MT16HTF25664AZ-667H1

1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM Features DDR2 SDRAM UDIMM MT16HTF12864AZ – 1GB MT16HTF25664AZ – 2GB MT16HTF51264AZ – 4GB Features Figure 1: 240-Pin UDIMM (MO-237 R/C E) • 240-pin, unbuffered dual in-line memory module • Fast data transfer rates: PC2-8500, PC2-6400, PC2-5300, PC2-4200, or PC2-3200 • 1GB (128 Meg x 64), 2GB (256 Meg x 64), 4GB (512 Meg x 64) • VDD = V DDQ = 1.8V • VDDSPD = 1.7–3.6V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Multiple internal device banks for concurrent operation • Programmable CAS latency (CL) • Posted CAS additive latency (AL) • WRITE latency = READ latency - 1 tCK • Programmable burst lengths (BL): 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination (ODT) • Serial presence-detect (SPD) with EEPROM • Gold edge contacts • Dual rank • Halogen-free Module height: 30mm (1.18in) Options Marking • Operating temperature – Commercial (0°C ≤ T A ≤ +70°C) – Industrial (–40°C ≤ T A ≤ +85°C)1 • Package – 240-pin DIMM (halogen-free) • Frequency/CL2 – 1.875ns @ CL = 7 (DDR2-1066)3 – 2.5ns @ CL = 5 (DDR2-800) – 2.5ns @ CL = 6 (DDR2-800) – 3ns @ CL = 5 (DDR2-667) Notes: None I Z -1GA -80E -800 -667 1. Contact Micron for industrial temperature module offerings. 2. CL = CAS (READ) latency. 3. Not recommended for new designs. Table 1: Key Timing Parameters Data Rate (MT/s) tRCD tRP tRC CL = 3 (ns) (ns) (ns) 533 400 13.125 13.125 58.125 800 533 400 12.5 12.5 57.5 667 533 400 15 15 60 – 667 553 400 15 15 60 PC2-4200 – – 553 400 15 15 55 PC2-3200 – – 400 400 15 15 55 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. Speed Grade Industry Nomenclature CL = 7 CL = 6 CL = 5 CL = 4 -1GA PC2-8500 1066 800 667 -80E PC2-6400 800 -800 PC2-6400 800 -667 PC2-5300 -53E -40E PDF: 09005aef83b82bc1 htf16c128_256_512x64az – Rev. E 4/14 EN Products and specifications discussed herein are subject to change by Micron without notice. 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM Features Table 2: Addressing Parameter 1GB 2GB 4GB 8K 8K 8K 16K A[13:0] 16K A[13:0] 32K A[14:0] Device bank address 4 BA[1:0] 8 BA[2:0] 8 BA[2:0] Device configuration Refresh count Row address 512Mb (64 Meg x 8) 1Gb (128 Meg x 8) 2Gb (256 Meg x 8) Column address 1K A[9:0] 1K A[9:0] 1K A[9:0] Module rank address 2 S#[1:0] 2 S#[1:0] 2 S#[1:0] Table 3: Part Numbers and Timing Parameters – 1GB Modules Base device: MT47H64M8,1 512Mb DDR2 SDRAM Module Part Number2 Density Configuration Module Bandwidth Memory Clock/ Data Rate Clock Cycles (CL-tRCD-tRP) MT16HTF12864A(I)Z-80E__ 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT16HTF12864A(I)Z-800__ 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT16HTF12864A(I)Z-667__ 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Module Bandwidth Memory Clock/ Data Rate Clock Cycles (CL-tRCD-tRP) Table 4: Part Numbers and Timing Parameters – 2GB Modules Base device: MT47H128M8,1 1Gb DDR2 SDRAM Module Part Number2 Density Configuration MT16HTF25664A(I)Z-1GA__ 2GB 256 Meg x 64 8.5 GB/s 1.875ns/1066 MT/s 7-7-7 MT16HTF25664A(I)Z-80E__ 2GB 256 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT16HTF25664A(I)Z-800__ 2GB 256 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT16HTF25664A(I)Z-667__ 2GB 256 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Module Bandwidth Memory Clock/ Data Rate Clock Cycles (CL-tRCD-tRP) Table 5: Part Numbers and Timing Parameters – 4GB Modules Base device: MT47H256M8,1 2Gb DDR2 SDRAM Module Part Number2 Density Configuration MT16HTF51264A(I)Z-1GA__ 4GB 512 Meg x 64 8.5 GB/s 1.875ns/1066 MT/s 7-7-7 MT16HTF51264A(I)Z-80E__ 4GB 512 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT16HTF51264A(I)Z-800__ 4GB 512 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT16HTF51264A(I)Z-667__ 4GB 512 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Notes: 1. The data sheet for the base device can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT16HTF25664AZ-800M1. PDF: 09005aef83b82bc1 htf16c128_256_512x64az – Rev. E 4/14 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM Pin Assignments Pin Assignments Table 6: Pin Assignments 240-Pin UDIMM Front 240-Pin UDIMM Back Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol 1 VREF 31 DQ19 61 A4 91 VSS 121 VSS 151 VSS 181 VDDQ 211 DM5 2 VSS 32 VSS 62 VDDQ 92 DQS5# 122 DQ4 152 DQ28 182 A3 212 NC 3 DQ0 33 DQ24 63 A2 93 DQS5 123 DQ5 153 DQ29 183 A1 213 VSS 4 DQ1 34 DQ25 64 VDD 94 VSS 124 VSS 154 VSS 184 VDD 214 DQ46 5 VSS 35 VSS 65 VSS 95 DQ42 125 DM0 155 DM3 185 CK0 215 DQ47 6 DQS0# 36 DQS3# 66 VSS 96 DQ43 126 NC 156 NC 186 CK0# 216 VSS 7 DQS0 37 DQS3 67 VDD 97 VSS 127 VSS 157 VSS 187 VDD 217 DQ52 8 VSS 38 VSS 68 NC 98 DQ48 128 DQ6 158 DQ30 188 A0 218 DQ53 9 DQ2 39 DQ26 69 VDD 99 DQ49 129 DQ7 159 DQ31 189 VDD 219 VSS 10 DQ3 40 DQ27 70 A10 100 VSS 130 VSS 160 VSS 190 BA1 220 CK2 11 VSS 41 VSS 71 BA0 101 SA2 131 DQ12 161 NC 191 VDDQ 221 CK2# 12 DQ8 42 NC 72 VDDQ 102 NC 132 DQ13 162 NC 192 RAS# 222 VSS 13 DQ9 43 NC 73 WE# 103 VSS 133 VSS 163 VSS 193 S0# 223 DM6 14 VSS 44 VSS 74 CAS# 104 DQS6# 134 DM1 164 NC 194 VDDQ 224 NC 15 DQS1# 45 NC 75 VDDQ 105 DQS6 135 NC 165 NC 195 ODT0 225 VSS 16 DQS1 46 NC 76 S1# 106 VSS 136 VSS 166 VSS 196 A13 226 DQ54 17 VSS 47 VSS 77 ODT1 107 DQ50 137 CK1 167 NC 197 VDD 227 DQ55 18 NC 48 NC 78 VDDQ 108 DQ51 138 CK1# 168 NC 198 VSS 228 VSS 19 NC 49 NC 79 VSS 109 VSS 139 VSS 169 VSS 199 DQ36 229 DQ60 20 VSS 50 VSS 80 DQ32 110 DQ56 140 DQ14 170 VDDQ 200 DQ37 230 DQ61 21 DQ10 51 VDDQ 81 DQ33 111 DQ57 141 DQ15 171 CKE1 201 VSS 231 VSS 22 DQ11 52 CKE0 82 VSS 112 VSS 142 VSS 172 VDD 202 DM4 232 DM7 23 VSS 53 VDD 83 DQS4# 113 DQS7# 143 DQ20 173 NC 203 NC 233 NC 24 DQ16 54 BA2 84 DQS4 114 DQS7 144 DQ21 174 NF/A141 204 VSS 234 VSS 25 DQ17 55 NC 85 VSS 115 VSS 145 VSS 175 VDDQ 205 DQ38 235 DQ62 26 VSS 56 VDDQ 86 DQ34 116 DQ58 146 DM2 176 A12 206 DQ39 236 DQ63 27 DQS2# 57 A11 87 DQ35 117 DQ59 147 NC 177 A9 207 VSS 237 VSS 28 DQS2 58 A7 88 VSS 118 VSS 148 VSS 178 VDD 208 DQ44 238 VDDSPD 29 VSS 59 VDD 89 DQ40 119 SDA 149 DQ22 179 A8 209 DQ45 239 SA0 30 DQ18 60 A5 90 DQ41 120 SCL 150 DQ23 180 A6 210 VSS 240 SA1 Note: PDF: 09005aef83b82bc1 htf16c128_256_512x64az – Rev. E 4/14 EN 1. Pin 174 is NF for 1GB, 2GB or A14 for 4GB. 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM Pin Descriptions Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 7: Pin Descriptions Symbol Type Description Ax Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. See the Pin Assignments Table for density-specific addressing information. BAx Input Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or PRECHARGE command is being applied. BA define which mode register (MR0, MR1, MR2, and MR3) is loaded during the LOAD MODE command. CKx, CK#x Input Clock: Differential clock inputs. All control, command, and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. CKEx Input Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DDR2 SDRAM. DMx Input Data mask (x8 devices only): DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH, along with that input data, during a write access. Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins. ODTx Input On-die termination: Enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR2 SDRAM. When enabled in normal operation, ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command. Par_In Input Parity input: Parity bit for Ax, RAS#, CAS#, and WE#. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being entered. RESET# Input Reset: Asynchronously forces all registered outputs LOW when RESET# is LOW. This signal can be used during power-up to ensure that CKE is LOW and DQ are High-Z. S#x Input Chip select: Enables (registered LOW) and disables (registered HIGH) the command decoder. SAx Input Serial address inputs: Used to configure the SPD EEPROM address range on the I2C bus. SCL Input Serial clock for SPD EEPROM: Used to synchronize communication to and from the SPD EEPROM on the I2C bus. CBx I/O Check bits. Used for system error detection and correction. DQx I/O Data input/output: Bidirectional data bus. DQSx, DQS#x I/O Data strobe: Travels with the DQ and is used to capture DQ at the DRAM or the controller. Output with read data; input with write data for source synchronous operation. DQS# is only used when differential data strobe mode is enabled via the LOAD MODE command. PDF: 09005aef83b82bc1 htf16c128_256_512x64az – Rev. E 4/14 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM Pin Descriptions Table 7: Pin Descriptions (Continued) Symbol Type SDA I/O Serial data: Used to transfer addresses and data into and out of the SPD EEPROM on the I2C bus. RDQSx, RDQS#x Output Redundant data strobe (x8 devices only): RDQS is enabled/disabled via the LOAD MODE command to the extended mode register (EMR). When RDQS is enabled, RDQS is output with read data only and is ignored during write data. When RDQS is disabled, RDQS becomes data mask (see DMx). RDQS# is only used when RDQS is enabled and differential data strobe mode is enabled. Err_Out# Description Output Parity error output: Parity error found on the command and address bus. (open drain) VDD/VDDQ Supply Power supply: 1.8V ±0.1V. The component VDD and VDDQ are connected to the module VDD. VDDSPD Supply SPD EEPROM power supply: 1.7–3.6V. VREF Supply Reference voltage: VDD/2. VSS Supply Ground. NC – No connect: These pins are not connected on the module. NF – No function: These pins are connected within the module, but provide no functionality. NU – Not used: These pins are not used in specific module configurations/operations. RFU – Reserved for future use. PDF: 09005aef83b82bc1 htf16c128_256_512x64az – Rev. E 4/14 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM Functional Block Diagram Functional Block Diagram Figure 2: Functional Block Diagram S1# VSS S0# VSS DQS0# DQS0 DM0 DQS4# DQS4 DM4 DM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ DQ DQ DQ DQ DQ DQ DQ CS# DQS DQS# DM DQ DQ DQ DQ DQ DQ DQ DQ U1 CS# DQS DM DQS# DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 U18 DQS1# DQS1 DM1 DQ DQ DQ DQ DQ DQ DQ DQ CS# DQS DQS# DM DQ DQ DQ DQ DQ DQ DQ DQ U5 CS# DQS DQS# U14 DQS5# DQS5 DM5 DM DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ DQ DQ DQ DQ DQ DQ DQ CS# DQS DQS# DM DQ DQ DQ DQ DQ DQ DQ DQ U2 CS# DQS DM DQS# DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 U17 DQS2# DQS2 DM2 DQ DQ DQ DQ DQ DQ DQ DQ CS# DQS DQS# DM DQ DQ DQ DQ DQ DQ DQ DQ U6 CS# DQS DQS# U13 DQS6# DQS6 DM6 DM DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQ DQ DQ DQ DQ DQ DQ DQ CS# DQS DQS# DM DQ DQ DQ DQ DQ DQ DQ DQ U3 CS# DQS DM DQS# DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 U16 DQS3# DQS3 DM3 DQ DQ DQ DQ DQ DQ DQ DQ CS# DQS DQS# DM DQ DQ DQ DQ DQ DQ DQ DQ U7 CS# DQS DQS# U12 DQS7# DQS7 DM7 DM DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQ DQ DQ DQ DQ DQ DQ DQ CS# DQS DQS# U4 DM DQ DQ DQ DQ DQ DQ DQ DQ CS# DQS DM DQS# DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 U15 DQ DQ DQ DQ DQ DQ DQ DQ CS# DQS DQS# DM DQ DQ DQ DQ DQ DQ DQ DQ U8 CS# DQS DQS# U11 U10 BA[2/1:0]: SDRAM A[14/13:0]: SDRAM BA[2/1:0] A[14/13:0] RAS# CAS# WE# RAS#: SDRAM CAS#: SDRAM WE#: SDRAM CKE0 CKE0: U1–U8 SPD EEPROM WP A0 A1 SDA A2 CK0 CK0# U4, U5, U13, U14 CK1 CK1# U1–U3, U15–U17 CK2 CK2# U6–U8, U10–U12 VSS SA0 SA1 SA2 VDDSPD SPD EEPROM VDD/VDDQ DDR2 SDRAM VREF DDR2 SDRAM VSS VSS CKE1 SCL DDR2 SDRAM, EEPROM CKE1: U10–U17 VSS ODT0 ODT1 ODT0: U1–U8 VSS ODT1: U10–U17 VSS PDF: 09005aef83b82bc1 htf16c128_256_512x64az – Rev. E 4/14 EN 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM General Description General Description DDR2 SDRAM modules are high-speed, CMOS dynamic random access memory modules that use internally configured 4 or 8-bank DDR2 SDRAM devices. DDR2 SDRAM modules use DDR architecture to achieve high-speed operation. DDR2 architecture is essentially a 4n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR2 SDRAM module effectively consists of a single 4n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. DDR2 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals. A bidirectional data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAM device during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. DDR2 SDRAM modules operate from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. Commands (address and control signals) are registered at every positive edge of CK. Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS, as well as to both edges of CK. Serial Presence-Detect EEPROM Operation DDR2 SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer. System READ/WRITE operations between the master (system logic) and the slave EEPROM device occur via a standard I2C bus using the DIMM’s SCL (clock) SDA (data), and SA (address) pins. Write protect (WP) is connected to V SS, permanently disabling hardware write protection. PDF: 09005aef83b82bc1 htf16c128_256_512x64az – Rev. E 4/14 EN 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM Electrical Specifications Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in the device data sheet are not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. Table 8: Absolute Maximum Ratings Symbol Parameter Min Max Units VDD/VDDQ VDD/VDDQ supply voltage relative to VSS –0.5 2.3 V VIN, VOUT Voltage on any pin relative to VSS –0.5 2.3 V Input leakage current; Any input 0V ≤ VIN ≤ VDD; Address inputs, RAS#, VREF input 0V ≤ VIN ≤ 0.95V; (All other pins not CAS#, WE#, BA under test = 0V) S#, CKE, ODT –80 80 µA II IOZ IVREF TA –40 40 CK0, CK0# –20 20 CK1, CK1#, CK2, CK2# –30 30 DM –10 10 Output leakage current; 0V ≤ VOUT; DQ and ODT DQ, DQS, DQS# are disabled –10 10 µA VREF leakage current; VREF = valid VREF level –32 32 µA 0 70 °C –40 85 °C 0 85 °C –40 95 °C Module ambient operating temperature Commercial Industrial 1 TC DDR2 SDRAM component operating temperature2 Notes: PDF: 09005aef83b82bc1 htf16c128_256_512x64az – Rev. E 4/14 EN Commercial Industrial 1. The refresh rate is required to double when TC exceeds 85°C. 2. For further information, refer to technical note TN-00-08: "Thermal Applications," available on Micron’s Web site. 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM DRAM Operating Conditions DRAM Operating Conditions Recommended AC operating conditions are given in the DDR2 component data sheets. Component specifications are available on Micron's Web site. Module speed grades correlate with component speed grades. Table 9: Module and Component Speed Grades DDR2 components may exceed the listed module speed grades; module may not be available in all listed speed grades Module Speed Grade Component Speed Grade -1GA -187E -80E -25E -800 -25 -667 -3 -53E -37E -40E -5E Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system's memory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. PDF: 09005aef83b82bc1 htf16c128_256_512x64az – Rev. E 4/14 EN 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM IDD Specifications IDD Specifications Table 10: DDR2 IDD Specifications and Conditions – 1GB (Die Revision G) Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet -80E/ Parameter Symbol -800 -667 Units Operating one bank active-precharge current:tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (I ); CKE is HIGH, S# is HIGH between valid commands; Address bus DD inputs are switching; Data bus inputs are switching IDD01 576 536 mA Operating one bank active-read-precharge current: IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (IDD), tRCD = tRCD (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data pattern is same as IDD4W IDD11 656 616 mA Precharge power-down current: All device banks idle; tCK = tCK (IDD); CKE is LOW; Other control and address bus inputs are stable; Data bus inputs are floating IDD2P2 112 112 mA Precharge quiet standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data bus inputs are floating IDD2Q2 384 352 mA Precharge standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are switching; Data bus inputs are switching IDD2N2 448 400 mA Active power-down current: All device banks open; tCK = tCK (IDD); CKE is LOW; Other control and address bus inputs are stable; Data bus inputs are floating IDD3P2 288 240 mA 144 144 Fast PDN exit MR[12] = 0 Slow PDN exit MR[12] = 1 Active standby current: All device banks open; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid commands; Other control and address bus inputs are switching; Data bus inputs are switching IDD3N2 528 480 mA Operating burst write current: All device banks open; Continuous burst writes; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD4W1 1056 976 mA Operating burst read current: All device banks open; Continuous burst read, IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD4R1 1016 936 mA Burst refresh current:tCK = tCK (IDD); REFRESH command at every tRFC (IDD) interval; CKE is HIGH, S# is HIGH between valid commands; Other control and address bus inputs are switching; Data bus inputs are switching IDD51 816 776 mA Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and address bus inputs are floating; Data bus inputs are floating IDD62 112 112 mA PDF: 09005aef83b82bc1 htf16c128_256_512x64az – Rev. E 4/14 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM IDD Specifications Table 10: DDR2 IDD Specifications and Conditions – 1GB (Die Revision G) (Continued) Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet -80E/ Parameter Symbol -800 -667 Units Operating bank interleave read current: All device banks interleaving reads; IOUT = 0mA; BL = 4, CL = CL (IDD), AL = tRCD (IDD) - 1 × tCK (IDD); tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD (IDD), tRCD = tRCD (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are stable during deselects; Data bus inputs are switching Notes: IDD71 1256 1176 mA 1. Value calculated as one module rank in this operating condition; all other module ranks in IDD2P (CKE LOW) mode. 2. Value calculated reflects all module ranks in this operating condition. Table 11: DDR2 IDD Specifications and Conditions – 2GB (Die Revision H) Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet -80E/ Parameter Symbol -1GA -800 -667 Units Operating one bank active-precharge current:tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD01 656 576 536 mA Operating one bank active-read-precharge current: IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (IDD), tRCD = tRCD (I ); CKE is HIGH, S# is HIGH between valid commands; Address bus inDD puts are switching; Data pattern is same as IDD4W IDD11 736 656 616 mA Precharge power-down current: All device banks idle; tCK = tCK (IDD); CKE is LOW; Other control and address bus inputs are stable; Data bus inputs are floating IDD2P2 112 112 112 mA Precharge quiet standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data bus inputs are floating IDD2Q2 448 384 384 mA Precharge standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are switching; Data bus inputs are switching IDD2N2 544 448 384 mA Active power-down current: All device banks open; tCK = Fast PDN exit (IDD); CKE is LOW; Other control and address bus inputs are MR[12] = 0 stable; Data bus inputs are floating Slow PDN exit MR[12] = 1 IDD3P2 368 320 240 mA 160 160 160 Active standby current: All device banks open; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid commands; Other control and address bus inputs are switching; Data bus inputs are switching IDD3N2 640 528 480 tCK PDF: 09005aef83b82bc1 htf16c128_256_512x64az – Rev. E 4/14 EN 11 mA Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM IDD Specifications Table 11: DDR2 IDD Specifications and Conditions – 2GB (Die Revision H) (Continued) Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet -80E/ Parameter Symbol -1GA -800 -667 Units Operating burst write current: All device banks open; Continuous burst writes; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (I ); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs DD are switching; Data bus inputs are switching IDD4W1 1216 1056 976 mA Operating burst read current: All device banks open; Continuous burst read, IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (I ); CKE is HIGH, S# is HIGH between valid commands; Address bus DD inputs are switching; Data bus inputs are switching IDD4R1 1176 1016 936 mA Burst refresh current:tCK = tCK (IDD); REFRESH command at every tRFC (IDD) interval; CKE is HIGH, S# is HIGH between valid commands; Other control and address bus inputs are switching; Data bus inputs are switching IDD51 1296 1216 1176 mA Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and address bus inputs are floating; Data bus inputs are floating IDD62 112 112 112 mA Operating bank interleave read current: All device banks interleaving reads; IOUT = 0mA; BL = 4, CL = CL (IDD), AL = tRCD (IDD) - 1 × tCK (IDD); tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD (IDD), tRCD = tRCD (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are stable during deselects; Data bus inputs are switching IDD71 1816 1736 1536 mA Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks in IDD2P (CKE LOW) mode. 2. Value calculated reflects all module ranks in this operating condition. Table 12: DDR2 IDD Specifications and Conditions – 2GB (Die Revision M) Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet -80E/ Parameter Symbol -1GA -800 -667 Units Operating one bank active-precharge current:tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching IDD01 680 600 560 mA Operating one bank active-read-precharge current: IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (IDD), tRCD = tRCD (I ); CKE is HIGH, S# is HIGH between valid commands; Address bus inDD puts are switching; Data pattern is same as IDD4W IDD11 760 680 640 mA Precharge power-down current: All device banks idle; tCK = tCK (IDD); CKE is LOW; Other control and address bus inputs are stable; Data bus inputs are floating IDD2P2 160 160 160 mA Precharge quiet standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data bus inputs are floating IDD2Q2 448 384 384 mA PDF: 09005aef83b82bc1 htf16c128_256_512x64az – Rev. E 4/14 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM IDD Specifications Table 12: DDR2 IDD Specifications and Conditions – 2GB (Die Revision M) (Continued) Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet -80E/ Parameter Symbol -1GA -800 -667 Units Precharge standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are switching; Data bus inputs are switching IDD2N2 544 448 384 mA Active power-down current: All device banks open; tCK = Fast PDN exit (IDD); CKE is LOW; Other control and address bus inputs are MR[12] = 0 stable; Data bus inputs are floating Slow PDN exit MR[12] = 1 IDD3P2 512 480 448 mA 320 320 320 Active standby current: All device banks open; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid commands; Other control and address bus inputs are switching; Data bus inputs are switching IDD3N2 640 528 480 mA Operating burst write current: All device banks open; Continuous burst writes; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (I ); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs DD are switching; Data bus inputs are switching IDD4W1 1240 1080 1000 mA Operating burst read current: All device banks open; Continuous burst read, IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (I ); CKE is HIGH, S# is HIGH between valid commands; Address bus DD inputs are switching; Data bus inputs are switching IDD4R1 1200 1040 960 mA Burst refresh current:tCK = tCK (IDD); REFRESH command at every tRFC (IDD) interval; CKE is HIGH, S# is HIGH between valid commands; Other control and address bus inputs are switching; Data bus inputs are switching IDD51 1400 1320 1280 mA Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and address bus inputs are floating; Data bus inputs are floating IDD62 112 112 112 mA Operating bank interleave read current: All device banks interleaving reads; IOUT = 0mA; BL = 4, CL = CL (IDD), AL = tRCD (IDD) - 1 × tCK (IDD); tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD (IDD), tRCD = tRCD (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are stable during deselects; Data bus inputs are switching IDD71 1840 1760 1560 mA tCK Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks in IDD2P (CKE LOW) mode. 2. Value calculated reflects all module ranks in this operating condition. Table 13: DDR2 IDD Specifications and Conditions – 4GB (Die Revision C) Values shown for MT47H256M8 DDR2 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) component data sheet -80E/ Parameter Symbol -1GA -800 -667 Units Operating one bank active-precharge current:tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching; Data bus inputs are switching PDF: 09005aef83b82bc1 htf16c128_256_512x64az – Rev. E 4/14 EN 13 IDD01 776 696 656 mA Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM IDD Specifications Table 13: DDR2 IDD Specifications and Conditions – 4GB (Die Revision C) (Continued) Values shown for MT47H256M8 DDR2 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) component data sheet -80E/ Parameter Symbol -1GA -800 -667 Units Operating one bank active-read-precharge current: IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS MIN (IDD), tRCD = tRCD (I ); CKE is HIGH, S# is HIGH between valid commands; Address bus inDD puts are switching; Data pattern is same as IDD4W IDD11 856 784 736 mA Precharge power-down current: All device banks idle; tCK = tCK (IDD); CKE is LOW; Other control and address bus inputs are stable; Data bus inputs are floating IDD2P2 192 192 192 mA Precharge quiet standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data bus inputs are floating IDD2Q2 560 480 400 mA Precharge standby current: All device banks idle; tCK = tCK (IDD); CKE is HIGH, S# is HIGH; Other control and address bus inputs are switching; Data bus inputs are switching IDD2N2 640 560 480 mA Active power-down current: All device banks open; tCK = Fast PDN exit tCK (I ); CKE is LOW; Other control and address bus inputs are MR[12] = 0 DD stable; Data bus inputs are floating Slow PDN exit MR[12] = 1 IDD3P2 400 400 400 mA 224 224 224 Active standby current: All device banks open; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD); CKE is HIGH, S# is HIGH between valid commands; Other control and address bus inputs are switching; Data bus inputs are switching IDD3N2 960 800 720 mA Operating burst write current: All device banks open; Continuous burst writes; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (I ); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs DD are switching; Data bus inputs are switching IDD4W1 1376 1136 976 mA Operating burst read current: All device banks open; Continuous burst read, IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (I ); CKE is HIGH, S# is HIGH between valid commands; Address bus DD inputs are switching; Data bus inputs are switching IDD4R1 1376 1136 976 mA Burst refresh current:tCK = tCK (IDD); REFRESH command at every tRFC (IDD) interval; CKE is HIGH, S# is HIGH between valid commands; Other control and address bus inputs are switching; Data bus inputs are switching IDD51 1496 1456 1416 mA Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and address bus inputs are floating; Data bus inputs are floating IDD62 192 192 192 mA Operating bank interleave read current: All device banks interleaving reads; IOUT = 0mA; BL = 4, CL = CL (IDD), AL = tRCD (IDD) - 1 × tCK (IDD); tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD (IDD), tRCD = tRCD (IDD); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are stable during deselects; Data bus inputs are switching IDD71 1936 1856 1696 mA Notes: PDF: 09005aef83b82bc1 htf16c128_256_512x64az – Rev. E 4/14 EN 1. Value calculated as one module rank in this operating condition; all other module ranks in IDD2P (CKE LOW) mode. 2. Value calculated reflects all module ranks in this operating condition. 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM Serial Presence-Detect Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 14: SPD EEPROM Operating Conditions Parameter/Condition Symbol Min Max Units VDDSPD 1.7 3.6 V Input high voltage: logic 1; All inputs VIH VDDSPD × 0.7 VDDSPD + 0.5 V Input low voltage: logic 0; All inputs VIL –0.6 VDDSPD × 0.3 V Output low voltage: IOUT = 3mA Supply voltage VOL – 0.4 V Input leakage current: VIN = GND to VDD ILI 0.1 3 µA Output leakage current: VOUT = GND to VDD ILO 0.05 3 µA Standby current ISB 1.6 4 µA Power supply current, READ: SCL clock frequency = 100 kHz ICCR 0.4 1 mA Power supply current, WRITE: SCL clock frequency = 100 kHz ICCW 2 3 mA Table 15: SPD EEPROM AC Operating Conditions Parameter/Condition Symbol Min Max Units Notes SCL LOW to SDA data-out valid tAA 0.2 0.9 µs 1 Time bus must be free before a new transition can start tBUF 1.3 – µs Data-out hold time tDH 200 – ns SDA and SCL fall time tF – 300 ns 2 SDA and SCL rise time tR – 300 ns 2 Data-in hold time tHD:DAT 0 – µs Start condition hold time tHD:STA 0.6 – µs tHIGH 0.6 – µs tI – 50 ns tLOW 1.3 – µs tSCL – 400 kHz Data-in setup time tSU:DAT 100 – ns Start condition setup time tSU:STA 0.6 – µs Stop condition setup time tSU:STO 0.6 – µs tWRC – 10 ms Clock HIGH period Noise suppression time constant at SCL, SDA inputs Clock LOW period SCL clock frequency WRITE cycle time Notes: PDF: 09005aef83b82bc1 htf16c128_256_512x64az – Rev. E 4/14 EN 3 4 1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and the falling or rising edge of SDA. 2. This parameter is sampled. 3. For a restart condition or following a WRITE cycle. 4. The SPD EEPROM WRITE cycle time (tWRC) is the time from a valid stop condition of a write sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resistance, and the EEPROM does not respond to its slave address. 15 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM Module Dimensions Module Dimensions Figure 3: 240-Pin DDR2 UDIMM Front view 4.0 (0.157) MAX 133.5 (5.256) 133.2 (5.244) 2.0 (0.079) R (4X) U1 U2 U3 U4 U5 U6 U7 U8 30.5 (1.2) 29.85 (1.175) U10 17.78 (0.7) TYP 2.5 (0.098) D (2X) 2.3 (0.091) TYP 0.76 (0.03) R Pin 1 2.2 (0.087) TYP 1.0 (0.039) TYP 1.0 (0.039) TYP 10.0 (0.394) TYP 0.8 (0.031) TYP 1.37 (0.054) 1.17 (0.046) Pin 120 70.68 (2.78) TYP 123.0 (4.84) TYP Back view 45° (4X) U11 U12 U13 U14 U15 U16 U17 U18 3.05 (0.12) TYP Pin 240 Pin 121 5.0 (0.197) TYP 63.0 (2.48) TYP 55.0 (2.165) TYP Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. 2. The dimensional diagram is for reference only. Refer to the JEDEC MO document for additional design dimensions. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. PDF: 09005aef83b82bc1 htf16c128_256_512x64az – Rev. E 4/14 EN 16 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved.