M58WR032KB70ZQ6WTR

M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Features M58WRxxxKT/B - 32Mb & 64Mb, 1.8V, x16 Multi Bank Burst, Flash M58WR032KT, M58WR064KT, M58WR032KB, M58WR064KB Features • Supply voltage – VDD = 1.7V to 2V for PROGRAM, ERASE and READ – VDDQ = 1.7V to 2V for I/O buffers – VPP = 9V for fast program • SYCHRONOUS/ASYCHRONOUS READ – SYCHRONOUS BURST READ mode: 66 MHz – Asynchronous/synchronous page READ mode – Random access times: 70ns • SYCHRONOUS BURST READ SUSPEND • Programming time – 10µs by word typical for fast factory program – Double/quadruple word program option – Enhanced factory program options • Memory blocks – Multiple bank memory array: 4Mb banks – Parameter blocks (top or bottom location) • Dual operations – PROGRAM ERASE in one bank while read in others – No delay between read and write operations • Block locking – All blocks locked at power-up – Any combination of blocks can be locked – WP# for block lock-down • Security – 128 bit user programmable OTP cells – 64 bit unique device number • Common Flash interface (CFI) • 100,000 PROGRAM/ERASE cycles per block • Electronic signature • Manufacturer code: 20h – Device codes: M58WR032KT (top): 8814h M58WR032KB (bottom): 8815h M58WR064KT (top): 8810h M58WR064KB (bottom): 8811h • RoHS compliant packages available • Automotive Certified Parts Available PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 multi bank burst, Flash - Rev. G 10/11 EN 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Table of Contents Table of Contents Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Signal Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Address Inputs (A[MAX:0]) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Data Inputs/Outputs (DQ[15:0]). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Chip Enable (CE#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Output Enable (OE#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Write Enable (WE#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Write Protect (WP#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Reset (RST#). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Latch Enable (ADV#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Clock (CLK) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Wait (WAIT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 VDD Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 VDDQ Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 VPP Program Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 VSS Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 VSSQ Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Bus READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Bus Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Address Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Output Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Command Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Command Interface - Standard Commands. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 READ ARRAY Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 READ STATUS REGISTER Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 READ ELECTRONIC SIGNATURE Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 READ CFI QUERY Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 CLEAR STATUS REGISTER Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 BLOCK ERASE Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 PROGRAM Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 PROGRAM/ERASE SUSPEND Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 PROGRAM/ERASE RESUME Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 PROTECTION REGISTER PROGRAM Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 SET CONFIGURATION REGISTER Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 BLOCK LOCK Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 BLOCK UNLOCK Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 BLOCK LOCK-DOWN Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 Command Interface - Factory PROGRAM Commands. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26 DOUBLE WORD PROGRAM Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26 QUADRUPLE WORD PROGRAM Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26 ENHANCED FACTORY PROGRAM Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 Setup Phase. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 PROGRAM Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 Verify Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 Exit Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29 QUADRUPLE ENHANCED FACTORY PROGRAM Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29 Setup Phase. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29 PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Table of Contents Load Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29 PROGRAM and VERIFY Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30 Exit Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30 Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32 PROGRAM/ERASE CONTROLLER STATUS Bit (SR7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32 ERASE SUSPEND STATUS Bit (SR6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32 ERASE STATUS Bit (SR5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33 PROGRAM STATUS Bit (SR4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33 VPP Status Bit (SR3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33 PROGRAM SUSPEND STATUS Bit (SR2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33 Block Protection Status Bit (SR1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34 Bank Write/Multiple Word PROGRAM Status Bit (SR0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34 Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36 READ Select Bit (CR15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36 X-latency Bits (CR13-CR11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36 Wait Polarity Bit (CR10). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36 Data Output Configuration Bit (CR9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36 Wait Configuration Bit (CR8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37 Burst Type Bit (CR7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37 Valid Clock Edge Bit (CR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37 Wrap Burst Bit (CR3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37 Burst Length Bits (CR2-CR0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37 Read Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42 ASYCHRONOUS READ Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42 SYCHRONOUS BURST READ Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42 SYCHRONOUS BURST READ Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43 SINGLE SYCHRONOUS READ Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44 Dual Operations and Multiple Bank Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45 Block Locking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .47 Reading a Block’s Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .47 Locked State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .47 Unlocked State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .47 Lock-down State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .47 Locking Operations During Erase Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .48 Program and Erase Times and Endurance Cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51 DC and AC Parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52 Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .68 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .70 Appendix A: Block Address Tables. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .71 Appendix B: Common Flash Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .84 Appendix C: Flowcharts and Pseudo Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .94 ENHANCED FACTORY PROGRAM Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 QUADRUPLE ENHANCED FACTORY PROGRAM Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111 PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash List of Tables List of Tables Table 1: Table 2: Table 3: Table 4: Table 5: Table 6: Table 7: Table 8: Table 9: Table 10: Table 11: Table 12: Table 13: Table 14: Table 15: Table 16: Table 17: Table 18: Table 19: Table 20: Table 21: Table 22: Table 23: Table 24: Table 25: Table 26: Table 27: Table 28: Table 29: Table 30: Table 31: Table 32: Table 33: Table 34: Table 35: Table 36: Table 37: Table 38: Table 39: Table 40: Table 41: Table 42: Table 43: Table 44: Table 45: Table 46: Table 47: Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 M58WR032KT/B Bank Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 M58WR064KT/B Bank Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Command Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Standard Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 Electronic Signature Codes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 Factory Program Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31 Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35 Latency Settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36 Configuration Register. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38 Burst Type Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39 Dual Operations Allowed in Other Banks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45 Dual Operations Allowed in Same Bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .46 Dual Operation Limitations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .46 Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49 Program, Erase Times and Endurance Cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51 Operating and AC Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52 Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53 DC Characteristics - Currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54 DC Characteristics - Voltages. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .55 ASYCHRONOUS READ AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58 Synchronous Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .62 Write AC Characteristics, Write Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .64 Write AC Characteristics, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .66 Reset and Power-up AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .67 VFBGA56 7.7 × 9 mm - 8 × 7 Active Ball Array, 0.75 mm, Package Mechanical Data . . . . . . . . . . . . . .69 Ordering Information Scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .70 Top Boot Block Addresses, M58WR032KT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .71 Bottom Boot Block Addresses, M58WR032KB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .73 Top Boot Block Addresses, M58WR064KT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .76 Bottom Boot Block Addresses, M58WR064KB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .79 Query Structure Overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .84 CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .85 CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .86 Device Geometry Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .87 Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .88 Protection Register Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .89 Burst Read Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .89 Bank and Erase Block Region Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .89 Bank and Erase Block Region 1 Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .90 Bank and Erase Block Region 2 Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .92 Command Interface States - Modify Table, Next State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106 Command Interface States - Modify Table, Next Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 Command Interface States - Lock Table, Next State. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109 Command Interface States - Lock Table, Next Output. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110 PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 4 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash List of Figures List of Figures Figure 1: Figure 2: Figure 3: Figure 4: Figure 5: Figure 6: Figure 7: Figure 8: Figure 9: Figure 10: Figure 11: Figure 12: Figure 13: Figure 14: Figure 15: Figure 16: Figure 17: Figure 19: Figure 20: Figure 21: Figure 22: Figure 23: Figure 24: Figure 25: Figure 26: Figure 27: Figure 28: Figure 29: Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 VFBGA56 Connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 M58WR032KT/B Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 M58WR064KT/B Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Protection Register Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 X-latency and Data Output Configuration Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .41 Wait Configuration Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .41 AC Measurement I/O Waveform. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52 AC Measurement Load Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53 ASYCHRONOUS RANDOM ACCESS READ AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .56 Asynchronous Page Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57 SYCHRONOUS BURST READ AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .59 SINGLE SYCHRONOUS READ AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 SYCHRONOUS BURST READ Suspend AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .61 Clock Input AC Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .62 Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .63 Write AC Waveforms, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65 VFBGA56 7.7 × 9 mm - 8 × 7 Active Ball Array, 0.75 mm, Package Outline. . . . . . . . . . . . . . . . . . . . . . .68 Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .94 DOUBLE WORD PROGRAM Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .95 QUADRUPLE WORD PROGRAM Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .96 PROGRAM SUSPEND STATUS and RESUME Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . .97 BLOCK ERASE Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .98 ERASE SUSPEND and RESUME Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .99 Locking Operations Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 PROTECTION REGISTER PROGRAM Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . 101 ENHANCED FACTORY PROGRAM Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102 QUADRUPLE ENHANCED FACTORY PROGRAM Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104 PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 5 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Description Description The M58WR032KT/B and M58WR064KT/B are 32Mb (2Mb ×16) and 64Mb (4Mb ×16) non-volatile Flash memories, respectively. They may be erased electrically at block level and programmed in-system on a word-by-word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2V VDDQ supply for the Input/Output pins. An optional 9 V VPP power supply is provided to speed up customer programming. The M58WRxxxKT/B feature an asymmetrical block architecture. • The M58WR032KT/B has an array of 71 blocks, and is divided into 4Mb banks. There are 7 banks each containing 8 main blocks of 32 Kwords, and one parameter bank containing 8 parameter blocks of 4 Kwords and 7 main blocks of 32 Kwords. • The M58WR064KT/B has an array of 135 blocks, and is divided into 4Mb banks. There are 15 banks each containing 8 main blocks of 32 Kwords, and one parameter bank containing 8 parameter blocks of 4 Kwords and 7 main blocks of 32 Kwords. The multiple bank architecture allows dual operations. While programming or erasing in one bank, READ operations are possible in other banks. Only one bank at a time is allowed to be in PROGRAM or erase mode. It is possible to perform burst reads that cross bank boundaries. The bank architectures are summarized in Table 2 and Table 3 and the memory maps are shown in Figure 3 and Figure 4. The parameter blocks are located at the top of the memory address space for the M58WR032KT and M58WR064KT, and at the bottom for the M58WR032KB and M58WR064KB. Each block can be erased separately. Erase can be suspended to perform PROGRAM in any other block, and then resumed. PROGRAM can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles using the supply voltage VDD. Two enhanced factory programming commands are available to speed up programming. PROGRAM and erase commands are written to the command interface of the memory. An internal PROGRAM/ERASE CONTROLLER manages the timings necessary for PROGRAM and erase operations. The end of a PROGRAM or erase operation can be detected and any error conditions identified in the Status Register. The command set required to control the memory is consistent with JEDEC standards. The device supports synchronous burst read and asynchronous read from all blocks of the memory array; at power-up the device is configured for asynchronous read. In synchronous burst mode, data is output on each clock cycle at frequencies of up to 66 MHz. The SYCHRONOUS BURST READ operation can be suspended and resumed. The device features an automatic standby mode. When the bus is inactive during ASYCHRONOUS READ operations, the device automatically switches to the automatic standby mode. In this condition the power consumption is reduced to the standby value IDD4 and the outputs are still driven. The M58WRxxxKT/B feature an instant, individual block locking scheme that allows any block to be locked or unlocked with no latency, enabling instant code and data protection. All blocks have three levels of protection. They can be locked and locked-down individually preventing any accidental programming or erasure. There is additional hardware protection against PROGRAM and erase. When VPP VPPLK all blocks are protected against PROGRAM or erase. All blocks are locked at power-up. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 6 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Description The device includes a Protection Register to increase the protection of a system’s design. The Protection Register is divided into two segments: a 64-bit segment containing a unique device number written by Micron, and a 128-bit segment one-time-programmable (OTP) by the user. The user programmable segment can be permanently protected. Figure 5 shows the Protection Register memory map. The memory is offered in either of the following packages: • VFBGA56 7.7 × 9 mm, 8 × 7 active ball array, 0.75 mm pitch The device is supplied with all the bits erased (set to 1). Figure 1: Logic Diagram VDD VDDQ VPP 16 A[MAX:0](1) DQ[15:0] WE# CE# OE# RP# M58WR032KT M58WR032KB M58WR064KT M58WR064KB WAIT WP# ADV# CLK VSS Notes: Table 1: VSSQ AI13420b 1. AMAX is equal to A20 in the M58WR032KT/B and, to A21 in the M58WR064KT/B. Signal Names Signal name Function Direction A[MAX:0]1 Address inputs Inputs DQ[15:0] Data input/outputs, command inputs I/O CE# Chip Enable Input OE# Output Enable Input WE# Write Enable Input RST# Reset Input WP# Write Protect Input CLK Clock Input ADV# Latch Enable Input WAIT Wait Output VDD Supply voltage Input VDDQ Supply voltage for input/output buffers Input PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 7 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Description Table 1: Signal Names (Continued) Signal name Function Direction VPP Optional supply voltage for fast PROGRAM and erase VSS Ground VSSQ Input/output supply ground NC Not connected internally DU Do not use Input Notes: 1.AMAX is equal to A20 in the M58WR032KT/B and, to A21 in the M58WR064KT/B. Figure 2: VFBGA56 Connections (top view through package) 1 2 3 4 5 6 7 8 A A11 A8 VSS VDD VPP A18 A6 A4 B A12 A9 A20 CLK RST# A17 A5 A3 C A13 A10 A21/ NC(1) ADV# WE# A19 A7 A2 D A15 A14 WAIT A16 DQ12 WP# NC A1 E VDDQ DQ15 DQ6 DQ4 DQ2 DQ1 CE# A0 F VSS DQ14 DQ13 DQ11 DQ10 DQ9 DQ0 OE# G DQ7 VSSQ DQ5 VDD DQ3 VDDQ DQ8 VSSQ AI13870 Notes: 1. Ball C3 is A21 in the M58WR064KT/B, it is not connected internally in the M58WR032KT/B. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 8 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Description Table 2: M58WR032KT/B Bank Architecture Parameter bank 4Mb 8 blocks of 4 Kword 7 blocks of 32 Kword Bank 1 4Mb - 8 blocks of 32 Kword Bank 2 4Mb - 8 blocks of 32 Kword Bank 3 4Mb - 8 blocks of 32 Kword Table 3: ---- Main blocks ---- Parameter blocks ---- Bank size ---- Number Bank 6 4Mb - 8 blocks of 32 Kword Bank 7 4Mb - 8 blocks of 32 Kword M58WR064KT/B Bank Architecture Parameter Bank 4Mb 8 blocks of 4 Kword 7 blocks of 32 Kword Bank 1 4Mb - 8 blocks of 32 Kword Bank 2 4Mb - 8 blocks of 32 Kword Bank 3 4Mb - 8 blocks of 32 Kword ---- Main blocks ---- Parameter blocks ---- Bank size ---- Number Bank 14 4Mb - 8 blocks of 32 Kword Bank 15 4Mb - 8 blocks of 32 Kword PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 9 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Description Figure 3: M58WR032KT/B Memory Map M58WR032KT - Top Boot Block Address lines A[20:0] 000000h 007FFFh 32 KWord 038000h 03FFFFh 32 KWord 8 Main Blocks 1B8000h 1BFFFFh 1C0000h 1C7FFFh Parameter Bank 1F0000h 1F7FFFh 1F8000h 1F8FFFh 1FF000h 1FFFFFh 078000h 07FFFFh 080000h 087FFFh 0B8000h 0BFFFFh 0C0000h 0C7FFFh 32 KWord 8 Main Blocks 8 Parameter Blocks 4KWord 32 KWord 7 Main Blocks 32 KWord 32 KWord 8 Main Blocks 32 KWord 32 KWord 8 Main Blocks Bank 2 32 KWord Bank 1 4 KWord Bank 1 32 KWord 8 Main Blocks 007000h 007FFFh 008000h 00FFFFh 038000h 03FFFFh 040000h 047FFFh 32 KWord Bank 2 178000h 17FFFFh 180000h 187FFFh Parameter Bank 32 KWord Bank 3 138000h 13FFFFh 140000h 147FFFh 000000h 000FFFh 8 Main Blocks Bank 7 100000h 107FFFh M58WR032KB - Bottom Boot Block Address lines A[20:0] 32 KWord 32 KWord 8 Main Blocks Bank 3 32 KWord 0F8000h 0FFFFFh 32 KWord 1C0000h 1C7FFFh 32 KWord 1F8000h 1FFFFFh 32 KWord 32 KWord 7 Main Blocks 32 KWord 4 KWord 8 Parameter Blocks Bank 7 4 KWord 8 Main Blocks AI13421 PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 10 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Description Figure 4: M58WR064KT/B Memory Map M58WR064KB - Bottom Boot Block Address lines A[21:0] M58WR064KT - Top Boot Block Address lines A[21:0] 000000h 007FFFh 32 KWord 038000h 03FFFFh 32 KWord Bank 15 300000h 307FFFh 8 Main Blocks Parameter Bank 3F0000h 3F7FFFh 3F8000h 3F8FFFh 3FF000h 3FFFFFh 8 Parameter Blocks 4KWord 32 KWord 7 Main Blocks 32 KWord 32 KWord 8 Main Blocks 32 KWord 32 KWord 8 Main Blocks Bank 2 0B8000h 0BFFFFh 0C0000h 0C7FFFh 32 KWord Bank 1 3B8000h 3BFFFFh 3C0000h 3C7FFFh 078000h 07FFFFh 080000h 087FFFh 32 KWord 8 Main Blocks 4 KWord Bank 1 32 KWord 8 Main Blocks 007000h 007FFFh 008000h 00FFFFh 038000h 03FFFFh 040000h 047FFFh 32 KWord Bank 2 378000h 37FFFFh 380000h 387FFFh Parameter Bank 32 KWord Bank 3 338000h 33FFFFh 340000h 347FFFh 000000h 000FFFh 8 Main Blocks 32 KWord 32 KWord 8 Main Blocks Bank 3 32 KWord 0F8000h 0FFFFFh 32 KWord 3C0000h 3C7FFFh 32 KWord 3F8000h 3FFFFFh 32 KWord 32 KWord 7 Main Blocks 32 KWord 4 KWord 8 Parameter Blocks Bank 15 4 KWord 8 Main Blocks AI13784 PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 11 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Signal Descriptions Signal Descriptions See Figure 1: Logic Diagram and Table 1: Signal Names for a brief overview of the signals connected to this device. Address Inputs (A[MAX:0]) AMAX is the highest order address input. It is equal to A20 in the M58WR032KT/B and, to A21 in the M58WR064KT/B. The address inputs select the cells in the memory array to access during bus read operations. During bus write operations they control the commands sent to the command interface of the PROGRAM/ERASE CONTROLLER. Data Inputs/Outputs (DQ[15:0]) The data I/O output the data stored at the selected address during a bus read operation or input a command or the data to be programmed during a bus write operation. Chip Enable (CE#) The Chip Enable input activates the memory control logic, input buffers, decoders and sense amplifiers. When Chip Enable is at VILand Reset is at VIH the device is in active mode. When Chip Enable is at VIH the memory is deselected, the outputs are high impedance and the power consumption is reduced to the standby level. Output Enable (OE#) The Output Enable input controls data outputs during the bus read operation of the memory. Write Enable (WE#) The Write Enable input controls the bus write operation of the memory’s command interface. The data and address inputs are latched on the rising edge of Chip Enable or Write Enable, whichever occurs first. Write Protect (WP#) Write Protect is an input that provides additional hardware protection for each block. When Write Protect is at VIL, the lock-down is enabled and the protection status of the locked-down blocks cannot be changed. When Write Protect is at VIH, the lock-down is disabled and the locked-down blocks can be locked or unlocked. (refer to Table 16: Lock Status). Reset (RST#) The Reset input provides a hardware reset of the memory. When Reset is at VIL, the memory is in reset mode: the outputs are high impedance and the current consumption is reduced to the reset supply current IDD2. Refer to Table 21: DC Characteristics Currents for the value of IDD2. After Reset all blocks are in the locked state and the Configuration Register is reset. When Reset is at VIH, the device is in normal operation. Upon exiting reset mode the device enters ASYCHRONOUS READ mode, but a negative transition of Chip Enable or Latch Enable is required to ensure valid data outputs. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 12 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Signal Descriptions Latch Enable (ADV#) Latch Enable latches the address bits on its rising edge. The address latch is transparent when Latch Enable is at VIL and it is inhibited when Latch Enable is at VIH. Latch Enable can be kept Low (also at board level) when the Latch Enable function is not required or supported. Clock (CLK) The clock input synchronizes the memory to the microcontroller during synchronous read operations; the address is latched on a Clock edge (rising or falling, according to the configuration settings) when Latch Enable is at VIL. Clock is ‘don't care’ during ASYCHRONOUS READ and in WRITE operations. Wait (WAIT) Wait is an output signal used during synchronous read to indicate whether the data on the output bus are valid. This output is high impedance when Chip Enable is at VIH or Reset is at VIL. It can be configured to be active during the wait cycle or one clock cycle in advance. The WAIT signal is not gated by Output Enable. VDD Supply Voltage VDD provides the power supply to the internal core of the memory device. It is the main power supply for all operations (READ, PROGRAM and ERASE). VDDQ Supply Voltage VDDQ provides the power supply to the I/O pins and enables all outputs to be powered independently of VDD. VDDQ can be tied to VDD or can use a separate supply. VPP Program Supply Voltage VPP is both a control input and a power supply pin. The two functions are selected by the voltage range applied to the pin. If VPP is kept in a low voltage range (0 V to VDDQ) VPP is seen as a control input. In this case a voltage lower than VPPLK provides absolute protection against PROGRAM or erase, while VPP in the VPP1 range enables these functions (see Tables 21 and 22, DC characteristics for the relevant values). VPP is only sampled at the beginning of a PROGRAM or erase; a change in its value after the operation has started does not have any effect and PROGRAM or erase operations continue. If VPP is in the range of VPPH it acts as a power supply pin. In this condition VPP must be stable until the PROGRAM/ERASE algorithm is completed. VSS Ground VSS ground is the reference for the core supply, and must be connected to the system ground. VSSQ Ground VSSQ ground is the reference for the input/output circuitry driven by VDDQ. VSSQ must be connected to VSS PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 13 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Signal Descriptions Note: Each device in a system should have VDD, VDDQ and VPP de-coupled with a 0.1µF ceramic capacitor close to the pin (high-frequency, inherently-low inductance capacitors should be as close as possible to the package). See Figure 9: AC Measurement Load Circuit. The PCB track widths should be sufficient to carry the required VPP PROGRAM and erase currents. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 14 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Bus Operations Bus Operations There are six standard bus operations that control the device. These are bus read, bus write, address latch, output disable, standby and reset. See Table 4: Bus Operations for a summary. Typically glitches of less than 5ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus write operations. Bus READ Bus READ operations output the contents of the memory array, the electronic signature, the Status Register and the common Flash interface. Both Chip Enable and Output Enable must be at VIL in order to perform a READ operation. The Chip Enable input should be used to enable the device. Output Enable should be used to gate data onto the output. The data read depends on the previous command written to the memory (see Section : Command Interface). See Figures 10, 11, 12 and 13, read AC waveforms, and Tables 23 and 24, read AC characteristics, for details of when the output becomes valid. Bus Write Bus write operations write commands to the memory or latch input data to be programmed. A bus write operation is initiated when Chip Enable and Write Enable are at VIL with Output Enable at VIH. Commands, input data and addresses are latched on the rising edge of Write Enable or Chip Enable, whichever occurs first. The addresses can also be latched prior to the write operation by toggling Latch Enable. In this case the Latch Enable should be tied to VIH during the bus write operation. See Figures 16 and 17, write AC waveforms, and Tables 25 and 26, write AC characteristics for details of the timing requirements. Address Latch Address Latch operations input valid addresses. Both Chip enable and Latch Enable must be at VIL during Address Latch operations. The addresses are latched on the rising edge of Latch Enable. Output Disable The outputs are high impedance when the Output Enable is at VIH. Standby Standby disables most of the internal circuitry allowing a substantial reduction of the current consumption. The memory is in standby when Chip Enable and Reset are at VIH. The power consumption is reduced to the standby level and the outputs are set to high impedance, independently from the Output Enable or Write Enable inputs. If Chip Enable switches to VIH during a PROGRAM or erase operation, the device enters standby mode when finished. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 15 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Bus Operations Reset During reset mode the memory is deselected and the outputs are high impedance. The memory is in reset mode when Reset is at VIL. The power consumption is reduced to the standby level, independently from the Chip Enable, Output Enable or Write Enable inputs. If Reset is pulled to VSS during a PROGRAM or erase, this operation is aborted and the memory content is no longer valid. Table 4: Bus Operations See Note 1 WAIT2 Operation E G W L RP DQ15-DQ0 Bus read VIL VIL VIH VIL3 VIH Data output VIH Data input Bus write VIL VIH VIL VIL3 Address latch VIL X VIH VIL VIH Data output or Hi-Z 4 Output disable VIL VIH VIH X VIH Hi-Z Standby VIH X X X VIH Hi-Z Hi-Z Reset X X X X VIL Hi-Z Hi-Z Notes: 1. 2. 3. 4. X = ‘don't care’ WAIT signal polarity is configured using the SET CONFIGURATION REGISTER command. ADV# can be tied to VIH if the valid address has been previously latched. Depends on OE#. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 16 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Command Interface Command Interface All bus write operations to the memory are interpreted by the command interface. Commands consist of one or more sequential bus write operations. An internal PROGRAM/ERASE CONTROLLER manages all timings and verifies the correct execution of the PROGRAM and erase commands. The PROGRAM/ERASE CONTROLLER provides a Status Register whose output may be read at any time to monitor the progress or the result of the operation. The command interface is reset to read mode when power is first applied, when exiting from Reset, or whenever VDD is lower than VLKO. Command sequences must be followed exactly. Any invalid combination of commands is ignored. Refer to Table 5: Command Codes, and Appendix A, Tables 44, 45, 46 and 47, command interface states - modify and lock tables, for a summary of the command interface. The command interface is split into two types of commands: standard commands and factory PROGRAM commands. The following sections explain in detail how to perform each command. Table 5: Command Codes Hex Code Command 01h Block Lock Confirm 03h Set Configuration Register Confirm 10h Alternative Program Setup 20h Block Erase Setup 2Fh Block Lock-Down Confirm 30h Enhanced Factory Program Setup 35h Double Word Program Setup 40h Program Setup 50h Clear Status Register 56h Quadruple Word Program Setup 60h Block Lock Setup, Block Unlock Setup, Block Lock Down Setup and Set Configuration Register Setup 70h Read Status Register 75h Quadruple Enhanced Factory Program Setup 90h Read Electronic Signature 98h Read CFI Query B0h Program/Erase Suspend C0h Protection Register Program D0h Program/Erase Resume, Block Erase Confirm, Block Unlock Confirm or Enhanced Factory Program Confirm FFh Read Array PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 17 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Command Interface - Standard Commands Command Interface - Standard Commands The following commands are the basic commands used to read, write to and configure the device. Refer to Table 6: Standard Commands, in conjunction with the following descriptions in this section. READ ARRAY Command The READ ARRAY command returns the addressed bank to READ ARRAY mode. One bus write cycle is required to issue the READ ARRAY command and return the addressed bank to READ ARRAY mode. Subsequent READ operations read the addressed location and output the data. A READ ARRAY command can be issued in one bank while programming or erasing in another bank. However, if a READ ARRAY command is issued to a bank currently executing a PROGRAM or ERASE operation the command is executed but the output data is not guaranteed. READ STATUS REGISTER Command The Status Register indicates when a PROGRAM or ERASE operation is complete and the success or failure of operation itself. Issue a READ STATUS REGISTER command to read the Status Register content. The READ STATUS REGISTER command can be issued at any time, even during PROGRAM or ERASE operations. The following READ operations output the content of the Status Register of the addressed bank. The Status Register is latched on the falling edge of CE# or OE# signals, and can be read until CE# or OE# returns to VIH. Either CE# or OE# must be toggled to update the latched data. See Table 9 for the description of the Status Register bits. This mode supports asynchronous or single synchronous reads only. READ ELECTRONIC SIGNATURE Command The READ ELECTRONIC SIGNATURE command reads the manufacturer and device codes, the block locking status, the Protection Register, and the Configuration Register. The READ ELECTRONIC SIGNATURE command consists of one write cycle to an address within one of the banks. A subsequent READ operation in the same bank outputs the manufacturer code, the device code, the protection status of the blocks in the targeted bank, the Protection Register, or the Configuration Register (see Table 7). Dual operations between the parameter bank and the electronic signature locations are not allowed (see Table 15: Dual Operation Limitations). If a READ ELECTRONIC SIGNATURE command is issued in a bank that is executing a PROGRAM or ERASE operation, the bank goes into READ ELECTRONIC SIGNATURE mode, subsequent bus read cycles output the electronic signature data, and the PROGRAM/ERASE CONTROLLER continues to program or erase in the background. This mode supports asynchronous or single synchronous reads only; it does not support page mode or synchronous burst reads. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 18 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Command Interface - Standard Commands READ CFI QUERY Command The READ CFI QUERY command reads data from the common Flash interface (CFI). The READ CFI QUERY command consists of one bus write cycle to an address within one of the banks. Once the command is issued subsequent bus read operations in the same bank read from the common Flash interface. If a READ CFI QUERY command is issued in a bank that is executing a PROGRAM or ERASE operation, the bank goes into READ CFI QUERY mode, subsequent bus read cycles output the CFI data, and the PROGRAM/ERASE CONTROLLER continues to PROGRAM or erase in the background. This mode supports asynchronous or single synchronous reads only; it does not support page mode or synchronous burst reads. The status of the other banks is not affected by the command (see Table 13). After issuing a READ CFI QUERY command, a READ ARRAY command should be issued to the addressed bank to return the bank to READ ARRAY mode. Dual operations between the parameter bank and the CFI memory space are not allowed (see Table 15: Dual Operation Limitations for details). See : Appendix B: Common Flash Interface, Tables 34, 35, 36, 37, 38, 39, 40, 41, 42 and 43 for details on the information contained in the common Flash interface memory area. CLEAR STATUS REGISTER Command The CLEAR STATUS REGISTER command resets (set to ‘0’) error bits SR1, SR3, SR4 and SR5 in the Status Register. One bus write cycle is required to issue the CLEAR STATUS REGISTER command. The CLEAR STATUS REGISTER command does not change the read mode of the bank. The error bits in the Status Register do not automatically return to ‘0’ when a new command is issued. The error bits in the Status Register should be cleared before attempting a new PROGRAM or ERASE command. BLOCK ERASE Command The BLOCK ERASE command erases a block. It sets all the bits within the selected block to 1. All previous data in the block is lost. If the block is protected then the ERASE operation aborts, the data in the block does not change, and the Status Register outputs the error. The BLOCK ERASE command can be issued at any moment, regardless of whether the block has been programmed or not. Two bus write cycles are required to issue the command: • The first bus cycle sets up the ERASE command • The second latches the block address in the PROGRAM/ERASE CONTROLLER and starts it If the second bus cycle is not Write Erase Confirm (D0h), Status Register bits SR4 and SR5 are set and the command aborts. Erase aborts if Reset turns to VIL. As data integrity cannot be guaranteed when the ERASE operation is aborted, the block must be erased again. Once the command is issued, the device outputs the Status Register data when any address within the bank is read. At the end of the operation the bank remains in READ STATUS REGISTER mode until a READ ARRAY, READ CFI QUERY, or READ ELECTRONIC SIGNATURE command is issued. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 19 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Command Interface - Standard Commands During erase operations the bank containing the block being erased only accepts the READ ARRAY, READ STATUS REGISTER, READ ELECTRONIC SIGNATURE, READ CFI QUERY and the PROGRAM/ERASE SUSPEND commands; all other commands are ignored. Refer to Section for detailed information about simultaneous operations allowed in banks not being erased. Typical erase times are given in Table 17: Program, Erase Times and Endurance Cycles. See Appendix C: Flowcharts and Pseudo Codes, Figure 24: BLOCK ERASE Flowchart and Pseudo Code for a suggested flowchart for using the BLOCK ERASE command. PROGRAM Command The memory array can be programmed word-by-word. Only one word in one bank can be programmed at any one time. If the block is protected, the PROGRAM operation aborts, the data in the block does not change, and the Status Register outputs the error. Two bus write cycles are required to issue the PROGRAM command: • The first bus cycle sets up the PROGRAM command • The second latches the address and the data to be written and starts the PROGRAM/ ERASE CONTROLLER After programming has started, read operations in the bank being programmed output the Status Register content. During PROGRAM operations the bank being programmed only accepts the READ ARRAY, READ STATUS REGISTER, READ ELECTRONIC SIGNATURE, READ CFI QUERY and the PROGRAM/ERASE SUSPEND commands. Refer to Section for detailed information about simultaneous operations allowed in banks not being programmed. Typical program times are given in Table 17: Program, Erase Times and Endurance Cycles. Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the PROGRAM operation is aborted, the memory location must be reprogrammed. See , Figure 20: Program Flowchart and Pseudo Code for the flowchart for using the PROGRAM command. PROGRAM/ERASE SUSPEND Command The PROGRAM/ERASE SUSPEND command pauses a PROGRAM or BLOCK ERASE operation. One bus write cycle is required to issue the PROGRAM/ERASE SUSPEND command. Once the PROGRAM/ERASE CONTROLLER has paused bits SR7, SR6 and/ or SR2 of the Status Register are set to ‘1’. The command can be addressed to any bank. During PROGRAM/ERASE SUSPEND the command interface accepts the PROGRAM/ ERASE RESUME, READ ARRAY (cannot read the erase-suspended block or the PROGRAM-suspended word), READ STATUS REGISTER, READ ELECTRONIC SIGNATURE, CLEAR STATUS REGISTER, and READ CFI QUERY commands. In addition, if the suspended operation is erase then the SET CONFIGURATION REGISTER, PROGRAM, BLOCK LOCK, BLOCK LOCK-DOWN or BLOCK UNLOCK commands are also accepted. The block being erased may be protected by issuing the BLOCK LOCK, or BLOCK LOCKDOWN commands. Only the blocks not being erased may be read or programmed correctly. When the PROGRAM/ERASE RESUME command is issued the operation completes. Refer to Section for detailed information about simultaneous operations allowed during PROGRAM/ERASE SUSPEND. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 20 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Command Interface - Standard Commands During a PROGRAM/ERASE SUSPEND, the device is placed in standby mode by taking Chip Enable to VIH. PROGRAM/ERASE is aborted if Reset turns to VIL. See Appendix C: Flowcharts and Pseudo Codes, Figure 23: PROGRAM SUSPEND STATUS and RESUME Flowchart and Pseudo Code, and Figure 25: ERASE SUSPEND and RESUME Flowchart and Pseudo Code for flowcharts for using the PROGRAM/ERASE SUSPEND command. PROGRAM/ERASE RESUME Command The PROGRAM/ERASE RESUME command restarts the PROGRAM/ERASE CONTROLLER after a PROGRAM/ERASE SUSPEND command has paused it. One bus write cycle is required to issue the command. The command can be written to any address. The PROGRAM/ERASE RESUME command does not change the read mode of the banks. If the suspended bank is in READ STATUS REGISTER, READ ELECTRONIC SIGNATURE, or READ CFI QUERY mode the bank remains in that mode and outputs the corresponding data. If the bank is in READ ARRAY mode, subsequent READ operations output invalid data. If a PROGRAM command is issued during a block erase suspend, the ERASE cannot be resumed until the programming operation has completed. It is possible to accumulate suspend operations. For example, it is possible to suspend an ERASE operation, start a programming operation, suspend the programming operation, and then read the array. See , Figure 23: PROGRAM SUSPEND STATUS and RESUME Flowchart and Pseudo Code and Figure 25: ERASE SUSPEND and RESUME Flowchart and Pseudo Code for flowcharts for using the PROGRAM/ERASE RESUME command. PROTECTION REGISTER PROGRAM Command The PROTECTION REGISTER PROGRAM command programs the 128-bit user OTP segment of the Protection Register and the Protection Register lock. The segment is programmed 16 bits at a time. When shipped, all bits in the segment are set to ‘1’. The user can only program the bits to ‘0’. Two write cycles are required to issue the PROTECTION REGISTER PROGRAM command: • The first bus cycle sets up the PROTECTION REGISTER PROGRAM command. • The second latches the address and the data to be written to the Protection Register and starts the PROGRAM/ERASE CONTROLLER. Read operations output the Status Register content after the programming has started. The segment can be protected by programming bit 1 of the Protection Lock Register (see Figure 5: Protection Register Memory Map). Attempting to program a previously protected Protection Register results in a Status Register error. The protection of the Protection Register is not reversible. The PROTECTION REGISTER PROGRAM cannot be suspended. Dual operations between the parameter bank and the Protection Register memory space are not allowed (see Table 15: Dual Operation Limitations). SET CONFIGURATION REGISTER Command The SET CONFIGURATION REGISTER command writes a new value to the Configuration Register, which defines the burst length, type, X latency, synchronous/asynchronous read mode, and the valid Clock edge configuration. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 21 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Command Interface - Standard Commands Two bus write cycles are required to issue the SET CONFIGURATION REGISTER command: • The first cycle writes the setup command and the address corresponding to the Configuration Register content. • The second cycle writes the Configuration Register data and the confirm command. Read operations output the memory array content after the SET CONFIGURATION REGISTER command is issued. The value for the Configuration Register is always presented on A0-A15. CR0 is on A0, CR1 on A1, etc.; the other address bits are ignored. BLOCK LOCK Command The BLOCK LOCK command locks a block and prevents PROGRAM or ERASE operations from changing the data in it. All blocks are locked at power-up or reset. Two bus write cycles are required to issue the BLOCK LOCK command: • The first bus cycle sets up the BLOCK LOCK command. • The second bus write cycle latches the block address. The lock status can be monitored for each block using the READ ELECTRONIC SIGNATURE command. Table 16 shows the lock status after issuing a BLOCK LOCK command. The block lock bits are volatile; once set they remain set until a hardware reset or powerdown/power-up. They are cleared by a BLOCK UNLOCK command. Refer to Section : Block Locking for a detailed explanation. See , Figure 26: Locking Operations Flowchart and Pseudo Code for a flowchart for using the Lock command. BLOCK UNLOCK Command The BLOCK UNLOCK command unlocks a block, allowing the block to be programmed or erased. Two bus write cycles are required to issue the BLOCK UNLOCK command: • The first bus cycle sets up the BLOCK UNLOCK command. • The second bus write cycle latches the block address. The lock status can be monitored for each block using the READ ELECTRONIC SIGNATURE command. Table 16 shows the protection status after issuing a BLOCK UNLOCK command. Refer to Section : Block Locking for a detailed explanation and , Figure 26: Locking Operations Flowchart and Pseudo Code for a flowchart for using the Unlock command. BLOCK LOCK-DOWN Command A locked or unlocked block can be locked down by issuing the BLOCK LOCK-DOWN command. A locked-down block cannot be programmed or erased, or have its protection status changed when WPE is low, VIL. When WP# is high, VIH, the lock-down function is disabled and the locked blocks can be individually unlocked by the BLOCK UNLOCK command. Two bus write cycles are required to issue the BLOCK LOCK-DOWN command: • The first bus cycle sets up the BLOCK LOCK command. • The second bus write cycle latches the block address. The lock status can be monitored for each block using the READ ELECTRONIC SIGNATURE command. Locked-down blocks revert to the locked (and not locked-down) state when the device is reset on power-down. Table 16 shows the lock status after issuing a PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 22 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Command Interface - Standard Commands BLOCK LOCK-DOWN command. Refer to Section : Block Locking for a detailed explanation and Appendix C: Flowcharts and Pseudo Codes, Figure 26: Locking Operations Flowchart and Pseudo Code for a flowchart for using the Lock-Down command. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 23 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Command Interface - Standard Commands Table 6: Standard Commands Cycles Bus operations1 Commands 1st cycle 2nd cycle Op. Add Data Op. Add Data Read Array 1+ Write BKA FFh Read WA RD Read Status Register 1+ Write BKA 70h Read BKA2 SRD Read BKA2 ESD Read BKA2 QD 20h Write BA D0h 40h or 10h Write WA PD 1+ Read Electronic Signature Write BKA 90h Read CFI Query 1+ Write BKA 98h Clear Status Register 1 Write X 50h Block Erase 2 Write BKA or BA3 WA3 Program 2 Write BKA or Program/Erase Suspend 1 Write X B0h Program/Erase Resume 1 Write X D0h Protection Register Program 2 Write PRA C0h Write PRA PRD Set Configuration Register 2 Write CRD 60h Write CRD 03h Block Lock 2 Write BKA or BA3 60h Write BA 01h Write BKA or BA3 60h Write BA D0h BKA or BA3 60h Write BA 2Fh 2 Block Unlock 2 Block Lock-Down Notes: Write 1. X = ‘don't care’, WA = Word Address in targeted bank, RD = READ DATA, SRD = Status Register Data, ESD = Electronic Signature Data, QD = Query Data, BA = Block Address, BKA = Bank Address, PD = PROGRAM Data, PRA = Protection Register Address, PRD = Protection Register Data, CRD = Configuration Register Data. 2. Must be same bank as in the first cycle. The signature addresses are listed in Table 7. 3. Any address within the bank can be used. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 24 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Command Interface - Standard Commands Table 7: Electronic Signature Codes Code Address (h) Bank address + 00 0020 Top Bank address + 01 8814 (M58WR032KT) 8810 (M58WR064KT) Bottom Bank address + 01 8815 (M58WR032KB) 8811 (M58WR064KB) Locked Block address + 02 0001 Manufacturer code Device code Block protection Data (h) Unlocked 0000 Locked and locked-down 0003 Unlocked and locked-down 0002 Reserved Bank address + 03 Reserved Configuration Register Bank address + 05 CR1 Bank address + 80 0002 Protection Register lock Numonyx factory default 0000 OTP area permanently locked Protection Register Notes: Figure 5: Bank address + 81 Bank address + 84 Unique device number Bank address + 85 Bank address + 8C OTP Area 1. CR = Configuration Register. Protection Register Memory Map PROTECTION REGISTER 8Ch User Programmable OTP 85h 84h Unique device number 81h 80h Protection Register Lock 1 0 AI08149 PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 25 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Command Interface - Factory PROGRAM Commands Command Interface - Factory PROGRAM Commands The factory PROGRAM commands are specifically designed to speed up programming. They require VPP to be at VPPH. Refer to Table 8: Factory Program Commands in conjunction with the descriptions in this section. The use of factory PROGRAM commands requires certain operating conditions: • VPP must be set to VPPH. • VDD must be within operating range. • Ambient temperature, TA must be 25°C ± 5°C. • The targeted block must be unlocked. DOUBLE WORD PROGRAM Command The DOUBLE WORD PROGRAM command improves the programming throughput by writing a page of two adjacent words in parallel. The two words must only differ for the address A0. If the block is protected, then the DOUBLE WORD PROGRAM operation aborts, the data in the block does not change, and the Status Register outputs the error. VPP must be set to VPPH during DOUBLE WORD PROGRAM, otherwise the command is ignored and the Status Register does not output any error. Three bus write cycles are necessary to issue the DOUBLE WORD PROGRAM command: • The first bus cycle sets up the DOUBLE WORD PROGRAM command. • The second bus cycle latches the address and the data of the first word to be written. • The third bus cycle latches the address and the data of the second word to be written and starts the PROGRAM/ERASE CONTROLLER. READ operations in the bank being programmed output the Status Register content after the programming has started. During DOUBLE WORD PROGRAM operations the bank being programmed only accepts the READ ARRAY, READ STATUS REGISTER, READ ELECTRONIC SIGNATURE and READ CFI QUERY commands; all other commands are ignored. Dual operations are not supported during DOUBLE WORD PROGRAM operations and the command cannot be suspended. Typical program times are given in Table 17: Program, Erase Times and Endurance Cycles. Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the PROGRAM operation is aborted, the memory locations must be reprogrammed. See Appendix C: Flowcharts and Pseudo Codes, Figure 21: DOUBLE WORD PROGRAM Flowchart and Pseudo Code for the flowchart for using the DOUBLE WORD PROGRAM command. QUADRUPLE WORD PROGRAM Command The QUADRUPLE WORD PROGRAM command improves the programming throughput by writing a page of four adjacent words in parallel. The four words must only differ for the addresses A0 and A1. VPP must be set to VPPH during QUADRUPLE WORD PROGRAM, otherwise the command is ignored and the Status Register does not output any error. If the block is protected, then the QUADRUPLE WORD PROGRAM operation aborts, the data in the block does not change, and the Status Register outputs the error. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 26 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Command Interface - Factory PROGRAM Commands Five bus write cycles are necessary to issue the QUADRUPLE WORD PROGRAM command: • The first bus cycle sets up the DOUBLE WORD PROGRAM command. • The second bus cycle latches the address and the data of the first word to be written. • The third bus cycle latches the address and the data of the second word to be written. • The fourth bus cycle latches the address and the data of the third word to be written. • The fifth bus cycle latches the address and the data of the fourth word to be written and starts the PROGRAM/ERASE CONTROLLER. READ operations to the bank being programmed output the Status Register content after the programming has started. Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the PROGRAM operation is aborted, the memory locations must be reprogrammed. During QUADRUPLE WORD PROGRAM operations the bank being programmed only accepts the READ ARRAY, READ STATUS REGISTER, READ ELECTRONIC SIGNATURE and READ CFI QUERY commands; all other commands are ignored. Dual operations are not supported during QUADRUPLE WORD PROGRAM operations and the command cannot be suspended. Typical program times are given in Table 17: Program, Erase Times and Endurance Cycles. See , Figure 22: QUADRUPLE WORD PROGRAM Flowchart and Pseudo Code for the flowchart for using the QUADRUPLE WORD PROGRAM command. ENHANCED FACTORY PROGRAM Command The ENHANCED FACTORY PROGRAM command programs large streams of data within any one block. It greatly reduces the total programming time when a large number of words are written to a block at any one time. Dual operations are not supported during the ENHANCED FACTORY PROGRAM operation and the command cannot be suspended. For optimum performance the ENHANCED FACTORY PROGRAM commands should be limited to a maximum of 10 PROGRAM/ERASE cycles per block. If this limit is exceeded the internal algorithm continues to work properly but some degradation in performance is possible. Typical program times are given in Table 17. If the block is protected then the ENHANCED FACTORY PROGRAM operation aborts, the data in the block does not change, and the Status Register outputs the error. The ENHANCED FACTORY PROGRAM command has four phases: the setup phase, the PROGRAM phase to program the data to the memory, the verify phase to check that the data has been correctly programmed and reprogram if necessary and the exit phase. Refer to Table 8: Factory Program Commands, and Figure 28: ENHANCED FACTORY PROGRAM Flowchart. Setup Phase The ENHANCED FACTORY PROGRAM command requires two bus write operations to initiate the command: • The first bus cycle sets up the ENHANCED FACTORY PROGRAM command • The second bus cycle confirms the command. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 27 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Command Interface - Factory PROGRAM Commands The Status Register P/EC bit SR7 should be read to check that the P/EC is ready. After the confirm command is issued, read operations output the Status Register data. The READ STATUS REGISTER command must not be issued or it is interpreted as data to program. If the second bus cycle is not EFP confirm (D0h), Status Register bits SR4 and SR5 are set and the command aborts. VPP value must be in the VPPH range during the confirm command, otherwise SR4 and SR3 are set and command are aborted. PROGRAM Phase The PROGRAM phase requires n+1 cycles, where n is the number of words (refer to Table 8: Factory Program Commands, and Figure 28: ENHANCED FACTORY PROGRAM Flowchart). Three successive steps are required to issue and execute the PROGRAM phase of the command: 1. Use one bus write operation to latch the start address and the first word to be programmed, where the start address is the location of the first data to be programmed. The Status Register Bank Write Status bit SR0 should be read to check that the P/EC is ready for the next word. 2. Each subsequent word to be programmed is latched with a new bus write operation. The address can either remain the start address, in which case the P/EC increments the address location. Or the address can be incremented, in which case the P/EC jumps to the new address. If any address is given that is not in the same block as the start address, the PROGRAM phase terminates and the verify phase begins. The Status Register bit SR0 should be read between each bus write cycle to check that the P/EC is ready for the next word. 3. Finally, after all words have been programmed, write one bus write operation to any address outside the block containing the start address, to terminate the programming phase. The memory is now set to enter the verify phase. Verify Phase The verify phase is similar to the PROGRAM phase in that all words must be resent to the memory for them to be checked against the programmed data. The PROGRAM/ERASE CONTROLLER checks the stream of data with the data that was programmed in the PROGRAM phase and reprograms the memory location, if necessary. Three successive steps are required to execute the verify phase of the command: 1. Use one bus write operation to latch the start address and the first word to be verified. The Status Register bit SR0 should be read to check that the PROGRAM/ERASE CONTROLLER is ready for the next word. 2. Each subsequent word to be verified is latched with a new bus write operation. The words must be written in the same order as in the PROGRAM phase. The address can remain the start address or be incremented. If any address that is not in the same block as the start address is given, the verify phase terminates. Status Register bit SR0 should be read to check that the P/EC is ready for the next word. 3. Finally, after all words have been verified, write one bus write operation to any address outside the block containing the start address, to terminate the verify phase. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 28 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Command Interface - Factory PROGRAM Commands If the verify phase is successfully completed, the memory remains in READ STATUS REGISTER mode. If the PROGRAM/ERASE CONTROLLER fails to reprogram a given location, the error is signaled in the Status Register. Exit Phase Status Register P/EC bit SR7 set to ‘1’ indicates that the device has returned to read mode. A full Status Register check should be done to ensure that the block has been successfully programmed. See Section : Status Register for more details. QUADRUPLE ENHANCED FACTORY PROGRAM Command The QUADRUPLE ENHANCED FACTORY PROGRAM command programs one or more pages of four adjacent words in parallel. The four words must only differ for the addresses A0 and A1. VPP must be set to VPPH during the QUADRUPLE ENHANCED FACTORY PROGRAM, otherwise the command is ignored and the Status Register does not output any error. Dual operations are not supported during QUADRUPLE ENHANCED FACTORY PROGRAM operations and the command cannot be suspended. If the block is protected then the QUADRUPLE ENHANCED FACTORY PROGRAM operation aborts, the data in the block does not change, and the Status Register outputs the error. The QUADRUPLE ENHANCED FACTORY PROGRAM command has four phases: the setup phase, the load phase where the data is loaded into the buffer, the combined PROGRAM and VERIFY phase where the loaded data is programmed to the memory and then automatically checked and reprogrammed if necessary and the exit phase. Unlike the ENHANCED FACTORY PROGRAM it is not necessary to resubmit the data for the verify phase. The load phase and the PROGRAM and VERIFY phase can be repeated to program any number of pages within the block. Setup Phase The QUADRUPLE ENHANCED FACTORY PROGRAM command requires one bus write operation to initiate the load phase. After the setup command is issued, READ operations output the Status Register data. The READ STATUS REGISTER command must not be issued or it is interpreted as data to program. Load Phase The load phase requires 4 cycles to load the data (refer to Table 8: Factory Program Commands and Figure 29: QUADRUPLE ENHANCED FACTORY PROGRAM Flowchart). Once the first word of each page is written it is impossible to exit the load phase until all four words have been written. Two successive steps are required to issue and execute the load phase of the QUADRUPLE ENHANCED FACTORY PROGRAM command. 1. Use one bus write operation to latch the start address and the first word of the first page to be programmed, where the start address is the location of the first data to be programmed. For subsequent pages the first word address can remain the start address (in which case the next page is programmed) or can be any address in the same block. If any address is given that is not in the same block as the start address, the device enters the exit phase. For the first load phase Status Register bit SR7 should be read after the first word has been issued to check that the command has been accepted (bit SR7 set to ‘0’). This check is not required for subsequent load phases. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 29 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Command Interface - Factory PROGRAM Commands 2. Each subsequent word to be programmed is latched with a new bus write operation. The address is only checked for the first word of each page as the order of the words to be programmed is fixed. The memory is now set to enter the PROGRAM and VERIFY phase. PROGRAM and VERIFY Phase In the PROGRAM and VERIFY phase the four words that were loaded in the load phase are programmed in the memory array and then verified by the PROGRAM/ERASE CONTROLLER. If any errors are found, the PROGRAM/ERASE CONTROLLER reprograms the location. During this phase the Status Register shows that the PROGRAM/ ERASE CONTROLLER is busy, the Status Register bit SR7 is set to ‘0’, and that the device is not waiting for new data (Status Register bit SR0 set to ‘1’). When Status Register bit SR0 is set to ‘0’ the PROGRAM and VERIFY phase has terminated. Once the verify phase has successfully completed, subsequent pages in the same block can be loaded and programmed. The device returns to the beginning of the load phase by issuing one bus write operation to latch the address and the first of the four new words to be programmed. Exit Phase Finally, after all the pages have been programmed, write one bus write operation to any address outside the block containing the start address, to terminate the load and PROGRAM and VERIFY phases. Status Register bit SR7 set to ‘1’ and bit SR0 set to ‘0’ indicate that the QUADRUPLE ENHANCED FACTORY PROGRAM command has terminated. A full Status Register check should be done to ensure that the block has been successfully programmed. See Section : Status Register for more details. If the PROGRAM and VERIFY phase has successfully completed the memory returns to read mode. If the P/EC fails to program and reprogram a given location, the error is signaled in the Status Register. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 30 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Command Interface - Factory PROGRAM Commands Table 8: Factory Program Commands Cycles Bus write operations1 Command Phase 1st 2nd 3rd Final -1 Add Data Add Data Add Data Final Add Data Add Data PD4 Double Word Program2 3 BKA or WA13 35h WA1 PD1 WA2 PD2 Quadruple Word Program4 5 BKA or WA13 56h WA1 PD1 WA2 PD2 WA3 PD3 WA4 Setup, Program 2+n+ BKA or 1 WA13 30h BA or WA16 D0h WA1 PD1 WAn8 PAn NOT WA17 Verify, Exit n+1 WA17 PD1 WA28 PD2 WA38 PD3 WAn8 PAn NOT WA17 5 BKA or WA13 75h WA17 PD1 WA29 PD2 WA37 PD3 WA49 PD4 WA4i9 PD4i Enhanced Factory Program 5 Quadruple Setup, Enhanced first Load Factory First Program Program 4,5 & Verify Subsequent Loads Automatic 4 WA1i7 PD1i WA2i9 1 Notes: WA3i9 PD3i Automatic Subsequent Program & Verify Exit PD2i NOT WA17 1. WA = Word Address in targeted bank, BKA = Bank Address, PD = Program Data, BA = Block Address. 2. Word addresses 1 and 2 must be consecutive Addresses differing only for A0. 3. Any address within the bank can be used. 4. Word addresses 1,2,3 and 4 must be consecutive addresses differing only for A0 and A1. 5. A bus read must be done between each write cycle where the data is programmed or verified to read the Status Register and check that the memory is ready to accept the next data. n = number of words, i = number of pages to be programmed. 6. Any address within the block can be used. 7. WA1 is the start address. NOT WA1 is any address that is not in the same block as WA1. 8. Address can remain starting address WA1 or be incremented. 9. Address is only checked for the first word of each page as the order to program the words in each page is fixed so subsequent words in each page can be written to any address. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 31 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Status Register Status Register The Status Register provides information on the current or previous PROGRAM or ERASE operations. Issue a READ STATUS REGISTER command to read the contents of the Status Register (refer to Section : READ STATUS REGISTER Command for more details). To output the contents, the Status Register is latched and updated on the falling edge of the Chip Enable or Output Enable signals and can be read until Chip Enable or Output Enable returns to VIH. The Status Register can only be read using single asynchronous or single synchronous reads. Bus read operations from any address within the bank always read the Status Register during PROGRAM and ERASE operations, as long as no READ ARRAY command has been issued. The various bits convey information about the status and any errors of the operation. Bits SR7, SR6, SR2 and SR0 provide information on the status of the device and are set and reset by the device. Bits SR5, SR4, SR3 and SR1 provide information on errors. They are set by the device but must be reset by issuing a CLEAR STATUS REGISTER command or a hardware reset. If an error bit is set to ‘1’ the Status Register should be reset before issuing another command. SR7 to SR1 refer to the status of the device while SR0 refers to the status of the addressed bank. The bits in the Status Register are summarized in Table 9: Status Register Bits. Refer to Table 9 in conjunction with the descriptions in the following sections. PROGRAM/ERASE CONTROLLER STATUS Bit (SR7) The PROGRAM/ERASE CONTROLLER status bit indicates whether the PROGRAM/ERASE CONTROLLER is active or inactive in any bank. When the PROGRAM/ERASE CONTROLLER status bit is Low (set to ‘0’), the PROGRAM/ERASE CONTROLLER is active; when the bit is High (set to ‘1’), the PROGRAM/ERASE CONTROLLER is inactive, and the device is ready to process a new command. The PROGRAM/ERASE CONTROLLER status is Low immediately after a PROGRAM/ ERASE SUSPEND command is issued until the PROGRAM/ERASE CONTROLLER pauses. After the PROGRAM/ERASE CONTROLLER pauses the bit is High. During PROGRAM and ERASE operations the PROGRAM/ERASE CONTROLLER status bit can be polled to find the end of the operation. Other bits in the Status Register should not be tested until the PROGRAM/ERASE CONTROLLER completes the operation and the bit is High. After the PROGRAM/ERASE CONTROLLER completes its operation the ERASE STATUS, PROGRAM status, VPP status and block lock status bits should be tested for errors. ERASE SUSPEND STATUS Bit (SR6) The ERASE SUSPEND status bit indicates that an ERASE operation has been suspended or is going to be suspended in the addressed block. When the ERASE SUSPEND status bit is High (set to ‘1’), a PROGRAM/ERASE SUSPEND command has been issued and the memory is waiting for a PROGRAM/ERASE RESUME command. The ERASE SUSPEND status should only be considered valid when the PROGRAM/ ERASE CONTROLLER status bit is High (PROGRAM/ERASE CONTROLLER inactive). SR7 is set within the erase suspend latency time of the PROGRAM/ERASE SUSPEND command being issued, therefore, the memory may still complete the operation rather than entering the suspend mode. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 32 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Status Register When a PROGRAM/ERASE RESUME command is issued the ERASE SUSPEND status bit returns Low. ERASE STATUS Bit (SR5) The ERASE STATUS bit identifies if the memory has failed to verify that the block has erased correctly. When the ERASE STATUS bit is High (set to ‘1’), the PROGRAM/ERASE CONTROLLER has applied the maximum number of pulses to the block and still failed to verify that it has erased correctly. The ERASE STATUS bit should be read once the PROGRAM/ERASE CONTROLLER status bit is High (PROGRAM/ERASE CONTROLLER inactive). Once set High, the ERASE STATUS bit can only be reset Low by a CLEAR STATUS REGISTER command or a hardware reset. If set High it should be reset before a new PROGRAM or ERASE command is issued, otherwise the new command appears to fail. PROGRAM STATUS Bit (SR4) The PROGRAM status bit identifies a program failure or an attempt to program a ‘1’ to an already programmed bit when VPP = VPPH. When the PROGRAM status bit is High (set to ‘1’), the PROGRAM/ERASE CONTROLLER has applied the maximum number of pulses to the byte and still failed to verify that it has programmed correctly. After an attempt to program a '1' to an already programmed bit, the PROGRAM status bit SR4 only goes High (set to '1') if VPP = VPPH (if VPP is different from VPPH, SR4 remains Low (set to '0') and the attempt is not shown). The PROGRAM status bit should be read once the PROGRAM/ERASE CONTROLLER status bit is High (PROGRAM/ERASE CONTROLLER inactive). Once set High, the PROGRAM status bit can only be reset Low by a CLEAR STATUS REGISTER command or a hardware reset. If set High it should be reset before a new command is issued, otherwise the new command appears to fail. VPP Status Bit (SR3) The VPP status bit identifies an invalid voltage on the VPP pin during PROGRAM and ERASE operations. The VPP pin is only sampled at the beginning of a PROGRAM or ERASE operation. Indeterminate results can occur if VPP becomes invalid during an operation. When the VPP status bit is Low (set to ‘0’), the voltage on the VPP pin was sampled at a valid voltage. When the VPP status bit is High (set to ‘1’), the VPP pin has a voltage that is below the VPP lockout voltage, VPPLK, the memory is protected and PROGRAM and ERASE operations cannot be performed. Once set High, the VPP status bit can only be reset Low by a CLEAR STATUS REGISTER command or a hardware reset. If set High it should be reset before a new PROGRAM or ERASE command is issued, otherwise the new command appears to fail. PROGRAM SUSPEND STATUS Bit (SR2) The PROGRAM SUSPEND STATUS bit indicates that a PROGRAM operation has been suspended in the addressed block. When the PROGRAM SUSPEND STATUS bit is High (set to ‘1’), a PROGRAM/ERASE SUSPEND command has been issued and the memory is PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 33 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Status Register waiting for a PROGRAM/ERASE RESUME command. The PROGRAM SUSPEND STATUS should only be considered valid when the PROGRAM/ERASE CONTROLLER status bit is High (PROGRAM/ERASE CONTROLLER inactive). SR2 is set within the program suspend latency time of the PROGRAM/ERASE SUSPEND command being issued, therefore, the memory may still complete the operation rather than entering the suspend mode. When a PROGRAM/ERASE RESUME command is issued, the PROGRAM SUSPEND STATUS bit returns Low. Block Protection Status Bit (SR1) The block protection status bit can be used to identify if a PROGRAM or BLOCK ERASE operation has tried to modify the contents of a locked or locked-down block. When the block protection status bit is High (set to ‘1’), a PROGRAM or ERASE operation has been attempted on a locked or locked-down block. Once set High, the block protection status bit can only be reset Low by a CLEAR STATUS REGISTER command or a hardware reset. If set High it should be reset before a new command is issued, otherwise the new command appears to fail. Bank Write/Multiple Word PROGRAM Status Bit (SR0) The bank write status bit indicates whether the addressed bank is programming or erasing. In ENHANCED FACTORY PROGRAM mode the multiple word PROGRAM bit shows if a word has finished programming or verifying depending on the phase. The bank write status bit should only be considered valid when the PROGRAM/ERASE CONTROLLER status SR7 is Low (set to ‘0’). When both the PROGRAM/ERASE CONTROLLER status bit and the bank write status bit are Low (set to ‘0’), the addressed bank is executing a PROGRAM or ERASE operation. When the PROGRAM/ERASE CONTROLLER status bit is Low (set to ‘0’) and the bank write status bit is High (set to ‘1’), a PROGRAM or ERASE operation is being executed in a bank other than the one being addressed. In ENHANCED FACTORY PROGRAM mode if the multiple word program status bit is Low (set to ‘0’), the device is ready for the next word. If the multiple word program status bit is High (set to ‘1’) the device is not ready for the next word. Refer to : Appendix C: Flowcharts and Pseudo Codes for using the Status Register. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 34 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Status Register Table 9: Status Register Bits Bit SR7 SR6 SR5 SR4 SR3 SR2 SR1 SR0 Name P/EC status Erase suspend status Type Logic level1 Status '1' Ready '0' Busy '1' Erase suspended '0' Erase in progress or completed '1' Erase error '0' Erase success '1' Program error '0' Program success '1' VPP invalid, abort '0' VPP OK '1' Program suspended '0' Program in progress or completed '1' Program/erase on protected block, abort '0' No operation to protected blocks '1' SR7 = ‘1’ Not allowed SR7 = ‘0’ Program or erase operation in a bank other than the addressed bank SR7 = ‘1’ No program or erase operation in the device SR7 = ‘0’ Program or erase operation in addressed bank SR7 = ‘1’ Not allowed SR7 = ‘0’ The device is NOT ready for the next word SR7 = ‘1’ The device is exiting EFP SR7 = ‘0’ The device is ready for the next word Status Error Erase status Error Program status Error VPP status Program suspend status Block protection status Status Error Status Bank write status '0' Multiple word program status (enhanced factory program mode) Status '1' '0' Notes: Definition 1. Logic level '1' is High, '0' is Low. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 35 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Configuration Register Configuration Register The Configuration Register configures the type of bus access that the memory performs. Refer to Section : Read Modes for details on READ operations. The Configuration Register is set through the command interface. After a reset or powerup the device is configured for asynchronous page read (CR15 = 1). The Configuration Register bits are described in Table 11. They specify the selection of the burst length, burst type, burst X latency, and the READ operation. Refer to Figures 6 and 7 for examples of synchronous burst configurations. READ Select Bit (CR15) The READ select bit, CR15, switches between asynchronous and synchronous bus read operations. When the read select bit is set to 1, READ operations are asynchronous; when the read select bit is set to 0, READ operations are synchronous. Synchronous burst read is supported in both parameter and main blocks and can be performed across banks. On reset or power-up the read select bit is set to 1 for asynchronous access. X-latency Bits (CR13-CR11) The X-latency bits are used during synchronous READ operations to set the number of clock cycles between the address being latched and the first data becoming available. For correct operation the X-latency bits can only assume the values in Table 11: Configuration Register. Table 10shows how to set the X-latency parameter, taking into account the speed class of the device and the frequency used to read the Flash memory in synchronous mode. Table 10: Latency Settings fmax tKmin X-latency min 30 MHz 33 ns 2 40 MHz 25 ns 3 54 MHz 19 ns 4 66 MHz 15 ns 4 Wait Polarity Bit (CR10) In synchronous burst mode the Wait signal indicates whether the output data are valid or a WAIT state must be inserted. The wait polarity bit is used to set the polarity of the Wait signal. When the wait polarity bit is set to ‘0’ the Wait signal is active Low. When the wait polarity bit is set to ‘1’ the Wait signal is active High. Data Output Configuration Bit (CR9) The Data Output Configuration bit determines whether the output remains valid for one or two clock cycles. When the data output configuration bit is 0 the output data is valid for one clock cycle. When the data output configuration bit is 1 the output data is valid for two clock cycles. The data output configuration depends on the condition: tK > tKQV + tQVK_CPU PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 36 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Configuration Register where tK is the clock period, tQVK_CPU is the data setup time required by the system CPU and tKQV is the clock to data valid time. If this condition is not satisfied, the data output configuration bit should be set to ‘1’ (two clock cycles). Refer to Figure 6: Xlatency and Data Output Configuration Example. Wait Configuration Bit (CR8) In burst mode the Wait bit controls the timing of the Wait output pin, WAIT. When WAIT is asserted, data is not valid and when WAIT is de-asserted, data is valid. When the Wait bit is 0 the Wait output pin is asserted during the wait state. When the Wait bit is 1 the Wait output pin is asserted one clock cycle before the wait state. Burst Type Bit (CR7) The burst type bit configures the sequence of addresses read as sequential or interleaved. When the burst type bit is 0 the memory outputs from interleaved addresses. When the burst type bit is 1 the memory outputs from sequential addresses. See Table 12: Burst Type Definition for the sequence of addresses output from a given starting address in each mode. Valid Clock Edge Bit (CR6) The valid clock edge bit, CR6, configures the active edge of the Clock, CLK, during SYCHRONOUS BURST READ operations. When the valid clock edge bit is 0 the falling edge of the Clock is the active edge. When the Valid Clock Edge bit is 1 the rising edge of the Clock is active. Wrap Burst Bit (CR3) The burst reads can be confined inside the 4 or 8 word boundary (wrap) or overcome the boundary (no wrap). The wrap burst bit selects between wrap and no wrap. When the wrap burst bit is set to ‘0’ the burst read wraps; when it is set to ‘1’ the burst read does not wrap. Burst Length Bits (CR2-CR0) The burst length bits set the number of words to be output during a SYCHRONOUS BURST READ operation as result of a single Address Latch cycle. They can be set for 4 words, 8 words, 16 words or continuous burst, where all the words are read sequentially. In continuous burst mode the burst sequence can cross bank boundaries. In continuous burst mode or in 4, 8, 16 words no-wrap, depending on the starting address, the device asserts the WAIT output to indicate that a delay is necessary before the data is output. If the starting address is aligned to a 4 word boundary no wait states are needed and the WAIT output is not asserted. If the starting address is shifted by 1, 2 or 3 positions from the 4 word boundary, WAIT is asserted for 1, 2 or 3 clock cycles when the burst sequence crosses the first 16 word boundary to indicate that the device needs an internal delay to read the successive words in the array. WAIT is asserted only once during a continuous burst access. See also Table 12: Burst Type Definition. CR14, CR5 and CR4 are reserved for future use. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 37 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Configuration Register Table 11: Bit CR15 CR14 CR13-CR11 Configuration Register Description Read select Value Description 0 Synchronous read 1 Asynchronous read (default at power-on) Reserved X-latency 010 2 clock latency 011 3 clock latency 100 4 clock latency 101 5 clock latency 111 Reserved (default) Other configurations reserved CR10 CR9 CR8 CR7 CR6 CR5-CR4 CR3 CR2-CR0 0 WAIT is active Low 1 WAIT is active High (default) Data output configuration 0 Data held for one clock cycle 1 Data held for two clock cycles (default) Wait configuration 0 WAIT is active during wait state 1 WAIT is active one data cycle before wait state (default) 0 Interleaved 1 Sequential (default) 0 Falling Clock edge 1 Rising Clock edge (default) 0 Wrap 1 No wrap (default) Wait polarity Burst type Valid clock edge Reserved Wrap burst Burst length 001 4 words 010 8 words 011 16 words 111 Continuous (CR7 must be set to ‘1’) (default) PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 38 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Configuration Register Wrap Mode Table 12: Burst Type Definition 4 words 8 words Start add Sequential Interleaved Sequential Interleaved 16 words Sequential Interleaved Continuous burst 0 0-1-2-3 0-1-2-3 0-1-2-3-4-56-7 0-1-2-3-4-56-7 0-1-2-3-4-5-6-70-1-2-3-4-5-68-9-10-11-12-13- 7-8-9-10-11-1214-15 13-14-15 0-1-2-3-4-5-6... 1 1-2-3-0 1-0-3-2 1-2-3-4-5-67-0 1-0-3-2-5-47-6 1-2-3-4-5-6-7-89-10-11-12-1314-15-0 1-0-3-2-5-4-71-2-3-4-5-6-76-9-8-11-10-13- ...15-WAIT-16-1712-15-14 18... 2 2-3-0-1 2-3-0-1 2-3-4-5-6-70-1 2-3-0-1-6-74-5 2-3-4-5-6-7-8-910-11-12-13-1415-0-1 2-3-0-1-6-7-45-10-11-8-9-1415-12-13 3 3-0-1-2 3-2-1-0 3-4-5-6-7-01-2 3-2-1-0-7-65-4 3-4-5-6-7-8-9-10- 3-2-1-0-7-6-53-4-5-6-7...1511-12-13-14-15- 4-11-10-9-8-15WAIT-WAIT0-1-2 14-13-12 WAIT-16-17-18... 7-4-5-6 7-6-5-4 7-0-1-2-3-45-6 7-6-5-4-3-21-0 7-8-9-10-11-127-6-5-4-3-2-113-14-15-0-1-2-3- 0-15-14-13-124-5-6 11-10-9-8 2-3-4-5-6-7...15WAIT-WAIT-1617-18... ... 7 7-8-9-10-11-1213-14-15-WAITWAIT-WAIT-1617... ... 12 12-13-14-15-1617-18... 13 13-14-15-WAIT16-17-18... 14 14-15-WAITWAIT-16-17-18.... 15 15-WAIT-WAITWAIT-16-17-18... PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 39 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Configuration Register Mode Table 12: Burst Type Definition (Continued) 4 words 8 words Start add Sequential Interleaved Sequential Interleaved 16 words Sequential 0 0-1-2-3 0-1-2-3-4-56-7 0-1-2-3-4-5-6-78-9-10-11-12-1314-15 1 1-2-3-4 1-2-3-4-5-67-8 1-2-3-4-5-6-7-89-10-11-12-1314-15-WAIT-16 2 2-3-4-5 2-3-4-5-6-78-9... 2-3-4-5-6-7-8-910-11-12-13-1415-WAIT-WAIT16-17 3 3-4-5-6 3-4-5-6-7-89-10 3-4-5-6-7-8-9-1011-12-13-14-15WAIT-WAITWAIT-16-17-18 7-8-9-10 7-8-9-10-1112-13-14 7-8-9-10-11-1213-14-15-WAITWAIT-WAIT-1617-18-19-20-2122 12 12-13-14-15 12-13-14-1516-17-18-19 12-13-14-15-1617-18-19-20-2122-23-24-25-2627 13 13-14-15WAIT-16 13-14-15WAIT-16-1718-19-20 13-14-15-WAIT16-17-18-19-2021-22-23-24-2526-27-28 14 14-15-WAITWAIT-16-17 14-15-WAITWAIT-16-1718-19-20-21 14-15-WAITWAIT-16-17-1819-20-21-22-2324-25-26-27-2829 15 15-WAITWAIT-WAIT16-17-18 15-WAITWAIT-WAIT16-17-18-1920-21-22 15-WAIT-WAITWAIT-16-17-1819-20-21-22-2324-25-26-27-2829-30 Interleaved Continuous burst Same as for Wrap (Wrap /No Wrap has no effect on Continuous Burst) ... No-wrap 7 ... PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 40 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Configuration Register Figure 6: X-latency and Data Output Configuration Example X-latency 1st cycle 2nd cycle 3rd cycle 4th cycle CLK CE# ADV# A[MAX:0](1) VALID ADDRESS tQVK_CPU tK tKQV DQ[15:0] VALID DATA VALID DATA Ai13422b Notes: Figure 7: 1. AMAX is equal to A20 in the M58WR032KT/B and, to A21 in the M58WR064KT/B. 2. Settings shown: X-latency = 4, data output held for one clock cycle. Wait Configuration Example CE# CLK ADV# A[MAX:0](1) VALID ADDRESS DQ[15:0] VALID DATA VALID DATA NOT VALID VALID DATA WAIT CR8 = '0' CR10 = '0' WAIT CR8 = '1' CR10 = '0' WAIT CR8 = '0' CR10 = '1' WAIT CR8 = '1' CR10 = '1' AI13423b Notes: 1. AMAX is equal to A20 in the M58WR032KT/B and, to A21 in the M58WR064KT/B. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 41 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Read Modes Read Modes Read operations can be performed in two different ways depending on the settings in the Configuration Register. If the clock signal is ‘don’t care’ for the data output, the read operation is asynchronous. If the data output is synchronized with clock, the read operation is synchronous. The read mode and data output format are determined by the Configuration Register (see Section : Configuration Register for details). All banks supports both asynchronous and synchronous read operations. The multiple bank architecture allows read operations in one bank, while write operations are being executed in another (see Tables 13 and 14). ASYCHRONOUS READ Mode In ASYCHRONOUS READ operations the clock signal is ‘don’t care’. The device outputs the data corresponding to the address latched, that is the memory array, Status Register, common Flash interface or electronic signature, depending on the command issued. CR15 in the Configuration Register must be set to ‘1’ for asynchronous operations. In ASYCHRONOUS READ Mode a page of data is internally read and stored in a page buffer. The page has a size of 4 words and is addressed by A0 and A1 address inputs. The address inputs A0 and A1 are not gated by Latch Enable in ASYCHRONOUS READ Mode. The first read operation within the page has a longer access time (Tacc, random access time), and subsequent reads within the same page have much shorter access times. If the page changes then the normal, longer timings apply again. ASYCHRONOUS READ operations can be performed in two different ways, Asynchronous random access read and asynchronous page read. Only asynchronous page read takes full advantage of the internal page storage so different timings are applied. During ASYCHRONOUS READ operations, after a bus inactivity of 150ns, the device automatically switches to automatic standby mode. In this condition the power consumption is reduced to the standby value and the outputs are still driven. In ASYCHRONOUS READ mode, the WAIT signal is always asserted. See Table 23: ASYCHRONOUS READ AC Characteristics, Figure 10: ASYCHRONOUS RANDOM ACCESS READ AC Waveforms and Figure 11: Asynchronous Page Read AC Waveforms for details. SYCHRONOUS BURST READ Mode In SYCHRONOUS BURST READ mode the data is output in bursts synchronized with the clock. It is possible to perform burst reads across bank boundaries. SYCHRONOUS BURST READ mode can only be used to read the memory array. For other read operations, such as READ STATUS REGISTER, read CFI, and READ ELECTRONIC SIGNATURE, SINGLE SYCHRONOUS READ or ASYCHRONOUS RANDOM ACCESS READ must be used. In SYCHRONOUS BURST READ mode the flow of the data output depends on parameters that are configured in the Configuration Register. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 42 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Read Modes A burst sequence is started at the first clock edge (rising or falling depending on valid clock edge bit CR6 in the Configuration Register) after the falling edge of Latch Enable or Chip Enable, whichever occurs last. Addresses are internally incremented and after a delay of 2 to 5 clock cycles (X latency bits CR13-CR11) the corresponding data is output on each clock cycle. The number of words to be output during a SYCHRONOUS BURST READ operation can be configured as 4, 8, 16 words, or continuous (burst length bits CR2-CR0). The data can be configured to remain valid for one or two clock cycles (data output configuration bit CR9). The order of the data output can be modified through the burst type and the wrap burst bits in the Configuration Register. The burst sequence may be configured to be sequential or interleaved (CR7). The burst reads can be confined inside the 4, 8, or 16 word boundary (wrap) or overcome the boundary (no wrap). If the starting address is aligned to the burst length (4, 8, or 16 words) the wrapped configuration has no impact on the output sequence. Interleaved mode is not allowed in continuous burst read mode or with no wrap sequences. A WAIT signal may be asserted to indicate to the system that an output delay occurs. This delay depends on the starting address of the burst sequence. The worst case delay occurs when the sequence is crossing a 16 word boundary and the starting address was at the end of a four word boundary. WAIT is asserted during X latency, the Wait state, and at the end of 4, 8 or, 16 word burst. It is only de-asserted when output data are valid. In continuous burst read mode a Wait state occurs when crossing the first 16 word boundary. If the burst starting address is aligned to a 4 word page, the Wait state does not occur. The WAIT signal can be configured to be active Low or active High by setting CR10 in the Configuration Register. The WAIT signal is meaningful only in SYCHRONOUS BURST READ mode. In other modes, WAIT is always asserted (except for READ ARRAY mode). See Table 24: Synchronous Read AC Characteristics and Figure 12: SYCHRONOUS BURST READ AC Waveforms for details. SYCHRONOUS BURST READ Suspend A SYCHRONOUS BURST READ operation can be suspended, freeing the data bus for other higher priority devices. It can be suspended during the initial access latency time (before data is output), or after the device has output data. When the SYCHRONOUS BURST READ operation is suspended, internal array sensing continues and any previously latched internal data is retained. A burst sequence can be suspended and resumed as often as required as long as the operating conditions of the device are met. A SYCHRONOUS BURST READ operation is suspended when CE# is low and the current address has been latched (on a Latch Enable rising edge or on a valid clock edge). The clock signal is then halted at VIH or at VIL, and OE# goes high. When OE# becomes low again and the clock signal restarts, the SYCHRONOUS BURST READ operation is resumed exactly where it stopped. WAIT being gated by CE# remains active and does not revert to high-impedance when OE# goes high. Therefore, if two or more devices are connected to the system’s READY signal, to prevent bus contention the WAIT signal of the Flash memory should not be directly connected to the system’s READY signal. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 43 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Read Modes See Table 24: Synchronous Read AC Characteristics and Figure 14: SYCHRONOUS BURST READ Suspend AC Waveforms for details. SINGLE SYCHRONOUS READ Mode SINGLE SYCHRONOUS READ operations are similar to SYCHRONOUS BURST READ operations except that only the first data output after the X latency is valid. Synchronous single reads are used to read the electronic signature, Status Register, CFI, block protection status, Configuration Register status or Protection Register status. When the addressed bank is in read CFI, READ STATUS REGISTER or READ ELECTRONIC SIGNATURE mode, the WAIT signal is always asserted. See Table 24: Synchronous Read AC Characteristics and Figure 13: SINGLE SYCHRONOUS READ AC Waveforms for details. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 44 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Dual Operations and Multiple Bank Architecture Dual Operations and Multiple Bank Architecture The multiple bank architecture of the M58WRxxxKT/B provides flexibility for software developers by allowing code and data to be split with 4Mb granularity. The dual operations feature simplifies the software management of the device and allows code to be executed from one bank while another bank is being programmed or erased. The dual operations feature means that while programming or erasing in one bank, read operations are possible in another bank with zero latency (only one bank at a time is allowed to be in PROGRAM or ERASE mode). If a Read operation is required in a bank that is programming or erasing, the PROGRAM or ERASE operation can be suspended. Also, if the suspended operation is ERASE then a PROGRAM command can be issued to another block. This means the device can have one block in ERASE SUSPEND mode, one programming, and other banks in read mode. Bus read operations are allowed in another bank between setup and confirm cycles of PROGRAM or ERASE operations. The combination of these features means that read operations are possible at any moment. Dual operations between the parameter bank and either the CFI, OTP, or the electronic signature memory space are not allowed. Table 15, however, shows dual operations that are allowed between the CFI, OTP, electronic signature locations, and the memory array. Tables 13 and 14 show the dual operations possible in other banks and in the same bank. For a complete list of possible commands refer to Appendix A: Command Interface State Tables. Table 13: Dual Operations Allowed in Other Banks Commands allowed in another bank Read Array Read Status Register Read CFI Query Read Electronic Signature Idle Yes Yes Yes Programming Yes Yes Erasing Yes Program suspended Erase suspended Status of bank Program Block Erase Program/ Erase Suspend Program/ Erase Resume Yes Yes Yes Yes Yes Yes Yes – – Yes – Yes Yes Yes – – Yes – Yes Yes Yes Yes – – – Yes Yes Yes Yes Yes Yes – – Yes PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 45 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Dual Operations and Multiple Bank Architecture Table 14: Dual Operations Allowed in Same Bank Commands allowed in same bank Read Array Read Status Register Read CFI Query Read Electronic Signature Idle Yes Yes Yes Programming –2 Yes Erasing –2 Program suspended Erase suspended Status of bank Program Block Erase Program/ Erase Suspend Program/ Erase Resume Yes Yes Yes Yes Yes Yes Yes – – Yes – Yes Yes Yes – – Yes – Yes1 Yes Yes Yes – – – Yes Yes1 Yes Yes Yes Yes1 – – Yes Notes: Table 15: 1. Not allowed in the block or word that is being erased or programmed. 2. The READ ARRAY command is accepted but the data output is no guaranteed until the program or erase has completed. Dual Operation Limitations Commands allowed Read Main Blocks Current status Read CFI / OTP / Electronic Signature Read Parameter Blocks Located in parameter bank Not located in parameter bank Programming/erasing parameter blocks No No No Yes Located in parameter bank Yes No No Yes Not located in parameter bank Yes Yes Yes In different bank only No No No No Programming/ erasing main blocks Programming OTP PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 46 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Block Locking Block Locking The M58WRxxxKT/B features an instant, individual block locking scheme that enables any block to be locked or unlocked with no latency. This locking scheme has three levels of protection. • Lock/unlock - this first level allows software-only control of block locking. • Lock-down - this second level requires hardware interaction before locking can be changed. • VPP VPPLK - the third level offers a complete hardware protection against program and erase on all blocks. The protection status of each block can be set to locked, unlocked, and lock-down. Table 16, defines all of the possible protection states (WP#, DQ1, and DQ0), and Figure 26, shows a flowchart for the locking operations. Reading a Block’s Lock Status The lock status of every block can be read in the READ ELECTRONIC SIGNATURE mode of the device. To enter this mode write 90h to the device. Subsequent reads at the address specified in Table 7 output the protection status of that block. The lock status is represented by DQ0 and DQ1. DQ0 indicates the block lock/unlock status and is set by the Lock command and cleared by the Unlock command. It is also automatically set when entering lock-down. DQ1 indicates the lock-down status and is set by the LockDown command. It cannot be cleared by software, only by a hardware reset or powerdown. The following sections explain the operation of the locking system. Locked State The default status of all blocks on power-up or after a hardware reset is locked (states (0,0,1) or (1,0,1)). Locked blocks are fully protected from any program or erase. Any program or ERASE operations attempted on a locked block returns an error in the Status Register. The status of a locked block can be changed to unlocked or lock-down using the appropriate software commands. An unlocked block can be locked by issuing the Lock command. Unlocked State Unlocked blocks (states (0,0,0), (1,0,0) (1,1,0)), can be programmed or erased. All unlocked blocks return to the locked state after a hardware reset or when the device is powered-down. The status of an unlocked block can be changed to locked or lockeddown using the appropriate software commands. A locked block can be unlocked by issuing the Unlock command. Lock-down State Blocks that are locked-down (state (0,1,x)) are protected from PROGRAM and ERASE operations (as for locked blocks) but their protection status cannot be changed using software commands alone. A locked or unlocked block can be locked-down by issuing the Lock-Down command. Locked-down blocks revert to the locked state when the device is reset or powered-down. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 47 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Block Locking The lock-down function is dependent on the WP# input pin. When WP#=0 (VIL), the blocks in the lock-down state (0,1,x) are protected from program, erase and protection status changes. When WP#=1 (VIH) the lock-down function is disabled (1,1,x) and locked-down blocks can be individually unlocked to the (1,1,0) state by issuing the software command, where they can be erased and programmed. These blocks can then be re-locked (1,1,1) and unlocked (1,1,0) as desired while WP# remains high. When WP# is Low, blocks that were previously locked-down return to the lock-down state (0,1,x) regardless of any changes made while WP# was High. Device reset or power-down resets all blocks, including those in lock-down, to the locked state. Locking Operations During Erase Suspend Changes to block lock status can be performed during an ERASE SUSPEND by using the standard locking command sequences to unlock, lock or lock down a block. This is useful in the case when another block needs to be updated while an ERASE operation is in progress. To change block locking during an ERASE operation, first write the ERASE SUSPEND command, then check the status register until it indicates that the ERASE operation has been suspended. Next ,write the desired lock command sequence to a block and the lock status changes. After completing any desired lock, read, or program operations, resume the ERASE operation with the ERASE RESUME command. If a block is locked or locked down during an ERASE SUSPEND of the same block, the locking status bits change immediately. But when the ERASE is resumed, the ERASE operation completes. Locking operations cannot be performed during a program suspend. Refer to Appendix A: Command Interface State Tables for detailed information on which commands are valid during ERASE SUSPEND. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 48 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Block Locking Table 16: Lock Status Current protection status1 (WP#, DQ1, DQ0) Next protection status1 (WP#, DQ1, DQ0) Current state Program/erase allowed After Block Lock command After Block Unlock command After Block Lock-Down command After WP# transition 1,0,0 yes 1,0,1 1,0,0 1,1,1 0,0,0 2 1,0,1 no 1,0,1 1,0,0 1,1,1 0,0,1 1,1,0 yes 1,1,1 1,1,0 1,1,1 0,1,1 1,1,1 no 1,1,1 1,1,0 1,1,1 0,1,1 0,0,0 yes 0,0,1 0,0,0 0,1,1 1,0,0 0,0,12 no 0,0,1 0,0,0 0,1,1 1,0,1 0,1,1 no 0,1,1 0,1,1 0,1,1 1,1,1 or 1,1,03 Notes: 1. The lock status is defined by the write protect pin and by DQ1 (‘1’ for a locked-down block) and DQ0 (‘1’ for a locked block) as read in the READ ELECTRONIC SIGNATURE command with A1 = VIH and A0 = VIL. 2. All blocks are locked at power-up, so the default configuration is 001 or 101 according to WP# status. 3. A WP# transition to VIH on a locked block restores the previous DQ0 value, giving a 111 or 110. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 49 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Program and Erase Times and Endurance Cycles Program and Erase Times and Endurance Cycles The program and erase times and the number of program/ erase cycles per block are shown in Table 17. Exact erase times may change depending on the memory array condition. The best case is when all the bits in the block or bank are at ‘0’ (preprogrammed). The worst case is when all the bits in the block or bank are at ‘1’ (not preprogrammed). Usually, the system overhead is negligible with respect to the erase time. In the M58WRxxxKT/B the maximum number of program/ erase cycles depends on the VPP voltage supply used. Table 17: Program, Erase Times and Endurance Cycles See Note 1 Parameter Erase Condition Parameter block (4 VPP = VDD Main block (32 Kword) Program3 Min Kword)2 Pre-programmed 0.8 3 4 s 4 s 100 µs 12 40 ms 300 ms Program 5 10 5 20 µs µs 100,000 cycles 100,000 cycles Parameter block (4 Kword) 0.25 2.5 s Main block (32 Kword) 0.8 4 s 10 100 µs word4 11 ms 45 ms 10 ms Word 40 ms Quad-enhanced factory 94 ms Enhanced factory 360 ms Parameter block Quad-enhanced factory (4 Kword) Enhanced factory Quadruple VPP = VPPH s Main block (32 Kword) Word/ double word/ quadruple Main block ( 32 Kword) Quadruple word4 word4 Word Bank (4Mb) Quad-enhanced Quadruple factory4 word4 Program/erase cycles Main blocks (per block) Parameter blocks Notes: 2.5 Parameter block (4 Kword) Erase Program3 1 12 Program/Erase Cycles Main blocks (per Block) Parameter blocks Erase Unit 0.3 1 Not pre-programmed Word Suspend latency Typ Typical after 100 k W/E cycles Max 80 ms 328 ms 0.75 s 0.65 s 1000 cycles 2500 cycles 1. TA = –40 to 85°C; VDD = VDDQ = 1.7V to 2V. 2. The difference between pre-programmed and not pre-programmed is not significant (< 30ms). 3. Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution). 4. Measurements performed at 25°C. TA = 30°C ±10°C for quadruple word, double word and QUADRUPLE ENHANCED FACTORY PROGRAM. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 50 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Maximum Ratings Maximum Ratings Stressing the device above the ratings listed in Table 18: Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Refer also to relevant Micron quality documents. Table 18: Absolute Maximum Ratings Value Symbol Min Max Unit Ambient operating temperature –40 85 °C TBIAS Temperature under bias –40 125 °C TSTG Storage temperature –65 155 °C VIO Input or output voltage –0.5 VDDQ + 0.6 V VDD Supply voltage –0.2 2.45 V Input/output supply voltage –0.2 2.45 V Program voltage –0.2 10 V Output short circuit current 100 mA Time for VPP at VPPH 100 hours TA VDDQ VPP IO tVPPH Parameter PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 51 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash DC and AC Parameters DC and AC Parameters This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics tables in this section are derived from tests performed under the measurement conditions summarized in Table 19: Operating and AC Measurement Conditions. Designers should check that the operating conditions in their circuit match the operating conditions when relying on the quoted parameters. Table 19: Operating and AC Measurement Conditions Parameter Min Max Unit VDD supply voltage 1.7 2 V VDDQ supply voltage 1.7 2 V VPP supply voltage (factory environment) 8.5 9.5 V VPP supply voltage (application environment) –0.4 VDDQ+0.4 V Ambient operating temperature –40 85 °C Load capacitance (CL) 30 pF Input rise and fall times 5 ns 0 to VDDQ V VDDQ/2 V Input pulse voltages Input and output timing ref. voltages Figure 8: AC Measurement I/O Waveform VDDQ VDDQ/2 0V AI06161 PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 52 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash DC and AC Parameters Figure 9: AC Measurement Load Circuit VDDQ VDDQ VDD 16.7kΩ DEVICE UNDER TEST CL 0.1µF 16.7kΩ 0.1µF CL includes JIG capacitance Table 20: AI06162 Capacitance See Note 1 Symbol CIN COUT Parameter Input capacitance Output capacitance Notes: Test condition Min Max Unit VIN = 0 V 6 8 pF VOUT = 0 V 8 12 pF 1. Sampled only, not 100% tested. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 53 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash DC and AC Parameters Table 21: DC Characteristics - Currents Symbol Parameter Test condition Min Typ Max Unit 0V  VIN  VDDQ ±1 µA ±1 µA ILI Input leakage current ILO Output leakage current 0V  VOUT  VDDQ IDD1 Supply current asynchronous read (f = 5 MHz) CE# = Vil, G = VIH 10 20 mA Supply current synchronous Read (f = 66 MHz) 4 word 11 20 mA 8 word 13 22 mA 16 word 15 27 mA Continuous 17 30 mA RP# = VSS ± 0.2V 15 50 µA IDD2 Supply current (reset) IDD3 Supply current (standby) CE# = VDDQ ± 0.2V, CLK = VSS 15 50 µA IDD4 Supply current (automatic standby) CE# = VIL, G = VIH 15 50 µA IDD51 Supply current (program) VPP = VPPH 8 15 mA VPP = VDD 5 40 mA VPP = VPPH 8 15 mA VPP = VDD 10 40 mA Erase in one bank, asynchronous read in another bank 20 60 mA Erase in one bank, synchronous read (continuous burst 66 MHz) in another bank 27 70 mA CE# = VDDQ ± 0.2V, CLK = VSS 15 50 µA VPP = VPPH 2 10 mA VPP = VDD 0.2 5 µA VPP = VPPH 2 10 mA VPP = VDD 0.2 5 µA VPP = VPPH 100 400 µA VPP  VDD 0.2 5 µA VPP  VDD 0.2 5 µA Supply current (erase) IDD61,2 Supply current (dual operations) IDD71 Supply current program/ erase suspended (standby) IPP11 VPP supply current (program) VPP supply current (erase) IPP2 IPP3 1 VPP supply current (read) VPP supply current (standby) Notes: 1. Sampled only, not 100% tested. 2. VDD dual operation current is the sum of read and program or erase currents. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 54 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. Symbol DC Characteristics - Voltages Parameter Test condition Min Typ Max Unit VIL Input low voltage –0.5 0.4 V VIH Input high voltage VDDQ –0.4 VDDQ + 0.4 V VOL Output low voltage IOL = 100 µA 0.1 V VOH Output high voltage IOH = –100 µA VDDQ –0.1 VPP1 VPP program voltage-logic Program, erase 1.3 VPPH VPP program voltage factory Program, erase 8.5 VPPLK Program or erase lockout VLKO VDD lock voltage V 9 2.4 V 9.5 V 0.4 V 1 V 55 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash DC and AC Parameters PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 multi bank burst, Flash - Rev. G 10/11 EN Table 22: M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash DC and AC Parameters Figure 10: ASYCHRONOUS RANDOM ACCESS READ AC Waveforms A[MAX:0](1) VALID VALID tAVAV tAVLH tAXQX tLHAX ADV# tLLLH tLLQV tELLH tELQV CE# tEHQZ tELQX tEHQX OE# tGHQX tGLQV tGHQZ tGLQX Hi-Z tEHTZ tELTV WAIT tAVQV DQ[15:0] Hi-Z VALID Valid Address Latch Outputs Enabled Data Valid Standby AI13424c Notes: 1. AMAX is equal to A20 in the M58WR032KT/B and, to A21 in the M58WR064KT/B. 2. Write Enable, WE#, is High, WAIT is active Low. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 56 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. Asynchronous Page Read AC Waveforms A[MAX:2](1) VALID ADDRESS tAVAV A[1:0] VALID ADDRESS VALID ADDRESS VALID ADDRESS VALID ADDRESS tLHAX tAVLH ADV# tLLLH tLLQV tELLH CE# tELQV tELQX 57 OE# Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. WAIT(2) Hi-Z tELTV tGLQV tGLQX tAVQV1 DQ[15:0] VALID DATA Valid Address Latch VALID DATA Outputs Enabled Notes: 1. AMAX is equal to A20 in the M58WR032KT/B and, to A21 in the M58WR064KT/B. 2. WAIT is active Low. Valid Data VALID DATA VALID DATA Standby AI13425c M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash DC and AC Parameters PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 multi bank burst, Flash - Rev. G 10/11 EN Figure 11: ASYCHRONOUS READ AC Characteristics Symbol Alt tAVAV t AVQV Read Timings Value Unit tRC Address Valid to Next Address Valid Min 70 ns ACC Address Valid to Output Valid (Random) Max 70 ns Address Valid to Output Valid (page) Max 20 ns Address Transition to Output Transition Min 0 ns tAVQV1 tPAGE tAXQX1 tOH t 58 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. Latch Timings t Parameter ELTV – Chip Enable Low to Wait Valid Max 14 ns tELQV2 tCE Chip Enable Low to Output Valid Max 70 ns tELQX1 tLZ Chip Enable Low to Output Transition Min 0 ns tEHTZ – Chip Enable High to Wait Hi-Z Max 17 ns tEHQX1 tOH Chip Enable High to Output Transition Min 0 ns t t Chip Enable High to Output Hi-Z Max 17 ns EHQZ1 HZ tGLQV2 tOE Output Enable Low to Output Valid Max 20 ns tGLQX1 tOLZ Output Enable Low to Output Transition Min 0 ns tGHQX1 tOH Output Enable High to Output Transition Min 0 ns tGHQZ1 tDF Output Enable High to Output Hi-Z Max 14 ns tAVLH tAVADVH Address Valid to Latch Enable High Min 9 ns tELLH tELADVH Chip Enable Low to Latch Enable High Min 10 ns tLHAX tADVHAX Latch Enable High to Address Transition Min 9 ns tLLLH tADVLADVH Latch Enable Pulse Width Min 9 ns tLLQV tADVLQV Latch Enable Low to Output Valid (Random) Max 70 ns Notes: 1. Sampled only, not 100% tested. 2. OE# may be delayed by up to tELQV - tGLQV after the falling edge of CE# without increasing tELQV. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash DC and AC Parameters PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 multi bank burst, Flash - Rev. G 10/11 EN Table 23: DQ[15:0] SYCHRONOUS BURST READ AC Waveforms Hi-Z VALID VALID tKHQV A[MAX:0](4) VALID NOT VALID VALID tKHQX VALID ADDRESS tAVLH tLLLH ADV# tLLKH tEHQX tAVKH tEHQZ CLK(3) Note 1 tELKH tEHEL tKHAX CE# tGHQX tGHQZ 59 tGLQX OE# Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. tELTV tKHTX tKHTV Hi-Z Note 2 Note 2 WAIT Address Latch X Latency Valid Data Flow tEHTZ Note 2 Boundary Crossing Valid Data Standby Note 1. The number of clock cycles to be inserted depends on the X latency set in the Burst Configuration Register. 2. The WAIT signal can be configured to be active during wait state or one cycle before. WAIT signal is active Low. 3. Address latched and data output on the rising clock edge. Either the falling or the rising edge of the clock signal, CLK, can be configured as the active edge. Here the active edge of CLK is the rising one. 4. AMAX is equal to A20 in the M58WR032KT/B and, to A21 in the M58WR064KT/B. AI13426b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash DC and AC Parameters PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 multi bank burst, Flash - Rev. G 10/11 EN Figure 12: M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash DC and AC Parameters Figure 13: DQ[15:0] SINGLE SYCHRONOUS READ AC Waveforms Hi-Z A[MAX:0](5) VALID NOT VALID NOT VALID NOT VALID NOT VALID N VALID ADDRESS tAVLH tLLLH ADV# tEHQX tLLKH tAVKH CLK(4) tKHQV tEHQZ Note 1 tELKH tKHAX tEHEL CE# tGH tGLQX tGH tGLQV OE# tELTV WAIT(2) tKHTV Hi-Z Note 3 Note 1. The number of clock cycles to be inserted depends on the X latency set in the Burst Configuration Register. 2. The WAIT signal is configured to be active during wait state. WAIT signal is active Low. 3. WAIT is always asserted when addressed bank is in Read CFI, Read SR or Read electronic signature mode. WAIT signals valid data if the addressed bank is in Read Array mode. 4. Address latched and data output on the rising clock edge. Either the falling or the rising edge of the clock signal, CLK, can be configured as the Here the active edge of CLK is the rising one. 5. AMAX is equal to A20 in the M58WR032KT/B and, to A21 in the M58WR064KT/B. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 60 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. SYCHRONOUS BURST READ Suspend AC Waveforms Hi-Z VALID DQ[15:0] A[MAX:0}(5) VALID VALID VALID VALID ADDRESS tAVLH tLLLH ADV# tEHQX tLLKH tKHQV tAVKH Note 1 CLK(4) tELKH tEHQZ Note 3 tKHAX tEHEL CE# tGLQX tGLQV tGHQX tGHQZ 61 OE# tELTV tEHTZ Hi-Z Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. WAIT(2) Note 1. The number of clock cycles to be inserted depends on the X latency set in the Configuration Register. 2. The WAIT signal is configured to be active during wait state. WAIT signal is active Low. 3. The CLOCK signal can be held High or Low 4. Address latched and data output on the rising clock edge. Either the rising or the falling edge of the clock signal, CLK, can be configured as the active edge. Here, the active edge of K is the rising one. AI13428b 5. AMAX is equal to A20 in the M58WR032KT/B and, to A21 in the M58WR064KT/B. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash DC and AC Parameters PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 multi bank burst, Flash - Rev. G 10/11 EN Figure 14: M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash DC and AC Parameters Figure 15: Clock Input AC Waveform tKHKL tKHKH tr tf tKLKH AI06981 Table 24: Synchronous Read AC Characteristics See Notes 1,2 Synchronous read timings Symbol Alt Value Unit tAVKH tAVCLKH Address Valid to Clock High Min 9 ns tELKH tELCLKH Chip Enable Low to Clock High Min 9 ns tELTV – Chip Enable Low to Wait Valid Max 14 ns tEHEL – Chip Enable Pulse Width (subsequent synchronous reads) Min 14 ns tEHTZ – Chip Enable High to Wait Hi-Z Max 14 ns tKHAX tCLKHAX Clock High to Address Transition Min 9 ns tKHQV tCLKHQV Clock High to Output Valid Clock High to WAIT Valid Max 11 ns tCLKHQX Clock High to Output Transition Clock High to WAIT Transition Min 3 ns tADVLCLKH Latch Enable Low to Clock High Min 9 ns CLK Clock Period (f=66MHz) Min 15 ns – Clock High to Clock Low Clock Low to Clock High Min 4.5 ns – Clock Fall or Rise Time Max 3 ns tKHTV tKHQX tKHTX tLLKH Clock specifications Parameter t KHKH t t KHKL tKLKH tf tr Notes: 1. Sampled only, not 100% tested. 2. For other timings please refer to Table Table 23: ASYCHRONOUS READ AC Characteristics. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 62 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. Write AC Waveforms, Write Enable Controlled PROGRAM OR ERASE tAVAV A[MAX:0](1) BANK ADDRESS tAVLH VALID ADDRESS VALID ADDRESS tLHAX tWHAX tAVWH tLLLH tWHAV ADV# tELLH tWHLL CE# tELWL tWHEH OE# tGHWL tWHWL tWHGL WE# tWLWH 63 tDVWH DQ[15:0] tWHEL tELQV tWHDX COMMAND CMD or DATA STATUS REGISTER Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. tWHWPL tWPHWH tQVWPL WP# tWHVPL tQVVPL tVPHWH VPP tELKV CLK SET-UP COMMAND CONFIRM COMMAND OR DATA INPUT Note 1: Amax is equal to A20 in the M58WR032KT/B and, to A21 in the M58WR064KT/B. STATUS REGISTER READ 1st POLLING Ai13429b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash DC and AC Parameters PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 multi bank burst, Flash - Rev. G 10/11 EN Figure 16: M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash DC and AC Parameters Table 25: Write AC Characteristics, Write Enable Controlled See Note 1 Symbol t AVAV Alt Parameter t WC t AVLH tAVWH2 t DVWH t DS t ELLH t Write Enable controlled timings ELWL CS Unit Address Valid to Next Address Valid Min 70 ns Address Valid to Latch Enable High Min 9 ns Address Valid to Write Enable High Min 45 ns Data Valid to Write Enable High Min 45 ns Chip Enable Low to Latch Enable High Min 10 ns Chip Enable Low to Write Enable Low Min 0 ns tELQV Chip Enable Low to Output Valid Min 70 ns tELKV Chip Enable Low to Clock Valid Min 9 ns tGHWL Output Enable High to Write Enable Low Min 17 ns tLHAX Latch Enable High to Address Transition Min 9 ns tLLLH Latch Enable Pulse Width Min 9 ns Write Enable High to Address Valid Min 0 ns tWHAV2 tWHAX2 tAH Write Enable High to Address Transition Min 0 ns tWHDX tDH Write Enable High to Input Transition Min 0 ns tWHEH tCH Write Enable High to Chip Enable High Min 0 ns tWHEL3 Write Enable High to Chip Enable Low Min 25 ns tWHGL Write Enable High to Output Enable Low Min 0 ns tWHLL3 Write Enable High to Latch Enable Low Min 25 ns tWHWL tWPH Write Enable High to Write Enable Low Min 25 ns tWLWH tWP Write Enable Low to Write Enable High Min 45 ns QVVPL Output (Status Register) Valid to VPP Low Min 0 ns QVWPL Output (Status Register) Valid to Write Protect Low Min 0 ns t Protection timings t Value t tVPHWH tVPS VPP High to Write Enable High Min 200 ns tWHVPL Write Enable High to VPP Low Min 200 ns tWHWPL Write Enable High to Write Protect Low Min 200 ns tWPHWH Write Protect High to Write Enable High Min 200 ns Notes: 1. 2. 3. Sampled only, not 100% tested. Meaningful only if ADV# is always kept low. t WHEL and tWHLL have this value when reading in the targeted bank or when reading following a SET CONFIGURATION REGISTER command. System designers should take this into account and may insert a software No-Op instruction to delay the first read in the same bank after issuing any command and to delay the first read to any address after issuing a SET CONFIGURATION REGISTER command. If the first read after the command is a READ ARRAY operation in a different bank and no changes to the Configuration Register have been issued, tWHEL and tWHLL are 0ns. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 64 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash DC and AC Parameters Figure 17: Write AC Waveforms, Chip Enable Controlled PROGRAM OR ERASE tAVAV A[MAX:0](1) BANK ADDRESS VALID ADDRESS tLHAX tAVLH VALID ADDRESS tEHAX tAVEH tLLLH ADV# tELLH tEHWH WE# tWLEL OE# tGHEL tEHEL tEHGL CE# tELEH tELQV tEHDX tDVEH D[15:0] tWHEL COMMAND STATUS R CMD or DATA tEHWPL tWPHEH WP# tEHVPL tVPHEH VPP tELKV CLK SET-UP COMMAND CONFIRM COMMAND OR DATA INPUT Note 1: AMAX is equal to A20 in the M58WR032KT/B and, to A21 in the M58WR064KT/B. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 65 STATUS REGISTE READ 1st POLLING Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash DC and AC Parameters Table 26: Write AC Characteristics, Chip Enable Controlled See Note 1 Symbol t AVAV Alt t WC t AVEH tAVLH Chip Enable controlled timings t Value Unit Address Valid to Next Address Valid Min 70 ns Address Valid to Chip Enable High Min 45 ns Address Valid to Latch Enable High Min 9 ns DVEH t DS Data Valid to Chip Enable High Min 45 ns t EHAX t AH Chip Enable High to Address Transition Min 0 ns t EHDX t DH Chip Enable High to Input Transition Min 0 ns tEHEL tCPH Chip Enable High to Chip Enable Low Min 25 ns Chip Enable High to Output Enable Low Min 0 ns Chip Enable High to Write Enable High Min 0 ns Chip Enable Low to Clock Valid Min 9 ns Chip Enable Low to Chip Enable High Min 45 ns tELLH Chip Enable Low to Latch Enable High Min 10 ns tELQV Chip Enable Low to Output Valid Min 70 ns tGHEL Output Enable High to Chip Enable Low Min 17 ns tLHAX Latch Enable High to Address Transition Min 9 ns tLLLH Latch Enable Pulse Width Min 9 ns Write Enable High to Chip Enable Low Min 25 ns Write Enable Low to Chip Enable Low Min 0 ns tEHVPL Chip Enable High to VPP Low Min 200 ns tEHWPL Chip Enable High to Write Protect Low Min 200 ns t QVVPL Output (Status Register) Valid to VPP Low Min 0 ns t QVWPL Output (Status Register) Valid to Write Protect Low Min 0 ns VPP High to Chip Enable High Min 200 ns Write Protect High to Chip Enable High Min 200 ns tEHGL tEHWH tCH tELKV tELEH tCP tWHEL2 tWLEL Protection timings Parameter tVPHEH tCS tVPS tWPHEH Notes: 1. Sampled only, not 100% tested. 2. tWHEL has this value when reading in the targeted bank or when reading following a SET CONFIGURATION REGISTER command. System designers should take this into account and may insert a software No-Op instruction to delay the first read in the same bank after issuing any command and to delay the first read to any address after issuing a SET CONFIGURATION REGISTER command. If the first read after the command is a READ ARRAY operation in a different bank and no changes to the Configuration Register have been issued, tWHEL is 0ns. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 66 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash DC and AC Parameters Figure 18. Reset and Power-up AC Waveforms tPHWL tPHEL tPHGL tPHLL WE#, CE#, OE# ADV# tPLWL tPLEL tPLGL tPLLL RP# tVDHPH tPLPH VDD, VDDQ Power-Up Reset AI06976 Table 27: Reset and Power-up AC Characteristics Symbol tPLWL Parameter Test condition Value Unit During program Min 10 µs During erase Min 20 µs Other conditions Min 80 ns Reset High to Write Enable Low Reset High to Chip Enable Low Reset High to Output Enable Low Reset High to Latch Enable Low Min 30 ns tPLPH1,2 RP# pulse width Min 50 ns tVDHPH3 Supply Voltages High to Reset High Min 200 µs tPLEL tPLGL tPLLL tPHWL tPHEL tPHGL tPHLL Reset Low to Write Enable Low, Reset Low to Chip Enable Low, Reset Low to Output Enable Low, Reset Low to Latch Enable Low Notes: 1. The device Reset is possible but not guaranteed if tPLPH < 50ns. 2. Sampled only, not 100% tested. 3. It is important to assert RP# in order to allow proper CPU initialization during power-up or reset. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 67 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Package Dimensions Package Dimensions To meet environmental requirements, Micron offers the M58WRxxxKT/B in RoHS compliant packages, which have a lead-free, second-level interconnect. In compliance with JEDEC Standard JESD97, the category of second-level interconnect is marked on the package and on the inner box label. The maximum ratings related to soldering conditions are also marked on the inner box label. Figure 19: VFBGA56 7.7 × 9 mm - 8 × 7 Active Ball Array, 0.75 mm, Package Outline D D1 FD FE E SD E1 ddd BALL "A1" e e b A A2 A1 BGA-Z38 Notes: 1. Drawing is not to scale. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 68 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Package Dimensions Table 28: VFBGA56 7.7 × 9 mm - 8 × 7 Active Ball Array, 0.75 mm, Package Mechanical Data Millimeters Symbol Typ Min A Max 1.000 A1 0.200 A2 0.660 b 0.350 0.300 0.400 D 7.700 7.600 7.800 D1 5.250 – – ddd 0.080 e 0.750 – – E 9.000 8.900 9.100 E1 4.500 – – FD 1.225 – – FE 2.250 – – SD 0.375 – – PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 69 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Part numbering Part numbering Table 29: Ordering Information Scheme Example: M58WR032KT 70 ZB 6 E Device type M58 Architecture W = Multiple bank, burst mode Operating voltage R = VDD = VDDQ = 1.7V to 2V Density 032 = 32Mb (×16) 064 = 64Mb (×16) Technology K = 65nm technology Parameter bank location T = top boot B = bottom boot Speed 70 = 70ns 7A = Automotive Certified –40 to 85°C Package ZB = VFBGA56 7.7 × 9 mm, 0.75mm pitch Temperature range 6 = –40 to 85°C Options E = RoHS compliant, standard packing F = RoHS compliant, tape and reel packing Devices are shipped from the factory with the memory content bits erased to 1. For a list of available options (speed, etc.) or for further information on any aspect of this device, please contact the nearest Micron sales office. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 70 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix A: Block Address Tables Appendix A: Block Address Tables Table 30: Top Boot Block Addresses, M58WR032KT # Size (Kword) Address range 0 4 1FF000-1FFFFF 1 4 1FE000-1FEFFF 2 4 1FD000-1FDFFF 3 4 1FC000-1FCFFF 4 4 1FB000-1FBFFF 5 4 1FA000-1FAFFF 6 4 1F9000-1F9FFF 7 4 1F8000-1F8FFF 8 32 1F0000-1F7FFF 9 32 1E8000-1EFFFF 10 32 1E0000-1E7FFF 11 32 1D8000-1DFFFF 12 32 1D0000-1D7FFF 13 32 1C8000-1CFFFF 14 32 1C0000-1C7FFF 15 32 1B8000-1BFFFF 16 32 1B0000-1B7FFF 17 32 1A8000-1AFFFF 18 32 1A0000-1A7FFF 19 32 198000-19FFFF 20 32 190000-197FFF 21 32 188000-18FFFF 22 32 180000-187FFF 23 32 178000-17FFFF 24 32 170000-177FFF Bank 2 Bank 1 Parameter bank Bank1 25 32 168000-16FFFF 26 32 160000-167FFF 27 32 158000-15FFFF 28 32 150000-157FFF 29 32 148000-14FFFF 30 32 140000-147FFF PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 71 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix A: Block Address Tables Table 30: Top Boot Block Addresses, M58WR032KT (Continued) Bank 6 Bank 5 Bank 4 Bank 3 Bank1 # Size (Kword) Address range 31 32 138000-13FFFF 32 32 130000-137FFF 33 32 128000-12FFFF 34 32 120000-127FFF 35 32 118000-11FFFF 36 32 110000-117FFF 37 32 108000-10FFFF 38 32 100000-107FFF 39 32 0F8000-0FFFFF 40 32 0F0000-0F7FFF 41 32 0E8000-0EFFFF 42 32 0E0000-0E7FFF 43 32 0D8000-0DFFFF 44 32 0D0000-0D7FFF 45 32 0C8000-0CFFFF 46 32 0C0000-0C7FFF 47 32 0B8000-0BFFFF 48 32 0B0000-0B7FFF 49 32 0A8000-0AFFFF 50 32 0A0000-0A7FFF 51 32 098000-09FFFF 52 32 090000-097FFF 53 32 088000-08FFFF 54 32 080000-087FFF 55 32 078000-07FFFF 56 32 070000-077FFF 57 32 068000-06FFFF 58 32 060000-067FFF 59 32 058000-05FFFF 60 32 050000-057FFF 61 32 048000-04FFFF 62 32 040000-047FFF PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 72 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix A: Block Address Tables Table 30: Top Boot Block Addresses, M58WR032KT (Continued) Bank1 Bank 7 # Notes: Table 31: Bank 7 Address range 63 32 038000-03FFFF 64 32 030000-037FFF 65 32 028000-02FFFF 66 32 020000-027FFF 67 32 018000-01FFFF 68 32 010000-017FFF 69 32 008000-00FFFF 70 32 000000-007FFF 1. There are two Bank Regions: Bank Region 1 contains all the banks that are made up of main blocks only; Bank Region 2 contains the banks that are made up of the parameter and main blocks (parameter bank). Bottom Boot Block Addresses, M58WR032KB Bank1 Bank 6 Size (Kword) # Size (Kword) Address range 70 32 1F8000-1FFFFF 69 32 1F0000-1F7FFF 68 32 1E8000-1EFFFF 67 32 1E0000-1E7FFF 66 32 1D8000-1DFFFF 65 32 1D0000-1D7FFF 64 32 1C8000-1CFFFF 63 32 1C0000-1C7FFF 62 32 1B8000-1BFFFF 61 32 1B0000-1B7FFF 60 32 1A8000-1AFFFF 59 32 1A0000-1A7FFF 58 32 198000-19FFFF 57 32 190000-197FFF 56 32 188000-18FFFF 55 32 180000-187FFF PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 73 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix A: Block Address Tables Table 31: Bottom Boot Block Addresses, M58WR032KB (Continued) Bank 2 Bank 3 Bank 4 Bank 5 Bank1 # Size (Kword) Address range 54 32 178000-17FFFF 53 32 170000-177FFF 52 32 168000-16FFFF 51 32 160000-167FFF 50 32 158000-15FFFF 49 32 150000-157FFF 48 32 148000-14FFFF 47 32 140000-147FFF 46 32 138000-13FFFF 45 32 130000-137FFF 44 32 128000-12FFFF 43 32 120000-127FFF 42 32 118000-11FFFF 41 32 110000-117FFF 40 32 108000-10FFFF 39 32 100000-107FFF 38 32 0F8000-0FFFFF 37 32 0F0000-0F7FFF 36 32 0E8000-0EFFFF 35 32 0E0000-0E7FFF 34 32 0D8000-0DFFFF 33 32 0D0000-0D7FFF 32 32 0C8000-0CFFFF 31 32 0C0000-0C7FFF 30 32 0B8000-0BFFFF 29 32 0B0000-0B7FFF 28 32 0A8000-0AFFFF 27 32 0A0000-0A7FFF 26 32 098000-09FFFF 25 32 090000-097FFF 24 32 088000-08FFFF 23 32 080000-087FFF PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 74 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix A: Block Address Tables Table 31: Bottom Boot Block Addresses, M58WR032KB (Continued) # Size (Kword) Address range 22 32 078000-07FFFF 21 32 070000-077FFF 20 32 068000-06FFFF 19 32 060000-067FFF 18 32 058000-05FFFF 17 32 050000-057FFF 16 32 048000-04FFFF 15 32 040000-047FFF 14 32 038000-03FFFF 13 32 030000-037FFF 12 32 028000-02FFFF 11 32 020000-027FFF 10 32 018000-01FFFF 9 32 010000-017FFF 8 32 008000-00FFFF 7 4 007000-007FFF 6 4 006000-006FFF 5 4 005000-005FFF 4 4 004000-004FFF 3 4 003000-003FFF 2 4 002000-002FFF 1 4 001000-001FFF 0 4 000000-000FFF Parameter Bank Bank 1 Bank1 Notes: 1. There are two bank regions: bank region 2 contains all the banks that are made up of main blocks only; bank region 1 contains the banks that are made up of the parameter and main blocks (parameter bank). PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 75 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix A: Block Address Tables Table 32: Top Boot Block Addresses, M58WR064KT # Size (Kword) Address range 0 4 3FF000-3FFFFF Bank 3 Bank 2 Bank 1 Parameter bank Bank1 1 4 3FE000-3FEFFF 2 4 3FD000-3FDFFF 3 4 3FC000-3FCFFF 4 4 3FB000-3FBFFF 5 4 3FA000-3FAFFF 6 4 3F9000-3F9FFF 7 4 3F8000-3F8FFF 8 32 3F0000-3F7FFF 9 32 3E8000-3EFFFF 10 32 3E0000-3E7FFF 11 32 3D8000-3DFFFF 12 32 3D0000-3D7FFF 13 32 3C8000-3CFFFF 14 32 3C0000-3C7FFF 15 32 3B8000-3BFFFF 16 32 3B0000-3B7FFF 17 32 3A8000-3AFFFF 18 32 3A0000-3A7FFF 19 32 398000-39FFFF 20 32 390000-397FFF 21 32 388000-38FFFF 22 32 380000-387FFF 23 32 378000-37FFFF 24 32 370000-377FFF 25 32 368000-36FFFF 26 32 360000-367FFF 27 32 358000-35FFFF 28 32 350000-357FFF 29 32 348000-34FFFF 30 32 340000-347FFF 31 32 338000-33FFFF 32 32 330000-337FFF 33 32 328000-32FFFF 34 32 320000-327FFF 35 32 318000-31FFFF 36 32 310000-317FFF 37 32 308000-30FFFF 38 32 300000-307FFF PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 76 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix A: Block Address Tables Table 32: Top Boot Block Addresses, M58WR064KT (Continued) Bank 8 Bank 7 Bank 6 Bank 5 Bank 4 Bank1 # Size (Kword) Address range 39 32 2F8000-2FFFFF 40 32 2F0000-2F7FFF 41 32 2E8000-2EFFFF 42 32 2E0000-2E7FFF 43 32 2D8000-2DFFFF 44 32 2D0000-2D7FFF 45 32 2C8000-2CFFFF 46 32 2C0000-2C7FFF 47 32 2B8000-2BFFFF 48 32 2B0000-2B7FFF 49 32 2A8000-2AFFFF 50 32 2A0000-2A7FFF 51 32 298000-29FFFF 52 32 290000-297FFF 53 32 288000-28FFFF 54 32 280000-287FFF 55 32 278000-27FFFF 56 32 270000-277FFF 57 32 268000-26FFFF 58 32 260000-267FFF 59 32 258000-25FFFF 60 32 250000-257FFF 61 32 248000-24FFFF 62 32 240000-247FFF 63 32 238000-23FFFF 64 32 230000-237FFF 65 32 228000-22FFFF 66 32 220000-227FFF 67 32 218000-21FFFF 68 32 210000-217FFF 69 32 208000-20FFFF 70 32 200000-207FFF 71 32 1F8000-1FFFFF 72 32 1F0000-1F7FFF 73 32 1E8000-1EFFFF 74 32 1E0000-1E7FFF 75 32 1D8000-1DFFFF 76 32 1D0000-1D7FFF 77 32 1C8000-1CFFFF 78 32 1C0000-1C7FFF PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 77 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix A: Block Address Tables Table 32: Top Boot Block Addresses, M58WR064KT (Continued) Bank 13 Bank 12 Bank 11 Bank 10 Bank 9 Bank1 # Size (Kword) Address range 79 32 1B8000-1BFFFF 80 32 1B0000-1B7FFF 81 32 1A8000-1AFFFF 82 32 1A0000-1A7FFF 83 32 198000-19FFFF 84 32 190000-197FFF 85 32 188000-18FFFF 86 32 180000-187FFF 87 32 178000-17FFFF 88 32 170000-177FFF 89 32 168000-16FFFF 90 32 160000-167FFF 91 32 158000-15FFFF 92 32 150000-157FFF 93 32 148000-14FFFF 94 32 140000-147FFF 95 32 138000-13FFFF 96 32 130000-137FFF 97 32 128000-12FFFF 98 32 120000-127FFF 99 32 118000-11FFFF 100 32 110000-117FFF 101 32 108000-10FFFF 102 32 100000-107FFF 103 32 0F8000-0FFFFF 104 32 0F0000-0F7FFF 105 32 0E8000-0EFFFF 106 32 0E0000-0E7FFF 107 32 0D8000-0DFFFF 108 32 0D0000-0D7FFF 109 32 0C8000-0CFFFF 110 32 0C0000-0C7FFF 111 32 0B8000-0BFFFF 112 32 0B0000-0B7FFF 113 32 0A8000-0AFFFF 114 32 0A0000-0A7FFF 115 32 098000-09FFFF 116 32 090000-097FFF 117 32 088000-08FFFF 118 32 080000-087FFF PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 78 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix A: Block Address Tables Table 32: Top Boot Block Addresses, M58WR064KT (Continued) Bank 15 Bank 14 Bank1 Notes: Table 33: # Size (Kword) Address range 119 32 078000-07FFFF 120 32 070000-077FFF 121 32 068000-06FFFF 122 32 060000-067FFF 123 32 058000-05FFFF 124 32 050000-057FFF 125 32 048000-04FFFF 126 32 040000-047FFF 127 32 038000-03FFFF 128 32 030000-037FFF 129 32 028000-02FFFF 130 32 020000-027FFF 131 32 018000-01FFFF 132 32 010000-017FFF 133 32 008000-00FFFF 134 32 000000-007FFF 1. There are two bank regions: bank region 1 contains all the banks that are made up of main blocks only; bank region 2 contains the banks that are made up of the parameter and main blocks (parameter bank). Bottom Boot Block Addresses, M58WR064KB Bank 14 Bank 15 Bank1 # Size (Kword) Address range 134 32 3F8000-3FFFFF 133 32 3F0000-3F7FFF 132 32 3E8000-3EFFFF 131 32 3E0000-3E7FFF 130 32 3D8000-3DFFFF 129 32 3D0000-3D7FFF 128 32 3C8000-3CFFFF 127 32 3C0000-3C7FFF 126 32 3B8000-3BFFFF 125 32 3B0000-3B7FFF 124 32 3A8000-3AFFFF 123 32 3A0000-3A7FFF 122 32 398000-39FFFF 121 32 390000-397FFF 120 32 388000-38FFFF 119 32 380000-387FFF PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 79 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix A: Block Address Tables Table 33: Bottom Boot Block Addresses, M58WR064KB (Continued) Bank 10 Bank 11 Bank 12 Bank 13 Bank1 # Size (Kword) Address range 118 32 378000-37FFFF 117 32 370000-377FFF 116 32 368000-36FFFF 115 32 360000-367FFF 114 32 358000-35FFFF 113 32 350000-357FFF 112 32 348000-34FFFF 111 32 340000-347FFF 110 32 338000-33FFFF 109 32 330000-337FFF 108 32 328000-32FFFF 107 32 320000-327FFF 106 32 318000-31FFFF 105 32 310000-317FFF 104 32 308000-30FFFF 103 32 300000-307FFF 102 32 2F8000-2FFFFF 101 32 2F0000-2F7FFF 100 32 2E8000-2EFFFF 99 32 2E0000-2E7FFF 98 32 2D8000-2DFFFF 97 32 2D0000-2D7FFF 96 32 2C8000-2CFFFF 95 32 2C0000-2C7FFF 94 32 2B8000-2BFFFF 93 32 2B0000-2B7FFF 92 32 2A8000-2AFFFF 91 32 2A0000-2A7FFF 90 32 298000-29FFFF 89 32 290000-297FFF 88 32 288000-28FFFF 87 32 280000-287FFF PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 80 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix A: Block Address Tables Table 33: Bottom Boot Block Addresses, M58WR064KB (Continued) Bank 6 Bank 7 Bank 8 Bank 9 Bank1 # Size (Kword) Address range 86 32 278000-27FFFF 85 32 270000-277FFF 84 32 268000-26FFFF 83 32 260000-267FFF 82 32 258000-25FFFF 81 32 250000-257FFF 80 32 248000-24FFFF 79 32 240000-247FFF 78 32 238000-23FFFF 77 32 230000-237FFF 76 32 228000-22FFFF 75 32 220000-227FFF 74 32 218000-21FFFF 73 32 210000-217FFF 72 32 208000-20FFFF 71 32 200000-207FFF 70 32 1F8000-1FFFFF 69 32 1F0000-1F7FFF 68 32 1E8000-1EFFFF 67 32 1E0000-1E7FFF 66 32 1D8000-1DFFFF 65 32 1D0000-1D7FFF 64 32 1C8000-1CFFFF 63 32 1C0000-1C7FFF 62 32 1B8000-1BFFFF 61 32 1B0000-1B7FFF 60 32 1A8000-1AFFFF 59 32 1A0000-1A7FFF 58 32 198000-19FFFF 57 32 190000-197FFF 56 32 188000-18FFFF 55 32 180000-187FFF PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 81 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix A: Block Address Tables Table 33: Bottom Boot Block Addresses, M58WR064KB (Continued) Bank 2 Bank 3 Bank 4 Bank 5 Bank1 # Size (Kword) Address range 54 32 178000-17FFFF 53 32 170000-177FFF 52 32 168000-16FFFF 51 32 160000-167FFF 50 32 158000-15FFFF 49 32 150000-157FFF 48 32 148000-14FFFF 47 32 140000-147FFF 46 32 138000-13FFFF 45 32 130000-137FFF 44 32 128000-12FFFF 43 32 120000-127FFF 42 32 118000-11FFFF 41 32 110000-117FFF 40 32 108000-10FFFF 39 32 100000-107FFF 38 32 0F8000-0FFFFF 37 32 0F0000-0F7FFF 36 32 0E8000-0EFFFF 35 32 0E0000-0E7FFF 34 32 0D8000-0DFFFF 33 32 0D0000-0D7FFF 32 32 0C8000-0CFFFF 31 32 0C0000-0C7FFF 30 32 0B8000-0BFFFF 29 32 0B0000-0B7FFF 28 32 0A8000-0AFFFF 27 32 0A0000-0A7FFF 26 32 098000-09FFFF 25 32 090000-097FFF 24 32 088000-08FFFF 23 32 080000-087FFF PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 82 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix A: Block Address Tables Table 33: Bottom Boot Block Addresses, M58WR064KB (Continued) # Size (Kword) Address range 22 32 078000-07FFFF 21 32 070000-077FFF 20 32 068000-06FFFF 19 32 060000-067FFF 18 32 058000-05FFFF 17 32 050000-057FFF 16 32 048000-04FFFF 15 32 040000-047FFF 14 32 038000-03FFFF 13 32 030000-037FFF 12 32 028000-02FFFF 11 32 020000-027FFF 10 32 018000-01FFFF 9 32 010000-017FFF 8 32 008000-00FFFF 7 4 007000-007FFF 6 4 006000-006FFF 5 4 005000-005FFF 4 4 004000-004FFF 3 4 003000-003FFF 2 4 002000-002FFF 1 4 001000-001FFF 0 4 000000-000FFF Parameter bank Bank 1 Bank1 Notes: 1. There are two bank regions: bank region 2 contains all the banks that are made up of main blocks only; bank region 1 contains the banks that are made up of the parameter and main blocks (parameter bank). PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 83 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix B: Common Flash Interface Appendix B: Common Flash Interface The common Flash interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when necessary. When the READ CFI QUERY command is issued the device enters CFI query mode and the data structure is read from the memory. Tables 34, 35, 36, 37, 38, 39, 40, 41, 42 and 43 show the addresses used to retrieve the data. The query data is always presented on the lowest order data outputs (DQ[7:0]), the other outputs (DQ[15:8]) are set to 0. The CFI data structure also contains a security area where a 64-bit unique security number is written (see Figure 5: Protection Register Memory Map). This area can be accessed only in read mode by the final user. It is impossible to change the security number after it has been written by Micron. Issue a READ ARRAY command to return to read mode. Table 34: Query Structure Overview See Note 1 Offset Sub-section name Description 00h Reserved Reserved for algorithm-specific information 10h CFI Query Identification String Command set ID and algorithm data offset 1Bh System Interface Information Device timing & voltage information 27h Device Geometry Definition Flash device layout P Primary Algorithm-specific Extended Query table Additional information specific to the Primary Algorithm (optional) A Alternate Algorithm-specific Extended Query table Additional information specific to the Alternate Algorithm (optional) Security Code Area Lock Protection Register Unique device Number and User Programmable OTP 80h Notes: 1. The Flash memory display the CFI data structure when CFI Query command is issued. In this table are listed the main sub-sections detailed in Tables 35, 36, 37 and 38. Query data is always presented on the lowest order data outputs. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 84 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix B: Common Flash Interface Table 35: CFI Query Identification String Offset Sub-section name Description Value 00h 0020h Manufacturer code 01h 8814h 8810h 8815h 8811h Device code 02h reserved Reserved 03h reserved Reserved 04h-0Fh reserved Reserved 10h 0051h 11h 0052h "R" 12h 0059h "Y" 13h 0003h 14h 0000h 15h offset = P = 0039h 16h 0000h 17h 0000h 18h 0000h 19h value = A = 0000h 1Ah 0000h Micron M58WR032KT (Top) M58WR064KT (Top) M58WR032KB (Bottom) M58WR064KB (Bottom) Query Unique ASCII String "QRY" "Q" Primary Algorithm Command Set and Control Interface ID code 16 bit ID code defining a specific algorithm Address for Primary Algorithm extended Query table (see Table 38) p = 39h Alternate Vendor Command Set and Control Interface ID Code second vendor - specified algorithm supported NA Address for Alternate Algorithm extended Query table NA PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 85 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix B: Common Flash Interface Table 36: CFI Query System Interface Information Offset Data Description Value 1Bh 0017h VDD Logic Supply Minimum Program/Erase or Write voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 millivolts 1.7V 1Ch 0020h VDD Logic Supply Maximum Program/Erase or Write voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 millivolts 2V 1Dh 0085h VPP [Programming] Supply Minimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 millivolts 8.5V 1Eh 0095h VPP [Programming] Supply Maximum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 millivolts 9.5V 1Fh 0004h Typical time-out per single byte/word program = 2n µs 16µs 2n 20h 0000h Typical time-out for multi-byte programming = 21h 000Ah Typical time-out per individual block erase = 2n ms 22h µs n NA 1s NA 0000h Typical time-out for full chip erase = 2 ms 23h 0003h Maximum time-out for word program = 2n 24h 0000h Maximum time-out for multi-byte programming = 2n times typical NA 25h 0002h Maximum time-out per individual block erase = 2n times typical 4s 26h 0000h Maximum time-out for chip erase = PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 86 2n times typical times typical 128µs NA Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix B: Common Flash Interface Table 37: Device Geometry Definition Offset word mode Data 27h 0016h Top devices M58WR032KT/B Device Size = 2n in number of bytes 2n Value 4Mb 0017h M58WR064KT/B Device Size = 28h 29h 0001h 0000h Flash Device Interface Code description 2Ah 2Bh 0000h 0000h Maximum number of bytes in multi-byte program or page = 2n NA 2Ch 0002h Number of identical sized erase block regions within the device bit 7 to 0 = x = number of Erase Block Regions 2 003Eh 0000h M58WR032KT Region 1 Information Number of identical-size erase blocks = 003Eh+1 63 007Eh 0000h M58WR064KT Region 1 Information Number of identical-size erase blocks = 007Eh+1 127 2Fh 30h 0000h 0001h Region 1 Information Block size in Region 1 = 0100h * 256 byte 31h 32h 0007h 0000h Region 2 Information Number of identical-size erase blocks = 0007h+1 33h 34h 0020h 0000h Region 2 Information Block size in Region 2 = 0020h * 256 byte 2Dh 2Eh 35h 38h Bottom devices Description in number of bytes 8Mb x16 Async Reserved for future erase block region information 64Kb 8 8Kb NA 2Dh 2Eh 0007h 0000h Region 1 Information Number of identical-size erase block = 0007h+1 2Fh 30h 0020h 0000h Region 1 Information Block size in Region 1 = 0020h * 256 byte 31h 32h 003Eh 0000h M58WR032KB Region 1 Information Number of identical-size erase blocks = 003Eh+1 63 007Eh 0000h M58WR064KB Region 1 Information Number of identical-size erase blocks = 007Eh+1 127 0000h 0001h Region 2 Information Block size in Region 2 = 0100h * 256 byte 33h 34h 35h 38h Reserved for future erase block region information PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 87 8 8Kb 64Kb NA Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix B: Common Flash Interface Table 38: Primary Algorithm-Specific Extended Query Table See Note 1 Offset Data (P)h = 39h 0050h Description Primary Algorithm extended Query table unique ASCII string “PRI” Value "P" 0052h "R" 0049h "I" (P+3)h = 3Ch 0031h Major version number, ASCII "1" (P+4)h = 3Dh 0033h Minor version number, ASCII "3" (P+5)h = 3Eh 00E6h Extended Query table contents for Primary Algorithm. Address (P+5)h contains less significant byte. 0003h (P+7)h = 40h 0000h (P+8)h = 41h 0000h (P+9)h = 42h 0001h bit 0 Chip Erase supported (1 = Yes, 0 = No) bit 1 Erase Suspend supported (1 = Yes, 0 = No) bit 2 Program Suspend supported (1 = Yes, 0 = No) bit 3 Legacy Lock/Unlock supported (1 = Yes, 0 = No) bit 4 Queued Erase supported (1 = Yes, 0 = No) bit 5 Instant individual block locking supported (1 = Yes, 0 = No) bit 6 Protection bits supported (1 = Yes, 0 = No) bit 7 Page mode read supported (1 = Yes, 0 = No) bit 8 Synchronous read supported (1 = Yes, 0 = No) bit 9 Simultaneous operation supported (1 = Yes, 0 = No) bit 10 to 31 Reserved; undefined bits are ‘0’. If bit 31 is 1 then another 31 bit field of optional features follows at the end of the bit-30 field. No Yes Yes No No Yes Yes Yes Yes Yes Supported Functions after Suspend Read Array, Read Status Register and CFI Query Yes bit 0 Program supported after Erase Suspend (1 = Yes, 0 = No) bit 7 to 1 Reserved; undefined bits are ‘0’ (P+A)h = 43h 0003h (P+B)h = 44h 0000h Block Protect status Defines which bits in the Block Status Register section of the Query are implemented. bit 0 Block protect Status Register Lock/Unlock bit active (1 = Yes, 0 = No) bit 1 Block Lock Status Register lock-down bit active (1 = Yes, 0 = No) bit 15 to 2 Reserved for future use; undefined bits are ‘0’ (P+C)h = 45h 0018h VDD Logic Supply Optimum Program/Erase voltage (highest performance) Yes Yes 1.8V bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100mV (P+D)h = 46h 0090h VPP Supply Optimum Program/Erase voltage 9V bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100mV Notes: 1. The variable P is a pointer that is defined at CFI offset 15h (See Table 35). PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 88 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix B: Common Flash Interface Table 39: Protection Register Information See Note 1 Offset Data Description Value (P+E)h = 47h 0001h Number of protection register fields in JEDEC ID space. 0000h indicates that 256 fields are available. 1 (P+F)h = 48h 0080h (P+10)h = 49h 0000h (P+11)h = 4Ah 0003h (P+12)h= 4Bh 0004h Protection Field 1: Protection Description Bits 0-7 Lower byte of protection register address Bits 8-15 Upper byte of protection register address Bits 16-23 2n bytes in factory pre-programmed region Bits 24-31 2n bytes in user programmable region Notes: Table 40: 0080h 8 bytes 16 bytes 1. The variable P is a pointer that is defined at CFI offset 15h (See Table 35). Burst Read Information See Note Table 1 Offset Data (P+13)h = 4Ch 0003h Page-mode read capability bits 0-7 ’n’ such that 2n HEX value represents the number of read-page bytes. See offset 28h for device word width to determine page-mode data output width. (P+14)h = 4Dh 0004h Number of synchronous mode read configuration fields that follow. 4 (P+15)h = 4Eh 0001h Synchronous mode read capability configuration 1 bit 3-7 Reserved bit 0-2 ’n’ such that 2n+1 HEX value represents the maximum number of continuous synchronous reads when the device is configured for its maximum word width. A value of 07h indicates that the device is capable of continuous linear bursts that will output data until the internal burst counter reaches the end of the device’s burstable address space. This field’s 3-bit value can be written directly to the read configuration register bit 0-2 if the device is configured for its maximum word width. See offset 28h for word width to determine the burst data output width. 4 (P+16)h = 4Fh 0002h Synchronous mode read capability configuration 2 8 (P+17)h = 50h 0003h Synchronous mode read capability configuration 3 16 (P+18)h = 51h 0007h Synchronous mode read capability configuration 4 Cont. Notes: Table 41: Description Value 8 bytes 1. The variable P is a pointer that is defined at CFI offset 15h (See Table 35). Bank and Erase Block Region Information See Notes 1,2 M58WR032KT, M58WR064KT M58WR032KB, M58WR064KB Offset Data Offset Data (P+19)h = 52h 02h (P+19)h = 52h 02h Notes: Description Number of Bank Regions within the device 1. The variable P is a pointer that is defined at CFI offset 15h (See Table 35). 2. Bank Regions. There are two Bank Regions, see Tables 30, 31, 32 and 33. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 89 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix B: Common Flash Interface Table 42: Bank and Erase Block Region 1 Information See Note 1 M58WR032KT, M58WR064KT M58WR032KB, M58WR064KB Offset Data Offset Data (P+1A)h = 53h 07h2 0Fh3 (P+1A)h = 53h 01h (P+1B)h = 54h 00h (P+1B)h = 54h 00h (P+1C)h = 55h 11h (P+1C)h = 55h 11h Number of program or erase operations allowed in Bank Region 1: Bits 0-3: Number of simultaneous program operations Bits 4-7: Number of simultaneous erase operations (P+1D)h = 56h 00h (P+1D)h = 56h 00h Number of program or erase operations allowed in other banks while a bank in same region is programming Bits 0-3: Number of simultaneous program operations Bits 4-7: Number of simultaneous erase operations (P+1E)h = 57h 00h (P+1E)h = 57h 00h Number of program or erase operations allowed in other banks while a bank in this region is erasing Bits 0-3: Number of simultaneous program operations Bits 4-7: Number of simultaneous erase operations (P+1F)h = 58h 01h (P+1F)h = 58h 02h Types of erase block regions in Bank Region 1 n = number of erase block regions with contiguous same-size erase blocks. Symmetrically blocked banks have one blocking region.4 (P+20)h = 59h 07h (P+20)h = 59h 07h (P+21)h = 5Ah 00h (P+21)h = 5Ah 00h Bank Region 1 Erase Block Type 1 Information Bits 0-15: n+1 = number of identical-sized erase blocks Bits 16-31: n×256 = number of bytes in erase block region (P+22)h = 5Bh 00h (P+22)h = 5Bh 20h (P+23)h = 5Ch 01h (P+23)h = 5Ch 00h (P+24)h = 5Dh 64h (P+24)h = 5Dh 64h (P+25)h = 5Eh 00h (P+25)h = 5Eh 00h (P+26)h = 5Fh 01h (P+26)h = 5Fh 01h Bank Region 1 (Erase Block Type 1): BIts per cell, internal ECC Bits 0-3: bits per cell in erase region Bit 4: reserved for “internal ECC used” BIts 5-7: reserved 5Eh 01 5Eh 01 (P+27)h = 60h 03h (P+27)h = 60h 03h Bank Region 1 (Erase Block Type 1): page mode and synchronous mode capabilities Bit 0: Page-mode reads permitted Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted Bits 3-7: reserved (P+28)h = 61h 06h (P+29)h = 62h 00h Bank Region 1 Erase Block Type 2 Information Bits 0-15: n+1 = number of identical-sized erase blocks Bits 16-31: n×256 = number of bytes in erase block region (P+2A)h = 63h 00h (P+2B)h = 64h 01h PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN Description Number of identical banks within Bank Region 1 Bank Region 1 (Erase Block Type 1) Minimum block erase cycles × 1000 90 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix B: Common Flash Interface Table 42: Bank and Erase Block Region 1 Information (Continued) See Note 1 M58WR032KT, M58WR064KT Offset M58WR032KB, M58WR064KB Data Notes: 1. 2. 3. 4. Offset Data Description (P+2C)h = 65h 64h (P+2D)h = 66h 00h (P+2E)h = 67h 01h Bank Regions 1 (Erase Block Type 2): BIts per cell, internal ECC Bits 0-3: bits per cell in erase region Bit 4: reserved for “internal ECC used” BIts 5-7: reserved (P+2F)h = 68h 03h Bank Region 1 (Erase Block Type 2): page mode and synchronous mode capabilities Bit 0: Page-mode reads permitted Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted Bits 3-7: reserved Bank Region 1 (Erase Block Type 2) Minimum block erase cycles × 1000 The variable P is a pointer which is defined at CFI offset 15h (See Table 35). Applies to M58WR032KT. Applies to M58WR064KT. Bank Regions. There are two Bank Regions, see Tables 30, 31, 32 and 33. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 91 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix B: Common Flash Interface Table 43: Bank and Erase Block Region 2 Information See Note 1 M58WR032KT, M58WR064KT M58WR032KB, M58WR064KB Offset Data Offset Data (P+28)h = 61h 01h (P+30)h = 69h 07h2 0Fh3 (P+29)h = 62h 00h (P+31)h = 6Ah 00h (P+2A)h = 63h 11h (P+32)h = 6Bh 11h Number of program or erase operations allowed in Bank Region 2: Bits 0-3: Number of simultaneous program operations Bits 4-7: Number of simultaneous erase operations (P+2B)h = 64h 00h (P+33)h = 6Ch 00h Number of program or erase operations allowed in other banks while a bank in this region is programming Bits 0-3: Number of simultaneous program operations Bits 4-7: Number of simultaneous erase operations (P+2C)h = 65h 00h (P+34)h = 6Dh 00h Number of program or erase operations allowed in other banks while a bank in this region is erasing Bits 0-3: Number of simultaneous program operations Bits 4-7: Number of simultaneous erase operations (P+2D)h = 66h 02h (P+35)h = 6Eh 01h Types of erase block regions in Bank Region 2 n = number of erase block regions with contiguous same-size erase blocks. Symmetrically blocked banks have one blocking region.4 (P+2E)h = 67h 06h (P+36)h = 6Fh 07h (P+2F)h = 68h 00h (P+37)h = 70h 00h Bank Region 2 Erase Block Type 1 Information Bits 0-15: n+1 = number of identical-sized erase blocks Bits 16-31: n×256 = number of bytes in erase block region (P+30)h = 69h 00h (P+38)h = 71h 00h (P+31)h = 6Ah 01h (P+39)h = 72h 01h (P+32)h = 6Bh 64h (P+3A)h = 73h 64h (P+33)h = 6Ch 00h (P+3B)h = 74h 00h (P+34)h = 6Dh 01h (P+3C)h = 75h 01h Bank Region 2 (Erase Block Type 1): BIts per cell, internal ECC Bits 0-3: bits per cell in erase region Bit 4: reserved for “internal ECC used” BIts 5-7: reserved (P+35)h = 6Eh 03h (P+3D)h = 76h 03h Bank Region 2 (Erase Block Type 1): page mode and synchronous mode capabilities (defined in Table 40) Bit 0: Page-mode reads permitted Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted Bits 3-7: reserved (P+36)h = 6Fh 07h (P+37)h = 70h 00h (P+38)h = 71h 20h (P+39)h = 72h 00h PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN Description Number of identical banks within Bank Region 2 Bank Region 2 (Erase Block Type 1) Minimum block erase cycles × 1000 Bank Region 2 Erase Block Type 2 Information Bits 0-15: n+1 = number of identical-sized erase blocks Bits 16-31: n×256 = number of bytes in erase block region 92 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix B: Common Flash Interface Table 43: Bank and Erase Block Region 2 Information (Continued) See Note 1 M58WR032KT, M58WR064KT M58WR032KB, M58WR064KB Offset Data Offset Data Description (P+3A)h = 73h 64h (P+3B)h = 74h 00h (P+3C)h = 75h 01h Bank Region 2 (Erase Block Type 2): BIts per cell, internal ECC Bits 0-3: bits per cell in erase region Bit 4: reserved for “internal ECC used” BIts 5-7: reserved (P+3D)h = 76h 03h Bank Region 2 (Erase Block Type 2): page mode and synchronous mode capabilities (defined in Table 40) Bit 0: Page-mode reads permitted Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted Bits 3-7: reserved Bank Region 2 (Erase Block Type 2) Minimum block erase cycles × 1000 (P+3E)h = 77h (P+3E)h = 77h Feature Space definitions (P+3F)h = 78h (P+3F)h = 78h Reserved Notes: 1. 2. 3. 4. The variable P is a pointer which is defined at CFI offset 15h (See Table 35). Applies to M58WR032KB. Applies to M58WR064KB. Bank Regions. There are two Bank Regions, see Tables 30, 31, 32 and 33. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 93 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix C: Flowcharts and Pseudo Codes Appendix C: Flowcharts and Pseudo Codes Figure 20: Program Flowchart and Pseudo Code Start program_command (addressToProgram, dataToProgram) {: " writeToFlash (addressToProgram, 0x40); /*writeToFlash (addressToProgram, 0x10);*/ /*see note (3)*/ " writeToFlash (addressToProgram, dataToProgram) ; /*Memory enters read status state after the Program Command*/ Write 40h or 10h (3) Write Address & Data do { status_register=readFlash (addressToProgram); "see note (3)"; /* CE# or OE# must be toggled*/ Read Status Register (3) NO SR7 = 1 } while (status_register.SR7== 0) ; YES SR3 = 0 NO VPP Invalid Error (1, 2) if (status_register.SR3==1) /*VPP invalid error */ error_handler ( ) ; NO Program Error (1, 2) if (status_register.SR4==1) /*program error */ error_handler ( ) ; NO Program to Protected Block Error (1, 2) YES SR4 = 0 YES SR1 = 0 if (status_register.SR1==1) /*program to protect block error */ error_handler ( ) ; YES } End AI06170b Notes: 1. Status check of SR1 (Protected Block), SR3 (VPP Invalid) and SR4 (Program Error) can be made after each program operation or after a sequence. 2. If an error is found, the Status Register must be cleared before further PROGRAM/ERASE CONTROLLER operations. 3. Any address within the bank can equally be used. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 94 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix C: Flowcharts and Pseudo Codes Figure 21: DOUBLE WORD PROGRAM Flowchart and Pseudo Code Start Write 35h double_word_program_command (addressToProgram1, dataToProgram1, addressToProgram2, dataToProgram2) { writeToFlash (addressToProgram1, 0x35); /*see note (4)*/ writeToFlash (addressToProgram1, dataToProgram1) ; /*see note (3) */ writeToFlash (addressToProgram2, dataToProgram2) ; /*see note (3) */ /*Memory enters read status state after the Program command*/ Write Address 1 & Data 1 (3, 4) Write Address 2 & Data 2 (3) do { status_register=readFlash (addressToProgram) ; "see note (4)" /* CE# or OE# must be toggled*/ Read Status Register (4) SR7 = 1 NO } while (status_register.SR7== 0) ; YES SR3 = 0 NO VPP Invalid Error (1, 2) if (status_register.SR3==1) /*VPP invalid error */ error_handler ( ) ; NO Program Error (1, 2) if (status_register.SR4==1) /*program error */ error_handler ( ) ; NO Program to Protected Block Error (1, 2) YES SR4 = 0 YES SR1 = 0 if (status_register.SR1==1) /*program to protect block error */ error_handler ( ) ; YES } End AI06171b Notes: 1. Status check of SR1 (Protected Block), SR3 (VPP Invalid) and SR4 (Program Error) can be made after each program operation or after a sequence. 2. If an error is found, the Status Register must be cleared before further PROGRAM/ERASE operations. 3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0. 4. Any address within the bank can equally be used. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 95 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix C: Flowcharts and Pseudo Codes Figure 22: QUADRUPLE WORD PROGRAM Flowchart and Pseudo Code Start quadruple_word_program_command (addressToProgram1, dataToProgram1, addressToProgram2, dataToProgram2, addressToProgram3, dataToProgram3, addressToProgram4, dataToProgram4) { writeToFlash (addressToProgram1, 0x56); /*see note (4) */ Write 56h Write Address 1 & Data 1 (3, 4) writeToFlash (addressToProgram1, dataToProgram1) ; /*see note (3) */ Write Address 2 & Data 2 (3) writeToFlash (addressToProgram2, dataToProgram2) ; /*see note (3) */ writeToFlash (addressToProgram3, dataToProgram3) ; /*see note (3) */ Write Address 3 & Data 3 (3) writeToFlash (addressToProgram4, dataToProgram4) ; /*see note (3) */ Write Address 4 & Data 4 (3) /*Memory enters read status state after the Program command*/ do { status_register=readFlash (addressToProgram) ; /"see note (4) "/ /* CE# or OE# must be toggled*/ Read Status Register (4) SR7 = 1 NO } while (status_register.SR7== 0) ; YES SR3 = 0 NO VPP Invalid Error (1, 2) if (status_register.SR3==1) /*VPP invalid error */ error_handler ( ) ; NO Program Error (1, 2) if (status_register.SR4==1) /*program error */ error_handler ( ) ; NO Program to Protected Block Error (1, 2) YES SR4 = 0 YES SR1 = 0 if (status_register.SR==1) /*program to protect block error */ error_handler ( ) ; YES } End AI06977b Notes: 1. Status check of SR1 (Protected Block), SR3 (VPP Invalid) and SR4 (Program Error) can be made after each program operation or after a sequence. 2. If an error is found, the Status Register must be cleared before further PROGRAM/ERASE operations. 3. Address 1 to Address 4 must be consecutive addresses differing only for bits A0 and A1. 4. Any address within the bank can equally be used. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 96 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix C: Flowcharts and Pseudo Codes Figure 23: PROGRAM SUSPEND STATUS and RESUME Flowchart and Pseudo Code Start program_suspend_command ( ) { writeToFlash (any_address, 0xB0) ; Write B0h writeToFlash (bank_address, 0x70) ; /* read status register to check if program has already completed */ Write 70h do { status_register=readFlash (bank_address) ; /* CE# or OE# must be toggled*/ Read Status Register SR7 = 1 NO } while (status_register.SR7== 0) ; YES SR2 = 1 NO Program Complete if (status_register.SR2==0) /*program completed */ { writeToFlash (bank_address, 0xFF) ; read_data ( ) ; /*The device returns to Read Array (as if program/erase suspend was not issued).*/ Write FFh YES Read Data } else Write FFh { writeToFlash (bank_address, 0xFF) ; Read data from another address read_data ( ); /*read data from another address*/ writeToFlash (any_address, 0xD0) ; /*write 0xD0 to resume program*/ Write D0h writeToFlash (bank_address, 0x70) ; /*read status register to check if program has completed */ Write 70h(1) } Program Continues with Bank in Read Status Register Mode } AI10117b Notes: 1. The READ STATUS REGISTER command (Write 70h) can be issued just before or just after the Program Resume command. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 97 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix C: Flowcharts and Pseudo Codes Figure 24: BLOCK ERASE Flowchart and Pseudo Code Start erase_command ( blockToErase ) { writeToFlash (blockToErase, 0x20) ; /*see note (2) */ Write 20h (2) writeToFlash (blockToErase, 0xD0) ; /* only A12-A20 are significant */ /* Memory enters read status state after the Erase Command */ Write Block Address & D0h do { status_register=readFlash (blockToErase) ; /* see note (2) */ /* CE# or OE# must be toggled*/ Read Status Register (2) SR7 = 1 NO } while (status_register.SR7== 0) ; YES SR3 = 0 NO VPP Invalid Error (1) YES Command Sequence Error (1) if (status_register.SR3==1) /*VPP invalid error */ error_handler ( ) ; YES SR4, SR5 = 1 if ( (status_register.SR4==1) && (status_register.SR5==1) ) /* command sequence error */ error_handler ( ) ; NO SR5 = 0 NO Erase Error (1) if ( (status_register.SR5==1) ) /* erase error */ error_handler ( ) ; YES SR1 = 0 NO Erase to Protected Block Error (1) if (status_register.SR1==1) /*program to protect block error */ error_handler ( ) ; YES } End AI13431 Notes: 1. If an error is found, the Status Register must be cleared before further PROGRAM/ERASE operations. 2. Any address within the bank can be used also. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 98 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix C: Flowcharts and Pseudo Codes Figure 25: ERASE SUSPEND and RESUME Flowchart and Pseudo Code Start erase_suspend_command ( ) { writeToFlash (bank_address, 0xB0) ; Write B0h writeToFlash (bank_address, 0x70) ; /* read status register to check if erase has already completed */ Write 70h do { status_register=readFlash (bank_address) ; /* CE# or OE# must be toggled*/ Read Status Register SR7 = 1 NO } while (status_register.SR7== 0) ; YES SR6 = 1 NO Erase Complete if (status_register.SR6==0) /*erase completed */ { writeToFlash (bank_address, 0xFF) ; Write FFh read_data ( ) ; /*The device returns to Read Array (as if program/erase suspend was not issued).*/ Read Data YES } Write FFh else { writeToFlash (bank_address, 0xFF) ; Read data from another block, Program, read_program_data ( ); Set Configuration Register or /*read or program data from another block*/ Block Lock/Unlock/Lock-Down writeToFlash (bank_address, 0xD0) ; /*write 0xD0 to resume erase*/ Write D0h writeToFlash (bank_address, 0x70) ; /*read status register to check if erase has completed */ Write 70h(1) } } Erase Continues with Bank in Read Status Register Mode Notes: AI10116d 1. The READ STATUS REGISTER command (Write 70h) can be issued just before or just after the ERASE RESUME command. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 99 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix C: Flowcharts and Pseudo Codes Figure 26: Locking Operations Flowchart and Pseudo Code Start locking_operation_command (address, lock_operation) { writeToFlash (address, 0x60) ; /*configuration setup*/ /* see note (1) */ Write 60h (1) if (lock_operation==LOCK) /*to protect the block*/ writeToFlash (address, 0x01) ; else if (lock_operation==UNLOCK) /*to unprotect the block*/ writeToFlash (address, 0xD0) ; else if (lock_operation==LOCK-DOWN) /*to lock the block*/ writeToFlash (address, 0x2F) ; Write 01h, D0h or 2Fh writeToFlash (address, 0x90) ; /*see note (1) */ Write 90h (1) Read Block Lock States Locking change confirmed? if (readFlash (address) ! = locking_state_expected) error_handler () ; /*Check the locking state (see Read Block Signature table )*/ NO YES writeToFlash (address, 0xFF) ; /*Reset to Read Array mode*/ /*see note (1) */ Write FFh (1) } End AI06176b Notes: 1. Any address within the bank can equally be used. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 100 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix C: Flowcharts and Pseudo Codes Figure 27: PROTECTION REGISTER PROGRAM Flowchart and Pseudo Code Start protection_register_program_command (addressToProgram, dataToProgram) {: writeToFlash (addressToProgram, 0xC0) ; /*see note (3) */ Write C0h (3) writeToFlash (addressToProgram, dataToProgram) ; /*Memory enters read status state after the Program Command*/ Write Address & Data do { status_register=readFlash (addressToProgram) ; /* see note (3) */ /* CE# or OE# must be toggled*/ Read Status Register (3) SR7 = 1 NO } while (status_register.SR7== 0) ; YES SR3 = 0 NO VPP Invalid Error (1, 2) if (status_register.SR3==1) /*VPP invalid error */ error_handler ( ) ; NO Program Error (1, 2) if (status_register.SR4==1) /*program error */ error_handler ( ) ; NO Program to Protected Block Error (1, 2) YES SR4 = 0 YES SR1 = 0 if (status_register.SR1==1) /*program to protect block error */ error_handler ( ) ; YES } End AI06177b Notes: 1. Status check of SR1 (Protected Block), SR3 (VPP Invalid) and SR4 (Program Error) can be made after each program operation or after a sequence. 2. If an error is found, the Status Register must be cleared before further PROGRAM/ERASE CONTROLLER operations. 3. Any address within the bank can equally be used. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 101 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix C: Flowcharts and Pseudo Codes Figure 28: ENHANCED FACTORY PROGRAM Flowchart SETUP PHASE VERIFY PHASE Start Write PD1 Address WA1(1) Write 30h Address WA1 Write D0h Address WA1 Read Status Register Read Status Register NO SR0 = 0? NO Check SR4, SR3 and SR1 for program, VPP and Lock Errors SR7 = 0? PROGRAM PHASE Write PD2 Address WA2(1) YES SR0 = 0? Exit YES NO YES Read Status Register Write PD1 Address WA1 NO SR0 = 0? Read Status Register YES Write PDn Address WAn(1) NO SR0 = 0? YES Write PD2 Address WA2(1) Read Status Register Read Status Register SR0 = 0? NO YES SR0 = 0? NO Address =/ Block WA1 YES EXIT PHASE Write PDn Address WAn(1) Read Status Register Read Status Register SR7 = 1? NO YES SR0 = 0? NO Check Status Register for Errors YES Address =/ Block WA1 End AI06160b Notes: 1. Address can remain Starting Address WA1 or be incremented. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 102 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix C: Flowcharts and Pseudo Codes ENHANCED FACTORY PROGRAM Pseudo Code efp_command(addressFlow,dataFlow,n) /* n is the number of data to be programmed */ { /* setup phase */ writeToFlash(addressFlow[0],0x30); writeToFlash(addressFlow[0],0xD0); status_register=readFlash(any_address); if (status_register.SR7==1){ /*EFP aborted for an error*/ if (status_register.SR4==1) /*program error*/ error_handler(); if (status_register.SR3==1) /*VPP invalid error*/ error_handler(); if (status_register.SR1==1) /*program to protect block error*/ error_handler(); } else{ /*Program Phase*/ do{ status_register=readFlash(any_address); /* CE# or OE# must be toggled*/ } while (status_register.SR0==1) /*Ready for first data*/ for (i=0; i++; i< n){ writeToFlash(addressFlow[i],dataFlow[i]); /* status register polling*/ do{ status_register=readFlash(any_address); /* CE# or OE# must be toggled*/ } while (status_register.SR0==1); /* Ready for a new data */ } writeToFlash(another_block_address,any_data); /* Verify Phase */ for (i=0; i++; i< n){ writeToFlash(addressFlow[i],dataFlow[i]); /* status register polling*/ do{ status_register=readFlash(any_address); /* CE# or OE# must be toggled*/ } while (status_register.SR0==1); /* Ready for a new data */ } writeToFlash(another_block_address,any_data); /* exit program phase */ /* Exit Phase */ /* status register polling */ do{ status_register=readFlash(any_address); /* E or G must be toggled */ } while (status_register.SR7==0); if (status_register.SR4==1) /*program failure error*/ error_handler(); if (status_register.SR3==1) /*VPP invalid error*/ error_handler(); if (status_register.SR1==1) /*program to protect block error*/ error_handler(); } } PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 103 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix C: Flowcharts and Pseudo Codes Figure 29: QUADRUPLE ENHANCED FACTORY PROGRAM Flowchart SETUP PHASE LOAD PHASE Start Write 75h Address WA1 FIRST LOAD PHASE Write PD1 Address WA1 Read Status Register Write PD1 Address WA1(1) Write PD2 Address WA2(2) Write PD3 Address WA3(2) NO SR7 = 0? Write PD4 Address WA4(2) YES EXIT PHASE Check SR4, SR3 and SR1 for program, VPP and Lock Errors PROGRAM AND VERIFY PHASE Read Status Register Address = / Block WA1 Exit NO SR0 = 0? YES Check SR4 for Programming Errors End Last Page? NO YES AI06178c Notes: 1. Address can remain Starting Address WA1 (in which case the next page is programmed) or can be any address in the same block. 2. The address is only checked for the first word of each page as the order to program the words is fixed, so subsequent words in each page can be written to any address. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 104 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix C: Flowcharts and Pseudo Codes QUADRUPLE ENHANCED FACTORY PROGRAM Pseudo Code quad_efp_command(addressFlow,dataFlow,n) /* n is the number of pages to be programmed.*/ { /* Setup phase */ writeToFlash(addressFlow[0],0x75); for (i=0; i++; i< n){ /*Data Load Phase*/ /*First Data*/ writeToFlash(addressFlow[i],dataFlow[i,0]); /*at the first data of the first page, Quad-EFP may be aborted*/ if (First_Page) { status_register=readFlash(any_address); if (status_register.SR7==1){ /*EFP aborted for an error*/ if (status_register.SR4==1) /*program error*/ error_handler(); if (status_register.SR3==1) /*VPP invalid error*/ error_handler(); if (status_register.SR1==1) /*program to protect block error*/ error_handler(); } } /*2nd data*/ writeToFlash(addressFlow[i],dataFlow[i,1]); /*3rd data*/ writeToFlash(addressFlow[i],dataFlow[i,2]); /*4th data*/ writeToFlash(addressFlow[i],dataFlow[i,3]); /* Program&Verify Phase */ do{ status_register=readFlash(any_address); /* E or G must be toggled*/ }while (status_register.SR0==1) } /* Exit Phase */ writeToFlash(another_block_address,any_data); /* status register polling */ do{ status_register=readFlash(any_address); /* CE# or OE# must be toggled */ } while (status_register.SR7==0); if (status_register.SR1==1) /*program to protected block error*/ error_handler(); if (status_register.SR3==1) /*VPP invalid error*/ error_handler(); if (status_register.SR4==1) /*program failure error*/ error_handler(); } } PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 105 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix C: Flowcharts and Pseudo Codes Appendix A Table 44: Command Interface State Tables Command Interface States - Modify Table, Next State See Note 1 Command Input Current CI State Read Array2 (FFh) Ready Ready DWP, Block QWP WP Setup3,4 Erase EFP 3,4 Setup3,4 Setup setup (35h, (30h) (10/40h) (20h) 56h) Program Program Setup Setup Lock/CR Setup OTP EFP Quad-EFP Setup Setup Ready IS in OTP busy OTP Busy IS in OTP busy OTP busy Setup Program Busy Busy Suspend Program busy IS in Program busy Program busy PS IS in Program Suspend Program Busy Ready (error) Erase Busy Erase Busy ES Program in ES IS in Erase Suspend Setup Program Busy in Erase Suspend Program Busy in ES IS in Program Busy in Erase Suspend Erase Suspend Program Busy PS in ES in ES Program Busy in Erase Suspend Program Busy in Erase Suspend IS in Program busy in ES PS in ES IS in Program suspend in ES IS in PS in ES Lock/CR Setup in ES Erase Busy Erase Busy Erase Suspend Suspend Ready (error) ES Erase busy IS in ES Busy Program Suspend Erase Busy IS in Erase busy IS in Erase busy Progra m in ES Program busy Program suspend Setup Suspend PS Program Busy IS in PS Busy Ready (Lock Error) OTP Busy OTP Busy IS in Program busy Erase Ready Ready (Lock Error) Setup Busy Progra m Erase Setup QuadEFP Setup (75h) Erase Read Confirm, P/E Electronic Resume, Block Clear signature Unlock Progra Read Status , Read CFI confirm, EFP m/ Erase Status Register Query 5 Confirm Suspend Register (90h, 98h) (D0h) (B0h) (70h) (50h) Program Busy in ES Program Suspend in Erase Suspend Program Suspend in Erase Suspend Erase Suspend (Lock Error) PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN ES 106 Erase Suspend (Lock Error) Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix C: Flowcharts and Pseudo Codes Table 44: Command Interface States - Modify Table, Next State (Continued) See Note 1 Command Input Current CI State EFP Read Array2 (FFh) Setup DWP, Block QWP WP Setup3,4 Erase EFP Setup3,4 Setup setup3,4 (35h, (30h) (10/40h) (20h) 56h) Ready (error) EFP Busy Busy Quad EFP QuadEFP Setup (75h) Erase Read Confirm, P/E Electronic Resume, Block Clear signature Unlock Progra Read Status , Read CFI confirm, EFP m/ Erase Status Register Query 5 Confirm Suspend Register (90h, 98h) (D0h) (B0h) (70h) (50h) EFP Verify EFP Verify6 Setup Quad EFP Busy6 Busy Quad EFP Busy6 Notes: Ready (error) Busy6 1. CI = Command Interface, CR = Configuration Register, EFP = ENHANCED FACTORY PROGRAM, Quad EFP = QUADRUPLE ENHANCED FACTORY PROGRAM, DWP = DOUBLE WORD PROGRAM, QWP = QUADRUPLE WORD PROGRAM, P/EC = PROGRAM/ERASE CONTROLLER, PS = PROGRAM SUSPEND, ES = ERASE SUSPEND, IS = ILLEGAL STATE. 2. At Power-Up, all banks are in READ ARRAY mode. A READ ARRAY command issued to a busy bank, results in undetermined data output. 3. The two cycle command should be issued to the same bank address. 4. If the P/EC is active, both cycles are ignored. 5. The CLEAR STATUS REGISTER command clears the Status Register error bits except when the P/EC is busy or suspended. 6. EFP and Quad EFP are allowed only when Status Register bit SR0 is set to ‘0’.EFP and Quad EFP are busy if Block Address is first EFP Address. Any other commands are treated as data. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 107 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix C: Flowcharts and Pseudo Codes Table 45: Command Interface States - Modify Table, Next Output See Note 1 Command Input2 DWP, Block Read QWP Erase 3 4,5 Array Setup Setup4,5 Current CI State (FFh) (35h, 56h) (20h) EFP Setup (30h) QuadEFP Setup (75h) Erase Confirm P/E Resume, Block Unlock Program/ Read confirm, EFP Erase Status Clear Status Confirm Suspend Register Register6 (D0h) (B0h) (70h) (50h) Program Setup Read Electronic signature, Read CFI Query (90h, 98h) Status Register Erase Setup OTP Setup Program Setup in Erase Suspend EFP Setup EFP Busy EFP Verify Quad EFP Setup Quad EFP Busy Lock/CR Setup Lock/CR Setup in Erase Suspend OTP Busy Array Status Register Output Unchanged Ready Program Busy Status Register Output Unchanged Status Register Electronic Signature/CFI Erase Busy Program/Erase Suspend Program Busy in Erase Suspend Program Suspend in Erase Suspend Illegal State Output Unchanged Notes: 1. CI = Command Interface, CR = Configuration Register, EFP = ENHANCED FACTORY PROGRAM, Quad EFP = QUADRUPLE ENHANCED FACTORY PROGRAM, DWP = DOUBLE WORD PROGRAM, QWP = QUADRUPLE WORD PROGRAM, P/EC = PROGRAM/ERASE CONTROLLER, IS = ILLEGAL STATE, ES = ERASE SUSPEND, PS = PROGRAM SUSPEND. 2. The output state shows the type of data that appears at the outputs if the bank address is the same as the command address. A bank can be placed in READ ARRAY, READ STATUS REGISTER, READ ELECTRONIC SIGNATURE or READ CFI QUERY mode, depending on the command issued. Each bank remains in its last output state until a new command is issued. The next state does not depend on the bank’s output state. 3. At Power-Up, all banks are in READ ARRAY mode. A READ ARRAY command issued to a busy bank, results in undetermined data output. 4. The two cycle command should be issued to the same bank address. 5. If the P/EC is active, both cycles are ignored. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 108 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix C: Flowcharts and Pseudo Codes 6. The CLEAR STATUS REGISTER command clears the Status Register error bits except when the P/EC is busy or suspended. Table 46: Command Interface States - Lock Table, Next State See Note 1 Command Input Current CI State Lock/CR Setup2 (60h) OTP Setup2 (C0h) Ready Lock/CR Setup OTP Setup Lock/CR Setup OTP Ready (Lock error) N/A Ready (Lock error) N/A OTP Busy IS in OTP busy OTP Busy Ready OTP Busy IS Ready Program Busy N/A IS in Program busy Program Busy Ready Program busy IS in PS IS Ready Program Suspend N/A IS in PS Program Suspend N/A Setup Ready (error) N/A Busy IS in Erase Busy Erase Busy IS in Erase Busy Suspend Lock/CR Setup in ES IS in Erase Suspend Erase Suspend IS in Program busy in ES Program Busy in Erase Suspend IS in PS in ES ES IS in ES Program Suspend in Erase Suspend N/A Program Suspend in Erase Suspend Erase Suspend (Lock error) Erase Suspend Setup Erase Suspend (Lock error) Ready (error) 5 Busy EFP Busy Verify EFP Verify5 Quad EFP Busy5 Busy N/A N/A 5 EFP Verify EFP Busy Ready EFP Verify5 Ready Ready Quad EFP Busy4 Ready Quad EFP Busy5 Setup Notes: N/A Program busy in ES IS in PS in ES Lock/CR Setup in ES N/A Program Busy in Erase Suspend IS in Program busy in ES Suspend IS Ready Erase Suspend Setup Busy Ready Erase Busy IS in ES QuadEFP P/E. C. Operation Illegal Command4 Completed Setup Suspend EFP EFP Exit, Quad EFP Exit3 IS in OTP busy Busy Program in Erase Suspend Set CR Confir m (03h) Ready IS in Program busy Erase Block LockDown Confirm (2Fh) Ready Setup Busy Program Block Lock Confirm (01h) N/A N/A 1. CI = Command Interface, CR = Configuration Register, EFP = ENHANCED FACTORY PROGRAM, Quad EFP = QUADRUPLE ENHANCED FACTORY PROGRAM, P/EC = PROGRAM/ERASE CONTROLLER, IS = ILLEGAL STATE, ES = ERASE SUSPEND, PS = PROGRAM SUSPEND. 2. If the P/EC is active, both cycles are ignored. 3. EFP and Quad EFP exit when block address is different from first block address. 4. Illegal commands are those not defined in the command set. 5. EFP and Quad EFP are allowed only when Status Register bit SR0 is set to ‘0’. EFP and Quad EFP are busy if Block Address is first EFP Address. Any other commands are treated as data. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 109 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Appendix C: Flowcharts and Pseudo Codes Table 47: Command Interface States - Lock Table, Next Output See Note 1 Command Input Current CI State Lock/CR Setup2 (60h) OTP Setup (C0h) 2 Block Lock Confirm (01h) Program Setup Block LockDown Confirm (2Fh) Set CR Confirm (03h) EFP Exit, Quad EFP Exit3 Illegal Command4 Status Register P/E. C. Operation Completed Output Unchanged Erase Setup OTP Setup Program Setup in Erase Suspend EFP Setup EFP Busy EFP Verify Quad EFP Setup Quad EFP Busy Lock/CR Setup Status Register Array Status Register Lock/CR Setup in Erase Suspend OTP Busy Status Register Output Unchanged Ready Array Output Unchanged Program Busy Erase Busy Program/Erase Suspend Program Busy in Erase Suspend Program Suspend in Erase Suspend Illegal State Output Unchanged Notes: 1. CI = Command Interface, CR = Configuration Register, EFP = ENHANCED FACTORY PROGRAM, Quad EFP = QUADRUPLE ENHANCED FACTORY PROGRAM, P/E. C. = PROGRAM/ ERASE CONTROLLER. 2. If the P/EC is active, both cycles are ignored. 3. EFP and Quad EFP exit when Block Address is different from first Block Address. 4. Illegal commands are those not defined in the command set. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash - Rev. G 10/11 EN 110 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Revision History Revision History Rev. G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10/11 • Applied Micron branding and style. • Removed M58WR016KT/B and related info. • Removed ZQ package (FBGA88 8 x 10 mm, 0.8 mm pitch). Rev. 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .04/09 • Added the following information to support automotive: – “Automotive Certified Parts Available” on cover page; – “7A = Automotive Certified -40 to 85 °C” to order information. Rev. 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11/08 • Replaced references to ECOPACK with RoHS compliant; • Changed FBGA88 package part number from ZAQ to ZQ; • Changed FBGA88 package thickness from 1.2mm to 1.0mm. Rev. 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .04/08 • Changed several values in Table 22: DC characteristics - currents. • Applied Numonyx branding. Rev. 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .03/08 • Added the ZAQ package information in Figure 3: TFBGA88 connections (top view through package), Figure 22: VFBGA88 8x10mm - 8 x 10 ball array, 0.8 mm pitch, bottom view outline, Table 30: VFBGA88 8 x 10 mm - 8 x 10 ball array, 0.8 mm pitch, package data, and Table 31: Ordering information scheme. Changed the IDD2 values from 2 and 10 to 15 and 50 respectively in Table 22: DC characteristics - currents. Removed tLHGL from Figure 12: Asynchronous random access read AC waveforms, Figure 13: Asynchronous page read AC waveforms, and Table 22: DC characteristics currents. Rev. 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11/07 • Changed Section 6.3.1 through Section 6.3.4, and Section 6.4.1 through Section 6.4.4 to third-level headings. Changed NOT VALID to VALID for the DQ0-DQ15 timing in Figure 16: Synchronous burst read suspend AC waveforms. Changed the Synchronous burst read mode value from 86 MHz to 66 MHz in the Features on page 1 and in Section 1: Description. Removed the 60 ns speed class from the entire document, specifically Table 11: Latency settings, Table 20: Operating and AC measurement conditions, Table 24: Asynchronous read AC characteristics, Table 25: Synchronous read AC characteristics, Table 26: Write AC characteristics, Write Enable controlled, Table 27: Write AC characteristics, Chip Enable controlled, Table 28: Reset and powerup AC characteristics, and Table 31: Ordering information scheme. Deleted the 86 MHz currents from Table 22: DC characteristics - currents and Table 25. Changed the t KHQX value from 3 ns to 4 ns in Table 25. Rev. 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .02/07 • Initial release. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. PDF: 09005aef848ee55b / Source: 09005aef848ee58b M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 multi bank burst, Flash - Rev. G 10/11 EN 111 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved.