRITE ENABLE command has been decoded, the device sets the write enable
latch (WEL) bit.
The BULK ERASE command is entered by driving chip select (S#) LOW, followed by the
command code on serial data input (DQ0). S# must be driven LOW for the entire duration of the sequence.
S# must be driven HIGH after the eighth bit of the command code has been latched in.
Otherwise the BULK ERASE command is not executed. As soon as S# is driven HIGH,
the self-timed BULK ERASE cycle is initiated; the cycle's duration is tBE. While the BULK
ERASE cycle is in progress, the status register may be read to check the value of the write
In progress (WIP) bit. The WIP bit is 1 during the self-timed BULK ERASE cycle, and is 0
when the cycle is completed. At some unspecified time before the cycle is completed,
the WEL bit is reset.
The BULK ERASE command is executed only if all block protect (BP2, BP1, BP0) bits are
0. The BULK ERASE command is ignored if one or more sectors are protected.
Figure 26: BULK ERASE Command Sequence
0
7
C
LSB
Command
DQ0
MSB
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M25PX16 Serial Flash Embedded Memory
DEEP POWER-DOWN
DEEP POWER-DOWN
Executing the DEEP POWER-DOWN command is the only way to put the device in the
lowest power consumption mode, the DEEP POWER-DOWN mode. The DEEP POWERDOWN command can also be used as a software protection mechanism while the device is not in active use because in the DEEP POWER-DOWN mode the device ignores
all WRITE, PROGRAM, and ERASE commands.
Driving chip select (S#) HIGH deselects the device, and puts it in the STANDBY POWER
mode if there is no internal cycle currently in progress. Once in STANDBY POWER
mode, the DEEP POWER-DOWN mode can be entered by executing the DEEP POWERDOWN command, subsequently reducing the standby current from ICC1 to ICC2.
To take the device out of DEEP POWER-DOWN mode, the RELEASE from DEEP POWER-DOWN command must be issued. Other commands must not be issued while the
device is in DEEP POWER-DOWN mode. The DEEP POWER-DOWN mode stops automatically at power-down. The device always powers up in STANDBY POWER mode.
The DEEP POWER-DOWN command is entered by driving S# LOW, followed by the
command code on serial data input (DQ0). S# must be driven LOW for the entire duration of the sequence.
S# must be driven HIGH after the eighth bit of the command code has been latched in.
Otherwise the DEEP POWER-DOWN command is not executed. As soon as S# is driven
HIGH, it requires a delay of tDP before the supply current is reduced to ICC2 and the
DEEP POWER-DOWN mode is entered.
Any DEEP POWER-DOWN command issued while an ERASE, PROGRAM, or WRITE cycle is in progress is rejected without any effect on the cycle that is in progress.
Figure 27: DEEP POWER-DOWN Command Sequence
0
7
C
LSB
t
DP
Command
DQ0
MSB
Standby Mode
Deep Power-Down Mode
Don’t Care
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M25PX16 Serial Flash Embedded Memory
RELEASE from DEEP POWER-DOWN
RELEASE from DEEP POWER-DOWN
Once the device has entered DEEP POWER-DOWN mode, all commands are ignored except RELEASE from DEEP POWER-DOWN. Executing this command takes the device
out of the DEEP POWER-DOWN mode.
The RELEASE from DEEP POWER-DOWN command is entered by driving chip select
(S#) LOW, followed by the command code on serial data input (DQ0). S# must be driven
LOW for the entire duration of the sequence.
The RELEASE from DEEP POWER-DOWN command is terminated by driving S# high.
Sending additional clock cycles on serial clock C while S# is driven LOW causes the
command to be rejected and not executed.
After S# has been driven high, followed by a delay, tRDP, the device is put in the STANDBY mode. S# must remain HIGH at least until this period is over. The device waits to be
selected so that it can receive, decode, and execute commands.
Any RELEASE from DEEP POWER-DOWN command issued while an ERASE, PROGRAM, or WRITE cycle is in progress is rejected without any effect on the cycle that is in
progress.
Figure 28: RELEASE from DEEP POWER-DOWN Command Sequence
0
7
C
LSB
RDP
t
Command
DQ0
MSB
DQ1
High-Z
Deep Power-Down Mode
Standby Mode
Don’t Care
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M25PX16 Serial Flash Embedded Memory
Power-Up/Down and Supply Line Decoupling
Power-Up/Down and Supply Line Decoupling
At power-up and power-down, the device must not be selected; that is, chip select (S#)
must follow the voltage applied on V CC until V CC reaches the correct value:
• VCC,min at power-up, and then for a further delay of tVSL
• VSS at power-down
A safe configuration is provided in the SPI Modes section.
To avoid data corruption and inadvertent write operations during power-up, a poweron-reset (POR) circuit is included. The logic inside the device is held reset while V CC is
less than the POR threshold voltage, V WI – all operations are disabled, and the device
does not respond to any instruction. Moreover, the device ignores the following instructions until a time delay of tPUW has elapsed after the moment that V CC rises above the
VWI threshold:
•
•
•
•
•
•
•
•
•
WRITE ENABLE
PAGE PROGRAM
DUAL INPUT FAST PROGRAM
PROGRAM OTP
SUBSECTOR ERASE
SECTOR ERASE
BULK ERASE
WRITE STATUS REGISTER
WRITE to LOCK REGISTER
However, the correct operation of the device is not guaranteed if, by this time, V CC is still
below V CC.min. No WRITE STATUS REGISTER, PROGRAM, or ERASE instruction should
be sent until:
• tPUW after V CC has passed the V WI threshold
• tVSL after V CC has passed the V CC,min level
If the time, tVSL, has elapsed, after V CC rises above V CC,min, the device can be selected
for READ instructions even if the tPUW delay has not yet fully elapsed.
VPPH must be applied only when V CC is stable and in the V CC,min to V CC,max voltage
range.
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M25PX16 Serial Flash Embedded Memory
Power-Up/Down and Supply Line Decoupling
Figure 29: Power-Up Timing
VCC
VCC,max
PROGRAM, ERASE, and WRITE commands are rejected by the device
Chip selection not allowed
VCC,min
t
RESET state
of the
device
VSL
READ access allowed
Device fully
accessible
VWI
t
PUW
Time
After power-up, the device is in the following state:
•
•
•
•
•
Standby power mode (not the deep power-down mode)
Write enable latch (WEL) bit is reset
Write in progress (WIP) bit is reset
Write lock bit = 0
Lock down bit = 0
Normal precautions must be taken for supply line decoupling to stabilize the V CC supply. Each device in a system should have the V CC line decoupled by a suitable capacitor
close to the package pins; generally, this capacitor is of the order of 100 nF.
At power-down, when V CC drops from the operating voltage to below the POR threshold
voltage V WI, all operations are disabled and the device does not respond to any instruction.
Note: If power-down occurs while a WRITE, PROGRAM, or ERASE cycle is in progress,
some data corruption may result.
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M25PX16 Serial Flash Embedded Memory
Maximum Ratings and Operating Conditions
Maximum Ratings and Operating Conditions
Caution: Stressing the device beyond the absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and operation of the device beyond any specification or condition in the operating sections of this datasheet is not
recommended. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
Table 12: Absolute Maximum Ratings
Symbol
Parameter
TSTG
Storage temperature
TLEAD
Lead temperature during soldering
Min
Max
Units
–65
150
°C
—
See note
°C
VCC+0.6
V
Notes
1
VIO
Input and output voltage (with respect to
ground)
–0.6
VCC
Supply voltage
–0.6
4.0
V
VPP
FAST PROGRAM / ERASE voltage
–0.2
10.0
V
2
VESD
Electrostatic discharge voltage (Human Body
model)
–2000
2000
V
3
Notes:
1. The TLEAD signal is compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the Micron RoHS compliant 7191395 specification, and the European directive
on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
2. Avoid applying VPPH to the W#/VPP pin during the BULK ERASE operation.
3. The VESD signal: JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).
Table 13: Operating Conditions
Symbol
Parameter
Min
Max
Unit
VCC
Supply voltage
2.3
3.6
V
VPPH
Supply voltage on VPP pin
8.5
9.5
V
TA
Ambient operating temperature (device grade 6)
–40
85
°C
TA
Ambient operating temperature (device grade 3)
–40
125
°C
Table 14: Data Retention and Endurance
Parameter
PROGRAM and ERASE cycles
Data Retention
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Condition
Grade 3; Autograde 6; Grade 6
at 55°C
43
Min
Max
Unit
100,000
–
Cycles per sector
20
–
years
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M25PX16 Serial Flash Embedded Memory
Electrical Characteristics
Electrical Characteristics
Table 15: Power Up Timing Specifications
Symbol
Parameter
tVSL
VCC[MIN] to S# LOW
tPUW
Time delay to WRITE command
VWI
Write Inhibit voltage
Note:
Min
Max
Units
30
–
µs
1
10
ms
1.5
2.1
V
1. These parameters are characterized only.
Table 16: DC Current Specifications
Device Grade 6 Device Grade 3
Symbol
Parameter
Test Condition
Min
Max
Min
Max
Units
ILI
Input leakage current
–
–
±2
–
±2
µA
ILO
Output leakage current
–
–
±2
–
±2
µA
ICC1
Standby current
S# = VCC, VIN = VSS or VCC
–
50
–
100
µA
ICC2
Deep power-down current
S# = VCC, VIN = VSS or VCC
–
10
–
100
µA
ICC3
Operating current (READ)
C = 0.1VCC / 0.9VCC at 75MHz,
DQ1 = open
–
12
–
12
mA
C = 0.1VCC / 0.9VCC at 33MHz,
DQ1 = open
–
4
–
4
mA
Operating current
(DUAL OUTPUT FAST READ)
C = 0.1VCC / 0.9VCC at 75MHz,
DQ1 = open
–
15
–
15
mA
Operating current
(PAGE PROGRAM)
S# = VCC
–
15
–
15
mA
Operating current
(DUAL INPUT FAST PROGRAM)
S# = VCC
–
15
–
15
mA
ICC5
Operating current
(WRITE STATUS REGISTER)
S# = VCC
–
15
–
15
mA
ICC6
Operating current
(SECTOR ERASE)
S# = VCC
–
15
–
15
mA
ICC7
Operating current
(BULK ERASE)
S# = VCC
–
15
–
15
mA
ICC4
Table 17: DC Voltage Specifications
Symbol
Parameter
Test Condition
Min
Max
Units
VIL
Input LOW voltage
–
–0.5
0.3VCC
V
VIH
Input HIGH voltage
–
0.7VCC
VCC+0.4
V
VOL
Output LOW voltage
IOL = 1.6mA
–
0.4
V
VOH
Output HIGH voltage
IOL = –100µA
VCC–0.2
–
V
Note:
PDF: 09005aef845665a5
m25px16.pdf - Rev. B 3/13 EN
1. All specifications apply to both device grade 6 and device grade 3.
44
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M25PX16 Serial Flash Embedded Memory
AC Characteristics
AC Characteristics
In the following AC specifications, output High-Z is defined as the point where data out
is no longer driven; however, this is not applicable to the M25PX64 device.
Table 18: AC Measurement Conditions
Symbol
CL
Parameter
Min
Max
Unit
30
30
pF
–
5
ns
Input pulse voltages
0.2VCC
0.8VCC
V
Input timing reference voltages
0.3VCC
0.7VCC
V
Output timing reference voltages
VCC / 2
VCC / 2
V
Load capacitance
Input rise and fall times
Figure 30: AC Measurement I/O Waveform
Input levels
Input and output
timing reference levels
0.8VCC
0.7VCC
0.5VCC
0.2VCC
0.3VCC
Table 19: Capacitance
Symbol Parameter
CIN/OUT
CIN
Test condition
Min
Max
Unit
Notes
1
Input/output capacitance (DQ0/DQ1)
VOUT = 0 V
–
8
pF
Input capacitance (other pins)
VIN = 0 V
–
6
pF
Note:
PDF: 09005aef845665a5
m25px16.pdf - Rev. B 3/13 EN
1. Values are sampled only, not 100% tested, at TA=25°C and a frequency of 33MHz.
45
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M25PX16 Serial Flash Embedded Memory
AC Characteristics
Table 20: AC Specifications (75MHz)
Note 1 applies to the entire table.
Symbol
Alt.
Parameter
Min
Typ
Max
Unit
Notes
fC
fC
Clock frequency for all commands (except READ)
DC
–
75
MHz
fR
–
Clock frequency for READ command
DC
–
33
MHz
tCH
tCLH
Clock HIGH time
6
–
–
ns
2
tCL
tCLL
Clock LOW time
6
–
–
ns
2
tCLCH
–
Clock rise time (peak to peak)
0.1
–
–
V/ns
3, 4
tCHCL
–
Clock fall time (peak to peak)
0.1
–
–
V/ns
3, 4
tSLCH
tCSS
S# active setup time (relative to C)
5
–
–
ns
S# not active hold time (relative to C)
5
–
–
ns
tCHSL
tDVCH
tDSU
Data-in setup time
2
–
–
ns
tCHDX
tDH
Data-in hold time
5
–
–
ns
tCHSH
–
S# active hold time (relative to C)
5
–
–
ns
tSHCH
–
S# not active setup time (relative to C)
5
–
–
ns
tSHSL
tCSH
S# deselect time
80
–
–
ns
tSHQZ
tDIS
Output disable time
–
–
8
ns
tCLQV
tV
Clock LOW to output valid under 30pF
–
–
8
ns
Clock LOW to output valid under 10pF
–
–
6
ns
tCLQX
tHO
Output hold time
0
–
–
ns
tHLCH
–
HOLD# setup time (relative to C)
5
–
–
ns
tCHHH
–
HOLD# hold time (relative to C)
5
–
–
ns
tHHCH
–
HOLD# setup time (relative to C)
5
–
–
ns
3
tCHHL
–
HOLD# hold time (relative to C)
5
–
–
ns
tHHQX
tLZ
HOLD# to output Low-Z
–
–
8
ns
3
tHLQZ
tHZ
HOLD# to output High-Z
–
–
8
ns
3
tWHSL
–
WRITE PROTECT setup time
20
–
–
ns
5
tSHWL
–
WRITE PROTECT hold time
100
–
–
ns
5
tVPPHSL
–
Enhanced program supply voltage HIGH (VPPH) to S#
LOW
200
–
–
ns
6
tDP
–
S# HIGH to deep power-down mode
–
–
3
μs
3
tRDP
–
S# HIGH to standby mode
–
–
30
μs
3
tW
–
WRITE STATUS REGISTER cycle time
–
1.3
15
ms
tPP
–
PAGE PROGRAM cycle time (256 bytes)
–
0.8
5
ms
7
tPP
–
PAGE PROGRAM cycle time (n bytes)
–
int(n/8)
× 0.025
5
ms
7, 8
tPP
–
PROGRAM OTP cycle time (64 bytes)
–
0.2
5
ms
7
tSSE
–
SUBSECTOR ERASE cycle time
–
70
150
ms
tSE
–
SECTOR ERASE cycle time
–
0.6
3
s
PDF: 09005aef845665a5
m25px16.pdf - Rev. B 3/13 EN
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M25PX16 Serial Flash Embedded Memory
AC Characteristics
Table 20: AC Specifications (75MHz) (Continued)
Note 1 applies to the entire table.
Symbol
Alt.
tBE
–
BULK ERASE cycle time
Notes:
PDF: 09005aef845665a5
m25px16.pdf - Rev. B 3/13 EN
Parameter
Min
Typ
Max
Unit
–
15
80
s
Notes
1. AC specification values for 75MHz operations shown here are allowed only on the VCC
range 2.7V - 3.6V. Typical values are given for TA = 25°C.
2. The sum of tCH + tCL signal values must be greater than or equal to 1/fC.
3. The tCLCH, tCHCL, tSHQZ, tHHQX, tHLQZ, tDP, and tRDP signal values are guaranteed by characterization, not 100% tested in production.
4. The tCLCH and tCHCL signals clock rise and fall time values are expressed as a slew-rate.
5. The tWHSL and tSHWL signal values are only applicable as a constraint for a WRITE STATUS
REGISTER command when SRWD bit is set at 1.
6. The tVPPHSL signal value for VPPH should be kept at a valid level until the program or
erase operation has completed and its result (success or failure) is known. Avoid applying VPPH to the W/VPP pin during the BULK ERASE operation.
7. To obtain optimized timings (tPP) when programming consecutive bytes with the PAGE
PROGRAM command, use one sequence including all the bytes versus several sequences
of only a few bytes (1 is less than or equal to n is less than or equal to 256).
8. int(A) corresponds to the upper integer part of A. For example, int(12/8) = 2, int(32/8) =
4 int(15.3) =16.
9. OE# may be delayed by up to tELQV - tGLQV after CE#’s falling edge without impact to
tELQV.
47
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© 2012 Micron Technology, Inc. All rights reserved.
M25PX16 Serial Flash Embedded Memory
AC Characteristics
Figure 31: Serial Input Timing
tSHSL
S#
tCHSL
tSLCH
tCHSH
tSHCH
C
tDVCH
tCHCL
tCHDX
DQ0
tCLCH
LSB IN
MSB IN
high impedance
DQ1
Figure 32: Write Protect Setup and Hold During WRSR when SRWD = 1 Timing
W#/VPP
tSHWL
tWHSL
S#
C
DQ0
high impedance
DQ1
PDF: 09005aef845665a5
m25px16.pdf - Rev. B 3/13 EN
48
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© 2012 Micron Technology, Inc. All rights reserved.
M25PX16 Serial Flash Embedded Memory
AC Characteristics
Figure 33: Hold Timing
S#
tHLCH
tHHCH
tCHHL
C
tCHHH
tHLQZ
tHHQX
DQ1
DQ0
HOLD#
Figure 34: Output Timing
S#
tCH
C
tCLQV
tCLQX
tCLQV
tCL
tSHQZ
tCLQX
LSB OUT
DQ1
tQLQH
tQHQL
DQ0
ADDRESS
LSB IN
PDF: 09005aef845665a5
m25px16.pdf - Rev. B 3/13 EN
49
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© 2012 Micron Technology, Inc. All rights reserved.
M25PX16 Serial Flash Embedded Memory
AC Characteristics
Figure 35: VPPH Timing
end of command
(identified by WIP polling)
S#
C
DQ0
VPPH
VPP
PDF: 09005aef845665a5
m25px16.pdf - Rev. B 3/13 EN
tVPPHSL
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M25PX16 Serial Flash Embedded Memory
Package Information
Package Information
Figure 36: VFQFPN8 (MLP8) 6mm x 5mm
0.10 MAX/
0 MIN
5.75 TYP
Pin one
indicator
4.75 TYP
5 TYP
+0.30
4 -0.20
1.27
TYP
0.10 M C A B
B
0.15 C A
6 TYP
A
2x
0.15 C B
0.10 C B
0.10 C A
+0.15
0.60 -0.10
3.40 ±0.20
+0.08
0.40 -0.05
θ
12°
0.05
+0.15
0.85 -0.05
0.20 TYP
0 MIN/
0.05 MAX
Note:
PDF: 09005aef845665a5
m25px16.pdf - Rev. B 3/13 EN
0.65 TYP
C
1. Drawing is not to scale.
51
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M25PX16 Serial Flash Embedded Memory
Package Information
Figure 37: SO8W 208 mils Body Width
1.70 MIN/
1.91 MAX
0.36 MIN/
0.48 MAX
1.78 MIN/
2.16 MAX
0.15 MIN/
0.25 MAX
0.10 MAX
1.27 TYP
5.08 MIN/
5.49 MAX
8
7.70 MIN/
8.10 MAX
5.08 MIN/
5.49 MAX
1
Note:
PDF: 09005aef845665a5
m25px16.pdf - Rev. B 3/13 EN
0.05 MIN/
0.25 MAX
0º MIN/
10° MAX
0.50 MIN/
0.80 MAX
1. Drawing is not to scale.
52
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© 2012 Micron Technology, Inc. All rights reserved.
M25PX16 Serial Flash Embedded Memory
Package Information
Figure 38: SO8N 150 mils Body Width
0.25 MIN/
x 45°
0.50 MAX
1.75 MAX/
1.25 MIN
0.17 MIN/
0.23 MAX
0.10 MAX
0.28 MIN/
0.48 MAX
1.27 TYP
0.25mm
Gauge plane
4.90 ±0.10
8
0o MIN/
8o MAX
6.00 ±0.20
3.90 ±0.10
1
0.10 MIN/
0.25 MAX
0.40 MIN/
1.27 MAX
1.04 TYP
Note:
PDF: 09005aef845665a5
m25px16.pdf - Rev. B 3/13 EN
1. Drawing is not to scale.
53
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© 2012 Micron Technology, Inc. All rights reserved.
M25PX16 Serial Flash Embedded Memory
Package Information
Figure 39: TBGA 24-Ball, 6mm x 8mm
DETAIL A
Top view
(balls down)
+0.10
6.00 -0.10
MAX
1.50 TYP
0.15
(4x)
SOLDER BALL (Typ)
A
+0.05
0.40 -0.05
2.00 TYP
D
Ball A1 corner
index area
+0.10
8.00 -0.10
0.15 S C A S B S
0.08 S C
MAX
ISO E
E
B
Bottom view
seating plane
C
(balls up)
4.00 TYP
Detail A
0.20 MIN
1.00 TYP
0.10
MAX
C
0.79 TYP
0.10
MAX
C
1.20
MAX
E
D
D
4.00 TYP
C
B
1.00 TYP
A
2.00 TYP
1
1.00 TYP
Note:
PDF: 09005aef845665a5
m25px16.pdf - Rev. B 3/13 EN
2
3
4
5
E
1. Drawing is not to scale.
54
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M25PX16 Serial Flash Embedded Memory
Device Ordering Information
Device Ordering Information
Micron Serial NOR Flash memory is available in different configurations and densities.
Verify valid part numbers by using Micron’s part catalog search at www.micron.com. To
compare features and specifications by device type, visit www.micron.com/products.
Contact the factory for devices not found. For more information on how to identify
products and top-side marking by the process identification letter, refer to technical
note TN-12-24, Serial Flash Memory Device Marking for the M25P, M25PE, M25PX, and
N25Q Product Families.
Table 21: Part Number Information Scheme
Part Number
Category
Category Details
Device type
M25PX = Serial Flash memory, 4KB and 64KB erasable sectors, dual I/O
Density
16 = 16Mb (2Mb x 8-bit)
Security features
– = No extra security
Notes
1
SO = OTP configurable
ST = OTP configurable plus protection at power-up
S = CFD programmed with UID
Operating voltage
V = VCC = 2.3V to 3.6V (automotive parts available only in 2.7V to 3.6V)
Package
MP = VFQFPN 6mm x 5mm (MLP8)
MW = SO8W (208 mils width)
MN = SO8N (150 mils width)
ZM = TBGA24 6mm x 8mm
Grade
6 = Industrial temperature range: –40°C to 85°C. Device tested with standard test flow
(option A is not selected).
Device tested with high reliability certified test flow, if automotive grade option A is selected.
3 = Automotive temperature range: –40°C to 125°C. Device tested with high reliability
certified test flow.
Packing
2
E = Standard packing
T = Tape and reel packing
Tube for SO8N, SO8W packages
Tray for MLP and BGA packages
Plating technology
P or G = RoHS compliant (G is not available for automotive commercial product)
Lithography
B = 110nm, Fab 2 diffusion plant (Automotive only)
Blank = 110nm
Automotive grade
A = Automotive –40°C to 85°C (device grade 6). Device tested with high reliability certified test flow.
2
Blank = Automotive –40°C to 125°C
Notes:
PDF: 09005aef845665a5
m25px16.pdf - Rev. B 3/13 EN
1. Secure options available upon customer request.
2. Micron strongly recommends the use of the Automotive Grade devices (AutoGrade 6
and Grade 3) for use in an automotive environment. The High Reliability Certified Flow
(HRCF) is described in the quality note QNEE9801.
55
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© 2012 Micron Technology, Inc. All rights reserved.
M25PX16 Serial Flash Embedded Memory
Revision History
Revision History
Rev. B – 3/2013
• Replaced SO8W package dimension figure
• Revised text at the beginning of Ordering Information
Rev. A – 11/2012
• Initial Micron release with rebrand.
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
www.micron.com/productsupport Customer Comment Line: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.
PDF: 09005aef845665a5
m25px16.pdf - Rev. B 3/13 EN
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